KR20120099808A - Field effect power generation device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a field effect power generation apparatus, and since electric energy is obtained by passing through a potential barrier using a field effect, most carriers generate electric energy by pre-supplying energy to the carrier. A high efficiency field effect power generation apparatus is realized, and an apparatus which effectively utilizes the electric energy obtained by generating good power generation without supplying combustion energy such as fossil fuel from the outside is developed.

Description

Field effect generation device {FIELD EFFECT POWER GENERATION DEVICE}

The present invention relates to an apparatus for generating power using the field effect. Energy obtained by burning fossils such as coal and petroleum has a deterioration in the global environment and its reserves, and it is difficult to use them in the long term. However, it is necessary for the survival of human beings to solve the environmental problem and to be freed from the fossil energy depletion problem by developing the field effect generator. By using the field effect generator of the present invention, it becomes possible to efficiently convert the kinetic energy of electrons accelerated by the electric field into electrical energy. Therefore, when the field effect power generation device of the present invention is spread, the total amount of carbon dioxide which is the cause of global warming is suppressed, the emission of harmful waste is reduced, and the problem of depletion accompanying fossil energy such as coal, oil, gas, and nuclear power is also solved. Therefore, there is a possibility that the energy necessary for the long-term survival of mankind can be stably supplied by the electric field generator of the present invention.

The present invention utilizes the field effect to inject a carrier from the carrier output material into the channel forming material, and the injected carrier is accelerated in an acceleration channel on the surface of the channel forming material, thereby pre- supplying energy to the carrier. And a carrier penetrating through the potential barrier by the quantum mechanical tunnel effect, and the carrier is collected in the carrier absorption collector to perform efficient power generation.

Burning fossil fuels such as coal and oil releases carbon dioxide into the atmosphere. The released carbon dioxide acts as a greenhouse gas, resulting in global warming. However, humanity needs energy to maintain civilization. It is necessary to obtain electrical energy by power generation. Therefore, the problem of the conventional power generation apparatus is shown below.

(1) coal power generation

(a) Coal is abundant on the planet, low in price and stable in supply. However, when coal is burned, a large amount of carbon dioxide is emitted into the atmosphere, and the emitted carbon dioxide acts as a greenhouse gas, causing global warming.

(b) Combustion of coal releases large amounts of nitrogen oxides and sulfur oxides into the atmosphere, causing acid rain and adversely affecting the global environment.

(c) Coal ash remains after coal combustion, and difficult problems such as cost and location occur in order to perform the treatment.

(2) oil power generation

(a) The burning of petroleum releases large amounts of carbon dioxide into the atmosphere, and the released carbon dioxide acts as a greenhouse gas, causing global warming.

(b) Oil reserves are finite and oil prices are likely to rise, making the supply system unstable.

(3) nuclear power

(a) Radiation is emitted from the nucleus, which is likely to adversely affect the human body.

(b) Disposal after use of fuel has a difficult problem of cost and location.

(c) In some cases, the safety of nuclear power generation may be a problem due to earthquakes.

(4) solar cell

(a) It does not emit carbon dioxide, but its power generation efficiency is not good.

(b) The manufacturing cost is high because silicon is used.

(c) It cannot be used at night or during periods of no sun.

(5) wind power

(a) It does not emit carbon dioxide, but its power generation efficiency is not good.

(b) The manufacturing cost is high because the apparatus becomes large.

(c) May not be used during periods when the wind is not blowing.

All conventional power generation schemes are devices that convert existing energy sources into electrical energy. There are a number of drawbacks to energy converters, and considering the finite nature of fossil resources and the global environment, it is necessary to create new sustainable sources of energy. In a civilized society, almost all devices and transportation devices consume a large amount of energy, and therefore, development of a power generation device having good efficiency is desired. In addition, it is necessary to use a material or a structure in which the production cost of the power generation device does not increase. In order to prevent the price of the generated electric energy from burdening the user, it is desirable to develop a device in which the durability of the power generation device is sufficiently secured. The field effect power generation device of the present invention is different from the conventional energy conversion device in principle and can realize true electric energy generation.

The field effect development of the present invention is a novel method which is fundamentally different from the conventional generation. Therefore, since the terms need to be used strictly, the definitions of the terms are described below.

[Definition of Development]

In the case where an insulating material is present between two conductive materials and the conductive material in the device, a positive charge is generated from one of the two conductive materials without supplying thermal energy or solar energy as an external energy source to the device. Alternatively, when a carrier with negative charges moves to another conductive material, one conductive material becomes a positive electrode with a positive charge, and the other conductive material becomes a negative electrode with a negative charge, and electrical energy is generated when it becomes possible to supply electrical energy. . This phenomenon is defined as true development.

[Difference between power generation and energy conversion]

There is an energy source outside the device, and the reception of external energy within the device and the conversion of the received energy into electrical energy is called energy conversion. If no energy is supplied to the device from the outside, and all of the output energy is generated inside the device, it can be said to be a pure power generation device. When the energy output from the device is larger than the energy input from the outside, it is considered that power generation has been carried out inside the device, and thus it is a wide-range power generation device.

[Theory of Field Effect Development]

1 shows the conventional state of the material. In the figure, the carrier output material 1 contains positively charged holes 49 and negatively charged electrons 50 in almost equal amounts, and they are attracted to each other by an electrostatic force following Coulomb's law. Therefore, the positive or negative charge deviates from the carrier output material 1 and is hardly released to the outside. By the way, the case where a normal or negative charge is discharge | released from within a substance by carrying out any treatment to a normal substance is considered. As shown in Fig. 2, for example, when electrons carrying negative charges move from one substance to another substance, the electrons become excessive and the substance in which negative charges accumulate becomes the power supply negative voltage terminal 44. The material which lacks and remains a positive charge becomes the power supply positive voltage terminal 43. In this state, electrical energy is generated. When electrons move from one substance to another, negative charges accumulate in the material of the moving destination and positive charges remain in the material of the moving source. Therefore, when the power positive voltage terminal 43 and the power negative voltage terminal 44 are connected by a conductive line, the electrons move from the power negative voltage terminal 44 to the power positive voltage terminal 43, whereby the current is positive power voltage. It flows from the terminal 43 to the power supply negative voltage terminal 44. Considering the above phenomenon from the viewpoint of energy, electrons are released from the substance of the moving destination, and power is generated by moving to the substance of the moving source, thereby generating energy. In reality, as shown in FIG. 3, an insulator 8 exists between the power supply positive voltage terminal 43 and the power supply negative voltage terminal 44. In order to generate electrical energy effectively, it is necessary to temporarily store the generated electrical energy in the energy accumulator 15. As shown in FIG. 4, when the energy accumulator 15 is connected between the power supply positive voltage terminal 43 and the power supply negative voltage terminal 44, holes are discharged from the power supply positive voltage terminal 43. Is output to move to one terminal of the energy accumulator 15, and electrons are output from the power supply negative voltage terminal 44 to move to the other terminal of the energy accumulator 15, whereby electrical energy is transferred to the energy accumulator 15. Accumulate. As shown in FIG. 5, when the electrical load 5 is connected in parallel to the energy accumulator 15, the electric current output from the energy accumulator 15 flows to the electrical load 5, whereby the generated electrical energy is generated. Consumed. Moving electrons from one material to another generates electrical energy, so we consider how to move them effectively. As shown in FIG. 6, one material is called a carrier output material 1, and the other material is called an electron absorption collector 26. As shown in FIG. There is an insulator between the carrier output material 1 and the electron absorption collector 26. Because without the insulator, the positive charges present inside the carrier output material 1 and the negative charges present inside the electron absorption collector 26 are subjected to electrostatic forces following Coulomb's law, and the electrons return to the carrier output material 1. This is because it cannot be used as electrical energy. Consider the case where there is a vacuum as the insulator 8 between the carrier output material 1 and the electron absorption collector 26. In order to move the electrons from the carrier output material 1 to the electron absorption collector 26, a channel forming material 2 is placed in contact with the carrier output material 1 as an intermediate medium. As shown in FIG. 7, in the case where the carrier output material 1 and the channel forming material 2 are electrically connected well, the potential barrier generating portion between the carrier output material 1 and the channel forming material 2 is shown. 20 is present, which impedes the movement of the carrier. In addition, there is a potential barrier corresponding to the irreversible process generating portion between the channel forming material 2 and the vacuum, preventing electrons from emitting. Thus, in order to move the electrons in the carrier output material 1 to the electron absorption collector 26, kinetic energy is imparted to the electrons. In the field effect development of the present invention, the kinetic energy is applied to the electrons by using the action of the electric field. That is, an acceleration electrode is disposed to accelerate the carrier, and a positive voltage is supplied from the power supply to the acceleration electrode, and a positive charge is accumulated in the electrode, and an electric field is formed between the region where the negative voltage is applied and the electrode where the positive charge is accumulated. When electrons are accelerated by the action of the generated electric field, the electrons are in a state of retaining kinetic energy. The electrons holding kinetic energy become carriers and move inside the acceleration channel 9 shown in FIG. When sufficient kinetic energy is given to the electrons, the operation of the electrons is divided into the case of performing injection and the case of performing emission.

(1) In the case of electron injection

In general, hot carriers are generated by applying sufficient kinetic energy to carriers such as electrons or holes, and hot carriers pass through a potential barrier, whereby hot carriers Moving to another area is called injection. This phenomenon is quantum tunneling. That is, since the carrier has a wave property, the carrier moves through the potential barrier due to the quantum mechanical tunnel effect. When the kinetic energy held by the carrier is large enough, ultra-hot carriers are generated. In the case where the potential barrier between the one material A and the other material B is low, when a large amount of electrons accumulate in the material B, electrons leaking from the material B to the material A are generated and the power generation voltage cannot be increased. Therefore, in order to increase the power generation voltage, the potential barrier between the material A and the material B is set high. When the potential barrier is high, the number of electrons passing through the potential barrier by the quantum mechanical tunnel effect is small. Thus, in order to overcome the high potential barrier, the carriers present inside Material A need to have sufficiently large kinetic energy. By the way, since the kinetic energy possessed by the ultra-hot-carrier is sufficiently large, it is possible to overcome the high potential barrier. This phenomenon is called super hot carrier injection. In the field effect power generation apparatus of the present invention, an ultra-hot-carrier is generated by effectively using an electric field, and the material B is penetrated through the high potential barrier by the quantum mechanical tunnel effect by the injection of the ultra-hot carrier. Efficient power generation is achieved by accumulating a large number of carriers and obtaining a high power generation voltage. Inside the acceleration channel 9 shown in FIG. 9, electrons injected from the carrier output material 1 into the channel forming material 2 travel on the surface of the channel forming material 2. In the same figure, the surface movement 23 of the carrier indicates that electrons move the surface of the channel forming material 2.

(2) When the former performs emission

The release of electrons from the material into the vacuum is called emission. There are two types of emission, thermal emission and cold emission.

(a) When heat energy is applied to a substance (cathode), since electrons hold a large kinetic energy, electron emission is performed in a vacuum in a weak electric field by the thermal emission phenomenon.

(b) When a material having a very thin tip is prepared and an electric field is concentrated at the tip, electrons are emitted in a strong electric field in a vacuum by a cold emission (or field emission) phenomenon.

In order to emit electrons from the material into the vacuum, the electrons need to have sufficiently large kinetic energy. In other words, by generating electrons having sufficiently large kinetic energy, high power generation voltage is obtained when the high potential barrier is penetrated and passed through the quantum mechanical tunnel effect. As shown in Fig. 10, when the electrons have sufficiently large kinetic energy, the electrons escape from the surface of the channel forming material 2 and are emitted in vacuum. The movement of the former is represented by the arrow of the emission 22. Electrons that have been emitted in the vacuum are accelerated inside the acceleration channel 9, impinging on and absorbing the electron absorption collector 26. Therefore, electrons become excessive in the electron absorption collector 26 and become negative potential. On the other hand, positive charges remain in the carrier output material 1 which outputs the electrons, thereby becoming a positive potential. Therefore, if the carrier output material 1 of the positive potential is called the power supply positive voltage terminal and the electron absorption collector of the negative potential is the power supply negative voltage terminal, electrical energy is generated at both ends. In the above power generation process, little energy is supplied from the outside. Since the electrode which generates an electric field is arrange | positioned inside the insulator 8, since there exists little current leaking from an electrode, electric power generation with good efficiency is achieved. The generated electrical energy is a result obtained by acquiring kinetic energy by accelerating electrons by the effect of an electric field. Therefore, the field effect generation of the present invention is the generation of electrical energy and is different from the energy conversion, so there is no need to apply the law of energy conservation.

[Energy accumulator]

When a positive electrode having a positive charge and a negative electrode having a negative charge are generated by the power generation phenomenon, the generated positive and negative charges prevent the movement of each of the positive and negative charges generated at the next time to the positive electrode and the negative electrode. Therefore, when positive charges reach the positive electrode, the positive charges are moved to one terminal of the energy accumulator, and when negative charges reach the negative electrode, the efficient charge is made possible by moving the negative charges to the other terminal of the energy accumulator.

[Consumption of Electric Energy]

When an electrical load is connected between a material having a static charge and a material having a negative charge, a current flows through the electrical load, and the dissipation of the positive and negative charges is called the consumption of electrical energy.

[Carrier acceleration]

When a positive charge in a material moves, it becomes a positive charge carrier, and when a negative charge moves, it becomes a negative charge carrier. Usually, a positive charge carrier is called a hole and a negative charge carrier is called an electron. The movement of the positively charged carrier and the negatively charged carrier by the electrostatic force following Coulomb's law is called the acceleration of the carrier.

[Carrier Collection]

Electrostatic carrier or negative charge carrier being collected in the collector.

[Potential barrier]

Potential barriers exist when the transfer of static or negative charges is hampered by electrostatic forces that follow Coulomb's law.

[Difference of Potential Barriers in Injection and Emission]

Injection is the movement of a carrier between two different materials that are electrically connected. Injection is carried out when the carrier penetrates through the potential barrier existing at the boundary of two different materials by a quantum mechanical tunnel effect. Since the two other materials are both conductive materials or semiconductor materials, the potential barrier present at the boundary between the two different materials is in a relatively low state, so that injection can be performed even when the kinetic energy held by the carrier is relatively small. Do. In the case where the conductive material is present in the vacuum, the electrons are emitted from the conductive material into the vacuum, and the generated electrons are collected in the collector, thereby generating power generation. In this case, it is relatively easy to collect electrons which are emitted in the vacuum and fly out to the collector. However, it is very difficult to emit electrons from the conductive material in vacuum. For example, when the energy present in the outside can be supplied to the conductive material, the electrons present in the inside of the conductive material can obtain a large kinetic energy, so that it is relatively easy to emit electrons in the vacuum from within the material. In this case, however, it is not a power generation phenomenon, but a simple energy conversion is performed, which is fundamentally different from the power generation device of the present invention. Therefore, in the case where there is no energy supplied from the outside, the electrons existing inside the conductive material realize a large kinetic energy, and the potential barrier between the conductive material and the vacuum is utilized using the kinetic energy. Consider the conditions under which the emission of electrons into the vacuum is realized by the quantum mechanical tunnel effect.

[Sliding & emission]

In order to perform field effect power generation, it is necessary to separate electrons from a substance. It is possible to emit electrons using the effect of an electric field, but usually the amount of electrons emitted is small. Therefore, in order to improve power generation efficiency, a method of increasing the amount of emitted electrons is developed. To consider the release of electrons from the restraint by electrostatic forces in accordance with Coulomb's law by positive charges in matter, the case where the emergency object deviates from Earth's gravity is referred to. Newton's law of universal gravitation attracts objects to Earth and makes it difficult to escape from them. In the case of rocket injection, the explosive reaction of fuel overcomes the earth's attraction and takes off from the surface of the earth. By the way, a non-flight plane takes off in a different way than a rocket. That is, the plane glides before taking off. In other words, the plane moves and accelerates the surface of the runway immediately before takeoff, so that the plane can take off when the gas reaches a state in which it has sufficient kinetic energy. Even when electrons are released from the material and released in vacuum, the electrons need to have a sufficiently large kinetic energy. Electrons also make it possible to obtain sufficient kinetic energy by performing a sliding movement while accelerating on the surface of the material, overcoming the electrostatic force following Coulomb's law and being released out of the material. Considering the large difference in fuel used in the takeoff of an airplane and the takeoff of a rocket, if electrons are released from the material after the electrons are accelerated at the surface of the material to obtain sufficient kinetic energy, the energy required for the departure from the material is reduced and efficient. Becomes The movement of electrons by accelerating at the surface of the material and then being emitted in vacuum is called sliding emission. When a plurality of electrodes are placed in the insulator 8 disposed on the surface of the channel forming material 2 and the positive charges are supplied to the electrodes, the electrons injected into the channel forming material 2 receive an acceleration force and the sliding of the electrons is already achieved. Cause Sean. The electrons acquire kinetic energy by carrying out a sliding-emission, after which the electrons are completely released from the material and are emitted in vacuum. At this time, since the electrode is in the insulator, almost no current flows out of the electrode, so that the loss of energy is almost zero. Therefore, in the present invention, efficient power generation is achieved by using the electron sliding emission. When it is realized that the electrons are moved at high speed on the surface of the conductive material or the semiconductor material, it is relatively easy for the electrons to escape from the material and emit into the vacuum, so that the power generation phenomenon is realized. The state of moving electrons at high speed on the surface of the conductive material or semiconductor material is the movement in the two-dimensional plane of the electrons. By the way, since a normal material is three-dimensional, special research needs to be carried out to realize the movement in the two-dimensional plane of the electrons in the material. That is, by reducing only one dimension in which electrons move, it becomes possible to realize movement in the two-dimensional plane of electrons in a material. In order to realize the movement in the two-dimensional plane of electrons in the material, there are the following methods.

(1) Create a very thin material.

(2) The substance with few electrons which are carriers is created.

Fabrication of graphene using a carbon-based material produces a very thin material, which allows electrons to move in the horizontal direction, and accelerates electrons in the acceleration channel 9 to increase It becomes possible to give kinetic energy. In addition, when a PN junction is formed using a P-type semiconductor and an N-type semiconductor and an electric field effect is applied to inject electrons, which are the majority carriers of the N-type semiconductor, into the P-type semiconductor, the electrons are the minority carriers in the P-type semiconductor. Performs sliding movement in the acceleration channel of the surface of the P-type semiconductor. It becomes possible to accelerate electrons and impart large kinetic energy to the electrons in the acceleration channel 9 which is generally on the two-dimensional surface of the P-type semiconductor.

[Development Condition 1] Injection of a carrier is performed between two different materials.

[Development Condition 2] Sliding and emission are performed on the electron.

[Development Condition 3] The electrons in the material are emitted in a vacuum.

[Development Condition 4] The electrons that were emitted in the vacuum are collected in the collector.

[Development Condition 5] Positive and negative charges move to the energy accumulator.

[Development Condition 6] An electrical load is connected to both ends of the energy accumulator, and a positive charge and a negative charge disappear as a current flows through the electrical load.

[Pre-supply of energy]

In order to achieve good field effect generation, energy is supplied to the electrons in the material in advance. The phenomenon that electrons are emitted in a vacuum from a substance is classified into two types shown below.

(1) abrupt emission

When an external electric field is applied to a low temperature material, electrons are emitted from the material. This is called cold cathode emission. At this time, although the kinetic energy possessed by the electrons in the electron-emitting substance is small, the emission is effected by the effect of the high electric field. In the field emission of electrons from the cold cathode, it is necessary to satisfy the following conditions.

(1) A sufficiently high electric field is applied to the electron emitting material.

(2) By making the radius of curvature of the stage of the electron-emitting material sufficiently small, the electric field is concentrated at the tip.

In the case of field emission of electrons from the cold cathode, no pre-treatment is performed on the electrons in the material, and electrons are emitted from the material into the vacuum under the effect of a high electric field. The disadvantage is that the number is very small. The phenomenon of field emission of electrons from the cold cathode is called abrupt emission. In order to perform an urgent emission, it is necessary to make the electric field applied from the outside of the substance sufficiently strong. When the imitation of the former is carried out, it is very difficult to generate electricity with good efficiency since the amount of emission is small. In other words, when the applied electric field is strengthened, the electric current leaking from the electrode increases, and when the radius of curvature of the tip of the electron-emitting material is reduced, difficulties arise in durability, and practical development is difficult. Therefore, in the present invention, the preprocess described below is performed to the former before the emission.

(2) Emission after sliding

The rapid emission causes a decrease in power generation efficiency. Therefore, appropriate processing is performed before the former performs the emission. The process of supplying kinetic energy to electrons in advance is called energy pre-supply. By supplying energy to the electrons immediately before the electrons perform the emission, the number of electrons to emit the electrons is increased, thereby improving the power generation efficiency. In the present invention, energy is supplied to the electrons inside the electron-emitting material.

The following describes the details of the procedure for carrying out the energy supply to the electrons inside the electron emitting material. Use the electrode to move the carrier and apply voltage to the electrode. Corresponding to each state of the former, the electrode is used separately. There are five types of electrodes shown below.

(1) injection electrode

(2) sliding electrode

(3) tunneling electrode

(4) emission electrode

(5) accelerating electrode

Below, the detail of these 5 types of electrodes is described.

(1) injection electrode

There are two kinds of conductive or semiconductor materials, and these are referred to as materials A and B. Material A and Material B are placed in electrical contact with each other. Consider the case where the carrier is injected (injected) from the substance A into the substance B by the effect of the electric field. An insulator is placed on the top surface of material B, and an injection electrode is placed inside the insulator. Since the carrier is injected from material A, material A is called the carrier output material. A positive charge is supplied from the power supply to the injection electrode and a negative charge to the carrier output material. An electric field is generated between the injection electrode supplied with positive charge and the carrier output material supplied with negative charge. The injection of the carrier into the material B from the carrier output material is effected by the effect of the generated electric field. The injected carriers travel in channels formed on the surface of material B. Since a channel is formed on the surface of the material B, the material B is called a channel forming material. When carrier injection is performed from the carrier output material to the channel forming material, anti-carrier injection is performed from the channel forming material to the carrier output material by the reaction. In the case where the carrier is an electron, the anti-carrier is a hole, and when electrons are injected from the carrier output material to the channel forming material, holes are injected from the channel forming material to the carrier output material by the reaction. In contrast, when the carrier is a hole, the anti-carrier is an electron, and when an injection of holes is performed from the carrier output material to the channel forming material, electrons are injected from the channel forming material to the carrier output material by the reaction. Since the injection electrode is disposed in the insulator, the impedance between the carrier output material and the channel forming material and the injection electrode is kept high. Therefore, even if a voltage is applied to the injection electrode from the power supply, since the current flowing out from the power supply is extremely small, the power supplied from the power supply is also extremely small, and the power generation efficiency is improved.

(2) sliding electrode

An insulator is disposed on the surface of the channel forming material. An acceleration channel is formed near the surface of the channel forming material and the boundary of the insulator. A sliding electrode is used to move electrons in the acceleration channel into the sliding phase. The sliding electrode is disposed in the insulator. When the carrier is electrons, positive charges are stored in the sliding electrode. The attraction force following Coulomb's law acts between the positive charge accumulated in the sliding electrode and the negative charge retained by the electrons. Thus, by the electric field effect, electrons move in the sliding phase in the channel and are gradually accelerated. When the carrier is a hole, negative charge is accumulated in the sliding electrode. The attraction force following Coulomb's law acts between the negative charge accumulated in the sliding electrode and the positive charge held by the hole. Therefore, by the effect of the electric field, the hole moves in the sliding phase in the channel and is gradually accelerated. Since the sliding electrode is disposed in the insulator, the impedance between the carrier output material and the channel forming material and the sliding electrode is kept high. Therefore, even if a voltage is applied to the sliding electrode from the power supply, since the current flowing out from the power supply is very small, the power supplied from the power supply is also extremely small, and the power generation efficiency is improved, so that practicality is satisfied.

(3) tunneling electrode

There is an acceleration channel on the surface of the channel forming material and an irreversible process generator at the end of the acceleration channel. That is, an insulator is disposed at the end of the channel forming material. The insulator placed is called an insulating thin film when it is very thin. The insulating thin film acts as an irreversible process generator with respect to the carrier, and a potential barrier exists in the irreversible process generator. If the insulation is thick, the carrier cannot pass over the potential barrier. In consideration of quantum mechanics, however, there is a wave in the carrier, and when the insulator is a thin film, there exists a carrier through which the carrier passes through the potential barrier by the tunnel effect. In other words, when the carrier becomes a hot carrier by having a sufficiently large kinetic energy, the hot carrier passes through the potential barrier by the quantum mechanical tunnel effect. In this case, a tunneling electrode is used to generate a hot carrier. Since an insulator such as silicon dioxide is disposed between the tunnel electrode and the channel forming material, the current flowing out of the tunnel electrode is extremely small. Therefore, the power input from the power source in order for the tunnel electrode to generate an electric field is very small. The carriers are accelerated by the charges accumulated in the tunnel electrode and the carriers in the channel based on Coulomb's law. Thus, the carrier passes through the potential barrier by the quantum mechanical tunnel effect. Carriers passing through the potential barrier are finally collected in the carrier absorbing collector. Since the carrier collected in the carrier absorption collector cannot be returned to its original state, the process of passing through the potential barrier by the tunnel effect is irreversible. As the carrier passes through an irreversible process, new energy is generated.

(4) emission electrode

When the insulator disposed at the stage of the channel forming material is a thin film, the carrier passes through the potential barrier based on the quantum mechanical tunnel effect by the action of the tunnel electrode. However, another phenomenon occurs when the insulation disposed at the stage of the channel forming material is a vacuum. If the carrier is electrons and there is a vacuum at the end of the channel forming material, an emission electrode is used to release electrons in the vacuum. The vacuum at the stage of the channel forming material becomes an irreversible process generator, where there is a potential barrier. This potential barrier corresponds to the work function of the material. If the kinetic energy held by the electron is small, it cannot pass through the potential barrier at the boundary between the channel forming material and the vacuum. However, if the kinetic energy possessed by the electron is sufficiently large, the wavelength of the electron exhibiting the wave characteristic becomes sufficiently short and passes through the potential barrier at the boundary between the channel forming material and the vacuum due to the quantum mechanical tunnel effect. It becomes possible. An electric field is generated by the positive charge accumulated in the sliding electrode, and electrons are accelerated in the channel by the electric field effect, so that the electrons have sufficiently large kinetic energy. Electrons with sufficiently large kinetic energy are emitted in vacuo from the stage of the channel forming material. A high resistance state is maintained between the emission electrode and the channel forming material by disposing a good insulating material such as silicon dioxide. Since the resistance electrode is in a high resistance state between the channel forming material, even if a voltage is applied to the emission electrode from the power supply, the current leaking from the emission electrode becomes extremely small. Therefore, even if the emission electrode is disposed, the power loss consumed in this portion is very small, so the power generation efficiency is good.

(5) accelerating electrode

An electric field is generated by the positive charge accumulated in the emission electrode, and electrons are emitted from the channel forming material by the effect of the electric field. The electrons which have been immobilized escape in the direction of the electron absorption collector. Since no charge is accumulated in the electron absorption collector in the initial state, the flying electrons easily reach and are absorbed by the electron absorption collector. When negative charges are accumulated in the electron absorption collector, a repulsive force based on Coulomb's law acts between the accumulated negative charges and the negative charges held by the emergency electrons. Therefore, the electrons receive the repulsive force from the electron absorption collector and cannot approach the electron absorption collector. In order for the flying electrons to overcome the repulsive force from the electron absorption collector and approach the electron absorption collector, it is necessary to sufficiently increase the kinetic energy held by the flying electrons. Accelerating electrodes are used to speed up the flying electrons. The accelerating electrode is arranged in front of the emergency direction of the electrons and accumulates positive charges therein. By adjusting the position of the acceleration electrode and the position of the insulator, the emergency electrons cannot reach the acceleration electrode. The positive charge supplied from the power supply to the acceleration electrode acts on the negative charge retained by the electrons, thereby accelerating the emergency electrons. When the emergency electrons are accelerated and retained sufficiently, the repulsive force from the negative charge accumulated in the electron absorption collector is overcome, so that the electrons approach the electron absorption collector. When electrons approach the electron absorption collector sufficiently, positive charges appear on the surface of the electron absorption collector by electrostatic induction. Since positive charges appearing on the surface of the electron-absorbing collector and negative charges held by the electrons are attracted by a force based on Coulomb's law, the emergency electrons collide with the positive charges appearing on the surface of the electron-absorbing collector and are collected by the electron-absorbing collector. do. The electron absorption collector which collected the electron has a negative charge accumulated, and can use this as electrical energy. On the other hand, in order to prevent leakage of negative charges accumulated in the electron absorption collector, the electron absorption collector is disposed inside the insulator.

There is the following patent document as power generation which does not use fossil fuels, such as coal and petroleum.

[Patent Document 1]: Japanese Patent No. 3449623 (Name of the Invention: Photovoltaic Energy Conversion Device, Inventor: Noka Akamatsu, same as the inventor)

In this patent document 1, electric power generation is performed using the sunlight which is an energy source external to an apparatus. That is, Patent Document 1 describes a power generation method by receiving sunlight into a material, converting it into thermal energy, thereby releasing hot electrons from the heated material, and converting thermal energy into electrical energy using the thermal electron emission. have. In conclusion, Patent Document 1 merely converts external energy into electrical energy, and since the method of Patent Document 1 does not conform to the above [Definition of Power Generation] described above, it is a simple energy conversion device, and essentially with the present invention. different. On the other hand, there is a drawback that the solar energy converter of Patent Document 1 cannot be used at night or in rainy days when solar light is almost lost. However, the field effect generator of the present invention does not require external energy. That is, since the kinetic energy obtained by accelerating electrons in the field effect generator of the present invention is converted into electrical energy, it can be said to be a true generator.

[Patent Document 2] Japanese Unexamined Patent Publication No. 2003-189646 (Name of Invention: Photovoltaic Energy Conversion Device and Photovoltaic Energy Conversion System, Inventor: Noka Akamatsu, same as the inventor)

In Patent Document 2, power generation is also performed using sunlight, which is an energy source external to the device. That is, Patent Document 2 relates to an energy conversion device for converting sunlight into electrical energy and a system thereof. As a conclusion, Patent Document 2 is inconsistent with the above-described [definition of power generation], and thus, a simple energy conversion device is described and is essentially different from the present invention. There is a drawback that the solar energy converter of Patent Document 2 cannot be used at night or in rainy days when solar light is almost lost. However, the field effect generator of the present invention does not require external energy. That is, since the kinetic energy obtained by accelerating electrons in the field effect generator of the present invention is converted into electrical energy, it can be said to be a true generator.

[Patent Document 3] Japanese Unexamined Patent Publication No. 2003-250285 (name of the invention: one of the heat generating device, the heat generating system, and the inventor is the same as the inventor of the present invention (Nakamatsu Norio))

In this patent document 3, in order to take out electrical energy, a large amount of thermal energy is thrown in. In other words, the present invention merely suggests an apparatus capable of converting thermal energy into electrical energy. Patent document 3 is made with the technique regarding the energy conversion apparatus which converts heat energy into electrical energy. In this patent document 3, electric power generation is performed using the heat energy source external to an apparatus. As a conclusion, Patent Document 3 does not conform to [Definition of Power Generation] described above, and therefore, a simple energy conversion device is described and is essentially different from the present invention. The thermal energy is obtained by burning fossil fuels such as coal and petroleum, but when the thermoelectric generator of Patent Document 3 is used, the harmful effects such as carbon dioxide generation and global warming are inevitable. However, the field effect generator of the present invention does not require external energy entirely. That is, since the kinetic energy obtained by accelerating electrons in the field effect generator of the present invention is converted into electrical energy, it can be said to be a true generator. Moreover, since it turned out that power generation is very difficult to implement even if the method of patent document 3 is applied, examination request of patent document 3 was not carried out and was abandoned.

[Patent Document 4] Japanese Unexamined Patent Publication No. 2003-258326 (Inventor: Noka Akamatsu, same as the inventor)

In this patent document 4, in order to take out electrical energy, a large amount of thermal energy is thrown in. Patent document 4 is made | formed about the energy conversion apparatus which converts heat energy into electrical energy. In the said patent document 4, electric power generation is performed using the heat energy source external to an apparatus. As a conclusion, Patent Document 4 does not conform to [Definition of Power Generation] described above, and therefore is described with respect to a simple energy conversion device and is essentially different from the present invention. Although thermal energy is obtained by burning fossil fuels, such as coal and petroleum, the harmful effects, such as a carbon dioxide generation and global warming, are inevitable when the thermal power generation apparatus of patent document 4 is used. However, the field effect generator of the present invention does not require any external energy. That is, since the kinetic energy obtained by accelerating electrons in the field effect generator of the present invention is converted into electrical energy, it can be said to be a true generator.

[Patent Document 5] Japanese Unexamined Patent Publication No. 2004-140288 (Inventor: Noka Akamatsu, same as the inventor)

In this patent document 5, in order to take out electrical energy, a large amount of thermal energy is thrown in. Patent document 5 is made with the technique regarding the energy conversion apparatus which converts heat energy into electrical energy.

In this patent document 5, electric power generation is performed using the heat energy source external to an apparatus. As a conclusion, Patent Document 5 does not conform to [Definition of Power Generation] described above, and therefore, a simple energy conversion device is described and is essentially different from the present invention. Although thermal energy is obtained by burning fossil fuels, such as coal and petroleum, the harmful effects, such as carbon dioxide generation and global warming, which are inevitable using the thermal power generation apparatus of patent document 5 are inevitable. However, the field effect generator of the present invention does not require any external energy. That is, since the kinetic energy obtained by accelerating electrons in the field effect generator of the present invention is converted into electrical energy, it can be said to be a true generator.

[Patent Document 6]: JP49-67594A, (Inventor: Toshio Hosokawa, 1974)

In patent document 6, in order to take out electrical energy, a large amount of thermal energy is thrown in. That is, these inventions are merely proposing the apparatus which can convert thermal energy into electrical energy. Strictly speaking, the present invention describes an energy conversion device capable of converting thermal energy into electrical energy. However, the present invention does not propose an energy conversion device, but proposes a true electric energy generating device. In patent document 6, electric power generation is performed using the heat energy source external to an apparatus. As a conclusion, Patent Document 6 does not conform to [Definition of Power Generation] described above, and therefore is described with respect to a simple energy conversion device, and is essentially different from the present invention. Although thermal energy is obtained by burning fossil fuels, such as coal and petroleum, the harmful effects, such as carbon dioxide generate | occur | produced and global warming advance, cannot be avoided when the thermal power generation apparatus of patent document 6 is used. That is, the power generation device of the present invention is not a simple energy conversion device, but can perform true power generation. In the present invention, since the carrier is injected and the emission is performed by the effect of the electric field without using any external energy, the electric energy obtained by generating the electric energy inside the apparatus can be used for the electrical load. The invention device is fundamentally different from the power generation device of the present invention.

[Patent Document 7]: Japanese Patent Application Laid-Open No. 11-510307

In the invention of Patent Document 7, a field electron emission material and a field electron emission device are disclosed. However, what has been disclosed in the field electron emission device is a device using the emission electron itself, such as a discharge device, an electron gun, a display, etc., and the technical idea of using it for power generation has not been described at all. On the other hand, the present invention is not against the law of conservation of energy. Strictly describing the law of conservation of energy should be called the law of conservation of energy. In other words, when energy conversion is performed before and after the energy is converted into new energy, if the loss is also included, the increase and decrease of the total amount of energy is not before or after the conversion. To be established. In other words, "energy conservation law in energy conversion" means that the total amount of energy before and after the conversion is preserved when the energy already generated is converted into other forms of energy. However, it is clear that the law of energy conservation does not apply when generating new energy by using the wave nature and mobility of the electron as in the present invention. For example, the energy conservation law in energy conversion does not apply to a large amount of energy generated from uranium in nuclear power generation because it is not a simple energy conversion. In addition, the "energy conservation law regarding energy conversion" cannot be applied also to the energy generated inside the sun and also generated by nuclear fusion. In addition, the present inventor has proposed a method disclosed in the following patent document as a power generation device capable of obtaining electrical energy even when there is little supply of energy from the outside.

[Patent Document 8]: WO2007 / 116524 (PCT / JP2006 / 307607) (name of invention: field emission generator, inventor: Noka Akamatsu, same as the inventor)

[Patent Document 9]: WO2007 / 122709 (PCT / JP2006 / 308277) (Name of the invention: Linearly accelerated power generation device, inventor: Noka Akamatsu, same as the inventor)

[Patent Document 10]: WO2007 / 135717 (PCT / JP2006 / 310026) (Invention name: field emission generation device, inventor: Noka Akamatsu, same as the present inventor)

[Patent Document 11]: PCT / JP2006 / 317778 (Name of the Invention: Electronic Power Generator, Inventor: Noka Akamatsu, Same as the Invention)

The inventors of [Patent Document 8], [Patent Document 9], [Patent Document 10] and [Patent Document 11] mentioned above are all the same as the inventors of the power generation apparatus of the present invention. These patent documents describe the emission of electrons and the collection of emitted electrons. However, in the methods proposed in [Patent Document 8], [Patent Document 9], [Patent Document 10] and [Patent Document 11], the number of electrons emitted when the electric field is weak is small, and when the electric field is strong, It became difficult to collect, the electron leaked by the positive voltage of an external power supply, and there were many losses, and it was difficult to generate | generate a favorable efficiency. In order to overcome this drawback, the inventor of the present invention studies further, and proposes the power generation apparatus of the present invention. [Patent Document 8], [Patent Document 9], [Patent Document 10] and [Patent Document 11] do not use [Power Generation Condition 1], [Power Generation Condition 2] and [Power Generation Condition 5] described above. That is, [power generation condition 1] injection of a carrier is performed between two different substances. [Development Condition 2] Sliding and emission are performed on the electron. [Development Condition 5] Positive and negative charges move to the energy accumulator.

Therefore, even when the methods described in [Patent Document 8], [Patent Document 9], [Patent Document 10] and [Patent Document 11] are applied, electrons are hardly emitted in a vacuum, so it is impossible to realize a practical power generation device. . The reason for this is that, as the present invention pointed out, by using the power generation conditions according to [3] of [power generation condition 1], [power generation condition 2] and [power generation condition 5], the emission amount of electrons due to the effect of the electric field is greatly increased. The power generation condition of this paragraph 3 is not described in the past literature at all. In order to perform field effect power generation, it is necessary to separate electrons from the material. It is possible to emit electrons using the effect of an electric field, but usually the amount of electrons emitted is small. Even when electrons leave the material and are released in a vacuum, the electrons need to have sufficiently large kinetic energy. Electrons accelerate and move on the surface of the material to obtain sufficient kinetic energy, thereby overcoming the electrostatic force following Coulomb's law and being released out of the material. If the injected electrons are accelerated at the surface of the material and the electrons are released from the material after obtaining sufficient kinetic energy, the energy required for that is less and efficient. The movement of electrons as they accelerate at the surface of the material, and later they are emitted in vacuum, is called sliding-imitation. When a plurality of electrodes are placed in the insulator 8 disposed on the surface of the channel forming material 2 and the positive charge is supplied to the electrodes, the electrons injected into the channel forming material 2 are accelerated to receive the sliding emission of the electrons. This is carried out. The electrons acquire the kinetic energy by carrying out the sliding-imposition, and then the electrons are completely released from the material so that the electrons are imposed in vacuum. At this time, since the electrode is in the insulator, there is almost no current flowing from the electrode, so the loss of energy is almost zero. Therefore, in the present invention, power generation with good efficiency can be performed by using the electron sliding emission. In addition, in the methods described in [Patent Document 8], [Patent Document 9], [Patent Document 10] and [Patent Document 11], the power generation efficiency was not good because of the disadvantages described below. In other words, in power generation using electrons, electrons in the carrier output material are realized by moving the electron collection collector by means of emission. The former emission is divided into two types.

(1) abrupt emission

(2) Increase the kinetic energy possessed by the electron immediately before the emission. That is, pre-supply of energy to the electrons.

