KR20120048118A - Led for plant grow using quantum dots - Google Patents
Led for plant grow using quantum dots Download PDFInfo
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- KR20120048118A KR20120048118A KR1020100109573A KR20100109573A KR20120048118A KR 20120048118 A KR20120048118 A KR 20120048118A KR 1020100109573 A KR1020100109573 A KR 1020100109573A KR 20100109573 A KR20100109573 A KR 20100109573A KR 20120048118 A KR20120048118 A KR 20120048118A
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- metal oxide
- led
- quantum dot
- quantum dots
- plant growth
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Classifications
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
- A01G7/00—Botany in general
- A01G7/04—Electric or magnetic or acoustic treatment of plants for promoting growth
- A01G7/045—Electric or magnetic or acoustic treatment of plants for promoting growth with electric lighting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P60/00—Technologies relating to agriculture, livestock or agroalimentary industries
- Y02P60/14—Measures for saving energy, e.g. in green houses
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- Life Sciences & Earth Sciences (AREA)
- Biodiversity & Conservation Biology (AREA)
- Botany (AREA)
- Ecology (AREA)
- Forests & Forestry (AREA)
- Environmental Sciences (AREA)
- Luminescent Compositions (AREA)
- Cultivation Of Plants (AREA)
- Led Device Packages (AREA)
Abstract
Description
본 발명은 서로 다른 입경분포를 갖는 1~5개의 양자점을 혼합하여 사용함으로써 자연광에 가까운 다양한 파장으로 변환되어 방출되도록 하여 자연광을 대체 또는 자연광을 보충하여 식물재배에 적용할 수 있는 식물생장용 LED에 관한 것이다. The present invention uses a mixture of 1 to 5 quantum dots having a different particle size distribution to be converted to a variety of wavelengths close to natural light to be emitted to replace the natural light or supplement the natural light to the plant growth LED that can be applied to plant cultivation It is about.
식물은 엽록체가 햇빛에 의해 탄산가스와 물로부터 탄수화물을 합성하는 탄소동화작용을 하여 생태계에 영양소를 생성하고 산소를 공급하는 중요한 역할을 한다. 이와 같이 식물이 빛에너지를 화학에너지로 바꾸는 과정인 광합성 및 엽록성 작용의 효율을 높이기 위하여 햇빛을 대체할 수 있는 특정영역의 파장대에 속하는 광원이 요구된다.Plants play an important role in chloroplasts, which synthesize carbohydrates from carbon dioxide and water by sunlight, producing nutrients and supplying oxygen to the ecosystem. Thus, in order to increase the efficiency of photosynthesis and chlorophyll action, a process in which plants convert light energy into chemical energy, a light source belonging to a wavelength range of a specific region capable of replacing sunlight is required.
식물의 성장 및 재배를 위한 조명 수단으로 종래 백열등, 형광등, 할로겐 전구, 고압나트륨 전구 등을 사용해 왔으나, 최근 에너지 절감 및 환경 보호를 위한 대체용으로 식물 재배용 반도체 발광 다이오드의 개발이 진행되고 있다.Conventional incandescent lamps, fluorescent lamps, halogen bulbs, high pressure sodium bulbs, etc. have been used as lighting means for plant growth and cultivation, but recently, development of semiconductor light emitting diodes for plant cultivation as a substitute for energy saving and environmental protection has been progressed.
상기 식물 재배용 발광다이오드는 식물의 성장 특성에 따라 최적의 파장대역 및 밝기의 광을 조절하는 것이 필요하다. 대한민국공개특허 2003-0005023에는 여러 종류의 LED를 적당한 비율로 조합하여 다수의 LED를 보드상에 배치하는 방법이 개시되어 있고, 대한민국공개특허 2004-0010426에는 원적외선광 730nm, 적색광 660nm, 청색광 450nm의 LED 램프를 광원으로 사용하는 시스템이 개시되어 있다. The light emitting diode for plant cultivation needs to control light having an optimal wavelength band and brightness according to the growth characteristics of the plant. Korean Patent Laid-Open Publication No. 2003-0005023 discloses a method of arranging a plurality of LEDs on a board by combining various kinds of LEDs at an appropriate ratio, and Korean Patent Laid-Open Publication No. 2004-0010426 discloses LEDs having 730 nm of far infrared light, 660 nm of red light, and 450 nm of blue light. A system using a lamp as a light source is disclosed.
이와 같은 종래 기술은 제어 시스템 용도로 개발되어 일반적인 식물을 재배하는 농가에서 사용하기에 부담이 되며, 투자 비용대비 효율성의 문제가 있다.Such a prior art is developed for the use of a control system is a burden for use in farms growing conventional plants, there is a problem of efficiency of investment cost.
