CN103032741A - LED (light-emitting diode) plant growth promoting lamp - Google Patents
LED (light-emitting diode) plant growth promoting lamp Download PDFInfo
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Abstract
The invention provides an LED (light-emitting diode) plant growth promoting lamp, which comprises a base, an LED light source and a lampshade, wherein the inner surface and/or the outer surface of the lampshade are/is provided with quantum dot material layers, and the emission spectrum band of light rays emitted by the LED light source after passing through the quantum dot material layers comprises two or more than two emission peaks within the range of 400-1100nm. According to the LED plant growth promoting lamp, the positions of the emission peaks of the emission spectrum band can be conveniently adjusted within the all band range of 400-1100nm through the selection of quantum dot material composition elements and the adjustment of grain sizes. Compared with the conventional light emitting material such as rare earth phosphors, the quantum dot material has the characteristics that the peak position of the emission spectrum band is adjustable, and the peak width at half height is smaller so as to help the modulation of a special spectrum; and only one LED light source is needed, so that complex designs of a circuit and a driving power source are avoided, emitted light rays are uniform, and the phenomenon of incomplete light mixing is avoided.
Description
Technical field
The present invention relates to the LED field of light fittings, in particular to a kind of LED fosterage of plants lamp.
Background technology
Illumination is the essential condition of plant growth, but the intensity of sunshine geographical latitude, season and weather conditions and change, thus tend to occur the illumination deficiency, so that illumination condition does not reach the situation that plant growth needs.And different wave length has different impacts to plant growth, and shown in Fig. 1 and table 1, wavelength has significant facilitation at the blue light of 400～520nm, the ruddiness of 610～720nm and the far-red light of 720～1100nm to photosynthesis of plant.
Table 1
| Spectral region | Impact on plant physiology |
| 280~315nm | Little on the physiology and morphology impact |
| 315~400nm | Chlorophyll absorbs few, affects the photoperiod effect, can stop the |
| 400~520nm | Chlorophyll and carotenoid assimilation ratio are maximum, and photosynthesis is had the greatest impact |
| 520~610nm | The absorption of pigment is few, and is little on the physiology and |
| 610~720nm | The chlorophyll absorptivity is low, and photosynthesis and photoperiod are had significant impact |
| 720~1100nm | Absorptivity is low, and stimulating cellular growth is bloomed and germination in impact |
| Greater than 1100nm | Be converted into heat |
For the situation of illumination deficiency, the conventional lamp that light filling uses mainly is fluorescent lamp, metal halide lamp, high-pressure mercury lamp and incandescent lamp.The spectrum of these conventional light source is selected to the adaptability of light according to human eye, and its spectrum contains many unnecessary wavelength, and is less to the growth promotion of plant, also has simultaneously many shortcomings such as energy consumption height, life-span weak point, easy fragmentation and mercurous environmental pollution.
The LED(Light-Emitting Diode) light fixture is present up-to-date technology, by III-V compounds of group, such as solid semiconductor light sources such as GaAs (GaAs), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide) as luminescent material, form PN junction, when two ends add forward voltage, carrier in the semiconductor occurs compound, emits superfluous energy and excitation photon emission visible light.The LED light fixture as the 4th generation the novel illumination light source, have energy-conserving and environment-protective, safe and reliable, long service life, the response time is short, volume is little, caloric value is few, be easy to disperse or make up many significant advantage that are different from other electric light sources such as control.LED fosterage of plants lamp, by blue light and red-light LED light-source encapsulation are obtained light fixture together, the proportion control spectrum change of, blue led light source red by regulating.
Correlative study shows, except containing a large amount of chlorophyll, carotenoid and anthocyanidin, also contains the photosensitive acceptor of some trace in the plant, for example phytochrome, cryptochrome and ultraviolet light B acceptor.Wherein, phytochrome is a kind of photosensitive acceptor most important in the plant, that study the most deeply, and it is absorbed with unkehr effect to ruddiness and far-red light.Phytochrome has two kinds of forms that can transform mutually: the Pfr type (maximum absorption band is at the 730nm in far-red light district) of the Pr type of absorptive red light (R) (maximum absorption band is at the 660nm of red light district) and absorption far-red light (FR), Pr is physiology passivation type, and Pfr is the physiological activation type.The absorption spectrum of Pr and Pfr has considerable overlapping at visible light wave range, therefore under natural lighting, exist simultaneously the phytochrome of Pfr type and two kinds of forms of Pr type in the plant, Pfr occupies certain ratio (Pfr/Ptot) in phytochrome total amount (Ptot=Pr+Pfr), this ratio is 0.025 under saturated far-red light, be 0.6 under saturated white light, when this ratio changes, can cause the physiological change in the plant.
The forties in 20th century, take the quantum yield of chlorella as the investigation of materials different light medium, although find still can be absorbed by chlorophyll greater than the far-red light of 680nm, quantum yield sharply descends, and this phenomenon is called as the red drop phenomenon.Nineteen fifty-seven, Emerson is observed chlorella and add a bit slightly light of short wavelength (for example 650nm) when being shone with far-red light, and then quantum yield increases, and is more taller than the independent summation of shining of the light of these two kinds of wavelength.The phenomenon that this light of adding shorter wavelength outside the long wave far-red light can promote photosynthetic efficiency greatly to improve is called as two gain of light effects, or is Emerson enhancement effect.Related experiment evidence and theoretical research prove that all far-red light has quite high using value in growing process.
The LED fosterage of plants lamp of prior art, owing to be combination red, blue led light source only, when production is suitable for the light fixture of different plants need different wavelengths of light, need to find the full-spectrum LED light source of different-waveband between 400～1000nm, this is difficult to realize in the actual production of light fixture manufacturer, particularly can't realize the far-red light led light source technically at present, even realize that also cost is unusually expensive; And the led light source forward voltage VF value of different-waveband is all different, and this has just caused the circuit design of LED light fixture will very complex, and reliability reduces, and is unfavorable for large-scale production, is difficult to simultaneously find the power drives of coupling; In addition, when several red LED light sources and the combination of blue led light source, can be one section red, one section indigo plant at the light that does not have to send in the complete mixed light situation, actual impinging upon on the plant is a part of branches and leaves ruddiness, a part of branches and leaves blue light, only be simple two kinds of coloured light but not the light of uniformity, as three kinds of coloured light of the RGB of usually seeing, rather than the white light of uniformity, such irradiation can not satisfy the needs of plant growth on plant.
For the above-mentioned shortcoming of the LED fosterage of plants lamp of prior art, not yet find suitable solution at present.
Summary of the invention
The invention provides a kind of LED fosterage of plants lamp and preparation method thereof, luminous to solve at least regulating of 400～1100nm all band scope, particularly far-red light is luminous, so that the problem that satisfies the required specificity spectrum of plant growth photosynthesis to be provided.
According to an aspect of the present invention, a kind of LED fosterage of plants lamp is provided, comprise pedestal, led light source, lampshade, wherein, the inner surface of lampshade and/or outer surface are provided with the quanta point material layer, and the emission spectrum wave band of the light that led light source sends after by the quantum dot material layer comprises the emission peak in two or more 400～1100nm scopes.
Further, the emission spectrum wave band comprises that at least one scope is at the emission peak and the emission peak of at least one scope at 720～1100nm far-red light wave band of 400～720nm visible light wave range.
Further, the quanta point material in the quanta point material layer comprises II-VI family, III-V family, IV-VI family, I-III-VI family and/or II-III-VI family quantum dot.
Further, the quanta point material in the quanta point material layer comprises: by being selected from any element among the element Zn of II family, Cd, the Hg and being selected from the II-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms; By being selected from any element among the element Ge of IV family, Sn, the Pb and being selected from the IV-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms; By being selected from any element among iii group element Al, Ga, the In and being selected from the III-V family quantum dot that any element among V group element N, P, As, the Sb forms; By being selected from I family element Cu, any element among the Ag is selected from any element among iii group element Al, Ga, the In and is selected from the I-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms; And/or by being selected from the element Zn of II family, any element among Cd, the Hg is selected from any element among iii group element Al, Ga, the In and is selected from the II-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms.
