KR20130022676A - Lithography equipment with inducing uniform heating on reticle and wafer exposure method by using the same - Google Patents

Lithography equipment with inducing uniform heating on reticle and wafer exposure method by using the same Download PDF

Info

Publication number
KR20130022676A
KR20130022676A KR1020110085450A KR20110085450A KR20130022676A KR 20130022676 A KR20130022676 A KR 20130022676A KR 1020110085450 A KR1020110085450 A KR 1020110085450A KR 20110085450 A KR20110085450 A KR 20110085450A KR 20130022676 A KR20130022676 A KR 20130022676A
Authority
KR
South Korea
Prior art keywords
reticle
exposure
wafer
blade
region
Prior art date
Application number
KR1020110085450A
Other languages
Korean (ko)
Inventor
양현조
Original Assignee
에스케이하이닉스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에스케이하이닉스 주식회사 filed Critical 에스케이하이닉스 주식회사
Priority to KR1020110085450A priority Critical patent/KR20130022676A/en
Publication of KR20130022676A publication Critical patent/KR20130022676A/en

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers

Abstract

A light source providing exposure light, a stage on which the wafer is mounted; A lens portion which is introduced on the wafer to project the exposure light, a reticle introduced on the lens portion, and is introduced on the reticle to restrict and expose a field region of the reticle to which the exposure light is incident An exposure apparatus including a blade and an auxiliary heating unit for heating a frame region of a reticle covered by the blade and a wafer exposure method using the same are provided.

Description

Lithography equipment with inducing uniform heating on reticle and wafer exposure method by using the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor lithography technology, and more particularly, to lithography equipment capable of inducing uniform heating on a reticle and a wafer exposure method using the same.

In order to integrate a semiconductor device on a wafer, an exposure apparatus for pattern-transferring an image of a circuit pattern onto a wafer is used for manufacturing a semiconductor device. The exposure apparatus includes a reduction projection lens portion for transferring an image of a circuit pattern formed on a reticle onto a wafer.

1 shows a reticle and a blade of a typical exposure apparatus.

Referring to FIG. 1, in order to scan local regions of circuit patterns 13 formed on the transparent substrate 11 of the reticle 10, a blade 20 is introduced on the reticle 10 so that the reticle ( The exposure light 30 to be incident on 10 is limited to the local area. The blade 20 has a slit which opens a partial region of a field region 17 in which the circuit patterns 13 of the reticle 10 are provided as a mask pattern, and the slit by scanning The exposure is performed in such a manner that the area opened by the movement is moved, that is, the scanner method. In this case, since the frame region 19 outside the frame patterns 15 outside the circuit patterns 13 is covered by the blade 20, the frame region 19 may be formed of the exposure light 30. It becomes an area | region which incidence is cut off.

When the wafer is mounted on the exposure apparatus and the exposure process is performed, the exposure light 30 limited by the blade 20 is incident on the reticle 10, and as the number of wafers on which the exposure process is performed increases, the incident light is repeatedly input. The temperature of the reticle 10 is increased by the exposure light 30. That is, the exposure light 30 incident on the reticle 10 during the wafer exposure heats the reticle 10 locally, and as the number of wafer exposures increases, the temperature of the reticle 10 increases. This increase in temperature of the reticle 10 entails thermal expansion of the reticle 10, which may result in an overlay error in which the positions of the patterns transferred onto the wafer change. Although reticle alignment correction is performed prior to wafer exposure to correct this overlay error, expansion of the reticle 10 due to heating differs greatly from region to region due to local heating. Nevertheless, overlay errors are not effectively compensated, which contributes to yield decline.

As shown in FIG. 1, the exposure light 30 is not incident to the entire area of the reticle 10 during the exposure process, but is limited to the area of the reticle 10 exposed to the slit of the blade 20. The exposure process takes place. Accordingly, the field region 17 of the reticle 10 is relatively uniformly heated since the exposure light 30 is scanned, so that the degree of temperature increase is constantly evaluated, but the frame region 19 around the field region 17 Since the incidence of the exposure light 30 is blocked by the blade 20, the heating action by the exposure light 30 is not substantially performed, so that a temperature lower than that of the field region 17 is maintained.

