KR20120006701A - Solar cell having finger line with selective emitter and method for fabricating the same - Google Patents

Solar cell having finger line with selective emitter and method for fabricating the same Download PDF

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Publication number
KR20120006701A
KR20120006701A KR1020100067313A KR20100067313A KR20120006701A KR 20120006701 A KR20120006701 A KR 20120006701A KR 1020100067313 A KR1020100067313 A KR 1020100067313A KR 20100067313 A KR20100067313 A KR 20100067313A KR 20120006701 A KR20120006701 A KR 20120006701A
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KR
South Korea
Prior art keywords
finger line
high concentration
substrate
semiconductor layer
solar cell
Prior art date
Application number
KR1020100067313A
Other languages
Korean (ko)
Inventor
배기만
Original Assignee
현대중공업 주식회사
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Publication date
Application filed by 현대중공업 주식회사 filed Critical 현대중공업 주식회사
Priority to KR1020100067313A priority Critical patent/KR20120006701A/en
Publication of KR20120006701A publication Critical patent/KR20120006701A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

The present invention relates to a solar cell and a method for manufacturing the same having a high density emitter combined finger line that can perform a role of a finger line and a selective emitter at the same time to improve the process efficiency and save material, the high concentration according to the present invention A method of manufacturing a solar cell having an emitter combined finger line includes preparing a crystalline silicon substrate of a first conductivity type, forming a second conductive semiconductor layer at a predetermined depth along the surface of the substrate, and Screen printing the metal paste on the surface of the substrate at a predetermined interval, and then firing to form a finger-concentrated dual-use fingerline; And forming a bus bar on the anti-reflection film, and electrically connecting the bus bar and the high concentration emitter combined finger line. Including the step of connecting is characterized in that a formed.

Description

Solar cell having a high concentration emitter combined finger line and a method of manufacturing the same {solar cell having finger line with selective emitter and method for fabricating the same}

The present invention relates to a solar cell having a high density emitter combined finger line and a method of manufacturing the same, and more particularly, to perform a role of a finger line and a selective emitter simultaneously to improve the process efficiency and to save material It relates to a solar cell having an emitter combined finger line and a method of manufacturing the same.

A solar cell is a key element of photovoltaic power generation that converts sunlight directly into electricity, and is basically a diode composed of a p-n junction. In the process of converting sunlight into electricity by solar cells, when solar light is incident on the pn junction of solar cells, electron-hole pairs are generated, and electrons move to n layers and holes move to p layers by the electric field. Photovoltaic power is generated between the pn junctions, and when a load or a system is connected to both ends of the solar cell, current flows to generate power.

Referring to the structure of the solar cell, as shown in FIG. 1, an n-type semiconductor layer 102 is provided on the p-type semiconductor layer 101, and an upper portion of the n-type semiconductor layer 102 and a p-type semiconductor layer are provided. The front electrode 105 and the back electrode 106 are provided at the bottom, respectively.

In this case, the p-type semiconductor layer 101 and the n-type semiconductor layer 102 is implemented in one substrate, the lower portion of the substrate is a p-type semiconductor layer 101, the upper portion of the substrate is an n-type semiconductor layer 102 In general, an n-type semiconductor layer 102 is formed by implanting and diffusing n-type impurity ions around a p-type silicon substrate in a state where a p-type silicon substrate is prepared. In addition, an anti-reflection film 103 is provided on the n-type semiconductor layer 102 to minimize surface reflection.

On the other hand, the front electrode 104 is divided into a finger line (104a) and a bus bar (bus bar) (104b) in detail. The fingerline 104a is evenly disposed on the front surface of the solar cell to transfer carriers integrated in the n-type semiconductor layer 102, and the busbar 104b is a ribbon of a solar cell module (ribbon) Electrically connected to a plurality of finger lines.

The fingerline 104a and the busbar 104b are usually formed by screen printing a metal face, which has a problem of high contact resistance between the silicon substrate surface, that is, the n-type semiconductor layer 102 and the fingerline 104a. have. In order to solve this problem, a method of forming a so-called selective emitter is proposed, in which a high concentration of emitter 106 is formed by implanting a high concentration of impurity ions into a portion where a fingerline 104a is formed. There is a bar. However, such a structure has a disadvantage in that the high concentration emitter 106 and the finger line 104a must be formed, respectively, and the process is complicated and material consumption is large.

The present invention has been made to solve the above problems, the solar cell having a high density emitter combined finger line that can improve the process efficiency and save material by performing the role of a finger line and a selective emitter at the same time and Its purpose is to provide its manufacturing method.

A solar cell having a high concentration emitter combined finger line according to the present invention for achieving the above object comprises a first conductive crystalline silicon substrate, a second conductive semiconductor layer formed to a predetermined depth along the substrate surface; And a high density emitter combined finger line disposed at regular intervals along the surface of the substrate, electrically connected to the semiconductor layer, and simultaneously serving as a high concentration emitter and a finger line. An anti-reflection film provided on the front surface of the substrate including a finger line and a bus bar provided on the anti-reflection film, and electrically connected to the high concentration emitter combined finger line.

According to the present invention, there is provided a method of manufacturing a solar cell having a high concentration emitter combined finger line, comprising: preparing a crystalline silicon substrate of a first conductivity type, and forming a second conductive semiconductor layer at a predetermined depth along the surface of the substrate; And screen-printing the metal paste on the surface of the substrate at a predetermined interval, and then firing to form a high density emitter combined finger line, and a top surface of the substrate including the high emitter combined finger line and the semiconductor layer. And forming a bus bar on the anti-reflection film, and electrically connecting the bus bar and the finger emitter combined with the high concentration emitter.

Solar cell having a high concentration emitter combined finger line according to the present invention and its manufacturing method has the following effects.

The role of the high concentration emitter and the finger line is simultaneously performed through one high emitter combined finger line, thereby improving process efficiency and improving photoelectric conversion efficiency.

1 is a block diagram of a solar cell according to the prior art.
2 is a block diagram of a solar cell having a high concentration emitter combined finger line according to an embodiment of the present invention.
3A to 3D are cross-sectional views illustrating a method of manufacturing a solar cell having a high concentration emitter combined finger line according to an embodiment of the present invention.

Hereinafter, a solar cell having a high concentration emitter combined finger line according to an embodiment of the present invention and a manufacturing method thereof will be described in detail with reference to the accompanying drawings.

Referring to FIG. 2, a solar cell having a high concentration emitter combined finger line according to an embodiment of the present invention first includes a crystalline silicon substrate 301 of a first conductivity type. Here, the first conductivity type may be p-type or n-type, the second conductivity type described later is the opposite of the first conductivity type, in the following description it is based on the first conductivity type is p-type.

The surface of the substrate 301 is processed in the form of irregularities 302 to minimize the reflection of light, and the second conductive semiconductor layer 303 is formed along a surface of the substrate 301 at a predetermined depth. In addition, the high concentration emitter combined finger line 304 electrically connected to the semiconductor layer 303 is repeatedly arranged at regular intervals. The high concentration emitter combined finger line 304 simultaneously serves as a high concentration emitter and a finger line 304, in the conventional case, a high concentration emitter and a finger line 304 are provided, respectively, in the present invention, one high concentration Through the emitter combined finger line 304 may serve as a high concentration emitter and finger line 304 at the same time.

An anti-reflection film 305 is provided on the high concentration emitter combined finger line 304 and the semiconductor layer 303, and a bus bar 306 is provided on the anti-reflection film 305. The bus bar 306 is electrically connected to the high emitter combined finger line 304 through the separate medium (not shown).

Next, a method of manufacturing a solar cell having a high concentration emitter combined finger line 304 according to an embodiment of the present invention.

First, as shown in FIG. 3A, a crystalline silicon substrate 301 of the first conductivity type is prepared, and texturing is performed so that the unevenness 302 is formed on the upper surface of the silicon substrate 301 of the first conductivity type. Proceed with the process. The texturing process is to reduce light reflection on the surface of the substrate 301, and may be performed using a dry etching method such as wet etching or reactive ion etching.

In the state where the texturing process is completed, the diffusion process is performed to form the semiconductor layer 303 as shown in FIG. 3B. Specifically, the silicon substrate 301 is provided in a chamber, and a gas (for example, POCl 2 ) containing a second conductivity type impurity ion, that is, an n-type impurity ion, is supplied into the chamber to form phosphorus (P) ions. Allow diffusion. As a result, the semiconductor layer 303 may be formed on the upper and lower layers of the substrate 301, and phosphorus (P) ions may be diffused on the side surface of the substrate 301 to form the semiconductor layer 303.