The patent literature on power generation published in the past does not increase the kinetic energy possessed by electrons by pre-supplying energy to the electrons immediately before the emission. In other words, no treatment was given to the electrons during the period in which the electrons existed inside the carrier output material. Therefore, since electrons in the material abruptly emit by the electric field, the number of electrons to emit is extremely small, and thus practical development cannot be performed. However, as in the field effect development of the present invention, the kinetic energy possessed by the electrons is increased by pre-supplying energy to the electrons immediately before the emission, thus increasing the number of electrons that emit. It becomes possible, and the power generation output increases and practicality increases. To overcome this drawback, a channel forming material is disposed between the carrier output material and the electron collecting collector, and electrons are easily injected from the carrier output material into the channel forming material by the action of the injection electrode. In addition, the sliding electrode is disposed, the kinetic energy retained by the electrons inside the channel forming material is increased, and the potential barrier is passed through the quantum mechanical tunnel effect by the action of the tunnel electrode. The action of the emission electrode causes the electrons to be emitted in the vacuum from within the material. In addition, since the kinetic energy retained by the electrons is increased by the electrons being accelerated by the action of the electrons to accelerate the electrons, it becomes possible to reach an electron absorption collector having a high potential barrier, Succeeded in increasing the number. As a result, it becomes possible to increase the power generation output. However, in the methods described in [Patent Document 8], [Patent Document 9], [Patent Document 10] and [Patent Document 11], energy pre-supply is performed on the electron immediately before the emission. Since no thing was described at all, the number of electrons to emit is small and the power generation efficiency is not good. In addition, in the methods described in [Patent Document 8], [Patent Document 9], [Patent Document 10] and [Patent Document 11], when collecting electrons, the coulomb is between the electrons accumulated up to that point and the electrons newly accumulated. The repulsive force under the law of could not increase the charge accumulated. That is, the energy accumulator proposed by this invention did not exist in the conventional apparatus. It is possible to pair the positive electrode of the external power supply with the electrons to be collected by the conventional method. However, in this method, when the pair of charges held by the carrier and the charge having the opposite sign is solved and used as electrical energy, Since positive charges are supplied from the power supply, power generation losses increase and it is difficult to improve power generation efficiency. In the present invention, an energy accumulator is introduced, and a pair of electrons and holes is formed in the energy accumulator, so that almost no energy supplied from an external power source is lost. Therefore, when power generation is performed using the apparatus of the present invention, energy loss is almost eliminated and power generation with good efficiency can be performed. In addition, in order to improve power generation efficiency, an acceleration channel is set in the present invention. In the acceleration channel, a carrier acceleration device is applied to accelerate the carrier. While accelerated carriers break through the potential barrier and go through an irreversible process, usable electrical energy is created, but past patent literature does not suggest how to accelerate the carrier in the acceleration channel before crossing the potential barrier, There is a drawback that the efficiency could not be improved. In addition, when electrons are accelerated by the effect of an electric field, the kinetic energy held by the electrons increases. By the way, in the power generation system described in the patent documents published in the past, there was no concept of converting the kinetic energy possessed by the electrons into electrical energy. However, as the kinetic energy held by the electrons increases, the speed at which the electrons fly out increases. Therefore, when high-speed electrons collide with the material, the kinetic energy retained by the electrons is lost, thereby raising the temperature of the material. That is, the kinetic energy held by the emergency electrons is converted into the kinetic energy of electrons in the material when the electrons collide with the material. Thus, the kinetic energy possessed by the electrons in the material in which the electrons collide increases. Converting and using the kinetic energy possessed by the electrons in the material into electrical energy has not been carried out in the conventional power generation apparatus. However, since energy is always available by converting, the present invention indicates that the kinetic energy held by the colliding electrons can be finally used as electric energy.

Japanese Patent No. 3449623 Japanese Laid-Open Patent Publication No. 2003-189646 Japanese Laid-Open Patent Publication No. 2003-250285 Japanese Laid-Open Patent Publication No. 2003-258326 Japanese Laid-Open Patent Publication No. 2004-140288 JP 49-67594A Japanese Patent Application Publication No. 11-510307 WO2007 / 116524 WO2007 / 122709 WO2007 / 135717 PCT / JP2006 / 317778

In [Patent Document 1], [Patent Document 2], [Patent Document 3], [Patent Document 4], [Patent Document 5] and [Patent Document 6], in order to generate electricity, fossil fuels such as coal and petroleum and solar Use external energy such as light. Power generation using external energy cannot cope with the problem of depletion of fossil fuels and the destruction of the global environment. In addition, when solar energy is used, power generation cannot be performed at night or in rainy weather, and thus, it cannot be a main source of energy supply. In the field effect power generation of the present invention, power generation is realized without using an external energy source. Further, in [Patent Document 7], [Patent Document 8], [Patent Document 9] and [Patent Document 10], power generation without using an external energy source has been proposed by the present inventor. However, in [Patent Document 7], [Patent Document 8], [Patent Document 9] and [Patent Document 10], a method of directly emitting electrons in a substance in a vacuum using an electric field. In other words, the method of electron emission proposed in [Patent Document 7], [Patent Document 8], [Patent Document 9] and [Patent Document 10] is compared to takeoff of a plane and a rocket described above. Corresponds to. Therefore, the method of electron emission from a substance described in past patent documents is called abrupt emission because it emits electrons accidentally. That is, when electrons are emitted based on the abrupt emission method, the amount of electrons emitted is very small, and thus the power to be generated cannot be increased. The abrupt emission method is equivalent to a rocket takeoff method and requires a large amount of energy. However, if the sliding-imitation method, which is a method of taking off after the plane slides, is applied, it is possible to increase the number of electrons that are emitted even when a small amount of energy is supplied. Immediately before the emission, increase the kinetic energy held by the electrons. In other words, the pre-supply of energy to the electrons is a problem in the field effect development of the present invention. In the present invention, in order to overcome this problem, the carrier is pre-supply by using an injection electrode, a sliding electrode, a tunnel electrode, an emission electrode, and an acceleration electrode. When generating electric energy in electric field effect power generation, if the method of performing an abrupt emission of electrons in a material is employ | adopted, the amount of electron emission will be small and power generation efficiency will fall. However, if the kinetic energy is supplied to the electrons immediately before the electrons are subjected to the emission, the amount of electrons to be emitted increases, and the power generation efficiency is improved. That is, in order to improve the power generation efficiency of the field effect power generation, it is necessary to provide energy pre-supply to the electrons. There are three types of energy pre-supply methods described below.

(1) In the field effect power generation of the present invention, power generation is realized by moving a carrier using an electric field. When the carrier is accelerated by injecting the carrier from the carrier output material to the channel forming material and the carrier is accelerated by performing a sliding motion on the surface of the channel forming material, the kinetic energy of the carrier increases, thus increasing the number of carriers contributing to power generation. That is, by utilizing the action of the injection electrode and the sliding electrode, the number of carriers contributing to power generation is increased by performing energy pre-supply to the carriers in the period in which the carriers are confined in the material.

(2) In the field effect power generation of the present invention, the cascade method (or relay method) is adopted, and the kinetic energy held by the electrons emitted and accelerated in the past is supplied to the electrons to be subjected to the next emission (pre- By using a supply, the generated energy is used effectively.

There are two types of methods shown below.

(2.1) Direct Imitation Method

The direct emission method of electrons is also called secondary electron emission method. When electrons flying in a vacuum are called primary electrons and primary electrons collide with the secondary electron emission member, electrons are emitted from the secondary electron emission member by the kinetic energy held by the primary electrons.

The electrons emitted by the collision are called secondary electrons. If the kinetic energy possessed by the primary electrons is large, electrons are released from the material by colliding and discharging many secondary electrons, and the released electrons are collected in the electron absorption collector to increase the number of electrons contributing to power generation. Therefore, the power generation output is increased by the direct emission method of the former. That is, by applying the secondary electron emission method, the number of carriers contributing to power generation is increased by performing energy pre-supply to the electrons in the period in which the electrons are confined in the material.

(2.2) Indirect emission law of the former

The cathode of a vacuum tube (electron tube) includes a direct heat pipe and a heat radiating pipe. In the cathode direct-type vacuum tube, the cathode temperature is increased by flowing a current through the cathode. In the cathode heat dissipation type vacuum tube, a heater is used separately from the cathode, the current of the heater is increased by sending a current to the heater, and the temperature of the cathode is indirectly increased by transferring the heat of the heated heater to the cathode. When the electrons which have been accelerated and accelerated in the vacuum collide with the electron absorption collector, the kinetic energy held by the electrons is converted into thermal energy by the collision. The heat generated by the collision of electrons is conducted to the material to which the electrons to be subjected to the next emission belong. That is, the temperature of the carrier output material, and the channel forming material in contact therewith, rises. Therefore, the kinetic energy of the electrons present in the carrier output material is increased. Thus, the number of electrons injected from the carrier output material into the channel forming material increases. In addition, the kinetic energy of the electrons present in the channel forming material increases. The increase in the kinetic energy of the electrons contributes to the increase in the power output. In the N stage cascade system, the thermal energy of the electron absorption collector of the first stage is conducted to the carrier output material and the channel forming substance of the second stage, and the thermal energy is transferred even after the third stage, and the electron collection collector of the N stage Heat energy is transferred until. That is, when the cascade method is applied, the number of electrons contributing to power generation is increased by pre-supplying electrons in a period in which electrons are confined in the material. However, a method of feeding back the thermal energy generated in the electron collecting collector in the Nth stage to the carrier output material and the channel forming material in the first stage belongs to the thermal feedback method described below.

(3) In the case of adopting the thermal feedback method in the field effect generation of the present invention, the thermal energy generated when the electrons collide with the electron-absorbing collector is disposed by contacting the electron-absorbing collector with the thermal conductor. By feeding back, the kinetic energy of the accelerated electrons is pre-supply to the electrons to be subjected to the next emission. When both the cascade method and the thermal feedback method of the N stage are applied, the temperature of the carrier output material and the channel forming material of the first stage, the second stage, ??? the N stage, rises due to the collision of the emergency electrons, and the electrons of the N stage The thermal energy generated in the absorption collector is fed back to the carrier output material and the channel formation material in the first stage, thereby making it possible to realize a very high efficiency power generation device. That is, by applying the thermal feedback method, energy can be pre-supplyed to the electrons in the period in which the electrons are constrained in the material, thereby increasing the number of electrons contributing to the power generation and improving the power generation efficiency. In the field effect power generation of the present invention, by applying the energy pre-supply described above, it is described below that the power generation efficiency is significantly improved over all the power generation methods proposed in the past.

The problem to be solved by the field effect generator of the present invention is shown below.

(1) In the field electric power generation device of the present invention, by pre-supplying energy to the carrier, the number of electrons contributing to the injection increases, and the power generation output of the field effect power generation device of the present invention is increased.

(2) In the field effect power generation device of the present invention, since energy is pre-supplyed to the electrons based on the effect of the electric field, the number of electrons contributing to the emission increases and the power lost by the electric field generation is also small. It becomes quantity and raises generation efficiency.

(3) In the field effect power generation device of the present invention, by applying the thermal feedback method, energy is supplied to the electrons, thereby making it lighter, smaller and more efficient.

The characteristic of the field effect power generation device of this invention is shown below.

(1) In the electric field electric power generation device of the present invention, by pre-supplying electrons, the number of electrons involved in the emission increases. Therefore, the power generation output of the field effect generator of the present invention is large.

(2) In the field effect power generation device of the present invention, since energy is pre-supplyed to the electrons based on the effect of the electric field, the power lost by the generation of the electric field becomes small and the power generation efficiency is increased.

(3) In the field effect power generation device of the present invention, since electric energy is supplied to the electrons by applying the thermal feedback method, it is light in weight and small in size, so that high efficiency power generation can be performed.

(4) In the field effect power generation device of the present invention, a carbon-based material, an insulator, and a vacuum container are manufactured using glass or stainless steel plate, and since there is almost no deterioration part, they are durable and can be used for a long time. This is long.

(5) In the field effect power generation device of the present invention, since the device can be manufactured simply by mounting the field generating electrode, the carbon member, and the insulator in the container, the structure is simple and easy to manufacture.

(6) Even if a large amount of the field effect power generation device of the present invention is used, since no special substance is used, it is not a factor that destroys the environment.

(7) In the field effect power generation device of the present invention, since the electrode is disposed in the glass container, only the deterioration of the member that emits electrons is a component that needs to be replaced, so that it can withstand long-term use even with a small maintenance cost.

When the field effect power generation device of the present invention is compared with a conventional power generation device, the field effect power generation device of the present invention has the following effects.

(1) In the conventional power generation apparatus, when the electrons are emitted in the vacuum, abrupt emission is performed, so that the number of electrons to be emitted is small. Therefore, the power generation output of the conventional power generation device is a small amount. However, in the electric field generating apparatus of the present invention, the number of electrons involved in the emission increases by supplying energy to the electrons. Therefore, the power generation output of the field effect generator of the present invention is improved.

(2) In the field effect power generation device of the present invention, since the energy is supplied to the electrons based on the effect of the electric field, the power lost by the generation of the electric field becomes small and the power generation efficiency is increased.

(3) In the field effect power generation device of the present invention, since the electric power is supplied to the electrons by applying the thermal feedback method, it becomes light and small, so that high efficiency power generation can be performed.

(4) In the field effect power generation device of the present invention, a carbon-based material, an insulator, and a vacuum container are manufactured using glass or stainless steel plate, and since there is almost no deterioration part, they are durable and have a long service life.

(5) In the field effect power generation device of the present invention, since the device can be manufactured simply by mounting the field generating electrode, the carbon member, and the insulator in the container, the structure is simple and the production is easy.

(6) Even if a large amount of the field effect power generation device of the present invention is used, no special substance is used, and therefore, it does not cause environmental damage.

(7) In the field effect power generation device of the present invention, since the electrode is disposed in the glass container, only the deterioration of the member that emits electrons is a replaceable part, and therefore it can withstand long-term use even with a slight maintenance cost.

By the above effect, it is thought that the field effect power generation device of this invention is very practical.

[Effect of invention 1]

According to the field effect generator according to claim (1), the carrier output material 1 and the channel forming material 2 on the substrate 19 are schematically shown in FIG. 11 as a block diagram of the main part of the present invention. Place it. The carrier output material 1 and the channel forming material 2 are electrically connected, an insulator 8 is disposed on the front surface or a part of the surface of the channel forming material 2, and the electrode of the carrier acceleration device in the insulator 8. Place 60. The carrier accelerator 3 is constituted by applying a voltage to the electrode 60 of the carrier accelerator using a power source, and on the insulator 8 side of the channel forming material 2 by the action of the carrier accelerator 3. Form part of the acceleration channel 9 on the surface. Hereinafter, the details of the carrier accelerator 3 will be described. Fig. 12 shows a block diagram of the inside of a carrier acceleration device in the field effect generation of the present invention. The carrier accelerator 3 is constituted by a power supply 30, an electrode 60 of the carrier accelerator and an insulator 8. The electrode 60 of the carrier accelerator is arranged in the insulator 8. The power source 30 and the electrode 60 of the carrier accelerator are electrically connected, and positive or negative charges are supplied from the power source 30 to the electrode 60 of the carrier accelerator.

Carriers present in the carrier output material 1 are injected from the carrier output material 1 into the channel forming material 2 by the effect of the electric field generated by the electrode 60 of the carrier accelerator. Carriers injected into the channel forming material 2 accelerate and move in the acceleration channel 9. That is, the carrier performs sliding movement, and the carrier acquires kinetic energy. The carrier having obtained sufficiently large kinetic energy can pass through the high potential barrier present in the irreversible process generator 4 by the quantum mechanical tunnel effect. Finally, the carrier moving at high speed is collected in the carrier absorbing collector 28 disposed at the end of the acceleration channel 9. The carrier collected by the carrier absorption collector 28 is input to one input terminal of the energy accumulator 15, and the anti-carrier remaining in the carrier output material 1 is connected to the other input terminal of the energy accumulator 15. By being input, the carrier and the anti-carrier form a pair and accumulate in the energy accumulator 15, so that the movement of the carrier and anti-carrier, which is injected later in time, is not prevented from being accelerated and thus, the energy accumulator 15 The amount of energy accumulated in) increases. The energy accumulator 15 is connected to the electrical load 5 in parallel, whereby the carrier and the anti-carrier are supplied to the electrical load 5. As a result, electrical energy obtained by the generation of carriers and anti-carriers is consumed at the electrical load 5. Application of the integrated circuit technology makes it easy to fabricate a device for injecting a carrier, so that the field effect power generation device of the present invention can generate electrical energy with better efficiency than a conventional power generation device. In addition, in the field effect power generation device of the present invention, since both the carrier and the anti-carrier move to the energy accumulator 15 at an early stage, electrical energy can be accumulated in the energy accumulator 15, so that energy generation efficiency is improved. . The energy accumulator 15 will be described in detail below. 13 shows an energy accumulator 15. The same figure shows the positive charge input / output unit 16 of the energy accumulator 15 and the negative charge input / output unit 17 of the energy accumulator 15. The energy input mode of the energy accumulator 15 is shown in FIG. 14, where the energy accumulator 15 has an energy input mode and an energy output mode. In the energy input mode, positive charges are input to the positive charge input / output unit 16 of the energy accumulator 15. A representative example of a positive charge is a hole. In the energy input mode, negative charges are input to the negative charge input / output unit 17 of the energy accumulator 15. Representative examples of negative charges are electrons.

The positive and negative charges input to the energy accumulator 15 may be converted to and stored in a different energy than the case where a dipole is formed and accumulated. In other cases, the energy may be an electrochemical ion. Examples of electrochemical conversion include chargeable cells and conversion to hydrogen. It is converted into hydrogen and accumulated in the energy accumulator 15, and hydrogen can be converted into electrical energy and output by applying a fuel cell or the like. If the carriers obtained by the power generation device of the present invention remain in the collector, the carriers generated later will prevent the carriers from reaching the collector. Therefore, it is necessary to send the carriers reaching the collector to the energy accumulator. When there are few carriers remaining in the collector, the carrier which next reaches the collector can reach the collector without being disturbed and can be absorbed by the collector.

15 shows the energy output mode of the energy accumulator 15. In the case of outputting the energy stored in the energy accumulator 15, the carrier having positive charge is output from the positive charge input / output unit 16, and the carrier having negative charge is output from the negative charge input / output unit 17. The output positive charge carrier and negative charge carrier are neutralized by recombining the positive charge carrier and the negative charge carrier in the electrical load 5, and electrical energy is supplied to the electrical load at that time.

A monopole is a monopole, and a dipole is a dipole. For example, when electrons are absorbed by a conductive material, they become monopoles, and two conductive materials are electrically insulated from each other, and positive and negative charges are separately accumulated in the two conductive materials, and both are disposed at close distances. The state is considered to form a dipole. As a specific example of the monopole, as shown in FIG. 16, a case where a large number of carriers having negative charges are absorbed in the conductive material will be considered. A lot of negative charges are stored in the conductive material, and the negative potential is in a high state. Therefore, the electric field of the direction shown by the arrow in the figure exists in the vicinity of an electroconductive substance.

When the electron 50 approaches a conductive material having a large amount of negative charge, a repulsive force governed by Coulomb's law is applied between the negative charge in the conductive material and the negative charge of the electron 50, and the electron 50 approaches the conductive material. Can not. In order for the electron 50 to approach a conductive material that retains a large number of negative charges, the electron 50 needs to retain a lot of kinetic energy. For that purpose, it is necessary to accelerate the electron 50 in the acceleration channel 9 until it becomes high speed. To accelerate at high speeds, a strong electric field is required, and a high voltage is required to generate a strong electric field. When a high voltage is applied to the electrode, charge is leaked via the insulator 8 between the positive electrode and the negative electrode. The leakage charge needs to be replenished from an external power supply. In other words, power consumption increases in an external power source. When the external power loss increases, the power generation efficiency of the entire power generation system is lowered, and the practicality becomes less. Therefore, supplying a voltage higher than necessary from an external power source is not preferable because of the increased loss. Therefore, in order to establish an efficient power generation system using a relatively low voltage, it is necessary to avoid leaving the generated electricity in a monopole state. For this purpose, the carrier generated by the power generation device in a dipole state is preserved to improve the power generation efficiency.

As an example of a dipole, as shown in Fig. 17, a state in which positive and negative charges are very close to exist is considered. In practice, as shown in FIG. 18, negative charges are accumulated in the negative charge accumulating conductor 13, positive charges are accumulated in the positive charge accumulating conductor 14, and an insulator 8 is disposed therebetween so that positive and negative charges are coupled to each other. Stop doing it. 19 illustrates the case where the electron 50 approaches the dipole. In the same figure, the electric field lines starting from positive charges and ending with negative charges are indicated by curved arrows. Since the positive and negative charges are very close together, almost all electric field lines are in the vicinity of the positive and negative charges, and the electric field between the positive and negative charges stays in the local region where positive and negative charges exist. Therefore, even when electrons approach the negative charge in the dipole state from the outside, there is almost no electric field on the electrons approaching from the dipole. In other words, the presence of negative and positive charges in the dipole state is almost neutral when viewed from a remote location, and exhibits little force following Coulomb's law to the outside. Therefore, when the electron 50 approaching the dipole from the outside is canceled by the coulomb repulsive force generated in the charge of the same sign due to the effect of accessing the positive and negative charges, the kinetic energy of the electron 50 is small. In addition, it becomes possible to approach negative charges. When the electrons 50 having negative charges sufficiently approach the negative charge accumulating conductor 13, positive charges appear on the surface of the negative charge accumulating conductor 13 due to an electric induction phenomenon, and the positive charges appearing and electrons approaching from the outside An attraction force in accordance with Coulomb's law acts between and electrons approaching from the outside collide with and are absorbed by the negative charge accumulating conductor 13.

In view of the above, in the dipole input mode, when the positive and negative charges generated by the power generation are in the dipole state, a new carrier is supplied to the conductive material via the acceleration channel 9, and the positive and negative charges of the dipole are reduced. It becomes possible to do a lot. As the amount of positive and negative charges accumulated increases, the voltage between the positive charge accumulating conductor 14 and the negative charge accumulating conductor 13 of the dipole increases. In the output mode of the dipole, when the electrical load 5 is connected to the positive and negative poles of the dipole, the positive charge accumulated in the positive charge accumulating conductor 14 and the negative charge accumulated in the negative charge accumulating conductor 13 are applied to the electric load 5. Is recombined, neutralized and extinguished. At this time, electric current is supplied and consumed by the flow of electric current through the electrical load. Since the total amount of current flowing through the electrical load is the amount of positive and negative charges accumulated, a large amount of positive and negative charges can be accumulated to produce a large amount of generated power. When the dipole has an input mode and an output mode, the dipole is called a dipole capable of separating positive and negative charges. In the power generation apparatus of the present invention, the generation efficiency can be improved by using a detachable dipole. In addition, as a dipole that is difficult to separate, there is an example in which atoms are formed by disposing electrons having negative charges around an atomic nucleus having positive charges. It is also energy difficult to separate electrons and protons from atoms. Experiments show that when negative charges generated by power generation accumulate in a monopole, the potential of the monopole increases rapidly and reaches thousands of volts in a short time. However, since the amount of charge accumulated in the monopole is very small, when the charge is released via the electrical load 5, the charge accumulated by the flow of a small current disappears. In conclusion, in the power generation system using monopole, the voltage obtained is high but the current obtained is small. That is, since the power is the product of the voltage and the current, the power generation of the monopole method is very practical because the large power cannot be obtained. Since the inventions related to the conventional power generation are all monopole systems, there are few opportunities to be used practically. However, since the present invention is a dipole system, it is possible to supply a sufficient current and to ensure very high practicality. In addition, in the field effect power generation device of the present invention, it is not necessary to supply the carrier with energy for penetrating and breaking through the large work function required to emit electrons in the vacuum, and only the energy necessary for injection performed inside the material. Supply to the carrier by the electric field effect. As a result, since the kinetic energy of a carrier can be enlarged, it becomes possible to generate electricity by converting the kinetic energy of a carrier into electrical energy. The electric field is generated by placing in the insulator 8 and supplying charge to the electrodes. Since most of the current leaked from the electrode is zero, large power is obtained in a state where the power supplied from the external power source is very small, so that the power generation efficiency of the field effect generator of the present invention is very high. That is, the energy supplied from an external power source becomes very small, and as a result, the electric power generation efficiency of the field effect generator of this invention becomes favorable, and it can be said that this apparatus is practical enough.

[Effect of invention 2]

According to the field effect power generation device according to claim (2), in addition to the action and effect by the configuration described in claim (1) above, the carrier acceleration device includes a plurality of power sources and a plurality of electrodes, The electrodes are electrically connected to the plurality of power sources, and the electrodes of the plurality of carrier accelerators are disposed through an insulator around the channel forming material to form an acceleration channel. An electric field generated by the action of the voltage applied to the electrode of the carrier acceleration device acts on the carrier, and the carrier is injected from the carrier output material to the channel forming material. 20 shows a case in which the carrier acceleration device is constituted by a plurality of electrodes in the field effect power generation of the present invention. As shown in the figure, the insulator 8 is disposed on the upper surface of the channel forming material 2, and the first electrode 61 of the carrier accelerator and the second electrode of the carrier accelerator are disposed in the insulator 8. 62). In the figure, the power source 30 is an external direct current power source, but is drawn near the electrode in the drawing. 21 illustrates a case where an acceleration channel is formed between the channel forming material and the insulator. When a voltage is applied to the first electrode 61 of the carrier accelerator and the second electrode 62 of the carrier accelerator by using the power source 30, the electric line of force shown in Fig. 21 is generated. An acceleration channel 9 is formed near the boundary between the channel forming material 2 and the insulator 8. The injected carrier is in the acceleration channel 9 and also travels the surface of the channel forming material 2. The carrier is accelerated in the acceleration channel 9 by the effect of the electric field generated by the first electrode 61 of the carrier accelerator and the second electrode 62 of the carrier accelerator. In the acceleration channel 9, the carrier is accelerated by the effect of the electric field so that the carrier acquires kinetic energy. Therefore, based on the kinetic energy acquired by the carrier injected into the channel forming material, it is possible for the carrier to pass through the irreversible process generating unit by the quantum mechanical tunnel effect, and the carrier absorption collector is more than the conventional power generation method proposed in the past. The number of carriers to be collected increases. The carrier collected in the carrier absorbing collector is input to one input terminal of the energy accumulator, and the anti-carrier remaining in the carrier output material is input to the other input terminal of the energy accumulator so that the carrier and the anti-carrier form a pair. Therefore, since the acceleration and movement of the carrier and the anti-carrier injected later in time are not disturbed by accumulating in the energy accumulator, the amount of energy accumulated in the energy accumulator increases. By connecting the energy accumulator in parallel to the electrical load, the carrier and the anti-carrier are supplied to the electrical load. Thus, electrical energy generated by the carrier and anti-carrier is consumed at the electrical load. Injecting the carrier is easy with integrated circuit technology. In conclusion, in the field effect power generation device of the present invention, since the carrier is accelerated in the acceleration channel, the energy loss consumed in the acceleration channel is determined to be nearly zero by disposing the electrode in the insulator, and the efficiency is better than that of the conventional power generation device. It is possible to generate electrical energy. If a plurality of electrodes of the carrier accelerator 3 are also arranged using a plurality of power sources for generating an electric field, the kinetic energy held by the electrons increases, the generated power increases, and the power generation efficiency also improves. At this time, a plurality of batteries can be used as the plurality of power sources. It is also possible to generate | occur | produce a some power supply by the converter from alternating current to direct current using a transformer and a rectifier element. In addition, by applying the voltage generated in the field effect generator of the present invention to the parallel connection of a plurality of capacitors, a high voltage is obtained by charging all of the plurality of capacitors at once and connecting the plurality of charged capacitors in series. By applying a high voltage generated by the series connection of the capacitors to the electrodes, it becomes possible to generate an electric field, and it is possible to cause the carrier to accelerate and slide in the field effect generator of the present invention using the generated electric field. .

[Effect of Invention 3]

According to the field effect power generation device according to claim (3), in addition to the action and effect by the configuration described in claim (1) above, an N-type semiconductor is used as a carrier output material and a P-type semiconductor is used as a carrier input material. In this case, the PN junction is formed by electrically connecting the N-type semiconductor and the P-type semiconductor. A carrier accelerator is constituted by arranging an insulator on the front surface or a part of the surface of the P-type semiconductor, arranging the electrode of the carrier accelerator in the insulator, and applying a voltage to the electrode of the carrier accelerator using a power source. A portion of the acceleration channel is formed on the surface of the insulator side of the P-type semiconductor by the action of. In FIG. 22, the carrier output material 1 shows the operation of the carrier in the vicinity of the channel forming material 2. The carrier output material 1 is arranged in electrical connection with the channel forming material 2. In the case where the N-type semiconductor 11 is used as an example of the carrier output material 1, the N-type semiconductor 11 is heavily doped because impurities are heavily doped. When the P-type semiconductor 10 is used as an example of the channel forming material 2, the P-type semiconductor 10 and the N-type semiconductor 11 form a PN junction. The positive potential terminal of the first power source 31 is connected to the first electrode 61 of the carrier accelerator, and the negative potential terminal of the first power source 31 is connected to the carrier output material 1. An electric field formed by the carrier accelerator 3 is generated between the first electrode 61 of the carrier accelerator and the carrier output material 1 (the N-type semiconductor 11). The carrier is injected from the carrier output material 1 into the channel forming material 2 by the generated electric field. In the example of forming the PN junction, electrons are injected as carriers. The injected carrier performs a sliding movement in the acceleration channel 9 and the carrier is accelerated so that the carrier acquires large kinetic energy. The electric field generated by the carrier accelerator 3 determines the direction and magnitude of the movement of the carrier. The Coulomb force 81 acting on the carrier by the electric field is represented by a vector. The positive potential terminal of the second power source 32 is connected to the second electrode 62 of the carrier accelerator, and the negative potential terminal of the second power source 32 is connected to the carrier output material 1. An electric field is generated between the second electrode 62 of the carrier accelerator and the carrier output material 1. The direction and magnitude in which the carrier moves by the electric field is represented by the Coulomb force 81 acting on the carrier. The coulomb force 81 acting on the carrier is a vector. The Coulomb force 81 acting on the two carriers shown in the figure is a vector, and when they are synthesized, they become a composite vector 82. Both the first electrode 61 of the carrier accelerator and the second electrode 62 of the carrier accelerator are arranged in an insulator. A representative example of the insulator 8 is silicon dioxide. A case where the carrier output material 1 is the N-type semiconductor 11 and the channel forming material 2 is the P-type semiconductor 10 and the PN junction is formed will be discussed below as an example. By the action of the composite vector 82 on the PN junction, the majority carrier of the N-type semiconductor 11, which is the carrier output material 1, is electrons, and electrons are injected into 10 of the P-type semiconductors, which are the channel forming materials 2. In the P-type semiconductor, the injected electrons are a minority carrier, and an inversion layer is formed on the insulator 8 side of the P-type semiconductor. That is, when the inversion layer is formed on the surface of the channel forming material 2, and the carrier moves inside the inversion layer, the inversion layer becomes a channel. The injected carrier performs a sliding movement in the acceleration channel 9 to obtain a large kinetic energy. In the channel on the surface of the channel forming material 2 the injected electrons are subjected to the Coulomb force by the action of an electric field. When the two vectors indicated by the arrow are combined based on the vector operation, the synthesized vector 82 shown is formed. When the voltage of the first power source 31 and the voltage of the second power source 32 are adjusted, the composite vector faces the direction of the boundary between the insulator 8 and the P-type semiconductor 10. Therefore, when the voltages of the two power supplies are properly adjusted, electrons injected into " 10 " of the P-type semiconductor perform sliding movement on the surface close to the insulator 8 of the P-type semiconductor 10. Finally, electrons injected into "10" of the P-type semiconductor are absorbed by the electron absorption collector 26 (not shown).

When electrons are injected from the N-type semiconductor 11 into the P-type semiconductor 10, holes are injected from the P-type semiconductor 10 into the N-type semiconductor 11. Therefore, holes reach the N-type semiconductor 11 and positive charges accumulate. When the energy accumulator 15 is connected between the N-type semiconductor 11, which is the carrier output material 1, and the electron absorption collector 26, holes and electrons form a pair and accumulate therein. When the electrical load 5 is connected to the energy accumulator 15 in parallel, electrons accumulated in the electron absorbing collector 26 and holes accumulated in the N-type semiconductor 11 are neutralized via the electrical load 5. And both are electrically extinguished. At this time, electrical energy is supplied to the electrical load 5. The electrical energy is generated by accelerating the carrier based on the effect of the electric field. Due to the effect of the electric field generated by the electrodes of the carrier accelerator, electrons present in the N-type semiconductor are injected from the N-type semiconductor into the P-type semiconductor. Electrons injected into the P-type semiconductor are accelerated by performing a sliding movement in the acceleration channel 9. Since the carrier is accelerated to obtain kinetic energy, it is possible for electrons in a high energy state to pass through the potential barrier present in the irreversible process generator by the quantum mechanical tunnel effect. Electrons traveling at high speed are collected in an electron absorption collector disposed at the end of the acceleration channel. Electrons collected by the electron absorbing collector are input to one input terminal of the energy accumulator, and holes remaining in the N-type semiconductor are input to the other input terminal of the energy accumulator, whereby electrons and holes form a pair, and energy is accumulated. The accumulation of energy in the energy accumulator in the energy accumulator is increased because the electrons and holes injected later in time are accelerated to accumulate. The energy accumulator is connected in parallel to the electrical load, so that electrons and holes are supplied to the electrical load. As a result, electrical energy obtained by the generation of electrons and holes is consumed at the electrical load. Applying integrated circuit technology, it is easy to manufacture a device for injecting electrons and holes, so that the field effect power generation device of the present invention can generate electrical energy with better efficiency than a conventional power generation device. In addition, in the field effect power generation device of the present invention, since both electrons and holes move to the energy accumulator at an early stage, electrical energy can be accumulated in the energy accumulator, and energy generation efficiency is improved. When a P-type semiconductor is used as a carrier output material and an N-type semiconductor is used as a carrier input material, a PN junction is formed by electrically connecting the P-type semiconductor and the N-type semiconductor. The carrier accelerator is constituted by arranging an insulator on the front surface or a part of the surface of the N-type semiconductor, placing the electrode of the carrier accelerator in the insulator, applying a voltage to the electrode of the carrier accelerator using a power source, and forming the carrier accelerator. A portion of the acceleration channel is formed on the surface of the insulator side of the N-type semiconductor by the action of. Holes present in the P-type semiconductor are injected from the P-type semiconductor into the N-type semiconductor by the effect of the electric field generated by the electrode of the carrier accelerator. Holes injected into the N-type semiconductor are accelerated by performing a sliding movement in the acceleration channel 9. Since the carrier is accelerated to obtain kinetic energy, it is possible for holes in a high energy state to pass through the irreversible process generating unit. Holes traveling at high speed are collected in the hole absorbing collector disposed at the end of the acceleration channel. Holes collected in the hole absorbing collector are input to one input terminal of the energy accumulator, and electrons remaining in the P-type semiconductor are input to the other input terminal of the energy accumulator to form a pair between electrons and holes. By accumulating, the movement of the electrons and holes injected later in time is accelerated so as not to be disturbed, thereby increasing the amount of energy accumulated in the energy accumulator. Energy accumulators are connected in parallel to the electrical loads so that electrons and holes are supplied to the electrical loads. As a result, electrical energy obtained by the generation of electrons and holes is consumed at the electrical load. Applying integrated circuit technology, it is easy to manufacture a device for injecting electrons and holes, so that the field effect power generation device of the present invention can generate electrical energy with better efficiency than a conventional power generation device. Further, in the field effect power generation device of the present invention, since both electrons and holes move to the energy accumulator at an early stage, electrical energy can be accumulated in the energy accumulator, whereby energy generation efficiency is improved. In conclusion, the field effect power generation device of the present invention does not need to supply the carrier with the breakthrough energy of the large work function required to emit electrons in the vacuum, so that only the energy required for injection performed in the material is supplied to the device. It becomes possible to implement | achieve, and the energy supplied from an external power supply becomes very small, As a result, there exists a characteristic that power generation efficiency becomes favorable. In addition, in the field effect power generation device of the present invention, since the carrier is accelerated in the acceleration channel, the energy loss consumed in the acceleration channel is determined to be nearly zero by disposing the electrode in the insulator, and thus the efficiency is better than that of the conventional power generation device. It becomes possible to generate electrical energy. The case where the P-type semiconductor 10 is used as a specific example of the channel forming material 2 is described below. FIG. 23 shows a case where the insulator 8 is disposed on the P-type semiconductor 10. The first electrode 61 of the carrier accelerator and the second electrode 62 of the carrier accelerator are arranged in the insulator 8. The first electrode 61 of the carrier accelerator and the second electrode 62 of the carrier accelerator are disposed at a position very close to the P-type semiconductor 10. The first electrode 61 of the carrier acceleration device is connected to the negative electrode of the power supply 30 to accumulate negative charge. The second electrode 62 of the carrier acceleration device is connected to the positive electrode of the power supply 30 to accumulate positive charge. Therefore, an electric field is generated between the second electrode 62 of the carrier accelerator and the first electrode 61 of the carrier accelerator. Since both electrodes are arranged in an insulator, no current flows between the two electrodes. 24 shows an electric force line directed from the second electrode 62 of the carrier accelerator to the first electrode 61 of the carrier accelerator. As shown in the figure, an electric field is generated toward the negative electrode with the positive electrode, and the electric force line is shown by the arrowed curve. Electric force lines pass through the insulator 8 and the P-type semiconductor 10. Therefore, an acceleration channel 9 is generated by an electric field near the boundary between the P-type semiconductor 10 and the insulator 8, and there is an electric field in the horizontal direction near the surface of the P-type semiconductor 10. 10) The electron injected as a carrier performs a sliding movement in the right direction in the same figure. That is, the electric field generated by the voltage of the power supply 30 accelerates electrons to the right direction. By arranging only a plurality of electrodes of the carrier accelerator, the speed of the electrons increases and the electrons possess a large kinetic energy. The kinetic energy is generated by the electric field, but is not electrically available in this state, so the kinetic energy of the carrier is converted into potential energy. The electrons sufficiently retaining the kinetic energy are allowed to cross the potential barrier, and finally reach the electron absorption collector 26 and are absorbed therein so that the electron absorption collector 26 acquires a charge. The charge accumulated in the electron absorption collector 26 contributes to power generation. Since there is almost no need to supply the energy necessary to perform power generation from the outside, the power generation efficiency of the field effect generator of the present invention becomes very good.

[Effect of invention 4]

According to the field effect power generation device according to claim (4), in addition to the action and effect by the configuration described in claim (1) above, an irreversible process generating portion is formed by an insulator or a vacuum, so that the field effect power generation can be satisfactorily performed. It becomes possible. In order to realize the field effect development phenomenon, it is necessary to introduce an irreversible process. In other words, when the carrier passes through the potential barrier generation unit 20 by the quantum mechanical tunnel effect, and moves from the carrier output material 1 to the channel forming material 2, an irreversible process is realized. As shown in FIG. 25, there is a case in which there is a carrier output material 1 and a channel forming material 2, and a potential barrier generation unit 20 is formed between the carrier output material 1 and the channel forming material 2. Consider. On the other hand, the carrier output material 1 and the channel forming material 2 are made conductive.

As a specific example, consider a case where a carrier is an electron and an anti carrier is a hole. As shown in FIG. 26, by the action of the carrier accelerator 3, electrons pass from the carrier output material 1 to the channel forming material 2 through the potential barrier generator 20 by a quantum mechanical tunnel phenomenon. do. When the carrier passes through the potential barrier generation unit 20, as shown in FIG. 27, electrons having negative charges are accumulated in the channel forming material 2, and positive charges, which are holes having missing electrons, are accumulated in the carrier output material 1. Accumulated holes are accumulated. As the number of holes in the carrier output material 1 and the number of electrons in the channel forming material 2 increase, the positive charges held by the holes and the negative charges held by the electrons are attracted to each other by Coulomb's law. Therefore, when the operation of the carrier accelerator 3 is stopped and the electrons in the channel forming material 2 are sufficiently large, as shown in FIG. 28, the electrons in the channel forming material 2 become the channel forming material 2. Go to). That is, a reversible process occurs, and electrons accumulated in the channel forming material 2 cannot be effectively used as electrical energy. Therefore, efficient movement cannot be realized without introducing an irreversible process during carrier movement.

In order to realize the electric field effect development, the movement of the carrier is considered in detail. The material in which the carrier and the anti-carrier are in an electrically neutral state is called a carrier output material 1. By utilizing the wave nature of the electrons, the electrons move through the potential barrier generator 20 and are injected into the channel forming material 2. That is, in the case where there is a potential barrier generation unit 20 between the carrier output material 1 and the channel forming material 2, the carrier output material 1 from the carrier forming material 1 to the channel forming material 2 is based on the carrier wave characteristics. By passing the potential barrier generation unit 20 by the quantum mechanical tunnel effect, carriers are accumulated in the channel forming material 2.

Next, an example in which electrons leave the carrier output material 1 will be considered. For electrons to deviate from the carrier output material 1, the electrons need to have sufficient kinetic energy. There are two methods to give kinetic energy to electrons as follows.

(1) When energy is supplied to the carrier output material 1, electrons present in the carrier output material 1 retain kinetic energy. As energy supplied to the carrier output material 1, there are a method such as electromagnetic wave irradiation and heat. When the temperature is raised by heating the carrier output material 1, the potential barrier generating unit 20 needs to be crossed to move away from the carrier output material 1. If the kinetic energy of the electrons present in the carrier output material 1 is sufficiently large, the electrons deviate from the carrier output material 1. However, due to the separation of the electrons, positive charges remain in the carrier output material 1, and the action of returning the released electrons by the coulomb force occurs, and the probability of moving to the channel forming material 2 becomes low. Based on the above principle, thermal power generation is realized. In thermal power generation, it is necessary to raise the temperature of the whole carrier output material 1, and it is difficult to implement | achieve a power generation device with good efficiency.