The result of measuring the temperature distribution of the reticle 10 after exposing 25 wafers on a wafer basis can be obtained with a temperature distribution map as shown in FIG. 2. The center portion 16 corresponding to the field region 17 is measured at a relatively high temperature, whereas the edge portion 18 corresponding to the frame region 19 is measured at a significantly lower temperature than the center portion 16. It is becoming. As described above, since the temperature deviation in the middle portion 16 and the edge portion 18 is large, it is obvious that the degree of thermal expansion due to the temperature variation is largely induced in the middle portion 16 and the edge portion 18. This difference in local thermal patch degree causes the overlay error to be greatly induced for each region despite the overlay alignment correction of the reticle 10.

The present invention can reduce the temperature variation for each region of the reticle caused by the local heating of the reticle by the scan exposure light using the blade in the exposure process, and the overlay error in the exposure process due to the thermal expansion variation for each region due to the local heating. The present invention provides an exposure apparatus and a wafer exposure method capable of compensating for reducing the occurrence of the above.

One aspect of the invention, the light source for providing exposure light; A stage on which the wafer is mounted; A lens unit introduced on the wafer to project the exposure light; A reticle introduced on the lens portion; A blade introduced on the reticle to limit and expose a field region of the reticle to which the exposure light is incident; And an auxiliary heating unit for heating a frame region of the reticle covered by the blade.

The auxiliary heating unit may be an infrared lamp attached to the blade to irradiate infrared rays to the frame region of the reticle.

The auxiliary heating unit may include a heating holder which holds the reticle and heats the frame area of the reticle.

Another aspect of the invention, the light source for providing exposure light; A stage on which the wafer is mounted; A lens unit introduced on the wafer to project the exposure light; A reticle introduced on the lens portion; Scanning the wafer using exposure equipment including a blade introduced on the reticle to limit and expose a field region of the reticle to which the exposure light is incident; And heating a frame region of the reticle covered by the blade during scan exposure of the wafer to reduce a temperature deviation between the field region and the frame region heated by the exposure. Wafer exposure method using can be presented.

The heating of the frame region of the reticle may include irradiating infrared rays to the frame region of the reticle.

According to an embodiment of the present invention, the present invention can reduce the temperature variation for each region of the reticle caused by the local heating of the reticle by the scanning exposure light using the blade in the exposure process, the thermal expansion for each region due to the local heating It is possible to provide a scanner-type exposure apparatus capable of compensating and reducing the occurrence of an overlay error in the exposure process due to the deviation.

1 shows a reticle and a blade of a typical exposure apparatus.
2 is a temperature distribution map of a reticle showing a phenomenon in which a reticle is heated by an exposure process in a typical exposure apparatus.
3 to 5 are views for explaining the exposure apparatus according to the first embodiment of the present invention.
6 is a temperature distribution map of a reticle showing a phenomenon in which a reticle is heated by exposure in an exposure apparatus according to a first embodiment of the present invention.
7 and 8 are views provided to explain an exposure apparatus according to a second embodiment of the present invention.
9 is a temperature distribution map of a reticle showing a phenomenon in which a reticle is heated by exposure in an exposure apparatus according to a second exemplary embodiment of the present invention.

Embodiments of the present invention present exposure equipment incorporating auxiliary heating that intentionally heats the frame region of the reticle covered by the blade. Infrared lamp (IR lamp) is introduced into the blade of the scanner-type exposure equipment as an auxiliary heating unit, or a reticle holder holding and holding the reticle is configured as a heating holder including a heating block, It can be configured to heat the frame region to be. By heating the frame region of the reticle, in which the exposure light is not incident and blocked, by using the auxiliary heating unit, the temperature of the frame region of the reticle is equal to or similar to the temperature increase of the field region of the reticle through which the exposure light is transmitted and heated during the exposure process. Can be raised.

Accordingly, the temperature variation between the center portion and the frame region, which is the field region of the reticle, may be reduced between the edge portions, and accordingly, the variation in the degree of thermal expansion due to the temperature rise may be reduced. That is, the temperature distribution can be kept uniform over the entire reticle region, and the local thermal flatness can be changed by a large temperature variation, thereby suppressing the occurrence of overlay error locally. Therefore, the overlay error accompanied by the thermal expansion of the reticle according to the rise of the reticle temperature can be effectively controlled and compensated only by the process of correcting the alignment of the reticle.

