KR20120129925A - Method for manufacturing display device - Google Patents
Method for manufacturing display device Download PDFInfo
- Publication number
- KR20120129925A KR20120129925A KR1020127022178A KR20127022178A KR20120129925A KR 20120129925 A KR20120129925 A KR 20120129925A KR 1020127022178 A KR1020127022178 A KR 1020127022178A KR 20127022178 A KR20127022178 A KR 20127022178A KR 20120129925 A KR20120129925 A KR 20120129925A
- Authority
- KR
- South Korea
- Prior art keywords
- glass substrate
- display device
- glass
- film
- conductive polymer
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
- C03C17/32—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with synthetic or natural resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2204/00—Glasses, glazes or enamels with special properties
- C03C2204/08—Glass having a rough surface
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/31—Pre-treatment
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/02—Materials and properties organic material
- G02F2202/022—Materials and properties organic material polymeric
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/16—Materials and properties conductive
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/22—Antistatic materials or arrangements
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Liquid Crystal (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Surface Treatment Of Glass (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
스퍼터링법을 사용하지 않고, 글래스 기판에 도전막을 설치하는 표시장치의 제조방법을 제공한다. 표시장치용 글래스 기판의 표면에 에칭액을 접촉하여, 글래스 표면의 산술 평균 조도(Ra)를 0.7nm ~ 70nm로 설정하는 화학 연마 공정과, 화학 연마 공정 후의 글래스 표면에 도전성 폴리머를 도포하여, 400 ~ 1200Ω/sq의 도전막을 형성하는 막 형성 공정을 구비하고, 막 형성 공정 후 글래스 기판의 전광선 투과율을, 판 두께 0.5mm의 글래스 기판에 대하여 87% 이상으로 한다.Provided is a method of manufacturing a display device in which a conductive film is provided on a glass substrate without using a sputtering method. The conductive polymer is applied to the surface of the glass after the chemical polishing step and the chemical polishing step of bringing the etching solution into contact with the surface of the glass substrate for display device to set the arithmetic mean roughness Ra of the glass surface to 0.7 nm to 70 nm. A film forming step of forming a conductive film of 1200 mW / sq is provided, and the total light transmittance of the glass substrate after the film forming step is 87% or more with respect to the glass substrate having a plate thickness of 0.5 mm.
Description
본 발명은, 글래스 기판의 표면에 투광성 도전막을 설치한 표시장치의 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a display device in which a light transmissive conductive film is provided on a surface of a glass substrate.
액정표시장치는, 한 쌍의 글래스 기판으로 구성된 맞대어 붙인 글래스 기판의 사이에, 액정을 봉입하여 구성되어 있다. 그리고, 글래스 기판에 정전기가 대전하면, 액정의 표시 동작에 악영향을 주기 때문에, 글래스 기판의 표면에 도전막을 설치함으로써 대전을 방지하는 구성이 알려져 있다(예를 들면, 특허문헌 1).The liquid crystal display device is constructed by enclosing a liquid crystal between abutted glass substrates constituted by a pair of glass substrates. And when static electricity charges a glass substrate, since it adversely affects the display operation of a liquid crystal, the structure which prevents electrification by providing a conductive film on the surface of a glass substrate is known (for example, patent document 1).
여기서, 도전막으로서는, 일반적으로, 산화 인듐 주석(ITO:Indium Tin Oxide)이 사용되며, 투명전극은 스퍼터링법에 의해 막으로 형성되어 있다.In general, indium tin oxide (ITO) is used as the conductive film, and the transparent electrode is formed of a film by sputtering.
[선행기술문헌][Prior Art Literature]
[특허문헌][Patent Literature]
특허문헌 1 : 특개평 8-241626Patent Document 1: Japanese Patent Application Laid-Open No. 8-241626
그러나, ITO를 구성하는 인듐이 희소금속일 뿐만 아니라, 스퍼터링법을 채용하는 한, 타켓재(ITO)로 적지않은 폐재(廢材)가 생긴다고 하는 문제가 있다.However, as long as the indium constituting ITO is not only a rare metal, but also a sputtering method is adopted, there is a problem that a considerable amount of waste is produced as the target material (ITO).
