KR20130007213A - The light emitting device - Google Patents

The light emitting device Download PDF

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Publication number
KR20130007213A
KR20130007213A KR1020110064413A KR20110064413A KR20130007213A KR 20130007213 A KR20130007213 A KR 20130007213A KR 1020110064413 A KR1020110064413 A KR 1020110064413A KR 20110064413 A KR20110064413 A KR 20110064413A KR 20130007213 A KR20130007213 A KR 20130007213A
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KR
South Korea
Prior art keywords
light emitting
emitting device
chip
cells
pad
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Application number
KR1020110064413A
Other languages
Korean (ko)
Inventor
김종환
김선모
박건
Original Assignee
(주)세미머티리얼즈
박건
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Priority to KR1020110064413A priority Critical patent/KR20130007213A/en
Publication of KR20130007213A publication Critical patent/KR20130007213A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Abstract

The present invention relates to a light emitting device, comprising: a substrate; At least one first light emitting device package on the substrate; And at least one second light emitting device package connected to the first light emitting device package in a reverse direction with respect to a power source, wherein each of the first and second light emitting device packages has a plurality of light emitting diodes forming respective cells. A light emitting chip comprising: a first pad disposed at a central area of one side and a second pad formed at a central area of the other side; and the light emitting chip is connected to one substrate in series. It provides an AC light emitting device comprising the light emitting cell of the 18 to 18. Therefore, by setting the number of light emitting cells formed in one light emitting chip to 18 or less, it is possible to optimize the driving voltage applied to each light emitting cell and the amount of heat generated in the light emitting chip.

Description

Light Emitting Device {THE LIGHT EMITTING DEVICE}

The present invention relates to a light emitting device. In particular, the present invention relates to an AC light emitting device including a light emitting diode.

A light emitting diode (LED) may form a light emitting source using compound semiconductor materials such as GaAs series, AlGaAs series, GaN series, InGaN series, and InGaAlP series.

Such a light emitting diode is packaged and used as a light emitting device that emits a variety of colors, and the light emitting device is used as a light source in various fields such as a lighting indicator for displaying a color, a character display, and an image display.

The present invention provides an AC light emitting device having a novel structure.

The present invention also provides a light emitting device for alternating current having a plurality of light emitting chips alternately operated by an AC power source.

The present invention also provides a light emitting device for alternating current, in which a first pad cell is disposed in a central side region of a light emitting chip, and a second pad cell is disposed in an area opposite to the first pad cell.

This embodiment is a substrate; At least one first light emitting device package on the substrate; And at least one second light emitting device package connected to the first light emitting device package in a reverse direction with respect to a power source, wherein each of the first and second light emitting device packages has a plurality of light emitting diodes forming respective cells. A light emitting chip comprising: a first pad disposed at a central area of one side and a second pad formed at a central area of the other side; and the light emitting chip is connected to one substrate in series. It provides an AC light emitting device comprising the light emitting cell of the 18 to 18.

According to an embodiment of the present invention, a plurality of light emitting cells formed on a light emitting chip are formed in the same structure, and the plurality of light emitting cells are connected in series to simultaneously drive to simplify the connection between cells, and the number of masks used is Can be reduced.

In addition, by setting the number of light emitting cells formed in one light emitting chip to 18 or less, it is possible to optimize the driving voltage applied to each light emitting cell and the amount of heat generated by the light emitting chip.

In addition, by arranging the pad in the middle region of the light emitting chip, not in the corner region, it is possible to easily secure space during wire bonding and to reduce the damage of the light emitting chip because a force is applied to the middle region instead of the corner region. have.

1 is a perspective view of a light emitting device according to a first embodiment of the present invention.
FIG. 2 is a cross-sectional view illustrating the light emitting device package illustrated in FIG. 1.
3 is a circuit diagram of the light emitting device of FIG. 1.
4 is a detailed circuit diagram illustrating an example of the light emitting device of FIG. 1.
FIG. 5 is a top view of the light emitting chip according to the detailed circuit diagram of FIG. 4.
6 is a cross-sectional view taken along the line II ′ of the light emitting chip of FIG. 5.
FIG. 7 is a cross-sectional view taken along line II-II ′ of the light emitting chip of FIG. 5.
FIG. 8 is a diagram illustrating a direction of a current flowing through the light emitting chip of FIG. 5.
9 is a top view of a light emitting chip according to another embodiment of the present invention.
10 is a top view of a light emitting chip according to another embodiment of the present invention.
11 is an exploded perspective view of a light emitting device according to another embodiment of the present invention.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the drawings, parts irrelevant to the description are omitted in order to clearly describe the present invention, and like reference numerals designate like parts throughout the specification.

