KR20120052440A - Semiconductor integrated circuit apparatus having fuses - Google Patents
Semiconductor integrated circuit apparatus having fuses Download PDFInfo
- Publication number
- KR20120052440A KR20120052440A KR1020100113282A KR20100113282A KR20120052440A KR 20120052440 A KR20120052440 A KR 20120052440A KR 1020100113282 A KR1020100113282 A KR 1020100113282A KR 20100113282 A KR20100113282 A KR 20100113282A KR 20120052440 A KR20120052440 A KR 20120052440A
- Authority
- KR
- South Korea
- Prior art keywords
- fuses
- fuse block
- logic
- redundancy
- semiconductor integrated
- Prior art date
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/027—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in fuses
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
- G11C29/787—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using a fuse hierarchy
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
The present invention relates to a semiconductor integrated circuit device, and more particularly, to a semiconductor integrated circuit device including a fuse.
In semiconductor integrated circuit devices, fuses are used to repair defective cells, store chip identification, and provide various mode signals. The fuse may be formed of a metal pattern in the form of a line, and the cutting may be performed by laser blowing.
1 is a plan view illustrating a general semiconductor integrated circuit device.
Referring to FIG. 1, the semiconductor integrated
A plurality of pads 60 and
However, as the integration density of a semiconductor integrated circuit device increases, the ratio of the peripheral area, particularly the fuse block area, to the total chip area is gradually increased. For this reason, although it is required to reduce the area of the fuse block, it is difficult to reduce the area any more with the current laser fuse using laser blowing.
Accordingly, the present invention is to provide a semiconductor integrated circuit device capable of reducing the ratio of fuse blocks to the total chip area.
The semiconductor integrated circuit device of the present invention for achieving the above object of the present invention is arranged in series with a guard ring, a plurality of redundancy fuses provided in the guard ring, and the plurality of redundancy fuses in the guard ring. And a fuse block having a plurality of logic fuses for providing a mode signal.
In addition, a semiconductor integrated circuit device according to another exemplary embodiment of the present invention may be divided at predetermined intervals by a peripheral area, and include a plurality of banks including a plurality of word lines and a plurality of bit lines that cross each other, and are perpendicular to the word lines. A low redundancy fuse block located at one end of the bank, a column redundancy fuse block located at one end of the bank perpendicular to the bit line, and at least one logic circuit part disposed in the peripheral region; At least one of the low redundancy fuse block and the column redundancy fuse block includes option fuses electrically connected to the logic circuit unit.
In accordance with the present invention, logic fuses are provided that provide options in the column or low redundancy fuse block. Accordingly, since the redundancy fuse and the logic fuses are surrounded by one guard ring, the area between the guard ring and the fuse is reduced for each individual logic fuse block.
In addition, by embedding the logic fuse block formed in the peripheral area in the column or the low redundancy fuse block, the routing of the wiring can be reduced, thereby reducing the wiring resistance and securing the wiring area.
As such, the area of the fuse block can be reduced, and thus the integration density of the semiconductor integrated circuit device can be greatly improved.
1 is a plan view of a general semiconductor integrated circuit device,
2 is a plan view schematically showing a typical fuse block;
3 is a plan view showing a fuse block according to an embodiment of the present invention, and
4 is a plan view of a semiconductor integrated circuit device according to an embodiment of the present invention.
Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. However, embodiments of the present invention may be modified in many different forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. Embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Therefore, the shapes and the like of the elements in the drawings are exaggerated in order to emphasize a clearer description, and elements denoted by the same symbols in the drawings denote the same elements.
Referring to FIG. 3, the
Such redundancy fuses FA and logic fuses FB are surrounded by one
The
4 is a plan view of a semiconductor integrated circuit device according to an embodiment of the present invention.
Referring to FIG. 4, the logic fuses FB of the
In this case, the
As the logic fuses FB are integrally installed with the redundancy fuses FA, there is no need to install a separate logic fuse block in the
In addition, as described above with reference to FIG. 3, the logic fuses FB and the redundancy fuses FA are respectively integrated to be bundled by one
Therefore, it is possible to greatly reduce the area of the fuse block relative to the total chip area.
Although the present invention has been described in detail with reference to preferred embodiments, the present invention is not limited to the above embodiments, and various modifications may be made by those skilled in the art within the scope of the technical idea of the present invention. .
100: fuse block FA: redundancy fuses
FB: logic fuses 110: guard ring
200: peripheral area 300: logic circuit
350: wiring
Claims (6)
A plurality of redundancy fuses provided in the guard ring; And
And a fuse block having a plurality of logic fuses for providing a mode signal arranged in series with said plurality of redundancy fuses in said guard ring.
Further comprising a plurality of banks,
And the fuse blocks are disposed at one outer side of the banks, respectively.
And a peripheral region located in the space between the banks.
And a logic circuit portion electrically connected to the logic fuses in the peripheral area.
And the logic fuses and the logic circuit portion are electrically connected by metal wires.
A low redundancy fuse block positioned at one end of the bank perpendicular to the word line;
A column redundancy fuse block positioned at one end of the bank perpendicular to the bit line;
At least one logic circuit portion disposed in the peripheral region,
And at least one of the low redundancy fuse block or the column redundancy fuse block includes option fuses electrically connected to the logic circuit portion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100113282A KR20120052440A (en) | 2010-11-15 | 2010-11-15 | Semiconductor integrated circuit apparatus having fuses |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100113282A KR20120052440A (en) | 2010-11-15 | 2010-11-15 | Semiconductor integrated circuit apparatus having fuses |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20120052440A true KR20120052440A (en) | 2012-05-24 |
Family
ID=46269012
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020100113282A KR20120052440A (en) | 2010-11-15 | 2010-11-15 | Semiconductor integrated circuit apparatus having fuses |
Country Status (1)
Country | Link |
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KR (1) | KR20120052440A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102342532B1 (en) * | 2020-06-19 | 2021-12-22 | 주식회사 키파운드리 | Non-Volatile Memory Device having a Fuse Type Cell Array |
US11328783B2 (en) | 2019-10-29 | 2022-05-10 | Key Foundry Co., Ltd. | Semiconductor device having a diode type electrical fuse (e-fuse) cell array |
-
2010
- 2010-11-15 KR KR1020100113282A patent/KR20120052440A/en not_active Application Discontinuation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11328783B2 (en) | 2019-10-29 | 2022-05-10 | Key Foundry Co., Ltd. | Semiconductor device having a diode type electrical fuse (e-fuse) cell array |
US11538541B2 (en) | 2019-10-29 | 2022-12-27 | Key Foundry Co., Ltd. | Semiconductor device having a diode type electrical fuse (e-fuse) cell array |
KR102342532B1 (en) * | 2020-06-19 | 2021-12-22 | 주식회사 키파운드리 | Non-Volatile Memory Device having a Fuse Type Cell Array |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |