KR20120055786A - Susceptor and chemical vapor deposition device having a thereof - Google Patents

Susceptor and chemical vapor deposition device having a thereof Download PDF

Info

Publication number
KR20120055786A
KR20120055786A KR1020100117180A KR20100117180A KR20120055786A KR 20120055786 A KR20120055786 A KR 20120055786A KR 1020100117180 A KR1020100117180 A KR 1020100117180A KR 20100117180 A KR20100117180 A KR 20100117180A KR 20120055786 A KR20120055786 A KR 20120055786A
Authority
KR
South Korea
Prior art keywords
susceptor
chamber
substrate
chemical vapor
vapor deposition
Prior art date
Application number
KR1020100117180A
Other languages
Korean (ko)
Other versions
KR101208006B1 (en
Inventor
정진열
이창엽
Original Assignee
엘아이지에이디피 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘아이지에이디피 주식회사 filed Critical 엘아이지에이디피 주식회사
Priority to KR1020100117180A priority Critical patent/KR101208006B1/en
Publication of KR20120055786A publication Critical patent/KR20120055786A/en
Application granted granted Critical
Publication of KR101208006B1 publication Critical patent/KR101208006B1/en

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE: A susceptor and a chemical vapor deposition apparatus including the same are provided to perform a deposition process by loading substrates of various sizes on a stepped region and a loading groove, thereby improving production efficiency. CONSTITUTION: A chamber comprises a first chamber(100) located on the upper part of the chamber and a second chamber(200) combined with the first chamber. A process gas supply device(300) supplies process gas(G1) and inert gas(G2) to a substrate. The second chamber comprises a susceptor(500) for loading the substrate. The second chamber comprises a gas exhaust hole(201) for discharging the process gas and the inert gas. A guide member(610) is installed between the susceptor and an inner wall of a reaction chamber(800). The guide member comprises an outer circumferential wall(611), a curved part(612), an inner circumferential wall(613), and a discharge hole(615).

Description

서셉터 및 이를 가지는 화학기상증착장치{SUSCEPTOR AND CHEMICAL VAPOR DEPOSITION DEVICE HAVING A THEREOF}Susceptor and chemical vapor deposition apparatus having the same {SUSCEPTOR AND CHEMICAL VAPOR DEPOSITION DEVICE HAVING A THEREOF}

본 발명은 서셉터 및 이를 가지는 화학기상증착장치에 관한 것으로, 더욱 상세하게는 다양한 크기의 기판을 로딩하여 공정을 진행하여 생산효율이 증가되는 서셉터 및 이를 가지는 화학기상증착장치에 관한 것이다.
The present invention relates to a susceptor and a chemical vapor deposition apparatus having the same, and more particularly, to a susceptor and a chemical vapor deposition apparatus having the same by increasing the production efficiency by loading a substrate of various sizes.

유기금속화학기상증착법(MOCVD: Metal Organic Chemical Vapor deposition)은 예컨대 III족 유기 금속을 기화시켜, 그것을 기판 표면에서 열분해시키고 V족 가스와 반응시켜 박막을 형성하는 방법이다. 이 방법은 막 두께나 조성의 제어가 가능하고, 또한 생산성이 우수하기 때문에 반도체 등을 제조할 때 이용되고 있다.Metal Organic Chemical Vapor Deposition (MOCVD) is a method of vaporizing Group III organic metals, for example, by pyrolyzing them at the substrate surface and reacting with Group V gases to form thin films. This method is used when manufacturing a semiconductor or the like because the film thickness and composition can be controlled and the productivity is excellent.

이러한 유기금속화학기상증착장치에는 기판이 로딩되어 공정을 진행하기 위한 서셉터가 구비된다. 서셉터에는 다수개의 기판을 로딩시킨 후 동시에 증착공정을 실시하여 생산성을 높이고 있다.The organometallic chemical vapor deposition apparatus is equipped with a susceptor for loading a substrate to proceed with the process. The susceptor is loaded with a plurality of substrates and then subjected to a deposition process to increase productivity.

