KR20120002257A - Aluminium paste composition for back electrode of solar cell - Google Patents
Aluminium paste composition for back electrode of solar cell Download PDFInfo
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- KR20120002257A KR20120002257A KR1020100063047A KR20100063047A KR20120002257A KR 20120002257 A KR20120002257 A KR 20120002257A KR 1020100063047 A KR1020100063047 A KR 1020100063047A KR 20100063047 A KR20100063047 A KR 20100063047A KR 20120002257 A KR20120002257 A KR 20120002257A
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- solar cell
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 57
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 47
- 239000000203 mixture Substances 0.000 title claims abstract description 33
- 239000004411 aluminium Substances 0.000 title 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000011521 glass Substances 0.000 claims abstract description 24
- 239000002245 particle Substances 0.000 claims abstract description 21
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 16
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- 239000002952 polymeric resin Substances 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 7
- 229920003002 synthetic resin Polymers 0.000 claims description 7
- 239000000654 additive Substances 0.000 claims description 6
- 230000000996 additive effect Effects 0.000 claims description 5
- 239000013008 thixotropic agent Substances 0.000 claims description 5
- 239000000080 wetting agent Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 230000005684 electric field Effects 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 238000010304 firing Methods 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 229910052709 silver Inorganic materials 0.000 description 12
- 239000004332 silver Substances 0.000 description 12
- -1 glycerin ester Chemical class 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 229940051841 polyoxyethylene ether Drugs 0.000 description 5
- 229920000056 polyoxyethylene ether Polymers 0.000 description 5
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 235000014113 dietary fatty acids Nutrition 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 229920001249 ethyl cellulose Polymers 0.000 description 3
- 235000019325 ethyl cellulose Nutrition 0.000 description 3
- 239000000194 fatty acid Substances 0.000 description 3
- 229930195729 fatty acid Natural products 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- ULQISTXYYBZJSJ-UHFFFAOYSA-N 12-hydroxyoctadecanoic acid Chemical compound CCCCCCC(O)CCCCCCCCCCC(O)=O ULQISTXYYBZJSJ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerol Natural products OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 235000011187 glycerol Nutrition 0.000 description 2
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 1
- IBLKWZIFZMJLFL-UHFFFAOYSA-N 1-phenoxypropan-2-ol Chemical compound CC(O)COC1=CC=CC=C1 IBLKWZIFZMJLFL-UHFFFAOYSA-N 0.000 description 1
- 229940114072 12-hydroxystearic acid Drugs 0.000 description 1
- WMDZKDKPYCNCDZ-UHFFFAOYSA-N 2-(2-butoxypropoxy)propan-1-ol Chemical compound CCCCOC(C)COC(C)CO WMDZKDKPYCNCDZ-UHFFFAOYSA-N 0.000 description 1
- GZMAAYIALGURDQ-UHFFFAOYSA-N 2-(2-hexoxyethoxy)ethanol Chemical compound CCCCCCOCCOCCO GZMAAYIALGURDQ-UHFFFAOYSA-N 0.000 description 1
- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 description 1
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 description 1
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 description 1
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- UPGSWASWQBLSKZ-UHFFFAOYSA-N 2-hexoxyethanol Chemical compound CCCCCCOCCO UPGSWASWQBLSKZ-UHFFFAOYSA-N 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 125000002877 alkyl aryl group Chemical group 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000003906 humectant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J17/00—Gas-filled discharge tubes with solid cathode
- H01J17/38—Cold-cathode tubes
- H01J17/48—Cold-cathode tubes with more than one cathode or anode, e.g. sequence-discharge tube, counting tube, dekatron
- H01J17/49—Display panels, e.g. with crossed electrodes, e.g. making use of direct current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
본 발명은 태양전지 후면 전극용 알루미늄 페이스트 조성물에 관한 것이다.The present invention relates to an aluminum paste composition for a solar cell back electrode.
