KR20120023239A - Solar cell apparatus and method of fabricating the same - Google Patents

Solar cell apparatus and method of fabricating the same Download PDF

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KR20120023239A
KR20120023239A KR1020100085424A KR20100085424A KR20120023239A KR 20120023239 A KR20120023239 A KR 20120023239A KR 1020100085424 A KR1020100085424 A KR 1020100085424A KR 20100085424 A KR20100085424 A KR 20100085424A KR 20120023239 A KR20120023239 A KR 20120023239A
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region
layer
light absorbing
conductive dopant
absorbing layer
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KR1020100085424A
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KR101144540B1 (en
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박희선
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엘지이노텍 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

A photovoltaic device is disclosed. The solar cell apparatus includes a substrate; A back electrode layer disposed on the substrate; A light absorbing layer disposed on the back electrode layer; A window layer disposed on the light absorbing layer, the window layer comprising: a first region disposed adjacent to the light absorbing layer; And a second region disposed on the first region, wherein the first region includes a conductive dopant at a higher concentration than the second region.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell,

Embodiments relate to a photovoltaic device and a method of manufacturing the same.

Recently, as the demand for energy increases, the development of a photovoltaic device for converting solar energy into electrical energy is in progress.

In particular, a CIGS-based photovoltaic device, which is a pn heterojunction device having a substrate structure including a glass substrate, a metal back electrode layer, a p-type CIGS-based light absorbing layer, a high resistance buffer layer, an n-type window layer, and the like, is widely used.

In such a photovoltaic device, research is being conducted to improve electrical characteristics such as low resistance and high transmittance.

Embodiments provide a photovoltaic device having improved electrical characteristics and durability and a method of manufacturing the same.

The solar cell apparatus according to the embodiment includes a substrate; A back electrode layer disposed on the substrate; A light absorbing layer disposed on the back electrode layer; A window layer disposed on the light absorbing layer, the window layer comprising: a first region disposed adjacent to the light absorbing layer; And a second region disposed on the first region, wherein the first region includes a conductive dopant at a higher concentration than the second region.

A method of manufacturing a solar cell apparatus according to an embodiment includes forming a back electrode layer on a substrate; Forming a light absorbing layer on the back electrode layer; And forming a window layer on the light absorbing layer, wherein the window layer comprises: a first region disposed adjacent to the light absorbing layer; And a second region disposed on the first region, wherein the first region includes a conductive dopant at a higher concentration than the second region.

The solar cell apparatus according to the embodiment includes a larger amount of conductive dopant in the first region adjacent to the light absorbing layer. In particular, the concentration of the conductive dopant at the bottom of the window layer may be the highest.

Thus, the carrier mobility at the bottom of the window layer is improved, and the overall series resistance of the photovoltaic device according to the embodiment is reduced.

In addition, the solar cell apparatus according to the embodiment may include a connection portion extending from the window layer to directly contact the back electrode layer. At this time, the portion of the aluminum having a high concentration of the contact portion is in direct contact with the back electrode layer, the window layer may be connected to the back electrode layer. Accordingly, the contact resistance between each cell is reduced, and the solar cell apparatus according to the embodiment may have improved electrical characteristics.

In addition, the conductive dopant is relatively included in the first region, which is a required region, and relatively less in the second region, which is not required. Accordingly, the window layer as a whole contains a small amount of conductive dopant. Therefore, the solar cell apparatus according to the embodiment reduces the transmittance decrease due to the conductive dopant or the like, improves the transmittance of the window layer, and has an improved photoelectric conversion efficiency.

1 is a plan view illustrating a solar cell panel according to an embodiment.
FIG. 2 is a cross-sectional view showing a section cut along AA 'in FIG. 1; FIG.
3 is a graph showing the concentration of the conductive dopant in the window layer.
4 is a graph showing the concentration of the conductive dopant of the window layer according to another embodiment.
5 is a graph showing the concentration of the conductive dopant in the window layer according to another embodiment.
6 to 9 are views illustrating a process for manufacturing a solar cell panel according to the embodiment.