Throughout the specification, when a part is referred to as being "connected" to another part, it includes not only "directly connected" but also "electrically connected" with another part in between .

Throughout the specification, when a part is said to "include" a certain component, it means that it can further include other components, without excluding other components unless specifically stated otherwise.

The present invention relates to a light emitting device including a plurality of light emitting chips having a plurality of light emitting cells, wherein the plurality of light emitting chips selectively emit light according to an alternating voltage, and an optimal number of light emitting cells are formed on each light emitting chip. It is characterized by.

Hereinafter, a light emitting device according to a first exemplary embodiment of the present invention will be described with reference to FIGS. 1 to 7.

1 is a perspective view of a light emitting device according to a first embodiment of the present invention, FIG. 2 is a cross-sectional view illustrating a light emitting device package shown in FIG. 1, and FIG. 3 is a circuit diagram of the light emitting device of FIG. 1.

Referring to FIG. 1, the light emitting device 100 is installed in a case body 110, a plurality of light emitting device packages 200A-200D installed in the case body 110, and a case body 110, and supplies power from an external power source. It may include a connection terminal 120 provided.

The case body 110 is preferably formed of a material having good heat dissipation properties, for example, may be formed of a metal or a resin.

The light emitting device packages 200A-200D are mounted on the substrate 150.

The substrate 150 may be a circuit pattern printed on the insulator, for example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, and the like. It may include.

In addition, the substrate 150 may be formed of a material that reflects light efficiently, or the surface may be formed of a color in which light is efficiently reflected, for example, white, silver, or the like.

Each of the light emitting device packages 200A to 200D includes at least one light emitting chip, and each of the light emitting chips may include a plurality of light emitting diodes (LEDs) forming each cell.

The light emitting device packages 200A to 200D may be arranged to have a combination of various light emitting diodes in order to obtain color and luminance. For example, the white light emitting device, the red light emitting device, and the green light emitting device may be combined to secure high color rendering (CRI).

In addition, a fluorescent sheet may be further disposed on a traveling path of light emitted from the light emitting device packages 200A-200D, and the fluorescent sheet changes the wavelength of light emitted from the light emitting device packages 200A-200D.

For example, when the light emitted from the light emitting device packages 200A-200D has a blue wavelength band, the fluorescent sheet may include a yellow phosphor, and the light emitted from the light emitting device packages 200A-200D passes through the fluorescent sheet. Finally it is seen as white light.

The connection terminal 120 may be electrically connected to the light emitting device packages 200A-200D to supply power. According to FIG. 1, the connection terminal 120 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 120 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

In addition, as shown in FIG. 1, the lens 140 further includes a lens 140 connected to the case body 110 to cover the light emitting device packages 200A to 200D. The lens 140 may be formed of transparent or translucent glass, and may have a hemispherical shape around the substrate 150 on which the light emitting device packages 200A-200D are mounted.

In the light emitting device 100 as described above, at least one of a light guide member, a diffusion sheet, a light collecting sheet, a luminance rising sheet, and a fluorescent sheet is disposed on a path of the light emitted from the light emitting device packages 200A-200D. The desired optical effect can be obtained.

In this case, an even number of the light emitting device packages 200A-200D may be arranged. For example, four light emitting device packages 200A-200D may be arranged in a matrix form as shown in FIG. 1. Meanwhile, in the exemplary embodiment of the present invention, a light emitting device composed of four light emitting chips has been described by way of example, but the present invention is not limited thereto.

Each light emitting device package 200A-200D may have the same structure.

In detail, as shown in FIG. 2, the light emitting device packages 200A to 200D include a body 210 including a cavity, a light emitting chip 500, a resin material 260, and first and second conductive members 250 and 240. .

