KR20120076940A - Organic light emitting device and manufacturing method thereof - Google Patents

Abstract

PURPOSE: An organic light-emitting device and a manufacturing method thereof are provided to extend lifetime by obtaining high photonic efficiency without applying a high current to an organic light-emitting diode. CONSTITUTION: A plurality of TFTs and a capacitor are formed on a glass substrate(110). An optical reflection partition wall(200) is formed in order to protect two or more sides among four sides of the exterior of a light emission region. A bank(130) covers the optical reflection partition wall. An organic light-emitting diode(120) generates colored light of specific waves according to organic materials. The organic light-emitting diode comprises a first electrode(122), a light-emitting layer(124), and a second electrode(126).

Description

Organic light emitting device and manufacturing method {ORGANIC LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF}

The present invention relates to an organic light emitting device, and more particularly, to an organic light emitting device capable of improving luminous efficiency and a method of manufacturing the same.

As a flat panel display device, a liquid crystal display device has been widely used until now, but recently, a light emitting display device having excellent luminous efficiency, luminance, viewing angle, and fast response speed has been attracting attention.

The liquid crystal display requires a backlight as a separate light source, and there are technical limitations in brightness, contrast ratio, and viewing angle. As a result, self-light emission is possible, and a separate light source is not required, and interest in organic light emitting devices that are relatively excellent in brightness, contrast ratio, and viewing angle is increasing.

The organic light emitting diode (OLED) is a structure in which a light emitting layer is formed between a cathode for injecting electrons and an anode for injecting holes, and holes generated from electrons and anodes generated from the cathode When injected into the light emitting layer, the injected electrons and holes combine to generate an exciton, and the generated exciton falls from the excited state to the ground state to cause light emission.

The organic light emitting device is a display device that displays an image by controlling the driving of a plurality of pixels in which organic light emitting diodes displaying intrinsic color light are formed according to a wavelength, that is, controlling the light emission of the organic light emitting diodes of each pixel.

Such an organic light emitting device may be classified into a passive matrix method and an active matrix method according to a driving method.

The passive matrix method is a configuration in which pixels are arranged in a matrix form without a separate thin film transistor (hereinafter, referred to as TFT), and each line is driven by sequential driving of a scanning line. The more this is, the higher the voltage and current must be applied instantaneously. Therefore, power consumption increases and there is a limit in resolution.

On the other hand, the active matrix method is a configuration in which TFTs are formed in each of the pixels arranged in a matrix form, and each pixel is driven by switching driving of the TFTs and voltage charging of the storage capacitor Cst, so power consumption is low and resolution is low. In terms of advantages, there is an advantage over the passive matrix method. Accordingly, an active matrix organic light emitting device is suitable for a display device requiring high resolution and a large area.

Hereinafter, an organic light emitting device of an active matrix type according to the prior art will be described with reference to the drawings. For reference, in the present specification, the 'active matrix organic light emitting device' will be referred to simply as an 'organic light emitting device'.

1 is a view briefly showing an emission area of an organic light emitting device according to the prior art. 1 illustrates only a light emitting region of one pixel of an organic light emitting diode according to the related art.

Referring to FIG. 1, an organic light emitting device according to the related art includes a light emitting region in which an organic light emitting diode 10 (OLED) generating light is formed, and an array region in which a plurality of TFTs are formed to drive the organic light emitting diode 10. (Not shown).

The array region includes a gate line (or a scan line), a data line, a driving power line (VDD line), a plurality of switching TFTs, a drive TFT, and a capacitor (C).

The organic light emitting diode 10 formed in the emission region is formed on the glass substrate 20 of a transparent material, and includes a first electrode 11 for injecting a hole; A second electrode 13 for injecting electrons; And a light emitting layer 12 which emits light by using a current formed and applied between the first electrode 11 and the second electrode 13.

Here, about 80% of the light generated by the waveguide and total reflection in the organic light emitting diode 10 is lost, and only about 20% of the light is emitted to the outside.