 In the description of the embodiments, where each substrate, layer, film, or electrode is described as being formed "on" or "under" of each substrate, layer, film, or electrode, etc. , "On" and "under" include both "directly" or "indirectly" formed through other components. In addition, the upper or lower reference of each component is described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

1 is a plan view illustrating a solar cell apparatus according to an embodiment. FIG. 2 is a cross-sectional view taken along the line A-A 'of FIG. 1.

1 to 2, the photovoltaic device includes a support substrate 100, a back electrode layer 200, a light absorbing layer 300, a buffer layer 400, a high resistance buffer layer 500, a window layer 600, and the like. It includes a plurality of connections 700.

The support substrate 100 has a plate shape, and the back electrode layer 200, the light absorbing layer 300, the buffer layer 400, the high resistance buffer layer 500, the window layer 600, and the connection portion ( 700).

The support substrate 100 may be an insulator. The support substrate 100 may be a glass substrate, a plastic substrate, or a metal substrate. In more detail, the support substrate 100 may be a soda lime glass substrate. The supporting substrate 100 may be transparent. The support substrate 100 may be rigid or flexible.

The back electrode layer 200 is disposed on the support substrate 100. The back electrode layer 200 is a conductive layer. Examples of the material used for the back electrode layer 200 include a metal such as molybdenum.

In addition, the back electrode layer 200 may include two or more layers. In this case, each of the layers may be formed of the same metal, or may be formed of different metals.

First through holes TH1 are formed in the back electrode layer 200. The first through holes TH1 are open regions that expose the top surface of the support substrate 100. The first through holes TH1 may have a shape extending in one direction when viewed in a plan view.

The width of the first through holes TH1 may be about 80 μm to 200 μm.

The back electrode layer 200 is divided into a plurality of back electrodes by the first through holes TH1. That is, the back electrodes are defined by the first through holes TH1.

The back electrodes are spaced apart from each other by the first through holes TH1. The back electrodes are arranged in a stripe shape.

Alternatively, the back electrodes may be arranged in a matrix form. At this time, the first through grooves TH1 may be formed in a lattice form when viewed from a plane.

The light absorbing layer 300 is disposed on the back electrode layer 200. In addition, the material included in the light absorbing layer 300 is filled in the first through holes TH1.

The light absorbing layer 300 includes a group I-III-VI compound. For example, the light absorbing layer 300 is copper-indium-gallium-selenide-based (Cu (In, Ga) Se 2; CIGS-based) crystal structure, a copper-indium-selenide-based or copper-gallium-selenide Crystal structure.

The energy band gap of the light absorption layer 300 may be about 1 eV to 1.8 eV.

The buffer layer 400 is disposed on the light absorbing layer 300. The buffer layer 400 includes cadmium sulfide (CdS), and the energy band gap of the buffer layer 400 is about 2.2 eV to 2.4 eV.

The high resistance buffer layer 500 is disposed on the buffer layer 400. The high resistance buffer layer 500 includes zinc oxide (i-ZnO) that is not doped with impurities. The energy bandgap of the high resistance buffer layer 500 is about 3.1 eV to 3.3 eV.

Second through holes TH2 are formed in the light absorbing layer 300, the buffer layer 400, and the high resistance buffer layer 500. The second through holes TH2 pass through the light absorbing layer 300. In addition, the second through holes TH2 are open regions exposing the top surface of the back electrode layer 200.

The second through holes TH2 are formed adjacent to the first through holes TH1. That is, some of the second through holes TH2 are formed next to the first through holes TH1 when viewed in a plan view.

The width of the second through holes TH2 may be about 80 μm to about 200 μm.

In addition, the light absorbing layer 300 defines a plurality of light absorbing portions by the second through holes TH2. That is, the light absorbing layer 300 is divided into the light absorbing portions by the second through holes TH2.

The buffer layer 400 is defined as a plurality of buffers by the second through holes TH2. That is, the buffer layer 400 is divided into the buffers by the second through holes TH2.

The high resistance buffer layer 500 is defined as a plurality of high resistance buffers by the second through holes TH2. That is, the high resistance buffer layer 500 is divided into the high resistance buffers by the second through holes TH2.

The window layer 600 is disposed on the high resistance buffer layer 500. The window layer 600 is transparent and is a conductive layer. In addition, the resistance of the window layer 600 is higher than the resistance of the back electrode layer 200. For example, the resistance of the window layer 600 may be about 10 to 200 times greater than the resistance of the back electrode layer 200.

 The window layer 600 includes an oxide. For example, the window layer 600 may include zinc oxide, indium tin oxide (ITO), or indium zinc oxide (IZO).

In addition, the oxide may include a conductive dopant such as aluminum (Al), alumina (Al 2 O 3 ), magnesium (Mg), or gallium (Ga). In more detail, the window layer 600 may include aluminum doped zinc oxide (AZO), gallium doped zinc oxide (GZO), or the like.

The concentration of the conductive dopant varies depending on the position of the window layer 600. In more detail, the concentration of the conductive dopant may be inversely proportional to the distance from the light absorbing layer 300. That is, the concentration of the conductive dopant in the window layer 600 may increase gradually as the light absorbing layer 300 approaches.

For example, the window layer 600 may include a first region 610 and a second region 620. The first region 610 is adjacent to the high resistance buffer layer 500, and the second region 620 is located on the first region 610.

The first region 610 includes the conductive dopant at a relatively high concentration. That is, the concentration of the conductive dopant in the first region 610 is higher than that of the second region 620.

The second region 620 includes the conductive dopant at a relatively low concentration. That is, the concentration of the conductive dopant in the second region 620 is lower than that of the first region 610.

For example, the first region 610 may include 0.01 wt% to 0.3 wt% of the conductive dopant, and the second region 620 may include 0.3 wt% to 5 wt% of the conductive dopant. .

The concentration of the conductive dopant in the window layer 600 may be described by being divided into two or more regions. For example, the concentration of the conductive dopant is the highest in the region of the lowest layer in the window layer 600. In addition, the concentration of the conductive dopant in the region of the intermediate layer in the window layer 600 is lower than the concentration of the conductive dopant in the region of the lowest layer. In addition, the concentration of the conductive dopant is lowest in the region of the uppermost layer in the window layer 600.

As shown in FIG. 3, the concentration of the conductive dopant according to the position of the window layer 600 may have a linear gradient. That is, the concentration of the conductive dopant may decrease linearly as the height of the window layer 600 is increased.

For example, the concentration gradient of the conductive dopant according to the position of the window layer 600 may be substantially the same in both the first region 610 and the second region 620. That is, the concentration gradient of the conductive dopant in the first region 610 may correspond to the concentration gradient of the conductive dopant in the second region 620.

As shown in FIGS. 4 and 5, the concentration of the conductive dopant according to the position of the window layer 600 may have a gradient of a curve.

Referring to FIG. 4, the concentration curve of the conductive dopant according to the position of the window layer 600 may have a convex shape downward. Accordingly, the concentration gradient of the conductive dopant in the first region 610 may be greater than the concentration gradient of the conductive dopant in the second region 620. That is, the concentration of the conductive dopant changes more rapidly in accordance with the position of the window layer 600 in the first region 610 than in the second region 620.

Here, a is a concentration of aluminum at the interface between the high resistance buffer layer 500 and the window layer 600. b is the concentration of aluminum at the top of the window layer 600.

Referring to FIG. 5, the concentration curve of the conductive dopant according to the position of the window layer 600 may have a convex shape upward. The concentration gradient of the conductive dopant in the second region 620 may be greater than the concentration gradient of the conductive dopant in the first region 610. That is, the concentration of the conductive dopant changes more rapidly in accordance with the position of the window layer 600 in the second region 620 than in the first region 610.

Third through holes TH3 are formed in the buffer layer 400, the high resistance buffer layer 500, and the window layer 600. The third through holes TH3 are open regions exposing the top surface of the back electrode layer 200. For example, the width of the third through holes TH3 may be about 80 μm to about 200 μm.

The third through holes TH3 are formed at positions adjacent to the second through holes TH2. In more detail, the third through holes TH3 are disposed next to the second through holes TH2. That is, when viewed in a plan view, the third through holes TH3 are arranged side by side next to the second through holes TH2.

The window layer 600 is divided into a plurality of windows by the third through holes TH3. That is, the windows are defined by the third through holes TH3.

The windows have a shape corresponding to the back electrodes. That is, the windows are arranged in a stripe shape. Alternatively, the windows may be arranged in a matrix form.

In addition, a plurality of cells C1, C2... Are defined by the third through holes TH3. In more detail, the cells C1, C2... Are defined by the second through holes TH2 and the third through holes TH3. That is, the photovoltaic device according to the embodiment is divided into the cells C1, C2... By the second through holes TH2 and the third through holes TH3.

The connection parts 700 are disposed inside the second through holes TH2. The connection parts 700 extend downward from the window layer 600 and are connected to the back electrode layer 200. For example, the connection parts 700 extend from the window of the first cell C1 and are connected to the back electrode of the second cell C2.

Thus, the connection parts 700 connect adjacent cells to each other. In more detail, the connection parts 700 connect the windows and the back electrodes included in the cells C1 and C2... Adjacent to each other.

The connection part 700 is formed integrally with the window layer 600. That is, the material used as the connection part 700 is the same as the material used as the window layer 600. The connection parts 700 include the conductive dopant in the same distribution as the window layer 600.

Similarly, the connection parts 700 may include a lower region 710 including a relatively large amount of the conductive dopant and an upper region 720 including a relatively small amount of the conductive dopant. In this case, the lower region 710 may be integrally formed with the first region 610, and the upper region 720 may be integrally formed with the second region 620.

The lower region 710 is in direct contact with the back electrode layer 200. That is, the connection part 700 is connected to the back electrode layer 200 through the lower region 710 where the concentration of the conductive dopant is relatively high. Therefore, the connection property between the lower region 710 and the back electrode layer 200 may be improved, and the cells C1, C2... Are effectively connected by the connection parts 700.

Therefore, the solar cell apparatus according to the embodiment prevents disconnection between the cells C1 and C2... And the contact resistance between the cells C1 and C2. Accordingly, the solar cell apparatus according to the embodiment has improved power generation efficiency.

The solar cell apparatus according to the embodiment includes a larger amount of conductive dopant in the first region 610. In particular, the concentration of the conductive dopant at the lowermost portion of the window layer 600 may be the highest.

Accordingly, the carrier mobility at the bottom of the window layer 600 is increased, and the overall series resistance of the photovoltaic device according to the embodiment is reduced.

In addition, the first region 610, which is a region where the conductive dopant is required, is relatively included, and the second region 620, which is not necessary, is included relatively less. Accordingly, the window layer 600 may include a small amount of conductive dopant as a whole. Therefore, the solar cell apparatus according to the embodiment improves the transmittance of the window layer 600 and has an improved photoelectric conversion efficiency.

6 to 9 are cross-sectional views illustrating a method of manufacturing the solar cell apparatus according to the embodiment. For a description of the present manufacturing method, refer to the description of the photovoltaic device described above.

Referring to FIG. 6, the back electrode layer 200 is formed on the support substrate 100, and the back electrode layer 200 is patterned to form first through holes TH1. Accordingly, a plurality of back electrodes are formed on the support substrate 100. The back electrode layer 200 is patterned by a laser.

The first through holes TH1 may expose an upper surface of the support substrate 100 and have a width of about 80 μm to about 200 μm.

In addition, an additional layer, such as a diffusion barrier, may be interposed between the support substrate 100 and the back electrode layer 200, wherein the first through holes TH1 expose the top surface of the additional layer. .

Referring to FIG. 7, a light absorbing layer 300, a buffer layer 400, and a high resistance buffer layer 500 are formed on the back electrode layer 200.

The light absorbing layer 300 may be formed by a sputtering process or an evaporation method.

For example, copper, indium, gallium, selenide-based (Cu (In, Ga) Se 2 ; CIGS-based) while evaporating copper, indium, gallium, and selenium simultaneously or separately to form the light absorbing layer 300. The method of forming the light absorbing layer 300 and the method of forming the metal precursor film by the selenization process are widely used.

When the metal precursor film is formed and selenization is subdivided, a metal precursor film is formed on the back electrode 200 by a sputtering process using a copper target, an indium target, and a gallium target.

Subsequently, the metal precursor film is formed of a copper-indium-gallium-selenide-based (Cu (In, Ga) Se 2 ; CIGS-based) light absorbing layer by a selenization process.

Alternatively, the copper target, the indium target, the sputtering process using the gallium target, and the selenization process may be performed simultaneously.

Alternatively, the CIS-based or CIG-based optical absorption layer 300 can be formed by using only a copper target and an indium target, or by a sputtering process and a selenization process using a copper target and a gallium target.

Thereafter, cadmium sulfide is deposited by a sputtering process or a chemical bath depositon (CBD) or the like, and the buffer layer 400 is formed.

Thereafter, zinc oxide is deposited on the buffer layer 400 by a sputtering process, and the high resistance buffer layer 500 is formed.

The buffer layer 400 and the high resistance buffer layer 500 are deposited to a low thickness. For example, the thickness of the buffer layer 400 and the high resistance buffer layer 500 is about 1 nm to about 80 nm.

Thereafter, a portion of the light absorbing layer 300, the buffer layer 400, and the high resistance buffer layer 500 is removed to form second through holes TH2.

The second through holes TH2 may be formed by a mechanical device such as a tip or a laser device.

For example, the light absorbing layer 300 and the buffer layer 400 may be patterned by a tip having a width of about 40 μm to about 180 μm. In addition, the second through holes TH2 may be formed by a laser having a wavelength of about 200 to 600 nm.

In this case, the width of the second through holes TH2 may be about 100 μm to about 200 μm. In addition, the second through holes TH2 are formed to expose a portion of the top surface of the back electrode layer 200.

Referring to FIG. 8, a window layer 600 is formed on the light absorbing layer 300 and inside the second through holes TH2. That is, the window layer 600 is formed by depositing a transparent conductive material on the high resistance buffer layer 500 and inside the second through holes TH2.

In this case, the transparent conductive material is filled in the second through holes TH2, and the window layer 600 is in direct contact with the back electrode layer 200.

In this case, the window layer 600 may be formed by depositing a transparent conductive material including a conductive dopant. For example, the window layer 600 may be formed by depositing zinc oxide doped with aluminum.

The window layer 600 may be formed by two or more sources. In more detail, the window layer 600 may be formed using two or more sputtering targets. In more detail, the window layer 600 may be formed using a first sputtering target including a low concentration conductive dopant and a second sputtering target including a high concentration conductive dopant.

For example, to form the window layer 600, a first sputtering target comprising zinc oxide doped with aluminum at a low concentration and a second sputtering target comprising zinc oxide doped with a high concentration are used. Can be.

In this case, the power applied to the first sputtering target and the second sputtering target may vary with time. For example, when the window layer 600 is not deposited, high power is applied to the cathode corresponding to the second sputtering target, and low power is applied to the cathode corresponding to the first sputtering target.

Thereafter, the power applied to the second sputtering target may be gradually lowered, and the power applied to the first sputtering target may be gradually increased.

Accordingly, aluminum is doped to a higher concentration in the first region 610 under the window layer 600 and aluminum is lowered in the second region 620 above the window layer 600. Can be doped.

In more detail, the concentration of aluminum doped in the window layer 600 may be lowered from the light absorbing layer 300.

The concentration gradient of aluminum of the window layer 600 may be determined by appropriately adjusting the power applied to the first sputtering target and the second sputtering target.

Alternatively, the window layer 600 may be formed using an aluminum target and a zinc oxide target. For example, when the window layer 600 starts to be formed, high power is applied to the aluminum target. Thereafter, the power applied to the aluminum target may be gradually lowered.

Accordingly, aluminum may be doped to a higher concentration in the first region 610 of the window layer 600, and aluminum may be doped to a lower concentration in the second region 620 of the window layer 600. .

In more detail, the concentration of aluminum doped in the window layer 600 may be lowered from the light absorbing layer 300.

9, a portion of the buffer layer 400, the high resistance buffer layer 500, and the window layer 600 are removed to form third through holes TH3. Accordingly, the window layer 600 is patterned to define a plurality of windows and a plurality of cells C1, C2... The width of the third through holes TH3 may be about 80 μm to about 200 μm.

As such, according to the method of manufacturing the solar cell apparatus according to the embodiment, the solar cell apparatus including the connection part 700 having the improved connection characteristics and the window layer 600 having the improved characteristics may be provided. have.

In addition, the features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

Claims (13)

Board;
A back electrode layer disposed on the substrate;
A light absorbing layer disposed on the back electrode layer;
A window layer disposed on the light absorbing layer,
The window layer
A first region disposed adjacent the light absorbing layer; And
A second region disposed on the first region,
And the first region includes a conductive dopant at a higher concentration than the second region. The photovoltaic device of claim 1, wherein the concentration of the conductive dopant increases as the light absorbing layer approaches the light absorbing layer. The photovoltaic device of claim 1, wherein the conductive dopant is selected from the group consisting of aluminum (Al), alumina (Al 2 O 3 ), magnesium (Mg), and gallium (Ga). The method of claim 1, wherein the concentration of the conductive dopant in the first region increases as the light absorbing layer approaches the light absorbing layer.
The concentration of the conductive dopant in the second region is increased as the near to the light absorbing layer. 5. The method of claim 4, wherein the first gradient of the conductive dopant concentration to distance to the light absorbing layer in the first region is a second of the conductive dopant concentration to distance to the light absorbing layer in the second region. Solar power generation device corresponding to the gradient. 5. The method of claim 4, wherein the first gradient of the conductive dopant concentration to distance to the light absorbing layer in the first region is a second of the conductive dopant concentration to distance to the light absorbing layer in the second region. Larger photovoltaic device than a gradient. 5. The method of claim 4, wherein the first gradient of the conductive dopant concentration to distance to the light absorbing layer in the first region is a second of the conductive dopant concentration to distance to the light absorbing layer in the second region. Smaller photovoltaic device than a gradient. The method of claim 1, wherein the light absorbing layer is formed with a through groove,
It is formed integrally with the window layer, and includes a connecting portion connected to the back electrode layer,
The connection part includes a lower region in direct contact with the back electrode layer and an upper region disposed on the lower region,
And the lower region includes the conductive dopant at a higher concentration than the upper region. The method of claim 1, wherein the first region comprises 0.01 wt% to 0.3 wt% of the conductive dopant.
The second region is a photovoltaic device comprising the conductive dopant 0.3wt% to 5wt%. Forming a back electrode layer on the substrate;
Forming a light absorbing layer on the back electrode layer; And
Forming a window layer on the light absorbing layer;
The window layer
A first region disposed adjacent the light absorbing layer; And
A second region disposed on the first region,
And the first region includes a conductive dopant at a higher concentration than the second region. The method of claim 10, wherein the forming of the window layer includes simultaneously depositing a transparent conductive material and the conductive dopant on the light absorbing layer.
The amount of the conductive dopant deposited is reduced over time. The method of claim 11, wherein in the forming of the window layer, a first target including the transparent conductive material and a second target including the conductive dopant are used.
The power applied to the second target is reduced over time. The photovoltaic device of claim 10, wherein the forming of the window layer uses a plurality of targets including the conductive dopants at different concentrations.
KR1020100085424A 2010-09-01 2010-09-01 Solar cell apparatus and method of fabricating the same KR101144540B1 (en)

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