Further, quanta point material in the quanta point material layer is nano-crystal with core-shell structure, wherein, the nucleus of nano-crystal with core-shell structure comprises: by being selected from any element among the element Zn of II family, Cd, the Hg and being selected from the II-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms; By being selected from any element among the element Ge of IV family, Sn, the Pb and being selected from the IV-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms; By being selected from any element among iii group element Al, Ga, the In and being selected from the III-V family quantum dot that any element among V group element N, P, As, the Sb forms; By being selected from I family element Cu, any element among the Ag is selected from any element among iii group element Al, Ga, the In and is selected from the I-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms; And/or by being selected from the element Zn of II family, any element among Cd, the Hg is selected from any element among iii group element Al, Ga, the In and is selected from the II-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms; The shell of nano-crystal with core-shell structure comprises: by being selected from any element among the element Zn of II family, Cd, the Hg and being selected from the II-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms; By being selected from any element among the element Ge of IV family, Sn, the Pb and being selected from the IV-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms; By being selected from any element among iii group element Al, Ga, the In and being selected from the III-V family quantum dot that any element among V group element N, P, As, the Sb forms; By being selected from I family element Cu, any element among the Ag is selected from any element among iii group element Al, Ga, the In and is selected from the I-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms; And/or by being selected from the element Zn of II family, any element among Cd, the Hg is selected from any element among iii group element Al, Ga, the In and is selected from the II-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms.
Further, the quanta point material in the quanta point material layer is doping semi-conductor nanocrystalline, and wherein, the doped chemical of doping semi-conductor nanocrystalline comprises Cu, Mn, Fe, Co and/or rare earth element; The fertile material of doping semi-conductor nanocrystalline comprises: by being selected from any element among the element Zn of II family, Cd, the Hg and being selected from the II-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms; By being selected from any element among the element Ge of IV family, Sn, the Pb and being selected from the IV-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms; By being selected from any element among iii group element Al, Ga, the In and being selected from the III-V family quantum dot that any element among V group element N, P, As, the Sb forms; By being selected from I family element Cu, any element among the Ag is selected from any element among iii group element Al, Ga, the In and is selected from the I-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms; And/or by being selected from the element Zn of II family, any element among Cd, the Hg is selected from any element among iii group element Al, Ga, the In and is selected from the II-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms.
Further, the quanta point material in the quanta point material layer has different-grain diameter.
Further, led light source is blue-ray LED light source or royal purple light led light source, and emission wavelength is 350～470nm; Also include the yellow-green fluorescence powder in the quanta point material layer.
Use the LED fosterage of plants lamp of technical scheme of the present invention, by inner surface and/or outer surface at lampshade the quanta point material layer is set, the primary light that led light source sends shines on the quanta point material layer on the lampshade, quanta point material in the quanta point material layer absorbs the energy of primary light and is excited, and then launch complex light, the spectral band of this complex light comprises the emission peak in the full spectral band scope of two or more 400～1100nm, can satisfy the specificity spectrum demand of plant growth; Traditional luminescent material such as quanta point material and fluorescent RE powder etc. is compared, and not only the peak position of emission spectrum wave band is adjustable, and half-peak breadth is also narrow, and is very favourable for the modulation of the required specificity spectrum of plant growth; By the selection of quanta point material component and the adjusting of particle diameter, can realize easily the adjusting of emission peak positions in 400～1100nm all band scope of emission spectrum wave band; Only use a kind of led light source that the adjustable emission spectrum of peak position in all band scope just can be provided, avoided the somewhat complex design of circuit and driving power, but also can be so that the light uniformity that LED fosterage of plants lamp sends avoids occurring the incomplete phenomenon of mixed light.
Description of drawings
The Figure of description that consists of the application's a part is used to provide a further understanding of the present invention, and illustrative examples of the present invention and explanation thereof are used for explaining the present invention, do not consist of improper restriction of the present invention.In the accompanying drawings:
Fig. 1 shows light wavelength to the schematic diagram of the impact of plant growth;
Fig. 2 shows the principle of luminosity figure according to LED fosterage of plants lamp of the present invention;
Fig. 3 a shows the decomposing schematic representation that adopts the LED lamp tube structure according to LED fosterage of plants lamp of the present invention;
Fig. 3 b shows the decomposing schematic representation that adopts cylinder lamp structure according to LED fosterage of plants lamp of the present invention;
Fig. 4 shows the spectrogram according to blue-ray LED light source of the present invention;
Fig. 5 shows the utilizing emitted light spectrogram according to the LED fosterage of plants lamp of the embodiment of the invention one;
Fig. 6 shows the utilizing emitted light spectrogram according to the LED fosterage of plants lamp of the embodiment of the invention two;
Fig. 7 shows the spectrogram after compound according to blue-ray LED light source of the present invention and yellow-green fluorescence powder;
Fig. 8 shows the utilizing emitted light spectrogram according to the LED fosterage of plants lamp of the embodiment of the invention three;
Fig. 9 shows the utilizing emitted light spectrogram of the LED fosterage of plants lamp of Comparative Examples.
The specific embodiment
Below in conjunction with the embodiment of the invention, technical scheme of the present invention is described in detail, but following embodiment understands the present invention, and can not limit the present invention, embodiment and the feature among the embodiment among the present invention can make up mutually, and the multitude of different ways that the present invention can be defined by the claims and cover is implemented.
In a kind of exemplary embodiment of the present invention, LED fosterage of plants lamp comprises pedestal, led light source 1, lampshade 2, the inner surface of lampshade 2 and/or outer surface are provided with quanta point material layer 3, and the emission spectrum wave band of the light that led light source 1 sends after by quantum dot material layer 3 comprises the emission peak in two or more 400～1100nm scopes.As shown in Figure 2, the principle of luminosity of the LED fosterage of plants lamp of embodiment of the present invention is: the primary light that led light source 1 sends shines on the quanta point material layer 3 on the lampshade 2, quanta point material in the quanta point material layer 3 absorbs the energy of primary light and is excited, and then launch complex light, the spectral band of this complex light comprises the emission peak in the full spectral band scope of two or more 400～1100nm, can satisfy the specificity spectrum demand of plant growth.
Traditional luminescent material such as quanta point material in the above-mentioned quanta point material layer 3 and fluorescent RE powder etc. is compared, and not only the peak position of emission spectrum wave band is adjustable, and half-peak breadth is also narrow, and is very favourable for the modulation of the required specificity spectrum of plant growth; By the selection of quanta point material component and the adjusting of particle diameter, can realize easily the adjusting of emission peak positions in 400～1100nm all band scope of emission spectrum wave band, thereby provide needed specificity spectrum for the photosynthesis of plant growth; By quanta point material layer 3 is set, only use a kind of led light source that the adjustable emission spectrum of peak position in all band scope just can be provided, avoided the somewhat complex design of circuit and driving power, but also can be so that the light uniformity that LED fosterage of plants lamp sends avoids occurring the incomplete phenomenon of mixed light.
In the preferred embodiment of the present invention, the emission spectrum wave band of above-mentioned quanta point material layer 3 comprises that at least one scope is at the emission peak and the emission peak of at least one scope at 720～1100nm far-red light wave band of 400～720nm visible light wave range.Studies show that, the far-red light of the blue light of 400～520nm, the ruddiness of 610～720nm and 720～1100nm has significant impact to the photosynthesis of plant and the growth of plant cell, especially the far-red light of the ruddiness of 610～720nm and 720～1000nm is radiated at simultaneously on the plant and can produces two gain of light effects (Emerson enhancement effect), promotes photosynthetic efficient greatly to improve.Therefore, when the emission spectrum wave band of above-mentioned quanta point material layer 3 comprises at least one emission peak of at least one emission peak of 400～720nm visible light wave range and 720～1100nm far-red light wave band simultaneously, the complex light that LED fosterage of plants lamp sends can further improve the efficient of photosynthesis of plant, promotes that plant grows faster and betterly.
In a kind of concrete embodiment of the present invention, shown in Fig. 3 a, LED fosterage of plants lamp adopts the LED lamp tube structure, wherein, led light source 1 is arranged on the pedestal of fluorescent tube shape, and quanta point material layer 3 is arranged on the inner surface and/or outer surface of the lampshade 2 that matches with fluorescent tube shape pedestal.Particularly, above-mentioned LED lamp tube structure can be selected the LED fluorescent tube of T8 pipe (1 inch of tube diameter), T5 pipe different models such as (5/8 inch of tube diameters).
In the another kind of concrete embodiment of the present invention, shown in Fig. 3 b, LED fosterage of plants lamp adopts cylinder lamp structure, wherein, led light source is arranged on (shown in arrow left side among the figure) on the bottom surface of tubular pedestal, then inner surface and/or outer surface are provided with tabular lampshade 2 lids of quanta point material layer 3 to the tubular pedestal, are assembled into the LED fosterage of plants lamp (shown in arrow right side among the figure) of cylinder lamp structure.
In the preferred embodiment of the present invention, the quanta point material in the above-mentioned quanta point material layer 3 is common quanta point material, includes but not limited to II-VI family, III-V family, IV-VI family, I-III-VI family and/or II-III-VI family quantum dot.Preferably, above-mentioned quanta point material includes but not limited to: by being selected from any element among the element Zn of II family, Cd, the Hg and being selected from the II-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms; By being selected from any element among the element Ge of IV family, Sn, the Pb and being selected from the IV-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms; By being selected from any element among iii group element Al, Ga, the In and being selected from the III-V family quantum dot that any element among V group element N, P, As, the Sb forms; By being selected from I family element Cu, any element among the Ag is selected from any element among iii group element Al, Ga, the In and is selected from the I-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms; And/or by being selected from the element Zn of II family, any element among Cd, the Hg is selected from any element among iii group element Al, Ga, the In and is selected from the II-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms.By optimizing the component of selecting quanta point material, can obtain the adjustable specificity emission spectrum of peak position in 400～1100nm all band scope.
In the preferred embodiment of the present invention, the quanta point material in the above-mentioned quanta point material layer 3 is nano-crystal with core-shell structure.Wherein: the constituent material of nucleus includes but not limited to: by being selected from any element among the element Zn of II family, Cd, the Hg and being selected from the II-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms; By being selected from any element among the element Ge of IV family, Sn, the Pb and being selected from the IV-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms; By being selected from any element among iii group element Al, Ga, the In and being selected from the III-V family quantum dot that any element among V group element N, P, As, the Sb forms; By being selected from I family element Cu, any element among the Ag is selected from any element among iii group element Al, Ga, the In and is selected from the I-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms; And/or by being selected from the element Zn of II family, any element among Cd, the Hg is selected from any element among iii group element Al, Ga, the In and is selected from the II-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms.The constituent material of shell includes but not limited to equally: by being selected from any element among the element Zn of II family, Cd, the Hg and being selected from the II-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms; By being selected from any element among the element Ge of IV family, Sn, the Pb and being selected from the IV-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms; By being selected from any element among iii group element Al, Ga, the In and being selected from the III-V family quantum dot that any element among V group element N, P, As, the Sb forms; By being selected from I family element Cu, any element among the Ag is selected from any element among iii group element Al, Ga, the In and is selected from the I-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms; And/or by being selected from the element Zn of II family, any element among Cd, the Hg is selected from any element among iii group element Al, Ga, the In and is selected from the II-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms.The shell of nano-crystal with core-shell structure is mainly used to absorb the energy of the primary light that led light source 1 sends, and nucleus is mainly used to launch the light of specificity spectrum, adopts nano-crystal with core-shell structure, can be so that the modulation of specificity emission spectrum is more accurate.
In the preferred embodiment of the present invention, the quanta point material in the above-mentioned quanta point material layer 3 is doping semi-conductor nanocrystalline (d-dots).Wherein: doped chemical includes but not limited to Cu, Mn, Fe, Co and/or rare earth element.Fertile material includes but not limited to: by being selected from any element among the element Zn of II family, Cd, the Hg and being selected from the II-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms; By being selected from any element among the element Ge of IV family, Sn, the Pb and being selected from the IV-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms; By being selected from any element among iii group element Al, Ga, the In and being selected from the III-V family quantum dot that any element among V group element N, P, As, the Sb forms; By being selected from I family element Cu, any element among the Ag is selected from any element among iii group element Al, Ga, the In and is selected from the I-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms; And/or by being selected from the element Zn of II family, any element among Cd, the Hg is selected from any element among iii group element Al, Ga, the In and is selected from the II-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms.More typical doping semi-conductor nanocrystalline is for example: ZnSe or ZnS that Cu mixes, the ZnSe that Mn mixes or ZnS etc.Employing comprises the doping semi-conductor nanocrystalline of doped chemical, can realize more accurately controlled specificity emission spectrum modulation.
Preferably, the quanta point material in the above-mentioned quanta point material layer 3 has different particle diameters, namely can further form quantum dot material layer 3 by the above-mentioned quanta point material of selecting different-grain diameter, to obtain the different emission spectrum wave band of emission peak positions.The below illustrates the quanta point material of selecting different components and version, and by further selecting different particle diameter and other performance parameter, can obtain the adjustable specificity emission spectrum of peak position in 400～1100nm all band scope:
For example, select CdS quantum dot or its nano-crystal with core-shell structure, change to 15.0nm by regulating its particle diameter from 1.5nm, the emission peak positions of the emission spectrum wave band of LED fosterage of plants lamp can be adjusted to 500nm from 350nm;
For example, select CdSe quantum dot or its nano-crystal with core-shell structure, regulate its particle diameter and change to 15.0nm by regulating its particle diameter from 1.5nm, the emission peak positions of the emission spectrum wave band of LED fosterage of plants lamp can be adjusted to 700nm from 450nm;
For example, select CdTe quantum dot or its nano-crystal with core-shell structure, change to 15.0nm by regulating its particle diameter from 1.5nm, the emission peak positions of the emission spectrum wave band of LED fosterage of plants lamp can be adjusted to 750nm from 500nm;
For example, select InP quantum dot or its nano-crystal with core-shell structure, change to 10.0nm by regulating its particle diameter from 1.5nm, the emission peak positions of the emission spectrum wave band of LED fosterage of plants lamp can be adjusted to 800nm from 500nm;
For example, select InAs quantum dot or its nano-crystal with core-shell structure, change to 10.0nm by regulating its particle diameter from 1.5nm, the emission peak positions of the emission spectrum wave band of LED fosterage of plants lamp can be adjusted to 1300nm from 500nm;
For example, the ZnCdS that selects Cu to mix
2Semiconductor nano, the ratio of regulating its particle diameter and Zn and Cd can be adjusted to 1100nm from 500nm with the emission peak positions of the emission spectrum wave band of LED fosterage of plants lamp;
For example, the ZnSe/ZnS semiconductor nano-crystal with core-shell structure of selecting Mn to mix is regulated the thickness of shell ZnS, the emission peak positions of the emission spectrum wave band of LED fosterage of plants lamp can be adjusted to 650nm from 575nm.
For example, the InP semiconductor nano of selecting Cu to mix is regulated its particle diameter, the emission peak positions of the emission spectrum wave band of LED fosterage of plants lamp can be adjusted to 900nm from 500nm.
In the preferred embodiment of the present invention, led light source 1 is blue-ray LED light source or royal purple light led light source, and its emission wavelength is 350～470nm, and above-mentioned blue light or royal purple light led light source are the most ripe led light sources of technique of present batch machining; Also comprise the yellow-green fluorescence powder in the quanta point material layer 3, for example, can adopt rear-earth-doped YAG(yttrium-aluminium-garnet) fluorescent material, after this yellow-green fluorescence powder was subject to separately primary light that blue-ray LED light source that above-mentioned emission wavelength is 350～470nm or royal purple light led light source send and excites, what send was the cold white light of colour temperature more than 4500K; This yellow-green fluorescence powder and above-mentioned quanta point material are used in combination in quanta point material layer 3, after being subject to primary light that blue-ray LED light source that above-mentioned emission wavelength is 350～470nm or royal purple light led light source send this moment and exciting, send be colour temperature at the warm white of 2500～4500K, this warm white has better facilitation to plant growth.
Further specify beneficial effect of the present invention below in conjunction with embodiment.
Embodiment one
Inner surface coating emission spectrum wave band peak position at lampshade is the CdSe/ZnS nano-crystal with core-shell structure of 660nm and the compound of polyacrylate, forms the quantum dot material layer; The blue-ray LED light source is installed on the pedestal; The lampshade that is provided with the quanta point material layer is installed on the pedestal that is provided with led light source, and finishes the installation of driving power and circuit, make obtaining LED fosterage of plants lamp.
Wherein, the blue-ray LED light source send blue light spectrogram as shown in Figure 4; Embodiment one make obtain LED fosterage of plants lamp the utilizing emitted light spectrogram as shown in Figure 5, comprise the wave band of blue light, ruddiness.
Embodiment two
Applying emission spectrum wave band peak position at the outer surface of lampshade is the CdSe/ZnS nano-crystal with core-shell structure of 660nm, the Cu doping CdS/ZnS nano-crystal with core-shell structure and the compound of polyacrylate that emission spectrum wave band peak position is 730nm, formation quantum dot material layer; The blue-ray LED light source is installed on the pedestal; The lampshade that is provided with the quanta point material layer is installed on the pedestal that is provided with led light source, and finishes the installation of driving power and circuit, make obtaining LED fosterage of plants lamp.
Wherein, the blue-ray LED light source send blue light spectrogram as shown in Figure 4; Embodiment two make obtain LED fosterage of plants lamp the utilizing emitted light spectrogram as shown in Figure 6, comprise the wave band of blue light, ruddiness, far-red light.
Embodiment three
Surfaces externally and internally coating emission spectrum wave band peak position at lampshade is the compound of CdSe/ZnS nano-crystal with core-shell structure, yellow-green fluorescence powder and the polyacrylate of 660nm, forms the quantum dot material layer; The blue-ray LED light source is installed on the pedestal; The lampshade that is provided with the quanta point material layer is installed on the pedestal that is provided with led light source, and finishes the installation of driving power and circuit, make obtaining LED fosterage of plants lamp.
Wherein, the spectrogram after blue-ray LED light source and independent yellow-green fluorescence powder are compound as shown in Figure 7, complex light belongs to cold white light; Embodiment three make obtain LED fosterage of plants lamp the utilizing emitted light spectrogram as shown in Figure 8, complex light belongs to warm white.
Comparative Examples
Blue-ray LED light source and the red-light LED light source ratio with 1:1 is installed on the pedestal; Lampshade is installed on the pedestal, and finishes the installation of driving power and circuit, make obtaining LED fosterage of plants lamp.Comparative Examples make obtain LED fosterage of plants lamp the utilizing emitted light spectrogram as shown in Figure 9, comprise the wave band of blue light, ruddiness.
The experiments of measuring of plant seedling growth under the LED fosterage of plants light irradiation:
(1) experiment material and processing method
Testing used vegetable seeds is No. 9, Zhejiang University (cultivations of department of agriculture of Zhejiang University), seed is after surface sterilization, place in the germination box and germinate, wait to grow to a leaf wholeheartedly the time, the neat seedling of selecting to emerge carries out water planting, is divided under two groups of LED fosterage of plants lamps that place respectively embodiment three and Comparative Examples carrying out photo-irradiation treatment, changed one time of nutrition liquid every 4 days, condition of culture is 11h/13h(daytime/night), 20 ℃/14 ℃ of temperature (daytime/night), constant humidity 70%.
(2) test index and method of testing
The growthform index of plant seedlings is got the average of 10 strains, grab sample.With ruler measure plant height, root is long, it is thick to measure stem with slide measure.Strong sprout index according to strong sprout index=(stem thick/plant height) * complete stool dry mass calculate.Photosynthetic rate is measured with photosynthetic speedometer, and chlorophyll content adopts acetone, alcohol mixeding liquid extraction method to measure, and soluble sugar content takes the anthrone colorimetric method to measure, and soluble protein content is measured with the Coomassie brilliant blue method.
(3) experimental result data analysis
For the experimental result data of above-mentioned test gained, adopt SPSS16.0 software to carry out statistical analysis, adopt the Deng Kenshi duncan's new multiple range method to carry out multiple ratio.Analysis result is as shown in Table 1 and Table 2:
Table 1
| ? | Plant height/cm | Root length/cm | Stem is thick/cm | Fresh weight/g | Dry weight/g | Overground part dry weight/g | Underground part dry weight/g | Strong sprout index |
| Embodiment three | 56.8a | 26.4a | 0.366b | 3.276b | 0.271b | 0.215b | 0.056a | 1.72b |
| Comparative Examples | 46.5c | 22.0ab | 0.294c | 2.132d | 0.195c | 0.141c | 0.052a | 1.23c |
Annotate: data are the mean value of Same Way reprocessing 3 times in the table, the check of Deng Kenshi duncan's new multiple range method, and lowercase a, b, c represent ρ＜0.05 level of signifiance.
Table 2
Annotate: data are the mean value of Same Way reprocessing 3 times in the table, the check of Deng Kenshi duncan's new multiple range method, and lowercase a, b, c represent ρ＜0.05 level of signifiance; FW represents fresh weight; Chl a and Chl b represent respectively chlorophyll a and chlorophyll b.
From the experimental result data of table 1 and table 2 as seen, use the LED fosterage of plants lamp of the embodiment of the invention three to carry out photo-irradiation treatment, be compared to Comparative Examples, because more suitable specificity spectrum and better light mixing effect is provided, photosynthesis rate in the plant seedling growth process is faster, synthetic soluble sugar, the soluble protein content that obtains significantly increases, plant seedlings Determination of Chlorophyll content is also more, the plant height of cultivating the plant seedlings obtain is higher, root longer, stem is thicker, fresh weight and dry weight is heavier, strong sprout index larger.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. a LED fosterage of plants lamp comprises pedestal, led light source (1), lampshade (2), it is characterized in that,
The inner surface of described lampshade (2) and/or outer surface are provided with quanta point material layer (3), and the emission spectrum wave band of the light that described led light source (1) sends after by described quanta point material layer (3) comprises the emission peak in two or more 400～1100nm scopes.
2. LED fosterage of plants lamp according to claim 1 is characterized in that, described emission spectrum wave band comprises that at least one scope is at the emission peak and the emission peak of at least one scope at 720～1100nm far-red light wave band of 400～720nm visible light wave range.
3. LED fosterage of plants lamp according to claim 1 and 2 is characterized in that, the quanta point material in the described quanta point material layer (3) comprises II-VI family, III-V family, IV-VI family, I-III-VI family and/or II-III-VI family quantum dot.
4. LED fosterage of plants lamp according to claim 3 is characterized in that, the quanta point material in the described quanta point material layer (3) comprises:
By being selected from any element among the element Zn of II family, Cd, the Hg and being selected from the II-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms;
By being selected from any element among the element Ge of IV family, Sn, the Pb and being selected from the IV-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms;
By being selected from any element among iii group element Al, Ga, the In and being selected from the III-V family quantum dot that any element among V group element N, P, As, the Sb forms;
By being selected from I family element Cu, any element among the Ag is selected from any element among iii group element Al, Ga, the In and is selected from the I-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms; And/or
By being selected from the element Zn of II family, any element among Cd, the Hg is selected from any element among iii group element Al, Ga, the In and is selected from the II-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms.
5. LED fosterage of plants lamp according to claim 1 and 2 is characterized in that, the quanta point material in the described quanta point material layer (3) is nano-crystal with core-shell structure, wherein,
The nucleus of described nano-crystal with core-shell structure comprises:
By being selected from any element among the element Zn of II family, Cd, the Hg and being selected from the II-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms;
By being selected from any element among the element Ge of IV family, Sn, the Pb and being selected from the IV-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms;
By being selected from any element among iii group element Al, Ga, the In and being selected from the III-V family quantum dot that any element among V group element N, P, As, the Sb forms;
By being selected from I family element Cu, any element among the Ag is selected from any element among iii group element Al, Ga, the In and is selected from the I-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms; And/or
By being selected from the element Zn of II family, any element among Cd, the Hg is selected from any element among iii group element Al, Ga, the In and is selected from the II-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms;
The shell of described nano-crystal with core-shell structure comprises:
By being selected from any element among the element Zn of II family, Cd, the Hg and being selected from the II-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms;
By being selected from any element among the element Ge of IV family, Sn, the Pb and being selected from the IV-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms;
By being selected from any element among iii group element Al, Ga, the In and being selected from the III-V family quantum dot that any element among V group element N, P, As, the Sb forms;
By being selected from I family element Cu, any element among the Ag is selected from any element among iii group element Al, Ga, the In and is selected from the I-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms; And/or
By being selected from the element Zn of II family, any element among Cd, the Hg is selected from any element among iii group element Al, Ga, the In and is selected from the II-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms.
6. LED fosterage of plants lamp according to claim 1 and 2 is characterized in that, the quanta point material in the described quanta point material layer (3) is doping semi-conductor nanocrystalline, wherein,
The doped chemical of described doping semi-conductor nanocrystalline comprises Cu, Mn, Fe, Co and/or rare earth element;
The fertile material of described doping semi-conductor nanocrystalline comprises:
By being selected from any element among the element Zn of II family, Cd, the Hg and being selected from the II-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms;
By being selected from any element among the element Ge of IV family, Sn, the Pb and being selected from the IV-VI family quantum dot that any element among the element O of VI family, S, Se, the Te forms;
By being selected from any element among iii group element Al, Ga, the In and being selected from the III-V family quantum dot that any element among V group element N, P, As, the Sb forms;
By being selected from I family element Cu, any element among the Ag is selected from any element among iii group element Al, Ga, the In and is selected from the I-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms; And/or
By being selected from the element Zn of II family, any element among Cd, the Hg is selected from any element among iii group element Al, Ga, the In and is selected from the II-III-VI family quantum dot that any element among the element O of VI family, S, Se, the Sb forms.
7. LED fosterage of plants lamp according to claim 1 and 2 is characterized in that, the quanta point material in the described quanta point material layer (3) has different-grain diameter.
8. LED fosterage of plants lamp according to claim 1 and 2 is characterized in that,
Described led light source (1) is blue-ray LED light source or royal purple light led light source, and emission wavelength is 350～470nm;
Also include the yellow-green fluorescence powder in the described quanta point material layer (3).
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