The body 210 may be injection molded to a predetermined shape, including any one material of polyphthalamide (PPA), liquid crystal polymer (LCP), syndiotactic polystyrene (SPS), or ceramic (ceramics), but is not limited thereto. It doesn't work. The upper portion 220 of the body 210 is formed with a cup-shaped cavity 215 to a predetermined depth. The side surface of the cavity 215 may be formed to be inclined by a predetermined angle with respect to an axis perpendicular to the bottom surface.

 The body 210 has a plurality of first and second conductive members 250 and 240 arranged horizontally.

The first and second conductive members 250 and 240 are exposed to the inside of the cavity 215 and are electrically separated from each other. Both ends of the first and second conductive members 250 and 240 are exposed to the outside of the body 210 to serve as electrodes, and the region used as the electrode may be bent to the lower portion of the body 210 as shown in FIG. 2. Reflecting materials may be coated on the surfaces of the first and second conductive members 250 and 240.

The light emitting chip 500 is bonded to the bottom surface of the cavity 215 between the first conductive member 250 and the second conductive member 240, and the first and second conductive members 250 and 240 are connected through the respective wires 250. ) Can be connected.

The light emitting chip 500 may be mounted using a wire bonding, die bonding, or flip bonding method. The bonding method may be changed according to the chip type and the electrode position of the chip.

 The light emitting chip 500 may selectively include a semiconductor light emitting diode manufactured using a compound semiconductor of Group III and Group V elements, such as AlInGaN, InGaN, GaN, GaAs, InGaP, AllnGaP, InP, InGaAs, and the like. have.

In addition, each light emitting chip 500 may include a blue LED chip, a yellow LED chip, a green LED chip, a red LED chip, a UV LED chip, an amber LED chip, a blue-green LED chip, and the like.

The structure of the light emitting chip 500 will be described in detail later.

In addition, the first and second conductive members 250 and 240 may be electrically connected to a protection element such as a zener diode (not shown) to protect the light emitting chip 500.

Meanwhile, a reflective layer (not shown) may be formed on the side surface of the cavity 215, and the resin material 260 is formed by filling the cavity 215. The resin 260 may include a transparent silicon or epoxy material and may include a phosphor.

Referring back to FIG. 1, two light emitting device packages 200A and 200B arranged diagonally among four light emitting device packages 200A to 200D arranged on the substrate 150 are simultaneously driven and adjacent light emitting device packages ( 200C, 200D) are alternately driven to generate light.

That is, in FIG. 1, the first light emitting device package 200A and the second light emitting device package 200B on the diagonal of the first light emitting device package 200A are simultaneously driven, and the third light emitting device package 200C and the diagonal thereof are driven. The fourth LED package 200D is simultaneously driven, and the operation of the first and second LED package 200A and 200B and the operation of the third and fourth LED package 200C and 200D are alternately performed. do.

Alternate light emission of the light emitting device packages 200A to 200D proceeds by applying the AC power source 150.

Referring to FIG. 3, four light emitting device packages 200A to 200D connected to the AC power supply 150 are shown as light emitting diodes because each of the light emitting device packages 200A to 200D operates as one light emitting diode.

The first light emitting device package 200A and the diagonal second light emitting device package 200B are connected in series between the first node n1 and the second node n2, and are connected to the third light emitting device package 200C. The diagonal fourth light emitting device package 200D is connected in series between the first node n1 and the second node n2, and the first and second light emitting device packages 200A and 200B and the third and second light emitting device packages 200D are connected in series. The fourth light emitting device packages 200C and 200D are connected in the reverse direction.

That is, the first node n1 is connected to the negative electrode of the first light emitting device package 200A and the positive electrode of the third light emitting device package 200C, and the second node n2 is the second light emitting device. It is connected to the positive electrode of the device package 200B, and is connected to the negative electrode of the fourth light emitting device package 200D.

An AC power source 150 is connected between the first node n1 and the second node n2, and a resistor for matching between the AC power source 150 and the first node n1 or the second node n2. R1 or a capacitor may be connected.