3 to 5, the exposure apparatus according to the first embodiment of the present invention may be configured as a scanner exposure apparatus. For example, the ArF light source 300 providing the reticle 100 and the exposure light 301 of the circuit patterns 103 to pattern-transfer to the transparent substrate 101 by exposure and the frame patterns 105 to be shielded to the blade 200. ), A lens unit 400 through which the exposure light 301 is transmitted to reduce and project the image of the circuit pattern 103, and a stage 501 on which the wafer 500 to which the image is to be transferred is mounted. Can be.

The blade 200 introduced for the scanning exposure has a slit 201 through which the exposure light 301 passes, and on the rear surface of the blade 200, a field area of the reticle 100 to which the exposure light 301 is incident (FIG. An infrared lamp 210 is attached as an auxiliary heating unit for heating the frame region (107 in FIG. 5) in which the exposure light 301 other than 109 in 5 is blocked. The infrared ray lamp 210 corresponds to a temperature of the field region 109 of the reticle 100 heated by the transmission of the exposure light 301 by heating the infrared ray 211 to the frame region 107 during the exposure process. Alternatively, or similarly, the temperature of the frame region 107 is raised. As shown in FIG. 6, which is a temperature distribution map measuring the temperature of the reticle after exposing approximately 25 wafers, the field region (109 of FIG. 5). The temperature of the edge portion 108 of FIG. 6 corresponding to the frame region 107 of FIG. 5 may also be increased similarly to the degree of temperature rise of the center portion 106 of FIG. 6.

By intentionally heating a portion of the frame region (107 of FIG. 5) with the infrared 211 irradiation heating by an infrared lamp (210 of FIG. 5), as shown in FIG. 6, the temperature deviation across the reticle 100 is reduced. You can. Accordingly, it is possible to alleviate the change in the degree of thermal expansion for each region according to the temperature variation, thereby alleviating the serious weighting of the local overlay error due to the thermal expansion variation. Therefore, the overlay error due to thermal expansion can be effectively compensated by correcting the alignment of the reticle, and it is possible to effectively compensate for the exposure failure caused by the overlay error.

7 and 8, the exposure apparatus according to the first embodiment of the present invention is a reticle holder for holding and holding the reticle 100 in order to intentionally heat the frame region 107 of the reticle 100. The holder may be configured as a heating holder (250). The heating holder 250 may heat the frame region 107 in contact with the reticle 100 by using a heating unit or a heating coil such as a heating block 251. By heating the frame region 107, the temperature of the frame region 107 is raised to be equivalent or similar to the temperature of the field region 109 of the reticle 100 heated by the transmission of the exposure light 301. As shown in FIG. 9, which is a temperature distribution map measuring the temperature of the reticle after exposing approximately 25 wafers, the degree of temperature rise in the center portion (116 of FIG. 9) corresponding to the field region (109 of FIG. 8). Similarly, the temperature of the edge portion 118 of FIG. 9 corresponding to the frame region 107 of FIG. 8 may also be increased.

Accordingly, a more uniform temperature distribution can be realized throughout the reticle 100, thereby reducing the temperature deviation. It is possible to alleviate the change in the degree of thermal expansion for each region according to the temperature variation, thereby alleviating the serious weighting of the local overlay error due to the thermal expansion variation. Therefore, the overlay error due to thermal expansion can be effectively compensated by correcting the alignment of the reticle, and it is possible to effectively compensate for the exposure failure caused by the overlay error.

100: reticle, 107: field area,
109: frame area, 200: blade,
210: infrared lamp, 250: heating holder.

