KR20120136217A - Optical device and method for the same - Google Patents

Optical device and method for the same Download PDF

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Publication number
KR20120136217A
KR20120136217A KR1020110055294A KR20110055294A KR20120136217A KR 20120136217 A KR20120136217 A KR 20120136217A KR 1020110055294 A KR1020110055294 A KR 1020110055294A KR 20110055294 A KR20110055294 A KR 20110055294A KR 20120136217 A KR20120136217 A KR 20120136217A
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KR
South Korea
Prior art keywords
powder
reflective surface
sic
optical device
base material
Prior art date
Application number
KR1020110055294A
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Korean (ko)
Inventor
황금찬
김민성
김명정
Original Assignee
엘지이노텍 주식회사
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Priority to KR1020110055294A priority Critical patent/KR20120136217A/en
Publication of KR20120136217A publication Critical patent/KR20120136217A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B13/00—Machines or devices designed for grinding or polishing optical surfaces on lenses or surfaces of similar shape on other work; Accessories therefor
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0808—Mirrors having a single reflecting layer

Abstract

PURPOSE: An optical device and a manufacturing method thereof are provided to be affected less by the decrease of vacuum level and bad influence caused from impurities by including a parent material and a reflective surface consisting of silicon carbide(SiC). CONSTITUTION: A purity of parent materials(100) are between 99.999% and 99.9999999%. The top of the parent material includes a reflective surface(200) which reflects incoming rays. The parent material and the reflective surface consist of silicon carbide(SiC).

Description

Optical device and its manufacturing method {OPTICAL DEVICE AND METHOD FOR THE SAME}

The present disclosure relates to an optical device and a method of manufacturing the same.

Silicon carbide (SiC) is a composite material and is the most important carbide in the field of ceramics. Silicon carbide has a β phase having a cubic crystal structure and an α phase having a hexagonal crystal structure. The β phase is stable in the temperature range of 1400-1800 ° C., and the α phase is formed at 2000 ° C. or higher. The molecular weight of SiC is 40.1, specific gravity is 3.21, and it decomposes at 2500 degreeC or more. SiC has been attracting attention as a high-temperature structural material because of its high temperature strength, abrasion resistance, oxidation resistance, corrosion resistance, creep resistance, etc. It is a material that receives. In addition, it is a high-grade ceramic material widely used in mechanical seals, bearings, various nozzles, high temperature cutting tools, fireproof plates, abrasives, reducing materials in steelmaking, and lightning arresters.

In particular, due to the properties of the SiC, it can be applied to optical reflecting mirrors.

The embodiment seeks to provide a high quality optical device.

Optical device according to the embodiment, the base material consisting of 99.999% to 99.9999999% purity; And the upper surface of the base material includes a reflective surface for reflecting the incident light.

An optical device manufacturing method according to the embodiment comprises the steps of preparing silicon carbide powder; Sintering the powder to prepare a sintered body; And polishing one surface of the sintered body to form a reflective surface.

The optical device according to the embodiment includes a base material and a reflecting surface, and the purity of the base material is 99.999% to 99.9999999%, and may be configured with ultra high purity. Therefore, it is possible to reduce the degree of vacuum in the manufacturing apparatus due to impurities or to adversely affect the impurities.

The reflective surface may be directly provided on the upper surface of the base material. Thus, a separate layer for the reflective surface can be omitted and the process can be simplified. In addition, the cost can be reduced. In addition, there is no risk that the reflective surface is peeled off.

The reflective surface may include the same material as the base material. Since the coefficient of thermal expansion of the reflective surface and the base material is the same, there is no fear of peeling or deformation of the reflective surface. In addition, the reflectance of the reflective surface can be increased.

In the optical device manufacturing method according to the embodiment, powder having a small particle size is used. Since the particle diameter of the powder is small, when the powder is sintered, there are very few pores contained in the sintered body. Therefore, the amount of gas adsorbed to the pores can be reduced. Through this, the gas adsorbed in the pores can be released during the use of the optical device, thereby reducing the possibility of lowering the degree of vacuum around. In addition, deformation of the optical device can be prevented due to unevenness of the temperature during use of the optical device. Thereby, the lifetime of the said optical apparatus can be extended.

1 is a perspective view of an optical device according to an embodiment.
2 is a cross-sectional view taken along the line A-A 'in Fig.
3 is a process flowchart of the optical device manufacturing method according to the embodiment.

In the description of embodiments, each layer, region, pattern, or structure may be “on” or “under” the substrate, each layer, region, pad, or pattern. Substrate formed in ”includes all formed directly or through another layer. Criteria for the top / bottom or bottom / bottom of each layer will be described with reference to the drawings.

The thickness or the size of each layer (film), region, pattern or structure in the drawings may be modified for clarity and convenience of explanation, and thus does not entirely reflect the actual size.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 and 2, an optical apparatus according to an embodiment will be described in detail. 1 is a perspective view of an optical device according to an embodiment. FIG. 2 is a cross-sectional view illustrating a cross section taken along line AA ′ of FIG. 1.