Specifically, due to the difference in refractive index between the light emitting layer 12 formed of an organic material, the second electrode 13 formed of a transparent electrode such as ITO, and the glass substrate 20, the Snell may be formed at a predetermined angle or more through each layer. Snell's low causes total reflection of light so that it is not emitted to the outside.

Accordingly, the organic light emitting device according to the related art does not emit about 80% of the light generated from the light emitting layer 12, and finally, only about 20% of the light is emitted to the outside, resulting in low light efficiency. . Such a decrease in luminous efficiency causes a decrease in display quality of the organic light emitting device.

In order to increase the light efficiency of the organic light emitting device, a method of applying a high current to the organic light emitting diode or adding a material that improves the light emitting efficiency has been proposed. However, this shortens the lifespan of the organic light emitting device and increases power consumption due to driving. There is another problem that is not a preferred alternative for improving the luminous efficiency.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problems, and an object of the present invention is to provide an organic light emitting device capable of increasing light efficiency and a method of manufacturing the same.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problems, and an object thereof is to provide an organic light emitting device capable of improving display quality and a method of manufacturing the same.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problems, and an object of the present invention is to provide an organic light emitting device and a method of manufacturing the same, which can reduce power consumption due to light emission.

Other features and advantages of the invention will be set forth in the description which follows, or may be obvious to those skilled in the art from the description and the claims.

According to an aspect of the present invention, there is provided an organic light emitting device including: a light reflection barrier formed on a glass substrate to surround at least two of four surfaces of an outer surface of an emission area; A bank formed to cover the light reflection partition wall and insulating the light reflection partition wall; And an organic light emitting diode in which a first electrode, a light emitting layer, and a second electrode are sequentially formed in the light emitting region on the glass substrate, wherein the light reflection barrier is generated by the organic light emitting diode, and then wave guided and totally reflected light. It is characterized by reflecting to the outside.

The light reflection barrier of the organic light emitting diode according to an exemplary embodiment of the present invention is formed of a photosensitive metal paste containing silver (Ag).

The light reflection barrier of the organic light emitting device according to the embodiment of the present invention is formed of a photosensitive metal paste in which inorganic metal powder, glass frit, and fumed silica are mixed.

The light reflection barrier of the organic light emitting device according to the embodiment of the present invention is characterized by having a light reflection efficiency of 95% or more.

The light reflection barrier of the organic light emitting diode according to the embodiment of the present invention is formed in a stripe shape to surround both sides of the organic light emitting diode.

According to an aspect of the present invention, there is provided a method of manufacturing an organic light emitting device, including: applying a photosensitive metal paste on a glass substrate, and then patterning the light reflecting barrier rib to cover at least two of four outer surfaces of the emission area; Forming a bank to insulate the light reflection barrier by applying an insulating material to cover the light reflection barrier; And sequentially forming a first electrode, a light emitting layer, and a second electrode in the light emitting region on the glass substrate to form an organic light emitting diode, wherein the light reflection barrier is generated from the organic light emitting diode, and then wave It is characterized by reflecting the guide and the totally reflected light to the outside.

In the method of manufacturing an organic light emitting device according to an embodiment of the present invention, after applying a photosensitive metal paste containing silver (Ag) on the glass substrate, a photolithography process, a baking process, and a strip process are performed to perform the light It is characterized by forming a reflective partition.

In the method of manufacturing an organic light emitting device according to the embodiment of the present invention, the photosensitive metal paste may further include an inorganic metal powder, glass frit, and fumed silica.

In the method of manufacturing an organic light emitting device according to an embodiment of the present invention, the photosensitive metal paste further comprises an acrylic binder polymer, a cellulose-based binder polymer, a photoinitiator, a multifunctional monolayer and a multifunctional oligomer. do.

The present invention according to the embodiment can provide an organic light emitting device and a manufacturing method thereof that can increase the light efficiency.

The present invention according to the embodiment can provide an organic light emitting device and a manufacturing method thereof that can improve the display quality.

The present invention according to the embodiment can provide an organic light emitting device and a method of manufacturing the same that can reduce the power consumption according to the light emission.

According to the embodiment of the present invention, the lifespan of the organic light emitting device can be extended.

The present invention according to the embodiment can simplify the manufacturing process of the organic light emitting device.

Other features and effects of the present invention may be newly understood through the embodiments of the present invention in addition to the features and effects of the present invention mentioned above.

1 is a view schematically showing a light emitting region of an organic light emitting device according to the prior art.
2 is a plan view illustrating an organic light emitting device according to an exemplary embodiment of the present invention.
3 is a cross-sectional view taken along the line A1-A2 shown in FIG. 2, showing a light emitting area.
4 is a view showing the light reflectance of the light reflection partition according to an embodiment of the present invention.
5 is a view illustrating that light generated in an OLED is reflected through a light reflection barrier of an organic light emitting diode according to an exemplary embodiment of the present invention.
6 is a view illustrating light efficiency of an organic light emitting device according to an exemplary embodiment of the present invention.
7 illustrates an organic light emitting device according to another embodiment of the present invention.
8 to 12 are views showing a method of manufacturing an organic light emitting device according to an embodiment of the present invention.

Hereinafter, an organic light emitting device and a method of manufacturing the same according to an exemplary embodiment will be described with reference to the accompanying drawings.

The present invention mainly includes a light reflection partition formed outside the light emitting region in order to increase the efficiency of light generated by the organic light emitting diode (OLED), and a manufacturing method of forming the light reflection partition. Therefore, illustration and detailed description of the array region in which the plurality of TFTs are formed except for the light emitting region will be omitted.

2 is a plan view illustrating an organic light emitting device according to an exemplary embodiment of the present invention, and FIG. 3 is a cross-sectional view taken along the line A1-A2 of FIG. Only the emission region of one pixel of the organic light emitting diode according to an exemplary embodiment of the present invention is illustrated.

In FIG. 2 and FIG. 3 and the detailed description with reference thereto, the first electrode 122 has been described as being formed directly on the back plan part 110. However, the present invention focuses on the organic light emitting diode 120 (OLED). To illustrate, the drawings and the description thereof will be briefly described. A passivation layer (PAS layer) may be formed on the glass substrate 110, and the first electrode 112 may be formed on the passivation layer.

2 and 3 and the detailed description with reference thereto, the light generated in the organic light emitting diode 120 (OLED) is illustrated and described based on a bottom emission method, which is one of the present inventions. It shows an embodiment of. The organic light emitting device according to the embodiment of the present invention may be equally applied to the method in which the light generated from the organic light emitting diode 120 is emitted to the top. The organic light emitting device includes a gate line, an EM (light emitting signal) line, a data line, a driving power line (VDD line), a reference power line (Vref line), and a plurality of back planar parts 110 on the glass substrate. The switching TFT, the drive TFT, and the capacitor Cst are formed.

In the organic light emitting device according to the exemplary embodiment of the present invention, some TFTs of the plurality of switching TFTs and the drive TFTs may be formed under the organic light emitting diode 120.

2 and 3, an organic light emitting diode device according to an embodiment of the present invention includes a light emitting region 100 in which an organic light emitting diode 120 (OLED) is formed to generate color light having a specific wavelength according to an organic material; A light reflection barrier 200 formed to surround the emission area to reflect light generated by the organic light emitting diode 120 (OLED); And an array region 300 in which a plurality of switching TFTs, drive TFTs, and capacitors for driving the organic light emitting diodes 120 (OLED) are formed.

As shown in FIG. 3, the organic light emitting diode 120 (OLED) includes a first electrode 122, a light emitting layer 124, and a second electrode 126 sequentially formed on the back planar part 110 made of a transparent material. Has a structure.

The first electrode 122 may be formed of a transparent electrode formed of a conductive transparent material such as indium tin oxide (ITO) so that light generated in the emission layer 124 may be emitted to the outside via the back plan part 110. have.

 In this case, the back planar unit 110 has a refractive index of 1.5 and the first electrode 122 is formed to have a refractive index of 1.8 when formed of ITO.

The emission layer 124 is formed of an organic material, and generates color light having a specific wavelength according to an inherent property of the organic material by using currents applied through the first electrode 122 and the second electrode 126. In this case, the light emitting layer 124 is formed to have a refractive index of 1.7. Although not shown in the drawing, the first electrode 122 is connected to the electrode of the drive TFT through a separately formed contact.

The second electrode 126 is a metal material having high light reflecting properties to increase the efficiency of the light generated in the light emitting layer 124. For example, the second electrode 126 is formed of aluminum to apply charge or pores to the light emitting layer 124. The function and the reflective layer may have a function together.

Here, when the first electrode 122 is formed of an anode for injecting holes into the light emitting layer 124, the second electrode 126 is formed of a cathode for injecting electrons into the light emitting layer 124. However, the present invention is not limited thereto, and the roles of the first electrode 122 and the second electrode 126 may be interchanged.

The light reflection barrier 200 formed of a material having high light reflection efficiency, such as silver (Ag, argentums), is formed outside the organic light emitting diode 120 (OLED) having the above-described configuration. For example, as illustrated in FIG. 2, the light reflection barrier 200 may be formed in a stripe shape to surround two of four surfaces of the organic light emitting diode 120 (OLED).

Here, the light reflection barrier 200 may be formed using a mixture of silver (Ag: argentums) having high light reflection efficiency and an inorganic metal powder and glass frit that increase adhesion to the back plan portion 110. It may be covered by the bank 130 and insulated from the organic light emitting diode 120 (OLED).

In this case, the height of the light reflection barrier 200 may be the same as the height of the organic light emitting diode 120 (OLED) or higher than the height of the organic light emitting diode 120 (OLED). In addition, the light reflection barrier 200 is formed to a thickness that can prevent light transmission, and there is no particular limitation on the thickness.

Referring to FIG. 4, the light reflection efficiency of the light reflection barrier 200 according to the embodiment of the present invention is tested, and the result is illustrated.

As a result of experiments on the light reflection efficiency of the light reflection partition 200, the light of the light emitting layer 124 having a refractive index of 1.7, the first electrode 122 having a refractive index of 1.8, and the back planar portion 110 having a refractive index of 1.5 It was confirmed that the light reflection efficiency of more than 95% on the path.

The bank 130 is formed to cover the light reflection barrier 200 and a part of the array region, and is formed using polyimide as an example of an insulating material that is highly resistant to high temperature, friction, and chemicals. Since the bank 130 is formed to cover the light reflection barrier 200, the light reflection barrier 200 and the organic light emitting diode 120 (OLED) are insulated from each other.

An electrode line 140 extending from a contact of an array region is formed on the second electrode 126 of the organic light emitting diode 120 (OLED), and the second electrode 126 injects electrons into the light emitting layer 124. When formed as the electrode line 140 is formed as an extended cathode line connected to the cathode contact of the array region.

In the organic light emitting device according to the exemplary embodiment of the present invention including the above-described configuration, the light reflecting partitions 200 are formed on both sides of the outer side of the organic light emitting diode 120 to generate light, which is illustrated in FIG. 5. As described above, due to the difference in refractive index of each layer, the light that is totally reflected by the wave guided light and the snell by the law is emitted to the outside of the back plan part 110.

Referring to FIG. 6, an organic light emitting diode device according to an exemplary embodiment of the present invention is generated by an organic light emitting diode 120 (OLED) by light reflecting partitions 200 formed on both sides of the organic light emitting diode 120 (OLED). It can be confirmed that the efficiency of the light emitted to the outside of the back plan unit 110 is improved.

As described with reference to FIG. 1, the organic light emitting device according to the related art has a light efficiency of about 19%.

In comparison with the related art, the organic light emitting device according to the embodiment of the present invention forms the light reflection barrier 200 to emit 99.7% of the light generated from the light emitting layer 124 to the first electrode 122. 97.9% of the light incident on the electrode 122 may be emitted to the back plan unit 110.

40.7% of the light incident on the back plan part 110 was emitted to the air and finally, 39.7% of the light efficiency was obtained. As such, the efficiency of light generated by the organic light emitting diodes 120 and OLED may be improved, thereby improving display quality of the organic light emitting device.

In addition, when the organic light emitting device according to the embodiment of the present invention looks at the light efficiency in relation to the power consumption, it is possible to obtain a higher light efficiency with a smaller power consumption than the prior art, and consequently to reduce the power consumption of the organic light emitting device. It can provide an effect that can be made. In addition, high light efficiency can be obtained without applying a high current to the organic light emitting diode 120 (OLED), thereby extending the life of the organic light emitting device.

In the above description with reference to FIG. 2, the light reflection barrier 200 is formed in a stripe shape to surround two of four surfaces of the organic light emitting diode 120, that is, the light emitting region 100. One embodiment of the is shown.

In another embodiment of the present invention, as shown in FIG. 7, the light reflection barrier 200 may be formed to surround all four surfaces of the organic light emitting diode 120 (that is, the OLED).

As shown in FIG. 7, when the light reflection barrier 200 is formed to surround all four surfaces of the emission region 100, the light reflection efficiency of the light generated by the organic light emitting diodes 120 and OLED is further increased. The light efficiency of the organic light emitting device can be higher than the aforementioned 39.7%.

In the above description, the light generated by the organic light emitting diode 120 (OLED) is illustrated and described on the basis of a bottom emission method, but this is one embodiment of the present invention.

The organic light emitting diode device according to another embodiment of the present invention may include a method in which light generated from the organic light emitting diode 120 (OLED) is emitted to the top.

8 to 12 illustrate a method of manufacturing an organic light emitting diode according to an exemplary embodiment of the present invention.

Hereinafter, a method of manufacturing an organic light emitting diode device according to an exemplary embodiment of the present invention will be described with reference to FIGS. 8 to 12.

As shown in FIG. 8 (a), after depositing a partition paste including a mixture of silver (Ag: argentums) having high light reflection efficiency, inorganic metal powder, and glass frit, the mask is applied to the back planar unit 110. The paste is patterned by using the photolithography process to form the light reflection barrier 200.

Here, the light reflection barrier 200 may be formed in a stripe shape so as to surround two of four surfaces of the organic light emitting diodes 120 (OLED) formed in the process described below in the outer portion of the light emitting region. Meanwhile, the light reflection barrier 200 may be formed to surround all four surfaces of the organic light emitting diode 120 (OLED) at an outer portion of the emission area.

Subsequently, as shown in FIG. 8B, the bank 130 is formed to cover the light reflection barrier 200 and a portion of the array region outside the light emitting region.

Here, the bank 130 is an insulating material having a high durability against high temperature, friction, and chemicals, and is formed using polyimide, and the light reflecting partition 200 is formed due to the bank 130 being formed. Is insulated from the organic light emitting diode 120 (OLED).

9 to 11, a method of forming the light reflection barrier 200 will be described in detail.

First, in order to manufacture a paste used as a material of the light reflection barrier 200, as shown in FIG. 9, a first mixing process S10 of mixing inorganic metal powder and glass frit with fumed silica is performed. At this time, the inorganic metal powder, glass frit and fumed silica are mixed using ball milling.

Herein, the inorganic metal powder and the glass frit are materials for increasing adhesion to the back plan part 110, and fumed silica is a material for enhancing photosensitivity during the photolithography process.

Subsequently, the first mixed inorganic metal powder, glass frit and fumed silica are heat-treated at a temperature of 100 ° C. to 150 ° C. (S20) to increase the bonding strength between the materials.

Subsequently, the inorganic metal powder, glass frit, and fumed silica, which have been heat-treated, are mixed by performing a second mixing process (S30). At this time, the inorganic metal powder, glass frit and fumed silica, which are heat-treated using a ball mill, are mixed.

Through this, an inorganic metal powder and glass frit surface-treated with fumed silica are prepared (S40).

For example, as shown in FIG. 10, the acrylic binder polymer and the cellulose binder polymer are melted using an organic solvent (S50). At this time, the organic solvent is put into the container contained in the binder polymer and the cellulose-based binder polymer, and then the container is rotated and melted.

Subsequently, the photoinitiator, the multifunctional monomer and the multifunctional oligomer are mixed, and an additive such as a lubricant or a surfactant is added thereto to prepare a photosensitive solution (S60).

Subsequently, the inorganic metal powder and glass frit prepared in S40, the binder polymer and cellulose binder polymer melted with an organic solvent in S50, and the photosensitive solution prepared in S60 are mixed, followed by mixing and grinding. Perform (S70).

By performing the manufacturing process as described above, a barrier rib paste used as a material of the light reflection barrier 200 is manufactured (S80).

Subsequently, as shown in FIG. 11A, the partition paste 210 is coated on the back plan part 110 to have a thickness equal to or greater than the height of the organic light emitting diode 120 (OLED).

Thereafter, as shown in 11 (b), the barrier paste 210 of the region to form the light reflection barrier is calcined by performing an exposure process and a firing process using a patterned mask. At this time, the baking process of the partition paste 210 may be performed for 60 minutes to 200 minutes at a temperature of 400 ℃ ~ 700 ℃.

Subsequently, as shown in FIG. 11C, after removing the mask, the barrier rib paste is etched and stripped to form a light reflection barrier 200 by removing the remaining barrier rib paste, leaving only the baked portion.

Through the above-described manufacturing process, as shown in FIG. 8A, the light reflection barrier 200 having a predetermined height and thickness may be formed on the back plan part 110.

Here, the light reflection barrier 200 includes a material having high light reflection efficiency such as silver (Ag: argentums) to surround two of four surfaces of the organic light emitting diode 120 (OLED), as shown in FIG. 2. It may be formed in a stripe form so as to. In addition, the light reflection barrier 200 may be formed to surround all four surfaces of the OLED 120 (OLED), as shown in FIG. 7.

Subsequently, as shown in FIG. 12A, the first electrode 122 is formed by using a transparent conductive material such as ITO in the light emitting region on the back planar portion 110 where the light reflection barrier 200 and the bank 130 are formed. ).

Thereafter, an organic material is deposited on the first electrode 122 to form the emission layer 124.

Thereafter, the second electrode 126 is formed on the light emitting layer 124 using a metal material having high conductivity and light reflection efficiency such as aluminum to manufacture the organic light emitting diode 120 (OLED). In this case, the second electrode 126 is formed to have a function of the electrode and the reflective layer to apply a charge or a hole to the light emitting layer 124 together.

Here, when the first electrode 122 is formed of an anode for injecting holes into the light emitting layer 124, the second electrode 126 is formed of a cathode for injecting electrons into the light emitting layer 124. However, the present invention is not limited thereto, and the roles of the first electrode 122 and the second electrode 126 may be interchanged.

Next, as shown in FIG. 12B, an electrode line 140 extending from the contacts of the array region is formed on the second electrode 126. In this case, when the second electrode 126 is formed as a cathode for injecting electrons into the light emitting layer 124, the electrode line 140 is formed as an extended cathode line connected to the cathode contact of the array region. do.

In the organic light emitting device according to the embodiment of the present invention formed through the above-described manufacturing process, an organic light emitting diode 120 (OLED) is a light reflection partition wall formed using a partition paste including silver (Ag: argentums) having high light reflection efficiency. At least two sides are wrapped by the 200. As a result, the light efficiency of the organic light emitting device may be improved by reflecting the wave guide and the totally reflected light in the organic light emitting diode 120 (OLED).

In addition, by forming the light reflection partition wall 200 using the partition paste in which the inorganic metal powder and the glass frit are mixed, the undercut generated by etching in the process of forming a metal pattern can be generally prevented, and the manufacturing process Can be simplified.

Although not shown in the drawing, a plurality of switching TFTs, drive TFTs, and capacitors are formed in the back plan unit 110, and the light reflection partition wall 200 and the light emission formed on the outer side of the light emitting region 100 through the above-described manufacturing process. An organic light emitting diode 120 (OLED) may be formed in the region 100.

It will be understood by those skilled in the art that the present invention can be embodied in other specific forms without departing from the spirit or essential characteristics thereof. Therefore, it is to be understood that the embodiments described above are exemplary in all respects and not restrictive.

The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

100: light emitting region 110: back plan portion (glass substrate)
120: organic light emitting diode 122: first electrode
124: light emitting layer 126: second electrode
130: bank 140: electrode line
200: light reflection partition 210: partition paste
300: array area

Claims (11)

A glass substrate on which a plurality of TFTs and capacitors are formed;
A light reflection barrier formed on the glass substrate to cover at least two of four outer surfaces of the emission area;
A bank formed to cover the light reflection partition wall and insulating the light reflection partition wall; And
And an organic light emitting diode in which a first electrode, a light emitting layer, and a second electrode are sequentially formed in the light emitting region on the glass substrate.
The light reflection barrier is an organic light emitting device, characterized in that after the generated in the organic light emitting diode, the wave guide and the total reflection of the reflected light to the outside. The method of claim 1,
The light reflecting partition wall is formed of a photosensitive metal paste containing silver (Ag). The method of claim 2,
The light reflection barrier is an organic light emitting device, characterized in that formed of a photosensitive metal paste mixed with inorganic metal powder, glass frit and fumed silica. The method of claim 1,
And the light reflection barrier rib has a light reflection efficiency of 95% or more. The method of claim 1,
The light reflection barrier is formed in a stripe shape to surround both sides of the organic light emitting diodes. Forming a plurality of TFTs and capacitors on the glass substrate;
Applying a photosensitive metal paste onto the glass substrate, and then patterning the light reflective barrier rib to cover at least two of four outer surfaces of the emission area;
Forming a bank to insulate the light reflection barrier by applying an insulating material to cover the light reflection barrier; And
And sequentially forming a first electrode, a light emitting layer, and a second electrode in the light emitting region on the glass substrate to form an organic light emitting diode.
The light reflection barrier is a method of manufacturing an organic light emitting device, characterized in that after the generated in the organic light emitting diode, the wave guide and the total reflection of the reflected light to the outside. The method according to claim 6,
Fabrication of an organic light emitting device comprising applying a photosensitive metal paste containing silver (Ag) on the glass substrate and then performing a photolithography process, a firing process, and a strip process to form the light reflection partition wall Way. The method of claim 7, wherein
The photosensitive metal paste,
Inorganic metal powder, glass frit and fumed silica further comprising the manufacturing method of the organic light emitting device. The method of claim 8,
The photosensitive metal paste,
A method of manufacturing an organic light emitting device, characterized in that it further comprises an acrylic binder polymer, a cellulose binder polymer, a photoinitiator, a polyfunctional monomer, and a polyfunctional oligomer. The method according to claim 6,
The light reflection barrier is a method of manufacturing an organic light emitting device, characterized in that formed to have a light reflection efficiency of 95% or more. The method according to claim 6,
The light reflection barrier is formed in a stripe form to surround both sides of the organic light emitting diode manufacturing method of the organic light emitting device.

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