Therefore, when a negative voltage is applied to the first node n1 for one half of a period from the AC power supply 150, the first and second light emitting device packages 200A and 200B become conductive to light emitting device packages 200A and 200B. When the light emitting chip 500 generates light and the third and fourth light emitting device packages 200C and 200D do not operate due to a reverse voltage applied thereto, and a positive voltage is applied to the first node n1 during the next half cycle. The third and fourth light emitting device packages 200C and 200D are turned on so that the light emitting chips 500 of the light emitting device packages 200C and 200D generate light, and the first and second light emitting device packages 200A and 200B are driven. I never do that.

In this case, the AC power supply 150 may be 110V and have a period of 60 Hz.

Therefore, since the first and second light emitting device packages 200A and 200B and the third and fourth light emitting device packages 200C and 200D alternately generate light for a short time, the light emitting device 100 may constantly light the naked eye. It can be recognized by examining.

In this case, the light emitting chips 500 in each of the light emitting device packages 200A to 200D may include a plurality of light emitting diodes, and the light emitting diodes constituting the light emitting chip 500 may be as shown in FIG. 4.

4 is a detailed circuit diagram according to an embodiment of the light emitting device.

Referring to Figure 4, each light emitting device (200A-200D) includes a plurality of light emission of the same suhyo in the light emitting chip 500 is a diode (DA1-DA l, DB1-DB l, DC1-DC l, DD1-DD l ), And a plurality of light emitting diodes DA1-DA l , DB1-DB l , DC1-DC l , DD1-DD l are connected in series in one light emitting chip 500.

That is, and the negative electrode of the first light emitting device l of emission in the (200A) diodes (DA1-DA l) of the first light emitting diode (DA1) connected to the first node (n1), a positive electrode of claim 2 is connected to the negative electrode of the light emitting diode DA2. The series connection is connected to the first l- 1 light emitting diode DA l -1, and the positive electrode of the first l light emitting diode DA l is connected to the first light emitting diode DB1 of the third light emitting device package 200B. The first light emitting device package 200A and the second light emitting device package 200B are connected in series by being connected to the negative electrode of FIG.

A second light emitting device package, and (200B) a plurality of light emitting diodes (DB1-DB l) is also a serial connection, connected to both the second node (n2) electrode of the last light-emitting diode of claim l emitting diode (DB l) do.

The positive electrode of the first light emitting diode DC1 of the third light emitting device package 200C is connected to the first node n1, and the last first light emitting diode DC l is the fourth light emitting device package 200D. ) the first light emitting diode (DD1) is connected to, a l light emitting diode (which is a negative electrode of the DD l) connected to the second node (n2), the third and the fourth light emitting device (200C, 200D) of the series Connect.

In this way, each light emitting device (200A-200D) and a plurality of light emitting diodes are (DA1-DA l, DB1- DB l, DC1-DC l, DD1-DD l) a series connection synchronizer in, it is applied to the voltage When the voltage is divided , the voltage corresponding to the driving voltage of each of the light emitting diodes DA 1 -DA 1 , DB 1 -DB 1 , DC 1 -DC 1 , DD 1 -DD 1 may be applied to the individual diodes.

That is, the number L of light emitting diodes in one light emitting device package 200A-200D is determined according to the following equation.

[Mathematical Expression]

L = V SOURCE / (mx V driving )

In this case, V SOURCE is the maximum value of the AC power supply 150, m is the number of light emitting device packages 200A-200D connected in series, V driving means a driving voltage for driving one light emitting diode.

For example, when the AC power supply 150 is 110V, and two light emitting device packages 200A and 200B connected in series are connected in series, and one driving diode has a driving voltage of 3.0V to 3.4V, one light emission may occur. The number L of light emitting diodes of the device package satisfies 16 to 18.

Therefore, 16 to 18 light emitting diodes DA1-DA l, DB1-DB l, DC1-DC l , DD1-DD l , and ( l = 16-18) may be connected in series in one package 200A-200D. In this case, 16 to 18 light emitting diodes DA1-DA l , DB1-DB l, DC1-DC l , and DD1-DD l in one light emitting device package 200A-200D may be provided in one light emitting chip 500. Can be formed.

Hereinafter, an example of the light emitting chip 500 of the light emitting device 100 according to the present embodiment will be described with reference to FIGS. 5 to 7.