1 and 2, the optical device according to the embodiment includes a base material 100 and a reflective surface 200.

The base material 100 may be composed of 99.999% to 99.9999999% purity. The base material 100 may include silicon carbide (SiC). That is, the base material 100 may include SiC having a purity of 99.999% to 99.9999999%.

The SiC is a light weight material, and has a high mechanical strength and stable material from room temperature to high temperature. Moreover, it has little thermal expansion, good thermal conductivity, and good corrosion resistance. In addition, there is an advantage that the hardness is high and the wear resistance is excellent. The mirror for optical reflection using such SiC is used a lot.

The reflecting mirror can be used in a semiconductor manufacturing apparatus or a liquid crystal manufacturing apparatus. The reflecting mirror may be guided to reflect the emitted light, visible light or X-ray to measure the properties.

The reflecting mirror should be able to withstand the atmosphere without affecting the atmosphere in the manufacturing apparatus in which the reflecting mirror is used.

In this embodiment, the purity of the base material 100 is 99.999% to 99.9999999%, it may be configured with ultra high purity. Therefore, it is possible to reduce the degree of vacuum in the manufacturing apparatus due to impurities or to adversely affect the impurities.

The reflective surface 200 is provided on one surface of the base material 100. The reflective surface 200 may be provided on an upper surface of the base material 100. In this embodiment, the reflective surface 200 may be formed directly on the base material 100 without a separate layer. That is, the reflective surface 200 may be directly provided on the upper surface of the base material 100. Thus, a separate layer for the reflective surface 200 can be omitted, and the process can be simplified. You can also save money. In addition, there is no risk that the reflective surface 200 is peeled off.

The reflective surface 200 may reflect incident light.

The reflective surface 200 may include the same material as the base material 100. That is, the reflective surface 200 may include SiC. Since the thermal expansion coefficients of the reflective surface 200 and the base material 100 are the same, there is no fear of peeling or deformation of the reflective surface 200. In addition, the reflectance of the reflective surface 200 may be increased.

Conventionally, the materials included in the reflective surface 200 and the base material 100 are different, and there is a difference in the coefficient of thermal expansion, thereby causing the problem that the reflective surface 200 is peeled off or deformed.

Hereinafter, an optical device manufacturing method according to an embodiment will be described with reference to FIG. 3. For the purpose of clarity and simplicity, detailed description of parts identical or similar to those described above will be omitted.

3 is a process flowchart of the optical device manufacturing method according to the embodiment.

Referring to FIG. 3, the optical device manufacturing method according to the embodiment includes preparing a powder (ST100), preparing a sintered body (ST200), and forming a reflective surface (ST300).

In preparing the powder (ST100), SiC powder may be prepared. In particular, the purity of the SiC powder may be 99.999% to 99.9999999%.

As a method for obtaining the SiC powder, there is an Acheson method, a carbon-thermal reduction method, a direct carbonization method, a liquid phase polymer pyrolysis method, and a high temperature auto combustion synthesis method.

The above-described techniques produce silicon carbide by heat treatment at 1350 ° C. to 2000 ° C. by mixing a solid silicon source such as SiO 2 , Si, and a carbon or graphite type carbon source.

In particular, the method of obtaining high purity silicon carbide powder is typical of carbon thermal reduction method and liquid phase polymer pyrolysis method.

For example, the ultra-high purity SiC powder may be obtained through the following process. First, the step of mixing the SiO powder and the carbon source in the mixer may be a step to produce a silicon carbide raw material mixture. The carbon source may be carbon black. In addition, the mixing ratio of carbon to silicon may be 1.3 or more and 1.8 or less.

Subsequently, the mixture is heat-treated at a temperature of 1300 ° C. or more and 1400 ° C. or less for 30 minutes or more and 7 hours or less to obtain SiC powder. Here, the material of the crucible is graphite, it can be filled with a vacuum or an inert gas in the interior space.

However, the embodiment is not limited thereto, and various methods for obtaining the ultrapure SiC powder may be used.

Subsequently, in the preparing of the powder (ST100), the particle size of the powder may be 0.05 um to 3 um. If the particle diameter of the powder is less than 0.05 um, it may be difficult to handle the powder. As a result, when the powder is subsequently sintered, it may be difficult to achieve sufficient densification. In addition, molding and processing can be difficult. When the particle size of the powder exceeds 3 um, sintering by hot press may be difficult and it may be difficult to obtain a desired substrate strength and density.

Since the particle diameter of the powder is small, when the powder is sintered, there are very few pores contained in the sintered body. Therefore, the amount of gas adsorbed to the pores can be reduced. Through this, the gas adsorbed in the pores can be released during the use of the optical device, thereby reducing the possibility of lowering the degree of vacuum around. In addition, deformation of the optical device can be prevented due to unevenness of the temperature during use of the optical device. Thereby, the lifetime of the said optical apparatus can be extended.

Subsequently, the powder is sintered to prepare a sintered body (ST200). The preparing of the sintered compact (ST200) may further include mixing a resin with the powder. That is, the resin may be mixed with the powder and sintered. Here, the resin may include carbon. For example, the resin may be a phenol resin, polyvinyl alcohol, an acrylic polymer, or the like.

In addition, the step of preparing the sintered body (ST200) may be made at a temperature of 2000 ℃ to 2400 ℃.

Specifically, the resin is mixed with the powder, which is placed in a graphite mold. Subsequently, firing may be performed at a temperature of 2300 ° C. and an inert atmosphere while applying a pressure of about 40 kg / cm 3 or more. Through this, a sintered compact can be obtained.

Subsequently, in the forming of the reflective surface (ST300), one surface of the sintered body may be polished. In the forming of the reflective surface (ST300), a diamond abrasive may be used.

In this embodiment, since a separate layer is not provided to provide the reflective surface, the manufacturing process can be simplified.

Hereinafter, the present invention will be described in more detail with reference to Examples. However, the examples are only for illustrating the present invention, and the present invention is not limited thereto.

Example

The resin was mixed in a fine SiC powder having a purity of 99.9997% or more and a particle diameter of 0.7 um to 1.5 um or less and placed in a graphite mold. The SiC sintered compact was obtained by baking in 2300 degreeC temperature and inert atmosphere, adding 40 kg / cm < 2 > pressure here. The size of this sintered compact is cylindrical of 60 mm in diameter and 10 mm in height. Next, one surface of the SiC sintered body was polished using a diamond abrasive.

Comparative Example 1

A SiC sintered body was produced in the same manner as in Example, except that SiC powder having a purity of 99.8% and a particle size of 1 μm was used. The size of this SiC sintered body is a cube of 40 mm X 150 mm X 300 mm.

Comparative Example 2

A SiC sintered body was produced in the same manner as in Example, except that SiC powder having a purity of 99.2% and a particle size of 4 um was used and no sintering aid was added.

For Example, Comparative Example 1, and Comparative Example 2, the SiC content, density, and gas emission amount were measured, and the results are shown in Table 1. Here, the gas discharge amount is measured under high temperature and high vacuum of 1000 ℃, 10 Torr to 5 Torr.

Example Comparative Example 1 Comparative Example 2 SiC content (wt%) 99.9993 99.8 99.2 Density (g / cm 3 ) 3.07 3.15 2.62 Gas discharge amount (ml / 100g) 0.7 2.0 2.7

Referring to Table 1, it can be seen that the amount of gas released in the examples is considerably less, 0.7 ml per 100 g. In Comparative Example 1, since the purity of the SiC powder was low, the SiC content was lower but the density was higher than that of the above example. This is because an impurity contained in Comparative Example 1 served as an additive. In addition, the amount of gas released was large due to the impurities present in the sintered body. In Comparative Example 2, since the particle size of the SiC powder was large at 4 μm, the SiC content was lower and the density was lower than that of the above Example. This means that the porosity of a sintered compact is high compared with the said Example. Due to such a high porosity, there are many gases adsorbed in the pores, resulting in a large amount of gas discharged.

The features, structures, effects and the like described in the foregoing embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. In addition, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be construed as limiting the scope of the present invention. It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments may be modified. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

Claims (8)

A base material having a purity of 99.999% to 99.9999999%; And
The upper surface of the base material includes a reflecting surface for reflecting incident light. The method of claim 1,
The base material and the reflecting surface comprises silicon carbide (SiC). Preparing silicon carbide powder;
Sintering the powder to prepare a sintered body; And
And polishing a surface of the sintered body to form a reflective surface. The method of claim 3,
In the preparing of the powder, the purity of the powder is 99.999% to 99.9999999%. The method of claim 3,
In the preparing of the powder, the particle size of the powder is 0.05 um to 3 um optical device manufacturing method. The method of claim 3,
Preparing the sintered body further comprises the step of mixing a resin to the powder. The method according to claim 6,
And said resin comprises carbon. The method of claim 3,
Preparing the sintered body is an optical device manufacturing method made at a temperature of 2000 ℃ to 2400 ℃.
KR1020110055294A 2011-06-08 2011-06-08 Optical device and method for the same KR20120136217A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3197845A4 (en) * 2014-09-25 2018-09-12 Pallidus, Inc. High purity polysilocarb derived silicon carbide materials, applications and processes
US10322974B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
US10597794B2 (en) 2013-05-02 2020-03-24 Pallidus, Inc. High purity polymer derived 3C SiC, methods compositions and applications
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10322974B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
US10597794B2 (en) 2013-05-02 2020-03-24 Pallidus, Inc. High purity polymer derived 3C SiC, methods compositions and applications
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
EP3197845A4 (en) * 2014-09-25 2018-09-12 Pallidus, Inc. High purity polysilocarb derived silicon carbide materials, applications and processes

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