KR20130027182A - Apparatus for bonding substrates - Google Patents

Apparatus for bonding substrates Download PDF

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Publication number
KR20130027182A
KR20130027182A KR1020110090605A KR20110090605A KR20130027182A KR 20130027182 A KR20130027182 A KR 20130027182A KR 1020110090605 A KR1020110090605 A KR 1020110090605A KR 20110090605 A KR20110090605 A KR 20110090605A KR 20130027182 A KR20130027182 A KR 20130027182A
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KR
South Korea
Prior art keywords
substrate
contact
thin film
flexible thin
film layer
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Application number
KR1020110090605A
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Korean (ko)
Inventor
김동현
우광제
한유신
서중원
이보현
김민주
장봉희
박승용
유율리아
김동운
김미경
Original Assignee
삼성코닝정밀소재 주식회사
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Priority to KR1020110090605A priority Critical patent/KR20130027182A/en
Publication of KR20130027182A publication Critical patent/KR20130027182A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The present invention relates to a substrate bonding apparatus. More particularly, the present invention relates to a substrate bonding apparatus that can improve the direct bonding efficiency by transmitting a uniform load to two substrates, and also suppress the generation of non-bonded surfaces between the two substrates during direct bonding. It is about.
To this end, the present invention includes a support part which is seated on one surface of the first substrate and the second substrate to be directly bonded to the first substrate, and deformable to be in surface contact with the first substrate; And a pressing part disposed to face the support part and reciprocating toward the support part to apply a bonding load to the first substrate and the second substrate, and being deformable to be in surface contact with the second substrate. A substrate bonding apparatus is provided.

Description

Board bonding apparatus {APPARATUS FOR BONDING SUBSTRATES}

The present invention relates to a substrate bonding apparatus. More particularly, the present invention relates to a substrate bonding apparatus that can improve the direct bonding efficiency by transmitting a uniform load to two substrates, and can suppress the occurrence of non-bonding surfaces between the two substrates during direct bonding. It is about.

In general, a method of bonding a compound semiconductor substrate on a silicon substrate is a molecular beam epitaxy (MBE) method. However, the molecular beam epitaxy method requires a high vacuum, the growth rate of the epi layer is very slow, the productivity is low, and the process cost is very expensive. In addition, the molecular beam epitaxy method has a problem in that many defects such as dislocations are generated in the epilayer. As a result, when manufacturing an electric device or an optical device using the epitaxial layer grown by the molecular beam epitaxy, a fatal problem such as deterioration of intrinsic characteristics of each device occurs.

In order to solve such a problem, the direct bonding method which directly bonds a heterogeneous substrate was proposed. Direct bonding between dissimilar substrates is achieved through the control of the bonding pressure and ambient temperature between the two substrates, typically using a direct bonder consisting of a pressing portion and a supporting portion. For example, a silicon substrate and a GaN substrate to be bonded thereto are mounted on the support. In this state, the pressing part applies a constant load in the direction of the supporting part so that the two substrates make contact with each other and then the bonding is made.

Here, in the conventional direct splicer, the seating surface of the supporting portion and the pressing surface of the pressing portion facing the same form a flat surface having an infinite radius of curvature. However, the two substrates to be mounted and bonded thereto have a constant radius of curvature. That is, the warp is formed in the two substrates, due to this, there is a structural limitation that the two substrates and the pressing portion and the support portion do not make a complete contact but only form a local contact. Therefore, the load applied from the pressing portion is not evenly transmitted over the two substrates, there is a problem that a non-bonding surface and voids are formed between the two substrates after bonding, which leads to product defects.

The present invention has been made to solve the problems of the prior art as described above, the object of the present invention is to improve the direct bonding efficiency by transferring a uniform load to the two substrates, as well as non-bonding surface between the two substrates during direct bonding It is to provide a substrate bonding apparatus capable of suppressing the occurrence of.

To this end, the present invention is a support substrate which is formed on the first substrate and the second substrate to be directly bonded to the first substrate in turn, and deformable to be in surface contact with the first substrate; And a pressing part disposed to face the support part and reciprocating toward the support part to apply a bonding load to the first substrate and the second substrate, and being deformable to be in surface contact with the second substrate. A substrate bonding apparatus is provided.

The support part may include a support body having a first recessed portion formed on a seating surface on which the first substrate is seated, a first fluidized layer accommodated in the first recessed portion, and the first recessed portion, and one surface and the other surface thereof. Each of the substrate may include a first flexible thin film layer in contact with the first substrate and the first fluidized layer.