(2) Since the electrons in the carrier output material 1 carry negative charges, approaching positive charges attracts each other based on Coulomb's law. By using this attracting force to increase the speed of the electrons, it becomes possible to apply kinetic energy to the electrons. If the electrons have sufficient kinetic energy, it is possible to pass through the potential barrier generator 20 existing between the carrier output material 1 and the channel forming material 2 through the quantum mechanical tunnel effect by the wave nature. It becomes possible. The carrier output material 1 and the channel forming material 2 are disposed on the substrate 19 and the carrier output material 1 and the channel forming material 2 are electrically connected to each other. The carrier accelerator 3 is constituted by arranging an insulator on the front surface or a part, placing an electrode of the carrier accelerator 3 in the insulator, and applying a voltage to the electrode 60 of the carrier accelerator using a power source, The action of the carrier acceleration device 3 forms a part of the acceleration channel on the surface of the insulator 8 side of the channel forming material 2. By the effect of the electric field generated by the electrode 60 of the carrier acceleration device, the carrier present in the carrier output material 1 is injected from the carrier output material 1 into the channel forming material 2. The carrier injected into the channel forming material 2 accelerates and moves in the acceleration channel. Since the carrier is accelerated to obtain kinetic energy, it is possible for the carrier in the high energy state to pass through the irreversible process generator 4 by the quantum mechanical tunnel effect. The carrier moving at high speed is collected in a carrier absorbing collector disposed at the end of the acceleration channel 9. The carrier collected by the carrier absorption collector is input to one input terminal of the energy accumulator 15, and the anti-carrier remaining in the carrier output material 1 is input to the other input terminal of the energy accumulator 15, Since the carrier and the anti-carrier form a pair and accumulate in the energy accumulator 15, the carrier and the anti-carrier, which are injected later in time, are not prevented from moving while being accelerated, and thus accumulate in the energy accumulator 15. The amount of energy increases. The energy accumulator 15 is connected in parallel to the electrical load 5 so that a carrier and an anti carrier are supplied to the electrical load 5. As a result, electrical energy obtained by the generation of carriers and anti-carriers is consumed at the electrical load 5. Applying integrated circuit technology, it is easy to manufacture a device for injecting a carrier, so that the field effect power generation device of the present invention can generate electrical energy with better efficiency than a conventional power generation device. Further, in the field effect power generation device of the present invention, since both the carrier and the anti-carrier move to the energy accumulator 15 at an early stage, electrical energy can be accumulated in the energy accumulator 15, so that energy generation efficiency is good. Become. In addition, in the field effect power generation device of the present invention, since the breakthrough energy of the large work function required to emit electrons in the vacuum does not need to be supplied to the carrier, power is generated by supplying only the energy necessary for injection performed in the material to the device. It becomes possible to carry out, and the energy supplied from an external power supply becomes extremely small, As a result, there exists a characteristic that power generation efficiency becomes favorable.

[Effect 5 of the invention]

According to the field effect generator according to claim (5), the carrier output material 1 and the channel forming material 2 are disposed on the substrate, and the carrier output material 1 and the channel forming material 2 are electrically connected to each other. , The insulator 8 is disposed on the front surface or a part of the surface of the channel forming material 2, the electrode 60 of the carrier accelerator is disposed in the insulator 8, and the electrode 60 of the carrier accelerator is powered using a power source. The carrier acceleration device 9 is configured by applying a voltage to the surface of the carrier acceleration device 9, and a part of the acceleration channel 9 is formed on the surface of the insulator 8 side of the channel forming material 2 by the action of the carrier accelerator device 9. do. The electrons present in the carrier output material 1 are injected from the carrier output material 1 into the channel forming material 2 by the electric field effect generated by the electrode 60 of the carrier accelerator. In order to realize the electron injection, it is necessary to consider in detail the movement of the electron in the object. It is assumed that the carrier output material 11 and the channel forming material 2 are different materials, and they are all in an electrically bonded state. That is, the potential barrier generation unit 20 exists at the boundary between the carrier output material 1 and the channel forming material 2 and the carrier cannot freely move to other materials. In the carrier output material 1, the electron which is a carrier and the hole which is an anti carrier are about the same number, and are maintaining an electrically neutral state. Among the channel forming materials 2, electrons serving as carriers and holes serving as anti-carriers have almost the same number, and are maintained in an electrically neutral state. When a positive voltage is applied to the electrode 60 of the carrier accelerator, electrons holding negative charges move due to the electric field effect generated by the positive voltage. By utilizing the wave nature of the electrons, the electrons of the carrier output material 1 move to the channel forming material 2 through the potential barrier generation unit 20. This phenomenon is called electron injection. That is, in the case where the potential barrier generation unit 20 exists between the carrier output material 1 and the channel forming material 2, electrons are generated from the carrier output material 1 to the channel forming material 2 in a wave nature. By passing the potential barrier generation unit 20 on the basis of the quantum mechanical tunnel effect, charges are accumulated in the channel forming material 2. The carrier injected into the channel forming material 2 accelerates and moves in the acceleration channel 9. Since electrons are accelerated to obtain kinetic energy, electrons in a high energy state pass through the irreversible process generator 4 by a quantum mechanical tunnel effect, and electrons are emitted in a vacuum. The phenomenon in which electrons are emitted in a vacuum is described below. As shown in FIG. 29, electrons are emitted by electrons present in the material passing through the potential barrier by a quantum mechanical tunnel effect. In classical mechanics, if the potential barrier is high, the electrons cannot cross this. However, according to quantum mechanics, electrons sometimes penetrate through a high potential barrier due to the wave nature of electrons, which is called a tunnel effect.

As shown in FIG. 30, when electrons perform hot electron emission, when the energy retained by electrons becomes larger than a work function by heating, they are emitted in a vacuum. As shown in Fig. 31, when the external electric field becomes stronger, the potential barrier becomes thinner, and even when the cathode is not heated, electrons are emitted by the electric field effect during vacuum. This depends on the quantum mechanical tunnel effect due to the electron wave nature. In the field effect power generation device of the present invention, electrons are emitted in a vacuum without applying heat energy to the electrons from the outside. The electrons to emit from the material in vacuum need to cross the potential barrier at the boundary between the material and the vacuum. For the electron to perform the emission, the electron needs to acquire sufficient kinetic energy. In order to impart kinetic energy to the electrons, the effect of the electric field generated by the electrode 60 of the carrier accelerator is used. Since the electrons in the channel forming material 2 carry negative charges, approaching positive charges attracts each other based on Coulomb's law. By using the pulling force, it is possible to increase the speed of electrons. That is, when electrons are accelerated by the electric field effect, the kinetic energy held by the electrons increases. When the electrons sufficiently retain the kinetic energy in the channel forming material 2, the potential barrier generating unit 20 existing at the boundary between the channel forming material 2 and the vacuum passes through the quantum mechanical tunnel effect due to the wave nature. It becomes possible. In the present invention, electrons are injected from the carrier output material 1 into the two-channel forming material 2, and the electrons are accelerated by the electric field effect in the acceleration channel 9 so that the electrons are already quantified by the quantum mechanical tunnel effect. It is characterized by increasing the probability of being shunted. The emission in this case is an irreversible process. Emitted electrons are collected at the electron absorption collector 26 disposed at the end of the acceleration channel 9 at high speed in the acceleration channel 9. Electrons collected by the electron absorption collector 26 are input to one input terminal of the energy accumulator 15, and holes remaining in the carrier output material 1 are input to the other input terminal of the energy accumulator 15. The electrons and holes form a pair and accumulate in the energy accumulator 15, so that the movement of the electrons and holes injected later in time is accelerated so as not to be prevented from moving. This increases. The energy accumulator 15 is connected to the electrical load 5 in parallel, whereby electrons and holes are supplied to the electrical load 5. As a result, electrical energy obtained by the generation of electrons and holes is consumed in the electrical load 5. Applying integrated circuit technology, it is easy to fabricate a device for injecting electrons, so the electric field effect power generator of the present invention can generate electrical energy with better efficiency than a conventional power generator. In addition, in the field effect power generation device of the present invention, since both electrons and holes move to the energy accumulator 15 at an early stage, electrical energy can be accumulated in the energy accumulator 15, so that energy generation efficiency is improved. In addition, in the field effect power generation device of the present invention, since the breakthrough energy of the large work function required for the electrons to be emitted in the vacuum does not need to be supplied to the electrons, the power generation is performed by supplying only the energy required for injection performed in the material to the device. It becomes possible, and the energy supplied from an external power supply becomes extremely small, As a result, there exists a characteristic that power generation efficiency becomes favorable.

[Effect of invention 6]

According to the field effect electric power generation apparatus of Claim (9), in addition to the action and effect by the structure of said claim (5), there exists an operation and effect described below. The case where the electron which is a carrier which has a negative charge is absorbed by the electron absorption collector 26 is considered. The generated power is consumed when the electrons accumulated in the electron absorption collector 26 move through the electrical load 5 and are dissipated by carrying out a positive charge and recombination. In order to accumulate electrons in the electron absorption collector 26, and to use these electrons for power consumption, the conditions shown below are necessary.

(1) The electrons reach the electron absorption collector 26 with good efficiency.

(2) The amount of extinction caused by leakage of electrons accumulated in the electron absorption collector 26 is minimized, and most electrons are used for power consumption.

(3) Since the carrier accelerator 3 is arranged around the electron absorption collector 26, and positive charges are accumulated on the electrode of the carrier accelerator 3, electrons are accelerated by the carrier before being absorbed by the electron absorption collector 26. There is a possibility of approaching the electrode of the device 3. Therefore, it is a structure which prevents the electron which approaches the electron absorption collector 26 from moving to the opposite direction by the action of the positive electrode of the carrier acceleration apparatus 3 ,.

(4) When electrons accumulate in the electron absorption collector 26, the repulsive force according to Coulomb's law acts on the negative charge accumulated in the electron absorption collector 26 next to the electrons approaching the electron absorption collector 26, It is necessary to move the electrons absorbed by the electron absorption collector 26 to the energy accumulator 15 early.

(5) In the energy accumulator 15, electrons and holes form a pair and accumulate. When either electrons or holes are supplied from the power source, the positive and negative charges are eliminated by recombination via the electrical load 5. In this case, power consumption of the external power source is generated and power generation efficiency is lowered. Therefore, power generation efficiency is improved by supplying electrons and holes accumulated in the energy accumulator 15 from the carrier output material 1.

Electrons accelerated by the positive charge accumulated in the positive electrodes of the carrier accelerator 3 retain kinetic energy. Electrons holding kinetic energy approach the electron absorption collector 26. When the electrons collide with the electron absorption collector 26, the kinetic energy held by the electrons is released to give thermal energy to the electron absorption collector 26. The temperature of the electron absorption collector 26 rises by the heat energy supplied to the electron absorption collector 26. When the temperature of the electron absorption collector 26 rises, heat of the electron absorption collector 26 is transferred to the periphery, and the temperature of the periphery rises. The temperature rise of the electron absorption collector 26 and its periphery deteriorates the material of the electron absorption collector 26 and its periphery. When the material is deteriorated, the resistivity of the member is lowered, the leakage current is increased, and the power generation efficiency is lowered. In addition, deterioration of the member causes a defect such as shortening of durability. In addition, since the temperature rise of the electron absorption collector 26 and its periphery causes the temperature rise of the entire apparatus, it becomes a fatal drawback in mobile devices, and the use range of the power generation device in which the temperature rises is limited. Therefore, when electrons holding kinetic energy approach the electron absorption collector 26, it is necessary to reduce the kinetic energy held by the electrons and then collide with the electron absorption collector 26.

The former carries a negative charge. By Coulomb's law, negative charges attract each other with positive charges, but repel each other with negative charges. Thus, the electron accelerates when it approaches positive charge and decelerates when it approaches negative charge. Therefore, in the early stages of power generation, electrons are accelerated by the action of positive charges in order to generate hot electrons, but when electrons are sufficiently accelerated to break through the potential barrier and approach the electron absorption collector 26, they are decelerated by the action of negative charges. There is a need.

When electrons having kinetic energy approach the electron absorption collector 26, a method shown below is adopted to slow the speed.

(1) The deceleration electrode is arranged around the electron absorption collector 26.

(2) When negative charges accumulate in the electron absorption collector 26, electrons approaching the electron absorption collector 26 are subjected to the coulomb repulsion force by the negative charges accumulated in the electron absorption collector 26. Therefore, the speed of the electrons approaching the electron absorption collector 26 is lowered.

(3) The structure of the electron absorption collector 26 is determined for the purpose of decreasing the speed of the electrons approaching the electron absorption collector 26.

The details of the above three deceleration methods are described below.

(1) When electrons approach the electron absorption collector 26, as shown in FIG. 32, the electrically conductive material 8 is arrange | positioned immediately before the electron absorption collector 26. As shown in FIG. This is called suppressor 25. An insulator 8 is disposed between the suppressor 25 and the electron absorption collector 26, and the suppressor 25 and the electron absorption collector 26 are electrically insulated. A power source is disposed between the electron absorption collector 26 and the suppressor 25, and the potential of the suppressor 25 is set to a value lower than the potential of the electron absorption collector 26. Immediately before the electron approaches the electron absorption collector 26, the negative charge and the coulomb action accumulated in the suppressor 25 are applied. Therefore, electrons approaching the electron absorption collector 26 are decelerated. When electrons having kinetic energy approach the electron absorption collector 26, a part of the kinetic energy is lost by the suppressor 25, and the speed at which the electrons collide with the electron absorption collector 26 is lowered. The energy supplied to the collector 26 decreases, and the temperature rise of the electron absorption collector 26 decreases. In addition, when electrons collided with the electron absorption collector 26 rebound by returning, the electrons are directed to the electron absorption collector 26 again by the negative charge repulsion of the suppressor 25, so that the suppressor 25 ) Also exerts the effect of suppressing the deviation of the bounds of electrons, and the ability of the electron absorption collector 26 to collect electrons becomes good.

(2) When negative charges are accumulated in the electron absorption collector 26, electrons approaching the electron absorption collector 26 from the back are absorbed by the coulomb repulsive force due to negative charges accumulated in the electron absorption collector 26. The speed of electrons approaching) decreases. Therefore, the energy supplied to the electron absorption collector 26 is reduced by the collision of electrons, and the temperature rise of the electron absorption collector 26 can be suppressed. When negative charges are accumulated in the electron absorption collector 26, the power generation voltage is increased to increase the electric energy. Therefore, when a negative charge remains in the electron absorption collector 26, a large electric energy can be supplied, and since the temperature rise of the electron absorption collector 26 is also suppressed, a power generation apparatus with good efficiency is realized. In order that negative charges always remain in the electron absorption collector 26, it is necessary to manufacture a device in which the number of electrons that approach the electron absorption collector 26 increases. That is, it is set as the structure which has the ability to supply a lot of electrons to the electron absorption collector 26. Further, having electrons close to the electron absorption collector 26 more than necessary may cause adhesion around the negative charge of the electrons to adversely affect the operation of later electrons. Controlling depending on the potential of C) is a necessary condition for realizing a device having excellent efficiency and durability.

(3) The structure of the electron absorption collector 26 is determined for the purpose of reducing the speed of the electrons approaching the electron absorption collector 26. If the electron absorption collector 26 is a flat structure, the electrons will not decelerate and collide with the electron absorption collector 26. Therefore, fine irregularities are arranged on the surface of the electron absorption collector 26. As an example of very thin irregularities, it is an effective method to arrange a carbon material on the surface of the electron absorption collector 26. When a very small carbonaceous material is disposed on the surface of the electron absorption collector 26, electrons approach the carbonaceous material immediately before approaching the conductive portion of the electron absorption collector 26. When electrons approach a carbon-based material, the electron absorption collector 26 collides with the electron absorption collector 26 after the electrons are decelerated by the coulomb's repulsive action by the negative charges retained by the electrons previously reached in time. Since the speed | rate which collides with (26) falls and the temperature rise of the electron absorption collector 26 is suppressed, the carbon-type substance arrange | positioned on the surface of the electron absorption collector 26 improves the durability of the field effect power generation device of this invention. There is an effect of increasing the power generation efficiency.

[Effect of invention 7]

According to the field effect power generation device described in claim (10), in addition to the action and effect by the configuration described in claim (5), electromagnetic waves, electrons, photons, and the like possess quantum mechanical wave characteristics, When the wave energy is irradiated to the carrier output material 1 and the channel forming material 2, the number of electrons passing through the potential barrier generation unit 20 increases. The details of this phenomenon are described below.

In the field effect development phenomenon of the present invention, in order to prevent the electrons collected in the electron absorption collector 26 from moving in the reverse direction, it is necessary to introduce the irreversible process generating unit 4. In order for the electrons to pass through the irreversible process generator 4, it is necessary to give the electrons kinetic energy. For this purpose, electrons are passed through the potential barrier generation unit 20 by the quantum mechanical tunnel effect, thereby injecting from the carrier output material 1 into the channel forming material 2 and moving the surface of the channel forming material 2. It needs to be accelerated. Electromagnetic waves, electrons, photons, and the like are irradiated to the carrier output material 1 containing electrons and holes in almost equal amounts. By utilizing the wave nature of the electrons, the electrons move through the potential barrier generation unit 20, and the electrons are injected into the channel forming material 2 in good condition. That is, in the case where the potential barrier generation unit 20 exists between the carrier output material 1 and the channel forming material 2, electromagnetic waves, electrons, and the like are generated from the carrier output material 1 to the channel forming material 2. Carrier is accumulated in the channel formation material 2 by passing the potential barrier generation part 20 by a quantum mechanical tunnel effect by irradiating a photon or the like. 33 shows the statistical energy distribution of electrons in the material. According to the figure, the number of electrons having a large energy is small and the number of electrons having a small energy is small, but the number of electrons having energy near the average tends to be the largest. When the energy possessed by the electron is small, it is called cold electron, and when the energy possessed by the electron is called hot electron, it is called hot electron. In Fig. 34, the threshold value of the potential barrier with respect to the energy of the electron is represented by T. If the energy possessed by the electron is large and can exceed the threshold value T of the potential barrier, it is called elite electrons. Conversely, if the energy possessed by the electron is so small that it cannot exceed the threshold value T of the potential barrier, it is called non-elite electrons. In the field effect power generation device of the present invention, the elite electrons can contribute to power generation since it is possible to exceed the threshold value T of the potential barrier, but the non-elite electrons cannot exceed the threshold value T of the potential barrier. Can not contribute. When kinetic energy is not imparted to electrons in the material from the outside, almost all of the electrons in the material are non-elite electrons. By irradiating the carrier output material 1 and the channel forming material 2 with electromagnetic waves, electrons, photons, and the like where quantum mechanical waves are exhibited, the number of elite electrons increases when the kinetic energy is given to the electrons. It becomes possible to exceed the threshold value T of the potential barrier.

When electrons are placed in an electric field, positive charges are accumulated in the positive electrode that generates the electric field, and the electrons move in a direction approaching the positive charge, and negative charges are accumulated in the negative electrode that generates the electric field. Move in the direction of Therefore, when the electron moves by the electric field, the moving speed of the electron is increased), and the electron is accelerated. The electrons injected due to the acceleration of the electrons by the electric field and the synergistic effect of the irradiation of the wave energy increase the kinetic energy possessed by the electrons and the number of elite electrons which can cross the threshold T of the potential barrier. The number of s increases and the number of electrons that are emitted also increases. Therefore, since the number of electrons contributing to power generation increases, the amount of power generation increases.

The characteristics of the field effect generator of the present invention are described below. In addition to the effect of the electric field, the method of increasing the kinetic energy of the output electrons by irradiating the carrier output material 1 and the channel forming material 2 with electromagnetic waves, electrons, photons, etc., where the quantum mechanical waves are exhibited Features are described below. When a positive charge is accumulated on the positive electrode and a negative charge is accumulated on the negative electrode, an electric field is generated between the positive electrode and the negative electrode. An insulator 8 is disposed between the positive electrode and the negative electrode. Since the impedance of the insulator 8 is high, there is almost no current flowing between the positive electrode and the negative electrode. Therefore, since the energy consumed to generate an electric field is extremely small, the energy consumed to produce elite electrons is small, so that power generation with high power generation efficiency may be realized. In the apparatus of the present invention, the number of elite electrons contributing to power generation is increased by irradiating the carrier output material 1 and the channel forming material 2 with electromagnetic waves, electrons, photons and the like in combination with the field effect. The carrier output material 1 and the channel forming material 2 are disposed on the substrate 19, the carrier output material 1 and the channel forming material 2 are electrically connected, and the surface of the channel forming material 2 is provided. By placing the insulator 8 on the front or a portion of the insulator, placing the electrode of the carrier accelerator 3 in the insulator 8, and applying a voltage to the electrode 60 of the carrier accelerator using a power source, the carrier accelerator. (3), a part of the acceleration channel 9 is formed on the surface of the insulator 8 side of the channel forming material 2 by the action of the carrier accelerator 3. The electrons present in the carrier output material 1 are injected from the carrier output material 1 into the channel forming material 2 by the electric field effect generated by the electrode 60 of the carrier accelerator. The number of electrons injected into the channel forming material 2 is increased by irradiating the carrier output material 1 with electromagnetic waves, electrons, photons, and the like where quantum mechanics are exhibiting wave characteristics. Electrons injected into the channel forming material 2 accelerate and move in the acceleration channel 9. The electrons acquire a large kinetic energy by irradiating the electromagnetic wave, electrons, and photons of the channel forming material 2 with quantum mechanical waves, so that the electrons in the high energy state can cause the irreversible process generator 4 to The tunnel effect makes it possible to pass and electrons are emitted in a vacuum. The emitted electrons are collected in the electron absorption collector 26 disposed at the end of the acceleration channel 9. Electrons collected by the electron absorption collector 26 are input to one input terminal of the energy accumulator 15, and holes remaining in the carrier output material 1 are input to the other input terminal of the energy accumulator 15. Since electrons and holes form a pair and accumulate in the energy accumulator 15, the movement of the electrons and holes that are later emitted later in time is not hindered, and thus the energy accumulates in the energy accumulator 15. The amount increases. The energy accumulator 15 is connected to the electrical load 5 in parallel, whereby electrons and holes are supplied to the electrical load 5. As a result, electrical energy obtained by the generation of electrons and holes is consumed in the electrical load 5. Applying integrated circuit technology, it is easy to fabricate a device for injecting a carrier, so that the field effect power generation device of the present invention can generate electrical energy with better efficiency than a conventional power generation device. In addition, in the field effect power generation device of the present invention, since both electrons and holes move to the energy accumulator 15 at an early stage, electrical energy can be accumulated in the energy accumulator 15, so that energy generation efficiency is improved. In conclusion, in the field effect power generation device of the present invention, irradiating electromagnetic waves, electrons, photons, and the like in the quantum mechanical wave region to the carrier output material (1) and the channel forming material (2) and synergistic effect of the field effect This makes it possible to realize a field effect power generation device having good power generation efficiency.

[Effect of Invention 8]

According to the field effect power generation device according to claim (11), in addition to the action and effect by the configuration described in claim (5) above, the electric field is disposed by disposing a secondary electron emission member on the front surface or a part of the surface of the carrier input material. It is possible to perform the effect generation well. The carrier injected into the channel forming material 2 from the carrier output material 1 is accelerated by the carrier acceleration device 3, whereby the carrier acquires kinetic energy. The place where the carrier proceeds is called the acceleration channel 9. The example whose carrier is an electron is shown below. As shown in FIG. 35, electrons injected into the channel forming material 2 from the carrier output material 1 travel in the acceleration channel 9 between the channel forming material 2 and the insulator 8. . The first power source 31 is used to inject electrons serving as carriers from the N-type semiconductor 11 to the P-type semiconductor 10. An electric field is generated between the first electrode 61 of the carrier accelerator and the second electrode 62 of the carrier accelerator by the first power source 31, and the electrons are separated between the insulator 8 and the channel forming material 2. It progresses in the acceleration channel 9 which exists in the direction, and progresses to the direction of the 2nd electrode 62 of the carrier acceleration apparatus by which positive charge was accumulate | stored. In addition, an electric field is generated between the second electrode 62 of the carrier accelerator and the third electrode 63 of the carrier accelerator by the second power supply 32, and is accelerated under the third electrode 63 of the accelerator. Proceed. On the right side of the acceleration channel 9, irregularities are set on the surface of the channel forming material 2. The unevenness provided on the surface of the channel forming material 2 is extremely small in size. If the electric field is generated between the third electrode 63 of the carrier accelerator and the fourth electrode 64 of the carrier accelerator by the third power source 33, and the electron serving as the carrier sufficiently retains the kinetic energy, the channel is formed. Passes through the surface of the recessed area of the material 2. By the action of the electric field generated from the electrodes of the carrier accelerator, the velocity of the electrons gradually increases, and the uneven surface of the channel forming material 2 passes through the potential barrier by the tunnel effect. Finally, if the velocity of the electrons is sufficiently high and the kinetic energy held is large, as shown in e in the figure, the electrons are released from the surface of the channel forming material 2 and are emitted in vacuum. In the present invention, the emitted electrons collide with the electron absorption collector 26 and are absorbed by the collector. Electrons absorbed by the collector are used as electrical energy.

36 shows a case where the secondary electron emission member 80 is disposed in the convex region of the channel forming material 2. In the figure, an electric field is generated between the first electrode 61 of the carrier accelerator and the second electrode 62 of the carrier accelerator by the first power source 31, and the electrons form a channel with the insulator 8. It progresses in the acceleration channel 9 between the materials 2 and proceeds while accelerating in the direction of the second electrode 62 of the carrier accelerator in which the positive charge has accumulated. In addition, an electric field is generated between the second electrode 62 of the carrier accelerator and the third electrode 63 of the carrier accelerator by the second power supply 32, and is directly below the third electrode 63 of the accelerator. Proceed with acceleration. Due to the electric field acceleration, electrons having a large kinetic energy collide with the secondary electron emission member 80 to emit secondary electrons. The electrons colliding with the secondary electron emission member 80 are called primary electrons. Both the primary electrons and the secondary electrons are accelerated by the electric field between the third electrode 63 of the carrier accelerator and the fourth electrode 64 of the carrier accelerator, which are generated by the third power source 33, and proceed. When secondary electrons are emitted from the secondary electron emission member 80 provided on the surface of the channel forming material 2, holes paired with them remain in the channel forming material 2, and they are formed in the channel forming material 2 ) Is a carrier injected into the carrier output material 1. As the injected carrier is accelerated by the carrier acceleration device 3, the carrier can hold a large kinetic energy. The path that the carrier travels is called the acceleration channel 9. As shown in FIG. 37, electrons as carriers travel through an acceleration channel 9 between the channel forming material 2 and the insulator 8. An electric field is generated between the first electrode 61 of the carrier accelerator and the second electrode 62 of the carrier accelerator by the first power source 31, and the electrons are also insulated from the channel forming material 2. The surface on the (?) Side is advanced, and in the direction of the second electrode 62 of the carrier accelerator in which positive charges are accumulated. When the velocity of the electron is sufficiently high, the kinetic energy held by the electron increases, and electrons are emitted between the insulator 8 and the channel forming material 2 so that the electrons fly out. The flying electrons collide with the secondary electron emission material 80 to emit a plurality of secondary electrons. In addition, an electric field is generated between the second electrode 62 of the carrier accelerator and the third electrode 63 of the carrier accelerator by the second power supply 32, and the second electrode 63 of the accelerator is directly shortened. Proceed while accelerating below. When the speed of the electrons is sufficiently high, the kinetic energy held by the electrons increases, and the flying electrons collide with the secondary electron emission material 80 to emit a plurality of secondary electrons. When the electric field is generated between the third electrode 63 of the accelerator of the carrier and the fourth electrode of the carrier accelerator by the third power source 33, and the electron serving as the carrier sufficiently retains the kinetic energy, Impinges on the secondary electron emitting material 80 to emit a plurality of secondary electrons. If the above process is continued, the number of flying electrons increases rapidly. The electrons colliding with the secondary electron emission member 80 are called primary electrons. Both primary electrons and secondary electrons progress while being accelerated by an electric field between the third electrode 63 of the carrier accelerator and the fourth electrode 64 of the carrier accelerator generated by the third power source 33. When secondary electrons are emitted from the secondary electron emission member 80 provided on the surface of the channel forming material 2, holes paired with them remain in the channel forming material 2, and they A carrier injected into the carrier output material. In addition, the secondary electron emission member 80 can be employed in an imaging tube or the like, and a lead oxide, a silicon oxide-based material, or the like is used. When electrons collide with the secondary electron emission member 80, the energy of the primary electron which emits the most secondary electrons is hundreds of electronic bolts (eV).

As electrons as carriers are accelerated by the electric field, the kinetic energy held by the electrons increases. When the kinetic energy possessed by the electrons increases, even when a large amount of electrons accumulate in the collector, it is possible to overcome the coulomb's repulsive force and collide with the collector, thereby increasing the voltage generated by power generation. Further, when the secondary electron emitting member 80 is disposed in the acceleration channel 9 and the electrons traveling at high speed become the primary electrons and emit a large number of secondary electrons, the number of electrons contributing to power generation increases and the power generating device Since the number of electrons that can be taken out from the circuit increases, the current that can flow to the electrical load 5 increases. Since the product of the voltage and the current is electric power, by arranging the secondary electron emission member 80, the electric power obtained by electric power generation is increased and the electric power generation efficiency is improved.

[Effect of Invention 9]

According to the field effect power generation device according to claim (12), in addition to the action and effect by the configuration described in claim (5), the trajectory of the electrons that have been emitted is deflected using a deflection electrode and a deflection stimulus. It is done. Hereinafter, the details of the deflection method using the deflection electrode will be described. The case where the P type semiconductor 10 is used as the channel formation material 2 using the N type semiconductor 11 as the carrier output material 1 is shown below. 38 shows the case where the orbits of the injected carrier electrons are bent and collected by the electron absorption collector 26. The P-type semiconductor 10 and the N-type semiconductor 11 form a PN junction. The negative voltage terminal of the first power source 31 is electrically connected to the N-type semiconductor 11, and the positive voltage terminal of the first power source 31 is electrically connected to the first electrode 61 of the carrier accelerator. An electric field is generated between the first electrode 61 of the carrier accelerator and the N-type semiconductor 11. Electrons serving as carriers are injected from the N-type semiconductor 11 into the P-type semiconductor 10 and move in the acceleration channel 9 by the generated electric field. The negative voltage terminal of the second power supply 32 is electrically connected to the first electrode 61 of the carrier accelerator, and the positive voltage terminal of the first power source 31 is electrically connected to the second electrode 62 of the carrier accelerator. Is connected. An electric field is generated between the first electrode 61 of the carrier accelerator and the second electrode 62 of the carrier accelerator. Electrons injected by the generated electric field are accelerated in the acceleration channel 9. The negative voltage terminal of the third power source 33 is electrically connected to the second electrode 62 of the carrier accelerator, and the positive voltage terminal of the third power source 33 is electrically connected to the third electrode 63 of the carrier accelerator. Is connected. An electric field is generated between the second electrode 62 of the carrier accelerator and the third electrode 63 of the carrier accelerator. Electrons injected by the generated electric field are accelerated in the acceleration channel 9. The negative voltage terminal of the fourth power supply 34 is electrically connected to the third electrode 63 of the carrier accelerator, and the positive voltage terminal of the third power source 33 is electrically connected to the fourth electrode 64 of the carrier accelerator. Is connected. An electric field is generated between the third electrode 63 of the carrier accelerator and the fourth electrode 64 of the carrier accelerator. Electrons injected by the generated electric field are accelerated in the acceleration channel 9. The negative voltage terminal of the fifth power source 35 is electrically connected to the fourth electrode 64 of the carrier accelerator, and the positive voltage terminal of the fifth power source 35 is electrically connected to the fifth electrode 65 of the carrier accelerator. Is connected. An electric field is generated between the fourth electrode 64 of the carrier accelerator and the fifth electrode 65 of the carrier accelerator. Electrons injected by the generated electric field are accelerated in the acceleration channel 9. Fig. 39 shows an overview of the surface in the field effect development of the present invention when electrons are subjected to electric field deflection in the acceleration channel and the orbit is bent and collected by the electron absorption collector. The N-type semiconductor 11 and the P-type semiconductor 10 form a PN junction. Since the power supplies of the first power supply 31, the second power supply 32, the third power supply 33, the fourth power supply 34, and the fifth power supply 35 shown in the drawing are connected in series, they are synthesized. Represented by (30). The positive voltage terminal of the power supply 30 is electrically connected to the carrier accelerator fifth electrode 65, and the negative voltage terminal of the power supply 30 is electrically connected to the N-type semiconductor 11. An electric field is generated between the fifth electrode 65 of the carrier accelerator and the N-type semiconductor 11. Electrons are injected from the N-type semiconductor 11 to the P-type semiconductor 10 by the generated electric field. The injected electrons travel in the acceleration channel 9 on the surface of the P-type semiconductor 10. Since the positive charge accumulated in the fifth electrode 65 of the carrier accelerator is attracted by the attraction force based on Coulomb's law, the injected electrons are drawn from the sixth electrode of the carrier accelerator in the acceleration channel 9. Move in the direction of (66). When the injected electrons move, the electric field generated by another acceleration electrode disposed in the insulator 8 also contributes. As shown in the figure, the P-type semiconductor 10 is not straight but bent, and even if the surface of the P-type semiconductor 10 is moved linearly, it cannot reach the fifth electrode 65 of the carrier accelerator. The insulator 8 is arranged in the straight direction.

As shown in FIG. 39, the positive voltage terminal of the carrier track deflection power supply 90 is electrically connected to the carrier track deflection positive electrode 91, and the negative voltage terminal of the carrier track deflection power supply 90 is connected to the carrier track deflection negative electrode ( 92) electrically. The electric field generated between the carrier orbital deflection positive electrode 91 and the carrier orbital deflection negative electrode 92 bends an emergency trajectory of electrons injected onto the surface of the P-type semiconductor. As a result, the injected electrons proceed in the direction of the electron absorption collector 26 and are finally collected by the electron absorption collector 26.

The electron absorption collector 26 is electrically connected to the negative voltage terminal of the carrier accumulator 15, and the N-type semiconductor 11 is electrically connected to the positive voltage terminal of the carrier accumulator 15. Electrons absorbed by the electron absorption collector 26 reach the negative electrode of the carrier accumulator 15. Holes injected from the P-type semiconductor 10 into the N-type semiconductor 11 reach the positive electrodes of the carrier accumulator 15. As a result, the positive and negative charges are stored in the carrier accumulator 15. Therefore, when electrical loads are connected to both terminals of the carrier accumulator 15, holes and electrons accumulated in the carrier accumulator 15 recombine via the electrical load. At that time, electrical energy can be supplied to the electrical load.

40 shows the case where the orbit of the injected carrier electron is bent and absorbed by the collector. The P-type semiconductor 10 and the N-type semiconductor 11 form a PN junction. The negative voltage terminal of the first power source 31 is electrically connected to the first electrode 61 of the carrier accelerator, and the positive voltage terminal of the first power source 31 is electrically connected to the second electrode 62 of the carrier accelerator. Is connected. An electric field is generated between the first electrode 61 of the carrier accelerator and the second electrode 62 of the carrier accelerator. Electrons serving as carriers are injected from the N-type semiconductor 11 into the P-type semiconductor 10 and move in the acceleration channel 9 by the generated electric field. The negative voltage terminal of the second power supply 32 is electrically connected to the second electrode 62 of the carrier accelerator, and the positive voltage terminal of the second power source 32 is electrically connected to the third electrode 63 of the carrier accelerator. Is connected. An electric field is generated between the second electrode 62 of the carrier accelerator and the third electrode 63 of the carrier accelerator. Electrons injected by the generated electric field are accelerated in the acceleration channel 9. The negative voltage terminal of the third power source 33 is electrically connected to the third electrode 63 of the carrier accelerator, and the positive voltage terminal of the third power source 33 is electrically connected to the fourth electrode 64 of the carrier accelerator. Is connected. An electric field is generated between the third electrode 63 of the carrier accelerator and the fourth electrode 64 of the carrier accelerator. Electrons injected by the generated electric field are accelerated in the acceleration channel 9. The negative voltage terminal of the fourth power supply 34 is electrically connected to the fourth electrode 64 of the carrier accelerator, and the positive voltage terminal of the third power source 33 is electrically connected to the fifth electrode 65 of the carrier accelerator. Is connected. An electric field is generated between the fourth electrode 64 of the carrier accelerator and the fifth electrode 65 of the carrier accelerator. Electrons injected by the generated electric field are accelerated in the acceleration channel 9. The negative voltage terminal of the fifth power source 35 is electrically connected to the fifth electrode 65 of the carrier accelerator, and the positive voltage terminal of the fifth power source 35 is electrically connected to the sixth electrode 66 of the carrier accelerator. Is connected. An electric field is generated between the fifth electrode 65 of the carrier accelerator and the sixth electrode 66 of the carrier accelerator. Electrons injected by the generated electric field are accelerated in the acceleration channel 9. The N-type semiconductor 11 and the P-type semiconductor 10 form a PN junction. Since the power supplies of the first power supply 31, the second power supply 32, the third power supply 33, the fourth power supply 34, and the fifth power supply 35 are connected in series, the power supply 30 is synthesized by combining them. Indicated by. The positive voltage terminal of the power supply 30 is electrically connected to the sixth electrode 66 of the carrier accelerator. An electric field is generated by the positive charge of the sixth electrode 66 of the carrier accelerator. Electrons are injected from the N-type semiconductor 11 to the P-type semiconductor 10 by the generated electric field. The injected electrons travel in the acceleration channel 9 on the surface of the P-type semiconductor 10. Since the positive charge accumulated in the sixth electrode 66 of the carrier accelerator is attracted by the attraction force based on Coulomb's law, the injected electrons are directed in the direction of the sixth electrode 66 of the carrier accelerator. Move. When the injected electrons move, they also contribute to the electric field generated by other accelerating electrodes other than those placed in the insulator. The P-type semiconductor 10 is not straight but bent, and even if the surface of the P-type semiconductor 10 moves linearly, the P-type semiconductor 10 cannot reach the sixth electrode 66 of the carrier accelerator, and the insulator 8 ) Is arranged. The positive voltage terminal of the carrier track deflection power supply 90 is electrically connected to the carrier track deflection positive electrode 91, and the negative voltage terminal of the carrier track deflection power supply 90 is electrically connected to the carrier track deflection negative electrode 92. The electric field generated between the carrier orbital deflection positive electrode 91 and the carrier orbital deflection negative electrode 92 bends an emergency trajectory of electrons injected onto the surface of the P-type semiconductor. As a result, the injected electrons move in the direction of the electron absorption collector 26 and are finally collected by the electron absorption collector 26.

The electron absorption collector 26 is electrically connected to the negative voltage terminal of the carrier accumulator 15, and the N-type semiconductor 11 is electrically connected to the positive voltage terminal of the carrier accumulator 15. Electrons absorbed by the electron absorption collector 26 reach the negative electrode of the carrier accumulator 15. Holes injected from the P-type semiconductor 10 into the N-type semiconductor 11 reach the positive electrodes of the carrier accumulator 15. As a result, positive and negative charges are accumulated in the carrier accumulator 15. Therefore, when electrical loads are connected to both terminals of the carrier accumulator 15, holes and electrons accumulated in the carrier accumulator 15 recombine via the electrical load. At that time, electrical energy can be supplied to the electrical load. In addition, although the electric field is used to bend the trajectory of the injected electron in this figure, it is also possible to use a magnetic field to bend the emergency trajectory of the electron. The present invention also includes a method of creating a magnetic field by arranging a magnet around the trajectory of injected electrons and bending the emergency trajectory of the electron by the magnetic field produced.

The following describes the details of the deflection scheme using the deflection stimulus. The case where the N-type semiconductor 11 is used as the carrier output material 1 and the P-type semiconductor 10 is used as the channel formation material 2 is shown below. 41 shows a case where the orbit of the injected carrier electron is bent and collected by the electron absorption collector 26. The P-type semiconductor 10 and the N-type semiconductor 11 form a PN junction. The negative voltage terminal of the first power source 31 is electrically connected to the N-type semiconductor 11, and the positive voltage terminal of the first power source 31 is electrically connected to the first electrode 61 of the carrier accelerator. An electric field is generated between the first electrode 61 of the carrier accelerator and the N-type semiconductor 11. Electrons serving as carriers are injected from the N-type semiconductor 11 into the P-type semiconductor 10 by the generated electric field. The injected carrier travels in the acceleration channel 9. The negative voltage terminal of the second power supply 32 is electrically connected to the first electrode 61 of the carrier accelerator, and the positive voltage terminal of the first power source 31 is electrically connected to the second electrode 62 of the carrier accelerator. Is connected. An electric field is generated between the first electrode 61 of the carrier accelerator and the second electrode 62 of the carrier accelerator. Electrons injected by the generated electric field are accelerated in the acceleration channel 9. The negative voltage terminal of the third power source 33 is electrically connected to the second electrode 62 of the carrier accelerator, and the positive voltage terminal of the third power source 33 is electrically connected to the third electrode 63 of the carrier accelerator. Is connected. An electric field is generated between the second electrode 62 of the carrier accelerator and the third electrode 63 of the carrier accelerator. Electrons injected by the generated electric field are accelerated in the acceleration channel 9. The negative voltage terminal of the fourth power supply 34 is electrically connected to the third electrode 63 of the carrier accelerator, and the positive voltage terminal of the third power source 33 is electrically connected to the fourth electrode 64 of the carrier accelerator. Is connected. An electric field is generated between the third electrode 63 of the carrier accelerator and the fourth electrode 64 of the carrier accelerator. Electrons injected by the generated electric field are accelerated in the acceleration channel 9. The negative voltage terminal of the fifth power source 35 is electrically connected to the fourth electrode 64 of the carrier accelerator, and the positive voltage terminal of the fifth power source 35 is electrically connected to the fifth electrode 65 of the carrier accelerator. Is connected. An electric field is generated between the fourth electrode 64 of the carrier accelerator and the fifth electrode 65 of the carrier accelerator. Electrons injected by the generated electric field are accelerated in the acceleration channel 9.

FIG. 42 shows a plan view of the case in which electrons are subjected to magnetic field deflection in the acceleration channel and the orbit is bent and collected by the electron absorption collector in the field effect development of the present invention. The N-type semiconductor 11 forms a PN junction with the P-type semiconductor 10. Since the power supplies of the first power supply 31, the second power supply 32, the third power supply 33, the fourth power supply 34, and the fifth power supply 35 are connected in series, the power supply ( 30). The positive voltage terminal of the power supply 30 is electrically connected to the carrier accelerator fifth electrode 65, and the negative voltage terminal of the power supply 30 is electrically connected to the N-type semiconductor 11. An electric field is generated between the fifth electrode 65 of the carrier accelerator and the N-type semiconductor 11. Electrons are injected from the N-type semiconductor 11 to the P-type semiconductor 10 by the generated electric field. The injected electrons move in the acceleration channel 9 on the surface of the P-type semiconductor 10. Since the positive charge accumulated in the fifth electrode 65 of the carrier accelerator is attracted by the attraction force based on Coulomb's law, the injected electrons are directed in the direction of the fifth electrode 65 of the carrier accelerator. Move. When the injected electrons move, they also contribute to the electric field generated by other accelerating electrodes disposed in the insulator. As shown in the figure, the P-type semiconductor 10 is not straight but bent, and even if the surface of the P-type semiconductor 10 is moved linearly, it cannot reach the fifth electrode 65 of the carrier accelerator. The insulator 8 is arranged in the straight direction. As shown in FIG. 41, carrier orbital deflection N-pole 93 and carrier orbital deflection S-pole 94 are disposed on both sides of the P-type semiconductor. The magnetic field lines starting from the carrier orbital deflection N-pole 93 are directed toward the carrier orbital deflection S-pole 94 so that a magnetic field is generated from above and below the P-type semiconductor. As the electrons, which are carriers, move in the magnetic field, the trajectory of the electrons is bent. In other words, the generated magnetic field causes the orbit to bend under the force of Lorentz when electrons move on the surface of the P-type semiconductor. As shown in FIG. 42, the trajectory through which the electrons move is bent to reach the electron absorption collector 26 and collected by the electron absorption collector 26. The electron absorption collector 26 is electrically connected to the negative voltage terminal of the energy accumulator 15, and the N-type semiconductor 11 is electrically connected to the positive voltage terminal of the energy accumulator 15. Electrons absorbed by the electron absorption collector 26 reach the negative electrode of the energy accumulator 15. Holes injected from the P-type semiconductor 10 into the N-type semiconductor 11 reach the positive electrodes of the energy accumulator 15. As a result, the positive and negative charges are stored in the energy accumulator 15. Therefore, when electrical loads are connected to both terminals of the energy accumulator 15, holes and electrons accumulated in the energy accumulator 15 are recombined via the electrical load. At that time, electrical energy can be supplied to the electrical load.

[Effect of invention 10]

According to the field effect power generation device according to claim (13), in addition to the action and effect by the configuration described in claim (5), heat energy generated in the electron absorption collector 26 is effectively used for generation of electrical energy. I use it. That is, the thermal conductor is arranged in a state in which the thermal energy generated in the electron absorption collector 26 is well conducted to the thermal conductor. When electrons collide with the electron absorption collector 26, thermal energy is generated in the electron absorption collector 26. The generated heat energy is well transferred to the thermal conductor and the temperature of the thermal conductor rises. The thermal conductors are arranged in a state in which the thermal conductivity with the carrier output material 1 and the channel forming material 2 is good. The thermal energy delivered to the heat conductor is well conducted to the carrier output material 1 and the channel forming material 2. As a result, the temperature of the channel forming material 2 rises. The electron emission in the case where the temperature of the substance rises is described below.

43 is a formula of hot electron emission derived by S. Dushman (1923) described on page 45 of the reference book Electronic Engineering Principles, by John D. Ryder (Prentice-Hall, Inc.). In the equation, the current to be emitted is proportional to about two times the absolute temperature (T) of the cathode. 44 shows the emission characteristics of electrons whose characteristic curves were calculated for tungsten based on the formula of S. Dushman (1923) thermal electron emission. The figure shows that the number of electrons to be emitted increases exponentially with respect to the absolute temperature T of the cathode. In the field effect power generation device of the present invention, since thermal energy is conducted from the heat conductor to the channel forming material 2 and the absolute temperature T of the channel forming material 2 rises, a large amount of electrons are generated from the channel forming material 2. Is imitated. The electrical energy accumulated in the energy accumulator 15 is increased by the emission of a large amount of electrons. The above energy circulation path forms a positive feedback system, and the power generation amount increases with time, and the temperature of each component rises. Therefore, it is necessary to set the limit to the amount of power generation or the temperature of the part, and to set it to normal operation by lowering the voltage of the power supply supplied to the electrode 60 of the carrier accelerator when the limited area exceeds the limited area. On the other hand, the temperature rise of the channel forming material 2 is a result of the conversion of the kinetic energy of the emergency electrons into thermal energy. That is, the energy of the source of this power generator is generated by the effect that an electric field acts on an electron. In conclusion, if a positive feedback system is constructed using energy generated by the acceleration of the field effect of electrons, it is possible to generate electrical energy very well. In addition, since there is little energy lost by applying an electric field, the power generation efficiency of the field effect generator of the present invention can be said to be very good.

[Effect of invention 11]

According to the field effect power generation device according to claim (14), in addition to the action and effect by the configuration described in claim (5) above, a carbon-based material is used as a carrier input material, and a sub-? By arranging nanometer materials, it is possible to construct a power generation device with good efficiency. The case where sub-nanometer size irregularities are set on the surface of the channel forming material 2 is described below. 45 shows a case where a carbon-based material is used as the channel forming material 2. In the figure, the carbon-based material 76 is disposed on the upper surface of the substrate 19, and the sub-nanometer material 75 is disposed on the upper surface. Examples of the carbonaceous material 76 include graphene, graphite, and the like. Specific examples of the sub-nanometer material 75 include ruthenium dioxide and the like. The carbonaceous material 76 and the sub-nanometer material 75 are enlarged in FIG. 46. When ruthenium tetraoxide and the carbon-based material react, ruthenium dioxide, which is a sub-nanometer material 75, is deposited on the surface of the carbon-based material 76. Since the size of ruthenium dioxide is less than 1 nanometer, electrons injected into the channel forming material 2 accelerate and progress while flying between the sub-nanometer materials 75. By using the sub-nanometer material 75, the concentration effect of the electric field is remarkably exhibited, so that the number of electrons to be emitted is increased and the efficiency of the field effect generator of the present invention is improved.

[Effect of Invention 12]

According to the field effect power generation device according to claim (15), in addition to the action and effect by the configuration described in claim (5), the output voltage can be controlled by adjusting the voltage of the power supply used in the carrier accelerator. As a result, the rise in temperature is suppressed and it becomes possible to develop a durable device. Fig. 47 is a sectional view of the field effect power generation device in which the output voltage is controlled by switching. In the figure, the positive voltage terminal of the first power supply 31 is electrically connected to the first electrode 61 of the carrier accelerator. The negative voltage terminal of the first power source 31 is electrically connected to the carrier output material 1 via the start switch 101 of the mode 1. A first power source 31 is used to inject electrons that are carriers from the carrier input and output material 1 into the channel forming material 2. The negative voltage terminal of the second power supply 32 is electrically connected to the first electrode 61 of the carrier accelerator, and the positive voltage terminal of the second power source 32 is electrically connected to the second electrode 62 of the carrier accelerator. Is connected. The negative voltage terminal of the third power source 33 is electrically connected to the second electrode 62 of the carrier accelerator, and the positive voltage terminal of the third power source 33 is electrically connected to the third electrode 63 of the carrier accelerator. Is connected. The negative voltage terminal of the fourth power source 34 is electrically connected to the third electrode 63 of the carrier accelerator, and the positive voltage terminal of the fourth power source 34 is electrically connected to the fourth electrode 64 of the carrier accelerator. Is connected.

In the mode 1 of the field effect generation, the start switch 101 of the mode 1 is in a conducting state, and the start switch 102 of the mode 2 is in a non conducting state. The periphery of the emitter 105 of the first stage is enlarged and shown in FIG. An electric field is generated between the first electrode 61 of the carrier acceleration device to which the positive voltage is applied and the carrier output material 1 to which the negative voltage is applied, and electrons which are carriers from the carrier output material 1 by the action of the electric field. Is injected into the channel forming material 2. At that time, the potential barrier between the carrier output material 1 and the channel forming material 2 is caused by the tunnel effect by an electric field generated between the first electrode 61 and the carrier output material 1 of the carrier accelerator. Electrons pass through. The injected electrons move the surface of the channel forming material 2 in the acceleration channel 9. The radius of curvature of the tip of the channel forming material 2 is assumed to be sufficiently small. Examples of the channel forming material 2 include carbon nanotubes, carbon wall and graphene. The carrier output material 1 and the channel forming material 2 are electrically connected. However, when the channel forming material 2 is a carbon-based material, it is necessary to apply a special bonding method in order to electrically connect the carrier output material 1 and the channel forming material 2. That is, when titanium is used as an example of the carrier output material 1, the electrical connection is favorably performed with the carbon-based channel forming material 2 at 1100 ° C. In the feedback electric field electric generator of the present invention, since the carrier output material 1 is heated to a high temperature, a good power generation efficiency can be obtained by electrically connecting the carrier output material 1 and the channel forming material 2 to a high temperature state. Can be.

Electrons injected into the channel forming material 2 are accelerated in the acceleration channel 9 by an electric field generated from the first electrode 61 of the carrier accelerator, so that the kinetic energy of the electrons is increased. Electrons having a large kinetic energy arrive at the irreversible process generator 4 and are emitted from the channel forming material 2. At this time, a potential barrier corresponding to the work function between the channel forming material 2 and the vacuum passes through the generated electric field based on the tunnel effect, and electrons are emitted in the vacuum.

Since the field effect power generation device is cylindrical in shape, electrons as carriers travel in the direction of the axis under the force of axis symmetry, impinging on and absorbing the electron absorption collector 127 in the first stage. Electrons absorbed by the electron absorption collector 127 in the first stage move to the energy accumulator 115 of the mode 1. On the other hand, holes retaining positive charges remain in the emitter 105 of the first stage that outputs electrons as carriers. The holes move to the energy accumulator 115 in mode 1, where electrons and holes form a dipole. The electrons reaching the electron absorption collector 127 of the first stage move to the energy accumulator 115 of the mode 1, and since electrons hardly remain in the electron absorption collector 127 of the first stage, the first The path of electrons approaching the electron-absorbing collector 127 of the stage is hardly disturbed. That is, since electrons and holes form a dipole in the energy accumulator 115 of the mode 1, the negative charge retained by the electrons hardly affects the direction of movement of the subsequent electrons. The hole also moves from the emitter 105 in the first stage to the energy accumulator 115 in mode 1, where the electrons and holes form a dipole, so that the positive charge held by the hole is channeled from the carrier output material 1 It is a feature of the power generation device of the present invention that the movement of electrons moving to the forming material 2 is hardly prevented and good power generation is performed. In the preceding power generation device, since electrons and holes remain in the original material and obstruct the movement of subsequent carriers, it is difficult to realize high efficiency power generation.

The emitted electrons are accelerated and collide with the electron absorption collector 127 in the first stage, so that the temperature of the electron absorption collector 127 in the first stage increases. The heat energy of the electron absorption collector 127 of the first stage is conducted to the emitter 106 of the second stage via the heat conductor 120 of the mode 1, so that the temperature of the emitter 106 of the second stage is To rise. As the temperature of the emitter 106 in the second stage increases, the kinetic energy held by the electrons in the emitter 106 in the second stage increases.

In mode 2 of the field effect generation, the start switch 101 of mode 1 is in a non-conductive state, and the start switch 102 of mode 2 is in a conductive state. In FIG. 47, the positive voltage terminal of the fifth power source 35 is electrically connected to the fifth electrode 65 of the carrier accelerator. The negative voltage terminal of the fifth power source 35 is electrically connected to the carrier output material 1 via the initiation switch 102 of the mode 2. The negative voltage terminal of the sixth power source 36 is electrically connected to the fifth electrode 65 of the carrier accelerator, and the positive voltage terminal of the sixth power source 36 is electrically connected to the sixth electrode 66 of the carrier accelerator. Is connected. The negative voltage terminal of the seventh power source 37 is electrically connected to the sixth electrode 66 of the carrier accelerator, and the positive voltage terminal of the seventh power source 37 is electrically connected to the seventh electrode 67 of the carrier accelerator. Is connected. The negative voltage terminal of the eighth power source 38 is electrically connected to the seventh electrode 67 of the carrier accelerator, and the positive voltage terminal of the eighth power source 38 is electrically connected to the eighth electrode 68 of the carrier accelerator. Is connected.

The periphery of the emitter 106 of the second stage is enlarged and shown in FIG. An electric field is generated between the fifth electrode 65 of the carrier acceleration device to which the positive voltage is applied and the carrier output material 1 to which the negative voltage is applied. Electrons are injected into the channel forming material 2. At that time, the potential barrier between the carrier output material 1 and the channel forming material 2 is caused by the tunnel effect by an electric field generated between the fifth electrode 65 and the carrier output material 1 of the carrier accelerator. Electrons pass through. The injected electrons move in the acceleration channel 9. The radius of curvature of the tip of the channel forming material 2 is assumed to be sufficiently small. Examples of the channel forming material 2 include carbon nanotubes, carbon wall and graphene. The carrier output material 1 and the channel forming material 2 are electrically connected. However, when the channel forming material 2 is a carbon material, it is necessary to apply a special bonding method in order to electrically connect the carrier output material 1 and the channel forming material 2. That is, it is one of the specific examples to realize good electrical connection by using high temperature titanium and carbon-based materials. The electrons injected into the channel forming material 2 are accelerated in the acceleration channel 9 by the electric field generated from the electrodes of the carrier accelerator, so that the kinetic energy of the electrons is increased. Electrons having a large kinetic energy arrive at the irreversible process generator 4 and are emitted from the channel forming material 2. At this time, the potential barrier corresponding to the work function between the channel forming material 2 and the vacuum passes through the generated electric field based on the tunnel effect and electrons are emitted in the vacuum.

Since the field effect power generation device has a cylindrical shape, electrons serving as carriers travel in the direction of the axis under the force of axis symmetry, impinge on and are absorbed by the electron absorption collector 128 in the second stage. The electrons absorbed by the electron absorption collector 128 of the second stage move to the energy accumulator 116 of the mode 2. On the other hand, holes retaining positive charges remain in the emitter 106 of the second stage that outputs electrons as carriers. The holes move to the energy accumulator 116 in mode 2, where electrons and holes form a dipole. The electrons reaching the electron absorption collector 128 of the second stage move to the energy accumulator 116 of the mode 2, and since electrons hardly remain in the electron absorption collector 128 of the second stage, subsequent electrons of the second stage There is little disturbance of the path of electrons approaching the electron absorption collector 128. That is, since electrons and holes form a dipole in the energy accumulator 116 of mode 2, the negative charge retained by the electrons hardly affects the direction of movement of the subsequent electrons. Since the hole also moves to the energy accumulator 116 in mode 2 to the carrier output material 1, where electrons and holes form a dipole, the positive charge retained by the holes is transferred from the carrier output material 1 to the channel forming material ( When moving to 2), there is almost no disturbance of the movement of the electrons, and it is a feature of the power generation device of the present invention that good power generation is performed. In the preceding power generation device, since electrons and holes remain in the original material and obstruct the movement of subsequent carriers, it is difficult to realize high efficiency power generation. The emitted electrons are accelerated and collide with the electron absorption collector 128 of the second stage, so that the temperature of the electron absorption collector 128 of the second stage increases. The heat energy of the electron absorption collector 128 of the second stage is conducted to the emitter 105 of the first stage via the heat conductor 121 of the mode 2, and the temperature of the emitter 105 of the first stage is To rise. As the temperature of the emitter 105 in the first stage increases, the kinetic energy held by the electrons in the emitter 105 in the first stage increases. Therefore, when mode 1 starts again, since the kinetic energy possessed by the electrons in the emitter 105 of the first stage is large, the number of electrons to be emitted increases. By alternately repeating Mode 1 and Mode 2 of the field effect generation, the temperature of the emitter of the first stage and the emitter of the second stage gradually rises to increase the number of electrons that are emitted. Therefore, in the field effect generator of the present invention, the amount of power generation increases with time. In addition, since the number of electrons to be emitted is controlled by opening and closing the start switch 101 of mode 1 and the start switch 102 of mode 2, the temperature rise of the entire apparatus is suppressed. As a result, by adopting a method of controlling the output voltage by switching and giving feedback of the thermal energy, the field effect generator is durable and the power generation efficiency is improved.

1 is a diagram illustrating a case in which positive and negative charges exist in a material;
2 is a view illustrating a positive voltage terminal of a power source and a negative voltage terminal of a power source in the field effect generator of the present invention;
3 is a diagram illustrating a case where an insulator exists between a power positive voltage terminal and a power negative voltage terminal in the field effect generator of the present invention;
4 is a diagram illustrating a case in which an energy accumulator is connected to a power positive voltage terminal and a power negative voltage terminal in the field effect generator of the present invention;
FIG. 5 is a diagram illustrating a case where an electrical load is connected in parallel with an energy accumulator in the field effect generator of the present invention; FIG.
FIG. 6 is a view showing a case where the carrier output material and the channel forming material are electrically connected in the field effect power generation device of the present invention, and the channel forming material is disposed between the carrier output material and the electron absorption collector;
7 illustrates a potential barrier generator between a carrier output material and a channel forming material and an irreversible process generator at a boundary between the channel forming material in the field effect power generation device of the present invention;
8 shows an acceleration channel on the surface of a channel forming material in the field effect generator of the present invention;
FIG. 9 is a view illustrating a case in which a carrier slides on a surface of a channel forming material in the field effect power generation device of the present invention; FIG.
10 is a view showing a case in which electrons emit from a channel forming material in the field effect generator of the present invention;
11 is a block diagram of a field effect generator in the field effect generator of the present invention;
12 is a block diagram showing the inside of a carrier accelerator in the field effect generator of the present invention;
13 is a view showing an energy accumulator in the field effect generator of the present invention,
14 is a view showing an input mode of the energy accumulator in the field effect generator of the present invention;
15 is a view showing the output mode of the energy accumulator in the field effect generator of the present invention,
16 shows a specific example of a monopole,
17 is a view showing a dipole composed of positive and negative charges,
18 is a diagram showing a case where a dipole is formed in a positive charge accumulating conductor and a negative charge accumulating conductor;
19 is a diagram illustrating a case in which electrons approach a dipole;
20 is a diagram illustrating a case in which a carrier accelerator is constituted by a plurality of electrodes in the field effect power generation device of the present invention;
21 is a view showing a case in which an acceleration channel is formed between a channel forming material and an insulator in the field effect power generation device of the present invention;
22 is a view showing the operation of the carrier in the vicinity of the carrier output material and the channel forming material in the field effect generator of the present invention;
FIG. 23 is a view showing electrodes of two carrier accelerators in an insulator when the channel forming material is a P-type semiconductor in the field effect generator of the present invention; FIG.
24 is an electric field line formed by the first electrode of the carrier accelerator and the second electrode of the carrier accelerator in the field effect generator of the present invention;
FIG. 25 is a view showing a case where there is a potential barrier generation unit present between a carrier output material and a channel forming material in the field effect power generation device of the present invention; FIG.
FIG. 26 illustrates a case in which electrons pass from a carrier output material to a channel forming material by a quantum mechanical tunnel effect.
27 is a view showing a case where positive charges are accumulated in a carrier output material and negative charges are accumulated in a channel forming material;
FIG. 28 is a reversible phenomenon and shows a case in which electrons return from a channel forming material to a carrier output material; FIG.
29 is a diagram illustrating a case where an electron passes through a potential barrier by a quantum mechanical tunnel effect,
30 shows a case in which electrons are emitted over a potential barrier by thermal electron emission,
FIG. 31 shows a case where the thickness of the potential barrier becomes thin due to a strong electric field, and electrons penetrate through the quantum mechanical tunnel effect. FIG.
32 is a view showing a case in which the flying electrons approach the electron absorption collector through the suppressor electrode in the field effect power generation device of the present invention;
33 shows the statistical energy distribution of electrons in a material,
34 is a diagram representing a threshold value of energy T corresponding to an electron potential barrier;
35 shows an acceleration channel appearing at the boundary of a channel forming material and an insulator in the field electric power generation of the present invention;
36 is a view illustrating a case in which a secondary electron emission member is disposed in a convex region of a channel forming material and electrons are emitted in the field effect power generation device of the present invention;
37 is a view showing a case in which electrons as carriers propagate while colliding with a secondary electron emission member in an acceleration channel in the field effect power generation device of the present invention;
38 is a diagram illustrating a case where electrons serving as carriers bend their emergency trajectories in an acceleration channel in the field effect generation device of the present invention;
39 is a plan view in the case where electrons are subjected to electric field deflection in the acceleration channel in the field effect power generation device of the present invention and the orbit is bent and collected by the electron absorption collector;
40 is a plan view in the case where electrons are moved within an acceleration channel due to electric field deflection in the field effect power generation device of the present invention, and are collected by an electron absorption collector;
FIG. 41 is a view showing a case in which electrons are moved within an acceleration channel due to magnetic field deflection and collected by an electron absorption collector in the field effect power generation device of the present invention; FIG.
42 is a plan view in the case where electrons are subjected to magnetic field deflection in the acceleration channel in the field effect power generation device of the present invention and the orbit is bent and collected in the electron absorption collector;
43 shows the formula of thermal electron emission derived by S.Dushman,
44 shows the electron emission characteristics of tungsten calculated on the basis of the formula of thermal electron emission;
45 is a view showing a case where a carbon-based material is used as a channel forming material in the field effect power generation device of the present invention;
46 is an enlarged view of a carbon-based material and a sub-nanometer material as a channel forming material in the field effect power generation device of the present invention;
47 is a cross-sectional view of a device for controlling an output voltage by a switching method in the field effect power generation device of the present invention;
48 is an enlarged view of the periphery of the emitter of the first stage in the field effect generator of the present invention;
Fig. 49 is a sectional view in the case where the N-type semiconductor is used as the carrier output material and the P-type semiconductor is used as the channel forming material in the field effect generator according to the first embodiment of the present invention.
50 is a cross-sectional view when a two-stage cascade feedback system is applied in the field effect generator according to the second embodiment of the present invention;
FIG. 51 is a view showing a part of an appearance view when a two-stage cascade feedback system is applied in the field effect generator according to the second embodiment of the present invention; FIG.
Fig. 52 is a sectional view of the periphery of the carrier output material of the first stage in the case where the two-stage cascade feedback system is applied to the field effect generator according to the second embodiment of the present invention.
Fig. 53 is a sectional view of the periphery of the carrier output material of the second stage in the case where the two-stage cascade feedback system is applied to the field effect generator according to the second embodiment of the present invention.
Fig. 54 is a sectional view of the periphery of the carrier output material in the first stage of returning when the two-stage cascade feedback system is applied to the field effect power generation device according to the second embodiment of the present invention.
Fig. 55 is a sectional view of the periphery of the second-stage carrier output material to the home when the two-stage cascade feedback system is applied to the field effect power generation device according to the second embodiment of the present invention.
56 is a cross-sectional view when a thermal conductivity is used in an example in which a two-stage cascade feedback method is applied to a field effect power generation device according to a second embodiment of the present invention;
Fig. 57 is a sectional view when employing the three-stage cascade method in the field effect generator according to the third embodiment of the present invention;
Fig. 58 is a sectional view of the periphery of the carrier output material of the third stage when the field effect power generation device according to the third embodiment of the present invention is adopted;
Fig. 59 is a sectional view when employing four electrodes as a carrier accelerator in the field effect generator according to the fourth embodiment of the present invention;
60 is an enlarged cross-sectional view of a periphery of a carrier output material in the field effect generator according to the fourth embodiment of the present invention;
Fig. 61 is a sectional view in the state of mode 0 when the alternating power generation system is adopted in the field effect generator according to the fifth embodiment of the present invention;
62 is a cross-sectional view in a state of mode 1 when the alternating power generation method is adopted in the field effect generator according to the fifth embodiment of the present invention;
63 is a cross-sectional view in a state of mode 2 when the alternate power generation system is adopted in the field effect generator according to the fifth embodiment of the present invention;
64 is an external view in the state of mode 1 when the alternating power generation method is adopted in the field effect generator according to the fifth embodiment of the present invention;
Fig. 65 is a sectional view when an N-type semiconductor is used as a carrier output material and a P-type semiconductor is used as a channel formation material in the field effect generator according to the sixth embodiment of the present invention.
Fig. 66 is a sectional view when an N-type semiconductor is used as a carrier output material and a P-type semiconductor is used as a channel formation material in the field effect generator according to the seventh embodiment of the present invention.
67 is a cross-sectional view when an N-type semiconductor is used as a carrier output material and a P-type semiconductor is used as a channel formation material in the field effect generator according to the eighth embodiment of the present invention;
Fig. 68 is a sectional view of the case where both the holes and the electrons are used as carriers and the electrodes are insulated in the field effect generator according to the ninth embodiment of the present invention;
69 is a sectional view when both the holes and the electrons are used as carriers in the field effect power generation device according to the ninth embodiment of the present invention, and the electrodes are not insulated;
70 is a sectional view when both the holes and the electrons are used as carriers in the field effect power generation device according to the ninth embodiment of the present invention, and the channel forming material is inclined;
71 is a plan view when using both holes and electrons as a carrier in the field effect generator according to the ninth embodiment of the present invention;
72 is a plan view when an N-type semiconductor is used as a carrier output material and a P-type semiconductor is used as two parallel channel forming materials in the field effect generator according to the tenth embodiment of the present invention;
73 is a sectional view when an N-type semiconductor is used as a carrier output material, a P-type semiconductor is used as a channel forming material, and the channel forming material is inclined in the field effect generator according to the eleventh embodiment of the present invention;
74 is an external view of the case where graphene is used as a channel forming material in the field effect generator according to the twelfth embodiment of the present invention;
75 is a cross-sectional view in the case where graphene is used as the channel forming material in the field effect generator according to the twelfth embodiment of the present invention;
FIG. 76 is an enlarged cross-sectional view of the vicinity of an electron absorption collector in the case where graphene is used as the channel forming material in the field effect generator according to the twelfth embodiment of the present invention; FIG.
77 is a diagram showing the arrangement of carrier absorbing graphene and carrier emitting graphene in the field effect generator according to the twelfth embodiment of the present invention;
78 is a cross-sectional view in the case where the thermal feedback system is adopted using the carrier absorbing graphene and the carrier emitting graphene in the field effect generator according to the twelfth embodiment of the present invention;
79 is a sectional view when employing the thermal feedback method in the field effect generator according to the thirteenth embodiment of the present invention;
80 is an enlarged cross-sectional view of a periphery of a carrier output material of a road in the case of employing the thermal feedback method in the field effect generator according to the thirteenth embodiment of the present invention;
81 is an enlarged cross-sectional view showing the periphery of a return carrier material when the field effect power generation device according to a thirteenth embodiment of the present invention is adopted;
82 is a sectional view when employing the thermal feedback method in the field effect generator according to the fourteenth embodiment of the present invention;
83 is a sectional view of the mode 1 state in the case where the alternate power generation system is adopted in the field effect generator according to the fifteenth embodiment of the present invention;
84 is a sectional view of a mode 2 state in a case where an alternating power generation system is adopted in a field effect generator according to a fifteenth embodiment of the present invention; and
85 is a cross-sectional view when the four-stage thermal feedback method is adopted in the field effect generator according to the sixteenth embodiment of the present invention.

[First embodiment of the present invention]

49 is a cross-sectional view of an example in the case of using the N-type semiconductor as the carrier output material 1 and the P-type semiconductor as the channel forming material 2 in the field effect power generation device according to the first embodiment of the present invention. To show. As shown in FIG. 49, the negative voltage terminal of the first power supply 31 is connected to the N-type semiconductor 11. The positive voltage terminal of the first power supply 31 is connected to the first electrode 61 of the carrier accelerator. An electric field is generated between the first electrode 61 of the carrier accelerator and the N-type semiconductor 11, and electrons as carriers are injected into the P-type semiconductor 10 from the N-type semiconductor 11. The first electrode 61 of the carrier accelerator acts as an injection electrode. The carrier acquires kinetic energy by moving electrons as carriers in the acceleration channel 9 between the insulator 8 and the P-type semiconductor 10. The positive voltage terminal of the second power supply 32 is connected to the second electrode 62 of the carrier accelerator. The negative voltage terminal of the second power supply 32 is connected to the first electrode 61 of the carrier accelerator. An electric field is generated between the second electrode 62 of the carrier accelerator and the first electrode 61 of the carrier accelerator, and the electron as a carrier is an acceleration channel 9 between the insulator 8 and the P-type semiconductor 10. As the electrons move inside, the electrons acquire kinetic energy. In other words, the second electrode 62 of the carrier accelerator acts as a sliding electrode. The positive voltage terminal of the third power source 33 is connected to the third electrode 63 of the carrier accelerator. The negative voltage terminal of the third power source 33 is connected to the second electrode 62 of the carrier accelerator. An electric field is generated between the third electrode 63 of the carrier accelerator and the second electrode 62 of the carrier accelerator, and the electron as a carrier is an acceleration channel between the insulator 8 and the P-type semiconductor 10. (9) The electrons acquire kinetic energy as the electrons move through them. In other words, energy is supplied to the electrons. The stage of the P-type semiconductor 10 is in contact with a vacuum. The third electrode 63 of the carrier accelerator acts as an emission electrode. That is, electrons are slid and moved in the acceleration channel 9 on the surface of the P-type semiconductor 10 by the electric field effect, and electrons are emitted in the vacuum by the action of the third electrode 63 of the carrier accelerator. . The positive voltage terminal of the fourth power source 34 is connected to the fourth electrode 64 of the carrier accelerator. The negative voltage terminal of the fourth power source 34 is connected to the third electrode 63 of the carrier accelerator. An electric field is generated between the fourth electrode 64 of the carrier accelerator and the third electrode 63 of the carrier accelerator, and electrons, which are carriers, are accelerated in the acceleration channel 9, and electrons acquire kinetic energy. . In other words, the fourth electrode 64 of the carrier accelerator acts as an accelerating electrode. The negative voltage terminal of the fifth power source 35 is connected to the fifth electrode 65 of the carrier accelerator. The positive voltage terminal of the fifth power source 35 is connected to the fourth electrode 64 of the carrier accelerator. An electric field is generated between the carrier accelerator fifth electrode 65 and the fourth electrode 64 of the carrier accelerator, and electrons as carriers are decelerated in the acceleration channel 9. Since the electrons which fly by the action of this deceleration electric field are decelerated before colliding with the electron absorption collector 26, the speed at the time of collision becomes small. In other words, the fifth electrode 65 of the carrier accelerator acts as a suppressor electrode. When the speed of the emergency electrons decreases and collides with the electron absorption collector 26, the energy received by the electron absorption collector 26 from the emergency electrons decreases. Therefore, the temperature rise of the electron absorption collector 26 becomes small, and it can avoid that the electron absorption collector 26 becomes high temperature. When the electron absorption collector 26 becomes a high temperature, insulation breakdown, material deterioration, etc. are caused, but the advantage that temperature rise can be restrained by the deceleration electric field of the emergency electron shown in the same figure is exhibited. When the power generation output is increased, durability of the electron absorption collector 26 can be ensured by using the suppressor electrode, so that continuous operation of power generation can be performed. The negative voltage terminal of the sixth power source 36 is connected to the N-type semiconductor 11. The positive voltage terminal of the sixth power source 36 is connected to the sixth electrode 66 of the carrier accelerator. An electric field is generated between the sixth electrode 66 of the carrier accelerator and the N-type semiconductor 11, and electrons as carriers are injected into the P-type semiconductor 10 from the N-type semiconductor 11. The sixth electrode 66 of the carrier accelerator acts as an injection electrode. By moving electrons as carriers between the insulator 8 and the surface below the P-type semiconductor 10, the carriers acquire kinetic energy. The positive voltage terminal of the seventh power supply 37 is connected to the seventh electrode 67 of the carrier accelerator. The negative voltage terminal of the seventh power supply 37 is connected to the sixth electrode 66 of the carrier accelerator. An electric field is generated between the seventh electrode 67 of the carrier accelerator and the sixth electrode 66 of the carrier accelerator, and the electrons, which are carriers, move across the cross section of the P-type semiconductor 10. The acceleration channel 9 is reached. The seventh electrode 67 of the carrier accelerator acts as a sliding electrode. The positive voltage terminal of the eighth power supply 38 is connected to the eighth electrode 68 of the carrier accelerator. The negative voltage terminal of the eighth power supply 38 is connected to the seventh electrode 67 of the carrier accelerator. An electric field is generated between the eighth electrode 68 of the carrier accelerator and the N-type semiconductor 11, and electrons as carriers are introduced into the acceleration channel 9 between the insulator 8 and the P-type semiconductor 10. The electrons move so that the electrons acquire kinetic energy. The positive voltage terminal of the ninth power source 39 is connected to the ninth electrode 69 of the carrier accelerator. The negative voltage terminal of the ninth power source 39 is connected to the eighth electrode 68 of the carrier accelerator. An electric field is generated between the ninth electrode 69 of the carrier accelerator and the N-type semiconductor 11, and electrons, which are carriers, are electrons in the acceleration channel 9 between the insulator 8 and the P-type semiconductor 10. As it moves the electrons acquire kinetic energy. The eighth electrode 68 of the carrier accelerator and the ninth electrode 69 of the carrier accelerator serve as acceleration electrodes. The positive voltage terminal of the tenth power source 40 is connected to the tenth electrode 70 of the carrier accelerator. The negative voltage terminal of the tenth power source 40 is connected to the ninth electrode 69 of the carrier accelerator. An electric field is generated between the tenth electrode 70 of the carrier accelerator and the N-type semiconductor 11, and electrons as carriers are introduced into the acceleration channel 9 between the insulator 8 and the P-type semiconductor 10. As the electrons move, the electrons acquire kinetic energy. In the figure, when the carrier sufficiently acquires kinetic energy by the action of the carrier accelerator 3 and reaches the disadvantage in the cross section of the P-type semiconductor 10, electrons are emitted (emitted) in vacuum. . The emitted electrons are accelerated by being attracted by a force based on the Coulomb force by positive charges accumulated on the positive electrodes of the carrier accelerator 3. The accelerated electrons reach the electron absorption collector 26 and are absorbed by the electron absorption collector 26. In the same figure, an electric field is generated between the positive charge accumulated on the positive electrode of the upper carrier accelerator and the positive charge accumulated on the positive electrode of the lower carrier accelerator. The generated electric field acts in a direction in which the flying electrons easily reach the electron absorption collector 26. On the other hand, in the same figure, if the cross section of the P-type semiconductor 10 is oblique, electrons are emitted from a region where an angle occurs at the edge and the radius of curvature is small, so that the efficiency of electron emission is improved.

In addition, the cross-sectional inclination structure of the electron absorption collector 26 is shown in the same figure. Since the emergency electrons collide with the electron absorption collector 26 at an angle other than perpendicular to each other, the electrons are reflected to reach a narrow area inside and the electron absorption efficiency of the electron absorption collector 26 is improved. The electron absorption collector 26 is electrically connected to the negative voltage terminal of the energy accumulator 15, and the N-type semiconductor 11 is electrically connected to the positive voltage terminal of the energy accumulator 15. Electrons absorbed by the electron absorption collector 26 reach the negative electrode of the energy accumulator 15. Holes injected from the P-type semiconductor 10 into the N-type semiconductor 11 reach the positive electrodes of the energy accumulator 15. As a result, the positive and negative charges are stored in the energy accumulator 15. Therefore, when electrical loads are connected to both terminals of the energy accumulator 15, holes and electrons accumulated in the energy accumulator 15 are recombined via the electrical load. At that time, electrical energy can be supplied to the electrical load.

[Second embodiment of the present invention]

50 is a cross-sectional view of an example in which the two-stage cascade feedback method is applied in the field effect power generation device according to the second embodiment of the present invention. The field effect generator is cylindrical and part of its overview is shown in Fig. 51 by taking the upper left of the figure. As shown in FIG. 50, the entire field effect generator is stored in the vacuum vessel 300. In this figure, the negative voltage terminal of the first power source 31 is electrically connected to the carrier output material 131 of the first stage, and the positive voltage terminal of the first power source 31 is the first electrode 61 of the carrier accelerator. Is electrically connected). A first power source 31 is used to inject electrons that are carriers from the carrier input and output material 1 into the channel forming material 2. The negative voltage terminal of the second power supply 32 is electrically connected to the first power supply 61 of the carrier accelerator, and the positive voltage terminal of the second power source 32 is electrically connected to the second electrode 62 of the carrier accelerator. Is connected. The negative voltage terminal of the third power source 33 is electrically connected to the second electrode 62 of the carrier accelerator, and the positive voltage terminal of the third power source 33 is electrically connected to the third electrode 63 of the carrier accelerator. Is connected. The negative voltage terminal of the fourth power source 34 is electrically connected to the carrier output material 132 of the second stage, and the positive voltage terminal of the fourth power source 34 is electrically connected to the fourth electrode 64 of the carrier accelerator. Is connected. The negative voltage terminal of the fifth power source 35 is electrically connected to the fourth electrode 64 of the carrier accelerator, and the positive voltage terminal of the fifth power source 35 is electrically connected to the fifth electrode 65 of the carrier accelerator. Is connected. The negative voltage terminal of the sixth power source 36 is electrically connected to the fifth electrode 65 of the carrier accelerator, and the positive voltage terminal of the sixth power source 36 is electrically connected to the sixth electrode 66 of the carrier accelerator. Is connected.

The negative voltage terminal is electrically connected to the first output power supply 231 to the carrier output material 131 of the first stage, and the positive voltage terminal of the first power supply 31 to the return is the first of the carrier accelerator of the return home. It is electrically connected to the electrode 261. The negative voltage terminal of the return power source 32 is electrically connected to the first electrode 261 of the carrier acceleration device back, and the positive voltage terminal of the return power supply 32 is connected to the carrier acceleration device of the return home. It is electrically connected to the second electrode 262. The negative voltage terminal of the third power source 33 to the home is electrically connected to the second electrode 262 of the carrier accelerator to the home, and the positive voltage terminal of the third power source 33 to the home is connected to the carrier accelerator of the home It is electrically connected to the third electrode 263. The negative voltage terminal of the fourth power source 34 to the home is electrically connected to the carrier output material 132 of the second stage, and the positive voltage terminal of the fourth power source 34 to the home is the fourth of the carrier accelerator of the home. It is electrically connected to the electrode 264. The negative voltage terminal of the fifth power source 35 to the home is electrically connected to the fourth electrode 264 of the carrier accelerator to the home, and the positive voltage terminal of the fifth power source 35 to the home is connected to the carrier accelerator of the home It is electrically connected to the fifth electrode 265. The negative voltage terminal of the sixth power source 36 to the return is electrically connected to the fifth electrode 265 of the carrier acceleration device to the return, and the positive voltage terminal of the sixth power source 36 to the return is connected to the carrier accelerator of the return. It is electrically connected to the sixth electrode 266. The structure of the periphery of the carrier output material 131 of the first stage is the same as that shown in Fig. 52, and the channel forming material 2 is electrically coupled to the carrier output material 131 of the first stage. An electric field is generated between the first electrode 61 of the carrier accelerator to which the positive voltage is applied and the carrier output material 131 of the first stage to which the negative voltage is applied, and the carrier output material of the first stage From 131 electrons as carriers are injected into the channel forming material 2. The first electrode 61 of the carrier accelerator acts as an injection electrode. Electrons injected into the channel forming material 2 are emitted to the acceleration channel 9 via the irreversible process generator 4. The first electrode 61 of the carrier accelerator also acts as an emission electrode. Emitted electrons are accelerated in the acceleration channel 9 by the first electrode 61 of the carrier accelerator, the second electrode 62 of the carrier accelerator and the third electrode 63 of the carrier accelerator. The second electrode 62 of the carrier accelerator and the third electrode 63 of the carrier accelerator serve as acceleration electrodes. The accelerated electrons collide with and are absorbed by the electron absorption collector 127 of the first stage. Electrons absorbed by the electron absorption collector 127 in the first stage move to the energy accumulator 111 in the first stage. Since electrons are emitted from the carrier output material 131 of the first stage, holes remain in the carrier output material 131 of the first stage. The remaining holes move to the energy accumulator 111 of the first stage. In the energy accumulator 111 of the first stage, holes and electrons are accumulated by forming a dipole. The kinetic energy retained by the electrons emitted from the carrier output material 131 of the first stage is converted into thermal energy by impinging on the electron absorption collector 127 of the first stage. Therefore, the temperature of the electron absorption collector 127 in the first stage rises, and the generated heat is conducted to the insulator 8, so that the temperature of the insulator 8 increases. The heat of the insulator 8 is conducted to the carrier output material 132 of the second stage, and the temperature of the carrier output material 132 of the second stage rises. The kinetic energy of the electrons in the carrier output material 132 of the second stage which has become high becomes large. The structure of the periphery of the carrier output material 132 of the second stage is the same as that shown in Fig. 53, and the channel forming material 2 is electrically coupled to the carrier output material 132 of the second stage. An electric field is generated between the fourth electrode 64 of the carrier acceleration device to which the positive voltage is applied and the carrier output material 132 of the second stage to which the negative voltage is applied, and the carrier output material of the second stage by the electric field ( From 132 electrons as carriers are injected into the channel forming material 2. The fourth electrode 64 of the carrier accelerator acts as an injection electrode. The electrons injected into the channel forming material 2 by the action of the high temperature and the electric field are emitted to the acceleration channel 9 via the irreversible process generator 4. The fourth electrode 64 of the carrier accelerator also acts as an emission electrode. The emitted electrons are accelerated in the acceleration channel 9 by the fourth electrode 64 of the carrier accelerator, the fifth electrode 65 of the carrier accelerator and the sixth electrode 66 of the carrier accelerator. The fifth electrode 65 of the carrier accelerator and the sixth electrode 66 of the carrier accelerator serve as acceleration channels. The accelerated electrons collide with and are absorbed by the electron absorption collector 128 of the second stage.

The electrons absorbed by the electron absorption collector 128 of the second stage move to the energy accumulator 112 of the second stage. Since electrons are emitted from the carry output material 132 of the second stage, holes remain in the carrier output material 132 of the second stage. The remaining holes move to the energy accumulator 112 of the second stage. In the energy accumulator 112 of the second stage, holes and electrons are accumulated by forming a dipole. The kinetic energy held by the electrons output from the carrier output material 132 of the second stage is converted into thermal energy by impinging on the electron absorption collector 128 of the second stage. Therefore, the temperature of the electron absorption collector 128 of the 2nd stage rises, the heat which generate | occur | produces is conducted to the heat conductor 120 of mode 1, and the temperature of the heat conductor 120 of mode 1 raises. The heat of the heat conductor 120 in mode 1 is conducted to the heat energy supply 226 so that the temperature of the heat energy supply 226 rises. The heat of the heat energy supply 226 which has become hot is transferred to the insulator 8 so that the temperature of the insulator 8 rises. The heat of the insulator 8 is transferred to the carrier output material 331 of the first stage back home, and the temperature of the carrier output material 331 of the first stage back home rises. As a result, the kinetic energy of the electrons in the carrier output material 331 of the first stage to the return increases. The structure of the periphery of the carrier output material 331 of the 1st stage to a return is shown in FIG. The channel forming material 2 is electrically coupled to the carrier output material 331 of the first stage back. An electric field is generated between the first electrode 261 of the carrier acceleration device to which the positive voltage is applied and the carrier output material 331 of the first stage of the return to which the negative voltage is applied, and the first electric field is returned by the electric field. From the stage carrier output material 331, electrons as carriers are injected into the channel forming material 2. The first electrode 261 of the carrier acceleration device back home acts as an injection electrode. Electrons injected into the channel forming material 2 are emitted to the acceleration channel 9 via the irreversible process generator 4. The first electrode 261 of the carrier acceleration device back home also acts as an emission electrode. Emitted electrons are generated in the acceleration channel 9 by the first electrode 261 of the carrier accelerator back home, the second electrode 262 of the carrier accelerator back home and the third electrode 263 of the carrier accelerator back home. Is accelerated by The second electrode 262 of the carrier acceleration device back home and the third electrode 263 of the carrier acceleration device back home serve as acceleration electrodes. The accelerated electrons collide with and are absorbed by the electron absorption collector 227 of the first stage. Electrons absorbed by the electron absorption collector 227 of the first stage move to the energy accumulator 211 of the first stage to the return. Since electrons are emitted from the carrier output material 331 of the first stage back home, holes remain in the carrier output material 331 of the first stage back home. The remaining holes move to the energy accumulator 211 at the first stage of the return path. In the energy accumulator 211 at the first stage of the return path, holes and holes are accumulated by forming a dipole.

The kinetic energy retained by the electrons emitted from the carrier output material 331 of the first stage to the return is converted into thermal energy by impinging on the electron absorption collector 227 of the first stage. Therefore, the temperature of the electron absorption collector 227 of the first stage rises, and the generated heat conducts to the insulator 8, so that the temperature of the insulator 8 rises. The heat in the insulator 8 is conducted to the carrier output material 332 at the second stage of returning home so that the temperature of the carrier output material 332 at the second stage of returning home rises. The kinetic energy of the electrons in the carrier output material 332 at the second stage to the return to the high temperature increases. The structure of the periphery of the carrier output material 332 at the second stage of returning is shown in FIG. The channel forming material 2 is electrically coupled to the carrier output material 332 at the second stage back. An electric field is generated between the fourth electrode 264 of the carrier acceleration device to which the positive voltage is applied and the carrier output material 332 at the second stage of the return to which the negative voltage is applied, and the second electric field is returned by the electric field. From the stage carrier output material 332, electrons as carriers are injected into the channel forming material 2. The fourth electrode 264 of the carrier acceleration device back home acts as an injection electrode. The electrons injected into the channel forming material 2 by the action of the high temperature and the electric field are emitted to the acceleration channel 9 via the irreversible process generator 4. The fourth electrode 264 of the carrier acceleration device back home also acts as an emission electrode. Emitted electrons are generated in the acceleration channel 9 by the fourth electrode 264 of the carrier accelerator back home, the fifth electrode 265 of the carrier accelerator back home and the sixth electrode 266 of the carrier accelerator back home. Is accelerated by The fifth electrode 265 of the carrier acceleration device back home and the sixth electrode 266 of the carrier acceleration device back home serve as acceleration electrodes. The accelerated electrons collide with and are absorbed by the electron absorption collector 228 of the second stage. Electrons absorbed by the electron absorption collector 228 of the second stage move to the energy accumulator 212 of the second stage back to the ear. Since electrons are emitted from the carrier output material 332 of the second stage back home, holes remain in the carrier output material 332 of the second stage back home. The remaining holes move to the energy accumulator 212 at the second stage of the return path. Holes and electrons are accumulated by forming a dipole in the energy accumulator 212 at the second stage of the return path.

The kinetic energy held by the electrons output from the carrier output material 332 of the second stage back to the impact is converted into thermal energy by impinging on the electron absorption collector 228 of the second stage. Therefore, the temperature of the electron absorption collector 228 of the 2nd stage rises, the heat which generate | occur | produces is conducted to the heat conductor 121 of the mode 2, and the temperature of the heat conductor 121 of the mode 2 increases. The heat of the heat conductor 121 of the mode 2 is conducted to the heat energy supply 126 to increase the temperature of the heat energy supply 126. The heat of the heat energy supply 126 that has become a high temperature is transferred to the insulator 8 so that the temperature of the insulator 8 rises. The heat of the insulator 8 is transferred to the carrier output material 131 of the first stage so that the temperature of the carrier output material 131 of the first stage is raised. In the initial state in which the field effect power generation device starts to operate, the temperature of the carrier output material 131 in the first stage is low, so that the amount of electrons emitted is small. However, as the emitted electrons collide, the temperature of the carrier output material 132 of the second stage is raised, and the amount of electrons emitted from it increases. The emitted electrons collide with the electron absorption collector 128 of the second stage, and the temperature rises. The generated heat is conducted via the thermal conductor 120 in mode 1, the temperature of the carrier output material 331 in the first stage of the return rises, the amount of electrons emitted therefrom increases, and the emitted electrons are removed. By impinging on the first stage electron absorption collector, the temperature of the carrier output material 332 of the second stage to the return rises, and the amount of electrons emitted therefrom increases. The emitted electrons collide with the second electron absorption collector 228, and the temperature rises. The heat of the second electron absorption collector 228 is conducted to the heat energy supply 126 via the heat conductor 121 of the mode 2 so that the temperature rises, and the emission amount of electrons increases. By repeating the above cycle, as time elapses, the temperature of the member that emits electrons increases, and the number of electrons emitted increases, so that the amount of power generated increases and the power generation efficiency also improves. When the electrical load 5 is connected to the energy accumulator 111 of the first stage in parallel, the electrical energy accumulated by the current flows in the electrical load 5 is consumed. When the electrical load 5 is connected in parallel to the energy accumulator 112 of the 2nd stage, the electrical energy accumulated by electric current flows in the electrical load 5 is consumed. When the electrical load 5 is connected in parallel to the energy accumulator 211 at the first stage of the return path, electric current accumulated by the current flows in the electrical load 5 is consumed. When the electrical load 5 is connected in parallel to the energy accumulator 212 of the 2nd stage of return, electrical energy accumulated by electric current flows in the electrical load 5 is consumed. Directly connects the energy accumulator 111 of the first stage, the energy accumulator 112 of the second stage, the energy accumulator 211 of the first stage of returning home and the energy accumulator 212 of the second stage of returning home directly. If electrical loads 5 are connected in parallel at both ends, electrical energy is consumed. When the multi-stage energy accumulator is connected in series, the terminal voltage is increased, the electrical energy consumed is higher than that of the individual discharge, and the power generation efficiency is further improved.

Fig. 56 is a side cross-sectional view of an embodiment of a two-stage cascade-feedback system using a thermal conductivity of a field effect generator. The role of the electron absorption collector 128 of the second stage used in FIG. 50 is also combined with the heat conductor 120 of mode 1 in FIG. 56. In addition, the role of the heat energy supplier 226 used in FIG. 50 is also combined with the heat conductor 120 of mode 1 in FIG. The role of the electron absorption collector 228 of the second stage used in FIG. 50 is also combined with the heat conductor 121 of mode 2 in FIG. 56. The role of the heat energy supplier 126 used in FIG. 50 is also used by the heat conductor 121 of mode 2 in FIG. As the thermal conductor 120 of the mode 1 and the thermal conductor 121 of the mode 2 of FIG. 56, materials having a good thermal conductivity are preferable. Graphene is an example of a material of the thermal conductor 120 in mode 1. Graphene is also an example of a material of the heat conductor 121 in mode 2. In graphene, the six-membered ring of carbon is arranged in a substantially planar and layered manner. The thermal conductivity in the layer is high, and there is little heat conducting between the layers. Therefore, when electrons emitted in a vacuum collide with and absorb the layer on the surface of the graphene, the temperature of the surface layer is increased. The heat conducts well in the layer of the surface, thus improving the efficiency of emitting electrons from the hot emitter in the next mode. Since heat accumulated in the layer on the surface of the graphene has low efficiency of conducting to the inner layer, the loss of thermal energy is low, and the thermal energy is preserved, so that the efficiency of electron emission in the next mode is improved. Therefore, when graphene is used as a specific material constituting the electron absorption collector 26, the mode 1 thermal conductor 120, and the mode 2 thermal conductor 121, it is possible to improve the power generation efficiency of the field effect generator.

[Third Embodiment of the Invention]

Fig. 57 is a sectional view when the three-step cascade system is adopted in the field effect generator according to the third embodiment of the present invention. In this figure, the negative voltage terminal of the first power source 31 is electrically connected to the carrier output material 131 of the first stage, and the positive voltage terminal of the first power source 31 is the first electrode 61 of the carrier accelerator. Is electrically connected). A first power source 31 is used to inject electrons that are carriers from the carrier input and output material 1 into the channel forming material 2. The negative voltage terminal of the second power supply 32 is electrically connected to the first electrode 61 of the carrier accelerator, and the positive voltage terminal of the second power source 32 is electrically connected to the second electrode 62 of the carrier accelerator. Is connected. The negative voltage terminal of the third power source 33 is electrically connected to the second electrode 62 of the carrier accelerator, and the positive voltage terminal of the third power source 33 is electrically connected to the third electrode 63 of the carrier accelerator. Is connected. The negative voltage terminal of the fourth power source 34 is electrically connected to the carrier output material 132 of the second stage, and the positive voltage terminal of the fourth power source 34 is electrically connected to the fourth electrode 64 of the carrier accelerator. Is connected. The negative voltage terminal of the fifth power source 35 is electrically connected to the fourth electrode 64 of the carrier accelerator, and the positive voltage terminal of the fifth power source 35 is electrically connected to the fifth electrode 65 of the carrier accelerator. Is connected. The negative voltage terminal of the sixth power source 36 is electrically connected to the fifth electrode 65 of the carrier accelerator, and the positive voltage terminal of the sixth power source 36 is electrically connected to the sixth electrode 66 of the carrier accelerator. Is connected. The negative voltage terminal of the seventh power supply 37 is electrically connected to the carrier output material 133 of the third stage, and the positive voltage terminal of the seventh power supply 37 is electrically connected to the seventh electrode 67 of the carrier accelerator. Is connected. The negative voltage terminal of the eighth power source 38 is electrically connected to the seventh electrode 67 of the carrier accelerator, and the positive voltage terminal of the eighth power source 38 is electrically connected to the eighth electrode 68 of the carrier accelerator. Is connected. The negative voltage terminal of the ninth power source 39 is electrically connected to the eighth electrode 68 of the carrier accelerator, and the positive voltage terminal of the ninth power source 39 is electrically connected to the ninth electrode 69 of the carrier accelerator. Is connected.

The structure of the periphery of the carrier output material 131 of the first stage is the same as that shown in Fig. 52, and the channel forming material 2 is electrically coupled to the carrier output material 131 of the first stage. An electric field is generated between the first electrode 61 of the carrier accelerator to which the positive voltage is applied and the carrier output material 131 of the first stage to which the negative voltage is applied, and the carrier output material of the first stage From 131 electrons as carriers are injected into the channel forming material 2. The first electrode 61 of the carrier accelerator acts as an injection electrode. Electrons injected into the channel forming material 2 are emitted to the acceleration channel 9 via the irreversible process generator 4. The first electrode 61 of the carrier accelerator also acts as an emission electrode. Emitted electrons are accelerated in the acceleration channel 9 by the first electrode 61 of the carrier accelerator, the second electrode 62 of the carrier accelerator and the third electrode 63 of the carrier accelerator. The second electrode 62 of the carrier accelerator and the third electrode 63 of the carrier accelerator serve as acceleration electrodes. The accelerated electrons collide with and are absorbed by the electron absorption collector 127 of the first stage. Electrons absorbed by the electron absorption collector 127 in the first stage move to the energy accumulator 111 in the first stage. Since electrons are emitted from the carrier output material 131 of the first stage, holes remain in the carrier output material 131 of the first stage. The remaining holes move to the energy accumulator 111 of the first stage. In the energy accumulator 111 of the first stage, holes and electrons are accumulated by forming a dipole.

The kinetic energy held by the electrons emitted from the carrier output material 131 of the first stage is converted into thermal energy by colliding with the electron absorption collector 127 of the first stage. Therefore, the temperature of the electron absorption collector 127 in the first stage rises, and the generated heat is conducted to the insulator 8, so that the temperature of the insulator 8 increases. The heat of the insulator 8 is conducted to the carrier output material 132 of the second stage so that the temperature of the carrier output material 132 of the second stage rises. The kinetic energy of the electrons in the carrier output material 132 of the second stage which has become high becomes large. The structure of the periphery of the carrier output material 132 of the second stage is the same as that shown in Fig. 53, and the channel forming material 2 is electrically coupled to the carrier output material 132 of the second stage. An electric field is generated between the fourth electrode 64 of the carrier acceleration device to which the positive voltage is applied and the carrier output material 132 of the second stage to which the negative voltage is applied, and the carrier output material of the second stage by the electric field ( From 132 electrons as carriers are injected into the channel forming material 2. The fourth electrode 64 of the carrier accelerator acts as an injection electrode. The electrons injected into the channel forming material 2 by the action of the high temperature and the electric field are emitted to the acceleration channel 9 via the irreversible process generator 4. The fourth electrode 64 of the carrier accelerator also acts as an emission electrode. The emitted electrons are accelerated in the acceleration channel 9 by the fourth electrode 64 of the carrier accelerator, the fifth electrode 65 of the carrier accelerator and the sixth electrode 66 of the carrier accelerator. The fifth electrode 65 of the carrier accelerator and the sixth electrode 66 of the carrier accelerator serve as acceleration electrodes. The accelerated electrons collide with and are absorbed by the electron absorption collector 128 of the second stage. The electrons absorbed by the electron absorption collector 128 of the second stage move to the energy accumulator 112 of the second stage. Since electrons are emitted from the carrier output material 132 of the second stage, holes remain in the carrier output material 132 of the second stage. The remaining holes move to the energy accumulator 112 of the second stage. In the energy accumulator 112 of the second stage, holes and electrons are accumulated by forming a dipole. The kinetic energy retained by the electrons output from the carrier output material 132 of the second stage is converted into thermal energy by impinging on the electron absorption collector 128 of the second stage. Therefore, the temperature of the electron absorption collector 128 of the second stage rises, and the generated heat conducts to the insulator 8, so that the temperature of the insulator 8 rises. The heat of the insulator 8 is conducted to the carrier output material 133 of the third stage so that the temperature of the carrier output material 133 of the third stage increases. The kinetic energy of electrons in the carrier output material 133 of the third stage which has become high becomes large. The structure around the carrier output material 133 of the third stage is the same as that shown in Fig. 58, and the channel forming material 2 is electrically coupled to the carrier output material 133 of the third stage. An electric field is generated between the seventh electrode 67 of the carrier accelerator to which the positive voltage is applied and the carrier output material 133 of the third stage to which the negative voltage is applied, and the carrier output of the third stage of high temperature is generated by the electric field. Electrons as carriers from the material 133 are injected into the channel forming material 2. The seventh electrode 67 of the carrier accelerator acts as an injection electrode. The electrons injected into the channel forming material 2 by the action of the high temperature and the electric field are emitted to the acceleration channel 9 via the irreversible process generator 4. The seventh electrode 67 of the carrier accelerator also acts as an emission electrode. Emitted electrons are accelerated in the acceleration channel 9 by the seventh electrode 67 of the carrier accelerator, the eighth electrode 68 of the carrier accelerator and the ninth electrode 69 of the carrier accelerator. The eighth electrode 68 of the carrier accelerator and the ninth electrode 69 of the carrier accelerator serve as acceleration electrodes. The accelerated electrons collide with and are absorbed by the electron absorption collector 129 of the third stage. Electrons absorbed by the electron absorption collector 129 of the third stage move to the energy accumulator 113 of the third stage. Since electrons are emitted from the carrier output material 133 of the third stage, holes remain in the carrier output material 133 of the third stage. The remaining holes move to the energy accumulator 113 of the third stage. In the energy accumulator 113 of the third stage, holes and electrons are accumulated by forming a dipole. When the electrical load 5 is connected to the energy accumulator 111 of the first stage in parallel, the electrical energy accumulated by the current flows in the electrical load 5 is consumed. When the electrical load 5 is connected to the energy accumulator 112 of the 2nd stage in parallel, the electric energy accumulated by electric current flows in the electrical load 5 is consumed. When the electrical load 5 is connected to the energy accumulator 113 of the 3rd stage in parallel, the electrical energy accumulated by the electric current flows in the electrical load 5 is consumed.

If the energy accumulator 111 of the 1st stage, the energy accumulator 112 of the 2nd stage, and the energy accumulator 113 of the 3rd stage are connected in series, and the electrical load 5 is connected in parallel to the both ends, Electric energy is consumed. When the multi-stage energy accumulator is connected in series, the terminal voltage is increased, the electrical energy consumed is higher than that emitted separately, and the power generation efficiency is improved.

In FIG. 57, when the thermal energy is supplied to the thermal energy supply 126, the temperature of the carrier output material 131 in the first stage is increased by thermal conduction, so the number of electrons emitted from the carrier output material 131 in the first stage is increased. More and the amount of electricity generated in subsequent stages increases. Therefore, in the case of supplying heat energy to the heat energy supplier 126 by the heater heating, the electric energy generated is larger than the electric energy consumed for the heater heating, so that the power generation efficiency is improved overall. In addition, it is possible to improve the power generation efficiency even if any kind of energy is supplied to the thermal energy supplier 126 as long as it is energy. Therefore, although the energy supplied to the thermal energy supply 126 is not limited in the present invention, examples of the energy to be supplied include electromagnetic wave energy and thermal energy. The thermal energy includes geothermal heat, solar heat, and heat generated from burning fossil fuels.

[Fourth embodiment of the present invention]

59 is a sectional view of an example of a field effect power generation device according to a fourth embodiment of the present invention. In the display of this figure, although two descriptions are implemented up and down for the 1st power supply 31 etc., it is actually one. That is, since this power generation apparatus is cylindrical, it is symmetrical on a horizontal axis, and describes the same thing up and down as a display. In this figure, the positive voltage terminal of the first power source 31 is electrically connected to the first electrode 61 of the carrier accelerator. The negative voltage terminal of the first power source 31 is electrically connected to the carrier output material 1. A first power source 31 is used to inject electrons that are carriers from the carrier output material 1 into the channel forming material 2. The negative voltage terminal of the second power supply 32 is electrically connected to the first electrode 61 of the carrier accelerator, and the positive voltage terminal of the second power source 32 is electrically connected to the second electrode 62 of the carrier accelerator. Is connected. The negative voltage terminal of the third power source 33 is electrically connected to the second electrode 62 of the carrier accelerator, and the positive voltage terminal of the third power source 33 is electrically connected to the third electrode 63 of the carrier accelerator. Is connected. The negative voltage terminal of the fourth power source 34 is electrically connected to the third electrode 63 of the carrier accelerator, and the positive voltage terminal of the fourth power source 34 is electrically connected to the fourth electrode 64 of the carrier accelerator. Is connected.

The periphery of the carrier output material 1 is enlarged and shown in FIG. An electric field is generated between the first electrode 61 of the carrier acceleration device to which the positive voltage is applied and the carrier output material 1 to which the negative voltage is applied, and electrons which are carriers from the carrier output material 1 by the action of the electric field. Is injected into the channel forming material 2. The first electrode 61 of the carrier accelerator acts as an injection electrode. During injection, the potential barrier between the carrier output material 1 and the channel forming material 2 is a quantum mechanical tunnel by an electric field generated between the first electrode 61 and the carrier output material 1 of the carrier accelerator. Based on the effect, electrons pass through. The first electrode 61 of the carrier accelerator also acts as a tunnel electrode. The injected electrons move in the acceleration channel 9. The radius of curvature of the tip of the channel forming material 2 is sufficiently small. Examples of the channel forming material 2 include carbon nanotubes and carbon walls. The carrier output material 1 and the channel forming material 2 are electrically connected. However, when the channel forming material 2 is a carbon-based material, it is necessary to apply a special bonding method to electrically connect the carrier output material 1 and the channel forming material 2. In the thermoelectric generator, since the carrier output material 1 is heated to a high temperature, it is very difficult to electrically connect the carrier output material 1 and the channel forming material 2 to a high temperature state. However, in the power generation apparatus of the present invention, since the carrier output material 1 does not need to be heated, when the carrier output material 1 and the channel forming material 2 are electrically connected, it is hard to destroy the connection. Power generation device is superior in durability than the prior art thermal power generation device.

Electrons injected into the channel forming material 2 are accelerated in the acceleration channel 9 by the electric field generated from the electrodes of the carrier accelerator, and the kinetic energy of the electrons is increased. The second electrode 62 of the carrier accelerator, the third electrode 63 of the carrier accelerator and the fourth electrode 64 of the carrier accelerator serve as the acceleration electrode. Electrons having a large kinetic energy arrive at the irreversible process generator 4 and are emitted from the channel forming material 2. The first electrode 61 of the carrier accelerator also acts as an emission electrode. In performing the emission, the potential barrier corresponding to the work function between the channel forming material 2 and the vacuum penetrates and breaks through the generated electric field based on the tunnel effect, and electrons are emitted in the vacuum.

Fig. 59 shows electric force lines generated from the electrodes of the carrier accelerator in a curve with arrows. Since the power generating device is cylindrical, electrons as carriers travel in the axial direction under the force of axial symmetry, collide with the electron absorption collector 26, and are absorbed therein. Electrons absorbed by the electron absorption collector 26 move to the energy accumulator 15. On the other hand, holes retaining a positive charge remain in the carrier output material 1 which outputs electrons as carriers. Holes move to the energy accumulator 15 where electrons and holes form a dipole. Electrons arriving at the electron absorption collector 26 move to the energy accumulator 15, and since there is almost no electrons remaining in the electron absorption collector 26, it subsequently obstructs the path of the electrons approaching the electron absorption collector 26. There is little to do. That is, since electrons and holes form a dipole in the energy accumulator 15, the negative charge retained by the electrons hardly affects the direction of movement of subsequent electrons. The hole also moves from the carrier output material 1 to the energy accumulator 15 where electrons and holes form a dipole, so that the positive charge held by the hole moves from the carrier output material 1 to the carrier input material. It is a feature of the power generating apparatus of the present invention that almost no interference is prevented and good power generation is carried out. In the preceding power generation device, electrons and holes remain in the raw material and obstruct the movement of subsequent carriers, which makes it difficult to realize high efficiency power generation.

[Fifth Embodiment of the Invention]

When electrical energy is generated by electrons being alternately emitted from emitters and collectors, this is called an alternate generation method. Fig. 61 is a sectional view of the state in mode 0 when the alternating power generation system is adopted in the field effect generator according to the fifth embodiment of the present invention. In mode 0, which is the initial state, the temperature of the electrode is low, so the electrons do not have sufficient kinetic energy. The case where the AC power supply 28 is connected to the electrodes on the A side and the B side, and the electrode is heated by the discharge phenomenon is called mode 0. FIG. 62 is a sectional view of the mode 1 state when the alternating power generation system is adopted in the field effect generator according to the fourth embodiment of the present invention. As shown in the figure, when the electrons are injected into the channel forming material 2 from the carrier output material 1 on the A side, and electrons are emitted from the channel forming material 2, this state is alternately generated. This is called mode 1. Fig. 63 is a sectional view of the state of mode 2 when the alternating power generation system is adopted in the field effect generator according to the fifth embodiment of the present invention. When electrons are injected into the channel forming material 2 from the carrier output material 1 on the B side, and electrons are emitted from the channel forming material 2, this state is called mode 2 of alternating power generation.

[Mode 0]

In the initial state, thermal energy is applied to the carrier output material 1 and the channel forming material 2 to heat the carrier output material 1 and the channel forming material 2. In the case of heating using a heater as the thermal energy, solar heat is applied, thermal energy from another power source, and the like. As a simple heating example, when the second electrode 62 of the carrier accelerator and the third electrode 63 of the carrier accelerator are set to a high impedance state, and a high voltage of AC is applied to the terminals A and B, the A side and the B side are applied. Discharge is started between the electrodes on the side, and the temperature of both electrodes rises. In FIG. 61, an AC power supply 28 is connected to the first electrode 61 of the carrier accelerator and the fourth electrode 64 of the carrier accelerator. Since no connection is made between the second electrode 62 of the carrier accelerator and the third electrode 63 of the carrier accelerator, these electrodes are in a high impedance state.

In the period in which the positive voltage is applied from the AC power supply 28 to the first electrode 61 of the carrier accelerator, a negative voltage is applied to the fourth electrode 64 of the carrier accelerator. In this period, when the voltage of the AC power supply 28 is sufficiently high, electrons are emitted from the fourth electrode 64 of the carrier accelerator, and the electrons collide with the first electrode 61 of the carrier accelerator. . Since the voltage applied to the electrode is sufficiently high, the temperature of the first electrode 61 of the carrier accelerator increases because the emitted electrons collide with the first electrode 61 of the carrier accelerator in a state of having a large kinetic energy. The thermal energy of the first electrode 61 of the carrier accelerator is transferred to the carrier output material 1 and the channel forming material 2 by the heat radiation effect, and electrons in the carrier output material 1 and the channel forming material 2 are transferred. High kinetic energy.

A positive voltage is applied to the fourth electrode 64 of the carrier accelerator in the period in which a negative voltage is applied from the AC power supply 28 to the first electrode 61 of the carrier accelerator. In this period, when the voltage of the AC power supply 28 is sufficiently high, electrons are emitted from the first electrode 61 of the carrier accelerator, and the electrons collide with the fourth electrode 64 of the carrier accelerator. . Since the voltage applied to the electrode is sufficiently high, the temperature of the fourth electrode 64 of the carrier accelerator increases because the emitted electrons collide with the fourth electrode 64 of the carrier accelerator with a large kinetic energy. The thermal energy of the fourth electrode 64 of the carrier accelerator device is transferred to the carrier output material 1 and the channel forming material 2 by the heat radiation effect, and electrons in the carrier output material 1 and the channel forming material 2 are transferred. High kinetic energy.

Since the AC power repeats the above process, the temperature of both the first electrode 61 of the carrier accelerator and the fourth electrode 64 of the carrier accelerator increases and becomes high temperature. The heat energy accumulated in the first electrode 61 of the carrier accelerator increases the temperature of the carrier output material 1 and the channel forming material 2 on the A side in FIG. 61 by the indirect heating effect. Therefore, the temperature in the carrier output material 1 rises, and the electrons therein hold a large kinetic energy, so injection is easy. The temperature in the channel forming material 2 also rises, and the electrons in the inside retain large kinetic energy, thus facilitating the emission. The heat energy accumulated in the fourth electrode 64 of the carrier accelerator increases in temperature of the carrier output material 1 and the channel forming material 2 on the B side in FIG. 61 due to the indirect heating effect. Therefore, the temperature in the carrier output material 1 rises, and the electrons in the inside retain large kinetic energy, so that injection is easy. The temperature in the channel forming material 2 rises, and the electrons in the interior retain large kinetic energy, which facilitates the emission of most electrons.

[Mode 1]

64 is an external view of the state of mode 1 when the alternating power generation system is adopted in the field effect generator according to the fifth embodiment of the present invention. In FIG. 62, the carrier output material 1 and the channel forming material 2 are enlarged and shown in FIG. As shown in FIG. 62, the negative voltage terminal of the first power source 31 is electrically connected to the carrier output material 1 on the A side, and the positive voltage terminal of the first power source 31 is the first of the carrier accelerator. It is electrically connected to the electrode 61. A first power source 31 is used to inject electrons that are carriers from the carrier output material 1 into the channel forming material 2. The negative voltage terminal of the second power supply 32 is electrically connected to the first electrode 61 of the carrier accelerator, and the positive voltage terminal of the second electrode 32 is electrically connected to the second electrode 62 of the carrier accelerator. Is connected. The negative voltage terminal of the third power source 33 is electrically connected to the second electrode 62 of the carrier accelerator, and the positive voltage terminal of the third power source 33 is electrically connected to the third electrode 63 of the carrier accelerator. Is connected.

As shown in FIG. 60, the channel forming material 2 is electrically coupled to the tip of the carrier output material 1. An electric field is generated between the carrier output material 1 and the first electrode 61 of the carrier accelerator, and electrons in the carrier output material 1 are injected into the channel forming material 2. The first electrode 61 of the carrier accelerator acts as an injection electrode. The tip of the channel forming material 2 is so thin that an electric field is concentrated at the tip. As shown in FIG. 60, electrons are emitted from the channel forming material 2 to the acceleration channel 9 via the irreversible process generating unit 4 by the electric field. The first electrode 61 of the carrier accelerator acts as an emission electrode. In the initial state, the temperature of the carrier output material 1 and the channel forming material 2 is low so that the number of electrons to be emitted is small, but when the critical state is reached, the electrons in the carrier output material 1 and the channel forming material 2 are reduced. Has a high kinetic energy, increases the number of electrons injected, and also increases the number of electrons that are emitted.

Electrons emitted in the acceleration channel 9 are positive charges accumulated in the first electrode 61 of the carrier accelerator and positive charges accumulated in the second electrode 62 of the carrier accelerator and the third electrode 63 of the carrier accelerator. Is accelerated by the Coulomb force acting between the positive charges accumulated in the), and finally reaches the fourth electrode 64 of the carrier accelerator. The second electrode 62 of the carrier accelerator, the third electrode 63 of the carrier accelerator and the fourth electrode 64 of the carrier accelerator serve as the acceleration electrode. In mode 1, the fourth electrode 64 of the carrier accelerator serves as the collector 4 which absorbs electrons. The charge accumulated in the fourth electrode 64 of the carrier accelerator moves to the energy accumulator 111 in the first stage via the switch 351. Holes remain in the carrier output material 1 on the A side injecting electrons, and the holes move to the energy accumulator 111 in the first stage, where holes and electrons are accumulated by forming a dipole. When the electrical load 5 is connected in parallel to the energy accumulator 111 of the first stage, the generated electrical energy is consumed. In the operation of mode 1, the electrons which are emitted from the channel forming material 2 on the A side are accelerated and collide with the fourth electrode 64 of the carrier accelerator so that the kinetic energy of the electrons is the fourth electrode 64 of the carrier accelerator. ), The temperature of the fourth electrode 64 of the carrier accelerator increases.

[Mode 2]

In FIG. 63, the carrier output material 1 and the channel forming material 2 are enlarged and shown in FIG. As shown in Fig. 62, the negative voltage terminal of the fifth power source 35 is electrically connected to the carrier output material 1 on the B side, and the positive voltage terminal of the fifth power source 35 is the fourth of the carrier accelerator. It is electrically connected to the electrode 64. A fifth power source 35 is used to inject electrons that are carriers from the carrier output material 1 into the channel forming material 2. The negative voltage terminal of the sixth power source 36 is electrically connected to the fourth electrode 64 of the carrier accelerator, and the positive voltage terminal of the sixth power source 36 is electrically connected to the third electrode 63 of the carrier accelerator. Is connected. The negative voltage terminal of the seventh power source 37 is electrically connected to the third electrode 63 of the carrier accelerator, and the positive voltage terminal of the seventh power source 37 is electrically connected to the second electrode 62 of the carrier accelerator. Is connected.

As shown in FIG. 60, the channel forming material 2 is electrically coupled to the leading end of the carrier output material 1. By operation of the mode 1, the temperature of the fourth electrode 64 of the carrier accelerator increases, and the B side becomes a high temperature. Since the fourth electrode 64 of the carrier accelerator is disposed in close proximity to the carrier output material 1 and the channel forming material 2 on the B side, the carrier output material 1 and the channel formation on the B side are formed by an indirect heating effect. The temperature of the material 2 becomes high by operation of mode 1, and the electrons inside them acquire high kinetic energy.

An electric field is generated between the carrier output material 1 and the fourth electrode 64 of the carrier accelerator, and since the kinetic energy of the electrons in the carrier output material 1 is large, electrons form a channel from the carrier output material 1. It is easily injected into the material 2. In this case, the fourth electrode 64 of the carrier accelerator acts as an injection electrode. Since the channel forming material 2 has a thin structure, an electric field concentrates at its tip. As shown in FIG. 60, since the temperature of the channel forming material 2 on the B side becomes high temperature by the operation of mode 1, electrons are irreversible process generating unit 4 from the channel forming material 2 due to the generated electric field. Is accelerated into the acceleration channel 9 via. The fourth electrode 64 of the carrier accelerator acts as an emission electrode. In the initial state, the temperature of the carrier output material 1 and the channel forming material 2 is low, so the number of electrons to be emitted is small.

Electrons emitted in the acceleration channel 9 are positively charged at the fourth electrode 64 of the carrier accelerator and positively charged at the third electrode 63 of the carrier accelerator and the second electrode 62 of the carrier accelerator. Is accelerated by the Coulomb force acting between the positive charges accumulated in the), and reaches the first electrode 61 of the carrier accelerator. The fourth electrode 64 of the carrier accelerator, the third electrode 63 of the carrier accelerator and the second electrode 62 of the carrier accelerator serve as acceleration electrodes. In mode 2, the first electrode 61 of the carrier accelerator acts as a collector 4 that absorbs electrons. Electrons accumulated in the first electrode 61 of the carrier accelerator move to the energy accumulator 112 in the second stage via the switch 350. Holes remain in the carrier output material 1 on the B side injecting electrons, and the holes move to the energy accumulator 112 in the second stage, where holes and electrons are accumulated by forming a dipole. When the electrical load 5 is connected in parallel to the energy accumulator 112 of the second stage, the generated electrical energy is consumed.

In operation of the mode 2, the electrons that are emitted from the channel forming material 2 on the B side are accelerated to impinge on the first electrode 61 of the carrier accelerator, so that the kinetic energy of the electrons is first electrode 61 of the carrier accelerator. By being absorbed into, the temperature of the first electrode 61 of the carrier accelerator increases. Since the first electrode 61 of the carrier accelerator is disposed in close proximity to the carrier output material 1 and the channel forming material 2, the temperature of the carrier output material 1 and the channel forming material 2 by the indirect heating effect. Becomes high temperature by the operation of mode 2, and the electrons inside them acquire high kinetic energy.

By repeating Mode 1 and Mode 2, the temperatures of the carrier output material 1 and the channel forming material 2 on the A side and B side rise, and electrons injected therein retain the most kinetic energy. And the number of electrons that are emitted is increased. By repeating the above-described mode 1 and mode 2 in turn, the carrier output material 1 and the channel forming material 2 on the A side and the B side become high temperature, and electrical energy whose polarity is changed is obtained efficiently, and the electrical load A large current flows by applying a voltage generated at. Therefore, it is possible to supply electrical energy to the electrical load 5 efficiently by the said power generation.

In the alternating power generation, thermal energy is supplied to give high kinetic energy to the electrons in the carrier output material 1 and the channel forming material 2. As another method of improving the power generation efficiency, it is also possible to reach the critical state of power generation by irradiating electromagnetic waves with a short wavelength to the carrier input material. In the mode 1, electrons collide with the fourth electrode 64 of the carrier accelerator. However, since the damage of the material is less likely to change the colliding place, the emergency trajectory of the electrons changes in time. For this purpose, it is preferable from the viewpoint of durability that the voltage applied to the electrode 60 of the carrier accelerator changes and the collision point of the electrons is sequentially changed by the deflection action.

In the mode 2, electrons collide with the first electrode 61 of the carrier accelerator. However, since the damage of the material is less likely to change the colliding place, the emergency trajectory of the electrons changes in time. For this purpose, it is preferable from the viewpoint of durability that the voltage applied to the electrode 60 of the carrier accelerator changes, and the collision point changes sequentially by the deflection action.

[Sixth Embodiment of the Invention]

65 shows a cross section in the case where an N-type semiconductor is used as a carrier output material and a P-type semiconductor is used as a channel formation material in the field effect power generation device according to the sixth embodiment of the present invention. In the figure, the P-type semiconductor 10 and the N-type semiconductor 11 form a PN junction. An insulator 8 is disposed around the PN junction. First power source 31, second power source 32, third power source 33, fourth power source 34, fifth power source 35, sixth power source 36, and seventh power source to accelerate the carrier. (37), the eighth power source 38, the ninth power source 39, and the tenth power source 40 are used. The first power source 31 is used to inject electrons serving as carriers from the N-type semiconductor 11 to the P-type semiconductor 10. The negative voltage terminal of the first power source 31 is electrically connected to the N-type semiconductor 11. The positive voltage terminal of the first power source 31 is electrically connected to the first electrode 61 of the carrier accelerator. An electric field is generated between the first electrode 61 of the carrier accelerator and the N-type semiconductor 11, and the electric line of force is directed from the first electrode 61 of the carrier accelerator to the N-type semiconductor 11. By this electric field effect, electrons which are majority carriers of the N-type semiconductor 11 are injected from the N-type semiconductor 11 into the P-type semiconductor 10. The first electrode 61 of the carrier accelerator acts as an injection electrode. Electrons injected into the P-type semiconductor 10 are attracted to the first electrode 61 of the carrier accelerator, and reach directly below the first electrode 61 of the carrier accelerator, thereby forming an image of the P-type semiconductor 10. An inversion layer is formed on the surface. The inversion layer becomes the acceleration channel 9. The negative voltage terminal of the second power supply 32 is electrically connected to the first electrode 61 of the carrier accelerator. The positive voltage terminal of the second power supply 32 is electrically connected to the second electrode 62 of the carrier accelerator. An electric field generated between the second electrode 62 of the carrier accelerator and the first electrode 61 of the carrier accelerator accelerates electrons injected into the P-type semiconductor 10 in the acceleration channel 9. The negative voltage terminal of the third power source 33 is electrically connected to the second electrode 62 of the carrier accelerator. The positive voltage terminal of the third power source 33 is electrically connected to the third electrode 63 of the carrier accelerator. An electric field generated between the third electrode 63 of the carrier accelerator and the second electrode 62 of the carrier accelerator accelerates electrons in the acceleration channel 9 on the upper surface of the P-type semiconductor 10. The second electrode 62 of the carrier accelerator and the third electrode 63 of the carrier accelerator serve as sliding electrodes. The negative voltage terminal of the fourth power source 34 is electrically connected to the third electrode 63 of the carrier accelerator. The positive voltage terminal of the fourth power source 34 is electrically connected to the fourth electrode 64 of the carrier accelerator. An electric field generated between the fourth electrode 64 of the carrier accelerator and the third electrode 63 of the carrier accelerator accelerates electrons in the acceleration channel 9 on the brand surface of the P-type semiconductor 10. Accelerated electrons in the brand face of the P-type semiconductor 10 possess sufficient kinetic energy, reach the disadvantages of the brand face of the P-type semiconductor, and electrons are emitted into the space. The fourth electrode 64 of the carrier accelerator acts as an emission electrode. The negative voltage terminal of the fifth power source 35 is electrically connected to the fourth electrode 64 of the carrier accelerator. The positive voltage terminal of the fifth power source 35 is electrically connected to the fifth electrode 65 of the carrier accelerator. An electric field generated between the fifth electrode 65 of the carrier accelerator and the fourth electrode 64 of the carrier accelerator accelerates the emitted electrons in the acceleration channel 9. The fifth electrode 65 of the carrier accelerator acts as an accelerator electrode. The accelerated electrons sufficiently retain the kinetic energy, overcome the repulsive force from the negative charge accumulated in the electron absorption collector 26, and finally are absorbed by the electron absorption collector 26.

The negative voltage terminal of the sixth power source 36 is electrically connected to the N-type semiconductor 11. The positive voltage terminal of the sixth power source 36 is electrically connected to the sixth electrode 66 of the carrier accelerator. An electric field is generated between the sixth electrode 66 of the carrier accelerator and the N-type semiconductor 11, and the electric line of force is directed from the sixth electrode 66 of the carrier accelerator to the N-type semiconductor 11. By this electric field, electrons which are the majority carriers of the N-type semiconductor 11 are injected from the N-type semiconductor 11 to the lower surface of the P-type semiconductor 10. The sixth electrode 66 of the carrier accelerator acts as an injection electrode. Electrons injected into the lower surface of the P-type semiconductor 10 are attracted to the sixth electrode 66 of the carrier accelerator, reach directly under the sixth electrode 66 of the carrier accelerator, An inversion layer is formed on the bottom surface of 10). The inversion layer becomes the acceleration channel 9. The negative voltage terminal of the seventh power source 37 is electrically connected to the sixth electrode 66 of the carrier accelerator. The positive voltage terminal of the seventh power source 37 is electrically connected to the seventh electrode 67 of the carrier accelerator. An electric field generated between the seventh electrode 67 of the carrier accelerator and the sixth electrode 66 of the carrier accelerator accelerates electrons injected into the lower surface of the P-type semiconductor 10. The negative voltage terminal of the eighth power supply 38 is electrically connected to the seventh electrode 67 of the carrier accelerator. The positive voltage terminal of the eighth power supply 38 is electrically connected to the eighth electrode 68 of the carrier accelerator. An electric field generated between the eighth electrode 68 of the carrier accelerator and the seventh electrode 67 of the carrier accelerator accelerates electrons in the acceleration channel 9 on the lower surface of the P-type semiconductor 10. The seventh electrode 67 of the carrier accelerator and the eighth electrode 68 of the carrier accelerator serve as sliding electrodes. The negative voltage terminal of the ninth power source 39 is electrically connected to the eighth electrode 68 of the carrier accelerator. The positive voltage terminal of the ninth power source 39 is electrically connected to the ninth electrode 69 of the carrier accelerator. An electric field generated between the ninth electrode 69 of the carrier accelerator and the eighth electrode 68 of the carrier accelerator accelerates electrons in the acceleration channel 9 on the lower surface of the P-type semiconductor 10. The electrons accelerated at the lower surface of the P-type semiconductor 10 have sufficient kinetic energy, reach the disadvantage of the lower surface of the P-type semiconductor, and electrons are emitted in space. The ninth electrode 69 of the carrier accelerator acts as an emission electrode. The negative voltage terminal of the tenth power source 40 is electrically connected to the ninth electrode 69 of the carrier accelerator. The positive voltage terminal of the tenth power source 40 is electrically connected to the tenth electrode 70 of the carrier accelerator. An electric field generated between the tenth electrode 70 of the carrier accelerator and the ninth electrode 69 of the carrier accelerator accelerates the electrons that have been emitted. The tenth electrode 70 of the carrier acceleration device acts as an acceleration electrode. The accelerated electrons sufficiently retain the kinetic energy, overcome the repulsive force from the negative charge accumulated in the electron absorption collector 26, and finally are absorbed by the electron absorption collector 26.

The electrons accelerated at the label surface and the lower surface of the P-type semiconductor 10 have sufficient kinetic energy, reach the disadvantages of the label surface and the lower surface of the P-type semiconductor, and repel each other at the disadvantages of both. It is well-emitted. The N-type semiconductor 11 is electrically connected to the positive voltage terminal of the energy accumulator 15, and the electron absorption collector 26 is electrically connected to the negative voltage terminal of the energy accumulator 15. Holes injected from the P-type semiconductor 10 into the N-type semiconductor 11 move to the positive voltage terminal of the energy accumulator 15, and the electrons accumulated in the electron absorption collector 26 are stored in the energy accumulator 15. Move to negative voltage terminal of. The holes accumulated in the positive electrode of the energy accumulator 15 and the electrons accumulated in the negative electrode of the energy accumulator 15 are in the approaching positions and are attracted to each other based on Coulomb's law. One terminal of the electrical load 5 is connected to the positive electrode of the energy accumulator 15, and the other terminal of the electrical load 5 is connected to the negative electrode of the energy accumulator 15. Both holes and electrons accumulated in the energy accumulator 15 supply electrical energy to the electrical load 5 by recombination at the electrical load 5.

[Seventh Embodiment of the Invention]

66 shows a cross section in the case where an N-type semiconductor is used as a carrier output material and a P-type semiconductor is used as a channel forming material in the field effect power generation device according to the seventh embodiment of the present invention. In the figure, the P-type semiconductor 10 and the N-type semiconductor 11 form a PN junction. An insulator 8 is disposed around the PN junction. First power source 31, second power source 32, third power source 33, fourth power source 34, fifth power source 35, sixth power source 36, and seventh power source to accelerate the carrier. (37), the eighth power source 38, the ninth power source 39, and the tenth power source 40 are used. The first power source 31 is used to inject electrons serving as carriers from the N-type semiconductor 11 to the P-type semiconductor 10. The negative voltage terminal of the first power source 31 is electrically connected to the N-type semiconductor 11. The positive voltage terminal of the first power source 31 is electrically connected to the first electrode 61 of the carrier accelerator. An electric field is generated between the first electrode 61 of the carrier accelerator and the N-type semiconductor 11, and the electric line of force is directed from the first electrode 61 of the carrier accelerator to the N-type semiconductor 11. By this electric field, electrons which are majority carriers of the N-type semiconductor 11 are injected from the N-type semiconductor 11 into the P-type semiconductor 10. The first electrode 61 of the carrier accelerator acts as an injection electrode. Electrons injected into the P-type semiconductor 10 are attracted to the first electrode 61 of the carrier accelerator, reach directly below the first electrode 61 of the carrier accelerator, An inversion layer is formed on the trademark surface. The inversion layer becomes the acceleration channel 9, where the carrier moves. The negative voltage terminal of the second power supply 32 is electrically connected to the first electrode 61 of the carrier accelerator. The positive voltage terminal of the second power supply 32 is electrically connected to the second electrode 62 of the carrier accelerator. An electric field generated between the second electrode 62 of the carrier accelerator and the first electrode 61 of the carrier accelerator accelerates electrons injected into the P-type semiconductor 10. The negative voltage terminal of the third power source 33 is electrically connected to the second electrode 62 of the carrier accelerator. The positive voltage terminal of the third power source 33 is electrically connected to the third electrode 63 of the carrier accelerator. An electric field generated between the third electrode 63 of the carrier accelerator and the second electrode 62 of the carrier accelerator accelerates electrons on the brand surface of the P-type semiconductor 10, and electrons in the acceleration channel 9. To move. The negative voltage terminal of the fourth power source 34 is electrically connected to the third electrode 63 of the carrier accelerator. The positive voltage terminal of the fourth power source 34 is electrically connected to the fourth electrode 64 of the carrier accelerator. An electric field generated between the fourth electrode 64 of the carrier accelerator and the third electrode 63 of the carrier accelerator accelerates electrons in the acceleration channel 9 on the brand surface of the P-type semiconductor 10. The second electrode 62 of the carrier accelerator and the third electrode 63 of the carrier accelerator serve as sliding electrodes. The electrons accelerated in the acceleration channel 9 on the branded surface of the P-type semiconductor 10 have sufficient kinetic energy, reach the disadvantage of the branded surface of the P-type semiconductor, and electrons are emitted into the space. The fourth electrode 64 of the carrier accelerator acts as an emission electrode. When the emission is performed, the end surface of the P-type semiconductor is inclined, and the radius of curvature of the disadvantage of the trademark surface is small, so that the electron emission is performed well.

The negative voltage terminal of the fifth power source 35 is electrically connected to the fourth electrode 64 of the carrier accelerator. The positive voltage terminal of the fifth power source 35 is electrically connected to the fifth electrode 65 of the carrier accelerator. The electric field generated between the fifth electrode 65 of the carrier accelerator and the fourth electrode 64 of the carrier accelerator accelerates the electrons that have been emitted in the acceleration channel 9. The fifth electrode 65 of the carrier accelerator acts as an accelerator electrode. The accelerated electrons sufficiently retain kinetic energy, overcome the repulsive force from the negative charge accumulated in the electron absorption collector 26, and are finally absorbed by the electron absorption collector 26.

The negative voltage terminal of the sixth power source 36 is electrically connected to the N-type semiconductor 11. The positive voltage terminal of the sixth power source 36 is electrically connected to the sixth electrode 66 of the carrier accelerator. An electric field is generated between the sixth electrode 66 of the carrier accelerator and the N-type semiconductor 11, and the electric line of force is directed from the sixth electrode 66 of the carrier accelerator to the N-type semiconductor 11. By this electric field, electrons which are the majority carriers of the N-type semiconductor 11 are injected from the N-type semiconductor 11 to the lower surface of the P-type semiconductor 10. The sixth electrode 66 of the carrier accelerator acts as an injection electrode. Electrons injected into the lower surface of the P-type semiconductor 10 are attracted to the sixth electrode 66 of the carrier accelerator, reach directly under the sixth electrode 66 of the carrier accelerator, An inversion layer is formed on the bottom surface of 10). The inversion layer becomes the acceleration channel 9, where electrons move. The negative voltage terminal of the seventh power source 37 is electrically connected to the sixth electrode 66 of the carrier accelerator. The positive voltage terminal of the seventh power source 37 is electrically connected to the seventh electrode 67 of the carrier accelerator. An electric field generated between the seventh electrode 67 of the carrier accelerator and the sixth electrode 66 of the carrier accelerator causes electrons injected into the lower surface of the P-type semiconductor 10 in the acceleration channel 9. Accelerate The negative voltage terminal of the eighth power supply 38 is electrically connected to the seventh electrode 67 of the carrier accelerator. The positive voltage terminal of the eighth power supply 38 is electrically connected to the eighth electrode 68 of the carrier accelerator. An electric field generated between the eighth electrode 68 of the carrier accelerator and the seventh electrode 67 of the carrier accelerator accelerates electrons on the lower surface of the P-type semiconductor 10. The seventh electrode 67 of the carrier accelerator and the eighth electrode 68 of the carrier accelerator serve as sliding electrodes. The negative voltage terminal of the ninth power source 39 is electrically connected to the eighth electrode 68 of the carrier accelerator. The positive voltage terminal of the ninth power source 39 is electrically connected to the ninth electrode 69 of the carrier accelerator. An electric field generated between the ninth electrode 69 of the carrier accelerator and the eighth electrode 68 of the carrier accelerator accelerates electrons on the lower surface of the P-type semiconductor 10. The electrons accelerated in the acceleration channel 9 of the lower surface of the P-type semiconductor 10 have sufficient kinetic energy, reach the disadvantage of the lower surface of the P-type semiconductor, and electrons are radiated into the space. The ninth electrode 69 of the carrier accelerator acts as an emission electrode. When performing the emission, the end surface of the P-type semiconductor is inclined, and the radius of curvature at the disadvantage of the lower surface is small, so that the electron emission is performed well.

The negative voltage terminal of the tenth power source 40 is electrically connected to the ninth electrode 69 of the carrier accelerator. The positive voltage terminal of the tenth power source 40 is electrically connected to the tenth electrode 70 of the carrier accelerator. An electric field generated between the tenth electrode 70 of the carrier accelerator and the ninth electrode 69 of the carrier accelerator accelerates the emitted electrons in the acceleration channel 9. The tenth electrode 70 of the carrier acceleration device acts as an acceleration electrode. The accelerated electrons sufficiently retain kinetic energy, overcome the repulsive force from the negative charge accumulated in the electron absorption collector 26, and are finally absorbed by the electron absorption collector 26.

The N-type semiconductor 11 is electrically connected to the positive voltage terminal of the energy accumulator 15, and the electron absorption collector 26 is electrically connected to the negative voltage terminal of the energy accumulator 15. Holes injected from the P-type semiconductor 10 into the N-type semiconductor 11 move to the positive voltage terminal of the energy accumulator 15, and the electrons accumulated in the electron absorption collector 26 are stored in the energy accumulator 15. Move to negative voltage terminal of. Holes accumulated in the positive voltage terminal of the energy accumulator 15 and electrons accumulated in the negative voltage terminal of the energy accumulator 15 are in the approaching position and are attracted to each other based on Coulomb's law. One terminal of the electrical load 5 is connected to the positive voltage terminal of the energy accumulator 15, and the other terminal of the electrical load 5 is connected to the negative voltage terminal of the energy accumulator 15. Both holes and electrons accumulated in the energy accumulator 15 supply electrical energy to the electrical load 5 by recombination at the electrical load 5.

[Eighth embodiment of the present invention]

The cross section at the time of using an N type semiconductor as a carrier output material and a P type semiconductor as a channel formation material in the field effect power generation device which concerns on 8th Embodiment of this invention is shown in FIG. In the figure, the P-type semiconductor 10 and the N-type semiconductor 11 form a PN junction. An insulator 8 is disposed around the PN junction. First power source 31, second power source 32, third power source 33, fourth power source 34, fifth power source 35, sixth power source 36, and seventh power source to accelerate the carrier (37), an eighth power source 38, a ninth power source 39, and a tenth power source 40 are used. The first power source 31 and the sixth power source 36 are used to inject electrons serving as carriers from the N-type semiconductor 11 to the P-type semiconductor 10. The negative voltage terminal of the first power source 31 is electrically connected to the N-type semiconductor 11. The positive voltage terminal of the first power source 31 is electrically connected to the first electrode 61 of the carrier accelerator. An electric field is generated between the first electrode 61 of the carrier accelerator and the N-type semiconductor 11, and the electric line of force is directed from the first electrode 61 of the carrier accelerator to the N-type semiconductor 11. By this electric field, electrons which are majority carriers of the N-type semiconductor 11 are injected from the N-type semiconductor 11 into the P-type semiconductor 10. The first electrode 61 of the carrier accelerator acts as an injection electrode. Electrons injected into the P-type semiconductor 10 are attracted to the first electrode 61 of the carrier accelerator, reach directly below the first electrode 61 of the carrier accelerator, An inversion layer is formed on the trademark surface. The inversion layer becomes the acceleration channel 9. The negative voltage terminal of the second power supply 32 is electrically connected to the first electrode 61 of the carrier accelerator. The positive voltage terminal of the second power supply 32 is electrically connected to the second electrode 62 of the carrier accelerator. An electric field generated between the second electrode 62 of the carrier accelerator and the first electrode 61 of the carrier accelerator accelerates electrons injected into the P-type semiconductor 10 in the acceleration channel 9. The negative voltage terminal of the third power source 33 is electrically connected to the second electrode 62 of the carrier accelerator. The positive voltage terminal of the third power source 33 is electrically connected to the third electrode 63 of the carrier accelerator. An electric field generated between the third electrode 63 of the carrier accelerator and the second electrode 62 of the carrier accelerator accelerates electrons in the acceleration channel 9 on the brand surface of the P-type semiconductor 10. The second electrode 62 of the carrier accelerator and the third electrode 63 of the carrier accelerator serve as sliding electrodes. The negative voltage terminal of the fourth power source 34 is electrically connected to the third electrode 63 of the carrier accelerator. The positive voltage terminal of the fourth power source 34 is electrically connected to the fourth electrode 64 of the carrier accelerator. An electric field generated between the fourth electrode 64 of the carrier accelerator and the third electrode 63 of the carrier accelerator accelerates electrons on the surface of the P-type semiconductor 10. The accelerated electrons in terms of the brand of the P-type semiconductor 10 have sufficient kinetic energy, reach the disadvantages of the P-type semiconductor, and electrons are emitted into the space. The fourth electrode 64 of the carrier accelerator acts as an emission electrode. The negative voltage terminal of the fifth power source 35 is electrically connected to the fourth electrode 64 of the carrier accelerator. The positive voltage terminal of the fifth power source 35 is electrically connected to the fifth electrode 65 of the carrier accelerator. An electric field generated between the fifth electrode 65 of the carrier accelerator and the fourth electrode 64 of the carrier accelerator accelerates the emitted electrons in the acceleration channel 9. The fifth electrode 65 of the carrier accelerator acts as an accelerator electrode. The accelerated electrons sufficiently retain the kinetic energy, overcome the repulsive force from the negative charge accumulated in the electron absorption collector 26, and finally are absorbed by the electron absorption collector 26.

The negative voltage terminal of the sixth power source 36 is electrically connected to the N-type semiconductor 11. The positive voltage terminal of the sixth power source 36 is electrically connected to the sixth electrode 66 of the carrier accelerator. An electric field is generated between the sixth electrode 66 of the carrier accelerator and the N-type semiconductor 11, and the electric line of force is directed from the sixth electrode 66 of the carrier accelerator to the N-type semiconductor 11. By this electric field, electrons which are the majority carriers of the N-type semiconductor 11 are injected from the N-type semiconductor 11 to the lower surface of the P-type semiconductor 10. The sixth electrode 66 of the carrier accelerator acts as an injection electrode. Electrons injected into the lower surface of the P-type semiconductor 10 are attracted to the sixth electrode 66 of the carrier accelerator, reach directly under the sixth electrode 66 of the carrier accelerator, An inversion layer is formed on the bottom surface of 10). This inversion layer becomes the acceleration channel 9. The negative voltage terminal of the seventh power source 37 is electrically connected to the sixth electrode 66 of the carrier accelerator. The positive voltage terminal of the seventh power source 37 is electrically connected to the seventh electrode 67 of the carrier accelerator. An electric field generated between the seventh electrode 67 of the carrier accelerator and the sixth electrode 66 of the carrier accelerator causes electrons injected into the lower surface of the P-type semiconductor 10 in the acceleration channel 9. Accelerate The negative voltage terminal of the eighth power supply 38 is electrically connected to the seventh electrode 67 of the carrier accelerator. The positive voltage terminal of the eighth power supply 38 is electrically connected to the eighth electrode 68 of the carrier accelerator. An electric field generated between the eighth electrode 68 of the carrier accelerator and the seventh electrode 67 of the carrier accelerator accelerates electrons in the acceleration channel 9 on the lower surface of the P-type semiconductor 10. The seventh electrode 67 of the carrier accelerator and the eighth electrode 68 of the carrier accelerator serve as acceleration electrodes. The negative voltage terminal of the ninth power source 39 is electrically connected to the eighth electrode 68 of the carrier accelerator. The positive voltage terminal of the ninth power source 39 is electrically connected to the ninth electrode 69 of the carrier accelerator. An electric field generated between the ninth electrode 69 of the carrier accelerator and the eighth electrode 68 of the carrier accelerator accelerates electrons on the lower surface of the P-type semiconductor 10. The electrons accelerated in the acceleration channel 9 at the lower surface of the P-type semiconductor 10 have sufficient kinetic energy, reach the disadvantage of the P-type semiconductor, and electrons are emitted in space. The ninth electrode 69 of the carrier accelerator acts as an emission electrode. The negative voltage terminal of the tenth power source 40 is electrically connected to the ninth electrode 69 of the carrier accelerator. The positive voltage terminal of the tenth power source 40 is electrically connected to the tenth electrode 70 of the carrier accelerator. An electric field generated between the tenth electrode 70 of the carrier accelerator and the ninth electrode 69 of the carrier accelerator accelerates the emitted electrons in the acceleration channel 9. The tenth electrode 70 of the carrier acceleration device acts as an acceleration electrode. The accelerated electrons sufficiently retain the kinetic energy, overcome the repulsive force from the negative charge accumulated in the electron absorption collector 26, and finally are absorbed by the electron absorption collector 26.

The N-type semiconductor 11 is electrically connected to the positive voltage terminal of the energy accumulator 15, and the electron absorption collector 26 is electrically connected to the negative voltage terminal of the energy accumulator 15. Holes injected from the P-type semiconductor 10 into the N-type semiconductor 11 move to the positive voltage terminal of the energy accumulator 15, and the electrons accumulated in the electron absorption collector 26 are stored in the energy accumulator 15. Move to negative voltage terminal of. The holes accumulated in the positive electrode of the energy accumulator 15 and the electrons accumulated in the negative electrode of the energy accumulator 15 are in the approaching position and are attracted to each other based on Coulomb's law. One terminal of the electrical load 5 is connected to the positive voltage terminal of the energy accumulator 15, and the other terminal of the electrical load 5 is connected to the negative voltage terminal of the energy accumulator 15. Both holes and electrons accumulated in the energy accumulator 15 supply electrical energy to the electrical load 5 by recombination at the electrical load 5.

[Ninth Embodiment of the Invention]

In the field effect generator according to the ninth embodiment of the present invention, an N-type semiconductor 11 is used as the carrier output material 1 and a P-type semiconductor 10 is used as the channel forming material 2. The cross section at the time of insulating is shown in FIG. The PN junction is formed using the P-type semiconductor 10 and the N-type semiconductor 11. An insulator 8 is arranged around the PN junction. Six power sources 30 are used to accelerate the carrier. As the six power sources 30, a first power source 31, a second power source 32, a third power source 33, a fourth power source 34, a fifth power source 35, and a sixth power source 36 are used. . The first power source 31 is used to inject electrons serving as carriers from the N-type semiconductor 11 to the P-type semiconductor 10. The positive electrode 41 of the three carrier accelerators and the negative electrode 42 of the three carrier accelerators are arranged in the insulator 8. The negative voltage terminal of the first power source 31 is electrically connected to the first electrode 61 of the carrier accelerator. The positive voltage terminal of the first power source 31 is electrically connected to the second electrode 62 of the carrier accelerator. An electric field is generated between the second electrode 62 of the carrier accelerator and the first electrode 61 of the carrier accelerator, and the electric line of force is from the second electrode 62 of the carrier accelerator to the first electrode 61 of the carrier accelerator. Towards). By this electric field, electrons which are majority carriers of the N-type semiconductor 11 are injected from the N-type semiconductor 11 into the P-type semiconductor 10. The second electrode 62 of the carrier accelerator acts as an injection electrode. Electrons injected into the P-type semiconductor 10 are attracted to the second electrode 62 of the carrier accelerator, reach directly under the second electrode 62 of the carrier accelerator, and An inversion layer is formed on the surface. The inversion layer forms the acceleration channel 9. The negative voltage terminal of the third power source 33 is electrically connected to the second electrode 62 of the carrier accelerator. The positive voltage terminal of the third power source 33 is electrically connected to the third electrode 63 of the carrier acceleration device. An electric field generated between the third electrode 63 of the carrier accelerator and the second electrode 62 of the carrier accelerator accelerates electrons injected into the P-type semiconductor 10 into the acceleration channel 9. The third electrode 63 of the carrier accelerator acts as a sliding electrode. The negative voltage terminal of the fourth power source 34 is electrically connected to the third electrode 63 of the carrier accelerator. The positive voltage terminal of the fourth power source 34 is electrically connected to the seventh electrode 67 of the carrier accelerator. An electric field generated between the seventh electrode 67 of the carrier accelerator and the third electrode 63 of the carrier accelerator accelerates electrons injected into the P-type semiconductor 10 into the acceleration channel 9. Since the electrons accelerated on the surface of the P-type semiconductor 10 have sufficient kinetic energy, they penetrate the potential barrier of the irreversible process generator 4 present at the stage of the P-type semiconductor 10 by the quantum mechanical tunnel effect. Passes through and is finally absorbed by the electron absorption collector 26. That is, the seventh electrode 67 of the carrier accelerator acts as a tunnel electrode.

The positive voltage terminal of the second power supply 32 is electrically connected to the fourth electrode 64 of the carrier accelerator. Holes serving as carriers are formed in the N-type semiconductor 11 from the P-type semiconductor 10 using the P-type semiconductor 10 as the carrier output material 1 and the N-type semiconductor 11 as the channel forming material 2. The second power source 32 is used to inject. The negative voltage terminal of the second power supply 32 is electrically connected to the fifth electrode 65 of the carrier accelerator. An electric field is generated between the fifth electrode 65 of the carrier accelerator and the fourth electrode 64 of the carrier accelerator, and the electric line of force is separated from the fourth electrode 64 of the carrier accelerator by the fifth electrode 65 of the carrier accelerator. Head to). Holes that are the majority carriers of the P-type semiconductor 10 are injected into the N-type semiconductor 11 from the P-type semiconductor 10 by this electric field. The fifth electrode 65 of the carrier accelerator acts as an injection electrode. Holes injected into the N-type semiconductor 11 are attracted to the fifth electrode 65 of the carrier accelerator, reach directly under the fifth electrode 65 of the carrier accelerator, and the N-type semiconductor ( An inversion layer is formed on the surface of 11). The inversion layer forms the acceleration channel 9. The positive voltage terminal of the fifth power source 35 is electrically connected to the fifth electrode 65 of the carrier accelerator. The negative voltage terminal of the fifth power source 35 is electrically connected to the sixth electrode 66 of the carrier accelerator. An electric field generated between the sixth electrode 66 of the carrier accelerator and the fifth electrode 65 of the carrier accelerator accelerates holes injected into the N-type semiconductor 11 into the acceleration channel 9. The positive voltage terminal of the sixth power source 36 is electrically connected to the fifth electrode 65 of the carrier accelerator. The negative voltage terminal of the sixth power source 36 is electrically connected to the eighth electrode 68 of the carrier accelerator. An electric field generated between the sixth electrode 66 of the carrier accelerator and the eighth electrode 68 of the carrier accelerator accelerates holes injected into the N-type semiconductor 11 into the acceleration channel 9. The sixth electrode 66 of the carrier accelerator acts as a sliding electrode. Since the holes accelerated in the acceleration channel on the surface of the N-type semiconductor 11 have sufficient kinetic energy, the potential barrier of the irreversible process generator 4 existing at the stage of the N-type semiconductor 11 is changed by the quantum mechanical tunnel effect. Pass through The eighth electrode 68 of the carrier accelerator acts as a tunnel electrode. Holes, which are carriers, are finally absorbed by the hole absorption collector 27.

The hole absorption collector 27 is electrically connected to the positive voltage terminal of the energy accumulator 15, and the electron absorption collector 26 is electrically connected to the negative voltage terminal of the energy accumulator 15. Holes accumulated in the hole absorption collector 27 move to the positive electrode of the energy accumulator 15, and electrons accumulated in the electron absorber collector 26 move to the negative electrode of the energy accumulator 15. The holes accumulated in the positive electrode of the energy accumulator 15 and the electrons accumulated in the negative electrode of the energy accumulator 15 are in the approaching position and are drawn to each other based on Coulomb's law. One terminal of the electrical load 5 is connected to the positive electrode of the energy accumulator 15, and the other terminal of the electrical load 5 is connected to the negative electrode of the energy accumulator 15. Both holes and electrons accumulated in the energy accumulator 15 supply electrical energy to the electrical load 5 by recombination at the electrical load 5.

In the field effect generator according to the ninth embodiment of the present invention, a cross section in the case where both holes and electrons are used as carriers and the electrodes are not insulated is shown in FIG. 69. The PN junction is formed using the P-type semiconductor 10 and the N-type semiconductor 11. An insulator 8 is arranged around the PN junction. The first power source 31, the second power source 32, the third power source 33, the fourth power source 34, the fifth power source 35, and the sixth power source 36 are used to accelerate the carrier. The first power source 31 is used to inject electrons serving as carriers from the N-type semiconductor 11 to the P-type semiconductor 10. The negative voltage terminal of the first power source 31 is electrically connected to the N-type semiconductor 11. The positive voltage terminal of the first power source 31 is electrically connected to the first electrode 61 of the carrier accelerator. An electric field is generated between the first electrode 61 of the carrier accelerator and the N-type semiconductor 11, and the electric line of force is directed from the first electrode 61 of the carrier accelerator to the N-type semiconductor 11. By this electric field, electrons which are majority carriers of the N-type semiconductor 11 are injected from the N-type semiconductor 11 into the P-type semiconductor 10. The first electrode 61 of the carrier accelerator acts as an injection electrode. The electrons injected into the P-type semiconductor 10 are attracted to the first electrode 61 of the carrier accelerator, reach directly under the first electrode 61 of the carrier accelerator, and of the P-type semiconductor 10 An inversion layer is formed on the surface. The inversion layer becomes the acceleration channel 9. The negative voltage terminal of the third power source 33 is electrically connected to the first electrode 61 of the carrier accelerator. The positive voltage terminal of the third power source 33 is electrically connected to the second electrode 62 of the carrier accelerator. An electric field generated between the second electrode 62 of the carrier accelerator and the first electrode 61 of the carrier accelerator accelerates electrons injected into the P-type semiconductor 10 into the acceleration channel 9. The second electrode 62 of the carrier accelerator acts as a sliding electrode. The negative voltage terminal of the fourth power source 34 is electrically connected to the second electrode 62 of the carrier accelerator. The positive voltage terminal of the fourth power source 34 is electrically connected to the fifth electrode 65 of the carrier accelerator. An electric field generated between the fifth electrode 65 of the carrier accelerator and the second electrode 62 of the carrier accelerator accelerates electrons injected into the P-type semiconductor 10 into the acceleration channel 9. The electrons accelerated in the acceleration channel 9 on the surface of the P-type semiconductor 10 have sufficient kinetic energy, so that the potential barrier of the irreversible process generator 4 existing at the stage of the P-type semiconductor 10 is quantum-based. Pass through through tunnel effect. The fifth electrode 65 of the carrier accelerator acts as a tunnel electrode. Electrons as carriers are finally absorbed by the electron absorption collector 26.

In the P-type semiconductor 10, the positive voltage terminal of the second power supply 32 is electrically connected. The first power source 32 is used to inject holes serving as carriers from the P-type semiconductor 10 to the N-type semiconductor 11. The negative voltage terminal of the second power supply 32 is electrically connected to the third electrode 63 of the carrier accelerator. An electric field is generated between the third electrode 63 of the carrier accelerator and the P-type semiconductor 10, and the electric line of force is directed from the P-type semiconductor 10 to the third electrode 63 of the carrier accelerator. Holes that are the majority carriers of the P-type semiconductor 10 are injected into the N-type semiconductor 11 from the P-type semiconductor 10 by this electric field. The third electrode 63 of the carrier accelerator acts as an injection electrode. Holes injected into the N-type semiconductor 11 are attracted to the third electrode 63 of the carrier accelerator, and reach directly under the third electrode 63 of the carrier accelerator, and the N-type semiconductor ( An inversion layer is formed on the surface of 11). The inversion layer becomes the acceleration channel 9. The positive voltage terminal of the fifth power source 35 is electrically connected to the third electrode 63 of the carrier accelerator. The negative voltage terminal of the fifth power source 35 is electrically connected to the fourth electrode 64 of the carrier accelerator. An electric field generated between the fourth electrode 64 of the carrier accelerator and the third electrode 63 of the carrier accelerator accelerates holes injected into the N-type semiconductor 11 into the acceleration channel 9. The fourth electrode 64 of the carrier accelerator acts as a sliding electrode. The positive voltage terminal of the sixth power source 36 is electrically connected to the fourth electrode 64 of the carrier accelerator. The negative voltage terminal of the sixth power source 36 is electrically connected to the sixth electrode 66 of the carrier accelerator. An electric field generated between the fourth electrode 64 of the carrier accelerator and the sixth electrode 66 of the carrier accelerator accelerates holes injected into the N-type semiconductor 11 into the acceleration channel 9. The holes accelerated in the acceleration channel 9 on the surface of the N-type semiconductor 11 have sufficient kinetic energy, so that the potential barrier of the irreversible process generator 4 existing at the stage of the N-type semiconductor 11 is quantum-based. Pass through through tunnel effect. The sixth electrode 66 of the carrier accelerator acts as a tunnel electrode. Holes, which are carriers, are finally absorbed by the hole absorption collector 27.

The hole absorption collector 27 is electrically connected to the positive voltage terminal of the energy accumulator 15, and the electron absorption collector 26 is electrically connected to the negative voltage terminal of the energy accumulator 15. Holes accumulated in the hole absorption collector 27 move to the positive electrode of the energy accumulator 15, and electrons accumulated in the electron absorber collector 26 move to the negative electrode of the energy accumulator 15. The holes accumulated in the positive electrode of the energy accumulator 15 and the electrons accumulated in the negative electrode of the energy accumulator 15 are in the approaching positions and are attracted to each other based on Coulomb's law. One terminal of the electrical load 5 is connected to the positive electrode of the energy accumulator 15, and the other terminal of the electrical load 5 is connected to the negative electrode of the energy accumulator 15. Both holes and electrons accumulated in the energy accumulator 15 supply electrical energy to the electrical load 5 by recombination at the electrical load 5.

70 shows a cross section in the case where both the holes and the electrons are used as carriers in the field effect power generation device according to the ninth embodiment of the present invention, and the channel forming material is inclined. The P-type semiconductor 10 is used as the carrier output material 1, and the N-type semiconductor 11 is used as the channel forming material 2. The PN junction is formed using the P-type semiconductor 10 and the N-type semiconductor 11. An insulator 8 is arranged around the PN junction. Five power sources 30 are used to accelerate the carrier. As the five power sources 30, a first power source 31, a second power source 32, a third power source 33, a fourth power source 34, and a fifth power source 35 are used. The first power source 31 is used to inject electrons serving as carriers from the N-type semiconductor 11 to the P-type semiconductor 10. The positive electrode 41 of the three carrier accelerators and the negative electrode 42 of the three carrier accelerators are arranged in the insulator 8. The negative voltage terminal of the first power source 31 is electrically connected to the first electrode 61 of the carrier accelerator. The positive voltage terminal of the first power source 31 is electrically connected to the second electrode 62 of the carrier accelerator. An electric field is generated between the second electrode 62 of the carrier accelerator and the first electrode 61 of the carrier accelerator, and the electric line of force is from the second electrode 62 of the carrier accelerator to the first electrode 61 of the carrier accelerator. Towards). By this electric field, electrons which are majority carriers of the N-type semiconductor 11 are injected from the N-type semiconductor 11 into the P-type semiconductor 10. The second electrode 62 of the carrier accelerator acts as an injection electrode. Electrons injected into the P-type semiconductor 10 are attracted to the second electrode 62 of the carrier accelerator, reach directly under the second electrode 62 of the carrier accelerator, and An inversion layer is formed on the inclined surface. The inversion layer becomes the acceleration channel 9.

The negative voltage terminal of the second power supply 32 is electrically connected to the second electrode 62 of the carrier accelerator. The positive voltage terminal of the second power supply 32 is electrically connected to the third electrode 63 of the carrier accelerator. An electric field generated between the third electrode 63 of the carrier accelerator and the second electrode 62 of the carrier accelerator accelerates electrons injected into the P-type semiconductor 10, Move. The third electrode 63 of the carrier accelerator acts as a sliding electrode. The negative voltage terminal of the third power source 33 is electrically connected to the third electrode 63 of the carrier accelerator. The positive voltage terminal of the third power source 33 is electrically connected to the fifth electrode 65 of the carrier accelerator. The electric field generated between the fifth electrode 65 of the carrier accelerator and the third electrode 63 of the carrier accelerator accelerates electrons injected into the P-type semiconductor 10 into the acceleration channel 9, The acceleration channel 9 of the surface of the P-type semiconductor is moved. The electrons accelerated in the acceleration channel 9 on the surface of the P-type semiconductor 10 have sufficient kinetic energy, so that the potential barrier of the irreversible process generator 4 existing at the stage of the P-type semiconductor 10 is quantum-based. Pass through through tunnel effect. The fifth electrode 65 of the carrier accelerator acts as a tunnel electrode. Electrons as carriers are finally absorbed by the electron absorption collector 26.

The positive voltage terminal of the fourth power source 34 is electrically connected to the first electrode 61 of the carrier accelerator. The negative voltage terminal of the fourth power source 34 is electrically connected to the fourth electrode 64 of the carrier accelerator. The first power source 34 is used to inject holes serving as carriers from the P-type semiconductor 10 to the N-type semiconductor 11. An electric field is generated between the first electrode 61 of the carrier accelerator and the fourth electrode 64 of the carrier accelerator, and the electric line of force is from the first electrode 61 of the carrier accelerator to the fourth electrode 64 of the carrier accelerator. Towards). Holes that are the majority carriers of the P-type semiconductor 10 are injected into the N-type semiconductor 11 from the P-type semiconductor 10 by this electric field. The first electrode 61 of the carrier accelerator acts as an injection electrode. Holes injected into the N-type semiconductor 11 are attracted to the fourth electrode 64 of the carrier accelerator, reach directly below the fourth electrode 64 of the carrier accelerator, and the N-type semiconductor ( An inversion layer is formed on the inclined surface of 11). The inversion layer becomes the acceleration channel 9. The positive voltage terminal of the fifth power source 35 is electrically connected to the fourth electrode 64 of the carrier accelerator. The negative voltage terminal of the fifth power source 35 is electrically connected to the sixth electrode 66 of the carrier accelerator. An electric field generated between the fourth electrode 64 of the carrier accelerator and the sixth electrode 66 of the carrier accelerator accelerates holes injected into the N-type semiconductor 11 into the acceleration channel 9. The fourth electrode 64 of the carrier accelerator acts as a sliding electrode. The holes accelerated in the acceleration channel 9 on the surface of the N-type semiconductor 11 have sufficient kinetic energy, so that the potential barrier of the irreversible process generator 4 existing at the stage of the N-type semiconductor 11 is quantum-based. Pass through through tunnel effect. The sixth electrode 66 of the carrier accelerator acts as a tunnel electrode. Holes, which are carriers, are finally absorbed by the hole absorption collector 27.

The hole absorption collector 27 is electrically connected to the positive voltage terminal of the energy accumulator 15, and the electron absorption collector 26 is electrically connected to the negative voltage terminal of the energy accumulator 15. Holes accumulated in the hole absorption collector 27 move to the positive electrode of the energy accumulator 15, and electrons accumulated in the electron absorber collector 26 move to the negative electrode of the energy accumulator 15. The holes accumulated in the positive electrode of the energy accumulator 15 and the electrons accumulated in the negative electrode of the energy accumulator 15 are in the approaching positions and are attracted to each other based on Coulomb's law. One terminal of the electrical load 5 is connected to the positive electrode of the energy accumulator 15, and the other terminal of the electrical load 5 is connected to the negative electrode of the energy accumulator 15. Both holes and electrons accumulated in the energy accumulator 15 supply electrical energy to the electrical load 5 by recombination at the electrical load 5.

The upper surface of the Example at the time of using both a hole and an electron as a carrier in the field effect power generation device which concerns on 9th Embodiment of this invention is shown in FIG. The P-type semiconductor 10 is PN-bonded with the N-type semiconductor 11. Both the P-type semiconductor 10 and the N-type semiconductor 11 are bent at right angles, and the occupation area can be reduced. Since the energy accumulator 15 can also be arranged at a close distance between the P-type semiconductor 10 and the N-type semiconductor, the manufacturing is simplified. Electrons that reach the electron absorption collector 26 accumulate on the negative electrode of the energy accumulator 15, and holes that reach the hole absorption collector 27 accumulate on the positive electrode of the energy accumulator 15, Pulled by to form a dipole. Therefore, by injecting most of the carriers from the P-type semiconductor 10 and the N-type semiconductor 11, the amount of electricity stored in the energy accumulator 15 can be increased, so that power generation efficiency is improved.

[Tenth embodiment of the present invention]

In the field effect power generation device according to the tenth embodiment of the present invention, an upper surface when an N-type semiconductor is used as a carrier output material and a P-type semiconductor is used as two parallel channel forming materials is shown in FIG. 72. In the figure, a PN junction is formed by the P-type semiconductor 10 and the N-type semiconductor 11. The negative voltage terminal of the first power source 31 is electrically connected to the N-type semiconductor 11, and the positive voltage terminal of the first power source 31 is electrically connected to the first electrode 61 of the carrier accelerator. The first power source 31 is used to inject electrons serving as carriers from the N-type semiconductor 11 to the P-type semiconductor 10. The negative voltage terminal of the second power supply 32 is electrically connected to the first electrode 61 of the carrier accelerator, and the positive voltage terminal of the second power source 32 is electrically connected to the second electrode 62 of the carrier accelerator. Is connected. The negative voltage terminal of the third power source 33 is electrically connected to the second electrode 62 of the carrier accelerator, and the positive voltage terminal of the third power source 33 is electrically connected to the third electrode 63 of the carrier accelerator. Is connected. The negative voltage terminal of the fourth power source 34 is electrically connected to the third electrode 63 of the carrier accelerator, and the positive voltage terminal of the fourth power source 34 is electrically connected to the fourth electrode 64 of the carrier accelerator. Is connected. The negative voltage terminal of the fifth power source 35 is electrically connected to the fourth electrode 64 of the carrier accelerator, and the positive voltage terminal of the fifth power source 35 is electrically connected to the fifth electrode 65 of the carrier accelerator. Is connected. The negative voltage terminal of the sixth power source 36 is electrically connected to the fifth electrode 65 of the carrier accelerator, and the positive voltage terminal of the sixth power source 36 is electrically connected to the sixth electrode 66 of the carrier accelerator. Is connected. The negative voltage terminal of the seventh power source 37 is electrically connected to the sixth electrode 66 of the carrier accelerator, and the positive voltage terminal of the seventh power source 37 is electrically connected to the seventh electrode 67 of the carrier accelerator. Is connected. The negative voltage terminal of the eighth power source 38 is electrically connected to the seventh electrode 67 of the carrier accelerator, and the positive voltage terminal of the eighth power source 38 is electrically connected to the eighth electrode 68 of the carrier accelerator. Is connected.

An electric field is generated between the first electrode 61 of the carrier acceleration device to which the positive voltage is applied and the N-type semiconductor 11 to which the negative potential is applied. It is injected into the semiconductor 10. The first electrode 61 of the carrier accelerator acts as an injection electrode. Injection of electrons is carried out in the acceleration channel 9 of the surface where the P-type semiconductor 10 is in contact with the insulator 8. The injected electrons may include the first electrode 61, the second electrode 62, the third electrode 63, the fourth electrode 64, the fifth electrode 65, the sixth electrode 66, and the seventh electrode ( 67 is accelerated in the acceleration channel 9 by an electric field applied to the eighth electrode 68 and generates a positive voltage, and is finally absorbed by the electron absorption collector 26. The second electrode 62 of the carrier accelerator, the third electrode 63 of the carrier accelerator, the fourth electrode 64 of the carrier accelerator, the fifth electrode 65 of the carrier accelerator, and the sixth of the carrier accelerator. The electrode 66 acts as a sliding electrode for moving electrons in the acceleration channel. A seventh electrode 67 of the carrier accelerator is used as the emission electrode to emit electrons from the P-type semiconductor 10. The electron absorption collector 26 is electrically connected to the negative voltage terminal of the energy accumulator 15, and the electrons absorbed by the electron absorption collector 26 are accumulated on the negative electrode of the energy accumulator 15. On the other hand, holes are injected from the P-type semiconductor 10 to the N-type semiconductor 11 by the generated electric field. Since the N-type semiconductor is electrically connected to the positive voltage terminal of the energy accumulator 15, holes injected into the N-type semiconductor 11 are accumulated in the positive electrode of the energy accumulator 15. When the electrical load is connected to the energy accumulator 15 in parallel, the positive and negative charges accumulated in the energy accumulator 15 move through the electrical load to perform recombination. As a result, electrical energy is supplied to the electrical load.

Although two P-type semiconductors 10 are shown as an example in FIG. 72, a plurality of P-type semiconductors 10 are actually formed in parallel, and electrons, which are most carriers, reach the electron absorption collector 26 and are generated. It is also possible to increase the electric energy. In the figure, three first electrodes 61 of the carrier accelerator are shown, but are actually arranged around the respective P-type semiconductors 10. Since the carriers in the P-type semiconductors 11 on both sides thereof are accelerated by the first electrodes 61 of one carrier accelerator, the electric field effect generator having this structure makes it possible to efficiently obtain electrical energy.

[Eleventh embodiment of the present invention]

73 shows a cross section in the case where the channel forming material is inclined using an N-type semiconductor as a carrier output material and a P-type semiconductor as a channel forming material in the field effect power generation device according to the eleventh embodiment of the present invention. do. In the figure, a PN junction is formed by the P-type semiconductor 10 and the N-type semiconductor 11. The negative voltage terminal of the first power source 31 is electrically connected to the N-type semiconductor 11, and the positive voltage terminal of the first power source 31 is electrically connected to the first electrode 61 of the carrier accelerator. The first power source 31 is used to inject electrons serving as carriers from the N-type semiconductor 11 to the P-type semiconductor 10. The negative voltage terminal of the second power supply 32 is electrically connected to the first electrode 61 of the carrier accelerator, and the positive voltage terminal of the second power source 32 is electrically connected to the second electrode 62 of the carrier accelerator. Is connected. The negative voltage terminal of the third power source 33 is electrically connected to the second electrode 62 of the carrier accelerator, and the positive voltage terminal of the third power source 33 is electrically connected to the third electrode 63 of the carrier accelerator. Is connected. The negative voltage terminal of the fourth power source 34 is electrically connected to the third electrode 63 of the carrier accelerator, and the positive voltage terminal of the fourth power source 34 is electrically connected to the fourth electrode 64 of the carrier accelerator. Is connected.

An electric field is generated between the first electrode 61 of the carrier acceleration device to which the positive potential is applied and the N-type semiconductor 11 to which the negative potential is applied, and electrons serving as carriers from the N-type semiconductor 11 are P-type by the electric field. It is injected into the semiconductor 10. The first electrode 61 of the carrier accelerator acts as an injection electrode. Injection of electrons is performed at the surface where the P-type semiconductor 10 contacts the insulator 8, and the electrons move in the acceleration channel 9. The injected electrons are applied to the first electrode 61 of the carrier accelerator, the second electrode 62 of the carrier accelerator and the fourth electrode 64 of the carrier accelerator, and are accelerated by the electric field generated by the positive potential. The electrons travel in the acceleration channel 9 at the boundary surface between the P-type semiconductor 10 and the insulator 8. The second electrode 62 of the carrier accelerator and the third electrode 63 of the carrier accelerator serve as sliding electrodes. The third electrode of the carrier accelerator is disposed at the top, and the surface of the P-type semiconductor 10 is inclined upward. Therefore, when the injected electrons move the interface between the P-type semiconductor 10 and the insulator 8, the trajectory of the movement plane of the electrons is not linear due to the inclination of the P-type semiconductor 10, and the acceleration channel depends on the shape of the surface. (9) Move inside. That is, in the initial state, the electron serving as the carrier performs a movement approaching the positive charge of the fourth electrode 64 of the carrier accelerator, but the third electrode 63 of the carrier accelerator is caused by the inclination of the surface of the P-type semiconductor 10. In the direction of). Electrons change linear trajectories, move in the acceleration channel 9 and are finally absorbed by the electron absorption collector 26. Since the electron, which is a carrier, passes through the potential barrier of the irreversible process generator 4 immediately before being input to the electron collecting collector 26 by the quantum mechanical tunnel effect, the fourth electrode 64 of the carrier accelerator device is tunneled. It acts as an electrode. The electron absorption collector 26 is electrically connected to the energy accumulator 15, and the electrons absorbed by the electron absorption collector 26 are accumulated on the negative electrode of the energy accumulator 15. On the other hand, holes are injected from the P-type semiconductor 10 to the N-type semiconductor 11 by the generated electric field effect. Since the N-type semiconductor is electrically connected to the energy accumulator 15, holes injected into the N-type semiconductor 11 are accumulated at the positive electrodes of the energy accumulator 15. When the electrical load 5 is connected to the energy accumulator 15 in parallel, the electric charge accumulated in the energy accumulator 15 is recombined via the electric load 5. As a result, electrical energy is supplied to the electrical load 5, where electrical energy is consumed.

[Twelfth embodiment of the present invention]

In the field effect generator according to the twelfth embodiment of the present invention, the external appearance when graphene is used as the channel forming material is shown in FIG. 74. The carrier output material 1 and the channel forming material 2 are disposed on the substrate 19. The carrier output material 1 is a conductive material, and specific examples thereof include titanium, nickel, copper, gold and silver. An insulator 8 is disposed above the substrate, and the first electrode 61 of the carrier accelerator, the second electrode 62 of the carrier accelerator, and the third electrode 63 of the carrier accelerator are disposed on the insulator 8. ) And a fourth electrode 64 of the carrier acceleration device. The case where graphene is used as the channel forming material 2 is shown. When carbon atoms are chemically bonded by sp2 hybrid orbits, they form two-dimensionally bonded carbon hexagonal networks. The aggregate of carbon atoms having this planar structure is called graphene. Graphene having a structure in which carbon atoms are arranged in an eye shape of a hexagonal network forms one layer of graphite, and multilayer graphene is laminated to form the whole graphite. In graphene, six-membered rings of carbon are bonded in a planar shape, thickness is an order of molecules, and electrical conductivity is very good in the planar direction. That is, the mobility of the electrons in the graphene is very large, reaches 200,000 cm ² / Vs, and the electrons move in a plane from the six-membered ring of carbon to the six-membered ring with little resistance.

75 shows a cross section in the case where graphene is used as the channel forming material in the field effect generator according to the twelfth embodiment of the present invention. The carrier output material 1 and the channel forming material 2 are disposed on the substrate 19. An insulator 8 is disposed on an upper portion of the substrate, and an upper portion of the insulator 8 includes a first electrode 61 of a carrier accelerator, a second electrode 62 of a carrier accelerator, and a third electrode 63 of a carrier accelerator. ) And a fourth electrode 64 of the carrier acceleration device. The negative voltage terminal of the first power source 31 is electrically connected to the carrier output material 1, and the positive voltage terminal of the first power source 31 is electrically connected to the first electrode 61 of the carrier accelerator. A first power source 31 is used to inject electrons that are carriers from the carrier input and output material 1 into the channel forming material 2. The negative voltage terminal of the second power supply 32 is electrically connected to the first electrode 61 of the carrier accelerator, and the positive voltage terminal of the second power source 32 is electrically connected to the second electrode 62 of the carrier accelerator. Is connected. The negative voltage terminal of the third power source 33 is electrically connected to the second electrode 62 of the carrier accelerator, and the positive voltage terminal of the third power source 33 is electrically connected to the third electrode 63 of the carrier accelerator. Is connected. The negative voltage terminal of the fourth power source 34 is electrically connected to the third electrode 63 of the carrier accelerator, and the positive voltage terminal of the fourth power source 34 is electrically connected to the fourth electrode 64 of the carrier accelerator. Is connected.

The electric field is formed by the positive voltage applied from the first power supply 31 to the first electrode 61 of the carrier accelerator and the negative voltage applied to the carrier output material 1. Electrons as carriers are injected from the carrier output material 1 into the graphene-like channel forming material 2 by an electric field formed in the direction of the carrier output material 1 from the first electrode 61 of the carrier accelerator. The first electrode 61 of the carrier accelerator acts as an injection electrode. The injected electrons are generated in the acceleration channel 9 by the first electrode 61 of the carrier accelerator, the second electrode 62 of the carrier accelerator, the third electrode 63 of the carrier accelerator and the fourth of the carrier accelerator. Accelerated by the positive voltage applied to the electrode 64. The second electrode 62 of the carrier accelerator, the third electrode 63 of the carrier accelerator, and the fourth electrode 64 of the carrier accelerator serve as sliding electrodes in which electrons accelerate and move the surface of the graphene.

FIG. 76 is a cross-sectional view of the field effect generation device according to the twelfth embodiment of the present invention when the graphene is used as the channel forming material with the electron absorption collector enlarged. The negative voltage terminal of the fifth power source 35 is electrically connected to the fourth electrode 64 of the carrier accelerator, and the positive voltage terminal of the fifth power source 35 is electrically connected to the fifth electrode 65 of the carrier accelerator. Is connected. The negative voltage terminal of the sixth power source 36 is electrically connected to the fifth electrode 65 of the carrier accelerator, and the positive voltage terminal of the sixth power source 36 is electrically connected to the sixth electrode 66 of the carrier accelerator. Is connected. The fifth electrode 65 of the carrier accelerator and the sixth electrode 66 of the carrier accelerator are also disposed among the insulators 8 below, and are electrically connected to the sixth power source 36 and the like. The electrons acquire a sufficiently large kinetic energy by moving the electrons at high speed on the surface of the channel forming material 2 which is graphene. The accelerated electrons escape from the surface of the channel forming material 2 and are emitted in vacuum. The fifth electrode 65 of the carrier accelerator acts as an emission electrode. At the time of emission, electrons pass through the potential barrier, which is the irreversible process generating unit 4, by the quantum mechanical tunnel effect. The emitted electrons are accelerated by the positive voltage applied to the sixth electrode 66 of the carrier accelerator. That is, the sixth electrode 66 of the carrier acceleration device acts as an acceleration electrode. When the emergency electrons are accelerated and the kinetic energy is sufficiently large, the repulsive force according to Coulomb's law received from the electron absorption collector 26 is overcome and collides with the electron absorption collector 26 and is collected therein. Since the electron absorption collector 26 is electrically connected to one terminal of the energy accumulator 15, the electrons reaching the electron absorption collector 26 reach one terminal of the energy accumulator 15. Holes remaining in the carrier output material 1 reach the other terminal of the energy accumulator 15, and holes and electrons form a pair in the energy accumulator 15 and accumulate there. If one terminal of the electrical load 5 is connected to one terminal of the energy accumulator 15 and the other terminal of the electrical load 5 is connected to the other terminal of the energy accumulator 15, the energy accumulator ( Holes and electrons accumulated in 15 arrive at the electrical load 5 and recombine there, and both are extinguished, and electrical energy is supplied to the electrical load 5 in this process.

Graphene is a good conductor of electricity and may be a material having high thermal conductivity, and an example of electric field electric power generation using a thermal feedback method using these properties is described below. 77 shows the arrangement of the carrier absorbing graphene and the carrier emitting graphene in the field effect generator according to the twelfth embodiment of the present invention. In this figure, the carrier absorbing graphene 71 and the carrier emitting graphene 72 are thermally well connected. That is, the carrier absorbing graphene 71 is very thin, and heat conducts well two-dimensionally to the surface, and heat conducts well to the carrier emitting graphene 72. Preferably, the carrier absorbing graphene 71 and the carrier emitting graphene 72 are integrally manufactured and have a structure that is bent at approximately right angles. The carrier absorbing substrate 73 and the carrier emitting substrate 74 are disposed at approximately right angles to each other, which are substrates for holding the carrier absorbing graphene 71 and the carrier emitting graphene 72. As for the carrier absorption board | substrate 73 and the carrier emission board | substrate 74, a poor conductor of heat is preferable. In other words, when the heat is conducted two-dimensionally inside the graphene and the amount of thermal energy released to the outside via the carrier absorbing substrate 73 and the carrier emitting substrate 74 is small, the power generation efficiency is improved. Therefore, when the graphene film of carbon is laminated like the graphene, the thermal conductivity between the stacks is small, and heat is blocked between the layers, good power generation efficiency is obtained.

The object of the structure shown in FIG. 77 is called an emitter collector collector. Place two emitter collector complexes in point symmetry. FIG. 78 is a sectional view when the thermal feedback method is adopted using the carrier absorbing graphene and the carrier emitting graphene in the field effect generator according to the twelfth embodiment of the present invention. The carrier discharge substrate 74 shown in the lower part of the figure is a poor conductor of heat, and a carrier discharge graphene 72 is disposed on one surface thereof. An insulator 8 is disposed on the surface of the carrier release graphene 72, and the first electrode 61 of the carrier accelerator, the second electrode 62 of the carrier accelerator, and the carrier accelerator of the insulator 8 are disposed. The third electrode 63 and the fourth electrode 64 of the carrier accelerator are arranged. In addition, in Fig. 78, the first power source 31, the second power source 32, the third power source 33, the fourth power source 34, the fifth power source 35 and the sixth power source shown in Figs. The display of the power supply 36 is omitted. In addition, in FIG. 78, the display of the 5th electrode 65 of the carrier acceleration apparatus and the 6th electrode 66 of the carrier acceleration apparatus shown in FIG. 76 is also abbreviate | omitted. The positive voltage is applied from the first power source 31 to the first electrode 61 of the carrier accelerator shown in the lower part of FIG. 78, and the negative voltage is applied from the first power source 31 to the carrier output material 1. This forms an electric field from the first electrode 61 of the carrier accelerator in the direction of the carrier output material 1. Electrons which are carriers from the carrier output material 1 are injected into the carrier emission graphene 72 (equivalent to the channel forming material 2) by the formed electric field. The first electrode 61 of the carrier accelerator acts as an injection electrode. The injected electrons are accelerated by the second electrode 62 of the carrier accelerator, the third electrode 63 of the carrier accelerator and the fourth electrode 64 of the carrier accelerator, and are radiated in vacuum. The second electrode 62 of the carrier accelerator, the third electrode 63 of the carrier accelerator and the fourth electrode 64 of the carrier accelerator serve as sliding electrodes. The emitted electrons 50 move upward. The emitted electrons 50 impinge on and are absorbed by the carrier absorbing graphene 71 disposed at the top of the figure. When colliding, the kinetic energy held by the electrons 50 is converted into thermal energy. Therefore, the temperature of the carrier absorption graphene 71 rises. The heat energy of the carrier absorbing graphene 71 is transferred to the carrier emitting graphene 72 shown at the top of the figure, and the temperature of the carrier emitting graphene 72 rises to become high temperature. Both the carrier absorbing substrate 73 and the carrier absorbing substrate 74 shown in the upper part of the figure are poor conductors of heat, and the thermal energy flowing out to the outside is small. The electrons 50 absorbed by the carrier absorbing graphene 71 shown at the top of the figure are moved to the energy accumulator 15 and are accumulated there. On the other hand, holes remain in the carrier emission graphene 72 shown in the lower part of the figure. The remaining holes move to the energy accumulator 15, and electrons and holes form a pair, and accumulate therein.

A carrier emitting graphene 72 is disposed on one surface of the carrier emitting substrate 74 shown at the top of the figure. An insulator 8 is disposed on the surface of the carrier release graphene 72, and the first electrode 61 of the carrier accelerator, the second electrode 62 of the carrier accelerator, and the carrier accelerator of the insulator 8 are disposed. The third electrode 63 and the fourth electrode 64 of the carrier accelerator are arranged. The positive voltage is applied from the first power source 31 to the first electrode 61 of the carrier accelerator and the negative voltage is applied from the first power source 31 to the carrier output material 1. An electric field is formed from the first electrode 61 in the direction of the carrier output material 1. By the electric field formed, electrons which are carriers from the carrier output material 1 are injected into the carrier emission graphene 72 (corresponding to the channel forming material 2) shown at the top of the figure. The first electrode 61 of the carrier accelerator acts as an injection electrode. Since the carrier releasing graphene 72 becomes hot and the electrons among them acquire a large kinetic energy, the injected electrons are transferred to the second electrode 62 of the carrier accelerator, the third electrode 63 of the carrier accelerator, and the carrier acceleration. Accelerated by the fourth electrode 64 of the device, a good emission in vacuum. The second electrode 62 of the carrier accelerator, the third electrode 63 of the carrier accelerator and the fourth electrode 64 of the carrier accelerator serve as sliding electrodes. The electrons 50 emitted in the vacuum move in the lower direction of the drawing, collide with the carrier absorbing graphene 71 disposed below the drawing, and are absorbed therein. At this time, the kinetic energy held by the electron 50 is converted into thermal energy. Therefore, the temperature of the carrier absorption graphene 71 becomes high. The heat energy of the carrier absorbing graphene 71 is transferred to the carrier emitting graphene 72 disposed at the bottom of the figure, and the temperature of the carrier emitting graphene 72 rises to become high temperature. Electrons absorbed by the carrier absorbing graphene 71 shown in the lower part of the figure are moved to the energy accumulator 15 and are accumulated therein. On the other hand, holes remain in the carrier emission graphene 72 shown in the upper part of the figure. The remaining holes move to the energy accumulator 15, and electrons and holes form a pair, and accumulate there.

The temperature of the carrier emitting graphene 72 rises, thereby increasing the amount of electrons that are emitted in vacuum there. By repeating this process, the number of electrons 50 emitted from the carrier emitting graphene 72 shown at the top of the figure and the carrier emitting graphene 72 shown at the bottom of the figure increases. Therefore, as the temperature rises, the number of electrons 50 absorbed by the carrier absorbing graphene 71 increases. Therefore, the number of electrons 50 moving to the energy accumulator 15 also increases. On the other hand, holes remain in the carrier emission graphene 72 which has emitted electrons. The remaining holes move to the energy accumulator 15 and are accumulated in pairs with the electrons. When the electrical load 5 is connected to both terminals of the energy accumulator 15, the electrons and holes accumulated in the energy accumulator 15 move to the electrical load 5, and recombination is performed therein. Extinct When the electrons and holes are dissipated, electrical energy is supplied to the electrical load 5.

By repeating the above process, both the carrier absorbing graphene 71 and the carrier emitting graphene 72 become high temperature, and the number of electrons 50 which are emitted in vacuum increases. It is also possible to accumulate some of the emitted electrons 50 in the energy accumulator 15 and assign the remaining electrons to the next emission. This case is called continuous field effect development. On the other hand, when a pulsed voltage is applied to the electrode 60 of a carrier accelerator, it is called time-division electric field effect development. In the time division type electric field effect development, there are periods in which carriers are radiated and carriers are accumulated. In the emission period of the carrier, electrons are emitted from the carrier emitting graphene 72 and absorbed by the carrier absorbing graphene 71. In the accumulation period of the carrier, electrons absorbed by the carrier absorption graphene 71 are accumulated in the energy accumulator 15. The present invention includes field effect generation in a continuous mode and field effect generation in a time division method.

[Thirteenth Embodiment of the Present Invention]

Electrons are emitted from the channel forming material 2 of the royal path, electrons are collected in the royal electron absorption collector, electrons impart collision energy to the electron absorption collector of the royal path, and the electron absorption collector of the royal path is heated. The heat energy of the electron-absorbing collector is conducted to the channel forming material 2 to the return, and the temperature of the channel forming material 2 to the return rises so that a large amount of electrons are emitted from the channel forming material 2 to the return, A large amount of electrons are collected in the electron absorbing collector of the large amount, and a large amount of electrons impinge the collision energy to the electron absorbing collector of the ear, thereby heating the electron absorbing collector into the ear, and the thermal energy of the electron absorbing collector of the ear is the channel forming material of the return path. Conducted to (2) and repeats a process in which more electrons are radiated from the channel forming material (2) of the channel by increasing the temperature of the channel forming material (2) of the channel. A power output device which increases as a field-effect power generation is referred to as the thermal feedback system.

FIG. 79 is a sectional view in the case of employing the thermal feedback system in the field effect generator according to the thirteenth embodiment of the present invention. In the figure, when the start switch 101 of the mode 1 is in the conduction state, the enlarged periphery of the carrier output material 107 of the path is shown in FIG. 80. FIG. 81 is a cross-sectional view showing an enlarged periphery of a carrier output material to the home in the case of employing the thermal feedback method in the field effect generator according to the thirteenth embodiment of the present invention. In FIG. 79, when the start switch 102 of the mode 2 is in the conduction state, the vicinity of the carrier output material 108 to the return is enlarged to FIG. 81.

Thermal feedback generation of field effect power generation is classified into three modes.

[Mode 0]

79, when the start switch 101 of mode 1 is in a conducting state, and the start switch 102 of mode 2 is also in a conducting state.

[Mode 1]

79, when the start switch 101 of mode 1 is in the conducting state and the start switch 102 of the mode 2 is in the non-conducting state.

[Mode 2]

79, when the start switch 101 of mode 1 is in a non-conductive state, and the start switch 102 of mode 2 is in a conducting state.

In the initial state of the field effect generation of the thermal feedback system, the operation of [Mode 1] is started. When the time elapsed by the operation of [Mode 1] exceeds the threshold value of the temperature of the channel forming material 2 and the return channel forming material 2, the operation proceeds to [Mode 1]. Then, the operation proceeds to the operation of [Mode 2], and the field effect generation reaches the steady state by repeating the operation of [Mode 1] and the operation of [Mode 2].

[Mode 0]

In the initial state, the temperature of the channel forming material 2 of the return path and the channel forming material 2 of the return path is raised, thereby providing thermal energy to the channel forming material 2 of the return path and the channel forming material 2 of the return path. In the case of heating using a heater as the thermal energy, in the case of applying solar heat, in the case of applying thermal energy from another heat source, and the like. In the case of briefly heating the channel forming material 2 of the return path and the channel forming material 2 of the return path, the start switch 101 of mode 1 is set to the conduction state in FIG. 79 and the start switch 102 of mode 2 is turned on. ) Is also set to the conductive state. The first power source 31, the second power source 32, the third power source 33, and the fourth power source 34 are used as the power source for the forward path. As shown in FIG. 80, the channel forming material 2 is electrically connected to the carrier output material 107 of the route. The negative voltage terminal of the first power source 31 is electrically connected to the carrier output material 107 of the low path, and the positive voltage terminal of the first power source 31 is electrically connected to the first electrode 61 of the carrier accelerator. do. The positive voltage applied to the first electrode 61 of the carrier accelerator and the negative voltage applied to the carrier output material 107 of the path generate an electric field, and the electrons from the carrier output material 107 of the path are generated based on the generated electric field effect. Is injected into the channel forming material 2. The first electrode 61 of the carrier accelerator acts as an injection electrode. The injected electrons move through the acceleration channel 9 on the surface of the channel forming material 2 and pass through the potential barrier present in the irreversible process generating unit 4 by the quantum mechanical tunnel effect. Emitted. The first electrode 61 of the carrier accelerator also acts as an emission electrode. The emitted electrons accelerate and progress in the acceleration channel 9.

As shown in FIG. 79, electrons which are already immunized by the positive voltage which the 2nd power supply 32 applies to the 2nd electrode 62 of a carrier accelerator are accelerated and advanced in the acceleration channel 9. As shown in FIG. The electrons that are already emitted by the positive voltage applied by the third power supply 33 to the third electrode 63 of the carrier acceleration device are further accelerated in the acceleration channel 9 to proceed. The electrons that are already impressed by the positive voltage applied by the fourth power source 34 to the fourth electrode 64 of the carrier acceleration device further accelerate and progress in the acceleration channel 9. The second electrode 62 of the carrier accelerator, the third electrode 63 of the carrier accelerator and the fourth electrode 64 of the carrier accelerator serve as the acceleration electrode. Finally, the emitted and accelerated electrons collide with the electron-absorbing collector 229 of the path and are collected therein. At this time, the kinetic energy retained by the accelerated electrons is supplied to the electron absorption collector 229 of the royal path, so that the temperature of the electron absorption collector 229 of the royal path increases. In addition, negative charges are stored in the electron absorption collector 229 of the path in which the electrons are collected. The thermal energy supplied to the electron-absorbing collector 229 of the path is conducted to the carrier output material 108 of the return path via the path conductor 123 of the path. Electrons accumulated in the path-absorbing electron collector 229 reach the carrier output material 108 in the path via the path-conductor 123 of the path. The fifth power source 35, the sixth power source 36, the seventh power source 37, and the eighth power source 38 are used as the power source for the return. As shown in FIG. 81, the channel forming material 2 is electrically connected to the carrier output material 108 into the ear. The negative voltage terminal of the fifth power source 35 is electrically connected to the carrier output material 108 to the return, and the positive voltage terminal of the fifth power source 35 is electrically connected to the fifth electrode 65 of the carrier accelerator. do. The positive voltage applied to the fifth electrode 65 of the carrier accelerator and the negative voltage applied to the carrier output material 108 to the home generate an electric field, and the electrons from the carrier output material 108 to the home are generated based on the generated electric field effect. Is injected into the channel forming material 2. The fifth electrode 65 of the carrier accelerator acts as an injection electrode. The injected electrons move on the surface of the channel forming material 2 and pass through the potential barrier present in the irreversible process generating unit 4 by the quantum mechanical tunnel effect, so that the electrons are emitted in the vacuum. The fifth electrode 65 of the carrier accelerator also acts as an emission electrode. The emitted electrons accelerate and progress in the acceleration channel 9.

As illustrated in FIG. 79, electrons that have been emitted by the positive voltage applied by the sixth power supply 36 to the sixth electrode 66 of the carrier accelerator are accelerated in the acceleration channel 9 and proceed. The electrons that are already emitted by the positive voltage applied by the seventh power supply 37 to the seventh electrode 67 of the carrier accelerator are further accelerated in the acceleration channel 9 and proceed. The electrons that are already emitted by the positive voltage applied by the eighth power source 38 to the eighth electrode 68 of the carrier acceleration device are further accelerated in the acceleration channel 9 and proceed.

The sixth electrode 66 of the carrier accelerator, the seventh electrode 67 of the carrier accelerator, and the eighth electrode 68 of the carrier accelerator serve as acceleration electrodes. Finally, the emitted and accelerated electrons impinge on the electron absorption collector 230 into the ear and are collected therein. At this time, the kinetic energy retained by the accelerated electrons is supplied to the electron-absorbing collector 230 in the ear, thereby increasing the temperature of the electron-absorbing collector 230 in the ear. In addition, negative charges are accumulated in the electron-absorbing collector 230 for collecting ears. The thermal energy supplied to the returning electron absorbing collector 230 is conducted to the carrier output material 107 of the return path via the returning heat conductor 124. Electrons accumulated in the returning electron absorbing collector 230 reach the carrier output material 107 of the return path via the heat conduction 124 of the returning path. Since electrons reach the carrier output material 107 of the royal path, and thermal energy is conducted to the carrier output material 107 of the royal path, a large amount of electrons are injected into the channel forming material 2 from the carrier output material 107 of the royal path. As a result, the number of electrons emitted from the channel forming material 2 increases. By repeating the above process, the temperature of the carrier output material 107 of the return path and the carrier output material 108 of the return rises. That is, both the carrier output material 107 of the return path and the carrier output material 108 of the return path reach a high temperature state, and the electrons in them retain a large kinetic energy so that the channel forming material from the carrier output material 108 is A large amount of electrons is injected into (2). The temperature in the channel forming material 2 rises, and a large amount of electrons are emitted from the channel forming material 2 because the electrons inside thereof have a large kinetic energy. When this state is reached, full-scale power generation can be carried out, so the mode 1 is shifted.

[Mode 1]

When it is switched to the mode 1, the start switch 101 of the mode 1 is set to the conduction state in FIG. 79, and the start switch 102 of the mode 2 is set to the non-conduction state. The first power source 31, the second power source 32, the third power source 33, and the fourth power source 34 are used as the power source for the forward path. The channel forming material 2 is electrically connected with the carrier output material 107 of the path. As shown in FIG. 80, the negative voltage terminal of the first power supply 31 is electrically connected to the carrier output material 107 of the low path, and the positive voltage terminal of the first power supply 31 is the first electrode of the carrier accelerator. It is electrically connected to 61. The positive voltage applied to the first electrode 61 of the carrier accelerator and the negative voltage applied to the carrier output material 107 of the path generate an electric field, and the electrons from the carrier output material 107 of the path are generated based on the generated electric field effect. Is injected into the channel forming material 2. The first electrode 61 of the carrier accelerator acts as an injection electrode. Since the temperature of the carrier output material 107 of the path is high by the process of mode 0, the kinetic energy retained by the electrons in the carrier output material 107 of the path is increased, and the channel forming material ( The number of electrons injected into 2) increases. The injected large amount of electrons moves on the surface of the channel forming material 2 and passes through the potential barrier present in the irreversible process generator 4 by the quantum mechanical tunnel effect. do. The first electrode 61 of the carrier accelerator also acts as an emission electrode. The emitted electrons accelerate and progress in the acceleration channel 9. A large amount of electrons that are already emitted by the positive voltage applied by the second power supply 32 to the second electrode 62 of the carrier accelerator are accelerated and advanced in the acceleration channel 9. The large amount of electrons which are already impressed by the positive voltage applied by the third power supply 33 to the third electrode 63 of the carrier acceleration device further accelerate and progress in the acceleration channel 9. A large amount of electrons that are already immobilized by the positive voltage applied by the fourth power source 34 to the fourth electrode 64 of the carrier acceleration device are further accelerated in the acceleration channel 9 and proceed. The second electrode 62 of the carrier accelerator, the third electrode 63 of the carrier accelerator and the fourth electrode 64 of the carrier accelerator serve as the acceleration electrode. Finally, a large amount of electrons accelerated and accelerated collide with the electron-absorbing collector 229 in the path, and are collected therein. At this time, the kinetic energy retained by the accelerated electrons is supplied to the electron absorption collector 229 of the royal path, so that the temperature of the electron absorption collector 229 of the royal path increases. Thermal energy supplied to the electron-absorbing collector 229 of the path is conducted to the carrier output material 108 of the return path via the path conductor 123 of the path. Negative charges are accumulated in the electron-absorbing collector 229 of the royal path in which a large amount of electrons are collected. On the other hand, a large amount of holes remain in the carrier output material 107 of the royal path injecting a large amount of electrons. A large amount of electrons collected in the path-absorbing electron collector 229 moves to the energy accumulator 115 of mode 1, and a large amount of holes remaining in the carrier output material 107 of the path passes to the energy accumulator of mode 1 115) and accumulate there. In the process, the initiating switch 102 of mode 2 is non-conducting, and since no electric field is applied to the circuit to the return, electrons injected from the carrier output material 108 to the return are almost zero. Therefore, all of the electrons collected by the electron-absorbing collector 229 of the royal path move to the energy accumulator 115 of the mode 1. When the electrical load 5 is connected in parallel to the energy accumulator 115 of mode 1, the generated electrical energy is consumed.

[Mode 2]

When it is switched to the mode 2, in Fig. 79, the start switch 101 of the mode 1 is set to the non-conducting state, and the start switch 102 of the mode 2 is set to the conducting state. The fifth power source 35, the sixth power source 36, the seventh power source 37, and the eighth power source 38 are used as the power source for the return. Channel forming material 2 is electrically connected with the carrier output material 108 to the ear. As shown in FIG. 81, the negative voltage terminal of the fifth power source 35 is electrically connected to the carrier output material 108 to the return, and the positive voltage terminal of the fifth power source 35 is the fifth electrode of the carrier accelerator. It is electrically connected to 65. The positive voltage applied to the fifth electrode 65 of the carrier accelerator and the negative voltage applied to the carrier output material 108 to the home generate an electric field, and the electrons from the carrier output material 108 to the home are generated based on the generated electric field effect. Is injected into the channel forming material 2. The fifth electrode 65 of the carrier accelerator acts as an injection electrode. Due to the high temperature of the carrier output material 108 to the return by the process of mode 0, the kinetic energy retained by the electrons in the carrier output material 108 to the return increases, and the channel forming material ( The number of electrons injected into 2) increases. The injected large amount of electrons moves on the surface of the channel forming material 2 and passes through the potential barrier present in the irreversible process generator 4 by the quantum mechanical tunnel effect. do. The electrons which have already been accelerated proceed in the acceleration channel 9. A large amount of electrons that are already emitted by the positive voltage applied by the sixth power supply 36 to the sixth electrode 66 of the carrier acceleration device accelerate and progress in the acceleration channel 9. A large amount of electrons that are already impressed by the positive voltage applied by the seventh power supply 37 to the seventh electrode 67 of the carrier acceleration device further accelerate and progress in the acceleration channel 9. The large amount of electrons which are already imposed by the positive voltage applied by the eighth power source 38 to the eighth electrode 68 of the carrier acceleration device further accelerate and progress in the acceleration channel 9. The sixth electrode 66 of the carrier accelerator, the seventh electrode 67 of the carrier accelerator, and the eighth electrode 68 of the carrier accelerator serve as acceleration electrodes. Finally, a large amount of accelerated electrons collide with the electron-absorbing collector 230 into the ear and are collected therein. At this time, the kinetic energy retained by the accelerated electrons is supplied to the electron-absorbing collector 230 in the ear, thereby increasing the temperature of the electron-absorbing collector 230 in the ear. The thermal energy supplied to the returning electron absorbing collector 230 is conducted to the carrier output material 107 of the return path via the returning heat conductor 124. Negative charges are accumulated in the electron-absorbing collector 230 to the ears where a large amount of electrons are collected. On the other hand, a large amount of holes remain in the carrier output material 108 into the ear injecting a large amount of electrons. A large amount of electrons collected by the electron-absorbing collector 230 in the return flows to the energy accumulator 116 in mode 2, and a large amount of holes remaining in the carrier output material 108 in the return flows into the energy accumulator in mode 2 116) and accumulate there. In the process, the initiating switch 101 of Mode 1 is in a non-conducting state, and since no electric field is applied to the return circuit, electrons injected from the carrier output material 108 of the return path are almost zero. Thus, all of the electrons collected by the electron absorption collector 230 back to the movement to the energy accumulator 116 of the mode 2. When the electrical load 5 is connected in parallel to the energy accumulator 116 of mode 2, the generated electrical energy is consumed.

By repeating the above-described mode 1 and mode 2 alternately, the temperature of the carrier output material 107 of the return path, the carrier output material 108 of the return path, and the channel forming material 2 of the return path and the return path rise, so that the mode 1 and the mode When the switching time of 2 is shortened, these high temperature states are maintained. The number of electrons injected from the carrier output material 107 of the return path and the carrier output material 108 of the return path to the channel forming material 2 of the return path and the return path increases. In addition, since the number of electrons that are emitted in the vacuum from the channel forming material 2 between the return path and the return path increases, the power obtained by power generation increases. In conclusion, since the kinetic energy and charges of electrons accelerated by the field effect are effectively used for power generation, the field effect power generation device is capable of generating good efficiency, and is widely distributed in the world to solve the problem of energy depletion and the burning of fossil fuel. We can solve the difficulties of destruction of global environment caused by this.

[Fourteenth Embodiment of the Invention]

In the field effect generator according to the fourteenth embodiment of the present invention, a cross section in the case of employing the thermal feedback method is shown in FIG. 82. The electric field effect generator of the thermal feedback system is divided into the power generation of the royal road and the power generation of the home, and thus, the first power source 31, the second power source 32, the third power source 33 and the fourth power source 34 as the power source of the path. Use As shown in the figure, the carrier output material 333 of the path, the channel forming material 335 of the path, and the electron absorption collector 229 of the path are disposed on the surface of the substrate 19. Graphene is used as an embodiment of the channel forming material 335 in the outward path. The channel forming material 335 of the graphene route is electrically connected to the carrier output material 333 of the route. An insulator 8 is disposed on the upper surface of the carrier output material 333 of the path, the channel forming material 335 of the path, and the electron absorption collector 229 of the path. On the label surface of the insulator 8, the first electrode 61 of the carrier accelerator of the outward path, the second electrode 62 of the carrier accelerator of the outward path, the third electrode 63 of the carrier accelerator of the outbound path and the carrier of the outward path The fourth electrode 64 of the accelerator device is arranged.

In the field effect power generation device of the thermal feedback method, there are the operation of the return path and the operation of the return path, and they perform parallel operation. In FIG. 82, the positive voltage terminal of the first power supply 31 is electrically connected to the first electrode 61 of the carrier accelerator. The negative voltage terminal of the first power source 31 is electrically connected to the carrier output material 333 of the path. An electric field is generated between the first electrode 61 of the carrier accelerator and the carrier output material 333 of the path. Electrons are injected from the carrier output material 333 of the path to the channel forming material 335 of the path by the generated electric field effect. The first electrode 61 of the carrier accelerator acts as an injection electrode. A first power source 31 is used to inject electrons that are carriers from the carrier output material 333 of the path to the channel forming material 335 of the path. The negative voltage terminal of the second power supply 32 is electrically connected to the first electrode 61 of the carrier accelerator, and the positive voltage terminal of the second power source 32 is electrically connected to the second electrode 62 of the carrier accelerator. Is connected. The negative voltage terminal of the third power source 33 is electrically connected to the second electrode 62 of the carrier accelerator, and the positive voltage terminal of the third power source 33 is electrically connected to the third electrode 63 of the carrier accelerator. Is connected. The second electrode 62 of the carrier accelerator and the third electrode 63 of the carrier accelerator serve as sliding electrodes.