실리콘 결정형 태양전지는 P형 실리콘 웨이퍼 표면에 인(P)을 확산시킴으로써 PN접합이 형성되고, 여기에 입사되는 태양빛의 반사손실을 줄이기 위하여 반사방지막을 코팅하고, 이렇게 구성된 웨이퍼의 전면 N층에 전면 전극을 형성하고, 후면 P층에 후면 전극을 형성함으로써 구성된다. In the silicon crystalline solar cell, a PN junction is formed by diffusing phosphorus (P) on the surface of a P-type silicon wafer, and an antireflection film is coated to reduce reflection loss of sunlight incident on the P-type silicon wafer. It is comprised by forming a front electrode and forming a back electrode in a back P layer.
보다 상세하게 설명하면, 실리콘 결정형 태양전지는 일반적으로 두께가 180 내지 220㎛인 P형 실리콘 기판을 사용한다. 상기 기판의 전면부에는 0.2 내지 0.6㎛ 두께의 n형 불순물층이 형성되고, 그 위에 반사 방지를 위한 SiNx층과 전면 전극이 형성된다. 후면부에는 전극이 형성되는데, 전극은 전기전도성 페이스트를 스크린 인쇄 등에 의해 도포하고 이를 건조한 후, 저온(약 600℃)과 고온(800-950℃)의 2단 소성과정을 거쳐 형성된다. In more detail, a silicon crystalline solar cell generally uses a P-type silicon substrate having a thickness of 180 to 220 µm. An n-type impurity layer having a thickness of 0.2 to 0.6 µm is formed on the front surface of the substrate, and a SiNx layer and a front electrode are formed thereon to prevent reflection. An electrode is formed on the rear side, and the electrode is formed by applying a conductive paste by screen printing or the like and drying it, followed by a two-stage baking process of low temperature (about 600 ° C.) and high temperature (800-950 ° C.).
이러한 소성과정에서 전기전도성 금속입자가 P형 실리콘 웨이퍼의 내부로 확산되면서 전기전도성 금속입자-Si 합금층이 형성된다. 이러한 확산층(P+층)에 의해, 태양전지에서 생성되는 전자의 재결합을 방지하고 생성된 캐리어(Carrier)의 수집 효율을 향상시키는 후면전계(BSF, Back Surface Field)가 형성된다. 이렇게 형성되는 후면전계층의 두께 및 균일도에 따라 태양전지의 효율이 좌우되는데 두께가 얇아지면 태양전지의 효율이 저하되고 두꺼워지면 효율이 상승된다.In the firing process, the electrically conductive metal particles diffuse into the P-type silicon wafer, thereby forming the electrically conductive metal particles-Si alloy layer. The diffusion layer (P + layer) forms a back surface field (BSF) that prevents recombination of electrons generated in the solar cell and improves the collection efficiency of the generated carriers. The efficiency of the solar cell depends on the thickness and uniformity of the backside field layer formed as described above. The thinner the thickness, the lower the efficiency of the solar cell and the higher the efficiency.
한편, 최근 태양전지의 비용절감을 도모하기 위하여 실리콘 웨이퍼의 기판을 얇게 하는 것이 추세인데, 실리콘 웨이퍼의 두께를 얇게 하면 실리콘 웨이퍼와 알루미늄의 팽창계수 차이로 인하여 웨이퍼의 휨이 발생하며, 그에 따라 웨이퍼 갈라짐 등의 현상도 발생된다.On the other hand, in recent years, in order to reduce the cost of solar cells, it is a trend to thin the substrate of the silicon wafer. When the thickness of the silicon wafer is thinned, the warpage of the wafer occurs due to the difference in the expansion coefficient between the silicon wafer and the aluminum, and thus the wafer Phenomena such as cracking also occur.
