KR20120078001A - Multilayer transparent electrode and method for manufacturing the same - Google Patents
Multilayer transparent electrode and method for manufacturing the same Download PDFInfo
- Publication number
- KR20120078001A KR20120078001A KR1020100140155A KR20100140155A KR20120078001A KR 20120078001 A KR20120078001 A KR 20120078001A KR 1020100140155 A KR1020100140155 A KR 1020100140155A KR 20100140155 A KR20100140155 A KR 20100140155A KR 20120078001 A KR20120078001 A KR 20120078001A
- Authority
- KR
- South Korea
- Prior art keywords
- titanium oxide
- layer
- oxide layer
- copper
- target
- Prior art date
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/043—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B17/00—Insulators or insulating bodies characterised by their form
- H01B17/56—Insulating bodies
- H01B17/62—Insulating-layers or insulating-films on metal bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
Abstract
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to transparent electrodes used in various optoelectronic devices, and more particularly, to a multilayer transparent electrode based on inexpensive titanium oxide material and a method of manufacturing the same.
Along with the high-tech information technology industry, the renewable energy industry is rapidly rising, and interest in transparent electrode materials having both electrical conductivity and light transmission is increasing. Flat panel display products and thin-film solar cells must transmit light through a thin transparent substrate and at the same time have excellent electrical conductivity.
As a transparent electrode material, a transparent conductive oxide (TCO) manufactured in the form of a thin film is typical. Transparent conductive oxide is a generic term for oxide-based degenerate semiconductor electrodes having both high optical transmittance (more than 85%) and low resistivity (1 × 10 -3 Ω · cm) in the visible region. As a result, it is used as a core electrode material for functional thin films such as antistatic films and electromagnetic shielding, flat panel displays, solar cells, touch panels, transparent transistors, flexible photoelectric devices, and transparent photoelectric devices.
Currently, indium tin oxide (hereinafter referred to as "ITO") doped with 10 wt% tin oxide indium oxide as a transparent oxide electrode is representative. The ITO electrode can transmit 90% or more of the light in the visible region, exhibits very transparent properties, and has a low specific resistance (10 -3 to 10 -4 ? Cm), and thus is widely used in various photoelectric devices.
The core of the flat panel display, solar cell, touch panel, transparent transistor, flexible optoelectronics, and transparent optoelectronics businesses is to secure cost competitiveness by reducing production costs. However, indium, which is used as a core material of ITO, is rapidly increasing its price due to the limitation of reserves and the rapid growth of the photovoltaic device business. In addition, ITO has disadvantages such as vulnerability to hydrogen plasma, lack of flexibility, and difficulty in application to flexible substrates due to high temperature processes. For this reason, researches have been actively conducted to find a material for replacing an ITO transparent electrode.
SUMMARY OF THE INVENTION The present invention has been devised in view of this point, and an object of the present invention is to provide a multilayer transparent electrode based on a simple and inexpensive titanium oxide material and a manufacturing method thereof.
Multi-layered transparent electrode according to the present invention for achieving the above object, a titanium oxide layer made of titanium oxide (Ti-O) doped with a metal material, a copper layer in contact with the titanium oxide layer, the upper and lower surfaces of the copper layer It has a sandwich structure of 2n + 1 layer (n is an integer of 1 or more) in which the said titanium oxide layer was laminated | stacked.
The titanium oxide layer may be represented by the chemical formula of MxTiyOz (x, y, z = 0.01 to 10, M is any one of niobium (Nb), vanadium (V), tantalum (Ta)).
The copper layer may have a thickness of 8 to 14 nm.
The titanium oxide layer may have a thickness of 30 to 50 nm.
Method for manufacturing a multilayer transparent electrode according to the present invention for achieving the above object, the step of forming a titanium oxide layer made of titanium oxide doped with a metal material on a substrate, a copper layer on the titanium oxide layer of 8 ~ 14nm thickness And forming a titanium oxide layer made of titanium oxide doped with a metal material on the copper layer, wherein the upper and lower surfaces of the copper layer are covered with the titanium oxide layer. The titanium oxide layer and the copper layer are laminated so as to have a sandwich structure of the above integer).