5 is a top view of the light emitting chip according to the detailed circuit diagram of FIG. 4, FIG. 6 is a cross-sectional view of the light emitting chip of FIG. 5 taken along line II ′, and FIG. 7 is a view of the light emitting chip of FIG. It is a cut section.

5 to 7, one light emitting chip 500 mounted in each light emitting device package 200A-200D includes a plurality of light emitting diodes, for example, 18 light emitting diodes.

Since each of the light emitting diodes DA1-DA l , DB1-DB l , DC1-DC l , DD1-DD l functions as one cell in one light emitting chip 500, hereinafter, each light emitting diode DA1-DA l , DB1-DB l , DC1-DC l , DD1-DD l ) are named as light emitting cells.

In the light emitting chip 500, a first pad 590 is formed in a central region of one surface of four sides, and a second pad 591 is formed in an area opposite to the first pad 590. In the present embodiment, but is illustrated in the central region of the left / right side, but this is not restrictive. That is, it may be formed in the central region of the upper and lower sides instead of the left and right sides.

The first pad 590 and the second pad 591 are used for wire bonding with a package electrode. The first pad 590 is a P-type electrode pad, and positive power is applied thereto, and the second pad is applied to the second pad. 591 is an N-type electrode pad, and negative power is applied.

As such, by arranging the first pad 590 and the second pad 591 in the center region of the light emitting chip 500 instead of the edge portion, the space can be easily secured at the time of wire bonding. In addition, since the force is applied to the center region instead of the edge portion during wire bonding, damage to the light emitting chip 500 may be reduced.

A plurality of light emitting cells are arranged on the substrate 510.

The plurality of light emitting cells are arranged in a matrix form on the substrate 510. When the light emitting cells have 18 light emitting cells, the plurality of light emitting cells may have a matrix form of 5 × 4, and the first and second pads 590 and 591 are formed. It may have an area twice as large as other neighboring light emitting cells.

Sixteen light emitting cells are connected in series between the first pad 590 and the second pad 591. The n-electrode 585 formed on the 18 light emitting cells is positioned in the corner region or the middle region of one surface. Here, the position of the n electrode 585 may be changed according to the design of the light emitting chip 500, but is not limited thereto.

When power is applied to the light emitting chip 500, current flows from the first pad 590 toward the second pad 591. For example, as shown in FIG. 8, when positive power is applied to the first pad 590, current is transferred to the second pad 591 via light emitting diodes connected in series to the first pad 590. Will flow. That is, the current flows in the arrow direction (->) in the light emitting chip 500.

In this case, the pads 590 and 591 are not formed in the corner region but are formed in the center region, so that current does not flow along the row or column, but starts from the first pad 590 and flows in the column direction and then in the row direction. After folding, it flows again in a column direction to reach the second pad 591.

At this time, the direction of current flow is symmetrical in the flow of columns 1, 2 and 5, 4 with respect to the two pads (590, 591).

The substrate 510 may be an insulating or conductive substrate 510, and may be, for example, sapphire (Al 2 O 5 ) or silicon carbide (SiC).

Each of the light emitting cells may include a first conductivity type semiconductor layer 550, a second conductivity type semiconductor layer 550 and a first conductivity type semiconductor layer disposed on one region of the first conductivity type semiconductor layer 550. An active layer 540 is included between the 550 and the second conductive semiconductor layer 550.

The first and second conductive semiconductor layers 550 and 550 are n-type and p-type, or p-type and n-type, respectively.

The first conductive semiconductor layer 550, the active layer 540, and the second conductive semiconductor layer 550 may be formed of a gallium nitride-based semiconductor material, that is, (B, Al, In, Ga) N.

The active layer 540 may be a semiconductor layer formed of a multi-quantum well structure.

In FIGS. 6 and 7, the buffer layer 520 is further included between the substrate 510 and the first conductivity-type semiconductor layer 550. However, the buffer layer 520 may be deleted.

In addition, a plurality of patterns may be formed on the surface of the substrate 510, and light may be scattered by the plurality of patterns to increase luminous efficiency.

The transparent electrode layer 560 is formed on the second conductive semiconductor layer 550.

The transparent electrode layer 560 transmits light generated by the active layer 540 and distributes and supplies current to the second conductive semiconductor layer 550.

