KR20120005349A - Data strobe signal input circuit - Google Patents
Data strobe signal input circuit Download PDFInfo
- Publication number
- KR20120005349A KR20120005349A KR1020100066049A KR20100066049A KR20120005349A KR 20120005349 A KR20120005349 A KR 20120005349A KR 1020100066049 A KR1020100066049 A KR 1020100066049A KR 20100066049 A KR20100066049 A KR 20100066049A KR 20120005349 A KR20120005349 A KR 20120005349A
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- KR
- South Korea
- Prior art keywords
- signal
- data strobe
- buffering
- buffer enable
- synchronization
- Prior art date
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1093—Input synchronization
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
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Abstract
Description
The present invention relates to a data strobe signal input circuit.
In the semiconductor memory device, efforts have been made to improve the operation speed while increasing the degree of integration. In an effort to improve the operation speed, a so-called double date rate (DDR) synchronous memory device that inputs and outputs 2 bits of data to 1 tCK of a clock has been proposed. In addition, the semiconductor memory device transmits and receives a data strobe signal to and from the memory controller in order to accurately align the data input / output points in the high speed operation.
The data strobe signal goes through the postamble and returns to the high impedance state. However, there is a case where a ringing phenomenon occurs due to noise before the data strobe signal returns to high impedance. As such, when a ringing phenomenon occurs after the postamble, an error occurs in the process of latching data with the data strobe signal.
Therefore, recent semiconductor memory devices have circuits for preventing errors due to ringing of the data strobe signal.
1 is a block diagram showing a data strobe signal input circuit according to the prior art.
As illustrated in FIG. 1, the data strobe signal input circuit shifts the internal light pulse signal WTINT according to the internal clock ICLK to generate the first to fourth shifting signals WT1R to WT4R. (1), a buffer enable
Referring to the operation of the data strobe signal input circuit as shown in FIG. 2 is a timing diagram illustrating a case where a data strobe signal is input at a normal time point (tDQSSnor).
As illustrated in FIG. 2, when the light command WT is input at a time t1, the internal light pulse signal WTINT is enabled at a high level at time t2. When the internal light pulse signal WTINT is generated, the shifting
Since the dummy pulse DP due to the ringing phenomenon is generated in the data strobe signal DQS after the time t3 at which the buffer enable signal DISDSP is disabled, the dummy pulse DP is connected to the data strobe rising signal DQSR. It does not affect the generation of the data strobe polling signal (DQSF). Accordingly, the semiconductor memory device may stably latch data input together with the data strobe signal DQS according to the data strobe rising signal DQSR and the data strobe polling signal DQSF.
3 is a timing diagram illustrating a case where a data strobe signal is input at a early time (tDQSSmin).
As shown in FIG. 3, when the light command WT is input at a time t1, the internal light pulse signal WTINT is enabled at a high level at time t2. When the internal light pulse signal WTINT is generated, the shifting
However, when the data strobe signal DQS is input as early as shown in FIG. 3, the dummy pulse DP due to the ringing occurs before the time point t4 at which the buffer enable signal DISDSP is disabled. Is generated). That is, the dummy pulse DP exists in the enable period of the buffer enable signal DISDSP, which affects the generation of the data strobe rising signal DQSR and the data strobe polling signal DQSF. Accordingly, the dummy pulse DP1 is also generated in the data strobe rising signal DQSR and the data strobe polling signal DQSF, so that data input together with the data strobe signal DQS cannot be stably latched.
The present invention discloses a data strobe signal input circuit that can stably receive even when the input time point of the data strobe signal is varied.
To this end, the present invention buffers a data strobe signal and outputs it as a buffering signal. Provided is a data strobe signal input circuit including a buffer enable signal generation unit for generating a buffer enable signal for disabling after a set bus-transition period.
1 is a block diagram showing a data strobe signal input circuit according to the prior art.
2 and 3 are timing diagrams illustrating an operation of a data strobe signal input circuit as shown in FIG. 1.
4 is a block diagram illustrating a data strobe signal input circuit according to an exemplary embodiment of the present invention.
FIG. 5 is a circuit diagram illustrating a buffering signal generator shown in FIG. 4.
FIG. 6 is a circuit diagram illustrating a section signal generator shown in FIG. 4.
FIG. 7 is a circuit diagram illustrating a buffer enable signal output unit shown in FIG. 4.
FIG. 8 is a circuit diagram illustrating a phase divider shown in FIG. 4.
9 to 11 are timing diagrams illustrating operations of a data strobe signal input circuit as shown in FIG. 4.
Hereinafter, the present invention will be described in more detail with reference to Examples. These embodiments are only for illustrating the present invention, and the scope of rights of the present invention is not limited by these embodiments.
4 is a block diagram illustrating a data strobe signal input circuit according to an exemplary embodiment of the present invention.
As shown in FIG. 4, a
As shown in FIG. 5, the
The
The buffer enable
As shown in FIG. 6, the interval
The section
As shown in FIG. 7, the buffer enable
As illustrated in FIG. 8, the
The operation of the data strobe signal input circuit having such a configuration will be described below.
FIG. 9 is a timing diagram illustrating the operation of the data strobe signal input circuit as shown in FIG. 4, in which the input time point of the data strobe signal is normal tDQSSnor.
As shown in FIG. 9, when the light command WT is input at the time t1 of the external clock ECLK, the internal light pulse signal WTINT is enabled at a high level at the time t2 of the internal clock ICLK. Here, the internal clock ICLK is generated by buffering the external clock ECLK.
Subsequently, when the data strobe signal DQS is input at the time t3, the
Subsequently, when the buffering signal DQSIR is generated, the
Subsequently, the buffer enable
The buffer enable signal DISDSP generated as described above is enabled at a high level in response to the rising time of the internal light pulse signal WTINT, and is disabled at a low level in response to the fourth rising time of the synchronization signal DQSP. do. Accordingly, the
Accordingly, since the signal according to the dummy pulse DP is not generated in the buffering signal DQSIR, the data strobe rising signal DQSR and the data strobe polling signal DQSF are stably generated, thereby stably latching the data. can do.
In general, the transition time point of the data strobe signal DQS changes according to the set bus trend. For example, if the bus trance is 4, the data strobe signal DQS is made four times. If the bus trance is 8, the data strobe signal DQS is made eight times. Therefore, when the disable point of the buffer enable signal DISDSP is set according to the bus trend as in the present embodiment, the dummy pulse DP of the data strobe signal DQS due to the ringing phenomenon is not buffered. That is, since the buffering signal DQSIR can be generated stably, the data input together with the data strobe signal DQS can be stably latched.
If the data strobe signal DQS is input to the fast time point tDQSSmin as shown in FIG. 10, the disable time point of the first and second section signals WT2R and WT4R detects a polling time point of the buffering signal DQSIR. And one of the first and second section signals WT2R and WT4R are output as the buffer enable signal DISDSP according to the set bus trend, and thus the buffering signal DQSIR. ) Does not include the dummy pulse DP of the data strobe signal DQS.
11, the dummy pulse DP of the data strobe signal DQS is not included in the buffering signal DQSIR even when the data strobe signal DQS is input at the slow time tDQSSmax as shown in FIG.
11: buffering signal generator
12: buffer enable signal generator
13: phase divider
Claims (13)
And a buffer enable signal generator configured to enable a buffer enable signal according to an internal light pulse signal and to disable a buffer enable signal after a bus-transition period set in synchronization with the buffering signal.
A buffer unit for buffering the data strobe signal and outputting it as a pre-buffering signal; And
And a buffering signal output unit configured to output the pre-buffering signal as the buffering signal in response to the buffer enable signal.
A section signal generation unit configured to enable first and second section signals according to the internal light pulse signal, wherein the first and second section signals are disabled in synchronization with the buffering signal; And
And a buffer enable signal output unit configured to output one of the first and second interval signals as the buffer enable signal according to the set bus trend.
An edge detector which detects a polling time of the buffering signal and outputs the synchronization signal; And
And a section signal output unit configured to sequentially shift the pull-up voltage according to the synchronization signal to generate the first and second section signals.
A first shifter shifting the pull-up voltage according to the synchronization signal to output a first shifting signal;
A second shifter for shifting the first shifting signal according to the synchronization signal and outputting the first shifting signal;
A third shifter configured to shift the first interval signal according to the synchronization signal and output a second shifting signal; And
And a fourth shifter for shifting the second shifting signal according to the synchronization signal and outputting the second shifting signal as the second interval signal.
A second logic circuit for drawing the first interval signal and the bus-transmission control signal and outputting them as pre-buffer enable signals; And
And a third logic circuit for knocking out the pre-buffer enable signal and the second interval signal and outputting the buffered enable signal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100066049A KR20120005349A (en) | 2010-07-08 | 2010-07-08 | Data strobe signal input circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100066049A KR20120005349A (en) | 2010-07-08 | 2010-07-08 | Data strobe signal input circuit |
Publications (1)
Publication Number | Publication Date |
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KR20120005349A true KR20120005349A (en) | 2012-01-16 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020100066049A KR20120005349A (en) | 2010-07-08 | 2010-07-08 | Data strobe signal input circuit |
Country Status (1)
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KR (1) | KR20120005349A (en) |
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2010
- 2010-07-08 KR KR1020100066049A patent/KR20120005349A/en not_active Application Discontinuation
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