KR20120013523A - Thin Film Solar Cells And Manufacturing Method For The Same - Google Patents

Thin Film Solar Cells And Manufacturing Method For The Same Download PDF

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Publication number
KR20120013523A
KR20120013523A KR20100075529A KR20100075529A KR20120013523A KR 20120013523 A KR20120013523 A KR 20120013523A KR 20100075529 A KR20100075529 A KR 20100075529A KR 20100075529 A KR20100075529 A KR 20100075529A KR 20120013523 A KR20120013523 A KR 20120013523A
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South Korea
Prior art keywords
thin film
film solar
solar cell
scattering particles
layer
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KR20100075529A
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Korean (ko)
Inventor
김재현
박성기
박세희
성미린
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엘지디스플레이 주식회사
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Publication of KR20120013523A publication Critical patent/KR20120013523A/en

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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

A thin film solar cell according to an embodiment of the present invention includes a substrate, a first electrode positioned on one surface of the substrate, an absorption layer positioned on the first electrode, a second electrode positioned on the absorption layer, and the other surface of the substrate. And an antireflective layer comprising a low refractive index material and a plurality of scattering particles.

Description

Thin Film Solar Cells And Manufacturing Method For The Same

The present invention relates to a thin film solar cell and a method of manufacturing the same.

Recently, various researches have been conducted to replace existing fossil fuels in order to solve the energy problem. In particular, various studies have been conducted to utilize natural energy such as wind, nuclear power, and solar power to replace petroleum resources that will be exhausted within decades.

Unlike other energy sources, solar cells that use solar energy have unlimited resources and are environmentally friendly. Therefore, many studies have been conducted for decades since the Se solar cell was developed in 1983. Currently, solar cells using commercially available single crystal bulk silicon cannot be actively utilized due to high manufacturing cost and installation cost.

In order to solve this cost problem, researches on thin film solar cells have been actively conducted. Especially, thin film solar cells using amorphous silicon (a-Si: H) have attracted much attention as a technology for manufacturing large-area solar cells at low cost. I am getting it.

In general, the thin film solar cell may have a form in which a first electrode, an absorption layer, and a second electrode are stacked on a substrate, but the efficiency thereof is not satisfactory. Accordingly, research to improve the efficiency of solar cells using sunlight is ongoing.

Accordingly, the present invention provides a thin film solar cell and a method for manufacturing the same, which can improve the photoelectric conversion efficiency of the solar cell by reducing the reflectance of the sunlight incident to the solar cell and increasing the scattering ratio of transmitted light.

In order to achieve the above object, a thin-film solar cell according to an embodiment of the present invention is a substrate, a first electrode located on one surface of the substrate, an absorbing layer located on the first electrode, the first layer located on the absorbing layer Located on the other surface of the second electrode and the substrate, it may include an antireflection layer comprising a low refractive index material and a plurality of scattering particles.

The low refractive index material may be made of a silicon oxide (SiOx) -based material.

The plurality of scattering particles are selected from the group consisting of silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), tungsten oxide (WO 2 ), zirconium oxide (ZrO 2 ), hafnium oxide (HfO 2 ), and polystyrene. It may be made of any one or more.

The antireflective layer may have a thickness of 50 to 500 nm.

The particle diameter of the plurality of scattering particles may be 10 to 50% of the thickness of the antireflective layer.

The content of the plurality of scattering particles may be included in an amount of 1 to 10 parts by weight based on the content of the low refractive index material.

The plurality of scattering particles may be distributed to the lower side inside the anti-reflective layer.

The plurality of scattering particles are biased to an upper side of the inside of the anti-reflective layer, and may be distributed to protrude at least a part thereof.

The plurality of scattering particles may be uniformly distributed in the antireflective layer.

In addition, the method for manufacturing a thin film solar cell according to an embodiment of the present invention comprises the steps of forming an antireflection layer including a low refractive index material and a plurality of scattering particles on one surface of the substrate, to form a first electrode on the other surface of the substrate The method may include forming an absorbing layer on the first electrode and forming a second electrode on the absorbing layer.

The antireflective layer may be formed by mixing the low refractive index material and the plurality of scattering particles and coating the same on the substrate.

The antireflective layer may be formed by coating the low refractive index material on the substrate and then scattering the plurality of scattering particles.

The antireflective layer may be formed by coating the low refractive index material after scattering the plurality of scattering particles on the substrate.

The thin film solar cell of the present invention and the manufacturing method thereof have the advantage of improving the light scattering rate of incident sunlight to improve the photoelectric conversion efficiency.

1 is a view showing a thin film solar cell according to an embodiment of the present invention.
2a to 2c are views showing various structures of the antireflective layer of the present invention.
3a to 6 are views showing a manufacturing method of a thin film solar cell according to an embodiment of the present invention by process.
7 to 9 are SEM photographs showing anti-reflective layers of thin film solar cells prepared according to Experimental Examples 1 to 3 of the present invention, respectively.
10 to 12 are graphs showing the light transmittance of the glass substrate prepared according to Comparative Example and the light transmittance of the glass substrate prepared according to Experimental Examples 1 to 3 of the present invention, respectively.
13 is a graph measuring the light scattering properties of the glass substrate prepared according to Experimental Example 1 and Comparative Example of the present invention.
14 and 15 are graphs measuring the J sc and the photoelectric conversion efficiency of the thin film solar cell manufactured according to Experimental Example 1 and Comparative Example of the present invention.
16 is a graph measuring power generation efficiency according to the solar angle of the thin film solar cell manufactured according to Experimental Example 1 and Comparative Example of the present invention.

Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a view showing a thin film solar cell according to an embodiment of the present invention, Figure 2a to 2c is a view showing a variety of structures of the antireflective layer of the present invention.

Referring to FIG. 1, a thin film solar cell 100 according to an exemplary embodiment of the present invention includes a substrate 110, a first electrode 120 and a first electrode 120 positioned on one surface of the substrate 110. On the other side of the absorber layer 130, the second electrode 140 and the substrate 110 positioned on the absorbing layer 130, the low refractive index material 151 and the plurality of scattering particles 152 It may include an antireflection layer 150 including a.

The substrate 110 may be glass or a transparent resin film. As the glass, a flat plate glass containing silicon oxide (SiO 2 ) having high transparency and insulation property as a main component may be used.

The first electrode 120 may be made of a transparent conductive oxide or a metal. Examples of the transparent conductive oxide include indium tin oxide (ITO), tin oxide (SnO 2 ), indium (In) or fluorine (F) doped tin oxide (SnO 2 ), zinc oxide (ZnO), and gallium. Zinc oxide (ZnO) doped with (Ga) or aluminum (Al) may be used. In addition, silver (Ag) or aluminum (Al) may be used as the metal.

The first electrode 120 may be a single layer made of a transparent conductive oxide or a metal, but is not limited thereto. The first electrode 120 may be a multilayer in which two or more layers of the transparent conductive oxide / metal are stacked. In addition, although not shown, the surface of the first electrode 120 may have irregularities.

The absorption layer 130 may be made of amorphous silicon and may have a pin structure. The pin structure may be a structure consisting of a p + type amorphous silicon layer / i-type (intrinsic) amorphous silicon layer / n + amorphous silicon layer. However, the material of the absorbing layer 130 is not limited thereto.

Here, the pin structure absorbs sunlight from the silicon thin film layer when the sunlight is incident, the electron-hole is generated at this time. In the pin structure, electrons and holes generated earlier by the built-in potential generated by p-type and n-type are transferred to n-type and p-type semiconductors, and can be used.

In the present embodiment, the absorber layer 130 is shown as only one layer, but the absorber layer 130 may have a structure consisting of a p + type amorphous silicon layer / i type (intrinsic) amorphous silicon layer / n + amorphous silicon layer, and the like. It doesn't work.

The second electrode 140 may be made of a transparent conductive oxide or a metal like the first electrode 120. Examples of the transparent conductive oxide include indium tin oxide (ITO), tin oxide (SnO 2 ), indium (In) or fluorine (F) doped tin oxide (SnO 2 ), zinc oxide (ZnO), and gallium. Zinc oxide (ZnO) doped with (Ga) or aluminum (Al) may be used. Silver (Ag) or aluminum (Al) may be used as the metal.

The second electrode 140 may be a single layer made of a transparent conductive oxide or a metal, but is not limited thereto and may be a multilayer in which two or more layers of the transparent conductive oxide / metal are stacked.

The anti-reflective layer 150 serves to prevent reflection of sunlight incident from the outside on the substrate 110 and may include a plurality of scattering particles 152 dispersed in the low refractive index material 151.

The low refractive index material 151 is a low refractive index material that can alleviate the difference in refractive index between the substrate 110 made of glass and air, and may have a refractive index of 1.1 to 1.4. Such a material may be made of, for example, a silicon oxide (SiOx) -based material.

The plurality of scattering particles 152 serves to diffuse the sunlight incident from the outside, for example, silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), tungsten oxide (WO 2 ), zirconium oxide (ZrO 2 ), hafnium oxide (HfO 2 ) and polystyrene (polystyrene) may be made of any one or more selected from the group consisting of.

The antireflective layer 150 may have a structure in which the plurality of scattering particles 152 are dispersed in the low refractive index material 151, and the content of the plurality of scattering particles 152 may be 1 to the content of the low refractive index material 151. To 10 parts by weight. Here, when the content of the plurality of scattering particles 152 is 1 part by weight or more with respect to the content of the low refractive index material 151, there is an advantage that can scatter the sunlight incident on the anti-reflective layer 150 to improve the scattering rate of sunlight In this case, when the content of the plurality of scattering particles 152 is 10 parts by weight or less with respect to the content of the low refractive index material 151, there is an advantage that it is possible to prevent the transmittance of the incident sunlight is reduced.

In this case, the thickness of the antireflection layer 150 may be 50 to 500nm. Here, when the thickness of the antireflective layer 150 is 50 nm or more, there is an advantage of reducing the reflectance of incident sunlight, and when the thickness of the antireflective layer 150 is 500 nm or less, the thickness of the thin film solar cell is prevented from increasing. In addition, the reflectance of the visible light region may be further lowered, and the manufacturing process time of the anti-reflective layer 150 may be shortened.

In addition, the particle diameter of the plurality of scattering particles 152 may be 10 to 50% based on the thickness of the antireflective layer 150. Here, when the particle diameter of the plurality of scattering particles 152 is 10% or more with respect to the thickness of the non-reflective layer 150, the incident sunlight is scattered in the plurality of scattering particles 152 to improve the scattering rate of sunlight When the particle diameters of the plurality of scattering particles 152 are 50% or less with respect to the thickness of the antireflective layer 150, there is an advantage that the transmittance of incident sunlight can be prevented from being reduced.

Meanwhile, the plurality of scattering particles 152 dispersed in the low refractive index material 151 of the antireflective layer 150 may be variously distributed.

Referring to FIG. 2A, the scattering particles 152 may be uniformly distributed in the antireflective layer 150.

On the other hand, as shown in Figure 2b, the plurality of scattering particles 152 may be biasedly distributed in the lower side inside the anti-reflective layer 150, as shown in Figure 2c, the plurality of scattering particles 152 is anti-reflective It is biased above the inside of the layer 150 and may be distributed to protrude at least a part. However, the present invention is not limited thereto, and the scattering particles 152 may be variously distributed in the antireflective layer 150.

As described above, the thin film solar cell according to the exemplary embodiment of the present invention includes an antireflection layer including a low refractive index material and diffusion particles, thereby improving the incident amount of sunlight incident into the solar cell due to the low refractive index material, and diffusing the same. There is an advantage that the photoelectric conversion efficiency can be improved by increasing the scattering degree of the incident sunlight due to the particles.

Hereinafter, a manufacturing method of a thin film solar cell according to an embodiment of the present invention described above is as follows. Since the description of each component has been described above, it will be briefly described below.

3A to 6 are views illustrating a method of manufacturing a thin film solar cell according to one embodiment of the present invention.

The antireflective layer of the present invention may have different manufacturing methods depending on the structure thereof. That is, the structure in which the diffusion particles 152 are uniformly dispersed in the anti-reflective layer 150 shown in FIG. 2A, the structure in which the diffusion particles 152 are biased in the lower side in the anti-reflection layer 150 shown in FIG. 2B, and The diffusion particles 152 are biasedly distributed on the upper side of the anti-reflective layer 150 shown in FIG. 2C and the manufacturing method is changed according to the protruding structure.

First, a structure in which the diffusion particles are uniformly dispersed in the antireflection layer will be described with reference to FIG. 3A. 223). In this case, the solvent may be water, toluene, pyridine, quinoline, cyclohexanone, acetone, tetrahydrofuran, isopropyl ether, ethyl acetate, butyl acetate, isopropyl alcohol, butyl alcohol, dimethylacetamide, dimethylformamide, and the like. have.

Subsequently, the prepared dispersion solution 223 is coated on the substrate 210. At this time, the method of applying the dispersion solution 223 may use a general liquid coating technique, for example, it may be used, such as spray coating, silk coating, spin coating, inkjet coating, roll printing coating.

The substrate 210 coated with the dispersion solution 223 is heat-treated at a temperature of 100 to 200 degrees to form an antireflection layer 220 including the low refractive index material 221 and the plurality of scattering particles 222.

Therefore, the plurality of scattering particles 222 uniformly mixed in the low refractive index material 221 may be dispersed in the non-reflective layer 220 in a uniform distribution.

On the contrary, referring to FIG. 3B, a structure in which diffusion particles are dispersed and protruded on the upper side of the anti-reflective layer will be described. The low refractive index material 221 made of the above-described liquid phase is applied onto the substrate 210. Subsequently, the diffusion particles 222 are scattered on the low refractive index material 221 and then heat-treated to form the antireflection layer 220.

Therefore, the diffusion particles 222 may be formed to protrude partially while the diffusion particles 222 are biasedly dispersed above the manufactured antireflective layer 220.

Alternatively, the low refractive index material 221 may be applied onto the substrate 210, heat treated for several seconds, and then scattered and heat treated with the diffusion particles 222 to form the antireflective layer 220.

In addition, referring to FIG. 3C, a structure in which diffused particles are biased and dispersed under a non-reflective layer, after scattering the diffused particles 222 on a substrate 210, the low refractive index material made of the above-described liquid phase ( 221 is applied onto the substrate 210 and heat treated to form the antireflective layer 220.

Therefore, the diffusion particles 222 may be formed to be dispersed in the lower side in the manufactured antireflection layer 220.

Next, referring to FIG. 4, the first electrode 230 is formed on the other surface of the substrate 210, that is, the other surface of the substrate 210 facing the antireflective layer 220. Hereinafter, an antireflective layer formed by the method of FIG. 3A will be described as an example.

The first electrode 230 may be formed by chemical vapor deposition (CVD), physical vapor deposition (PVD), electron beam (E-beam), or the like.

Next, the first electrode 230 is patterned. In this case, a method of patterning the first electrode 230 may be a photoresist method, a sand blast method, a laser scribing method, or the like. Accordingly, the first electrode 230 may be separated by the first patterned line 235.

5, the absorption layer 240 is formed on the first electrode 230 where the patterning process is completed. The absorber layer 240 may be deposited by plasma chemical vapor deposition (PECVD).

Next, the absorbing layer 240 is patterned. In this case, the absorbing layer 240 in the region spaced apart from the patterned first patterning line 235 is patterned. Here, as a method of patterning the absorbing layer 240, a photoresist method, a sand blast method, a laser scribing method, or the like may be used. Thus, the absorbing layer 240 may be separated by the second patterning line 245.

Next, referring to FIG. 6, the second electrode 250 is formed on the substrate 210 where the patterning process of the absorbing layer 240 is completed.

Like the first electrode 230, the second electrode 250 may be formed by chemical vapor deposition (CVD), physical vapor deposition (PVD), or electron beam (E-beam) method. have.

Finally, for the electrical insulation, the absorbing layer 240 and the second electrode 250 formed on the substrate 210 are patterned. In this case, a region spaced apart from the first patterning line 235 and the second patterning line 245 described above may be patterned to be electrically insulated by the third patterning line 255.

Therefore, a thin film solar cell according to an embodiment of the present invention can be manufactured.

As described above, the thin film solar cell according to the exemplary embodiment of the present invention includes an antireflection layer including a low refractive index material and diffusion particles, thereby improving the incident amount of sunlight incident into the solar cell due to the low refractive index material, and diffusing the same. There is an advantage that the photoelectric conversion efficiency can be improved by increasing the scattering degree of the incident sunlight due to the particles.

Hereinafter, preferred experimental examples will be disclosed to aid in understanding the present invention. However, the following experimental examples are merely to illustrate the present invention is not limited to the following experimental examples.

Experimental Example 1

On one surface of the glass substrate, titanium oxide particles, which are scattering particles, were mixed with liquid silicon oxide, which is a low refractive index material, to form an antireflection layer having a thickness of 200 nm. At this time, the content of the scattering particles were mixed in 1 part by weight based on the content of the low refractive index material.

Then, the first electrode, the absorption layer, and the second electrode were formed on the other surface of the glass substrate to manufacture a thin film solar cell. (See FIG. 7).

Experimental Example 2

Under the same process conditions as those of Experimental Example 1 described above, a thin film solar cell was manufactured by forming an antireflective layer made of only a low refractive index material except for scattering particles. (See FIG. 8)

Experimental Example 3

Under the same process conditions as in Experimental Example 2 described above, the low refractive index material was changed to siloxane (sixoxane) to prepare a thin film solar cell. (See FIG. 9)

Comparative Example

Under the same process conditions as in Experimental Example 1, a thin film solar cell was manufactured without forming an antireflection layer.

SEM photographs of the antireflective layer prepared according to Experimental Examples 1 to 3 described above are shown in FIGS. 7 to 9, respectively.

In addition, the light transmittances of the glass substrates prepared according to Experimental Examples 1 to 3 were measured, and the results are shown in FIGS. 10, 11, and 12, respectively, compared to the light transmittances of the glass substrates prepared according to Comparative Examples. Light scattering properties of the glass substrates prepared according to the present invention are shown in FIG. 13.

In addition, J sc (short-circuit photocurrent density) and photoelectric conversion efficiency of the thin film solar cells manufactured according to Experimental Example 1 and Comparative Example were measured and shown in Table 1, FIG. 14 and FIG. 15.

In addition, the power generation efficiency (power generation efficiency during the day) of the thin film solar cells manufactured according to Experimental Example 1 and Comparative Example was measured and shown in Table 2 and FIG. 16.

First, referring to FIGS. 10 to 12, in the case of the light transmittance of the glass substrate, Experimental Examples 1 to 3 it was found that the transmittance is increased compared to the comparative example.

In addition, referring to FIG. 13, in the case of light scattering characteristics of the glass substrate, that is, haze, the solar cell of Experimental Example 1 was found to be about 3% higher than the solar cell of Comparative Example.

And, looking at the following Table 1, 14 and 15, it can be seen that the J sc and the photoelectric conversion efficiency of the thin film solar cell of Experimental Example 1 is improved than Comparative Example 1.

Comparative example Experimental Example 1 increase Average Jsc 7.68 8.24 +0.56 Average photoelectric conversion efficiency 7.79 8.11 +0.32

In addition, looking at Table 2 and Figure 16, it was found that the power generation efficiency of the thin film solar cell of Experimental Example 1 also improved than the comparative example.

Angle 0 10 20 30 40 50 60 70 80 Comparative example 7.1 7.3 6.9 6.5 5.7 4.8 3.9 2.7 1.0 Experimental Example 1 7.6 7.5 7.1 6.7 6.2 5.5 4.5 3.3 2.2 increase +0.3 +0.2 +0.2 +0.2 +0.5 +0.7 +0.6 +0.6 +1.2

(In this case, the angle sets the angle at which the incident angle of the glass substrate and the sunlight is perpendicular to 0.)

As described above, the thin film solar cell of the present invention is provided with an antireflective layer including scattering particles, thereby improving the J sc and the photoelectric conversion efficiency of the thin film solar cell.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be practiced. Therefore, the embodiments described above are to be understood as illustrative and not restrictive in all aspects. In addition, the scope of the present invention is shown by the claims below, rather than the above detailed description. Also, it is to be construed that all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention.

Claims (13)

Board;
A first electrode on one surface of the substrate;
An absorbing layer on the first electrode;
A second electrode on the absorber layer; And
Located on the other side of the substrate, a thin film solar cell including a low refractive index material and a non-reflective layer comprising a plurality of scattering particles.
The method of claim 1,
The low refractive index material is a thin film solar cell made of a silicon oxide (SiOx) -based material.
The method of claim 1,
The plurality of scattering particles are selected from the group consisting of silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), tungsten oxide (WO 2 ), zirconium oxide (ZrO 2 ), hafnium oxide (HfO 2 ), and polystyrene. Thin film solar cell consisting of any one or more.
The method of claim 1,
The thickness of the anti-reflective layer is 50 to 500nm thin film solar cell.
The method of claim 1,
A particle diameter of the plurality of scattering particles is 10 to 50% of the thickness of the anti-reflective layer.
The method of claim 1,
The amount of the plurality of scattering particles is a thin film solar cell containing 1 to 10 parts by weight based on the content of the low refractive index material.
The method of claim 1,
The plurality of scattering particles are thin film solar cells are distributed to the lower side inside the anti-reflective layer.
The method of claim 1,
The plurality of scattering particles are biased to the upper side of the inside of the non-reflective layer, wherein at least a portion of the thin film solar cell is distributed.
The method of claim 1,
The plurality of scattering particles are thin film solar cell uniformly distributed in the anti-reflective layer.
Forming an antireflection layer including a low refractive index material and a plurality of scattering particles on one surface of the substrate;
Forming a first electrode on the other surface of the substrate;
Forming an absorbing layer on the first electrode; And
A method of manufacturing a thin film solar cell comprising forming a second electrode on the absorber layer.
The method of claim 10,
The anti-reflective layer is a method of manufacturing a thin film solar cell formed by mixing the low refractive index material and the plurality of scattering particles and coated on the substrate.
The method of claim 10,
The anti-reflective layer is formed by coating the low refractive index material on the substrate and then scattering the plurality of scattering particles.
The method of claim 10,
The antireflective layer is formed by coating the low refractive index material after scattering the plurality of scattering particles on the substrate.
KR20100075529A 2010-08-05 2010-08-05 Thin Film Solar Cells And Manufacturing Method For The Same KR20120013523A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104992992A (en) * 2015-06-08 2015-10-21 常熟苏大低碳应用技术研究院有限公司 Ferroelectric thin-film solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104992992A (en) * 2015-06-08 2015-10-21 常熟苏大低碳应用技术研究院有限公司 Ferroelectric thin-film solar cell

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