여기서, 사용자쪽으로 노출되는 노출측 글래스 기판 표면의 대전 방지막에 있어서는, 투명전극 정도의 낮은 저항율이 요구되지 않고, 대전을 방지할 수 있을 정도로 도전성을 발휘하면 족한 것으로 해석된다.Here, in the antistatic film on the surface of the exposed glass substrate exposed to the user, a low resistivity similar to that of the transparent electrode is not required, and it is interpreted as sufficient if the electrical conductivity is exhibited to the extent that the charging can be prevented.
본 발명은, 상기 문제점을 감안하여 이루어진 것으로, 스퍼터링법을 사용하지 않고, 글래스 기판에 도전막을 설치하는 표시장치의 제조방법을 제공하는 것을 목적으로 한다.The present invention has been made in view of the above problems, and an object thereof is to provide a method of manufacturing a display device in which a conductive film is provided on a glass substrate without using a sputtering method.
상기 목적을 달성하기 위하여, 본 발명에 의한 표시장치의 제조방법은, 표시장치용 글래스 기판의 표면에 에칭액을 접촉시켜, 글래스 표면의 산술 평균 조도(Ra)를 0.7nm ~ 70nm로 설정하는 화학 연마 공정과, 화학 연마 공정 후 글래스 표면에 도전성 폴리머를 도포하여, 400 ~ 1200Ω/sq의 도전막을 형성하는 막 형성 공정을 구비하고, 막 형성 공정 후 글래스 기판의 전광선(全光線) 투과율을, 판 두께 0.5mm의 글래스 기판에 대하여 87% 이상으로 하는 것을 특징으로 한다.In order to achieve the above object, in the method of manufacturing a display device according to the present invention, an etching solution is brought into contact with a surface of a glass substrate for a display device, and chemical polishing is performed to set the arithmetic mean roughness Ra of the glass surface to 0.7 nm to 70 nm. And a film forming step of applying a conductive polymer to the glass surface after the chemical polishing step to form a conductive film of 400 to 1200 kW / sq, and measuring the total light transmittance of the glass substrate after the film forming step. It is characterized by setting it as 87% or more with respect to a 0.5 mm glass substrate.
본 발명에서는, 화학 연마 공정에 있어서, 글래스 표면의 산술 평균 조도(Ra)를 0.7nm ~ 70nm로 설정하므로, 도전성 폴리머와의 확실한 접착성을 달성할 수 있다. 이에 대하여, Ra<0.7nm로서, 글래스 표면이 지나치게 평탄하면, 도전성 폴리머에 의한 도전막의 접착성이 열화하여, 밀착 시험에서 에타놀 등으로 용이하게 벗겨지는 결점이 발생한다. 한편, Ra>70nm로서, 글래스 표면이 지나치게 거칠면, 표시장치로서 선명한 표시 특성을 유지할 수 없다.In the present invention, since the arithmetic mean roughness Ra of the glass surface is set to 0.7 nm to 70 nm in the chemical polishing step, reliable adhesion with the conductive polymer can be achieved. On the other hand, if Ra <0.7nm, the glass surface is too flat, the adhesiveness of the electrically conductive film by a conductive polymer will deteriorate, and the fault which peels off easily with ethanol etc. in an adhesion test arises. On the other hand, when Ra> 70 nm and the glass surface is too rough, clear display characteristics cannot be maintained as a display device.
