KR20120124545A - Apparatus for substrate using plasma ion - Google Patents

Abstract

PURPOSE: A substrate processing apparatus is provided to easily process a substrate of large size by forming linear plasma as the form which is emitted to outside from the inside of an ion source. CONSTITUTION: A first plasma ion source part(320) is placed inside a processing chamber(300). The first plasma ion source part comprises a first ion source(321) and a second ion source(322). A transport part transfers a substrate which is processed in the first plasma ion source part to an outlet side of the processing chamber. A second plasma ion source part(340) processes the substrate which is transferred to the outlet side of the processing chamber. A partition wall(330) is installed between the first plasma ion source part and the second plasma ion source part.

Description

Substrate treatment apparatus using plasma ion {APPARATUS FOR SUBSTRATE USING PLASMA ION}

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus using plasma ions for treating a substrate using plasma ions.

Plasma and ion sources are used in processes for processing semiconductor wafers, glass substrates for displays, and substrates for manufacturing solar cells. In addition, unit processes using such plasma and ion sources include processes such as plasma enhanced chemical vapor deposition (PECVD), reactive ion etching, plasma surface modification and cleaning, and sputtering.

The types of plasma and ion sources include hollow cathode plasma sources, grid ion sources, end hall ion sources, closed drift type ion sources, and impeded. Or an anode type.

By the way, it is difficult to expand linearly since most plasma and ion sources use a point electron source. Therefore, the substrate processing efficiency is not high because most of the substrate must be processed on a fixed stage.

In order to increase the substrate processing efficiency, it is appropriate to perform a plasma treatment on the substrate during the transfer of the substrate. However, the point electron source is difficult to linearly expand the plasma, which makes it difficult to perform the plasma treatment during the transfer of the substrate.

On the other hand, in the case of an anode layer type ion source, uniform ions can be radiated over a long source length. However, the anode layer type ion source is limited to use because of low ion current density.

The present invention is to provide a substrate processing apparatus using plasma ions that can perform the processing on the substrate in an inline manner.

Another object of the present invention related to the above object is to provide a substrate processing apparatus using plasma ions to treat the substrate using a linear plasma in a plurality of areas in an inline manner, and to effectively discharge contaminants generated in each area. It is to provide.

The substrate processing apparatus using the plasma ion according to the present invention comprises a process chamber; A first plasma ion source unit provided inside the process chamber and performing processing on a substrate entering the inlet side of the process chamber; A transfer unit positioned below the process chamber and transferring the substrate processed by the first plasma ion source to an exit side of the process chamber; A second plasma ion source unit provided inside the process chamber and performing processing on the substrate moving from the first plasma ion source unit to the exit side of the process chamber by the transfer unit; A partition wall disposed between the first plasma ion source portion and the second plasma ion source portion and having a lower end spaced apart from the bottom surface of the process chamber so that the substrate can be moved, and having an inlet formed in the process chamber; Equipped.

The first plasma ion source unit may include a first ion source and a second ion source spaced apart from each other, and a first gas supply unit may be provided between the first ion source and the second ion source to inject a precursor toward the substrate. Can be.

The first ion source and the second ion source may be installed to be inclined toward the first gas supply unit.

 The second plasma ion source unit may include a third ion source and a fourth ion source spaced apart from each other, and a second gas supply unit configured to supply a precursor to the substrate side between the third ion source and the fourth ion source. It can be provided.

The third ion source and the fourth ion source may be installed to be inclined toward the second gas supply unit.

A buffer chamber may be provided at an inlet side of the process chamber, and the buffer chamber may include a heater for heating the substrate.

The substrate may be seated in a tray to enter the process chamber, and the transfer part may move the tray so that the substrate moves from the inlet side to the outlet side.

The first plasma ion source unit and the second plasma ion source unit may deposit a thin film in a linear plasma with respect to the substrate.

The first plasma ion source unit may deposit a thin film in a linear plasma on the substrate, and the second plasma ion source unit may further deposit a thin film in a linear plasma on the thin film of the substrate.

The inside of the process chamber may be vacuum pumped to 1 ~ 50mTorr.

A vacuum pump may be installed above the process chamber, and the vacuum pump may cause a vacuum pumping force to be generated above the process chamber.

The suction port may include a first suction port opened toward the first plasma ion source part on one side of the lower end of the partition wall and the second suction port opened toward the second plasma ion source part on the other end of the bottom of the partition wall.

An intake passage connected to the vacuum pump side may be formed in the partition wall, and the first suction opening and the second suction opening may communicate with the suction passage.

Both sides of the lower end of the partition wall may be inclined toward the substrate, and the first suction opening and the second suction opening may be inclined toward the substrate.

In the substrate processing apparatus using the plasma ions according to the present invention, since a linear plasma is formed in such a manner that a complete discharge current is injected from the inside of the ion source to the outside, a high-density plasma is formed to process the substrate in an inline manner. It is possible to process a large-area substrate by extending the length of the plasma in the direction, and it is possible to process at low pressure, and it is advantageous to cope with contaminants. In this way, when the deposition process is performed in two different regions, the particles and the source of contamination are suppressed from each other to effectively repeat the deposition.

1 is a perspective view showing a substrate processing apparatus using plasma ions according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view taken along line II of FIG. 1.
3 is a cross-sectional view taken along line II-II of FIG. 1.
4 is a view for explaining the operation of the partition wall installed in the substrate processing apparatus using the plasma ion according to the embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the embodiments disclosed below, a substrate processing apparatus using plasma ions is described as an embodiment. A substrate processing apparatus using plasma ions according to an embodiment of the present invention moves a substrate in an inline manner, and processes the substrate using linear plasma.

In addition, in the present embodiment, the method of treating a substrate is partially performed by performing a chemical vapor deposition process, but may be applied to an embodiment using plasma ions in other substrate processing processes.

1 is a perspective view showing a substrate processing apparatus using plasma ions according to an embodiment of the present invention.

In the substrate processing apparatus using plasma ions according to the embodiment of the present invention, as shown in FIG. 1, a plurality of chambers are continuously arranged, and the substrate 10 moves in-line between these chambers. do. The substrate 10 is processed while the substrate 10 is moved between the chambers.

In addition, in order to simultaneously load and unload a plurality of substrates 10, a plurality of substrates 10 are loaded and transported in one tray 20. Substrate 10 may be, for example, a silicon wafer. The substrate 10 is treated with a plasma enhanced chemical vapor deposition (PECVD) for depositing an oxide film, a nitride film, a microcrystalline silicon (uC-Si: H) and amorphous (a-Si: H) silicon thin film. Plasma Enhanced CVD) process, but not limited to deposition of oxide film, deposition of nitrile film, microcrystalline silicon, amorphous silicon or chemical vapor deposition. The tray 20 may be formed with a pocket into which the substrate 10 is inserted, but may support the substrate 10 without the pocket.

Meanwhile, the loading unit 100 is provided to transfer the tray 20 on which the substrate 10 is mounted. The first buffer chamber 200 is connected to the loading unit 100. If necessary, the substrate 10 in which the process is completed may be unloaded into the loading unit 100. Therefore, the loading unit 100 may function as the unloading unit 500.

A stage 700 extending from the loading unit 110 to the unloading unit 500 is provided. The loading unit 110, the unloading unit 500, the first buffer chamber 200, the process chamber 300, and the second buffer chamber 400 are positioned on the stage 700.

The first buffer chamber 200 connected to the loading unit 100 performs a function of heating the substrate 10 transferred from the loading unit 100. Therefore, the heater 210 may be installed in the first buffer chamber 200. The first buffer chamber 200 may be provided in plurality. When the substrate 10 is heated to a predetermined temperature or more in the first buffer chamber 200, deposition on the substrate 10 is performed more quickly and efficiently.

In addition, the process chamber 300 is connected to the first buffer chamber 200 in the moving direction of the tray 20. The process chamber 300 generates plasma ions to process the substrate 10. The process chamber 300 may be configured to have a longer length than the first buffer chamber 200.