In this case, the stacked structure on the first conductive semiconductor layer 550 is formed to have a smaller area than the upper surface of the first conductive semiconductor layer 550, and each light emitting cell has a first upper surface on which the transparent electrode layer 560 is formed. And a second upper surface through which the first conductive semiconductor layer 550 is exposed.

A first insulating layer 570 is formed to cover the entirety of the light emitting chip, and the first insulating layer 570 is exposed on the transparent electrode layer 560 and on the second upper surface of the first conductive semiconductor layer 550. Openings 571 and 572 to be included.

An n electrode 585 is formed in the opening 572 of the openings 571 and 572 exposing the first conductivity-type semiconductor layer 550.

Wiring 580 connecting the n electrode 585 on the first conductive semiconductor layer 550 to the opening 571 exposing the transparent electrode layer 560 of a neighboring cell on the first insulating layer 570. This is formed to connect neighboring cells in series.

A second insulating layer 575 is formed on the entire surface of the chip to cover the wiring 580, and the second insulating layer 575 prevents the wiring 580 from being contaminated by moisture or the like. 580 and the light emitting cells are prevented from being damaged.

The second insulating layer 575 includes an opening that exposes a part of the transparent electrode layer 560 of the light emitting cell in which the pads 590 and 591 are formed and a part of the first conductive semiconductor layer 550.

First and second pads 590 and 591 are formed in an area exposed by the opening of the second insulating layer 575 to connect with an external package, and the selected cells are defined as first and last cells.

As such, a plurality of cells formed in one light emitting chip 500 are formed in the same structure, and a plurality of cells in one light emitting chip 500 are connected in series and simultaneously driven to simplify connection between cells. The number of masks to be reduced is simplified, making the manufacturing process simple and economical.

In addition, since the leakage current is reduced by simplifying the connection of the wiring 580 in the light emitting chip 500, device reliability may be secured.

On the other hand, the side wall of the light emitting cell is formed to be inclined with respect to the upper surface of the substrate 510 may be narrower toward the top. The inclination of the sidewalls improves the emission efficiency of the light generated in the active layer 540 and aids in the conformal deposition of other layers to be formed on the light emitting cells.

In addition, when a plurality of light emitting cells formed on one light emitting chip 500 are simultaneously driven, deterioration of the light emitting chip 500 is problematic due to a large amount of heat, but according to the present invention, light emission is formed in each light emitting chip 500. By limiting the number of cells, deterioration of the light emitting chip 500 can be prevented.

That is, in the present invention, by limiting the number of light emitting cells formed in one light emitting chip 500 to 16 to 18, the size of the voltage assigned to each light emitting chip 500 is designed to meet about 55V.

Therefore, the amount of heat that the substrate 510 and the wire 250 of the light emitting chip 500 can endure can be reduced by reducing the amount of heat generated by one light emitting chip 500, thereby deteriorating the substrate 510 and the wire 250. Can be prevented.

Meanwhile, the light emitting device 100 of the present invention may be formed as shown in FIGS. 9 and 10 according to a driving voltage applied to one cell.

That is, referring to FIG. 9, a plurality of matrix type light emitting cells are arranged in one light emitting chip 500A. For example, 16 light emitting cells may have an array of 4 × 4.

In the light emitting chip 500A of FIG. 9, all cells including the cells in which the pads 590 and 591 are formed have the same size, and the two pads 590 and 591 are disposed in the center region of the edge row.

The flow of current is the same as that of the light emitting chip 500 of FIG. 5.

In this case, the light emitting chip 500A of FIG. 9 has the same length as that of the wiring 580 connected to the n electrode 585 on the transparent electrode layer 560 in all light emitting cells.

That is, the wiring 580 of each light emitting cell may have a different shape in the transparent electrode layer 560, which is located far from the position of the n electrode 585 of each light emitting cell so as to spread the current uniformly. For sake.

The wiring 580 on the transparent electrode layer 560 functions as a p electrode, and has the same length in all light emitting cells.

In the case of the light emitting cells of one row and one column, the wiring 580 on the transparent electrode layer 560, that is, the p-electrode has a stripe shape and extends in the column direction, and extends from one end of the top surface of the light emitting cell to the other end. In the case of the light emitting cells of one row and two columns, the p electrodes have a stripe shape and extend in the column direction, but are spaced apart from both ends of the upper surface of the light emitting cell.

In addition, in the case of the first row and the fourth column, the p-electrodes extend from the center of the upper surface to be bent at the corners.

As described above, all of the light emitting cells except for the light emitting cells in which the first pads 590 are formed may have p-electrodes having different shapes and the same length, thereby inducing a current spreading effect.

The light emitting chip 500A has a structure in which a plurality of light emitting diodes, that is, light emitting cells are disposed on the substrate 510, and the layer structure of the light emitting cells is the same as in FIGS. 6 and 7, and thus description thereof is omitted.

On the other hand, in the light emitting chip 500B of FIG. 10, a plurality of light emitting cells are formed on the rectangular chip substrate 510, but the size of the light emitting cells is different from each other.

The light emitting chip 500B includes 17 light emitting cells.

The light emitting chips 500B are formed in four rows, and the widths of the light emitting cells in each column have the same length.

In this case, four light emitting cells are formed in the first, second, and fourth columns, and the first and second pads 590 and 591 are formed in the central region of the first and fourth columns, preferably in the third row. .

The light emitting cells in which the pads 590 and 591 are formed have a width larger than the vertical width of the adjacent rows and thus have a larger area than the light emitting cells of the adjacent rows.

At this time, five light emitting cells are positioned in the third column, and the vertical width of at least three light emitting cells of the five light emitting cells is smaller than the vertical width of the light emitting cells in the adjacent columns.

In this way, 17 light emitting cells may be formed in one light emitting chip 500B to form a driving voltage applied to each light emitting chip 500B to be close to 3.2V. As shown in FIG. The shape of may be implemented in various ways.

11 is an exploded perspective view of a light emitting device according to a second embodiment of the present invention.

Referring to FIG. 11, another lighting device 1000 according to the present invention includes a fluorescent cover 1220, a light emitting device, and a main body 1210.

The main body 1210 includes an accommodating part accommodating a light emitting device and power terminals 1250 positioned at both ends of the accommodating part. The fluorescent cover 1220 and the light emitting device are mounted in the accommodating part of the main body 1210. In addition, a power supply device (not shown) connected to the power terminal 1250 to supply power may be connected to or included in the main body 1210. Switched-mode power supply (SMPS) may be used as the power supply.

In addition, the main body 1210 may further include a ballast (not shown) that is connected to a fluorescent lamp in series with a choke coil wound around a core to prevent an increase in current.

The light emitting device includes at least one light emitting device package 200A-200D that emits light by power received from a power supply device, and a module substrate 1240 on which the light emitting device packages 200A-200D are mounted.

The fluorescent cover 1220 is coupled to the main body 1210, the fluorescent cover 1220 is a plate shape having a constant thickness, the plate shape is a cross-sectional shape of the cross-sectional shape, the cross-sectional shape is a semi-circular shape, cross section The shape of the semi-elliptic, the shape of the cross section may be provided in a variety of shapes, such as an open polygon.

The fluorescent cover 1220 may be spaced apart from the light emitting device.

The fluorescent cover 1220 includes a plurality of phosphors therein, and when the light is received from the light emitting device 1210, the phosphor emits light while being excited and transitions to the ground state.

The lighting apparatus 1000 of FIG. 11 may apply a light emitting device including the light emitting device packages 200A to 200D having the structure described with reference to FIGS. 1 to 10.

That is, the light emitting device packages 200A to 200D may include the third and fourth light emitting device packages between the first and second light emitting device packages 200A and 200B connected in series among the four light emitting device packages shown in FIG. 1. By placing the 200C and 200D, the light emitting device packages 200A to 200D that are formed in a row may alternately emit light.

In addition, since the light emitting device packages 200A-200D include a bar type light emitting chip 500 that is not a matrix type, the first to fourth light emitting device packages 200A-200D may be formed of a bar type substrate ( 1240 may be alternately formed over the heat.

The structure of the light emitting chip 500 and the structure of the package of the light emitting device package 200A-200D is not limited to the above description, but a plurality of light emitting diodes of one light emitting device package 200A-200D are driven simultaneously to emit light. Is the same.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, It belongs to the scope of right.

Light emitting device 100, 1000
Case body 110
Connection element 120
Light emitting device package 200A, 200B, 200C, 200D
Light emitting chip 500
AC power supply 150
Pad 590, 591

Claims (13)

Board;
At least one first light emitting device package on the substrate; And
At least one second light emitting device package connected to the first light emitting device package in a reverse direction with respect to a power source;
Each of the first and second light emitting device packages includes a light emitting chip in which a plurality of light emitting diodes form respective cells.
The light emitting chip includes a first pad disposed at a central region of one side and a second pad formed at a central region of the other side.
The light emitting chip includes a light emitting cell of the 16 to 18 are connected in series to one substrate. The method of claim 1,
The light emitting chip is an AC light emitting device wherein the light emitting cells are arranged in a matrix form. The method of claim 1,
The light emitting chip,
Chipboard,
The plurality of light emitting cells formed on the chip substrate;
A first insulating layer covering the plurality of light emitting cells,
A wiring for electrically connecting the light emitting cell and the light emitting cell adjacent to the insulating layer;
A second insulating layer covering the wiring;
The light emitting cell
A first conductivity type semiconductor layer on the chip substrate,
An active layer on the first conductivity type semiconductor layer,
A second conductivity type semiconductor layer on the active layer, and
A light emitting device for alternating current comprising a transparent electrode layer on the second conductive semiconductor layer. The method of claim 3,
An electrode is formed on the first conductivity type semiconductor layer,
And the wiring line connects the transparent electrode layer of the light emitting cell adjacent to the electrode. The method of claim 1,
And an area of the light emitting cell in which the first and second pads are formed is larger than that of other light emitting cells. The method of claim 1,
And a current flow from the first pad to the second pad is mixed in a row direction and a column direction. The method of claim 1,
The light emitting chip is a light emitting device for AC, 16 light-emitting cells form the same size 4X4 matrix. The method of claim 1,
The wiring includes a contact area in contact with the transparent electrode layer,
And a plurality of light emitting cells include the contact areas of the same length. 9. The method of claim 8,
The light emitting device for alternating current having a shape different from each other in the contact area of the plurality of light emitting cells. The method of claim 1,
The driving voltage of the plurality of light emitting diodes constituting the light emitting chip satisfy the following equation.
V driving = V SOURCE / (mx L)
(V SOURCE is the maximum value of the AC power, m is the number of the light emitting device package connected in series, L is the number of light emitting diodes in one light emitting chip, V driving means a driving voltage for driving one of the light emitting diodes. .) The method of claim 10,
The drive voltage is AC light emitting device that satisfies 3.0 to 3.4V. The method of claim 1,
And a plurality of light emitting cells of the light emitting chip have different areas. The method of claim 12,
And the plurality of light emitting cells are arranged in a plurality of rows, and the number of the light emitting cells arranged in each light emitting cell column is different from each other.
KR1020110064413A 2011-06-30 2011-06-30 The light emitting device KR20130007213A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017119730A1 (en) * 2016-01-05 2017-07-13 엘지이노텍(주) Light emitting element
WO2021101318A1 (en) * 2019-11-20 2021-05-27 한국생산기술연구원 Wiring method for led mesh structure
KR20210061740A (en) * 2019-11-20 2021-05-28 한국생산기술연구원 LED mesh structure
US11794633B2 (en) 2020-05-22 2023-10-24 Samsung Electronics Co., Ltd. Light-emitting device and headlamp for vehicle including the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017119730A1 (en) * 2016-01-05 2017-07-13 엘지이노텍(주) Light emitting element
US10373938B2 (en) 2016-01-05 2019-08-06 Lg Innotek Co., Ltd. Light emitting element
WO2021101318A1 (en) * 2019-11-20 2021-05-27 한국생산기술연구원 Wiring method for led mesh structure
KR20210061740A (en) * 2019-11-20 2021-05-28 한국생산기술연구원 LED mesh structure
KR20210062125A (en) * 2019-11-20 2021-05-31 한국생산기술연구원 A wiring method of LED mesh structure
US11794633B2 (en) 2020-05-22 2023-10-24 Samsung Electronics Co., Ltd. Light-emitting device and headlamp for vehicle including the same

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