상기와 같은 문제는 LED 램프가 다양한 용도로 활용되고는 있으나, 하나의 발광물질을 이용하여 제조되는 것이 일반적이며 자연광에 가까운 다양한 파장의 빛을 방출하지 못하는 한계가 있으며, 무기물 형광체의 발광효율이 낮으며 연색성 지수가 낮아 자연광을 얻기 어려운 단점이 있기 때문이다.Although the LED lamp is used for various purposes, it is generally manufactured using a single light emitting material, and there is a limit in that it cannot emit light of various wavelengths close to natural light, and the luminous efficiency of the inorganic phosphor is low. The low color rendering index makes it difficult to obtain natural light.
한편 양자점은 나노 크기의 반도체 물질로서 양자제한(quantum confinement) 효과를 나타내는 물질이다. 이러한 양자점은 여기원(excitation source)으로부터 빛을 흡수하여 에너지 여기 상태에 이르면, 양자점의 에너지 밴드 갭(band gap)에 해당하는 에너지를 방출하게 된다. 따라서, 양자점의 크기 또는 물질 조성을 조절하게 되면 에너지 밴드 갭(band gap)을 조절할 수 있게 되어 자외선 영역에서부터 적외선 영역까지 전 영역에서 발광이 가능하게 된다. 양자점은 통상적으로 수 나노의 크기를 가진다. 양자점을 제조하는 방법으로는 위에서 언급한 바와 같이, MOCVD(metal organic chemical vapor deposition)나 MBE(molecular beam epitaxy)와 같은 기상 증착법이 사용될 수도 있고, 바람직하게는 화학적 습식 합성법이 사용될 수 있다. 화학적 습식합성법에 의해 제조된 양자점은 콜로이드 상태로 용매 내에 분산되어 있으므로, 원심분리를 통해 용매로부터 양자점을 분리해 낸다. 상기와 같이 분리해 낸 양자점은 상기에서 제조된 금속-유기물 전구체 용액에 분산된다. 이 때, 양자점은 금속-유기물 전구체의 유기물과의 결합에 의하여 안정화될 수 있다.Quantum dots, on the other hand, are nanoscale semiconductor materials that exhibit quantum confinement effects. When the quantum dot absorbs light from an excitation source and reaches an energy excited state, the quantum dot emits energy corresponding to an energy band gap of the quantum dot. Therefore, if the size or material composition of the quantum dot is adjusted, the energy band gap can be adjusted to allow light emission from the ultraviolet region to the infrared region. Quantum dots are typically several nanometers in size. As mentioned above, as mentioned above, a vapor deposition method such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) may be used, and preferably a chemical wet synthesis method may be used. Since the quantum dots produced by the chemical wet synthesis method are dispersed in the solvent in the colloidal state, the quantum dots are separated from the solvent by centrifugation. The quantum dots separated as described above are dispersed in the metal-organic precursor solution prepared above. In this case, the quantum dots may be stabilized by bonding the organic-organic precursor of the metal-organic precursor.
본 발명은 상기와 같은 종래 기술의 문제점을 해결하기 위한 것으로서, 금속 나노입자에 금속산화물이 코팅된 코어쉘 구조의 금속산화물-금속 나노입자와 양자점을 극성용매에 분산시킨 분산된 슬러리를 LED 단위소자가 위치한 글루브에 충진시켜 제조된 LED 램프에 있어서, 상기 양자점은 1~5개의 서로 다른 입경을 갖는 양자점을 혼합하여 사용함으로써 LED로부터 방출되는 빛이 양자점을 포함하는 충진층을 지나면서 식물재배를 위한 광합성 및 엽록성의 효율을 높일 수 있는 파장으로 변환되어 방출되도록 하는 식물생장용 LED를 제공하는데 그 목적이 있다.The present invention is to solve the problems of the prior art as described above, the metal oxide-coated metal oxide-coated metal oxide-metal nanoparticles and a dispersed slurry in which the quantum dots dispersed in a polar solvent LED unit device In the LED lamp manufactured by filling in the groove is located, the quantum dot is a mixture of quantum dots having 1 to 5 different particle diameters by using the light emitted from the LED passing through the filling layer containing the quantum dots plant cultivation It is an object of the present invention to provide an LED for plant growth that is converted to a wavelength that can increase the efficiency of photosynthesis and chlorophyll.
본 발명은 양자점의 크기 또는 물질 조성을 조절하면 에너지 밴드 갭(band gap)을 조절할 수 있게 되어 자외선 영역에서부터 적외선 영역까지 전 영역에서 발광이 가하게 되는 점을 이용하여 2~ 5개의 서로 다른 입경분포를 갖는 양자점을 혼합하여 사용함으로써 LED 로부터 방출되는 빛이 양자점을 포함하는 충진층을 지나면서 식물재배를 위한 광합성 및 엽록성의 효율을 높일 수 있는 파장으로 변환되어 방출되도록 하여 자연광 대신 또는 자연광을 보충하여 식물에 조사하는 것을 특징으로 하는 식물생장용 LED를 제공한다.According to the present invention, the energy band gap can be adjusted by adjusting the size or material composition of the quantum dots, thereby having two to five different particle size distributions by using light emission from the ultraviolet region to the infrared region. By mixing quantum dots, the light emitted from the LED passes through the filling layer containing the quantum dots and is converted into a wavelength that can increase the efficiency of photosynthesis and chlorophyll for plant cultivation. It provides a plant growth LED, characterized in that to irradiate.
이하, 본 발명에 대하여 구체적으로 설명한다.EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated concretely.
본 발명은 서로 다른 입경분포를 갖는 1~5개의 양자점을 혼합한 슬러리를 LED 단위소자가 위치한 글루브(glove)에 충진시켜 경화시키는 것을 포함한다. The present invention includes filling and curing a slurry of 1 to 5 quantum dots having different particle size distributions into a glove in which an LED unit device is located.
이때, 상기 양자점은 코어쉘 구조의 양자점을 이용하는 것을 특징으로 하며, 양자점의 발광효율을 증가시키기 위해 금속 나노입자에 양자점을 코팅하여 제조할 수도 있다. 보다 상세하게 상기 양자점은 극성용매에 분산시켜 분산된 양자점을 고분자에 침지 교반하여 양자점이 포함된 슬러리를 제조하고, 이를 글루브(glove)에 충진시켜 LED 램프를 제조하거나, 양자점의 발광효율을 증가시키기 위해 극성용매에 양자점과 금속산화물을 교반하여 금속산화물층에 양자점이 코팅된 금속산화물-금속나노입자 양자점 슬러리를 제조하고, 이를 글루브(glove)에 충진시켜 LED 램프를 제조할 수 있게 된다.In this case, the quantum dot is characterized by using a quantum dot of the core shell structure, it may be prepared by coating the quantum dot on the metal nanoparticles to increase the luminous efficiency of the quantum dot. In more detail, the quantum dots are dispersed in a polar solvent to immerse and stir the dispersed quantum dots in a polymer to prepare a slurry including the quantum dots, and to fill the glove (glove) to produce an LED lamp, or increase the luminous efficiency of the quantum dots In order to prepare a metal oxide-metal nanoparticle quantum dot slurry coated with a quantum dot on the metal oxide layer by stirring the quantum dot and the metal oxide in a polar solvent, it is possible to produce a LED lamp by filling it in a glove (glove).
본 발명은 서로 다른 입경분포를 갖는 1~5개의 양자점을 혼합하기 때문에 LED로부터 방출되는 빛이 양자점을 포함하는 충진층을 지나면서 자연광에 가까운 파장으로 변환되어 방출될 수 있으며, 상기 파장을 조절하여 식물의 광합성 및 엽록성의 효율을 향상시켜 식물 성장에 도움을 줄 수 있고, 운용 비용 및 제어가 용이하여 범용화가 가능하여 식물생장용으로 적합하다.According to the present invention, since 1 to 5 quantum dots having different particle size distributions are mixed, light emitted from the LED may be converted into a wavelength close to natural light while passing through the filling layer including the quantum dots, and may be emitted by adjusting the wavelength. It can help plant growth by improving the photosynthesis and chloroplast efficiency of plants, and it is suitable for plant growth because it can be widely used due to easy operation cost and control.
본 발명에 따른 서로 다른 입경분포를 갖는 양자점은 450~700nm의 PL(photoluminescence) 피크의 범위인 것을 특징으로 한다. 상기 범위의 양자점을 사용하면 식물의 엽록소 작용 및 광합성 작용을 향상, 병해충 방제 등 식물생장에 있어서 복합적 작용으로 생장률을 최대한 향상시킬 수 있는 특성이 있으며, 보다 바람직하게는 450, 510, 610, 670nm의 범위를 포함하는 양자점을 4개 혼합하는 것이 좋다. Quantum dots having different particle size distributions according to the present invention are characterized in that the range of 450 ~ 700nm PL (photoluminescence) peak. Using the quantum dots in the above range has the characteristics of improving the chlorophyll action and photosynthesis action of the plant, the maximum growth rate by the complex action in plant growth, such as pest control, more preferably 450, 510, 610, 670nm It is good to mix four quantum dots including a range.
상기 양자점의 직경은 1~20nm, 보다 바람직하게는 3~10nm인 것이 열적안정성 및 발광효율을 극대화할 수 있어 좋다.The diameter of the quantum dot is 1 ~ 20nm, more preferably 3 ~ 10nm may be able to maximize the thermal stability and luminous efficiency.
본 발명의 양자점은 CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe와 같은 II-VI족 화합물 반도체나노결정, GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP, InAs와 같은 III-V족 화합물 반도체 나노결정 또는 이들의 혼합물로 이루어진 군에서 선택되거나; CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS,CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HggZnTe, CdZnSeS, CdZnSeTe, CdZnSTe,CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe 및 HgZnSTe로 이루어진 군에서 선택되거나; 또는 GaNP,GaNAs, GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs, GaInNP, GaInNAs,GaInPAs, InAlNP, InAlNAs, InAlPAs로 이루어진 복합물군에서 선택되는 것을 특징으로 한다.Quantum dots of the present invention are II-VI compound semiconductor nanocrystals such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP, InAs Group III-V compound semiconductor nanocrystals such as or a mixture thereof; CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HggZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, Is selected from the group consisting of HgZnSeTe and HgZnSTe; Or selected from a complex group consisting of GaNP, GaNAs, GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs, GaInNP, GaInNAs, GaInPAs, InAlNP, InAlNAs, InAlPAs.
상기 양자점은 극성용매에 분산시킨 분산된 슬러리를 이용한다. 이때, 극성용매는 물 또는 탄소수 1~5개의 알코올이 바람직하며, 물 또는 탄소수 1~3개의 알코올이 보다 바람직하다. The quantum dot uses a dispersed slurry dispersed in a polar solvent. At this time, the polar solvent is preferably water or alcohol having 1 to 5 carbon atoms, more preferably water or alcohol having 1 to 3 carbon atoms.
상기 극성용매 및 양자점의 혼합비는 용매 100중량부에 대하여, 0.01~10중량부가 바람직하며, 0.1~1중량부를 함유하는 것이 보다 바람직하다.0.01-10 weight part is preferable with respect to 100 weight part of solvent, and, as for the mixing ratio of the said polar solvent and a quantum dot, it is more preferable to contain 0.1-1 weight part.
본 발명에서의 금속산화물-금속 나노입자의 의미는 금속 나노입자상에 금속산화물이 코팅된 물질을 의미한다. 상기 금속 나노입자에 금속산화물이 코팅된 금속산화물-금속 나노입자를 제조하는 단계에서 사용되는 금속 나노입자의 크기는 5~50 nm이고, 바람직하게는 10~30 nm이다. 상기 범위의 금속 나노입자 크기를 사용함으로써 LED 칩에서 나오는 빛이 양자점을 지나면서 빛이 다시 칩 안쪽으로 들어가는 반사광 등을 다시 바깥쪽으로 빼내어 빛을 증가시키기가 좋다.Metal oxide-metal nanoparticles in the present invention means a material in which a metal oxide is coated on the metal nanoparticles. The size of the metal nanoparticles used in the preparation of the metal oxide-metal nanoparticles coated with the metal oxide on the metal nanoparticles is 5 to 50 nm, preferably 10 to 30 nm. By using the metal nanoparticle size in the above range, the light emitted from the LED chip passes through the quantum dots, and the reflected light, etc., which enters the chip back into the chip, may be extracted outward to increase the light.
본 발명에서 사용되는 금속 나노입자는 금, 팔라듐, 백금, 니켈, 코발트, 철, 루테늄, 은, 구리, 카드뮴, 은(Ag) 또는 이들을 포함하는 혼합재료로 이루어진 군에서 선택되며, 바람직하게는 금이 바람직하다. 이들 금속 나노입자의 크기는 5~50nm인 것이 바람직하다. 상기 범위의 금속 나노입자의 크기를 사용하는 것은 LED 칩에서 나오는 빛이 양자점을 지나면서 빛이 다시 칩 안쪽으로 들어가는 반사광 등을 다시 바깥쪽으로 빼내어 빛을 증가시키기가 좋기 때문이다.The metal nanoparticles used in the present invention are selected from the group consisting of gold, palladium, platinum, nickel, cobalt, iron, ruthenium, silver, copper, cadmium, silver (Ag) or mixed materials containing them, preferably gold This is preferred. It is preferable that these metal nanoparticles are 5-50 nm in size. The size of the metal nanoparticles in the above range is because the light from the LED chip passes through the quantum dots, and the reflected light, etc., which enters the chip back into the chip, may be extracted again to the outside to increase the light.
또한 얻어진 금속산화물 코팅은 그 두께가 1~50nm가 적당하며, 10~30nm인 것이 보다 바람직하다. 상기 범위의 금속산화물 두께를 사용함으로써 구 표면의 코팅이 제대로 될 수 있다. Moreover, the thickness of the obtained metal oxide coating is 1-50 nm, and it is more preferable that it is 10-30 nm. By using the metal oxide thickness in the above range, the surface of the sphere can be properly coated.
한편 상기 금속산화물의 종류는 실리카, 티타니아, ZnO, AlO3, 제올라이트 또는 이들의 혼합물이 적당하며, 보다 바람직하게는 실리카, 제올라이트, ZnO이 바람직하고 더욱 바람직하게는 실리카를 사용할 수 있다.Meanwhile, the metal oxide may be silica, titania, ZnO, AlO 3 , zeolite, or a mixture thereof. More preferably, silica, zeolite and ZnO may be used, and still more preferably silica may be used.
상기 금속나노입자의 표면은 고분자 재료로 코팅한 후, 염기성 수용액 및 금속산화물 전구체로 처리하는 것을 포함하여 이루어진다. The surface of the metal nanoparticles may be coated with a polymer material and then treated with a basic aqueous solution and a metal oxide precursor.
본 발명에서는 금속 나노입자에 수용성 고분자를 코팅하고 이를 물 또는 유기용매하에서 염기성 용액과 금속산화물 전구체를 사용하여 반응함으로써 코팅을 진행하였다. 금속 나노입자에 코팅되는 상기 금속 산화물 층의 두께는 도입되는 금속산화물 전구체의 양과 염기성 수용액의 양에 의해 조절될 수 있다. 바람직한 금속산화물의 전구체는 실리카는 TEOS, 티타니아는 티타니움, 이소프로폭사이드 등과 같은 금속 알콕사이드가 적당하나, 이에 한정하지 않는다.In the present invention, the coating was performed by coating a water-soluble polymer on the metal nanoparticles and reacting the same with a basic solution and a metal oxide precursor in water or an organic solvent. The thickness of the metal oxide layer coated on the metal nanoparticles can be controlled by the amount of the metal oxide precursor introduced and the amount of the basic aqueous solution. Preferred metal oxide precursors include, but are not limited to, metal alkoxides such as silica as TEOS, titania as titanium, isopropoxide and the like.
본 발명에서 금속과 양자점의 중량비는 1:10 내지 1:500 이 바람직하며, 더욱 바람직하게는 1: 20 내지 1: 50 이다. 상기 금속과 양자점의 중량비의 범위를 통해 가장 휘도가 증가하는 효과가 있다.In the present invention, the weight ratio of the metal to the quantum dots is preferably 1:10 to 1: 500, more preferably 1:20 to 1:50. The brightness is most increased through the range of the weight ratio of the metal and quantum dots.
본 발명은 일정 범위의 크기분포의 양자점들을 금속산화물층에 코팅하여 LED용 나노입자군를 제조하고, 상기 나노입자군에 포함된 양자점과는 다른 범위의 크기분포를 갖는 양자점들을 금속 산화물층에 코팅함으로써 양자점의 크기가 서로 다른 나노입자군 또는 다른 금속 나노입자군들을 제조하여 혼합하여 슬러리화한다.The present invention provides a nanoparticle group for LEDs by coating a quantum dots of a range of size distribution on the metal oxide layer, by coating a quantum dots having a range of size distribution different from the quantum dots included in the nanoparticle group on the metal oxide layer Nanoparticle groups or metal nanoparticle groups having different sizes of quantum dots are prepared, mixed and slurried.
상기 슬러리를 LED 글루브에 충진시켜 경화시킴으로써 식물재배용을 적합한 발광 특성을 갖는 LED 램프를 제조할 수 있다. 이와 마찬가지로 다른 양태로, 상기 나노입자군들의 종류는 1~5개의 서로 다른 크기분포 범위를 가질 수 있으며, 바람직하게는 3~5개의 서로 다른 입경 분포 범위를 가질 수 있다. The slurry may be filled in LED grooves and cured to produce LED lamps having suitable luminescence properties for plant cultivation. Likewise, in another embodiment, the nanoparticle groups may have 1 to 5 different size distribution ranges, and preferably 3 to 5 different particle size distribution ranges.
상기 크기분포를 다르게 한 양자점을 무기산화물에 코팅하여 제조되는 나노입자들을 사용하여 제조되는 LED 램프는 사용자가 원하는 상태의 발광 특성을 제어할 수 있다. 본 발명에서는 식물 성장을 위한 발광특성을 갖도록 510nm PL 피크를 갖는 양자점을 금속산화물층에 코팅하여 나노입자군A를 제조하고, 550nm PL 피크를 갖는 양자점을 금속산화물층에 코팅하여 나노입자군B를 제조하고, 610nm PL 피크를 갖는 양자점을 금속산화물층에 코팅하여 나노입자군C를 제조하고, 670nm PL 피크를 갖는 양자점을 금속산화물층에 코팅하여 나노입자군D를 제조하여, 이를 실리카 슬러리에 혼합하여 450nm의 PL 피크를 나타내는 청색 LED램프에 충진하여 백색 LED를 제조하는 재료로 사용할 수 있다. 상기 조합으로 450nm대의 광합성 및 엽록소 작용 최대, 510nm, 610nm대의 해충방제, 550nm대의 흰색 발광 구현, 670nm대의 발아촉진 및 엽록소 작용 최대의 효과를 얻을 수 있다.The LED lamp manufactured by using nanoparticles prepared by coating the quantum dots having different size distributions on the inorganic oxide may control light emission characteristics of a user's desired state. In the present invention, nanoparticle group A is prepared by coating a metal oxide layer with a quantum dot having a 510 nm PL peak to have light emission characteristics for plant growth, and nanoparticle group B is coated by coating a metal oxide layer with a quantum dot having a 550 nm PL peak. To prepare a nanoparticle group C by coating a metal oxide layer with a quantum dot having a 610 nm PL peak, prepare a nanoparticle group D by coating a metal oxide layer with a quantum dot having a 670 nm PL peak, and mix it with a silica slurry. It can be used as a material for producing a white LED by filling a blue LED lamp showing a PL peak of 450nm. The combination of the photosynthesis and chlorophyll action maximum 450nm band, 510nm, 610nm pest control, 550nm white light emission, 670nm germination and chlorophyll action maximum effect can be obtained.
상기의 본 발명에 따른 식물생장용 LED는 자연광과 유사한 특성에 따라 자연광을 대체 또는 자연광을 보충하여 식물성장을 촉진할 수 있으며, 운용상 비용 및 제어의 용이한 장점이 있을 뿐만 아니라, 자연광이 요구되는 친환경 조명에 적용이 가능하여 다양한 분야에 응용될 수 있다.The plant growth LED according to the present invention can promote plant growth by replacing natural light or supplementing natural light according to characteristics similar to natural light, and there is an advantage in operating cost and control, and natural light is required. It can be applied to environmentally friendly lighting that can be applied to various fields.
도 1은 본 발명에 따른 실제 합성된 각 파장대별 양자점을 나타낸 것이다.
도 2는 본 발명에 따른 양자점 중 4가지 파장을 혼합하여 측정한 PL 데이터를 나타낸 것이다.
도 3은 본 발명에 따른 453nm의 파장을 갖는 LED에 혼합된 양자점을 봉지재와 함께 혼합하여 패키지를 제작한 것을 나타낸 것이다.
도 4는 본 발명에 따른 LED의 실제 불이 들어오는 모습을 나타낸 것이다.
도 5는 본 발명에 따른 LED의 PL 데이터를 측정하여 나타낸 것이다.1 shows quantum dots for each wavelength band actually synthesized according to the present invention.
2 shows PL data measured by mixing four wavelengths among quantum dots according to the present invention.
Figure 3 shows that the package was prepared by mixing the quantum dots mixed in the LED having a wavelength of 453nm according to the present invention with the sealing material.
Figure 4 shows the appearance of the actual light of the LED according to the invention.
Figure 5 shows the measured PL data of the LED according to the present invention.
이하, 본 발명을 실시예에 의해 상세히 설명한다.Hereinafter, the present invention will be described in detail by way of examples.
단, 하기 실시예는 본 발명을 예시하는 것일 뿐, 본 발명의 내용이 하기 실시예에 의해 한정되는 것은 아니다.
However, the following examples are merely to illustrate the invention, but the content of the present invention is not limited by the following examples.
[양자점의 제조][Manufacture of quantum shop]
CdSe 코어와 ZnS쉘 구조를 갖는 양자점 나노결정을 하기와 같은 방법으로 제조하였다.Quantum dot nanocrystals having a CdSe core and a ZnS shell structure were prepared by the following method.
카드뮴 2,4-팬타다이오네이트 1.5g, 올레인 산 2g(Oleic aicd, 이하 OA라 칭함), Squalane(or 1-Ocatadecene(이하 ODE라 칭함)) 50ml을 환류 콘덴서가 설치된 100㎖ 삼구플라스크에 넣고, 질소분위기에서 반응온도를 150℃까지 증가시켰다. 이때 혼합물이 잘 섞이도록 1150rpm으로 교반하였다. 이후 100℃까지 하온시킨 뒤 진공분위기에서 이차반응을 시킨다. 반응이 끝나면 25℃까지 하온시킨 뒤 올레이아민(Oleylamine, 이하 OLA라 칭함) 20ml를 넣어 최종 카드뮴전구체 50ml를 만들었다. 1.5 g of cadmium 2,4-pantadionate, 2 g of oleic acid (hereinafter referred to as OA) and 50 ml of Squalane (or 1-Ocatadecene (hereinafter referred to as ODE)) were placed in a 100 ml three-necked flask equipped with a reflux condenser. The reaction temperature was increased to 150 ° C. in a nitrogen atmosphere. At this time, the mixture was stirred at 1150 rpm to mix well. After the temperature is lowered to 100 ° C., a secondary reaction is performed in a vacuum atmosphere. After the reaction, the reaction mixture was cooled to 25 ° C, and 20 ml of oleamine (Oleylamine, hereinafter referred to as OLA) was added to make 50 ml of a final cadmium precursor.
이와 별도로, 질소 분위기에서 Se 분말 2.5~4.5g 을 순도 90%의 트리옥틸포스핀(Trioctylphosphine, 이하, TOP이라 칭함)에 녹여서 Se 농도 2M 인 Se-TOP 착물용액 5ml를 만들었다. Separately, 2.5 to 4.5 g of Se powder was dissolved in trioctylphosphine (Trioctylphosphine, hereinafter referred to as TOP) having a purity of 90% in a nitrogen atmosphere, thereby preparing 5 ml of a Se-TOP complex solution having a Se concentration of 2M.
만들어진 Se-TOP에 Squalane(or 1-Ocatadecene(이하 ODE라 칭함)) 50ml을 환류 콘덴서가 설치된 100㎖ 삼구플라스크에 넣어 셀레늄전구체 55ml를 준비하였다. 50 ml of selenium precursor was prepared by putting 50 ml of Squalane (or 1-Ocatadecene (hereinafter referred to as ODE)) into a 100 ml three-necked flask equipped with a reflux condenser.
징크 디에칠디치오카르바메이트(Zinc diethyldithiocarbamate) 3g에 TOP 20ml와 OLA 5ml 를 삼구플라스크에 넣었다. 이때 혼합물이 잘 섞이도록 1150rpm으로 교반하여 징크설퍼(ZnS) 전구체를 준비하였다.In 3 g of zinc diethyldithiocarbamate, TOP 20 ml and 5 ml OLA were placed in a three-necked flask. At this time, the mixture was stirred at 1150rpm to prepare a zinc sulfide (ZnS) precursor.
위에서 준비된 카드뮴 전구체와 셀레늄 전구체를 혼합하여 주입하고 300℃에서 10분간 반응하여 500~630nm의 PL peak을 갖는 CdSe 코어(Core)로 반응시켰다.The cadmium precursor prepared above and the selenium precursor were mixed and injected, and reacted at 300 ° C. for 10 minutes to react with a CdSe core having a PL peak of 500˜630 nm.
여기서 얻어진 CdSe 코어(Core) 100ml와 징크설퍼(ZnS) 전구체 25ml를 혼합하여 반응온도 120~150℃에서 천천히 반응시켜 510~640nm의 PL peak을 갖는 CdSe 코어 ZnS 쉘을 갖는 양자점을 제조하였다(도 1). 100 ml of the CdSe core obtained here and 25 ml of a zinc sulfer (ZnS) precursor were mixed and reacted slowly at a reaction temperature of 120 to 150 ° C. to prepare a quantum dot having a CdSe core ZnS shell having a PL peak of 510 to 640 nm (FIG. 1). ).
최종 배출된 반응물 120ml를 아세톤 100ml과 부탄올 100ml을 부가하여 원심 분리하였다. 원심 분리된 침전물을 제외한 용액의 상등액은 버리고, CdSe 코어(Core)와 ZnS 쉘(Shell) 구조의 나노결정을 갖는 침전물에 헥산 30ml을 부가하여 분산시켰다.
120 ml of the finally discharged reactant was centrifuged by adding 100 ml of acetone and 100 ml of butanol. The supernatant of the solution except for the centrifuged precipitate was discarded, and 30 ml of hexane was added and dispersed in a precipitate having nanocrystals having a CdSe core and a ZnS shell structure.
[실시예 1]Example 1
상기와 같은 방법으로 제작된 양자점 중 PL peak이 512nm, 552nm, 608nm, 638nm인 양자점을 각각 0.1mg씩 혼합하여 PL을 측정해 본 결과 도 2와 같았다. 각 파장대 양자점의 양자효율(quantum yield)이 40~70%로 차이가 있어서 같은 무게로 혼합하였으나 PL intensity의 비율은 약 0.6:0.87:1:0.83로 차이를 나타내는 것을 알 수 있다.Of the quantum dots produced by the above method, PL peaks of 512 nm, 552 nm, 608 nm, and 638 nm were measured by mixing 0.1 mg of quantum dots, respectively, as shown in FIG. 2. The quantum yield of each quantum dot (quantum dot) is 40 ~ 70%, and the same weight is mixed, but the PL intensity ratio is about 0.6: 0.87: 1: 0.83.
상기와 같이 혼합된 양자점을 453nm의 발광파장을 갖는 LED 칩 위에 도포(dispensing)하고, 120℃를 유지하는 오븐에서 1시간 동안 경화시킴으로써 CdSe/ZnS 나노결정을 발광체로 사용한 LED 패키지를 도 3과 같이 제조하였다. 이렇게 제조된 다이오드에 약 20mA정도의 전류가 흐르도록 하면, 도 4와 같이 흰색 빛을 발광 하였다.The LED package using the CdSe / ZnS nanocrystals as a light emitter by dispersing the mixed quantum dots on the LED chip having a light emission wavelength of 453 nm and curing for 1 hour in an oven maintained at 120 ° C. as shown in FIG. 3. Prepared. When a current of about 20mA flows through the diode thus manufactured, white light is emitted as shown in FIG. 4.
이렇게 제조된 발광소자의 PL data를 보면 blue의 빛을 내는 453nm 파장의 LED chip 파장과 함께 양자점의 각 파장이 함께 나타나는 것을 확인할 수 있었다(도 5).Looking at the PL data of the light emitting device manufactured as described above, it was confirmed that each wavelength of the quantum dot appeared together with the LED chip wavelength of 453 nm wavelength emitting blue light (FIG. 5).
Claims (10)
LED for plant growth, comprising curing the slurry of 1 to 5 quantum dots having a different particle size distribution in the glove (glove) where the LED unit element is located.
The quantum dot is a plant growth LED comprising a metal oxide-coated metal oxide-coated metal oxide-metal nano-particles and a quantum dot dispersed in a polar solvent in the metal nano-particles coated with a metal oxide-metal nanoparticles.
상기 서로 다른 입경분포를 갖는 양자점은 450~700nm의 PL(photoluminescence) 피크의 범위인 것을 특징으로 하는 식물생장용 LED.
The method of claim 1,
The quantum dot having the different particle size distribution is a plant growth LED, characterized in that the range of 450 ~ 700nm PL (photoluminescence) peak.
상기 양자점이 CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe와 같은 II-VI족 화합물 반도체나노결정, GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP, InAs와 같은 III-V족 화합물 반도체 나노결정 또는 이들의 혼합물로 이루어진 군에서 선택되거나; CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS,CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HggZnTe, CdZnSeS, CdZnSeTe, CdZnSTe,CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe 및 HgZnSTe로 이루어진 군에서 선택되거나; 또는 GaNP,GaNAs, GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs, GaInNP, GaInNAs,GaInPAs, InAlNP, InAlNAs, InAlPAs로 이루어진 복합물군에서 선택되는 식물생장용 LED.
The method of claim 1,
The quantum dots are II-VI compound semiconductor nanocrystals such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP, InAs Group III-V compound semiconductor nanocrystals or mixtures thereof; CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HggZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, Is selected from the group consisting of HgZnSeTe and HgZnSTe; Or a plant growth LED selected from the group consisting of GaNP, GaNAs, GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs, GaInNP, GaInNAs, GaInPAs, InAlNP, InAlNAs, InAlPAs.
상기 양자점의 크기는 1~20nm인 식물생장용 LED.
The method of claim 1,
The size of the quantum dot is 1 ~ 20nm plant growth LED.
상기 금속 나노입자의 크기는 5 ~ 50 nm인 식물생장용 LED.
The method of claim 2,
The metal nanoparticles have a size of 5 to 50 nm for plant growth.
상기 금속 나노입자는 금, 팔라듐, 백금, 니켈, 코발트, 철, 루테늄, 은, 구리, 카드뮴, 은(Ag) 또는 이들을 포함하는 혼합재료로 이루어진 군에서 선택되는 식물생장용 LED.
The method of claim 2,
The metal nanoparticles are selected from the group consisting of gold, palladium, platinum, nickel, cobalt, iron, ruthenium, silver, copper, cadmium, silver (Ag) or a mixed material containing them.
상기 금속 산화물의 두께는 1 ~50 nm이고, 실리카, 티타니아, ZnO, AlO3, 제올라이트 또는 이들의 혼합물인 식물생장용 LED.
The method of claim 2,
The metal oxide has a thickness of 1 to 50 nm, silica, titania, ZnO, AlO3, zeolite or a mixture for plant growth LED.
코어쉘 구조의 금속산화물-금속 나노입자는 금속나노입자의 표면을 고분자 재료로 코팅한 후, 염기성 수용액 및 금속산화물 전구체로 처리하는 식물생장용 LED.
The method of claim 2,
Metal oxide-metal nanoparticles having a core shell structure are coated with a polymer material on the surface of the metal nanoparticles, and then treated with a basic aqueous solution and a metal oxide precursor.
금속산화물-금속 나노입자와 양자점의 비는 전이금속과 양자점 기준으로 1:10 내지 1:500 중량비인 식물생장용 LED.
The method of claim 2,
The ratio of the metal oxide-metal nanoparticles to the quantum dots is a plant growth LED having a ratio of 1:10 to 1: 500 by weight based on the transition metal and the quantum dots.
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WO2013150388A2 (en) * | 2012-04-05 | 2013-10-10 | Nanoco Technologies, Ltd. | Quantum dot led's to enhance growth in photosynthetic organisms |
CN103032741A (en) * | 2012-12-26 | 2013-04-10 | 杭州纳晶科技有限公司 | LED (light-emitting diode) plant growth promoting lamp |
WO2014201329A1 (en) * | 2013-06-14 | 2014-12-18 | Solartrack, Llc | Apparatuses, systems and methods for enhancing plant growth |
WO2014205438A1 (en) | 2013-06-21 | 2014-12-24 | Venntis Technologies LLC | Light emitting device for illuminating plants |
US9356204B2 (en) | 2013-12-05 | 2016-05-31 | Vizio Inc | Using quantum dots for extending the color gamut of LCD displays |
CN103840053B (en) * | 2014-03-14 | 2016-08-17 | 东南大学 | Light emitting diode with quantum dots device that surface plasma strengthens and preparation method thereof |
CN104748073A (en) * | 2014-12-29 | 2015-07-01 | 李欣澄 | Full spectrum suitable for LED plant growing compound light |
KR101730965B1 (en) | 2016-11-30 | 2017-04-27 | 주식회사 쉘파스페이스 | Light emitting apparatus having variable wavelengths using quantum dots for plant cultivation |
US11218644B2 (en) | 2016-11-30 | 2022-01-04 | Sherpa Space Inc. | Image-based component measurement system using light emitting device that outputs variable wavelength and method thereof, and method of plant cultivation method using the same |
KR101795443B1 (en) | 2017-06-14 | 2017-11-09 | 주식회사 쉘파스페이스 | Sunlight converting apparatus having a wavelength converting film using quantum dots and a method of plant cultivating using the same |
CN109599467B (en) * | 2018-12-01 | 2020-09-29 | 王星河 | Semiconductor light-emitting element |
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