KR20120136574A - X-ray detector panel - Google Patents
X-ray detector panel Download PDFInfo
- Publication number
- KR20120136574A KR20120136574A KR1020110055583A KR20110055583A KR20120136574A KR 20120136574 A KR20120136574 A KR 20120136574A KR 1020110055583 A KR1020110055583 A KR 1020110055583A KR 20110055583 A KR20110055583 A KR 20110055583A KR 20120136574 A KR20120136574 A KR 20120136574A
- Authority
- KR
- South Korea
- Prior art keywords
- electrode
- source
- gate
- drain
- connection
- Prior art date
Links
- 239000002184 metal Substances 0.000 claims abstract description 28
- 230000003287 optical effect Effects 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 57
- 238000002161 passivation Methods 0.000 claims description 21
- 239000011241 protective layer Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 9
- 230000035515 penetration Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 16
- 239000010409 thin film Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 101150117627 bpl1 gene Proteins 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- -1 for example Substances 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002558 medical inspection Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
Abstract
The X-ray detector panel which reduces the influence of external noise includes a gate wiring, an active pattern, a metal pattern, an optical sensor unit, a data wiring and a bias wiring. In this case, the metal pattern includes a source electrode, a source connection electrode, a drain electrode, and a drain connection electrode. The source electrode includes a source channel portion formed on the active pattern, and a source connection portion connecting the source connection electrode and the source channel portion, and the drain electrode is a drain channel portion formed on the active pattern spaced apart to face the source channel portion, And a drain connection part connecting the drain connection electrode and the drain channel part. In this way, as the source electrode is composed of the source channel portion and the source connection portion to minimize the area, it is possible to minimize the penetration of external noise.
Description
The present invention relates to an x-ray detector panel, and more particularly, to an x-ray detector panel that can detect the X-rays and to photograph the inside of the object.
In general, X-rays have a short wavelength and can easily penetrate an object. The amount of X-rays transmitted is determined by the degree of compactness inside the object. That is, the internal state of the object may be indirectly observed through the transmission amount of the X-ray that has passed through the object.
The X-ray detector panel is a device for detecting the amount of transmission of the X-rays transmitted through the object. The X-ray detector panel detects the amount of transmission of the X-ray, and displays the internal state of the object to the outside through a display device. The X-ray detector may generally be used as a medical inspection device, a non-destructive inspection device, and the like.
The X-ray detector panel generally includes a PIN diode for sensing light applied from the outside, a thin film transistor electrically connected to the P-side electrode of the PIN diode, a gate wiring and a data wire electrically connected to the thin film transistor, and the PIN diode. And a bias wiring for applying a bias voltage to the N-side electrode of the.
The thin film transistor may include a gate electrode connected to the gate line, an active pattern overlapping the gate electrode, a source electrode protruding from the data wire, and overlapping a portion of the active pattern, and a portion of the active pattern spaced apart from the source electrode. And a drain electrode superimposed with and electrically connected to the P-side electrode. Here, external noise may be applied through the source electrode and the drain electrode to modify the sensing signal sensed by the PIN diode.
Accordingly, the present invention is to solve this problem, the problem to be solved by the present invention is to provide an X-ray detector panel that can minimize the external noise applied through the source electrode.
The X-ray detector panel according to the exemplary embodiment of the present invention includes a gate wiring, an active pattern, a metal pattern, an optical sensor unit, a data wiring, and a bias wiring. The gate wiring includes a gate main wiring extending in a first direction and a gate electrode branched from the gate main wiring. The active pattern is formed to overlap the gate electrode on the gate insulating layer covering the gate wiring. The metal pattern is formed on the gate insulating layer and includes a source electrode and a drain electrode. The optical sensor unit is formed on the first protective layer covering the metal pattern, and is electrically connected to the drain electrode through the drain contact hole formed in the first protective layer. The data line extends in a second direction crossing the first direction and is electrically connected to the source electrode. The bias wire is formed on a second protective layer covering the optical sensor unit and is electrically connected to the optical sensor unit through a P-side contact hole formed in the second protective layer. The source electrode may include a source channel part formed on the active pattern, and a source connection part connecting the data line and the source channel part, and the drain electrode may be spaced apart to face the source channel part. A drain channel portion formed on the pattern, and a drain connecting portion for connecting between the optical sensor portion and the drain channel portion.
The metal pattern may further include a source connection electrode connected to the source connection part and a drain connection electrode connected to the drain connection part. In this case, the data line is formed on the second passivation layer so as to overlap the source connection electrode, and is in electrical contact with the source connection electrode through a data contact hole formed over the first and second passivation layers. Is electrically connected to the source electrode. In addition, the optical sensor unit is electrically connected to the drain connection electrode through the drain contact hole to be electrically connected to the drain electrode.
The active pattern may have a shape extending in the longitudinal direction of the gate electrode. In this case, a portion of the active pattern may be formed to overlap the gate main wiring.
The source channel portion may have a shape extending in the length direction of the active pattern, and the drain channel portion may have a shape extending in the same length as the source channel portion in the length direction of the active pattern.
The source connection part may be connected to an upper end of the source channel part opposite to the gate main wiring and may be formed in parallel with the gate main wiring. In addition, the drain connection part may be formed in parallel with the gate main wiring.
A portion of the source channel portion may be formed to overlap the gate main wiring, and a portion of the drain channel portion may be formed to overlap the gate main wiring.
According to the X-ray detector panel, as the source electrode is composed of a source channel portion formed on the active pattern and a source connection portion connecting the source connection electrode and the source channel portion, the area of the source electrode is minimized to provide an external electrical The application of noise to the source electrode can be minimized.
In addition, the source connection part may be disposed to be spaced apart from the gate main wiring as much as possible to minimize the influence of the gate signal transmitted to the gate main wiring.
In addition, the source channel portion and the drain channel portion facing the source channel portion are formed to extend in the longitudinal direction of the active pattern, the width of the channel of the active pattern corresponding to the source channel portion and the source channel portion is widened Accordingly, the transmission efficiency of the signal transmitted through the channel of the active pattern can be further improved.
1 is a conceptual diagram illustrating a connection relationship between pads and wires in an X-ray detector panel according to an exemplary embodiment of the present invention.
FIG. 2 is an enlarged plan view of a part of the X-ray detector panel of FIG. 1.
3 is a cross-sectional view taken along line II ′ of FIG. 2.
4 is a cross-sectional view taken along the line II-II 'of FIG. 2.
FIG. 5 is an enlarged plan view of portion A of FIG. 2.
FIG. 6 is a plan view illustrating an embodiment in which the X-ray detector panel and the bias connection wiring of FIG. 2 are different.
FIG. 7 is a cross-sectional view taken along line III-III ′ of FIG. 6.
The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text.
It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. The terms first, second, etc. may be used to describe various elements, but the elements should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In the present application, the terms "comprising" or "having ", and the like, are intended to specify the presence of stated features, integers, steps, operations, elements, parts, or combinations thereof, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, parts, or combinations thereof.
In the drawings, the thickness of each device or film (layer) and regions has been exaggerated for clarity of the invention, and each device may have a variety of additional devices not described herein. When (layer) is mentioned as being located on another film (layer) or substrate, an additional film (layer) may be formed directly on or between the other film (layer) or substrate.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings.
1 is a conceptual diagram illustrating a connection relationship between pads and wires in an X-ray detector panel according to an exemplary embodiment of the present invention.
Referring to FIG. 1, the X-ray detector panel according to the present exemplary embodiment may include
The
The sensing pixels are disposed in a plurality of pixel regions formed in a matrix form by the
Each of the sensing pixels is electrically connected to one of the gate lines 20 to receive a gate signal, and is electrically connected to one of the
The gate pads GP are electrically connected to one ends of the gate lines 20, respectively. The gate pads GP are electrically connected to a gate IC (not shown) that generates the gate signals to receive the gate signals. The gate pads GP may have a predetermined number to form a plurality of gate pad blocks GPB, and one gate driving chip may be electrically connected to each of the gate pad blocks GPB. . Meanwhile, in the drawing, 16 gate pads GP are gathered by eight to form two gate pad blocks GPB. However, 3072 gate pads GP are gathered by 512 and six gate pads are formed. Blocks GPB may be formed.
The data pads DP are electrically connected to one ends of the
The bias pads BP may be disposed adjacent to the data pads DP. Specifically, the bias pads BP may be disposed on each side of each of the data pad blocks DPB. That is, one first bias pad BP1 may be disposed on the left side of each of the data pad blocks DPB, and one second bias pad BP2 may be disposed on the right side of each of the data pad blocks DPB. have. Here, each of the data pad blocks DPB and the first and second bias pads BP1 and BP2 disposed on both sides of each of the data pad blocks DPB may be electrically connected to one output driving chip. Can be.
The bias connection line BL is disposed between the
In the present exemplary embodiment, the first bias connection pad wirings BPL1 and the second bias connection pad wirings BPL2 may be disposed in the data pad blocks DPB parallel to the second direction D2. It may have a shape that is symmetrical with respect to the center line. In addition, the first and second bias connection pad lines BPL1 and BPL2 disposed adjacent to each other may be coupled to each other as shown in the figure to have a Y-shaped shape. Alternatively, the first and second bias connection pad lines BPL1 and BPL2 disposed adjacent to each other may be spaced apart from each other.
FIG. 2 is an enlarged plan view of a part of the X-ray detector panel of FIG. 1, FIG. 3 is a cross-sectional view taken along the line II ′ of FIG. 2, and FIG. 4 is a line along II-II ′ of FIG. 2. It is sectional drawing cut out, and FIG. 5 is the top view which expands and shows the A part of FIG.
2, 3, 4, and 5, the X-ray detector panel may include a
The
The
The
The
The
Each of the
The
The
Each of the
Each of the
The
The
Each of the
Meanwhile, the
The
The
Each of the N-
The
The
The
The
The
The
The P-side
Meanwhile, the N-
The
In addition, the
In addition, the
The
Each of the
Each of the
Each of the P-
Each of the
The
In the present embodiment, the
In addition, the
On the other hand, since the
The
The pad
The
The organic insulating
6 is a plan view illustrating an embodiment in which the X-ray detector panel and the bias connection wiring of FIG. 2 are different, and FIG. 7 is a cross-sectional view taken along line III-III ′ of FIG. 6.
6 and 7, the bias connection line BL is not formed on the first
Accordingly, the
In addition, each of the
As described above, according to the present exemplary embodiment, as the
In addition, the
In addition, the
In the detailed description of the present invention described above with reference to the preferred embodiments of the present invention, those skilled in the art or those skilled in the art having ordinary skill in the art will be described in the claims to be described later It will be understood that various modifications and variations can be made in the present invention without departing from the scope of the present invention.
TFT: thin film transistor GP: gate pad
GPB: Gate Pad Block DP: Data Pad
DPB: Data Pad Block BP: Bias Pad
BP1, BP2: first bias pad, second bias pad
BL: Bias connection main wiring BML: Bias connection main wiring
BML1, BML2: 1st bias connection pad wiring, 2nd bias connection pad wiring
10
22: gate main wiring 24: gate electrode
26: gate pad connection electrode 30: gate insulating layer
40: active pattern 50: first metal pattern
52:
52b: source connection 54: source connection electrode
56
56b: drain connection 58: drain connection electrode
60: first protective layer 62: gate pad connection hole
64: drain contact hole 70: second metal pattern
70L: second metal layer 72: N-side electrode
74: gate pad electrode 76: data pad electrode
78: bias pad electrode 80: PIN diode
80L: PIN diode layer 82: N-type semiconductor pattern
84: intrinsic semiconductor pattern 86: P-type semiconductor pattern
90: P-side transparent electrode 100: second protective layer
101: P side contact hole 102: data contact hole
103: data pad connection hole 104: bias connection hole
105: gate pad hole 106: data pad hole
107: bias pad hole 110: third metal pattern
112: data wiring 112a: data main wiring
112b:
114:
114b:
114d:
120: third protective layer 130: pad transparent electrode pattern
132: gate pad transparent electrode 134: data pad transparent electrode
136: bias pad transparent electrode 140: organic insulating layer
66: bias pad connection hole
Claims (8)
An active pattern formed on the gate insulating layer covering the gate wiring so as to overlap the gate electrode;
A metal pattern formed on the gate insulating layer and including a source electrode and a drain electrode;
An optical sensor unit formed on the first protective layer covering the metal pattern and electrically connected to the drain electrode through a drain contact hole formed in the first protective layer;
A data line extending in a second direction crossing the first direction and electrically connected to the source electrode; And
A bias wire formed on a second protective layer covering the optical sensor unit and electrically connected to the optical sensor unit through a P-side contact hole formed in the second protective layer,
The source electrode may include a source channel part formed on the active pattern, and a source connection part connecting the data line and the source channel part.
The drain electrode may include a drain channel part spaced apart from the source channel part so as to face the source channel part, and a drain connection part connecting the optical sensor part and the drain channel part.
The data line is formed on the second passivation layer so as to overlap the source connection electrode, and is in electrical contact with the source connection electrode through a data contact hole formed over the first and second passivation layers. Electrically connected to the
And the optical sensor unit is in electrical contact with the drain connection electrode through the drain contact hole and electrically connected to the drain electrode.
The X-ray detector panel having a shape extending in the longitudinal direction of the gate electrode.
And an X-ray detector panel formed to overlap the gate main wiring.
The drain channel unit has a shape extending in the same length as the source channel portion in the longitudinal direction of the active pattern.
An X-ray detector panel connected to an upper end of the source channel part opposite to the gate main wiring and formed in parallel with the gate main wiring.
And an X-ray detector panel formed in parallel with the gate main wiring.
A portion of the drain channel portion is formed to overlap with the gate main wiring line.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110055583A KR20120136574A (en) | 2011-06-09 | 2011-06-09 | X-ray detector panel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110055583A KR20120136574A (en) | 2011-06-09 | 2011-06-09 | X-ray detector panel |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20120136574A true KR20120136574A (en) | 2012-12-20 |
Family
ID=47903927
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020110055583A KR20120136574A (en) | 2011-06-09 | 2011-06-09 | X-ray detector panel |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20120136574A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106461801A (en) * | 2014-01-27 | 2017-02-22 | Epica国际有限公司 | Radiological imaging device with improved functioning |
KR20190079355A (en) * | 2017-12-27 | 2019-07-05 | 엘지디스플레이 주식회사 | X-ray detector |
KR20200082120A (en) * | 2018-12-28 | 2020-07-08 | 엘지디스플레이 주식회사 | Pixel array panel and digital x-ray detector comprising the same |
-
2011
- 2011-06-09 KR KR1020110055583A patent/KR20120136574A/en active IP Right Grant
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106461801A (en) * | 2014-01-27 | 2017-02-22 | Epica国际有限公司 | Radiological imaging device with improved functioning |
CN106461801B (en) * | 2014-01-27 | 2020-06-23 | Epica国际有限公司 | Radiation imaging apparatus with improved functionality |
KR20190079355A (en) * | 2017-12-27 | 2019-07-05 | 엘지디스플레이 주식회사 | X-ray detector |
CN109994495A (en) * | 2017-12-27 | 2019-07-09 | 乐金显示有限公司 | X-ray detector |
KR20200082120A (en) * | 2018-12-28 | 2020-07-08 | 엘지디스플레이 주식회사 | Pixel array panel and digital x-ray detector comprising the same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106716642B (en) | Display device having divided wiring patterns | |
CN107004774B (en) | Flexible display apparatus with corrosion-resistant printed circuit film | |
CN106935628B (en) | Flexible organic light emitting diode display device | |
CN106796949B (en) | Flexible display apparatus | |
CN107006088B (en) | Flexible display apparatus with a variety of micro- coatings | |
KR102511543B1 (en) | Display device | |
US10347863B2 (en) | Organic light-emitting display device | |
KR101469042B1 (en) | X-ray detecting panel and x-ray detector | |
KR102477983B1 (en) | Display device | |
CN107004617A (en) | Flexible display apparatus with bridge joint wiring track | |
KR102402597B1 (en) | Display device | |
KR20200047933A (en) | Display device | |
KR20110087856A (en) | X-ray detector | |
JPWO2019064342A1 (en) | Display device, display device manufacturing method, and display device manufacturing apparatus | |
KR20120136574A (en) | X-ray detector panel | |
KR20110070473A (en) | X-ray detector | |
KR20120136576A (en) | X-ray detector panel | |
KR20120136570A (en) | X-ray detector panel and method for manufacturing the x-ray detector panel | |
KR20180001978A (en) | Circuit board and display device including the same | |
CN112640578A (en) | Display device and method for manufacturing display device | |
KR102463349B1 (en) | Display device | |
KR101033439B1 (en) | X-ray detector | |
KR20120095543A (en) | X-ray detector panel and method for manufacturing the panel | |
KR101956917B1 (en) | Touch sensing device integrated type organic light emitting diodde desplay | |
KR20120136573A (en) | X-ray detector panel |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right |