The negative voltage terminal of the fourth power source 34 is electrically connected to the third electrode 63 of the carrier accelerator, and the positive voltage terminal of the fourth power source 34 is electrically connected to the fourth electrode 64 of the carrier accelerator. Is connected. The fourth electrode 64 of the carrier accelerator acts as an emission electrode. An electric field is generated between the first electrode 61 of the carrier accelerator to which the positive voltage of the first power source 31 is applied and the carrier output material 333 of the path to which the negative voltage of the first power source 31 is applied. By the action of the electric field, electrons that are carriers are injected from the carrier output material 333 of the path into the channel forming material 335 of the path. At this time, the potential barrier between the carrier output material 333 of the path and the channel forming material 335 of the path is applied to the electric field generated between the first electrode 61 of the carrier accelerator and the carrier output material 333 of the path. Due to the tunnel effect, electrons pass through. In other words, the first electrode 61 of the carrier accelerator acts as a tunnel electrode. The injected electrons move in the acceleration channel 9. The injected electrons are applied to the first electrode 61 of the carrier accelerator, the second electrode 62 of the carrier accelerator, the third electrode 63 of the carrier accelerator, and the fourth electrode 64 of the carrier accelerator. The electric field generated by the voltage is accelerated in the acceleration channel 9 to increase the kinetic energy of the electrons. The fourth electrode 64 of the carrier acceleration device also functions as an acceleration electrode. Electrons having a large kinetic energy arrive at the irreversible process generator 4 and are emitted from the channel forming material 335 in the outward path. At this time, a potential barrier corresponding to the work function between the channel forming material 335 of the royal path and the vacuum passes through the generated electric field based on the tunnel effect, and electrons are emitted in the vacuum. The fourth electrode 64 of the carrier accelerator also acts as an emission electrode. Emitted electrons fly between the insulator 8 and the substrate 19 and reach the electron-absorbing collector 229 of the path. Electrons that reach the electron-absorbing collector 229 of the path move to the energy accumulator 213 of the path. On the other hand, holes remain in the carrier output material 333 of the path outputting electrons as carriers. The holes move to the energy accumulator 213 in the path, where electrons and holes form a dipole. Electrons that reach the electron-absorbing collector 229 of the outbound path move to the energy accumulator 213 of the outbound path, and there is little disturbance of the path of electrons approaching the electron-absorbing collector 229 of the outward path. The hole also moves from the carrier output material 333 of the path to the energy accumulator 213 of the path, where electrons and holes form a dipole, so that the positive charges held by the hole flow from the carrier output material 333 of the path to the path of the path. It is a feature of the power generating apparatus of the present invention that little or no disturbance of the action of electrons moving to the channel forming material 335 is achieved. In the preceding power generation device, electrons and holes remain in the original material and obstruct the movement of subsequent carriers, and therefore, it is difficult to realize high efficiency power generation.

The emitted electrons accelerate and collide with the electron-absorbing collector 229 of the path, so that the temperature of the electron-absorbing collector 229 of the path is raised. The temperature of the path-absorbing electron absorption collector 229 rises, and thermal energy is conducted to the carrier output material 334 into the return path via the path-conductor 123 of the path. Thus, the kinetic energy of the electrons in the carrier output material 334 to the return increases so that the number of electrons that are emitted in the return increases. That is, when the electron is accelerated and its kinetic energy increases, the kinetic energy is converted into thermal energy by the collision of the electrons, and the thermal energy increases the number of electrons that emit from the return path, so that the field effect power generation device of the thermal feedback method Since the generated energy is effectively used, power generation efficiency is improved.

In the electric field effect generator of the thermal feedback system shown in FIG. 82, the first power source 231 for the return, the second power source 232 for the return, the third power source 233 for the return, and the fourth power source 234 for the return I use it. As shown in the figure, a carrier output material 334 to the return, a channel forming material 336 to the return, and an electron absorption collector 230 to the return are disposed below the substrate 19. Graphene is used as an embodiment of the channel forming material 336 into the ear. The channel forming material 336 into the ear, which is graphene, is electrically connected to the carrier output material 334 into the ear. An insulator 8 is disposed on the bottom surface of the carrier output material 334 to the return, the channel forming material 336 to the return, and the electron absorption collector 230 to the return. On the lower surface of the insulator 8, the first electrode 261 of the carrier accelerator to the home, the second electrode 262 of the carrier accelerator to the home, the third electrode 263 of the carrier accelerator to the home and the carrier to the home The fourth electrode 264 of the acceleration device is disposed. The first electrode 261 of the carrier acceleration device back home acts as an injection electrode. The second electrode 262 of the carrier acceleration device back home and the third electrode 263 of the carrier acceleration device back home act as sliding electrodes. The fourth electrode 264 of the carrier acceleration device back home acts as an emission electrode and an acceleration electrode.

In the field effect power generation device of the thermal feedback system, it is possible to perform two kinds of operations, the return path and the return path. When the heat conduction 123 and the return heat conduction 124 of the return path is an insulator, the power generation of the return path and the return path are electrically insulated, so that both operate independently. Therefore, it is possible to simultaneously operate the development of the royal road and the return home, and the power generation efficiency is improved. When parallel power generation is realized by using an insulator as the thermal conductor 123 and the return thermal conductor 124 for the return path, insulating materials such as silicon dioxide, ceramics, mica and the like are used as examples of the insulator. When the heat conduction 123 and the heat return 124 of the return path are electrically conductive, it is necessary to switch between the development of the return path and the development of the return path in time, thus introducing the concept of mode. That is, in the mode 1, the forward path is developed, and in the mode 2, the return path is generated, and the field effect power generation is realized by switching them by an electronic switching operation.

In FIG. 82, the positive voltage terminal of the first power supply 231 to the return is electrically connected to the first electrode 261 of the carrier acceleration device to the return. The negative voltage terminal of the first power source 231 to the return is electrically connected to the carrier output material 334 to the return. A first power source 231 is used to inject electrons that are carriers from the carrier output material 334 to the return channel into the channel forming material 336. The negative voltage terminal of the home power supply 232 is electrically connected to the first electrode 261 of the carrier accelerator home, and the positive voltage terminal of the home power supply 232 is connected to the carrier accelerator of the home. It is electrically connected to the second electrode 262. The negative voltage terminal of the third power source 233 to the home is electrically connected to the second electrode 262 of the carrier accelerator to the home, and the positive voltage terminal of the home power source of the third power source 233 to the home is It is electrically connected to the third electrode 263. The negative voltage terminal of the fourth power source 234 to the home is electrically connected to the third electrode 263 of the carrier accelerator to the home, and the positive voltage terminal of the fourth power source 234 to the home is connected to the carrier accelerator of the home It is electrically connected to the fourth electrode 264.

Between the first electrode 261 of the carrier acceleration device to which the positive voltage of the return power source 231 is applied and the carrier output material 334 to the return to which the negative voltage of the first power supply 231 is returned. An electric field is generated, and electrons which are carriers from the carrier output material 334 to the ear are injected into the channel forming material 336 into the ear by the action of the electric field. The first electrode 261 of the carrier acceleration device back home acts as an injection electrode. At this time, a potential barrier between the return carrier carrier material 334 and the return channel forming material 336 occurs between the first electrode 261 of the carrier accelerator and the return carrier carrier material 334. The electron passes through the tunnel effect due to the electric field. The first electrode 261 of the carrier acceleration device back home also acts as a tunnel electrode. The injected electrons move in the acceleration channel 9. The injected electrons are formed by the first electrode 261 of the carrier accelerator back home, the second electrode 262 of the carrier accelerator back home, the third electrode 263 of the carrier accelerator back home and the carrier accelerator of the home back. The electric field generated by the positive voltage applied to the four electrodes 264 is accelerated in the acceleration channel 9 to increase the kinetic energy of the electrons. Electrons with large kinetic energy arrive at the irreversible process generator 4 and are emitted from the channel forming material 336 back home. The second electrode 262 of the carrier acceleration device back home and the third electrode 263 of the carrier acceleration device back home act as sliding electrodes. The fourth electrode 264 of the carrier acceleration device back home acts as an emission electrode. At this time, a potential barrier corresponding to the work function between the channel forming material 336 and the vacuum passes back through the tunneling effect by the generated electric field, and electrons are emitted in the vacuum. The emitted electrons fly between the insulator 8 and the substrate 19 and reach the electron-absorbing collector 230 back to the ear. Electrons that reach the electron-absorbing collector 230 back home travel to the energy accumulator 214 back home. On the other hand, holes remain in the carrier output material 334 to the ears which output the electrons as carriers. Holes travel to the energy accumulator 214 back home, where electrons and holes form a dipole. Electrons that reach the electron-absorbing collector 230 to the ear move to the energy accumulator 214 to the ear, and since electrons remain little in the electron-absorbing collector 230 to the ear, the electron-absorbing collector 230 subsequently is returned. Few hinder the course of electrons approaching. The holes also move from the carrier output material 334 to the ear to the energy accumulator 214 to the ear, where the electrons and holes form a dipole, so that the positive charge retained by the holes from the carrier output material 334 to the ear It is a feature of the power generating apparatus of the present invention that little is obstructed in the movement of electrons moving to the channel forming material 336, and good power generation is carried out. In the preceding power generation device, electrons and holes remain in the original material, in the preceding power generation device, electrons and holes remain in the raw material, and subsequent motion of the carriers is hindered, thus making it difficult to achieve high efficiency power generation.

The emitted electrons are accelerated and collide with the electron-absorbing collector 230 back, so that the temperature of the electron-absorbing collector 230 back. The temperature of the electron-absorbing collector 230 in the return rises and thermal energy is conducted to the carrier output material 333 in the return path via the heat conduction 124 in the return. Thus, the kinetic energy of electrons in the carrier output material 333 of the path increases so that the number of electrons that are emitted in the path increases. That is, when the electron is accelerated and its kinetic energy increases, the kinetic energy is converted into thermal energy by the collision of the electrons, and the thermal energy increases the number of electrons that emit in the path. Since the generated energy is effectively used, power generation efficiency is improved. That is, when the electron is accelerated and its kinetic energy increases, the kinetic energy is converted into thermal energy by the collision of electrons, and the thermal energy increases the number of emission of electrons in the next path. The temperature of the electron-absorbing collector 229 in the back rises due to the collision of the emitted electrons in the back, and the temperature of the electron-absorbing collector 230 in the back rises due to the collision of the emitted electrons in the back. The number of electrons picked up increases, and the power generation efficiency of the field effect generator of the thermal feedback method is improved. In practice, if the temperature rise of the path-absorbing electron absorption collector 229 and the return-electron absorbing collector 230 is significantly increased, the durability of the device is lost. Long term use of the device is possible.

[Fifteenth Embodiment of the Invention]

FIG. 83 is a sectional view of the mode 1 state when the alternating power generation system is adopted in the field effect generator according to the fifteenth embodiment of the present invention. In the field effect generator of the alternating power generation system, the first power source 31, the second power source 32, the third power source 33, the fourth power source 34, the fifth power source 35, and the sixth power source ( 36, the seventh power source 37 and the eighth power source 38 are connected to the electrodes of the carrier accelerator as in the case of FIG. 79, but their display is omitted in the drawing. As shown in FIG. 83, the channel forming material 2 and the electron absorption collector 26 are disposed on the surface of the substrate 19. An insulator 8 is disposed on the upper surface of the channel forming material 2 and the electron absorbing collector 26. Graphene is used for both the channel forming material 2 and the electron absorption collector 26. The graphene channel forming material 2 and the carrier output material 1 are electrically connected. However, when the channel forming material 2 is carbon-based graphene, it is necessary to apply a special bonding method for electrically connecting the carrier output material 1 and the channel forming material 2. That is, when titanium is used as an example of the carrier output material 1, the electrical connection is favorably performed with the carbon-based channel forming material 2 at 1100 degrees C. In the electric field generator of the alternating power generation method of the present invention, the carrier output material 1 is heated by switching modes, and the temperature becomes high, so that the carrier output material 1 and the channel forming material 2 are electrically connected in a high temperature state. Good power generation efficiency is obtained. The electron absorption collector 26 which is graphene and the collector 24 are electrically connected.

In the field effect generator of the alternating power generation system, there are mode 1 and mode 2. Switching between the mode 1 and the mode 2 is performed using the start switch 101 of the mode 1 and the start switch 102 of the mode 2. The start switch 101 of the mode 1 and the start switch 102 of the mode 2 are connected to each other between the power supply and the electrode of the carrier accelerator as in the case shown in FIG. 79, but their display is omitted in FIG. 83. In FIG. 83, the positive voltage terminal of the first power supply 31 is electrically connected to the first electrode 61 of the carrier accelerator. The negative voltage terminal of the first power source 31 is electrically connected to the carrier output material 1 via the initiation switch 101 of the mode 1. A first power source 31 is used to inject electrons that are carriers from the carrier input and output material 1 into the channel forming material 2. The first electrode 61 of the carrier accelerator acts as an injection electrode. The negative voltage terminal of the second power supply 32 is electrically connected to the first electrode 61 of the carrier accelerator, and the positive voltage terminal of the second power supply 32 is electrically connected to the second electrode 62 of the carrier accelerator. Is connected. The negative voltage terminal of the third power source 33 is electrically connected to the second electrode 62 of the carrier accelerator, and the positive voltage terminal of the third power source 33 is electrically connected to the third electrode 63 of the carrier accelerator. Is connected. The negative voltage terminal of the fourth power source 34 is electrically connected to the third electrode 63 of the carrier accelerator, and the positive voltage terminal of the fourth power source 34 is electrically connected to the fourth electrode 64 of the carrier accelerator. Is connected. The second electrode 62 of the carrier accelerator, the third electrode 63 of the carrier accelerator and the fourth electrode 64 of the carrier accelerator serve as sliding electrodes. The negative voltage terminal of the fifth power source 35 is electrically connected to the fourth electrode 64 of the carrier accelerator, and the positive voltage terminal of the fifth power source 35 is electrically connected to the eighth electrode 68 of the carrier accelerator. Is connected. The negative voltage terminal of the sixth power source 36 is electrically connected to the eighth electrode 68 of the carrier accelerator, and the positive voltage terminal of the sixth power source 36 is electrically connected to the seventh electrode 67 of the carrier accelerator. Is connected. The negative voltage terminal of the seventh power source 37 is electrically connected to the seventh electrode 67 of the carrier accelerator, and the positive voltage terminal of the seventh power source 37 is electrically connected to the sixth electrode 66 of the carrier accelerator. Is connected. The negative voltage terminal of the eighth power source 38 is electrically connected to the sixth electrode 66 of the carrier accelerator, and the positive voltage terminal of the eighth power source 38 is electrically connected to the fifth electrode 65 of the carrier accelerator. Is connected. The eighth electrode 68 of the carrier accelerator, the seventh electrode 67 of the carrier accelerator, the sixth electrode 66 of the carrier accelerator and the fifth electrode 65 of the carrier accelerator are an emission electrode and an accelerator electrode. Act as. In the mode 1 of the field effect generation, the start switch 101 of the mode 1 is in a conducting state, and the start switch 102 of the mode 2 is in a nonconducting state. The carrier output material 1 is conductive and usually metal is used. An electric field is generated between the first electrode 61 of the carrier acceleration device to which the positive voltage is applied and the carrier output material 1 to which the negative voltage is applied, and electrons which are carriers from the carrier output material 1 by the action of the electric field. Is injected into the channel forming material 2. At this time, the potential barrier between the carrier output material 1 and the channel forming material 2 is formed by the tunnel effect by the electric field generated between the first electrode 61 and the carrier output material 1 of the carrier accelerator. Passes through. The first electrode 61 of the carrier accelerator acts as a tunnel electrode. The injected electrons move in the acceleration channel 9. The injected electrons are first electrode 61 of the carrier accelerator, second electrode 62 of the carrier accelerator, third electrode 63 of the carrier accelerator, fourth electrode 64 of the carrier accelerator, carrier acceleration. An electric field generated by a positive voltage applied to the eighth electrode 68 of the apparatus, the seventh electrode 67 of the carrier accelerator, the sixth electrode 66 of the carrier accelerator, and the fifth electrode 65 of the carrier accelerator. This accelerates in the acceleration channel 9 and increases the kinetic energy of the electrons. First electrode 61 of carrier accelerator, fourth electrode 64 of carrier accelerator, eighth electrode 68 of carrier accelerator, seventh electrode 67 of carrier accelerator, sixth of carrier accelerator The electrode 66 and the fifth electrode 65 of the carrier accelerator act as an emission electrode and an acceleration electrode. Electrons having a large kinetic energy arrive at the irreversible process generator 4 and are emitted from the channel forming material 2. At this time, a potential barrier corresponding to the work function between the channel forming material 2 and the vacuum passes through the generated electric field based on the tunnel effect, and electrons are emitted in the vacuum. The emitted electrons fly between the insulator 8 and the substrate 19 to reach the electron absorption collector 26 and finally to the collector 24. Electrons that reach the collector 24 move to the energy accumulator 115 in mode 1. On the other hand, holes remain in the carrier output material 1 which outputs electrons which are carriers. The holes move to the energy accumulator 115 in mode 1, where electrons and holes form a dipole. The electrons reaching the collector 24 move to the energy accumulator 115 in mode 1, and since there are very few electrons remaining in the collector 24, it is almost impossible to obstruct the path of electrons subsequently approaching the collector 24. none. The hole also moves from the carrier output material 1 to the energy accumulator 115 in mode 1, where the electrons and holes form a dipole, so that the positive charge held by the holes is transferred from the carrier output material 1 to the channel forming material 2 It is almost a feature of the power generation apparatus of the present invention that there is almost no disturbance of the movement of electrons moving to), and good power generation is performed. In the preceding power generation device, electrons and holes remain in the original material and obstruct the movement of subsequent carriers, and therefore, it is difficult to realize high efficiency power generation. The emitted electrons are accelerated and collide with the electron absorption collector 26, so that the temperature of the electron absorption collector 26 rises. When the temperature of the electron absorption collector 26 rises, the kinetic energy of electrons therein increases, so when switched to mode 2, the number of electrons to be emitted increases. That is, when electrons are accelerated and their kinetic energy increases, the kinetic energy is converted into thermal energy by the collision of electrons, and the thermal energy increases the number of electrons that emit in the next mode, so the field effect generation device of the alternating power generation method Since all generated energy is effectively used, power generation efficiency is improved.

In mode 2 of the field effect generation, the start switch 101 of mode 1 is in a non-conductive state, and the start switch 102 of mode 2 is in a conductive state. In the field effect generator of the alternating power generation method of the mode 2, the first power source 31, the second power source 32, the third power source 33, the fourth power source 34, the fifth power source 35, and the fifth power source are used as power sources. The sixth power source 36, the seventh power source 37, and the eighth power source 38 are connected to the electrodes of the carrier accelerator as in the case shown in Fig. 79, but these are omitted in the figure.

84 is a cross-sectional view of the state of the mode 2 when the alternating power generation method is adopted in the field effect generator according to the fifteenth embodiment of the present invention. In this figure, the positive voltage terminal of the first power source 31 is electrically connected to the fifth electrode 65 of the carrier accelerator. The negative voltage terminal of the first power source 31 is electrically connected to the carrier output material 1 via the initiation switch 102 in mode 2. A first power source 31 is used to inject electrons that are carriers from the carrier input and output material 1 into the channel forming material 2. The fifth electrode 65 of the carrier accelerator acts as an injection electrode for injecting electrons from the carrier input and output material 1 into the channel forming material 2. The negative voltage terminal of the second power source 32 is electrically connected to the fifth electrode 65 of the carrier accelerator, and the positive voltage terminal of the second power source 32 is electrically connected to the sixth electrode 66 of the carrier accelerator. Is connected. The negative voltage terminal of the third power source 33 is electrically connected to the sixth electrode 66 of the carrier accelerator, and the positive voltage terminal of the third power source 33 is electrically connected to the seventh electrode 67 of the carrier accelerator. Is connected. The negative voltage terminal of the fourth power source 34 is electrically connected to the seventh electrode 67 of the carrier accelerator, and the positive voltage terminal of the fourth power source 34 is electrically connected to the eighth electrode 68 of the carrier accelerator. Is connected. The negative voltage terminal of the fifth power source 35 is electrically connected to the eighth electrode 68 of the carrier accelerator. The sixth electrode 66 of the carrier accelerator, the seventh electrode 67 of the carrier accelerator, and the eighth electrode 68 of the carrier accelerator serve as sliding electrodes. The positive voltage terminal of the fifth power source 35 is electrically connected to the fourth electrode 64 of the carrier accelerator. The negative voltage terminal of the sixth power source 36 is electrically connected to the fourth electrode 64 of the carrier accelerator, and the positive voltage terminal of the sixth power source 36 is electrically connected to the third electrode 63 of the carrier accelerator. Is connected. The negative voltage terminal of the seventh power source 37 is electrically connected to the third electrode 63 of the carrier accelerator, and the positive voltage terminal of the seventh power source 37 is electrically connected to the second electrode 62 of the carrier accelerator. Is connected. The negative voltage terminal of the eighth power source 38 is electrically connected to the second electrode 62 of the carrier accelerator, and the positive voltage terminal of the eighth power source 38 is electrically connected to the first electrode 61 of the carrier accelerator. Is connected.

The fourth electrode 64 of the carrier accelerator, the third electrode 63 of the carrier accelerator, the second electrode 62 of the carrier accelerator and the first electrode 61 of the carrier accelerator are an emission electrode and an accelerator electrode. Act as. In the mode 2 of the field effect generation, the start switch 102 of the mode 2 is in a conducting state, and the start switch 101 of the mode 1 is in a nonconducting state. The carrier output material 1 is conductive and usually metal is used. The channel forming material 2 and the electron absorbing collector 26 are disposed on the surface of the substrate 19. Graphene is used for the channel forming material 2 and the electron absorption collector 26. The graphene channel forming material 2 and the carrier output material 1 are electrically connected. However, when the channel forming material 2 is carbon-based graphene, it is necessary to apply a special bonding method for electrically connecting the carrier output material 1 and the channel forming material 2. That is, when titanium is used as an example of the carrier output material 1, the electrical connection is favorably performed with the carbon-based channel forming material 2 at 1100 degrees C. In the electric field generator of the alternating power generation method of the present invention, the carrier output material 1 is heated by switching modes, and the temperature becomes high, so that the carrier output material 1 and the channel forming material 2 are electrically connected in a high temperature state. Good power generation efficiency is obtained. The electron absorption collector 26 which is graphene and the collector 24 are electrically connected.

An electric field is generated between the first electrode 61 of the carrier acceleration device to which the positive voltage is applied and the carrier output material 1 to which the negative voltage is applied, and electrons which are carriers from the carrier output material 1 by the action of the electric field. Is injected into the channel forming material 2. At this time, the potential barrier between the carrier output material 1 and the channel forming material 2 is formed by the tunnel effect by the electric field generated between the first electrode 61 and the carrier output material 1 of the carrier accelerator. Passes through. The first electrode 61 of the carrier accelerator acts as a tunnel electrode. The injected electrons move in the acceleration channel 9. The injected electrons include the fifth electrode 65 of the carrier accelerator, the sixth electrode 66 of the carrier accelerator, the seventh electrode 67 of the carrier accelerator, the eighth electrode 68 of the carrier accelerator, and the carrier accelerator. An electric field generated by a positive voltage applied to the fourth electrode 64 of the device, the third electrode 63 of the carrier accelerator, the second electrode 62 of the carrier accelerator, and the first electrode 61 of the carrier accelerator. Is accelerated in the acceleration channel 9 to increase the kinetic energy of the electrons. Electrons having a large kinetic energy arrive at the irreversible process generator 4 and are emitted from the channel forming material 2. At this time, a potential barrier corresponding to the work function between the channel forming material 2 and the vacuum passes through the generated electric field based on the tunnel effect, and electrons are emitted in the vacuum. The emitted electrons fly between the insulator 8 and the substrate 19 to reach the electron absorption collector 26 and finally to the collector 24.

Electrons that reach the collector 24 move to the energy accumulator 116 in mode 2. On the other hand, holes remain in the carrier output material 1 which outputs electrons which are carriers. The holes move to the energy accumulator 116 in mode 2, where electrons and holes form a dipole. The electrons arriving at the collector 24 travel to the energy accumulator 116 in mode 2, and since there are very few electrons remaining in the collector 24, it is almost impossible to obstruct the path of electrons subsequently approaching the collector 24. none. The hole also moves from the carrier output material 1 to the energy accumulator 116 in mode 2, where the electrons and holes form a dipole, so that the positive charges held by the holes from the carrier output material 1 to the tunnel forming material 2 It is a feature of the power generating apparatus of the present invention that there is almost no disturbance of the action of the electrons moving to), and good power generation is performed. In the preceding power generation device, electrons and holes remain in the raw material and obstruct the movement of subsequent carriers, which makes it difficult to realize high efficiency power generation.

The emitted electrons are accelerated and collide with the electron absorption collector 26, so that the temperature of the electron absorption collector 26 rises. When the temperature of the electron absorption collector 26 rises, the kinetic energy held by the electrons in the electron absorption collector 26 increases, so when switching from mode 2 to mode 1, the number of electrons to be emitted increases. That is, when the electron is accelerated and its kinetic energy increases, the kinetic energy is converted into thermal energy by the collision of electrons, and the thermal energy increases the number of emission of electrons in the next mode. By repeating Mode 1 and Mode 2, the number of electrons to be emitted increases, and the power generation efficiency of the field effect power generation device of the alternating power generation system is improved. In practice, if the temperature rise of the electron absorption collector 26 becomes significantly large, the durability of the device is lost, so that the conduction periods of the start switch 101 in mode 1 and the start switch 102 in mode 2 are adjusted to an optimum temperature for the device. By setting, the field effect generator is used for a long time.

[16th Embodiment of the Present Invention]

FIG. 85 is a sectional view when the four-stage thermal feedback method is adopted in the field effect generator according to the sixteenth embodiment of the present invention. In the figure, four power generation units are arranged to maintain a rotation angle of 90 degrees. Four power generation units are represented by the same reference numerals in corresponding parts. The emitted electrons collide with one of the four electron absorption collectors 26. The electron-absorbing collector 26 with which electrons collided is sequentially heated in the rotational direction of the clock. Since the operations of the four power generation units are all the same, a description will be given by paying attention to the power generation unit described in the upper left of FIG. 85.

The substrate 19 shown in FIG. 85 is insulating. That is, the board | substrate 19 is created using insulators, such as a silicon dioxide. The carrier output material 1 and the channel forming material 2 are disposed on the substrate 19. The carrier output material 1 is a conductive material, and specific examples thereof include titanium, nickel, copper, gold and silver. The insulator 8 is disposed on the channel forming material 2, and the first electrode 61 of the carrier accelerator, the second electrode 62 of the carrier accelerator, and the third of the carrier accelerator are disposed on the channel 8. The electrode 63, the fourth electrode 64 of the carrier accelerator and the fifth electrode 65 of the carrier accelerator are arranged. The case where graphene is used as the channel formation material 2 is shown. When carbon atoms are chemically bonded by sp2 hybrid orbits, carbon hexagonal nets bonded two-dimensionally are formed. The aggregate of carbon atoms with this planar structure is called graphene. Graphene having a structure in which carbon atoms are arranged in an eye shape of a hexagonal net forms one layer of graphite, and multilayer graphene is laminated to form the whole graphite. In graphene, six-membered rings of carbon are bonded in a planar shape, thickness is an order of molecules, and electrical conductivity is very good in the planar direction. That is, the mobility of the electrons in the graphene is very large, reaches 200,000 cm 2 / Vs, and the electrons move in a planar shape from the six-membered ring of carbon to the six-membered ring with little resistance. As shown in FIG. 75, the first power source 31, the second power source 32, the third power source 33, the fourth power source 34, and the fifth power source 35 are used. Is not described. The negative voltage terminal of the first power source 31 is electrically connected to the carrier output material 1, and the positive voltage terminal of the first power source 31 is electrically connected to the first electrode 61 of the carrier accelerator. A first power source 31 is used to inject electrons that are carriers from the carrier input and output material 1 into the channel forming material 2. The negative voltage terminal of the second power supply 32 is electrically connected to the first electrode 61 of the carrier accelerator, and the positive voltage terminal of the second power source 32 is electrically connected to the second electrode 62 of the carrier accelerator. Is connected. The negative voltage terminal of the third power source 33 is electrically connected to the second electrode 62 of the carrier accelerator, and the positive voltage terminal of the third power source 33 is electrically connected to the third electrode 63 of the carrier accelerator. Is connected. The negative voltage terminal of the fourth power source 34 is electrically connected to the third electrode 63 of the carrier accelerator, and the positive voltage terminal of the fourth power source 34 is electrically connected to the fourth electrode 64 of the carrier accelerator. Is connected. The negative voltage terminal of the fifth power source 35 is electrically connected to the fourth electrode 64 of the carrier accelerator, and the positive voltage terminal of the fifth power source 35 is electrically connected to the fifth electrode 65 of the carrier accelerator. Is connected.

The electric field is formed by the positive voltage applied from the first power supply 31 to the first electrode 61 of the carrier accelerator and the negative voltage applied to the carrier output material 1. Electrons as carriers are injected from the carrier output material 1 into the graphene channel forming material 2 by the electric field effect formed in the direction of the carrier output material 1 from the first electrode 61 of the carrier accelerator. The first electrode 61 of the carrier accelerator acts as an injection electrode. The injected electrons are caused by the positive voltage applied to the first electrode 61 of the carrier accelerator, the second electrode 62 of the carrier accelerator and the third electrode 63 of the carrier accelerator in the acceleration channel 9. Accelerates. The second electrode 62 of the carrier accelerator and the third electrode 63 of the carrier accelerator serve as sliding electrodes in which electrons accelerate and move the surface of the graphene. The fourth electrode 64 of the carrier accelerator and the fifth electrode 65 of the carrier accelerator are also disposed among the insulators 8 in the lower part, and voltages are applied from the power supply to these electrodes as well. The electrons acquire a sufficiently large kinetic energy by moving the electrons at high speed on the surface of the channel forming material 2 which is graphene. The accelerated electrons deviate from the surface of the channel forming material 2 and are emitted in vacuum. The fourth electrode 64 of the carrier accelerator acts as an emission electrode. At the time of emission, electrons pass through the potential barrier, which is the irreversible process generating unit 4, by the quantum mechanical tunnel effect. The emitted electrons are accelerated by the positive voltage applied to the fifth electrode 65 of the carrier accelerator. That is, the fifth electrode 65 of the carrier acceleration device acts as an acceleration electrode. When the flying electrons are accelerated and their kinetic energy becomes sufficiently large, they overcome the repulsive force according to Coulomb's law received from the electron absorption collector 26, collide with the electron absorption collector 26 and are collected thereon. As shown in FIG. 50, the electron absorption collector 26 is electrically connected to one terminal of the energy accumulator 15, but the energy accumulator is omitted in FIG. Electrons that reach the electron absorption collector 26 reach one terminal of the energy accumulator 15. Holes remaining in the carrier output material 1 reach the other terminal of the energy accumulator 15, and holes and electrons form a pair in the energy accumulator 15 and accumulate there. If one terminal of the electrical load 5 is connected to one terminal of the energy accumulator 15 and the other terminal of the electrical load 5 is connected to the other terminal of the energy accumulator 15, the energy accumulator ( Holes and electrons accumulated in 15 arrive at the electrical load 5 and recombine there, and both are extinguished, and electrical energy is supplied to the electrical load 5 in this process.

In FIG. 85, the electron absorption collector 26 uses a material having good thermal conductivity. The electron absorption collector 26 is bonded to the substrate 19 in a good state of thermal conductivity. As the substrate 19, an insulating material such as mica or silicon dioxide is used, and the thickness thereof is very thin. The carrier output material 1 and the channel forming material 2 both use materials having good thermal conductivity. Both the carrier output material 1 and the channel forming material 2 are connected to the substrate 19 in a good state of thermal conductivity. Since the flying electrons accelerate and collide with the electron absorption collector 26, the temperature of the electron absorption collector 26 rises. The thermal energy supplied to the electron absorption collector 26 is well conducted to the substrate 19. The thermal energy of the substrate 19 brought to a high temperature is conducted from the substrate 19 to the carrier output material 1 and the channel forming material 2 so that the temperature of the carrier output material 1 and the channel forming material 2 rises. do. The electrons emitted from the first power generation unit shown in the upper left of FIG. 85 raise the temperature of the carrier output material 1 and the channel forming material 2 of the second power generation unit shown in the upper right of the figure. The kinetic energy possessed by the electrons in the carrier output material 1 and the channel forming material 2 of the second power generation unit is increased. In other words, pre-supply of energy is carried out to the carrier output material 1 and the channel forming material 2 of the second power generation unit. As the kinetic energy held by the electrons in the carrier output material 1 and the channel forming material 2 of the second power generation unit becomes larger, the number of electrons emitted from the channel forming material 2 increases.

The circulation of thermal energy described above is sequentially repeated to the first power generation unit, the second power generation unit, the third power generation unit, and the fourth power generation unit, thereby gradually increasing the number of electrons that are emitted from each tunnel forming material 2. . The optimum number of emission electrons is determined in consideration of the durability of the device and the power generation efficiency. To this end, the voltage value of the power source supplied from the outside is controlled so that the power generation output is in an optimal state. In the electric field generating apparatus described above, the number of electrons contributing to power generation is increased by accelerating the emitted electrons and increasing the kinetic energy to increase the temperature of the electron absorption collector 26. That is, since the thermal energy generated by the collision of electrons is used in feedback to the power generation phenomenon, the power generation efficiency is very good, and the practicality is increased. The electric energy obtained from the electric field electric power generating device is a source of electric field effect on electrons, and since it hardly supplies other energy from the outside, it can be said to be a power generating device different from the conventional energy converter.

The present invention can solve the environmental problems caused by the burning of fossil energy by performing efficient power generation by using the electric field effect, solve the problem of exhaustion of fossil energy, and stably supply the energy necessary for the long-term survival of mankind.

1 carrier output material 2 channel forming material
3: carrier acceleration device 4: irreversible process generating unit
5: electrical load 8: insulator
9: acceleration channel 10: P-type semiconductor
11 N-type semiconductor 13: negative charge storage conductor
14 positive charge accumulator conductor 15 energy accumulator
16: positive charge input and output unit 17: negative charge input and output unit
19: substrate 20: potential barrier generating unit
22: emission 23: surface movement of the carrier
24: collector 25: suppressor
26: electron absorption collector 27: hole absorption collector
28: carrier absorption collector 30: power
31: first power supply 32: second power supply
33: third power source 34: fourth power source
35: fifth power source 36: sixth power source
37: seventh power source 38: eighth power source
39: ninth power source 40: tenth power source
41: positive electrode of the carrier accelerator 42: negative electrode of the carrier accelerator
43: power positive voltage terminal 44: power negative voltage terminal
49: hole 50: electron
60 electrode of carrier accelerator 61 first electrode of carrier accelerator
62: second electrode of carrier accelerator 63: third electrode of carrier accelerator
64: fourth electrode of the carrier accelerator 65: fifth electrode of the carrier accelerator
66: sixth electrode of the carrier accelerator 67: seventh electrode of the carrier accelerator
68: eighth electrode of the carrier accelerator 69: ninth electrode of the carrier accelerator
70 tenth electrode of the carrier accelerator 71 carrier absorbing graphene
72 carrier release graphene 73 carrier absorbing substrate
74 carrier carrier substrate 75 sub-nanometer material
76: carbon-based material 80: secondary electron emission member
81: Coulomb force acting on a carrier 82: Synthetic vector
90 carrier carrier deflection power supply 91 carrier track deflection positive electrode
92: carrier orbital deflection negative electrode 93: carrier orbital deflection N stimulus
94: carrier orbital deflection S stimulus 101: start switch of mode 1
102: start switch of mode 2 105: emitter of the first stage
106: second stage emitter 107: carrier output material of the royal road
108: carrier output material to the return 111: energy accumulator of the first stage
112: energy accumulator of second stage 113: energy accumulator of third stage
115: energy accumulator in mode 1 116: energy accumulator in mode 2
120: thermal conductivity of mode 1 121: thermal conductivity of mode 2
123: thermal conductivity of the royal road 124: thermal conductivity of the return home
126: thermal energy supply
127: electron absorption collector of the first stage
128: electron absorption collector of the second stage
129: electron absorption collector of the third stage
131: carrier output material of the first stage
132: carrier output material of the second stage
133: carrier output material of the third stage
211: energy accumulator of the first stage back home
212: energy accumulator of the second stage back home
213: Energy Accumulator of the Royal Road
214: Energy accumulators for the return
226: heat energy supply
227: electron absorption collector of the first stage
228: electron absorption collector of the second stage
229: Electron Absorption Collector
230: Electron Absorber Collector
231: the first power of return
232: second power to the return
233: Third Power of Return
234: Fourth Power of Return
235: the fifth power of return
236: sixth power of the return home
261: first electrode of the carrier accelerator to the return
262: second electrode of the carrier acceleration device back home
263: third electrode of the carrier accelerator to the return
264: fourth electrode of the carrier acceleration device back home
265: fifth electrode of the carrier accelerator to the return
266: sixth electrode of the carrier accelerator to the return
300: vacuum vessel
331: carrier output material of the first stage to the return
332: carrier output material of the second stage to the return
333: Carrier output material of the royal road
334: carrier output material to the ear
335: channel forming material
336: channel forming material into the ear
350: switch
351: switch

Claims (15)

Carrier output material, channel forming material, electrode of carrier accelerator, insulator, irreversible process generator, acceleration channel, energy accumulator, carrier absorbing collector and electrical load,
The carrier output material and the channel forming material are electrically connected so that an insulator is disposed on a part of the surface of the channel forming material, an electrode of the carrier accelerator is disposed in the insulator, and an acceleration channel is formed on the surface of the insulator side of the channel forming material. A portion is formed, and a carrier present in the carrier output material is injected from the carrier output material into the channel forming material by the electric field effect generated by the electrode of the carrier accelerator,
The carrier injected into the channel forming material is accelerated by an electric field effect by an electrode of the carrier accelerator in the acceleration channel, so that the entire supply of energy is performed to the carrier, and the carrier passes through the irreversible process generator and the carrier The carrier collected by the absorption collector and absorbed by the carrier absorption collector is input to one input terminal of the energy accumulator, and the anti-carrier remaining in the carrier output material is input to the other input terminal of the energy accumulator. The carrier and the anti-carrier form a pair, accumulate in the energy accumulator, electrically connect the energy accumulator with the electrical load, and move the carrier and the anti-carrier to the electrical load. To supply electrical energy to the electrical load The field effect power generation device of the gong. The method of claim 1,
The carrier accelerator includes a plurality of power sources and a plurality of electrodes, the electrodes of the carrier accelerator are electrically connected to the power source, and the electrodes of the plurality of carrier accelerators are disposed through an insulator around the channel forming material. Thereby forming an acceleration channel, injecting a carrier from the carrier output material to the channel forming material by the action of the electrode of the carrier acceleration device in the acceleration channel, and accelerating the injected carrier to provide full supply of energy to the carrier. The field effect electric power generation apparatus characterized by the above-mentioned. The method of claim 1,
A P-type semiconductor and an N-type semiconductor are used as the carrier output material, and an N-type semiconductor and a P-type semiconductor are used as the channel forming material. The method of claim 1,
The irreversible process generating unit comprises an insulator and a vacuum. Carrier output material, channel forming material, carrier accelerator, irreversible process generator, acceleration channel, energy accumulator, electron absorption collector and electrical load,
The carrier accelerator acts on the electrons in the carrier output material such that the electrons are injected from the carrier output material through the irreversible process generator and injected into the channel forming material, and the electrons injected into the channel forming material are accelerated. The electrons are moved to a channel, and the electrons are accelerated by the action of the carrier accelerator in the acceleration channel to supply energy to the electrons so that the electrons are passed through the irreversible process generating unit and are emitted in a vacuum. Is collected in the electron absorbing collector, and electrons collected in the electron absorbing collector are input to one input terminal of the energy accumulator, and holes remaining in the carrier output material are input to the other input terminal of the energy accumulator. And the electron and the hole form a pair And accumulate in the energy accumulator, electrically connect the energy accumulator with the electrical load, and supply electrical energy to the electrical load by supplying the electrons and holes to the electrical load. Device. 6. The method according to claim 1 or 5,
The next emission is performed by converting a part of the kinetic energy of the electrons accelerated by the action of the carrier accelerator into electrical, electromagnetic and thermal energy, and feeding the energy back to the electron to be subjected to the next emission. And supplying electric energy to the electrical load by supplying a part of the energy to an electron to be scheduled. The method according to claim 6,
In order to provide the feedback of the energy, an electric field is generated by using a part of the electric and electromagnetic energy, and a part of the energy is supplied to the electrons to be subjected to the next emission by the action of the generated electric field. Field effect power generation device. The method according to claim 6,
In order to provide the feedback of the energy, a magnetic field is generated by using a part of electrical and electromagnetic energy, and a part of the energy is supplied to the electrons to be subjected to the next emission by the action of the generated magnetic field. Field effect power generation device. The method of claim 5, wherein
And a suppressor arranged around the carrier absorption collector. The method of claim 5, wherein
And increasing the number of electrons output by irradiating the carrier output material and the channel forming material with electromagnetic waves, electrons, and photons exhibiting quantum mechanical wave characteristics. The method of claim 5, wherein
And a secondary electron emission member on a front surface or a portion of the surface of the channel forming material. The method of claim 5, wherein
And a deflection electrode and a deflection stimulus for deflecting the trajectory of the emitted electrons. The method of claim 5, wherein
And a heat conductor, wherein heat energy generated in the electron absorption collector is supplied to the carrier output material and the channel forming material via a heat conductor to be supplied to the electrons. The method of claim 5, wherein
The channel forming material is a carbon-based material, and the field effect power generation device, characterized in that the sub-nanometer material disposed on the surface of the carbon-based material. The method of claim 5, wherein
An output voltage is controlled by controlling the voltage of the power supply used for the said carrier acceleration device.

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