그러나 상기와 같은 종래의 유기금속화학기상증착장치는 예를 들어, 2인치 기판이 로딩되는 서셉터를 구비한 형태로 제작된 장치일 경우 다른 크기의 기판을 로딩하여 증착공정을 실시하지 못하는 문제가 있다.
However, in the conventional organometallic chemical vapor deposition apparatus as described above, for example, a device manufactured in the form of a susceptor loaded with a 2-inch substrate, there is a problem that a deposition process cannot be performed by loading a substrate having a different size. have.

본 발명은 전술한 문제를 해결하기 위한 것으로, 본 발명의 목적은 다양한 기판을 로딩하여 공정을 진행할 수 있는 서셉터 및 이를 가지는 화학기상증착장치를 제공하는데 있다.
The present invention is to solve the above problems, an object of the present invention is to provide a susceptor and a chemical vapor deposition apparatus having the same that can proceed with the process by loading a variety of substrates.

상기 과제를 해결하기 위한 본 발명에 따른 화학기상증착장치는, 공정이 수행되는 반응실과 상기 반응실로부터 외부로 가스를 배기하기 위한 가스 배출구를 구비하는 챔버; 상기 기판으로 공정가스를 공급하는 공정 가스 공급부; 상기 반응실 내부에 구비되어 기판이 로딩되도록 복수개의 단차가 형성된 로딩부를 구비하는 서셉터를 포함한다.Chemical vapor deposition apparatus according to the present invention for solving the above problems, the chamber having a reaction chamber in which a process is performed and a gas outlet for exhausting gas from the reaction chamber to the outside; A process gas supply unit supplying a process gas to the substrate; It includes a susceptor provided in the reaction chamber having a loading portion formed with a plurality of steps so that the substrate is loaded.

상기 로딩부에 형성된 상기 복수개의 단차에는 상이한 크기의 기판이 로딩된다.The plurality of steps formed in the loading unit are loaded with substrates of different sizes.

상기 로딩부의 상기 단차들 중 높은 위치의 단차에 상기 기판이 로딩되면 낮은 위치의 단차를 채우기 위한 캡이 구비된다.When the substrate is loaded at a step of a higher position among the steps of the loading part, a cap for filling a step of a lower position is provided.

한편 본 발명에 따른 서셉터는 베이스 플레이트; 상기 베이스 플레이트에 구비되어 기판이 로딩되도록 복수개의 단차가 형성된 로딩부를 포함한다.Meanwhile, the susceptor according to the present invention includes a base plate; It includes a loading unit provided in the base plate is formed with a plurality of steps so that the substrate is loaded.

상기 로딩부에 형성된 상기 복수개의 단차에는 상이한 크기의 기판이 로딩되고, 상기 로딩부의 상기 단차들 중 높은 위치의 단차에 상기 기판이 로딩되면 낮은 위치의 단차를 채우기 위한 캡이 구비된다.
The plurality of steps formed on the loading part may be loaded with substrates of different sizes, and the cap may be provided to fill a step at a lower position when the substrate is loaded at a step of a higher position among the steps of the loading part.

상기와 같은 구성의 본 발명에 따르면 다양크기의 기판을 처리할 수 있어 생산효율이 증가되는 효과가 있다.
According to the present invention of the configuration as described above can process the substrate of various sizes has the effect of increasing the production efficiency.

도 1은 본 발명의 실시예에 따른 화학기상증착장치의 개략적인 단면도로서, 가스의 흐름을 나타낸다.
도 2는 본 발명의 실시예에 따른 화학기상증착장치에 구비된 서셉터의 사시도이다.
도 3은 본 발명의 실시에에 따른 화학기상증착장치에 구비된 서셉터의 단면도이다.
도 4는 본 발명의 실시예에 따른 화학기상증착장치에 구비된 서셉터에 기판이 로딩된 상태의 단면도이다.
도 5는 본발명의 실시예에 따른 화학기상증착장치에 구비된 섭셉터의 사용상태도이다.1 is a schematic cross-sectional view of a chemical vapor deposition apparatus according to an embodiment of the present invention, showing the flow of gas.
2 is a perspective view of a susceptor provided in a chemical vapor deposition apparatus according to an embodiment of the present invention.
3 is a cross-sectional view of the susceptor provided in the chemical vapor deposition apparatus according to the embodiment of the present invention.
4 is a cross-sectional view of a substrate loaded on the susceptor provided in the chemical vapor deposition apparatus according to the embodiment of the present invention.
Figure 5 is a state diagram of the use of the receptor provided in the chemical vapor deposition apparatus according to an embodiment of the present invention.

이하 첨부된 도면을 참조하여 본 발명의 실시예를 상세히 설명하기로 하며, 도면상에서 동일 부호로 표시된 요소는 동일 요소를 의미한다. DETAILED DESCRIPTION Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, in which elements denoted by the same reference numerals mean the same elements.

본 실시예는 일반적인 유기금속화학기상증착(MOCVD)장치 등을 비롯하여 기타 다양한 화학기상증착장치에 적용가능하다. This embodiment is applicable to a variety of other chemical vapor deposition apparatus, including a general organic metal chemical vapor deposition (MOCVD) apparatus.

그리고 본 발명에 따른 서셉터는 화학기상증착장치에 포함되는 구성이므로 별도의 설명은 생략한다.And since the susceptor according to the present invention is a configuration included in the chemical vapor deposition apparatus, a separate description is omitted.

도 1 내지 도 5에 도시된 바와 같이, 본 발명의 실시예에 따른 서셉터 및 이를 가지는 화학기상증착장치의 챔버는 상부에 위치하는 제 1 챔버(100) 및 하부에 위치하여 제 1 챔버(100)와 결합되는 제 2 챔버(200)를 구비한다. 제 1 챔버(100)와 제 2 챔버(200)의 결합에 의해 내부에는 공정이 수행되는 반응실(800)이 형성된다.As shown in Figure 1 to 5, the susceptor and the chamber of the chemical vapor deposition apparatus having the same according to an embodiment of the present invention is the first chamber 100 located in the upper and the first chamber 100 located in the lower It is provided with a second chamber 200 coupled to. By combining the first chamber 100 and the second chamber 200, a reaction chamber 800 in which a process is performed is formed.

제 1 챔버(100)에는 공정가스(G1)와 비활성가스(G2)를 공급하기 위한 공정가스 공급부(300)가 구비되어, 중앙 부분에서는 기판(S)에 박막 형성을 위한 공정가스(G1)가 공급되고, 외곽부분인 비활성가스커튼부(400)에서는 배기를 활성화하기 위한 비활성가스가 공급된다. 공정가스 공급부(300)는 중앙부분으로 공정가스(G1)가 공급되도록 공정가스 유입구(101)를 구비하고, 외곽부분에는 비활성가스(G2)를 공급하는 비활성가스유입구(102)가 각각 구획된 상태로 구비된다.The first chamber 100 is provided with a process gas supply unit 300 for supplying the process gas G1 and the inert gas G2, and in the center part, the process gas G1 for forming a thin film on the substrate S is provided. The inert gas curtain unit 400, which is an outer portion, is supplied with an inert gas for activating exhaust gas. The process gas supply unit 300 includes a process gas inlet 101 so that the process gas G1 is supplied to the center portion, and an inert gas inlet 102 for supplying the inert gas G2 is partitioned at the outer portion. It is provided with.

공정가스 공급부(300)는 본 실시예에서 설명하는 바와 같이 샤워헤드(SHOWERHEAD)와 같은 형태일 수 있으며, 도시 되지는 않은 형태로 노즐(NOZZLE)형태일 수도 있다.
The process gas supply unit 300 may be in the form of a showerhead as described in the present embodiment, or may be in the form of a nozzle (NOZZLE) in a form not shown.

제 2 챔버(200)에는 공정가스 공급부(300)에서 공급되는 공정가스(G1)에 의해 기판(S) 상에 박막형성이 진행되도록 기판(S)이 로딩되는 서셉터(500)가 구비된다.The second chamber 200 is provided with a susceptor 500 in which the substrate S is loaded such that the thin film is formed on the substrate S by the process gas G1 supplied from the process gas supply unit 300.

서셉터(500)에는 다양한 크기의 기판(S1~S4))이 로딩되도록 복수개의 단차가 형성된 로딩부(502)가 구비된다. 로딩부(502)는 서셉터 또는 베이스 플레이트(500)에 형성되는 로딩홈(504)과 로딩홈(504)을 기준으로 로딩홈(504)의 주위에 복수개의 단차(506)(508)(510)가 형성된다.The susceptor 500 is provided with a loading unit 502 having a plurality of steps formed thereon so that substrates S1 to S4 having various sizes are loaded. The loading unit 502 includes a plurality of steps 506, 508, 510 around the loading groove 504 based on the loading groove 504 and the loading groove 504 formed in the susceptor or base plate 500. ) Is formed.