In this case, the first fluidized bed may be made of fine particles.

In addition, the first recess may be formed to have at least the same width as the first substrate.

The first flexible thin film layer may be modified to have the same radius of curvature as the first substrate.

In addition, the pressurizing portion may include a pressurizing portion body having a second recessed portion formed on a contact surface in contact with the second substrate, a second fluidized layer accommodated in the second recessed portion, and the second recessed portion, and one surface and the other surface thereof may be closed. Each of the second substrate may include a second flexible thin film layer in contact with the second fluid layer.

In this case, the second fluidized bed may be made of fine particles.

The second recess may be formed to have at least the same width as the second substrate.

In addition, the second flexible thin film layer may be modified to have the same radius of curvature as the second substrate.

In addition, one of the first substrate and the second substrate may be a silicon substrate, and the other may be a freestanding GaN substrate.

According to the present invention, the surface of the support portion and the pressing portion in direct bonding to the two substrates is deformed according to the warpage of the two substrates, so that the two substrates can be brought into full contact, thereby suppressing the occurrence of the non-bonding surface after the bonding. Can be.

In addition, according to the present invention, direct bonding efficiency can be improved by transmitting a uniform load to the two substrates.

1 is a cross-sectional view schematically showing a substrate bonding apparatus according to an embodiment of the present invention.
2 and 3 is an embodiment showing a substrate bonding process of the substrate bonding apparatus according to an embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings will be described in detail a substrate bonding apparatus according to an embodiment of the present invention.

In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

As shown in FIG. 1, the substrate bonding apparatus 100 according to an exemplary embodiment of the present invention directly bonds a heterogeneous substrate, for example, a silicon substrate 10 and a freestanding GaN substrate 20 through pressure and temperature control. Device. At this time, the bonding surface of the two substrates 10 and 20 to be bonded has a curved surface with a curvature rather than a flat surface. That is, the substrate bonding apparatus 100 according to the embodiment of the present invention is a device capable of completely bonding the two substrates 10 and 20 having the curved surfaces in this way without generating a non-bonding surface. It is formed to include 120.

The support 110 is a device for seating the silicon substrate 10 and the self-supporting GaN substrate 20 to be bonded and for supporting these two substrates 10 and 20 from this load when a load is applied from the pressing unit 120. At this time, the silicon substrate 10 and the self-standing GaN substrate 20 are sequentially mounted on one surface of the support 110, and the mounting order may be reversed. In addition, the support 110 may be deformable when a load is applied from the pressing unit 120 to make surface contact with the curved silicon substrate 10.

To this end, the support 110 may be formed to include a support body 111, a fluidized layer 112 and a flexible thin film layer 113.

Here, the support body 111 is a device for forming the appearance of the support 110, it may be formed in a substantially hexahedral shape. That is, the silicon substrate 10 and the self-supporting GaN substrate 20 are seated in such a manner that they are sequentially stacked on the upper surface (drawing reference) of the support body 111. At this time, a recess 111a of a predetermined size is formed in a portion of the upper surface of the support body 111 on which the silicon substrate 10 is seated. The recess 111a is a groove providing an accommodation space of the fluidized layer 112 and may be formed to have the same or wider width than the silicon substrate 10.

The fluidized bed 112 is accommodated in the recess 111a. The fluidized bed 112 may be made of fine particles having a microscale such as sand. That is, the fine particles are filled in the recess 111a to form the fluidized bed 112.

When a load is applied to the fluidized layer 112, the fine particles move to a position that receives the minimum load in the recess 111a, whereby the shape of the fluidized layer 112 is changed, and the changed shape is a silicon substrate. It depends on the shape of (10). And, through this, the silicon substrate 10 and the freestanding GaN substrate 20 is in complete surface contact, which will be described in more detail below.

The flexible thin film layer 113 serves to prevent the separation of the fluidized layer 112 accommodated in the recess 111a by closing the recess 111a of which the upper side is open, and protecting it. In this case, the upper and lower surfaces of the flexible thin film layer 113 maintain surface contact with the lower surface of the silicon substrate 10 and the upper surface of the fluidized layer 112, respectively. In addition, the shape of the flexible thin film layer 113 is changed according to the load transmitted through the silicon substrate 10. In this case, the flexible thin film layer 113 is deformed to have the same radius of curvature as the radius of curvature of the silicon substrate 10.

The pressing unit 120 is a device for applying a load to the silicon substrate 10 and the self-standing GaN substrate 20 stacked on the support 110 for direct bonding. To this end, the pressing unit 120 is disposed to face the support 110, more specifically, is disposed on the freestanding GaN substrate 20 stacked on the support 110. In addition, the pressing unit 120 is formed by applying a load to the two substrates 10 and 20 physically. Accordingly, the pressing unit 120 may be formed to reciprocate up and down by using electric power, hydraulic pressure, and the like. That is, the load is applied to the two substrates 10 and 20 during the downward movement of the pressing unit 120, and conversely, the load applied to the two substrates 10 and 20 during the upward movement is released. In addition, the pressing unit 120, like the supporting unit 110, may be in contact with the freestanding GaN substrate 20 during the lowering process to make surface contact with the freestanding GaN substrate 20 having a curved surface according to the shape of the GaN substrate 20. It is formed to be deformable.

To this end, the pressing unit 120 may include a pressing unit body 121, a fluidized layer 122 and the flexible thin film layer 123.

Here, the pressing unit body 121 is a device for forming the appearance of the pressing unit 120, may be formed in a shape corresponding to the shape of the two substrates (10, 20), it may be formed in a substantially cylindrical shape. . In this case, the width of the pressing unit body 121 may be formed so as to correspond to the freestanding GaN substrate 20, and the support body 111 may have a height contrast to support the silicon substrate 10 and the freestanding GaN substrate 20. Whereas the ratio of the width is formed to 1 or more, the pressing unit body 121 may be formed with a ratio of the width to height to less than 1, preferably less than 0.5 for the concentration of the load. A recess 121a having a predetermined size is formed in a portion of the pressing unit body 121 that comes into contact with the self-standing GaN substrate 20 in the lower surface (drawing reference). Like the recess 111a of the support body 111, the recess 121a of the pressing body 121 is a groove providing an accommodation space of the fluidized layer 122, and is the same as or wider than the freestanding GaN substrate 20. It can be formed as.

The fluidized bed 122 is accommodated in the recess 121a. The fluidized bed 122 may be made of fine particles having a micro scale such as sand. That is, the fine particles are filled in the recess 121a to form the fluidized bed 122.

When a load is applied to the fluidized bed 122, the fine particles are moved to a position where the load is minimally received in the recess 121a, whereby the shape of the fluidized bed 122 is changed, and the changed shape is a freestanding GaN. It depends on the shape of the substrate 20. And, through this, the silicon substrate 10 and the freestanding GaN substrate 20 is in complete surface contact, which will be described in more detail below.

The flexible thin film layer 123 closes the recessed portion 121a having the lower side open and serves to prevent the separation of the fluidized layer 122 accommodated in the recessed portion 121a and to protect it. The flexible thin film layer 123 may be formed of the same material and thickness as the flexible thin film layer 113 formed on the support 110. In this case, the upper surface of the flexible thin film layer 123 maintains a surface contact with the lower surface of the fluidized layer 122. The lower surface of the flexible thin film layer 123 makes surface contact with the upper surface of the self-standing GaN substrate 20 when the pressing unit 120 descends. In addition, the shape of the flexible thin film layer 123 is changed according to the load transmitted through the freestanding GaN substrate 20. The flexible thin film layer 123 is deformed to have the same curvature radius as that of the freestanding GaN substrate 20.

Hereinafter, the operation of the substrate bonding apparatus according to the embodiment of the present invention will be described.

First, as shown in FIG. 2, the silicon substrate 10 and the self-supporting GaN substrate 20 are stacked on the upper surface of the support part 110, that is, the bonding load is not applied to the two substrates 10 and 20. The silicon substrate 10 and the freestanding GaN substrate 20 are in point contact or partial contact with each other when the pressing unit 120 is disposed to face the upper side of the freestanding GaN substrate 20. 10) and only the partial contact between the support 110 is made. In this case, the flexible thin film layer 113 of the support 110 is bent downward by a size proportional thereto by the weight of the silicon substrate 10 and the self-standing GaN substrate 20, and thus, the flexible thin film layer ( 113) The load is also transmitted to the fluidized layer 112 which is in contact with the lower side, so that the shape of the fluidized layer 112 may be changed according to the deformation of the flexible thin film layer 113. However, the strength of the flexible thin film layer 113 may be controlled to withstand the load of the silicon substrate 10 and the freestanding GaN substrate 20. In this case, deformation of the flexible thin film layer 113 and the fluidized layer 112 does not occur until the pressurization is performed by the pressing unit 120.

Meanwhile, the shape deformation of the fluidized layer 122 and the flexible thin film layer 123 of the pressing unit 120 does not occur until the pressing unit 120 is in contact with the self-standing GaN substrate 20.

Next, as shown in FIG. 3, in order to directly bond the silicon substrate 10 and the self-standing GaN substrate 20, the pressing unit 120 is lowered so that the pressing unit 120 and the freestanding GaN substrate 20 are formed. When contacted, the load is sequentially transmitted to the flexible thin film layer 123 and the fluidized layer 122 of the pressing unit 120 to change its shape into a curved shape of the self-standing GaN substrate 20, which is the fluidized layer 122. It is generated by the elastic deformation of the flexible thin film layer 123 and the movement according to the load of the constituent particles. As a result, the pressing unit 120 and the freestanding GaN substrate 20 are in perfect surface contact.

In addition, the contact surface between the self-supporting GaN substrate 20 and the silicon substrate 10 is also in contact with each other without a non-contact surface by the pressing of the pressing unit 120, and the flexible thin film layer 113 of the support unit 110 The load is also transmitted to the fluidized layer 112 in order to change its shape into the curved surface of the silicon substrate 10. In this case, the flexible thin film layer 113 and the fluidized layer 112 of the support 110 may also be applied to the load of the particles constituting the fluidized layer 112, similarly to the flexible thin film layer 123 and the fluidized layer 122 of the pressing unit 120. According to the movement and elastic deformation of the flexible thin film layer 113, the shape change is induced, and as a result, the silicon substrate 10 and the support 110 are in complete surface contact.

That is, as described above, when the direct bonding is performed in a state where the support 110, the silicon substrate 10, the self-standing GaN substrate 20, and the pressing unit 120 are all in surface contact, the two substrates 10 and 20 may be formed. A uniform load is transmitted to the joining surface, whereby a high-quality direct bonded substrate in which non-bonding surface generation is suppressed can be obtained.

While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. This is possible.

Therefore, the scope of the present invention should not be limited by the described embodiments, but should be determined by the scope of the appended claims as well as the appended claims.

100: substrate bonding apparatus 110: support portion
111: support body 111a, 121a: main part
112, 122 fluidized bed 113, 123: flexible thin film layer
10: silicon substrate 20: freestanding GaN substrate

Claims (10)

A support part on one surface of which a first substrate and a second substrate to be directly bonded to the first substrate are sequentially seated and deformably formed to be in surface contact with the first substrate; And
A pressing part disposed to face the support part, the pressing part reciprocating toward the support part to apply a bonding load to the first substrate and the second substrate, and deformable to be in surface contact with the second substrate;
Substrate bonding apparatus comprising a.
The method of claim 1,
The support portion
A support body having a first recessed portion formed on a seating surface on which the first substrate is seated;
A first fluidized bed accommodated in said first recessed portion, and
And a first flexible thin film layer closing the first recess and having one surface and the other surface in contact with the first substrate and the first fluid layer, respectively.
The method of claim 2,
And said first fluidized layer is made of fine particles.
The method of claim 2,
And said first recessed portion is formed at least as wide as the first substrate.
The method of claim 2,
And the first flexible thin film layer is deformed to have the same radius of curvature as the first substrate.
The method according to any one of claims 1 to 5,
The pressing portion
A pressing part body having a second recessed portion formed on a contact surface in contact with the second substrate;
A second fluidized bed accommodated in said second recessed portion, and
And a second flexible thin film layer closing the second recess and having one surface and the other surface in contact with the second substrate and the second fluid layer, respectively.
The method according to claim 6,
And the second fluidized layer is made of fine particles.
The method according to claim 6,
And said second recess is formed at least the same width as said second substrate.
The method according to claim 6,
And the second flexible thin film layer is deformed to have the same radius of curvature as the second substrate.
The method of claim 1,
Wherein one of the first substrate and the second substrate is a silicon substrate, and the other is a freestanding GaN substrate.
KR1020110090605A 2011-09-07 2011-09-07 Apparatus for bonding substrates KR20130027182A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018159907A1 (en) * 2017-02-28 2018-09-07 주성엔지니어링(주) Bonding apparatus and laminator comprising same
WO2022004909A1 (en) * 2020-06-30 2022-01-06 재단법인 파동에너지 극한제어연구단 Meta structure having zero elastic modulus section and method for designing meta structure having zero elastic modulus section

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018159907A1 (en) * 2017-02-28 2018-09-07 주성엔지니어링(주) Bonding apparatus and laminator comprising same
WO2022004909A1 (en) * 2020-06-30 2022-01-06 재단법인 파동에너지 극한제어연구단 Meta structure having zero elastic modulus section and method for designing meta structure having zero elastic modulus section

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