또한, 본 발명의 막 형성 공정에서는, 글래스 표면에 도전성 폴리머을 도포하여, 400 ~ 1200Ω/sq의 도전막을 형성한다. 여기서, 저항율은, 체적 저항율(Volume Resistivity : Ω?cm)이 아닌, 단위면적(cm2) 당 표면 저항율(Surface Resistivity : Ω/sq) = 체적 저항율/막 두께이다. 액정표시장치 등의 투명전극의 경우는, 5 ~ 40Ω/sq 정도의 표면 저항값이 요구되지만, 대전방지 용도로는, 400 ~ 1200Ω/sq로도 충분한다. 단, 바람직하게는, 막 형성 공정 후의 글래스 기판이, 1000Ω/sq 이하의 표면 저항율로 설정된다.Moreover, in the film formation process of this invention, a conductive polymer is apply | coated to the glass surface, and the electrically conductive film of 400-1200 GPa / sq is formed. Here, the resistivity is not a volume resistivity (Volume cm) but a surface resistivity (cm / sq) = volume resistivity / film thickness per unit area (cm 2 ). In the case of a transparent electrode such as a liquid crystal display device, a surface resistance value of about 5 to 40 kW / sq is required, but 400 to 1200 kW / sq is sufficient for antistatic applications. However, preferably, the glass substrate after a film formation process is set to the surface resistivity of 1000 Pa / sq or less.
본 발명에서는, 막 형성 공정 후 글래스 기판의 HAZE율이, 판 두께 0.5mm의 글래스 기판으로 평가하여 1.5% 미만으로 설정되는 것이 바람직하다. 여기서, HAZE율은, 확산 투과율/전광 투과율×100을 의미하며, JISK 7136에 기초하여 특정되는 값이다.In this invention, it is preferable that the HAZE rate of a glass substrate after a film formation process is set to less than 1.5% evaluated by the glass substrate of 0.5 mm of plate | board thickness. Here, HAZE rate means diffusion transmittance / total light transmittance x 100, and is a value specified based on JISK 7136.
일반적으로, 도전막의 막 두께가 두꺼울수록, 표면 저항율이 낮아져 도전성이 높아지나, 그 반면, HAZE율이 증가하여 투명성이 낮아진다. 그래서, 이 점을 고려하여, 도전성 폴리머의 막 두께는, 바람직하게는, 100nm ~ 250nm로 설정된다.In general, the thicker the film thickness of the conductive film, the lower the surface resistivity and the higher the conductivity. On the other hand, the HAZE rate is increased and the transparency is lowered. Therefore, in consideration of this point, the film thickness of the conductive polymer is preferably set to 100 nm to 250 nm.
본 발명의 글래스 기판은, 무알칼리 글래스로 구성되는 것이 바람직하지만, 보다 바람직하게는, 알루미노 규산염 글래스로 구성해야 한다. 또한, 도전성 폴리머로서는, 폴리아세틸렌, 폴리티오펜류 등이 적절하게 사용되지만, 보다 바람직하게는, 폴리티오펜계 도전성 폴리머를 사용해야 한다.Although it is preferable that the glass substrate of this invention is comprised with the alkali free glass, More preferably, it is necessary to comprise the alumino silicate glass. Moreover, although polyacetylene, polythiophene, etc. are used suitably as a conductive polymer, More preferably, a polythiophene type conductive polymer should be used.
본 발명의 에칭액은, 글래스 표면이 적당히 거칠어지는 조성이면 특별히 한정되지 않지만, 바람직하게는, 0.5 ~ 3중량%의 불화수소산, 0 ~ 10중량%의 염산, 0 ~ 5중량%의 황산을 함유하여 구성된다.The etching solution of the present invention is not particularly limited as long as the glass surface is appropriately roughened, but preferably contains 0.5 to 3% by weight of hydrofluoric acid, 0 to 10% by weight of hydrochloric acid, and 0 to 5% by weight of sulfuric acid. It is composed.
한편, 본 발명의 표시장치는, 바람직하게는, 액정표시장치이고, 도전성 폴리머는, 맞대어 붙인 글래스 기판의 노출측 표면에 막으로 형성된다.On the other hand, the display device of the present invention is preferably a liquid crystal display device, and the conductive polymer is formed of a film on the exposed side surface of the butted glass substrate.
이상 설명한 본 발명에 의하면, 스퍼터링법을 사용하지 않고, 글래스 기판에 도전막을 형성하는 것이 가능하여, 대전 방지막을 염가로 형성할 수 있다.According to the present invention described above, the conductive film can be formed on the glass substrate without using the sputtering method, and the antistatic film can be formed at low cost.
이하, 실시예를 설명하지만, 특히 본 발명을 한정하는 것은 아니다.Hereinafter, although an Example is described, it does not specifically limit this invention.
<공시 글래스><Notice glass>
100mm×100mm×0.6mm의 알루미노 규산염 글래스의 글래스 기판을 여러장 준비한다.Several glass substrates of aluminosilicate glass of 100 mm x 100 mm x 0.6 mm are prepared.
<작업순서><Work order>
(1) 각 글래스 판을 물로 세척하고, 에칭액으로 화학 연마하였다. 여기서, 에칭액으로서, 각종의 조성을 준비하고, 연마 시간도 적절하게 변경하였다.(1) Each glass plate was washed with water and chemically polished with an etching solution. Here, as the etching solution, various compositions were prepared, and the polishing time was also changed appropriately.
(2) 각 글래스 판을 물로 세척한 후, IPA(이소프로필알콜)에 침적하여 치환 처리를 행하고, 드라이어로 건조시켰다.(2) After each glass plate was washed with water, it was immersed in IPA (isopropyl alcohol), substituted, and dried with the dryer.
(3) 폴리티오펜계 도전성 폴리머인 세플지다(seplegyda)(신에츠(信越) 폴리머)를 글래스 판의 표면에 도포하였다. 심선 No6, No8, No10의 바코터(Bar coater)를 사용하여, 120nm, 160nm, 200nm 정도의 막 두께로 도포한 3 그룹을 생성하였다.(3) A seplegyda (Shin-Etsu polymer) which is a polythiophene-based conductive polymer was applied to the surface of the glass plate. Using a bar coater of core wires No6, No8, and No10, three groups coated with a film thickness of about 120 nm, 160 nm, and 200 nm were produced.
(4) 도전성 폴리머 도포 후의 건조는, 건조로에서 150℃로 10분간 실행하였다.(4) Drying after electroconductive polymer application was performed at 150 degreeC for 10 minutes in the drying furnace.
<결과 평가><Evaluation of results>
(1) 밀착시험(1) adhesion test
건조시킨 글래스 판에 대하여, 셀로판 테이프를 사용하여 박리시험을 실시함과 함께, 각 글래스 판의 화학 연마 후의 산술 평균 조도(Ra)와의 관계를 검증하였다.About the dried glass plate, the peeling test was performed using the cellophane tape, and the relationship with the arithmetic mean roughness Ra after the chemical polishing of each glass plate was verified.
그 결과, 산술 평균 조도 Ra = 0.7nm ~ 70nm 정도이면, 글래스와 도전막의 밀착성이 유지되는 것을 확인하였다.As a result, it was confirmed that the adhesion between the glass and the conductive film was maintained when the arithmetic mean roughness Ra was about 0.7 nm to 70 nm.
한편, 에칭액의 조성과, 연마 시간이 변하면, 화학 연마 후의 글래스 판의 산술 평균 조도(Ra)가 변화하고, 일반적으로, 연마 시간이 길수록, 또한, 불화수소산 농도가 진할수록 산술 평균 조도(Ra)가 증가한다.On the other hand, when the composition of the etching solution and the polishing time change, the arithmetic mean roughness Ra of the glass plate after chemical polishing changes, and in general, the longer the polishing time and the higher the hydrofluoric acid concentration, the arithmetic mean roughness Ra becomes Increases.
그래서, 이상의 경향과, 작업성을 고려하면, 0.5 ~ 3중량%의 불화수소산, 0 ~ 10중량%의 염산, 0 ~ 5중량%의 황산, 나머지 물로 이루어진 에칭액을 사용하여, 수분간(1 ~ 2분)의 화학 연마 공정에서, 글래스 표면을 5㎛(편면 2.5㎛) 정도 에칭하는 것이 적절한 것을 발견하였다.Therefore, in view of the above tendency and workability, the etching solution consisting of 0.5 to 3% by weight of hydrofluoric acid, 0 to 10% by weight of hydrochloric acid, 0 to 5% by weight of sulfuric acid, and the remaining water is used for several minutes (1 to 1%). In the chemical polishing process of 2 minutes), it was found that etching of the glass surface by 5 mu m (single side 2.5 mu m) is appropriate.