The method for manufacturing a multilayer transparent electrode according to the present invention includes a substrate, a first sputter gun having a titanium oxide target doped with a metal material for forming the titanium oxide layer, and a copper target for forming the copper layer. Putting the prepared second sputter gun into the same vacuum chamber, and sequentially rotating the titanium oxide layer and the copper layer on the substrate using a continuous sputtering process of alternately operating the first and second sputter guns. Can be laminated.
In the method of manufacturing a multilayer transparent electrode according to the present invention, a film-type flexible substrate is used as the substrate, and a titanium oxide target doped with a metal material for forming the titanium oxide layer in the movement path of the flexible substrate is provided. A first sputter gun and a second sputter gun having a copper target for forming the copper layer are sequentially disposed to face the flexible substrate, and the first sputter gun and the second sputter gun are moved while moving the flexible substrate. The titanium oxide layer and the copper layer may be sequentially stacked on the flexible substrate by using a continuous roll-to-roll sputter process.
In the method of manufacturing a multilayer transparent electrode according to the present invention, the substrate, a titanium oxide target doped with a metal material for forming the titanium oxide layer, a copper target for forming the copper layer is placed in the same vacuum chamber, the oxidation The titanium target and the copper target are sequentially heated to evaporate the titanium oxide target and the copper target to sequentially deposit the vapor of the titanium oxide target and the vapor of the copper target on the substrate, using the continuous evaporation process. The titanium oxide layer and the copper layer may be sequentially stacked on a substrate.
In the method of manufacturing a multilayer transparent electrode according to the present invention, the substrate is placed in a vacuum chamber containing a titanium oxide target doped with a metal material for forming the titanium oxide layer to form a titanium oxide layer on the substrate, the titanium oxide The layered substrate is placed in another vacuum chamber containing a copper target for forming the copper layer, and a copper layer is formed on the titanium oxide layer, and the titanium oxide target in which the titanium oxide layer and the copper layer are sequentially stacked The titanium oxide layer and the copper layer may be sequentially stacked on the substrate using a batch type process in which a titanium oxide layer is deposited on the copper layer in a vacuum chamber.
The titanium oxide target may be doped with 6 wt% of niobium oxide (Nb 2 O 5 ) in titanium dioxide (TiO 2 ).
Multi-layered transparent electrode according to the present invention has excellent electrical and optical properties, flat panel display (LCD, AMOLED, E-ink, PDP, FED), solar cell (DSSC, OSC, CIGS), transparent TFT, touch panel, light emitting diode It can be used in various optoelectronic devices such as sensors. In addition, it is easy to bend due to the excellent ductility of the thin copper layer can be used in the transparent electrode of the optoelectronic device based on the flexible polymer substrate.
In addition, since the multilayer transparent electrode according to the present invention exhibits high transmittance and conductivity based on inexpensive titanium and copper, low cost optoelectronic devices can be realized and competitiveness can be given to various optoelectronic device industries.
1 illustrates that a multilayer transparent electrode according to an embodiment of the present invention is stacked on a substrate.
2 shows sheet resistance and specific resistance according to the thickness of a copper layer interposed between a titanium oxide layer made of titanium oxide doped with niobium.
Figure 3 shows the transmittance according to the thickness of the copper layer interposed between the titanium oxide layer made of titanium oxide doped with niobium.
Figure 4 shows the sheet resistance and resistivity according to the thickness of the copper layer interposed between the titanium oxide layer made of titanium oxide doped with tantalum.
5 shows the transmittance according to the thickness of the copper layer interposed between the titanium oxide layer made of titanium oxide doped with tantalum.
6 shows sheet resistance and specific resistance of a multilayer transparent electrode according to a thickness of a titanium oxide layer made of titanium oxide doped with niobium.
7 shows the transmittance of the multilayer transparent electrode according to the thickness of the titanium oxide layer made of titanium oxide doped with niobium.
8 shows an inclined dual target RF magnetron sputtering apparatus for a continuous sputter process.
9 shows a roll to roll sputtering apparatus for a continuous roll to roll sputtering process.
10 shows an evaporator for a continuous deposition process.
11 shows an apparatus for a batch type process.
Hereinafter, with reference to the accompanying drawings, it will be described in detail a multilayer transparent electrode and a method of manufacturing the same according to an embodiment of the present invention.
In describing the present invention, the sizes and shapes of the components shown in the drawings may be exaggerated or simplified for clarity and convenience of explanation. In addition, terms that are specifically defined in consideration of the configuration and operation of the present invention may vary depending on the intention or custom of the user or operator. These terms are to be construed in accordance with the meaning and concept consistent with the technical idea of the present invention based on the contents throughout the present specification.
1 illustrates that a multilayer transparent electrode according to an embodiment of the present invention is stacked on a substrate.
As shown in FIG. 1, the multilayer
Since the first
The first
Titanium oxide doped with a
2 and 3 illustrate sheet resistance according to the thickness of a
First, a lower NTO layer was formed on a
Through this sputtering process, a lower NTO layer (first titanium oxide layer) having a thickness of 30 nm was formed on the glass substrate. Next, a copper layer was formed on the lower NTO layer through a sputtering process. At this time, the
2, it can be seen that as the thickness of the copper layer increases, the electrical resistance is improved while the sheet resistance and the specific resistance decrease. And it can be seen from Figure 3 that the transmittance is high in the visible light region of 400 ~ 600nm, it can be seen that the transmittance decreases as the thickness of the copper layer increases.
4 and 5 show the sheet resistance, resistivity and transmittance according to the thickness of the copper layer interposed between the titanium oxide layer made of titanium oxide (Ta: TiO 2 ) doped with tantalum. These results were obtained by forming a multilayer transparent electrode using a slanted dual target RF magnetron sputtering device as shown in FIG. 8, but varying the thickness of the copper layer to 6 nm, 8 nm, 10 nm, 12 nm, and 14 nm. In forming the multilayer transparent electrode, the remaining sputtering conditions except for using a titanium oxide target doped with titanium oxide (6wt% Ta 2 O 5 doped TiO 2 ) are the same as described above, Omit.
Referring to FIG. 4, it can be seen that, as with the result of using niobium, as the thickness of the copper layer increases, the electrical properties are improved while the sheet resistance and the specific resistance decrease. 5, the transmittance decreases as the thickness of the copper layer increases, but it can be seen that most of them appear in the visible light region of 400 to 600 nm.
Niobium and tantalum used in the formation of the titanium oxide layer in the test example are
When combining these test data, it is preferable that the multilayer
6 and 7 illustrate sheet resistance, specific resistance, and transmittance of the multilayer transparent electrode according to the thickness of the NTO layer (the first titanium oxide layer and the second titanium oxide layer) of the multilayer transparent electrode having the NTO / Cu / NTO structure. will be. This result is to form a multilayer transparent electrode using a sloped dual target RF magnetron sputtering device as shown in Figure 8, the thickness of the copper (Cu) layer to 12nm and the thickness of the
6, it can be seen that as the thickness of the NTO layer increases, sheet resistance and specific resistance increase. This is because the resistance of the NTO layer is high, the overall resistance of the multilayer transparent electrode increases as the thickness increases. In the transmittance shown in FIG. 7, as the thickness of the NTO layer increases, the transmittance decreases again after increasing in the wavelength range of 550 nm or less, and the trend tends to increase constantly in the wavelength range of 550 nm or more.
To sum up these results, it is not appropriate that the thickness of the NTO layer is larger than 50 nm because the transparent electrode for application to the optoelectronic device is mostly required to have a low resistance. Since the thickness of the NTO layer shows the highest transmittance at about 30 to 50 nm, the thickness of the NTO layer (the first titanium oxide layer and the second titanium oxide layer) in the multilayer transparent electrode according to the present invention is 30 to 50 nm. It is good to have.
In the above, the multilayer transparent electrode according to the present invention has been described as having a three-layer structure of a first titanium oxide layer / copper layer / second titanium oxide layer, as shown in FIG. The structure is not limited to this three-layer structure. That is, the multi-layered transparent electrode according to the present invention includes at least one pair of titanium oxide layers and at least one copper layer, and a variety of 2n + 1 layers (n is an integer of 1 or more) each having a titanium oxide layer stacked on top and bottom of the copper layer. It may have a multi-stack structure.
As described above, the multilayer
Meanwhile, the multilayer transparent electrode according to the present invention is manufactured through the following continuous sputtering process, continuous roll-to-roll sputtering process, continuous evaporation process, and batch type process. Can be. Of course, the multilayer transparent electrode according to the present invention may be manufactured through various film forming processes in addition to the following manufacturing process.
First, a continuous sputtering process will be described with reference to the inclined dual target RF magnetron sputtering apparatus shown in FIG. 8.
The
Using this continuous sputtering process, the
Hereinafter, a continuous roll-to-roll sputtering process will be described with reference to the roll-to-roll sputtering apparatus shown in FIG. 9.
In order to use such a continuous roll-to-roll sputtering process, a film-shaped
First, the
This continuous roll-to-roll process is characterized in that the titanium oxide layer (11) (13) and the copper layer (13) on the
Hereinafter, a continuous deposition process will be described with reference to the evaporator illustrated in FIG. 10.
In the case of using the continuous deposition process, the
Hereinafter, a batch type process will be described with reference to an apparatus for the batch type process illustrated in FIG. 11.
The batch type process is a method of forming a thin film by performing a deposition process step by step in each
This batch type process can be used independently of the chamber for each target to prevent contamination by other targets, and can be used by connecting a variety of chambers to the central chamber, so that not only sputter process but also various deposition process such as deposition process You can proceed at once.
Embodiments of the present invention described above and illustrated in the drawings should not be construed as limiting the technical idea of the present invention. The scope of protection of the present invention is limited only by the matters described in the claims, and those skilled in the art can improve and modify the technical idea of the present invention in various forms. Accordingly, these modifications and variations are intended to fall within the scope of the present invention as long as it is obvious to those skilled in the art.
10: multilayer
12
30
32, 33, 35, 36, 37: sputter gun 42: ion gun
Claims (13)
And a copper layer in contact with the titanium oxide layer.
And a sandwich structure of a 2n + 1 layer (n is an integer of 1 or more) in which the titanium oxide layer is stacked on upper and lower surfaces of the copper layer.
The titanium oxide layer is MxTiyOz (x, y, z = 0.01 ~ 10, M is a multi-layer transparent electrode, characterized in that represented by the formula of niobium (Nb), vanadium (V), tantalum (Ta)) .
The thickness of the copper layer is a multilayer transparent electrode, characterized in that 8 ~ 14nm.
The thickness of the titanium oxide layer is a multilayer transparent electrode, characterized in that 30 ~ 50nm.
Forming a copper layer on the titanium oxide layer to a thickness of 8 to 14 nm; And
Forming a titanium oxide layer made of titanium oxide doped with a metal material on the copper layer;
The titanium oxide layer and the copper layer are laminated so that the upper and lower surfaces of the copper layer are covered with the titanium oxide layer to form a sandwich structure of 2n + 1 layers (n is an integer of 1 or more) as a whole. .
The titanium oxide layer is MxTiyOz (x, y, z = 0.01 ~ 10, M is a multi-layer transparent electrode, characterized in that represented by the chemical formula of niobium (Nb), vanadium (V), tantalum (Ta)) Manufacturing method.
The copper layer is formed in a thickness of 8 to 14nm manufacturing method of the multilayer transparent electrode.
The titanium oxide layer is formed in a thickness of 30 ~ 50nm manufacturing method of a multilayer transparent electrode.
Into the substrate, a first sputter gun having a titanium oxide target doped with a metal material for forming the titanium oxide layer, a second sputter gun having a copper target for forming the copper layer is placed in the same vacuum chamber, The titanium oxide layer and the copper layer are sequentially stacked on the substrate using a continuous sputtering process of alternately operating the first sputter gun and the second sputter gun. .
A first sputter gun and a copper layer for forming a copper layer using a film-type flexible substrate as the substrate, and a titanium oxide target doped with a metal material for forming the titanium oxide layer in a movement path of the flexible substrate. A continuous roll-to-roll for arranging a second sputter gun with a copper target in order to face the flexible substrate and actuating the first sputter gun and the second sputter gun while moving the flexible substrate; and sequentially stacking the titanium oxide layer and the copper layer on the flexible substrate using a sputter process.
The substrate, the titanium oxide target doped with a metal material for forming the titanium oxide layer, and the copper target for forming the copper layer are placed in the same vacuum chamber, and the titanium oxide target and the copper target are sequentially heated to oxidize the oxide. The titanium oxide layer and the copper layer are sequentially on the substrate using a continuous evaporation process in which a vapor of the titanium oxide target and vapor of the copper target are sequentially deposited on the substrate by evaporating the titanium target and the copper target. Method for producing a multilayer transparent electrode, characterized in that the lamination.
The substrate is placed in a vacuum chamber containing a titanium oxide target doped with a metal material for forming the titanium oxide layer, and a titanium oxide layer is formed on the substrate. The substrate on which the titanium oxide layer is laminated is deposited on the copper layer. Into another vacuum chamber containing a copper target for depositing a copper layer on the titanium oxide layer, the titanium oxide layer and a copper layer in a vacuum chamber containing the titanium oxide target stacked in this order, the titanium oxide layer on the copper layer And sequentially depositing the titanium oxide layer and the copper layer on the substrate using a batch type process of forming a film.
The titanium oxide target is a method of manufacturing a multilayer transparent electrode, characterized in that the titanium dioxide (TiO 2 ) doped with niobium oxide (Nb 2 O 5 ) 6wt%.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20100140155A KR101273798B1 (en) | 2010-12-31 | 2010-12-31 | Multilayer transparent electrode and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20100140155A KR101273798B1 (en) | 2010-12-31 | 2010-12-31 | Multilayer transparent electrode and method for manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20120078001A true KR20120078001A (en) | 2012-07-10 |
KR101273798B1 KR101273798B1 (en) | 2013-06-11 |
Family
ID=46711410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR20100140155A KR101273798B1 (en) | 2010-12-31 | 2010-12-31 | Multilayer transparent electrode and method for manufacturing the same |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR101273798B1 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150094808A (en) * | 2014-02-10 | 2015-08-20 | 삼성디스플레이 주식회사 | Touch panels and method of manufacturing a touch panel |
KR20160029311A (en) * | 2014-09-05 | 2016-03-15 | 주식회사 디케이티 | Metal mesh of touch panel and method for manufcture of thereoff |
KR20160069364A (en) * | 2014-12-08 | 2016-06-16 | 삼성전자주식회사 | Electrically conductive thin films |
KR101707330B1 (en) * | 2015-10-21 | 2017-02-16 | 고려대학교 산학협력단 | Transparent electrode with oxide/metal/oxide multilayered structure and method for preparing the same |
WO2017034078A1 (en) * | 2015-08-26 | 2017-03-02 | 고려대학교 산학협력단 | Flexible transparent electrode having tio2/ag/tio2 multi-layered thin film structure, and method for manufacturing same |
KR101838277B1 (en) * | 2016-12-23 | 2018-03-14 | 한국과학기술원 | Titanium oxide film for bolometer use and method thereof, infrared detector using titanium oxide film |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101700884B1 (en) | 2015-02-04 | 2017-02-01 | 한국과학기술연구원 | Maganese tin oxide Transparent Conducting Oxide and transparent conductive film using the same and method for fabricating transparent conductive film |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090169879A1 (en) * | 2007-12-31 | 2009-07-02 | 3M Innovative Properties Company | Corrosion resistant multi-layer window film construction |
-
2010
- 2010-12-31 KR KR20100140155A patent/KR101273798B1/en not_active IP Right Cessation
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150094808A (en) * | 2014-02-10 | 2015-08-20 | 삼성디스플레이 주식회사 | Touch panels and method of manufacturing a touch panel |
KR20160029311A (en) * | 2014-09-05 | 2016-03-15 | 주식회사 디케이티 | Metal mesh of touch panel and method for manufcture of thereoff |
KR20160069364A (en) * | 2014-12-08 | 2016-06-16 | 삼성전자주식회사 | Electrically conductive thin films |
WO2017034078A1 (en) * | 2015-08-26 | 2017-03-02 | 고려대학교 산학협력단 | Flexible transparent electrode having tio2/ag/tio2 multi-layered thin film structure, and method for manufacturing same |
KR101707330B1 (en) * | 2015-10-21 | 2017-02-16 | 고려대학교 산학협력단 | Transparent electrode with oxide/metal/oxide multilayered structure and method for preparing the same |
KR101838277B1 (en) * | 2016-12-23 | 2018-03-14 | 한국과학기술원 | Titanium oxide film for bolometer use and method thereof, infrared detector using titanium oxide film |
Also Published As
Publication number | Publication date |
---|---|
KR101273798B1 (en) | 2013-06-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101273798B1 (en) | Multilayer transparent electrode and method for manufacturing the same | |
Kim et al. | Design of a MoOx/Au/MoOx transparent electrode for high-performance OLEDs | |
US20150279498A1 (en) | Transparent conductive thin film electrodes, electronic devices and methods of producing the same | |
KR20150093835A (en) | Improved silver based conductive layer for flexible electronics | |
Lee et al. | High-performance ZnO: Ga/Ag/ZnO: Ga multilayered transparent electrodes targeting large-scale perovskite solar cells | |
Seok et al. | Roll-to-roll sputtered, indium-free ZnSnO/AgPdCu/ZnSnO multi-stacked electrodes for high performance flexible thin-film heaters and heat-shielding films | |
KR20150039373A (en) | Transparent electode and electronic device comprising the same | |
US9704610B2 (en) | Manganese tin oxide based transparent conducting oxide and transparent conductive film and method for fabricating transparent conductive film using the same | |
Zhu et al. | Highly transparent conductive F-doped SnO2 films prepared on polymer substrate by radio frequency reactive magnetron sputtering | |
Han et al. | Indium-free Cu/fluorine doped ZnO composite transparent conductive electrodes with stretchable and flexible performance on poly (ethylene terephthalate) substrate | |
KR20150135977A (en) | Transparent electode and electronic device comprising the same | |
WO2015125558A1 (en) | Method for manufacturing transparent electroconductive body and electroconductive body | |
KR101832521B1 (en) | Transparent electode and electronic device comprising the same | |
Lee et al. | Highly transparent and flexible TiN doped In2O3 (ITON)/Ag-Ti/ITON multilayer electrodes coated on polyethylene terephthalate substrate | |
Raman et al. | Inverted organic photovoltaics using highly transparent and flexible InGaON/AgTi/InGaON multilayer electrodes | |
KR101816972B1 (en) | Transparent electrode with TiO2/Ag/TiO2 multilayered structure and method for preparing the same | |
KR102010240B1 (en) | Anti-reflection film with water repelling properties and Method of Manufacturing The Same | |
KR20140090876A (en) | Flexible Multilayer Transparent Eletrode | |
Kim | The structural and optoelectrical properties of TiON/Au/TiON multilayer films | |
Schmidt et al. | Highly transparent and conductive ZTO/Ag/ZTO multilayer top electrodes for large area organic solar cells | |
EP4207325A1 (en) | Display device and manufacturing method therefor | |
KR20170135781A (en) | Anti-reflection film with water repelling properties and Method of Manufacturing The Same | |
JP2012206381A (en) | Transparent gas barrier film, method of forming transparent gas barrier film, organic electroluminescence element, solar battery, and thin film battery | |
KR20140039399A (en) | Touch screen with improved transmittance by forming anti-reflection and low-reflection coating layer | |
JP5892789B2 (en) | Transparent gas barrier film, method for producing transparent gas barrier film, organic EL device, solar cell and thin film battery |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20160518 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20170327 Year of fee payment: 5 |
|
LAPS | Lapse due to unpaid annual fee |