On the other hand, the diffusion process of the n-type impurity ions, in addition to the method using a gaseous gas as described above, the silicon substrate 301 in a solution containing n-type impurity ions, for example, a phosphoric acid (H 3 PO 4 ) solution The semiconductor layer 303 may be formed by depositing and allowing phosphorus (P) ions to diffuse into the substrate 301 through subsequent heat treatment. In addition, when the second conductivity type impurity ions are p-type, the impurity ions forming the semiconductor layer 303 may be boron (B).

In the state where the semiconductor layer 303 is formed, as shown in FIG. 3C, the process of forming the high concentration emitter combined finger line 304 is performed. The high density emitter combined finger line 304 simultaneously serves as a high concentration emitter and a finger line 304, and solves the problem of contact resistance between the conventional finger line 304 and the semiconductor layer 303. do. Specifically, the semiconductor paste 303 is screen printed and fired on the entire surface of the substrate 301 on which the semiconductor layer 303 is formed to form a high emitter combined finger line 304. At this time, the width and spacing of the metal paste applied on the substrate 301, that is, the width and spacing of the high concentration emitter combined fingerline 304 correspond to the geometric size of the conventional fingerline 304. In the conventional case, a structure in which several finger lines 304 are connected to one high concentration emitter, or in the case of the present invention, each finger line 304 corresponds to each high concentration emitter.

Next, as shown in FIG. 3D, an anti-reflection film 305 is formed on the entire surface of the substrate 301. The anti-reflection film 305 may be formed of a silicon nitride film (Si 3 N 4 ). Subsequently, after the conductive material is coated on the anti-reflection film 305, the firing process is performed to form the bus bar 306 and to form the back electrode 307 on the rear surface of the substrate 301. Solar cell manufacturing method having a high concentration emitter combined finger line according to an embodiment is completed. At this time, the bus bar 306 is electrically connected to the high emitter combined finger line 304 through a separate conductive medium.

301: crystalline silicon substrate of the first conductivity type
302: irregularities
303: semiconductor layer of the second conductivity type
304: High density emitter combined finger line
305: antireflection film
306: Busbar
307: rear electrode

Claims (2)

A crystalline silicon substrate of a first conductivity type;
A second conductive semiconductor layer 303 formed at a predetermined depth along the surface of the substrate;
A high concentration emitter combined finger line disposed at regular intervals along the surface of the substrate and electrically connected to the semiconductor layer 303 and simultaneously serving as a high concentration emitter and a finger line;
An anti-reflection film provided on the entire surface of the substrate including the semiconductor layer 303 and a high concentration emitter combined finger line; And
The solar cell provided on the anti-reflection film, and comprises a bus bar electrically coupled to the high concentration emitter combined finger line.
Preparing a crystalline silicon substrate of a first conductivity type;
Forming a second conductive semiconductor layer (303) at a predetermined depth along the surface of the substrate;
Screen printing the metal paste on the surface of the substrate at a predetermined interval, and then firing to form a high concentration emitter combined finger line;
Forming an anti-reflection film on the entire surface of the substrate including the high concentration emitter combined finger line and the semiconductor layer 303; And
Forming a bus bar on the anti-reflection film and electrically connecting the bus bar and the high concentration emitter combined finger line comprising the step of manufacturing a solar cell having a high concentration emitter combined finger line.
KR1020100067313A 2010-07-13 2010-07-13 Solar cell having finger line with selective emitter and method for fabricating the same KR20120006701A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020100067313A KR20120006701A (en) 2010-07-13 2010-07-13 Solar cell having finger line with selective emitter and method for fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100067313A KR20120006701A (en) 2010-07-13 2010-07-13 Solar cell having finger line with selective emitter and method for fabricating the same

Publications (1)

Publication Number Publication Date
KR20120006701A true KR20120006701A (en) 2012-01-19

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KR1020100067313A KR20120006701A (en) 2010-07-13 2010-07-13 Solar cell having finger line with selective emitter and method for fabricating the same

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