(2) 광학특성(2) optical properties
그래서, 이상의 조건으로 설정된 화학 연마 공정을 거친 3 그룹의 글래스 판에 대하여, 전광선 투과율과, 표면 저항율과, HAZE율을 계측하면 아래와 같았다. 여기서, 투과율은, 분광색채계 SD-5000(일본전색공업(日本電色工業))을 사용하여, JISK 7361-1에 기초하여 계측하였다. 또한, HAZE율은, 탁도계 NDH 5000(일본전색공업)을 사용하여, JISK 7136에 기초하여 계측하였다. 표면 저항은, 로레스타 MCP-T250(미쓰비시 화학)을 사용하여, JISK 7194에 기초하여 계측하였다.Therefore, the total light transmittance, surface resistivity, and HAZE rate of the three groups of glass plates subjected to the chemical polishing process set under the above conditions were as follows. Here, the transmittance | permeability was measured based on JISK 7361-1 using the spectral colorimeter SD-5000 (Japan Color Industry Co., Ltd.). In addition, HAZE rate was measured based on JISK 7136 using turbidimeter NDH 5000 (Japan Color Industry). Surface resistance was measured based on JISK 7194 using Lorestar MCP-T250 (Mitsubishi Chemical).
Claims (7)
화학 연마 공정 후의 글래스 표면에 도전성 폴리머를 도포하여, 400 ~ 1200Ω/sq의 도전막을 형성하는 막 형성 공정을 구비하고,
막 형성 공정 후 글래스 기판의 전광선 투과율을, 판 두께 0.5mm의 글래스 기판에 대하여 87% 이상으로 한 것을 특징으로 하는 표시장치의 제조방법.A chemical polishing step of bringing the etching solution into contact with the surface of the glass substrate for display device to set the arithmetic mean roughness Ra of the glass surface to 0.7 nm to 70 nm;
And a film forming step of applying a conductive polymer to the glass surface after the chemical polishing step to form a conductive film of 400 to 1200 Pa / sq.
The total light transmittance of a glass substrate after a film formation process was made into 87% or more with respect to the glass substrate of 0.5 mm of plate | board thickness, The manufacturing method of the display apparatus characterized by the above-mentioned.
막 형성 공정 후 글래스 기판의 HAZE율이, 판 두께 0.5mm의 글래스 기판에서 1.5% 미만인 것을 특징으로 하는 표시장치의 제조방법.The method of claim 1,
The HAZE rate of a glass substrate after a film formation process is less than 1.5% in the glass substrate of 0.5 mm of plate | board thickness.
상기 도전성 폴리머의 막 두께는, 100nm ~ 250nm인 것을 특징으로 하는 표시장치의 제조방법.The method according to claim 1 or 2,
The film thickness of the conductive polymer is 100nm to 250nm manufacturing method of the display device.
상기 글래스 기판은, 알루미노 규산염 글래스로 구성되어 있는 것을 특징으로 하는 표시장치의 제조방법.4. The method according to any one of claims 1 to 3,
The glass substrate is made of aluminosilicate glass.
폴리티오펜계 도전성 폴리머가 사용되는 것을 특징으로 하는 표시장치의 제조방법.5. The method according to any one of claims 1 to 4,
A method for manufacturing a display device, wherein a polythiophene-based conductive polymer is used.
상기 에칭액은, 0.5 ~ 3중량%의 불화수소산, 0 ~ 10중량%의 염산, 0 ~ 5중량%의 황산을 함유하여 구성되어 있는 것을 특징으로 하는 표시장치의 제조방법.The method according to any one of claims 1 to 5,
The etching solution comprises 0.5 to 3% by weight of hydrofluoric acid, 0 to 10% by weight of hydrochloric acid, and 0 to 5% by weight of sulfuric acid.
상기 표시장치는, 액정표시장치이고, 상기 도전성 폴리머는, 맞대어 붙인 글래스 기판의 노출 표면에 막으로 형성되는 것을 특징으로 하는 표시장치의 제조방법.7. The method according to any one of claims 1 to 6,
The display device is a liquid crystal display device, wherein the conductive polymer is formed on a exposed surface of a glass substrate bonded to each other by a film.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2010-013355 | 2010-01-25 | ||
JP2010013355A JP5431186B2 (en) | 2010-01-25 | 2010-01-25 | Manufacturing method of display device |
PCT/JP2011/050630 WO2011089990A1 (en) | 2010-01-25 | 2011-01-17 | Method for manufacturing display device |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20120129925A true KR20120129925A (en) | 2012-11-28 |
KR101401678B1 KR101401678B1 (en) | 2014-06-02 |
Family
ID=44306792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020127022178A KR101401678B1 (en) | 2010-01-25 | 2011-01-17 | Method for manufacturing display device |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5431186B2 (en) |
KR (1) | KR101401678B1 (en) |
CN (1) | CN102822729A (en) |
TW (1) | TWI576644B (en) |
WO (1) | WO2011089990A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105906200A (en) * | 2011-08-05 | 2016-08-31 | Hoya株式会社 | Cover Glass For Mobile Device And Production Method Therefor |
KR20140063610A (en) * | 2011-08-29 | 2014-05-27 | 아사히 가라스 가부시키가이샤 | Glass plate and glass plate manufacturing method |
JP6295957B2 (en) * | 2012-10-17 | 2018-03-20 | 旭硝子株式会社 | Method for producing glass substrate with conductive thin film |
WO2015020015A1 (en) * | 2013-08-09 | 2015-02-12 | 日本ケミコン株式会社 | Dye-sensitized solar cell |
GB201403223D0 (en) | 2014-02-24 | 2014-04-09 | Pilkington Group Ltd | Coated glazing |
JP2017071516A (en) * | 2015-10-05 | 2017-04-13 | AvanStrate株式会社 | Manufacturing method of glass substrate |
JP6910854B2 (en) * | 2017-06-02 | 2021-07-28 | 信越ポリマー株式会社 | Conductive polymer dispersion, conductive substrate and its manufacturing method |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09132433A (en) * | 1995-11-13 | 1997-05-20 | Central Glass Co Ltd | Sol-gel film and water-repellent glass using same |
JP2845215B2 (en) * | 1996-09-20 | 1999-01-13 | 日本電気株式会社 | Liquid crystal display device and method of manufacturing the same |
DE69827649T2 (en) * | 1998-12-21 | 2005-12-01 | Chi Mei Optoelectronics Corp. | Electrically conductive laminated glass |
JP5197902B2 (en) * | 2001-08-31 | 2013-05-15 | ステラケミファ株式会社 | Micro-processed surface treatment liquid for glass substrates with multiple components |
JP4538410B2 (en) * | 2003-05-26 | 2010-09-08 | 日本曹達株式会社 | Method for manufacturing translucent substrate with transparent conductive film |
JP2005179132A (en) * | 2003-12-22 | 2005-07-07 | Nishiyama Stainless Chem Kk | Glass etchant liquid, glass etching method, glass substrate for flat panel display and flat panel display |
JP2006253024A (en) * | 2005-03-11 | 2006-09-21 | Hitachi Maxell Ltd | Transparent conductive composition, and transparent conductive film or transparent conductive material using the same |
US7438832B2 (en) * | 2005-03-29 | 2008-10-21 | Eastman Kodak Company | Ionic liquid and electronically conductive polymer mixtures |
JP2008095015A (en) * | 2006-10-13 | 2008-04-24 | Sumitomo Osaka Cement Co Ltd | Coating liquid for forming electroconductive coating film and method for forming electroconductive coating film and the resultant electroconductive coating film |
JP5066895B2 (en) * | 2006-11-14 | 2012-11-07 | 旭硝子株式会社 | Glass substrate for display and manufacturing method thereof |
KR101390526B1 (en) * | 2006-12-22 | 2014-04-30 | 다이니폰 인사츠 가부시키가이샤 | Optical laminated body, method for manufacturing the optical laminated body, and composition for antistatic layer |