Claims (5)

A light source for providing exposure light;
A stage on which the wafer is mounted;
A lens unit introduced on the wafer to project the exposure light;
A reticle introduced on the lens portion;
A blade introduced on the reticle to limit and expose a field region of the reticle to which the exposure light is incident; And
And an auxiliary heating unit for heating a frame region of the reticle covered by the blade.
The method of claim 1,
The auxiliary heating unit
And an infrared lamp attached to the blade for irradiating infrared rays to the frame region of the reticle.
The method of claim 1,
The auxiliary heating unit
And a heating holder holding the reticle and heating the frame area of the reticle.
A light source for providing exposure light; A stage on which the wafer is mounted; A lens unit introduced on the wafer to project the exposure light; A reticle introduced on the lens portion; Scanning the wafer using exposure equipment including a blade introduced on the reticle to limit and expose a field region of the reticle to which the exposure light is incident; And
Exposing a frame region of the reticle covered by the blade during scan exposure of the wafer, thereby reducing a temperature deviation between the field region and the frame region heated by the exposure; Used wafer exposure method.
5. The method of claim 4,
Heating the frame area of the reticle
And irradiating infrared rays to the frame region of the reticle.
KR1020110085450A 2011-08-26 2011-08-26 Lithography equipment with inducing uniform heating on reticle and wafer exposure method by using the same KR20130022676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020110085450A KR20130022676A (en) 2011-08-26 2011-08-26 Lithography equipment with inducing uniform heating on reticle and wafer exposure method by using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110085450A KR20130022676A (en) 2011-08-26 2011-08-26 Lithography equipment with inducing uniform heating on reticle and wafer exposure method by using the same

Publications (1)

Publication Number Publication Date
KR20130022676A true KR20130022676A (en) 2013-03-07

Family

ID=48175277

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110085450A KR20130022676A (en) 2011-08-26 2011-08-26 Lithography equipment with inducing uniform heating on reticle and wafer exposure method by using the same

Country Status (1)

Country Link
KR (1) KR20130022676A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018513421A (en) * 2015-04-21 2018-05-24 エーエスエムエル ネザーランズ ビー．ブイ． Lithographic apparatus
US10451983B2 (en) 2018-02-23 2019-10-22 Samsung Electronics Co., Ltd. Exposure apparatus and method of fabricating semiconductor device using the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018513421A (en) * 2015-04-21 2018-05-24 エーエスエムエル ネザーランズ ビー．ブイ． Lithographic apparatus
US10935895B2 (en) 2015-04-21 2021-03-02 Asml Netherlands B.V. Lithographic apparatus
US10451983B2 (en) 2018-02-23 2019-10-22 Samsung Electronics Co., Ltd. Exposure apparatus and method of fabricating semiconductor device using the same

Similar Documents

Publication Publication Date Title
TWI383268B (en) Device manufacturing method, computer readable medium and lithographic apparatus
JP2011233781A (en) Lithographic apparatus and method for manufacturing article
US10025190B2 (en) Substrate treatment system
JP4488867B2 (en) Pattern formation method
KR20130022676A (en) Lithography equipment with inducing uniform heating on reticle and wafer exposure method by using the same
US7319505B2 (en) Exposure apparatus and device fabrication method
US20070009816A1 (en) Method and system for photolithography
WO2015115166A1 (en) Substrate processing system, substrate processing method, and computer storage medium
US10048604B2 (en) System and method for lithography with leveling sensor
JP2010283305A (en) Exposure apparatus and method of manufacturing device
TW201335694A (en) Reticle design for the reduction of lens heating phenomenon
JP2004071978A (en) Method for managing exposure device, method for managing mask, method for exposure, and method for manufacturing semiconductor device
KR100945924B1 (en) Method for modifying distortion aberration of lens
JP2973737B2 (en) Exposure method and exposure apparatus used for carrying out the method
KR20080062752A (en) Method for manufacturing psm
JP2014165460A (en) Semiconductor manufacturing apparatus and semiconductor device manufacturing method
US20090290134A1 (en) Exposure method
JPH06196383A (en) Aligner
CN116819882A (en) Mask plate group and exposure equipment using same
JP4313064B2 (en) Exposure system provided with exposure apparatus
US20050026048A1 (en) Proximity correcting lithography mask blanks
CN110147032A (en) Mask mobile device, litho machine and photolithography method
JP4242804B2 (en) Semiconductor element manufacturing method and manufacturing apparatus
CN101609261B (en) Method for exposure
JP2005268439A (en) Method and system for unmagnified x-ray exposure

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination