KR20120066209A - Apparatus for manufacturing poly crystaline silicon ingot for door open/close device having a wing type - Google Patents

Apparatus for manufacturing poly crystaline silicon ingot for door open/close device having a wing type Download PDF

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KR20120066209A
KR20120066209A KR1020100127438A KR20100127438A KR20120066209A KR 20120066209 A KR20120066209 A KR 20120066209A KR 1020100127438 A KR1020100127438 A KR 1020100127438A KR 20100127438 A KR20100127438 A KR 20100127438A KR 20120066209 A KR20120066209 A KR 20120066209A
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South Korea
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wing
crucible
door opening
closing device
manufacturing apparatus
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KR1020100127438A
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Korean (ko)
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KR101325779B1 (en
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김한성
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주식회사 글로실
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

The present invention relates to a polycrystalline silicon ingot manufacturing apparatus having a wing type door opening and closing device, comprising: a vacuum chamber of a predetermined size, a crucible provided in the vacuum chamber to accommodate a silicon raw material, and a silicon raw material in the crucible; A heater for applying heat to the heat sink, a susceptor provided under the crucible, a cooling plate for dissipating heat to grow silicon melted in the crucible, and a silicon provided between the crucible and the cooling plate to melt or grow. And a door opening and closing device for restraining heat release, a temperature sensor for measuring the temperature of the crucible, and a controller for controlling the temperature in the crucible so that the melting and uniform growth of silicon in the crucible is achieved by receiving the output value of the temperature sensor. In the silicon ingot manufacturing apparatus, the door opening and closing device is at least one It is characterized in that it comprises a drive unit having more than one wing (wing) to rotate the wing to control the heat release between the cooling plate and the crucible by rotating the wing horizontally.

Description

Apparatus for manufacturing poly crystaline silicon ingot for door open / close device having a wing type}

The present invention relates to a polycrystalline silicon ingot manufacturing apparatus having a wing type door opening and closing device, and more particularly, to a polycrystalline silicon ingot manufacturing apparatus for supplying cooling heat for the production of length ingots.

Recently, the photovoltaic power generation by silicon-type solar cells has reached the commercialization stage after the trial phase due to the advantages of pollution-free, stability and reliability.

In the United States, Japan and Germany, solar power generation of hundreds to thousands of kilowatts has been made using silicon solar cells. Currently, solar cells used for photovoltaic power generation are mainly manufactured using monocrystalline silicon thin plates manufactured by the Czochralski impression method, but it is recognized that the price of silicon thin plates should be lowered and the productivity should be further increased for continuous large capacity. It is becoming. Under this background, casting was developed as an effort to reduce the cost of silicon thin film for solar cells.

The production of polycrystalline silicon ingots for solar cells by the casting method is basically characterized by directional solidification. Polycrystalline silicon kernels are melted in a crucible made of quartz or graphite, and then the heat of dissolution of silicon is removed from the bottom of the crucible so that the cooling solidification is also moved from the bottom of the crucible to the upper part. ) Is to get the ingot.

The polycrystalline silicon ingot manufactured as described above is deteriorated in terms of electrical efficiency in solar cell manufacturing due to the grain boundaries present inside compared to the single crystal silicon ingot manufactured by the pulling method, but the crystal is in the direction of ingot growth. Since it is composed of columnar phases, it is inferior to about 20% in terms of its overall physical properties. However, it has the advantage of mass production (2 ~ 3 times of single crystal pulling method), excellent productivity (2 ~ 3 times of single crystal pulling method) and simple manufacturing technology. 2 to 1/3 level. The known casting method is to melt the polycrystalline silicon in advance in the polycrystalline silicon melting section made of quartz before supplying it to the graphite crucible, and then crystal growth is supplied by supplying from the lower part to the square or circular graphite crucible maintained at 600 to 1,200 ° C. There is a method of producing a polycrystalline silicon ingot.

However, in the conventional casting method, since a cold crucible is suddenly cooled and solidified, it is possible to prevent adhesion between silicon solidified and the crucible, but contamination from the crucible is large and thermal stress remains, resulting in a high concentration of defects and small crystal grains. Has a problem.

In order to solve this problem, the present applicant has filed a Korean Patent Application No. 10-2007-0006218, title of the invention: polycrystalline silicon ingot manufacturing apparatus for solar cells, door in a cooling plate approach for heat dissipation in silicon growth In order to solve the problem of opening and closing method, various domestic applications have been achieved.

Conventionally, there are various methods, but the method of cooling the lower part by lowering the crucible containing the double molten liquid away from the heater and installing a heat exchanger on the lower part to force heat through the relatively cold cooling plate for the crucible The method is universal. Crucible lowering method is preferred to use a heat exchanger because there is a limit to the discharge of heat to the bottom, but this method may be a phenomenon that the silicon does not melt enough because the heat is lost to the lower heat exchanger in the step of melting the silicon, so the melting step Energy consumption is high in.

For this reason, a device using a heat exchanger is constituted by a kind of gate having a heat insulating material between the heat exchanger and the bottom of the crucible. The gate is closed when the silicon melts, preventing heat from being taken away from the heat exchanger, allowing for a smoother melt, and opening during crystal growth to allow enough heat to escape to the heat exchanger below the gate.

1 to 3 is a prior art filed by the applicant, the gate (in the ingot manufacturing apparatus having a vacuum chamber 10, a heater 20, a crucible 30, a temperature sensor 40 and a gate 40) Various methods have been proposed as a method of constructing a door opener). Commercially applied methods include a horizontal sliding method shown in FIG. 1 and a method of controlling opening and closing by pushing up a gate while the heat exchanger is up using a hinge structure shown in FIG. 2. The horizontal sliding method is disadvantageous for the uniform growth of the ingot because it creates thermal unbalance in the growth space of the equipment. This is undesirable because it is the structure that affects the most important ingot growth. The hinged door method has the advantage of obtaining a symmetrical thermal equilibrium condition, but since the heat exchanger pushes up the door, space is needed in the height direction so that the heat exchanger can open and close the gate sufficiently.

In order to increase the size of the ingot in the future, it is necessary to grow the ingot in the width direction rather than in the height direction. In the hinge structure method, since the door height must be increased together when the ingot is extended to the side, the height of the equipment is also increased. There is this.

In order to solve the above problems, the present invention is suitable for solidification (cooling) structure according to the shape variation of silicon ingot manufacturing, that is, industrially required length ingot production, and polycrystalline silicon ingot that can solve thermal inequality. The purpose is to provide a device.

The present invention for achieving the above object, a vacuum chamber of a predetermined size, a crucible provided in the vacuum chamber to accommodate the silicon raw material, a heater for applying heat to melt the silicon raw material in the crucible, A susceptor provided below the crucible, a cooling plate for dissipating heat to grow silicon melted in the crucible, and a door opening and closing device provided between the crucible and the cooling plate to constrain heat release to melt or grow silicon. And a control unit for controlling the temperature in the crucible such that the temperature sensor for measuring the temperature of the crucible and the output value of the temperature sensor control the melting and uniform growth of the silicon in the crucible. The door opening and closing device has at least one wing and includes the wing. Characterized in that by pivoting from the normal that is configured to include a driving unit for turning the wing, so as to control the heat between the cooling plate and a crucible.

In addition, at least two wings may be provided, and the driving unit may drive the plurality of wings to be interlocked.

In addition, the wing is characterized in that the pivot point is in the center of the wing.

In addition, the wing is characterized in that the pivot point is eccentric rotation on one side of the wing.

In addition, the drive unit is provided on at least one or more wings, respectively, characterized in that the interlocking.

The driving unit may further include an encoder for determining an opening size by detecting a rotation amount of each wing.

In addition, the wings, a plurality of wings are arranged so as to overlap a predetermined interval, each of the overlapping surface is provided with a corresponding coupling groove and the coupling protrusion is characterized in that the coupling protrusion is coupled to the coupling groove.

In addition, the driving unit, according to the temperature state of the crucible detected by the temperature sensor, characterized in that for detecting the opening angle through the encoder and controlling the heat release by adjusting the opening angle.

In addition, the polycrystalline silicon ingot manufacturing apparatus for growing the molten silicon raw material by melting the silicon raw material in the crucible provided in the vacuum chamber of a predetermined size and then expose the cooling plate by the selective opening of the door opening and closing device, the door Opening and closing device is characterized in that it comprises a drive unit having at least one wing (wing) to rotate the wing to control the heat dissipation between the cooling plate and the crucible by rotating the wing horizontally. .

The present invention constituted as described above has the advantage of eliminating the thermal unbalance and eliminating the drawback of silicon growth.

In addition, according to the structural features of the switchgear can reduce the overall size of the ingot manufacturing apparatus and at the same time increase the size of the door there is an advantage that can achieve an effective silicon solidification.

1 to 3 is a schematic cutaway perspective view of the apparatus for producing ingots for solar cells according to the prior art;
4 is a schematic perspective view of a wing type door opening and closing apparatus according to the present invention;
5 is an embodiment showing a rotating structure of the wing type door opening and closing apparatus according to the present invention,
Figure 6 is another embodiment showing a rotating structure of the wing type door opening and closing apparatus according to the present invention,
7a and 7b is a perspective view showing a preferred embodiment of the wing type door opening and closing apparatus according to the present invention,
8 is a perspective view of a wing type door opening and closing apparatus according to another embodiment according to the present invention;
Figure 9 is a perspective view showing a polycrystalline silicon ingot manufacturing apparatus having a wing type door opening and closing device according to the present invention.

Hereinafter, a preferred embodiment of a polycrystalline silicon ingot manufacturing apparatus having a wing type door opening and closing apparatus according to the present invention will be described in detail.

Polycrystalline silicon ingot manufacturing apparatus having a wing-type door opening and closing device according to the present invention is a vacuum chamber 100 of a predetermined size, a crucible 200 is provided in the vacuum chamber to accommodate a silicon raw material, and in the crucible A heater 220 for applying heat to melt a silicon raw material, a susceptor 210 provided below the crucible, a cooling plate 400 for releasing heat to grow molten silicon in the crucible, and The door opening and closing device 500 provided between the crucible and the cooling plate to constrain heat release to melt or grow silicon, the temperature sensor 300 for measuring the temperature of the crucible, and the silicon in the crucible by receiving the output values of the temperature sensor. In the apparatus for producing a polycrystalline silicon ingot comprising a control unit for controlling the temperature in the crucible so that the melting and uniform growth of the Apparatus 500 includes a drive unit 600 having at least one wing 510 and rotating the wing to control heat dissipation between the cold plate and the crucible by rotating the wing horizontally. Characterized in that the configuration.

Wing type door opening and closing device according to the present invention is provided with a wing type door opening and closing device, in particular, in the manufacture of the length-shaped ingot recently required in the industry, without limiting the overall size of the ingot manufacturing apparatus, due to effective heat dissipation The main technical point is to be able to control stable heat release in ingot growth.

Inside the vacuum chamber 100, a predetermined space is formed, and most components of the ingot manufacturing apparatus are provided in the vacuum chamber 100.

The crucible 200 is for accommodating the silicon raw material and melting therein, and is preferably provided at the center of the vacuum chamber 100. The crucible 200 has an open top, and may have a cover (not shown) to open and close the top. As shown in the figure, the crucible 200 is preferably formed in a cube shape and is made of quartz.

Meanwhile, a susceptor 210 is provided below the crucible 200, and the susceptor serves to protect the crucible 200. The susceptor material is preferably made of carbon or graphite excellent in heat transfer.

A heater 220 is provided along the circumference of the crucible except for the lower side of the crucible provided with the susceptor 210. Of course, although the heater may be provided in the lower portion of the susceptor 210, in one embodiment of the present invention, the heater 220 is provided only on the upper and circumference of the susceptor 210. This is because it is possible to melt the silicon raw material in the crucible 200 even if the heater 220 is provided only on the top and the circumference of the susceptor 210.

As mentioned above, the heater is for melting the silicon raw material in the crucible, and the silicon raw material melting point is about 1423 degrees. For example, the power control method of the heater may be operated by a method of controlling a duty ratio of a voltage pulse applied to the heater or a method of controlling a period of the voltage pulse applied to the heater.

Of course, such a temperature measurement is made by the temperature sensor 300. The temperature sensor may be provided in plural ingot manufacturing apparatuses, and the temperature is measured by installing the heater and the crucible as an example.

Meanwhile, a cooling plate 400 for growing molten silicon is provided below the susceptor provided below the crucible, and a door opening and closing device 500 is provided between the cooling plate and the susceptor. That is, molten silicon in the crucible grows by the cooling plate 400 by the door opening of the door opening and closing device.

For example, the cooling plate 400 has a coolant path formed therein, and the coolant plate that cools by moving the coolant along the coolant path releases the crucible heat.

The schematic configuration of the polycrystalline silicon ingot manufacturing apparatus configured as described above is described in detail in the polycrystalline silicon ingot manufacturing apparatus for solar cells (Korea application number: 10-2007-0006218) filed by the applicant of the present invention, and a detailed description thereof will be omitted. Shall be. Inside the vacuum chamber 100, a predetermined space is formed, and most components of the ingot manufacturing apparatus are provided in the vacuum chamber 100.

The crucible 200 is for accommodating the silicon raw material and melting therein, and is preferably provided at the center of the vacuum chamber 100. The crucible 200 has an open top, and may have a cover (not shown) to open and close the top. As shown in the figure, the crucible 200 is preferably formed in a cube shape and is made of quartz.

Meanwhile, a susceptor 210 is provided below the crucible 200, and the susceptor serves to protect the crucible 200. The susceptor material is preferably made of carbon or graphite excellent in heat transfer.

A heater 220 is provided along the circumference of the crucible except for the lower side of the crucible provided with the susceptor 210. Of course, although the heater may be provided in the lower portion of the susceptor 210, in one embodiment of the present invention, the heater 220 is provided only on the upper and circumference of the susceptor 210. This is because it is possible to melt the silicon raw material in the crucible 200 even if the heater 220 is provided only on the top and the circumference of the susceptor 210.

As mentioned above, the heater is for melting the silicon raw material in the crucible, and the silicon raw material melting point is about 1423 degrees. For example, the power control method of the heater may be operated by a method of controlling a duty ratio of a voltage pulse applied to the heater or a method of controlling a period of the voltage pulse applied to the heater.

Of course, such a temperature measurement is made by the temperature sensor 300. The temperature sensor may be provided in plural ingot manufacturing apparatuses, and the temperature is measured by installing the heater and the crucible as an example.

Meanwhile, a cooling plate 400 for growing molten silicon is provided below the susceptor provided below the crucible, and a door opening and closing device 500 is provided between the cooling plate and the susceptor. That is, molten silicon in the crucible grows by the cooling plate 400 by the door opening of the door opening and closing device.

For example, the cooling plate 400 has a coolant path formed therein, and the coolant plate that cools by moving the coolant along the coolant path releases the crucible heat.

The schematic configuration of the polycrystalline silicon ingot manufacturing apparatus configured as described above is described in detail in the polycrystalline silicon ingot manufacturing apparatus for solar cells (Korea application number: 10-2007-0006218) filed by the applicant of the present invention, and a detailed description thereof will be omitted. Shall be.

As the main technical point according to the present invention, the door opening and closing device 500 is provided with at least one wing 510 horizontally side by side, to release the heat from the crucible to the cooling plate 400 while the wing is rotated It has a structure that controls the heat release for. The wing 500 according to the present invention has a structure that is installed in a structure that is arranged horizontally with respect to at least one or more crucibles to block between the cooling plate and the crucible, open by opening between the cooling plate and the crucible while the wing is rotated It is the structure which makes release.

Figure 4 is a schematic perspective view of the wing type door opening and closing apparatus according to the present invention. In the illustrated two wings are arranged side by side. The wing applied in the present invention has an advantageous advantage when the ingot grown in the crucible is to be produced in the shape of a length (rectangular). Conventionally, ingots are manufactured in a square shape, and thus various door structures for heat dissipation can be formed. However, in recent years, since the industry requires a length-shaped ingot, the structure of the door opening and closing device caused a lot of space limitations when the long ingot is manufactured in one direction.

However, in order to solve this problem, the present invention can solve the problem of the overall structural limitation of the ingot device according to the door opening and closing device because the heat release is controlled by arranging a plurality of wings of the rotating structure.

Figure 5 is an embodiment showing a rotating structure of the wing type door opening and closing apparatus according to the present invention. As shown, a plurality of the wings are arranged, and in order to rotate the wings, the wings may be provided with a gear 520 for driving one or both ends. Here, the gear may be provided at both ends or one end of the wing, preferably provided with a shaft and a bearing so as to freely rotate on one side and the gear 520 on the other side to drive each wing to rotate It can be provided in such a way as to receive.

At this time, the gear is connected to the gear of the driving unit (motor) 600 to control to open the wing at a constant speed and a predetermined radius under the control of the driving unit. In addition, in another embodiment, each wing may be integrally driven by using a component such as a belt or a chain (not shown), and may have a structure in which a driving part is directly connected to each wing. In order to realize cost reduction, we propose a structure that interlocks using a single drive motor. As described above, the mechanical mechanism for driving the wing according to the present invention can be variously changed by those skilled in the art, and the driving mechanism should be considered that the simple change belongs to the scope of the present invention.

On the other hand, in Figure 5 has a structure in which the pivot point of the wing is located in the center axis of the wing to rotate. In another embodiment, Figure 6 is another embodiment showing a rotating structure of the wing type door opening and closing apparatus according to the present invention. As shown in the drawing, a pivot point is provided on one side of the wing, so that the wing may have an eccentric rotation structure when the wing rotates. At this time, the rotation direction of the wing can be rotated to the upper side of the crucible or to the lower side of the cooling plate, as described above can set the rotation radius according to the center axis rotation or eccentric rotation of the wing. Through this, it is possible to control the spatial design of the ingot manufacturing apparatus.

In addition, the driving unit may further include a rotation position detecting means such as an encoder (560). The encoder is provided to detect an amount of rotation for adjusting the opening angle of each wing or to detect and control an appropriate amount of rotation in the entire door opening and closing device.

Figure 7a is a perspective view showing a preferred embodiment of the wing type door opening and closing apparatus according to the present invention. As shown, the wing type door opening and closing device according to the present invention may be provided with an appropriate number and an appropriate length according to the size of the crucible, and controls the endothermic amount to the cooling plate according to the size of the door opening and closing device. Figure 7b is another embodiment may be provided with wings arranged perpendicular to the length of the crucible.

8 is a perspective view showing a wing type door opening and closing apparatus according to another embodiment of the present invention. As shown, in order to maintain airtightness between the plurality of wings, each wing is arranged at an interval that can be overlapped upon closing, wherein coupling grooves 511 and coupling protrusions 512 are formed at both ends with respect to the length of the wing, respectively. It is. Accordingly, when the wing is closed, the coupling groove and the coupling protrusion may be in airtight contact to seal the heat energy transfer between the crucible and the cooling plate.

9 is a cutaway perspective view showing a polycrystalline silicon ingot manufacturing apparatus having a wing type door opening and closing apparatus according to the present invention. As mentioned above, the ingot manufacturing apparatuses are arranged inside the vacuum chamber, and a wing type door opening and closing device 500 according to the present invention is provided between the crucible and the cooling plate. During the melting of the silicon, the wing is closed and then the drive unit is controlled for silicon growth. The rate of solidification can be controlled by the opening size or the opening speed of the wing.

The present invention configured as described above has the advantage of eliminating the defects of silicon growth by eliminating thermal inequality by applying the rotary door opening and closing device, according to the structural characteristics of the wing type door opening and closing device of the entire ingot manufacturing apparatus The size can be lowered and there is an advantage suitable for the production of length ingots.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. On the contrary, those skilled in the art will appreciate that many modifications and variations of the present invention are possible without departing from the spirit and scope of the appended claims. And all such modifications and changes as fall within the scope of the present invention are therefore to be regarded as being within the scope of the present invention.

100: vacuum chamber 200: crucible
210: susceptor 220: heater
300: temperature sensor 400: cooling plate
500: door opening and closing device 510: wing
511: coupling groove 512: coupling protrusion
520: gear 600: drive unit
610: encoder

Claims (9)

A vacuum chamber of a predetermined size, a crucible provided in the vacuum chamber to receive a silicon raw material, a heater applying heat to melt the silicon raw material in the crucible, a susceptor provided below the crucible, and the crucible in the crucible A cooling plate for dissipating heat to grow molten silicon, a door opening and closing device provided between the crucible and the cooling plate to constrain heat release to melt or grow silicon, and a temperature sensor for measuring the temperature of the crucible; In the polycrystalline silicon ingot manufacturing apparatus comprising a control unit for controlling the temperature in the crucible so that the melting and uniform growth of the silicon in the crucible in response to the output value of the temperature sensor,
The door opening and closing device, at least one wing (wing),
And a drive unit that rotates the wing to rotate the wing on a horizontal plane to control heat dissipation between the cooling plate and the crucible. The method of claim 1, wherein the wing,
At least two or more, the drive unit is a polycrystalline silicon ingot manufacturing apparatus having a wing type door opening and closing device, characterized in that for driving the plurality of wings to interlock. The method of claim 1, wherein the wing,
Polycrystalline silicon ingot manufacturing apparatus having a wing type door opening and closing device, characterized in that the pivot point is in the center of the wing. The method of claim 1, wherein the wing,
Polycrystalline silicon ingot manufacturing apparatus having a wing type door opening and closing device characterized in that the pivoting point is eccentrically rotated on one side of the wing. The method of claim 1, wherein the driving unit,
Polycrystalline silicon ingot manufacturing apparatus having a wing-type door opening and closing device, characterized in that each of the at least one wing, or integrally interlocked. The method of claim 1, wherein the driving unit,
And an encoder for determining the opening size by detecting the rotation amount of each wing. The wing of claim 1 wherein the wing is
A plurality of wings are arranged so as to overlap a predetermined interval, the overlapping surface is provided with a wing-type door opening and closing device, characterized in that the corresponding coupling groove and the engaging projection is provided to be coupled to the coupling groove, respectively. Polycrystalline silicon ingot manufacturing apparatus. The method of claim 6, wherein the driving unit,
According to the temperature state of the crucible detected by the temperature sensor polycrystalline silicon ingot manufacturing apparatus having a wing type door opening and closing device characterized in that for detecting the opening angle through the encoder and controlling the heat release by adjusting the opening angle. . In the polycrystalline silicon ingot manufacturing apparatus for melting the silicon raw material in a crucible provided in a vacuum chamber of a predetermined size, and then grow the molten silicon raw material by exposing the cooling plate by the selective opening of the door opening and closing device,
The door opening and closing device, at least one wing (wing),
And a drive unit that rotates the wing to rotate the wing on a horizontal plane to control heat dissipation between the cooling plate and the crucible.
KR1020100127438A 2010-12-14 2010-12-14 Apparatus for manufacturing poly crystaline silicon ingot for door open/close device having a wing type KR101325779B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102978697A (en) * 2012-11-29 2013-03-20 杭州精功机电研究所有限公司 Movable curtain door device for crystalline silicon ingot furnace and control method of device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05214884A (en) * 1992-01-31 1993-08-24 Sekisui Chem Co Ltd Temperature sensing automatic opening-and-closing blind shutter
KR100852686B1 (en) 2007-01-19 2008-08-19 주식회사 글로실 Apparatus for manufacturing poly crystaline silicon ingot for solar battery

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102978697A (en) * 2012-11-29 2013-03-20 杭州精功机电研究所有限公司 Movable curtain door device for crystalline silicon ingot furnace and control method of device
CN102978697B (en) * 2012-11-29 2016-03-23 杭州精功机电研究所有限公司 A kind of crystal silicon ingot furnace moves act door gear and control method thereof

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