예를 들어, 로딩홈(504)에는 2인치의 웨이퍼(S1)가 로딩되고, 로딩홈(504)에 가장 근접하게 형성된 단차(506)에는 4인치 웨이퍼(S2), 그 다음 단차(508)에는 6인치 웨이퍼(S3) 그리고 마지막 단차(510)에는 8인치 웨이퍼(S4)가 로딩된다.For example, the loading groove 504 is loaded with a 2-inch wafer S1, the step 506 formed closest to the loading groove 504 is a 4-inch wafer S2, and then the step 508 The 6-inch wafer S3 and the last step 510 are loaded with the 8-inch wafer S4.

이러한 로딩홈(540)과 단차(506)(508)(510)에 다양한 크기의 기판(S1)(S2)(S3)(S4)이 로딩되어 증착공정을 실시할 수 있어 생산효율이 향상되는 것이다. 상술한 형태의 단차(506)(508)(510) 이외에 추가적인 단차를 더 형성할 경우 더 큰 크기 또는 작은 크기의 기판을 선택적으로 처리할 수 있게 된다.The substrates S1, S2, S3, and S4 of various sizes are loaded into the loading grooves 540 and the steps 506, 508, and 510, thereby improving the production efficiency. . If additional steps are formed in addition to the steps 506, 508, and 510 of the above-described type, it is possible to selectively process larger or smaller substrates.

만약 큰 크기의 웨이퍼(S4)를 로딩시켜 증착할 경우 제일 위쪽의 단차(510) 이외의 아래부분(504)(506)(508)에는 그라파이트(GRAPHITE) 재질의 서셉터(500)와 동일한 재질로 형성된 캡(514)을 위치시킨다. 나머지 부분(504)(506)(508)을 캡(514)으로 채우는 것은 히터(미도시) 등에 의해 가열할 경우 해당 웨이퍼(S4)에 열 전달이 전체적으로 균일하게 되도록 하기 위한 것이다. 또한, 서셉터(500)가 회전할 경우 웨이퍼(S4)의 중심부분이 쳐지는 것을 방지하기 위한 것이다.
If a large size wafer S4 is loaded and deposited, the lower portions 504, 506, and 508 other than the top step 510 are made of the same material as the susceptor 500 made of graphite (GRAPHITE). Place the formed cap 514. Filling the remaining portions 504, 506, 508 with the cap 514 is such that the heat transfer to the wafer S4 is uniform throughout when heated by a heater (not shown) or the like. In addition, when the susceptor 500 rotates, the center portion of the wafer S4 is prevented from falling.

그리고 제 2 챔버(200)에는 공정가스(G1) 및 비활성가스(G2)가 배출되는 가스 배출구(201)가 형성된다.In addition, a gas outlet 201 through which the process gas G1 and the inert gas G2 are discharged is formed in the second chamber 200.

또한 제 2 챔버(200)에는 제 1 챔버(100)와 제 2 챔버(200)의 결합에 의해 형성되는 반응실(800)의 내벽과 기판(S)이 로딩되는 서섭터(500) 사이에 설치되는 가이드 부재(610)가 구비된다.In addition, the second chamber 200 is installed between the inner wall of the reaction chamber 800 formed by the combination of the first chamber 100 and the second chamber 200 and the susceptor 500 on which the substrate S is loaded. Guide member 610 is provided.

가이드부재(610)는 외주벽(611), 곡면부(612), 내주벽(613) 및 배출구(615)를 포함한다. The guide member 610 includes an outer circumferential wall 611, a curved portion 612, an inner circumferential wall 613, and an outlet 615.

가이드부재(610)는 석영으로 제작될 수 있다.The guide member 610 may be made of quartz.

곡면부(612)는 서셉터(500)측으로 소정의 곡률을 가지도록 굴곡된 부분이다.The curved portion 612 is a portion bent to have a predetermined curvature toward the susceptor 500.

가이드 부재(610)에는 가스 배출구(201)와 연통되는 배출구(615)가 형성되어 가스(G1)(G2)가 배출된다. 가이드 부재(610)는 박막형성 과정에서 발생하는 파티클이 챔버(100)(200)에 부착되는 것을 방지하고, 공정가스(G1) 및 비활성가스(G2)의 흐름을 안내한다. 이러한 가이드 부재(610)는 일정 회수의 박막형성 공정 후에 교체된다.The guide member 610 is provided with a discharge port 615 communicating with the gas discharge port 201 to discharge the gas (G1) (G2). The guide member 610 prevents particles generated in the thin film formation process from being attached to the chambers 100 and 200, and guides the flow of the process gas G1 and the inert gas G2. The guide member 610 is replaced after a certain number of thin film formation processes.

제 1 챔버(100)와 제 2 챔버(200)는 도시된 바와 같이 제 1 챔버(100)와 제 2 챔버(200)를 상하로 분리되는 형태로 구성하거나 제 1 챔버(100)와 제 2 챔버(200)를 힌지(미도시) 결합 형태가 되도록 할 수 있다. 이러한 제 1 챔버(100)와 제 2 챔버(200)의 분리는 유지 보수를 위한 것이다.As illustrated, the first chamber 100 and the second chamber 200 may be configured in a form in which the first chamber 100 and the second chamber 200 are vertically separated or the first chamber 100 and the second chamber. The 200 may be in the form of a hinge (not shown). The separation of the first chamber 100 and the second chamber 200 is for maintenance.

서셉터(500) 상부에는 기판(S)이 로딩되어 그 상부에 박막이 형성된다. 서셉터(500) 내측에는 히터(미도시)가 마련될 수 있다.The substrate S is loaded on the susceptor 500 to form a thin film thereon. A heater (not shown) may be provided inside the susceptor 500.

균일한 박막형성을 위하여 서셉터(500)의 하부에는 기판(S)을 회전시킬 수 있는 회전부재(501)가 마련될 수 있다. 본 실시예에서는 기판(S)과 서셉터(500)가 일체로 회전하는 구성을 예시하였다.
In order to form a uniform thin film, a lower portion of the susceptor 500 may be provided with a rotating member 501 capable of rotating the substrate S. In this embodiment, the configuration in which the substrate S and the susceptor 500 rotate integrally is illustrated.

100 : 제 1 챔버 200 : 제 2 챔버
300 : 공정가스 공급부 500 : 서셉터
514 : 캡 506, 508, 510 : 단차
610 : 가이드 부재100: first chamber 200: second chamber
300: process gas supply unit 500: susceptor
514: caps 506, 508, 510: step
610: guide member

Claims (6)

공정이 수행되는 반응실과 상기 반응실로부터 외부로 가스를 배기하기 위한 가스 배출구를 구비하는 챔버;
상기 기판으로 공정가스를 공급하는 공정 가스 공급부;
상기 반응실 내부에 구비되어 기판이 로딩되도록 복수개의 단차가 형성된 로딩부를 구비하는 서셉터를 포함하는 것을 특징으로 하는 화학기상증착장치.
A chamber including a reaction chamber in which a process is performed and a gas outlet for exhausting gas from the reaction chamber to the outside;
A process gas supply unit supplying a process gas to the substrate;
And a susceptor provided in the reaction chamber, the susceptor including a loading part in which a plurality of steps are formed to load a substrate.
제 1항에 있어서, 상기 로딩부에 형성된 상기 복수개의 단차에는 상이한 크기의 기판이 로딩되는 것을 특징으로 하는 화학기상증착장치.
The chemical vapor deposition apparatus according to claim 1, wherein substrates of different sizes are loaded in the plurality of steps formed in the loading portion.
제 1항에 있어서, 상기 로딩부의 상기 단차들 중 높은 위치의 단차에 상기 기판이 로딩되면 낮은 위치의 단차를 채우기 위한 캡이 구비되는 것을 특징으로 하는 화학기상증착장치.
The chemical vapor deposition apparatus according to claim 1, wherein a cap is provided to fill a step at a low position when the substrate is loaded at a step of a high position among the steps of the loading part.
베이스 플레이트;
상기 베이스 플레이트에 구비되어 기판이 로딩되도록 복수개의 단차가 형성된 로딩부를 포함하는 것을 특징으로 하는 서셉터.
Base plate;
And a loading part provided on the base plate, the loading part having a plurality of steps formed thereon to load the substrate.
제 4항에 있어서, 상기 로딩부에 형성된 상기 복수개의 단차에는 상이한 크기의 기판이 로딩되는 것을 특징으로 하는 서셉터.
The susceptor of claim 4, wherein substrates of different sizes are loaded in the plurality of steps formed in the loading unit.
제 4항에 있어서, 상기 로딩부의 상기 단차들 중 높은 위치의 단차에 상기 기판이 로딩되면 낮은 위치의 단차를 채우기 위한 캡이 구비되는 것을 특징으로 하는 서셉터.The susceptor according to claim 4, wherein a cap is provided to fill a step at a lower position when the substrate is loaded at a step of a higher position among the steps of the loading part.
KR1020100117180A 2010-11-24 2010-11-24 Susceptor and chemical vapor deposition device having a thereof KR101208006B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020100117180A KR101208006B1 (en) 2010-11-24 2010-11-24 Susceptor and chemical vapor deposition device having a thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100117180A KR101208006B1 (en) 2010-11-24 2010-11-24 Susceptor and chemical vapor deposition device having a thereof

Publications (2)

Publication Number Publication Date
KR20120055786A true KR20120055786A (en) 2012-06-01
KR101208006B1 KR101208006B1 (en) 2012-12-04

Family

ID=46608086

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100117180A KR101208006B1 (en) 2010-11-24 2010-11-24 Susceptor and chemical vapor deposition device having a thereof

Country Status (1)

Country Link
KR (1) KR101208006B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220130692A1 (en) * 2020-10-22 2022-04-28 Applied Materials, Inc. Semiconductor chamber component cleaning systems

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100790729B1 (en) * 2006-12-11 2008-01-02 삼성전기주식회사 Chemical vapor deposition apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220130692A1 (en) * 2020-10-22 2022-04-28 Applied Materials, Inc. Semiconductor chamber component cleaning systems
US11848218B2 (en) * 2020-10-22 2023-12-19 Applied Materials, Inc. Semiconductor chamber component cleaning systems

Also Published As

Publication number Publication date
KR101208006B1 (en) 2012-12-04

Similar Documents

Publication Publication Date Title
US9412582B2 (en) Reaction tube, substrate processing apparatus, and method of manufacturing semiconductor device
US11377730B2 (en) Substrate processing apparatus and furnace opening cover
US7648578B1 (en) Substrate processing apparatus, and method for manufacturing semiconductor device
JP2018107255A (en) Film deposition apparatus, film deposition method and heat insulation member
TW201944523A (en) Substrate supporting apparatus, substrate processing apparatus including the same, and substrate processing method
JP5780062B2 (en) Substrate processing apparatus and film forming apparatus
TW201044484A (en) Substrate processing apparatus
KR101579503B1 (en) Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer readable recording medium
KR101745075B1 (en) Substrate processing apparatus, method of manufacturing semiconductor device, and storage medium
JP6095172B2 (en) Semiconductor device manufacturing method, substrate processing method, and substrate processing apparatus
US20180138031A1 (en) Process chamber having separate process gas and purge gas regions
JP2017028260A (en) Substrate processing apparatus
CN108220920B (en) Substrate processing apparatus and substrate processing method
KR20070098104A (en) Thinfilm deposition apparatus having gas curtain
US20180171467A1 (en) Method of Manufacturing Semiconductor Device, Substrate Processing Apparatus and Non-Transitory Computer-Readable Recording Medium
WO2016063670A1 (en) Deposition device and deposition method
KR101398949B1 (en) Substrate processing apparatus
JP2011058031A (en) Method for producing semiconductor device and substrate treatment apparatus
JP6226677B2 (en) Semiconductor manufacturing apparatus and semiconductor manufacturing method
KR101208006B1 (en) Susceptor and chemical vapor deposition device having a thereof
JP2014192484A (en) Semiconductor device manufacturing method and substrate processing apparatus
CN110629199A (en) Method for manufacturing epitaxial silicon wafer
US20170207078A1 (en) Atomic layer deposition apparatus and semiconductor process
KR101503256B1 (en) Apparatus and method of processing substrate
JP2015206105A (en) Substrate treatment apparatus and semiconductor manufacturing method

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E90F Notification of reason for final refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee