KR20130024476A - Method for manufacturing semiconductor substrate - Google Patents

Method for manufacturing semiconductor substrate Download PDF

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Publication number
KR20130024476A
KR20130024476A KR1020110087948A KR20110087948A KR20130024476A KR 20130024476 A KR20130024476 A KR 20130024476A KR 1020110087948 A KR1020110087948 A KR 1020110087948A KR 20110087948 A KR20110087948 A KR 20110087948A KR 20130024476 A KR20130024476 A KR 20130024476A
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South Korea
Prior art keywords
substrate
gallium nitride
gan
separated
etching
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KR1020110087948A
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Korean (ko)
Inventor
김경준
진창욱
이주현
어성우
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삼성코닝정밀소재 주식회사
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Priority to KR1020110087948A priority Critical patent/KR20130024476A/en
Publication of KR20130024476A publication Critical patent/KR20130024476A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: A method for manufacturing a semiconductor substrate is provided to improve the crystallization of the semiconductor substrate. CONSTITUTION: A second gallium nitride substrate is grown on a first gallium nitride substrate(S301). The first gallium nitride substrate is separated from the second gallium nitride substrate(S302). The stress concentration layer of the second gallium nitride substrate is etched to a predetermined depth(S303). The surface of the second gallium nitride substrate is processed(S304). [Reference numerals] (AA) Start; (BB) End; (S301) Growing a second gallium nitride(GaN) substrate on a first gallium nitride(GaN) substrate; (S302) Separating the first gallium nitride(GaN) substrate and the second gallium nitride(GaN) substrate; (S303) Etching a stress concentration layer of the separated second gallium nitride(GaN) substrate from the surface to a determined depth(d); (S304) Processing the etched second gallium nitride(GaN) substrate

Description

Semiconductor substrate manufacturing method {METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE}

The present invention grows and isolates high-quality semiconductor substrates that can be used for light emitting devices such as light emitting diodes (LEDs) and laser diodes (LDs), light receiving devices such as solar cells, optical sensors, or electronic devices such as transistors and power devices. It is about technology to do.

Current methods for growing semiconductor substrates on sapphire substrates include organometallic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), and halide vapor phase epitaxy (HVPE). Dual halide vapor phase epitaxy (HVPE) is widely used because of its advantages in growing thick films or bulk single crystals, which are several orders of magnitude faster than the other two methods.

1 is an exemplary diagram for explaining a process of growing and separating a gallium nitride (GaN) substrate on a conventional sapphire substrate.

As shown, the sapphire substrate 11 is mounted in the reactor. Before growing a gallium nitride (GaN) substrate, a gas mixture of ammonia gas (NH 3) and hydrogen chloride (HCl) is flowed on the sapphire substrate 11 for surface treatment. Subsequently, gallium chloride (GaN) substrate 21 is grown by injecting gallium chloride (GaCl) and ammonia gas (NH 3) together with a carrier gas into the sapphire substrate 11 while maintaining the temperature inside the reactor at a high temperature of 100 ° C. or higher. Let's do it. Thereafter, the sapphire substrate 11 on which the gallium nitride (GaN) substrate 21 is grown is cooled for about 8 hours. Thereafter, the sapphire substrate 11 on which the cooled gallium nitride (GaN) substrate 21 is grown is phosphate-etched. Thereafter, the sapphire substrate 11 on which the gallium nitride (GaN) substrate 21 is grown is transferred to a laser separation furnace, and the gallium nitride is irradiated on the sapphire substrate 11 on which the gallium nitride (GaN) substrate 21 is grown. (GaN) substrate 21 is separated.

However, according to the conventional method, the gallium nitride (GaN) substrate 21 separated from the sapphire substrate 11 has a warpage. Such warpage has a problem of causing cracks when gallium nitride (GaN) is regrown on the gallium nitride (GaN) substrate 21 separated from the sapphire substrate 11. The biggest cause of warping in the gallium nitride (GaN) substrate 21 is the lattice constant and coefficient of thermal expansion between the sapphire substrate and the gallium nitride (GaN) substrate while cooling the gallium nitride (GaN) substrate after high temperature growth on the sapphire substrate. This is because a stress is generated in the sapphire substrate 11 and the gallium nitride (GaN) substrate due to the difference between the two layers.

2 is an exemplary view for explaining a process of regrowth and separation of a conventional gallium nitride (GaN) substrate.

As shown, the gallium nitride (GaN) substrate 22 is grown again on the gallium nitride (GaN) substrate 21 separated from the sapphire substrate. Then, the regrown gallium nitride (GaN) 22 substrate is separated, and the Ga and N surfaces are sequentially processed to make a finished product.

However, since the gallium nitride (GaN) substrate 21 separated from the sapphire substrate has warpage, the regrown gallium nitride (GaN) 22 substrate has more warpage. Therefore, when the Ga surface and the N surface of the gallium nitride (GaN) 22 substrate is processed, there is a problem that the amount of processing increases.

The present invention has been proposed in the above background, and an object of the present invention is to provide a method for manufacturing a semiconductor substrate that can reduce the amount of processing when manufacturing a semiconductor substrate finished product.

Another object of the present invention is to provide a method for manufacturing a semiconductor substrate that can improve the crystallinity of the semiconductor substrate when manufacturing the semiconductor substrate finished product.

In order to achieve the above object, a semiconductor substrate manufacturing method according to an aspect of the present invention, the step of growing a second gallium nitride (GaN) substrate on the first gallium nitride (GaN) substrate, and the first gallium nitride ( Separating the GaN) substrate from the second gallium nitride (GaN) substrate, etching the stress concentration layer of the separated second gallium nitride (GaN) substrate to a predetermined depth d from the surface, and etching the second Processing the surface of the gallium nitride (GaN) substrate.

In the semiconductor substrate manufacturing method according to an additional aspect of the present invention, the step of etching the stress concentration layer of the separated second gallium nitride (GaN) substrate from the surface to a predetermined depth (d), filling the electrolyte solution in the wet bath And raising the internal temperature of the wet bath, submerging the second gallium nitride (GaN) substrate connected to the anode and the anode connected to the wet tank, and the second gallium nitride to which the anode is connected to the substrate. Applying a current to the (GaN) substrate.

In the semiconductor substrate manufacturing method according to an additional aspect of the present invention, the step of etching the stress concentration layer of the separated second gallium nitride (GaN) substrate from the surface to a predetermined depth (d), filling the etching solution in the wet bath And raising the internal temperature of the wet bath, and submerging the second gallium nitride (GaN) substrate separated in the wet bath.

In a method of manufacturing a semiconductor substrate according to an additional aspect of the present invention, the step of etching the stress-concentrating layer of the separated second gallium nitride (GaN) substrate from a surface to a predetermined depth d may include separating the second gallium nitride (GaN). ) Mounting the substrate in the reactor, raising the internal temperature of the reactor, and introducing an etching gas into the reactor.

According to the above configuration, the semiconductor substrate manufacturing method of the present invention comprises the steps of etching the stress concentration layer of the separated second gallium nitride (GaN) substrate from the surface to a predetermined depth (d), and the second gallium nitride (etched) By processing the surface of the GaN) substrate, there is a useful effect that can reduce the amount of processing and improve the crystallinity of the semiconductor substrate during the manufacture of the finished semiconductor substrate.

1 is an exemplary diagram for explaining a process of growing and separating a gallium nitride (GaN) substrate on a conventional sapphire substrate.
2 is an exemplary view for explaining a process of regrowth and separation of a conventional gallium nitride (GaN) substrate.
3 is a flowchart illustrating a method of manufacturing a semiconductor substrate according to the present invention.
4 is a result of measuring the substrate warpage change rate before and after etching according to the semiconductor substrate manufacturing method of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the present embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout.

3 is a flowchart illustrating a method of manufacturing a semiconductor substrate according to the present invention.

As shown in the drawing, the semiconductor substrate manufacturing method according to the present invention first grows a second gallium nitride (GaN) substrate on a first gallium nitride (GaN) substrate (S301). For example, after the first gallium nitride (GaN) substrate is mounted in the reactor, the gallium chloride (GaCl) and ammonia together with the carrier gas are added to the first gallium nitride (GaN) substrate while the reactor internal temperature is maintained at a high temperature of 100 ° C. or higher. Gas (NH 3) is injected to grow a second gallium nitride (GaN) substrate.

Thereafter, the first gallium nitride (GaN) substrate and the second gallium nitride (GaN) substrate are separated (S302). A stress concentration layer is formed at the interface between the first gallium nitride (GaN) substrate and the second gallium nitride (GaN) substrate. Such a stress concentration layer causes a warpage of the second gallium nitride (GaN) substrate.

Thereafter, the stress concentration layer of the separated second gallium nitride (GaN) substrate is etched from the surface to a predetermined depth d (S301). In one embodiment, step S301 is a step of filling the wet bath with an electrolyte solution (eg, KOH, H 3 PO 4 , H 2 SO 4 , NaOH), the step of raising the internal temperature of the wet bath to about 90 ℃, Submerging the substrate to which the cathode is connected to the wet tank and the second gallium nitride (GaN) substrate to which the anode is connected, and applying a current to the substrate to which the cathode is connected to the second gallium nitride (GaN) substrate to which the anode is connected. have. Here, the internal temperature of the wet tank can be etched even if it is maintained at room temperature, and the substrate to which the cathode is connected may be a substrate made of platinum.

In another embodiment, in step S301, the stress concentration layer of the separated second gallium nitride (GaN) substrate is etched from the surface to a predetermined depth (d) by using an etching solution (eg, KOH, H 3 PO 4 , H) in a wet bath. 2 SO 4 , NaOH), increasing the internal temperature of the wet bath to about 200 ° C. or more, and immersing the second gallium nitride (GaN) substrate separated in the wet bath.

In another embodiment, the step S301 of etching the stress concentration layer of the separated second gallium nitride (GaN) substrate from the surface to a predetermined depth d may include mounting the separated second gallium nitride (GaN) substrate in the reactor. And increasing the internal temperature of the reactor to about 900 ° C. or more, and introducing an etching gas (eg, Cl gas) into the reactor.

Thereafter, a second gallium nitride (GaN) substrate is processed (S302). As a method of processing the second gallium nitride (GaN) substrate, grinding, lapping, polishing, or the like may be performed.

4 is a result of measuring the substrate warpage change rate before and after etching according to the semiconductor substrate manufacturing method of the present invention.

As illustrated, the stress concentration layer of the second gallium nitride (GaN) substrate separated from the first gallium nitride (GaN) substrate is etched from the surface to a predetermined depth d, and then the second gallium nitride (GaN) substrate is bent. As a result of measuring the rate of change, it can be seen that the warping of the second gallium nitride (GaN) substrate is reduced when the predetermined depth d is 20 µm or more.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the scope of the invention as defined by the appended claims. Accordingly, the true scope of the present invention should be determined only by the appended claims.

Claims (5)

Growing a second gallium nitride (GaN) substrate on the first gallium nitride (GaN) substrate;
Separating the first gallium nitride (GaN) substrate and the second gallium nitride (GaN) substrate;
Etching the stress concentration layer of the separated second gallium nitride (GaN) substrate from a surface to a predetermined depth d; And
Processing a surface of the etched second gallium nitride (GaN) substrate;
A semiconductor substrate manufacturing method comprising a. According to claim 1, In the step of etching the stress concentration layer of the separated gallium nitride (GaN) substrate from a surface to a predetermined depth (d),
The predetermined depth (d) is a semiconductor substrate manufacturing method, characterized in that 20㎛ or more. The method of claim 1, wherein etching the stress concentration layer of the separated second gallium nitride (GaN) substrate from a surface to a predetermined depth d comprises:
Filling the wet bath with the electrolyte solution;
Raising the internal temperature of the wet tank;
Submerging the second gallium nitride (GaN) substrate having a cathode connected to the wet tank and the anode connected thereto; And
Applying a current to the substrate to which the cathode is connected and the second gallium nitride (GaN) substrate to which the anode is connected;
A semiconductor substrate manufacturing method comprising a. The method of claim 1, wherein etching the stress concentration layer of the separated second gallium nitride (GaN) substrate from a surface to a predetermined depth d comprises:
Filling an etchant into a wet bath;
Raising the internal temperature of the wet tank; And
Submerging the second gallium nitride (GaN) substrate in the wet bath;
A semiconductor substrate manufacturing method comprising a. The method of claim 1, wherein the step of etching the stress concentration layer of the separated gallium nitride (GaN) substrate from the surface to a predetermined depth (d):
Mounting the second gallium nitride (GaN) substrate in a reactor;
Raising the internal temperature of the reactor; And
Introducing an etching gas into the reactor;
A semiconductor substrate manufacturing method comprising a.
KR1020110087948A 2011-08-31 2011-08-31 Method for manufacturing semiconductor substrate KR20130024476A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106415795A (en) * 2013-12-04 2017-02-15 西尔特克特拉有限责任公司 Method for producing large-area solid-body layers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106415795A (en) * 2013-12-04 2017-02-15 西尔特克特拉有限责任公司 Method for producing large-area solid-body layers
CN106415795B (en) * 2013-12-04 2020-07-14 西尔特克特拉有限责任公司 Method for producing a large-area solid layer

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