TW200835956A (en) * | 2007-02-16 | 2008-09-01 | Au Optronics Corp | Display panel and method for manufacturing thereof and electric-optic device including the display panel and method for manufacturing thereof. |
JP2008300063A (en) * | 2007-05-29 | 2008-12-11 | Shin Etsu Polymer Co Ltd | Conductive ink, transparent conductive layer, input device, and display device |
CN101624468B (en) * | 2009-07-30 | 2012-01-25 | 海宁杰玛高科涂层织物有限公司 | Conductive film of coating of high molecular polymer and preparation method thereof |
-
2010
- 2010-01-25 JP JP2010013355A patent/JP5431186B2/en not_active Expired - Fee Related
-
2011
- 2011-01-17 KR KR1020127022178A patent/KR101401678B1/en active IP Right Grant
- 2011-01-17 WO PCT/JP2011/050630 patent/WO2011089990A1/en active Application Filing
- 2011-01-17 CN CN2011800156156A patent/CN102822729A/en active Pending
- 2011-01-21 TW TW100102299A patent/TWI576644B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP5431186B2 (en) | 2014-03-05 |
TW201142447A (en) | 2011-12-01 |
JP2011150254A (en) | 2011-08-04 |
TWI576644B (en) | 2017-04-01 |
KR101401678B1 (en) | 2014-06-02 |
WO2011089990A1 (en) | 2011-07-28 |
CN102822729A (en) | 2012-12-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR20120129925A (en) | Method for manufacturing display device | |
JP5339089B2 (en) | Flexible transparent conductive film, flexible functional element, and production method thereof | |
JP5573158B2 (en) | Flexible transparent conductive film and flexible functional element using the same | |
US20090202747A1 (en) | Flexible transparent conductive film, flexible functional device, and methods for producing these | |
JPH09283866A (en) | Substrate with transparent conductive film | |
CN108351722B (en) | Thin film touch sensor | |
JPH0266809A (en) | Transparent conductive lamination body | |
KR20130026921A (en) | Transparent conductive film, method for making the same and touch panel with it | |
Leung et al. | A study of degradation of indium tin oxide thin films on glass for display applications | |
KR20180109898A (en) | Conductive laminated film | |
JP2007276322A (en) | Transparent and electrically conductive film for touch panel | |
JP2007163995A (en) | Substrate with transparent conductive film and manufacturing method thereof | |
CN109062431B (en) | Touch module, manufacturing method thereof and display device | |
JP2009135099A (en) | Flexible transparent conductive film, flexible functional element, and its manufacturing method | |
JP2002316378A (en) | Transparent conductive laminated body and touch panel using the same | |
CN108447617B (en) | Method for protecting nano silver wire transparent conductive film | |
JP3947950B2 (en) | Transparent conductive film, transparent touch panel and liquid crystal display element | |
JP5460090B2 (en) | Transparent conductive film, touch panel, and flexible display | |
WO2010134446A1 (en) | Electronic component element | |
JP4085295B2 (en) | Method for producing transparent conductive film for pen input touch panel, pen input transparent touch panel and liquid crystal display element | |
Hong et al. | Characteristics of Indium–Tin–Oxide (ITO) Glass Re-Used from Old TFT-LCD Panel | |
Hong et al. | Enhancement of characteristics of transparent conductive electrode on flexible substrate by combination of solution-based oxide and metallic layers | |
CN217386689U (en) | Low-reflection ITO film | |
JP3313303B2 (en) | Conductive film | |
JP3119583B2 (en) | Laminated film |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20170512 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20180510 Year of fee payment: 5 |