A plurality of vacuum pumps 360 are installed outside the upper portion of the process chamber 300, and a plurality of plasma ion source portions 320 and 340 are provided above the process chamber 300. In the present embodiment, the plasma ion source units 320 and 340 generate linear plasma ions.

The second buffer chamber 400 is connected to a position where the substrate 10 is carried out in the process chamber 300. The second buffer chamber 400 may perform cooling on the substrate 10 carried out after the process is performed. A separate cooling device may be provided for cooling, or natural cooling may be performed during the movement of the tray 20. The second buffer chamber 400 may be provided in plurality. After the second buffer chamber 400, an unloading part 500 is provided. However, the unloading unit 500 is not provided separately and receives the tray 20 on which the substrate 10 is seated in the second buffer chamber 400, and then loads the tray 20 through another path. It can be configured to return to.

In addition, a transfer part 420 for moving the tray 20 on which the substrate 10 is seated from the loading part 100 to the unloading part 500 is installed at the bottom of the chambers. The transfer unit 420 may move the substrate 10 in a conveyor manner, or may be implemented in other ways.

When the conveying unit 420 is carried out in a conveyor method, the conveying unit 420 is installed on the stage 700, and a belt 421 supporting the lower portion of the tray 20 and a roller 422 supporting the belt 421. And the motor 423 for rotating the roller 422 may be provided. In another embodiment, the transfer unit 420 may move the tray 20 by using a rail and a roller 422, and in another embodiment, the tray 20 may be moved by using a rack and a panion gear. You can do that.

Meanwhile, the configuration of the process chamber 300 in which the plasma ion source is installed will be described in more detail below. FIG. 2 is a cross-sectional view taken along line II of FIG. 1, and FIG. 3 is a cross-sectional view taken along line II-II of FIG. 1.

As shown in FIG. 2, inside the process chamber 300, a first plasma ion source unit 320 for processing the substrate 10 entering the inlet 310 side of the process chamber 300 is provided. And a second plasma ion source unit for processing the substrate 10 transferred from the first plasma ion source unit 320 by the transfer unit 420 to an outlet 350 side of the process chamber 300. 340 is provided.

In addition, between the first plasma ion source unit 320 and the second plasma ion source unit 340, the lower end is installed to be close to the surface side of the tray 20, so that at least the tray 20 on which the substrate 10 is seated is first. A partition wall 330 spaced apart from the bottom by a width sufficient to move between the plasma ion source unit 320 and the second plasma ion source unit 340 is installed.

The partition wall 330 functions to block particles or contaminants generated in the region of the first plasma ion source unit 320 and the region of the second plasma ion source unit 340 from being transferred to each other.

In addition, a first suction opening 331a is formed at a lower end of the barrier rib 330 and the second suction opening 331b is opened toward the second plasma ion source section 340. do. In addition, a suction path 331 connected to the vacuum pump 360 is formed in the partition wall 330, and the first suction port 331a and the second suction port 331b communicate with the suction path 331. In addition, both bottom surfaces of the partition wall 330 may be inclined toward the substrate 10, and the first suction opening 331a and the second suction opening 331b may be inclined toward the substrate 10.

Meanwhile, the first plasma ion source unit 320 includes a first ion source 321 and a second ion source 322 spaced apart from each other, and between the first ion source 321 and the second ion source 322. The first gas supply unit 323 for spraying the precursor toward the substrate 10 is provided. In addition, each of the first ion source 321 and the second ion source 322 is inclined toward the first gas supply unit 323 so that linear plasma ions are formed at a high density on the surface of the substrate 10. (10) Processing is performed.

In addition, the second plasma ion source unit 340 is configured in the same configuration as the first plasma ion source unit 320. That is, the second plasma ion source unit 340 also includes a third ion source 341 and a fourth ion source 342 spaced apart from each other, and between the third ion source 341 and the fourth ion source 342. A second gas supply unit 343 for injecting a precursor to the substrate 10 side is provided. In addition, each of the third ion source 341 and the fourth ion source 342 is inclined toward the second gas supply part 343.

The first, second, third and fourth ion sources 342 are provided in the same configuration. This ion source may be implemented as an asymmetric magnetron source or a hollow cathode source or the like to form a linear plasma.

That is, for example, the ion source may consist of at least one electrode connected to an AC power source, a magnetron and a plurality of magnets facing each other, the plurality of magnets creating a null magnetic field point in the discharge cavity and The electrodes of each plasma beam source connected to the AC power source alternately function as an anode electrode or a cathode electrode for half a cycle to ionize the precursor gas so that a linear plasma is generated on the surface of the substrate 10.

Hereinafter, the operation of the membrane substrate processing apparatus using plasma ions according to the embodiment of the present invention will be described.

In order to deposit a film on the substrate 10, a tray 20 on which a plurality of substrates 10 are mounted is mounted on the loading unit 100. When the tray 20 is seated on the loading unit 100, the first buffer chamber 200 opens the gate 220, and the transfer unit 420 enters the tray 20 into the first buffer chamber 200. When the tray 20 enters the first buffer chamber 200, the next tray 20 is seated on the loading unit 100 again.

Accordingly, the transfer unit 420 enters the second tray 20 into the first buffer chamber 200. Subsequently, the next tray 20 is introduced into the first buffer chamber 200 through the loading unit 100. As such, when at least two trays 20 enter the first buffer chamber 200, the first buffer chamber 200 closes the gate 220.

Meanwhile, the first buffer chamber 200 heats the substrate 10 seated on the trays 20 that enter the first buffer chamber 200. Therefore, the substrate 10 is heated in the first buffer chamber 200 and then enters the process chamber 300. When the substrate 10 is seated in the tray 20 and enters the process chamber 300, the process chamber 300 or the first buffer chamber 200 and the inside of the process chamber 300 are pumped by the vacuum pump 360. do. In this case, the vacuum pressure in the process chamber 300 or the first buffer chamber 200 and the process chamber 300 may be 1 to 50 mTorr.

When the substrate 10 enters the process chamber 300 together with the tray 20, the precursor is injected onto the substrate 10 from the first gas supply unit 323 of the first plasma ion source unit 320. In addition, alternating current is applied to the first ion source 321 and the second ion source 322 to generate the plasma downstream in a magnetic mirror field. This allows linear plasma to occur on the substrate 10 so that a film is first deposited onto the substrate 10.

At this time, particles and contaminants generated in the first plasma ion source unit 320 are sucked into the first suction port 331a formed in the partition wall 330, and are discharged to the outside through the suction path 331 by the pumping force of the vacuum pump 360. Discharged.

Subsequently, when the tray 20 is moved by the transfer unit 420, the tray 20 enters the lower side of the second plasma ion source unit 340 after passing through the partition wall 330. In this case, the second plasma ion source unit 340 generates plasma in the same manner as the first plasma ion source unit 320 so that the film is secondarily deposited on the substrate 10 on which the film is already deposited. In addition, even when deposition is performed by the second plasma ion source unit 340, particles and contaminants generated in the first plasma ion source unit 320 are sucked into the second suction port 331b formed in the partition wall 330, and are vacuum pump 360. It is discharged to the outside via the suction passage 331 by the pumping force of the).

4 is a view for explaining the operation of the partition wall installed in the substrate processing apparatus using the plasma ion according to the embodiment of the present invention.

As shown in FIG. 4, a source of contamination may occur during film deposition in the first plasma ion source unit 320 and the second plasma ion source unit 340. However, the pollutant is sucked into the first suction port 331a and the second suction port 331b of the partition wall 330, and then exhausted to the outside through the suction path 331, so that the first plasma ion source unit 320 and the second plasma are discharged. The pollutant generated in the ion source unit 340 is blocked from being transmitted to the counter side.

Furthermore, in the embodiment of the present invention, the vacuum pump 360 is positioned above the process chamber 300 so that the vacuum pumping is made to the upper side of the process chamber 300, and the bottom of the partition wall 330 is formed to be inclined. Since the inlets 331a and 331b are formed in the inclined portion, the spaces between the partition wall 330 and the bottom of the process chamber 300 block the movement of the pollutants to the area between the pollutants. Effectively blocking the contamination of the source portion 320, 340 side.

The substrate processing apparatus using the plasma ions according to the embodiment of the present invention as described above may be processed such as thin film deposition on the substrate in an inline manner, and when the thin film is deposited, the thickness of the thin film in the vertical direction is two The deposition may be performed by using a plasma ion source unit. Therefore, a relatively thick thick film can be formed by controlling the transfer speed of the substrate, or a relatively thin ultra-thin film can be formed using one plasma ion source portion, so the variability in functionality is excellent. Moreover, the in-line method can process substrates continuously, so the substrate processing productivity is very good.

The embodiments of the present invention have been described through the embodiments described in the drawings and the detailed description of the present invention, but these are merely exemplary, and those skilled in the art to which the present invention pertains have various modifications and equivalents therefrom. Examples are possible. Therefore, the technical protection scope of the present invention will be defined by the appended claims.

100 ... loading section
1st buffer chamber
300 ... process chamber
330 bulkhead
331a ... first inlet
331b ... second intake
400 ... second buffer chamber
500 ... Unloading Section
600 ...
700 ... Stage

Claims (14)

Process chambers;
A first plasma ion source unit provided inside the process chamber and performing processing on a substrate entering the inlet side of the process chamber;
A transfer unit positioned below the process chamber and transferring the substrate processed by the first plasma ion source to an exit side of the process chamber;
A second plasma ion source unit provided inside the process chamber and performing processing on the substrate moving from the first plasma ion source unit to the exit side of the process chamber by the transfer unit;
A partition wall disposed between the first plasma ion source portion and the second plasma ion source portion and having a lower end spaced apart from the bottom surface of the process chamber so that the substrate can be moved, and having an inlet formed in the process chamber; A substrate processing apparatus using plasma ions provided.
The method of claim 1, wherein the first plasma ion source unit has a first ion source and a second ion source spaced apart from each other, and the first ion source and the second ion source between the first ion source for injecting a precursor toward the substrate side 1 A substrate processing apparatus using plasma ions provided with a gas supply unit.
The substrate processing apparatus of claim 2, wherein the first ion source and the second ion source are inclined toward the first gas supply unit.
The semiconductor device of claim 1, wherein the second plasma ion source unit comprises a third ion source and a fourth ion source spaced apart from each other, and between the third ion source and the fourth ion source, sprays a precursor toward the substrate. 2. A substrate treating apparatus using plasma ions provided with a gas supply unit.
The substrate processing apparatus of claim 2, wherein the third ion source and the fourth ion source are inclined toward the second gas supply unit.
The substrate processing apparatus of claim 1, wherein a buffer chamber is provided at an inlet side of the process chamber, and a buffer is provided at the buffer chamber.
The substrate processing apparatus of claim 1, wherein the substrate is mounted on a tray to enter the process chamber, and the transfer unit moves the tray to move the substrate from the inlet side to the outlet side.
The substrate processing apparatus of claim 1, wherein the first plasma ion source portion and the second plasma ion source portion deposit a thin film in a linear plasma with respect to the substrate.
The plasma of claim 8, wherein the first plasma ion source portion deposits a thin film in a linear plasma on the substrate, and the second plasma ion source portion further deposits a thin film in a linear plasma on the thin film of the substrate. Substrate treatment apparatus using ions.
The substrate processing apparatus of claim 1, wherein the inside of the process chamber is vacuum pumped to 1 to 50 mTorr.
The substrate processing apparatus of claim 1, wherein a vacuum pump is installed on the process chamber, and the vacuum pump generates a vacuum pumping force on the process chamber.
According to claim 1, wherein the suction port is the first suction port which is opened to the side of the first plasma ion source portion on one side of the lower end of the partition wall and the second suction port opened to the second plasma ion source portion side on the other side of the lower end of the partition wall. Substrate processing apparatus using a plasma ion having a.
The substrate processing apparatus of claim 12, wherein a suction passage connected to the vacuum pump is formed inside the partition wall, and the first suction opening and the second suction opening communicate with the suction passage.
The substrate processing apparatus of claim 13, wherein both bottom surfaces of the barrier rib are inclined toward the substrate, and the first suction opening and the second suction opening are inclined toward the substrate.

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