이러한 문제를 개선하기 위하여, 후면 전극인 알루미늄 전극의 두께를 얇게 형성할 필요가 있으며, 이는 알루미늄 페이스트의 도포량을 줄이는 방법으로 달성될 수 있다. 그러나, 알루미늄 페이스트의 도포량을 줄이게 되면 후면 전계층인 BSF층의 두께가 감소되어 태양전지의 효율이 저하될 뿐만 아니라, 소성공정 중에 전극층에 알루미늄 기포나 범프(bump)의 발생이 증가하는 문제가 야기된다. 이와 같이 발생된 알루미늄 기포나 돌출부위인 범프(bump)는 웨이퍼 후면의 평활도를 떨어뜨리며, 그들로 응력이 집중됨에 따라, 태양전지의 제조 공정이나 모듈제조 공정에서 전지의 깨짐을 야기한다. In order to improve this problem, it is necessary to form a thin thickness of the aluminum electrode, which is the rear electrode, which can be achieved by reducing the amount of the aluminum paste applied. However, if the coating amount of aluminum paste is reduced, the thickness of the BSF layer, which is the rear electric field layer, is reduced, which reduces the efficiency of the solar cell, and also causes the problem of the occurrence of aluminum bubbles or bumps in the electrode layer during the firing process. do. The aluminum bubbles or bumps generated as described above lower the smoothness of the back surface of the wafer, and as stress is concentrated thereon, the battery breaks in the solar cell manufacturing process or the module manufacturing process.
또한, 전도성 페이스트는 전기 전도도가 떨어지는 알루미늄의 전도성 향상을 위하여 순수한 은 입자를 페이스트에 첨가함으로써 배선 저항이 상승하고 후면전계 형성이 감소되어 태양전지의 효율이 저하된다.In addition, the conductive paste is added to the paste in order to improve the conductivity of aluminum having low electrical conductivity, the wiring resistance is increased and the backside field formation is reduced to decrease the efficiency of the solar cell.
이와 같은 문제를 해결하고자, 새로운 태양전지 후면 전극용 알루미늄 페이스트 조성물에 대한 개발이 절실하다.In order to solve this problem, the development of a new aluminum paste composition for solar cell back electrode is urgently needed.
본 발명의 목적은 태양전지의 휨이나 알루미늄 후면 전극 층에 대한 알루미늄 기포, 범프(bump)의 발생을 최소화하며, 알루미늄 전극의 후면전계 형성에 영향을 주지 않으면서도 전도성을 향상시켜 태양전지의 효율을 향상시키는 태양전지 후면 전극용 알루미늄 페이스트 조성물을 제공하는 것이다.An object of the present invention is to minimize the generation of aluminum bubbles, bumps to the bending of the solar cell or the aluminum back electrode layer, improve the conductivity without affecting the back field of the aluminum electrode to improve the efficiency of the solar cell It is to provide an aluminum paste composition for a solar cell back electrode to be improved.
본 발명은 평균입경(D50)이 1 ~ 5㎛인 알루미늄 분말; 평균입경(D50)이 20 ~ 100㎚이고 구형 또는 판상형인 전도성 은 분말; BiO2-SiO2-Al2O3-B2O3-SrO계 글라스 프릿; 및 유기 비히클을 포함한다.The present invention is an aluminum powder having an average particle diameter (D 50 ) of 1 to 5㎛; Conductive silver powder having an average particle diameter (D 50 ) of 20 to 100 nm and a spherical or plate shape; BiO 2 —SiO 2 —Al 2 O 3 —B 2 O 3 —SrO-based glass frit; And organic vehicles.
조성물 총 중량에 대하여, 상기 알루미늄 분말 64 ~ 75 중량%, 상기 전도성 은 분말 1 ~ 5 중량%, 상기 BiO2-SiO2-Al2O3-B2O3-SrO계 글라스 프릿 0.01 ~ 5 중량% 및, 상기 유기 비히클 20 ~ 34.9 중량%를 포함한다.64 to 75% by weight of the aluminum powder, 1 to 5% by weight of the conductive silver powder, and 0.01 to 5% by weight of the BiO 2 -SiO 2 -Al 2 O 3 -B 2 O 3 -SrO-based glass frit %, And 20 to 34.9% by weight of the organic vehicle.
상기 BiO2-SiO2-Al2O3-B2O3-SrO계 글라스 프릿의 조성비는 The composition ratio of the BiO 2 -SiO 2 -Al 2 O 3 -B 2 O 3 -SrO-based glass frit is
BiO2 20~30mol%, SiO2 25~35mol%, Al2O3 5~15mol%, B2O3 20~40mol% SrO 1~10mol%이다.20 to 30 mol% of BiO 2 , 25 to 35 mol% of SiO 2 , 5 to 15 mol% of Al 2 O 3 , and 20 to 40 mol% of B 2 O 3 to 1 to 10 mol% of SrO.
상기 BiO2-SiO2-Al2O3-B2O3-SrO계 글라스 프릿은 연화점이 400~600℃이다.The BiO 2 —SiO 2 —Al 2 O 3 —B 2 O 3 —SrO-based glass frit has a softening point of 400 to 600 ° C.
상기 유기 비히클은 상기 유기 비히클 총 중량에 대하여,The organic vehicle is based on the total weight of the organic vehicle,
고분자 수지 1 ~ 25 중량% 및 75 ~ 99 중량% 용매를 포함한다.1 to 25 weight percent polymer resin and 75 to 99 weight percent solvent.
상기 유기 비히클 총 중량에 대하여, 5 중량% 이하의 습윤제와 요변성제, 1 ~ 10 중량%의 첨가제를 더 포함한다.The total weight of the organic vehicle further includes 5 wt% or less of a wetting agent and thixotropic agent, and 1 to 10 wt% of an additive.
본 발명의 태양전지 후면 전극용 알루미늄 페이스트 조성물은 치밀한 알루미늄과 은 입자의 배열을 통해 전극 배선 저항을 감소시키고, 태양전지의 휨이나 알루미늄 후면 전극 층에 대한 알루미늄 기포, 범프(bump)의 발생을 최소화하며, Isc 및 Voc 값을 향상시킬 뿐만 아니라 전도성을 향상시켜 태양전지의 효율도 향상시키는 효과가 있다.The aluminum paste composition for solar cell back electrode of the present invention reduces electrode wiring resistance through the arrangement of dense aluminum and silver particles, and minimizes warpage of the solar cell or generation of aluminum bubbles and bumps on the aluminum back electrode layer. In addition, there is an effect of improving the efficiency of the solar cell by improving the conductivity as well as improving the Isc and Voc values.
이하, 본 발명에 대해 상세히 설명한다.Hereinafter, the present invention will be described in detail.
본 발명의 태양전지 후면 전극용 알루미늄 페이스트 조성물은 알루미늄 분말, 전도성 은 분말, 글라스 프릿, 유기 비히클을 포함한다.
The aluminum paste composition for solar cell back electrode of the present invention comprises aluminum powder, conductive silver powder, glass frit, organic vehicle.
본 발명의 태양전지 후면 전극용 알루미늄 페이스트 조성물에 포함되는 알루미늄 분말은 평균입경(D50)이 1 ~ 5㎛이다. 평균입경(D50)이 상술한 범위 미만이면 인쇄 후 소성공정에서 알루미늄 범프가 발생하고, 웨이퍼 휨이 커지는 문제가 있다. 반면, 상술한 범위를 초과하면 입자의 충진율이 떨어지고, 이로 인해 효율이 저하되는 문제가 발생된다.The aluminum powder included in the aluminum paste composition for solar cell back electrodes of the present invention has an average particle diameter (D 50 ) of 1 to 5 μm. If the average particle diameter (D 50 ) is less than the above-described range, aluminum bumps may occur in the post-printing firing step, and the warpage of the wafer may increase. On the other hand, if it exceeds the above-described range, the filling rate of the particles is lowered, thereby causing a problem that the efficiency is lowered.
알루미늄 분말은 조성물 총 중량에 대하여 64 ~ 75 중량%로 포함되는 것이 바람직하다. 상술한 범위 미만으로 포함되면 소성 후 인쇄된 알루미늄 층이 얇아져 후면 후면전계(BSF)층이 충분히 형성되지 않아 효율이 떨어지는 문제가 발생하고, 상술한 범위를 초과하면 인쇄두께가 너무 두꺼워지고 이로 인해 웨이퍼의 휨을 초래할 수 있다.
The aluminum powder is preferably included in an amount of 64 to 75% by weight based on the total weight of the composition. If the thickness is less than the above-mentioned range, the printed aluminum layer is thinned after firing, so that the back-side electric field (BSF) layer is not sufficiently formed, resulting in a problem of low efficiency. If the above-mentioned range is exceeded, the printing thickness becomes too thick and the wafer May cause warpage.
본 발명의 태양전지 후면 전극용 알루미늄 페이스트 조성물에 포함되는 전도성 은 분말은 평균입경(D50)이 20 ~ 100㎚이고 구형 또는 판상형이다. 평균입경(D50)이 상술한 범위 미만이면, 입자의 비표면적이 넓어져 본 발명의 페이스트 점도가 높아져서 인쇄성이 떨어진다. 이로 인해 은 입자의 함량을 높이는데 제한을 받게 된다. 반면 상술한 범위를 초과하면, 페이스트 내 은 입자의 치밀도가 떨어져 소성공정 후 배선 내 공극이 다량 발생하게 되어 배선의 저항이 상승하게 된다.The conductive silver powder included in the aluminum paste composition for solar cell back electrode of the present invention has an average particle diameter (D 50 ) of 20 to 100 nm and has a spherical or plate shape. When the average particle diameter (D 50) is less than the above-mentioned range, the specific surface area of the particle becomes high spreads the paste viscosity of the present invention is inferior printability. This limits the content of silver particles. On the other hand, if the above-mentioned range is exceeded, the density of silver particles in the paste decreases, and a large amount of voids in the wiring are generated after the firing process, thereby increasing the resistance of the wiring.
전도성 은 분말은 조성물 총 중량에 대하여 1 ~ 5 중량%로 포함되는 것이 바람직하다. 상술한 범위 미만으로 포함되면 알루미늄 전극의 전도성 향상을 기대할 수 없고, 상술한 범위를 초과하면 알루미늄의 확산에 의해 형성되는 후면전계층의 깊이가 감소함으로서 태양전지의 효율 저하를 초래할 수 있다.
The conductive silver powder is preferably included in 1 to 5% by weight based on the total weight of the composition. If it is included below the above range can not be expected to improve the conductivity of the aluminum electrode, if exceeding the above range can reduce the depth of the back-field layer formed by the diffusion of aluminum can cause a decrease in the efficiency of the solar cell.
본 발명의 태양전지 후면 전극용 알루미늄 페이스트 조성물에 포함되는 글라스 프릿은 BiO2-SiO2-Al2O3-B2O3-SrO계이다.Glass frit included in the aluminum paste composition for solar cell back electrode of the present invention is BiO 2 -SiO 2 -Al 2 O 3 -B 2 O 3 -SrO-based.
BiO2-SiO2-Al2O3-B2O3-SrO계 글라스 프릿은 0.01 ~ 5 중량%로, 바람직하게는 0.05 ~ 3 중량%, 더욱 바람직하게는 0.1 ~ 1 중량%로 포함된다. BiO2-SiO2-Al2O3-B2O3-SrO계 글라스 프릿은 0.01 중량% 미만으로 포함되면 웨이퍼의 휨이 증가하고 부착력이 떨어지는 문제가 발생하고, 5 중량%를 초과하면 저항이 높아져 태양전지의 효율이 떨어지는 문제가 발생된다.The BiO 2 -SiO 2 -Al 2 O 3 -B 2 O 3 -SrO-based glass frit is included in an amount of 0.01 to 5% by weight, preferably 0.05 to 3% by weight, and more preferably 0.1 to 1% by weight. If BiO 2 -SiO 2 -Al 2 O 3 -B 2 O 3 -SrO-based glass frit is included in less than 0.01% by weight, the warpage of the wafer increases and adhesion decreases. The problem arises that the efficiency of the solar cell is reduced.
상기 BiO2-SiO2-Al2O3-B2O3-SrO계 글라스 프릿의 조성비는 특별히 한정되는 것은 아니지만, BiO2 20~30mol%, SiO2 25~35mol%, Al2O3 5~15mol%, B2O3 20~40mol% SrO 1~10mol%를 포함하는 조성을 갖는 것이 바람직하다.The composition ratio of the BiO 2 -SiO 2 -Al 2 O 3 -B 2 O 3 -SrO-based glass frit is not particularly limited, but the BiO 2 20-30 mol%, SiO 2 25-35 mol%, Al 2 O 3 5 ~ It is preferred to have a composition comprising 15 mol%, B 2 O 3 20-40 mol% SrO 1-10 mol%.
또한, 본 발명에서 사용되는 글라스 프릿은 연화점이 400~600℃인 것이 바람직하다. 글라스 프릿의 연화점이 400℃ 미만인 경우에는 글라스 프릿의 열팽창계수가 상대적으로 커져 이로 인해 태양전지 제조 공정 중 소성공정을 거친 후 웨이퍼의 휨을 증가시키는 문제가 발생하며, 600℃를 초과하는 경우에는 소성과정에서 글라스 프릿이 용융되어 알루미늄 층과 실리콘 웨이퍼층 사이에서 밀착성을 부여해야 되는데 글라스 프릿이 충분히 용융되지 않아 밀착성이 저하되는 문제가 발생할 수 있다.Moreover, it is preferable that the softening point of the glass frit used by this invention is 400-600 degreeC. If the softening point of the glass frit is less than 400 ℃, the coefficient of thermal expansion of the glass frit is relatively large, which causes a problem of increasing the warpage of the wafer after the firing process during the solar cell manufacturing process. In this case, the glass frit is melted to provide adhesion between the aluminum layer and the silicon wafer layer. However, the glass frit may not be sufficiently melted, and thus the adhesion may be degraded.
본 발명의 태양전지 후면 전극용 은 페이스트 조성물에 포함되는 유기 비히클은 조성물 총 중량에 대하여 20 ~ 34.9 중량%로 포함되는 것이 바람직하다. The organic vehicle included in the silver paste composition for a solar cell back electrode of the present invention is preferably included in 20 to 34.9% by weight based on the total weight of the composition.
유기 비히클은 상수한 범위 미만으로 포함되면, 점도가 너무 높아져 인쇄성이 떨어지는 문제가 발생된다. 반면 상술한 범위를 초과하면, 도전성 은 분말의 함유량이 떨어져 충분한 은 배선 층의 두께를 확보하기 어려운 문제가 발생된다.If the organic vehicle is included in less than a constant range, the viscosity is too high, there is a problem of poor printability. On the other hand, when it exceeds the above-mentioned range, the content of electroconductive silver powder will fall and it will become difficult to ensure sufficient thickness of a silver wiring layer.
유기 비히클은 유기용매에 고분자 수지를 녹여서 제조하며, 필요에 따라, 요변성제, 습윤제, 첨가제 등을 더 포함할 수 있다.The organic vehicle is prepared by dissolving a polymer resin in an organic solvent and, if necessary, may further include a thixotropic agent, a humectant, an additive, and the like.
본 발명에 사용되는 유기 비히클은 유기 비히클 총 중량에 대하여, 75 ~ 99 중량%의 용매, 1 ~ 25 중량%의 고분자 수지를 포함한다. 상기 유기 비히클은 유기 비히클 총 중량에 대하여, 5 중량% 이하의 습윤제와 요변성제와 1 ~ 10 중량%의 첨가제를 더 포함할 수 있다.The organic vehicle used in the present invention comprises 75 to 99% by weight of solvent, 1 to 25% by weight of polymer resin, based on the total weight of the organic vehicle. The organic vehicle may further include 5 wt% or less of a wetting agent, a thixotropic agent, and 1 to 10 wt% of the additive, based on the total weight of the organic vehicle.
용매는 인쇄공정 중 페이스트의 건조를 막고 유동성을 조절할 수 있도록 150~300℃ 범위의 끊는점을 갖는 용매가 적합하다. 상기 용매는 유기 비히클의 총 중량이 100 중량%가 되도록 잔량 포함되는 것이 바람직하다.The solvent is a solvent having a breaking point in the range of 150 ~ 300 ℃ to prevent the drying of the paste during the printing process and to control the fluidity. The solvent is preferably included in the remaining amount so that the total weight of the organic vehicle is 100% by weight.
용매의 예로는 글리콜 에테르 계열로 트리프로필렌글리콜 메틸에테르, 디프로필렌글리콜 n-프로필에테르, 디프로필렌글리콜 n-부틸에테르, 트리프로필렌글리콜 n-부틸에테르, 프로필렌글리콜 페닐에테르, 디에틸렌글리콜 에틸에테르, 디에틸렌글리콜 n-부틸에테르, 디에틸렌글리콜 헥실에테르, 에틸렌글리콜 헥실에테르, 트리에틸렌글리콜 메틸에테르, 트리에틸렌글리콜 에틸에테르, 트리에틸렌글리콜 n-부틸에테르, 에틸렌글리콜 페닐에테르, 터피놀, Texanol®, 에틸렌글리콜 등을 들 수 있다.Examples of the solvent include glycol ether-based tripropylene glycol methyl ether, dipropylene glycol n-propyl ether, dipropylene glycol n-butyl ether, tripropylene glycol n-butyl ether, propylene glycol phenyl ether, diethylene glycol ethyl ether, di Ethylene glycol n-butyl ether, diethylene glycol hexyl ether, ethylene glycol hexyl ether, triethylene glycol methyl ether, triethylene glycol ethyl ether, triethylene glycol n-butyl ether, ethylene glycol phenyl ether, terpinol, Texanol ® , ethylene Glycol etc. are mentioned.
고분자 수지는 유기 비히클 총 중량에 대하여 1 내지 25 중량%로 포함되는 것이 바람직하고, 5 내지 25 중량%로 포함되는 것이 보다 바람직하다. 고분자 수지는 1 중량% 미만으로 포함되면, 본 발명의 조성물로 제조된 은 페이스트의 인쇄성 및 분산 안정성이 저하될 수 있다. 25 중량%를 초과하면, 페이스트가 인쇄되지 않을 수 있다.The polymer resin is preferably contained in an amount of 1 to 25% by weight, more preferably 5 to 25% by weight based on the total weight of the organic vehicle. When the polymer resin is included in less than 1% by weight, printability and dispersion stability of the silver paste prepared from the composition of the present invention may be lowered. If it exceeds 25% by weight, the paste may not be printed.
고분자 수지의 예로는 폴리비닐피롤리돈, 폴리비닐알코올, 폴리에틸렌글리콜, 에틸셀룰로오스, 로진, 페놀 수지, 아크릴 수지 등을 들 수 있다. Examples of the polymer resin include polyvinylpyrrolidone, polyvinyl alcohol, polyethylene glycol, ethyl cellulose, rosin, phenol resin, acrylic resin and the like.
요변성제와 습윤제는 이 분야에서 일반적으로 사용되는 것이라면, 특별히 한정하지 않는다.The thixotropic agent and the wetting agent are not particularly limited as long as they are generally used in this field.
첨가제는 유기 비히클 총 중량에 대하여, 1 ~ 10 중량%로 포함되는 것이 바람직하고, 1 ~ 5 중량%로 포함되는 것이 보다 바람직하다. The additive is preferably included in an amount of 1 to 10% by weight, and more preferably in an amount of 1 to 5% by weight based on the total weight of the organic vehicle.
첨가제로는 분산제 등 이 분야에서 일반적으로 사용되는 것을 들 수 있다. 분산제로는 시판되는 계면 활성제를 이용할 수 있고, 이들은 각각 단독으로 또는 2종 이상을 조합하여 사용할 수 있다. Additives include those generally used in this field, such as dispersants. A commercially available surfactant can be used as a dispersing agent, These can be used individually or in combination of 2 or more types, respectively.
계면 활성제의 예로는 비이온성 계면활성제로서 알킬 폴리옥시에틸렌에테르, 알킬아릴 폴리옥시에틸렌에테르, 폴리옥시에틸렌 폴리옥시프로필렌 공중합체와 같은 에테르형; 글리세린에스테르의 폴리옥시에틸렌에테르, 솔비탄 에스테르의 폴리옥시에틸렌에테르, 솔비톨 에스테르의 폴리옥시에틸렌에테르 같은 에스테르에테르형; 폴리에틸렌글리콜지방산에스테르, 글리세린에스테르, 솔비탄에스테르, 프로필렌글리콜에스테르, 슈가에스테르, 알킬폴리글루코시드 같은 에스테르형; 지방산알카놀아미드, 폴리옥시에틸렌지방산아미드, 폴리옥시에틸렌알킬아민, 아민 옥사이드 같은 함질소형이 있으며, 고분자계 계면활성제로서 폴리비닐알콜, 폴리비닐피롤리돈, 폴리아크릴산, 폴리아크릴산-말레인산 공중합체, 폴리 12-히드록시스테아린산 등을 들 수 있다.Examples of surfactants include ether type such as alkyl polyoxyethylene ether, alkylaryl polyoxyethylene ether, polyoxyethylene polyoxypropylene copolymer as nonionic surfactants; Ester ether types such as polyoxyethylene ether of glycerin ester, polyoxyethylene ether of sorbitan ester, and polyoxyethylene ether of sorbitol ester; Ester type such as polyethylene glycol fatty acid ester, glycerin ester, sorbitan ester, propylene glycol ester, sugar ester, alkyl polyglucoside; Nitrogen-containing types such as fatty acid alkanolamide, polyoxyethylene fatty acid amide, polyoxyethylene alkylamine, amine oxide, and the like, as the polymer surfactant, polyvinyl alcohol, polyvinylpyrrolidone, polyacrylic acid, polyacrylic acid-maleic acid copolymer, Poly 12-hydroxystearic acid and the like.
또한, 상기 계면활성제로 시판되는 상품으로는 하이퍼머(hypermer) KD(Uniqema 제조), AKM 0531(일본유지㈜ 제조), KP(신에쯔 가가꾸 고교㈜ 제조), 폴리플로우 (POLYFLOW)(교에이샤 가가꾸㈜ 제조), 에프톱(EFTOP)(토켐 프로덕츠사 제조), 아사히가드(Asahi guard), 서플론(Surflon)(이상, 아사히 글라스㈜ 제조), 솔스퍼스(SOLSPERSE)(제네까㈜ 제조), EFKA(EFKA 케미칼스사 제조), PB 821(아지노모또㈜ 제조), BYK-184, BYK-185, BYK-2160, Anti-Terra U(BYK사 제조) 등을 들 수 있다.
In addition, products commercially available as the surfactants include hypermer KD (manufactured by Uniqema), AKM 0531 (manufactured by Nippon Yuji Co., Ltd.), KP (manufactured by Shin-Etsu Chemical Co., Ltd.), polyflow (POLYFLOW) Esha Gagaku Co., Ltd., EFTOP (Tochem Products Co., Ltd.), Asahi guard, Suflon (above, Asahi Glass Co., Ltd.), SOLSPERSE (Genenka Co., Ltd.) Manufacture), EFKA (made by EFKA Chemicals Co., Ltd.), PB 821 (made by Ajinomoto Co., Ltd.), BYK-184, BYK-185, BYK-2160, Anti-Terra U (made by BYK company), etc. are mentioned.
또한, 본 발명은 상기 태양전지 후면 전극용 알루미늄 페이스트 조성물을 사용하여 후면 전극을 형성하는 공정을 포함한다. In addition, the present invention includes a step of forming a back electrode using the aluminum paste composition for solar cell back electrode.
상기 방법에 의하여 제조된 태양전지는 보다 치밀한 알루미늄과 은 입자의 배열을 통해 배선 저항이 감소되고, 도전성 은 분말의 혼용을 통해 알루미늄 전극의 후면전계(BSF) 형성에 영향을 주지 않으면서 전도성이 향상되므로 효율도 획기적으로 향상된다.
The solar cell manufactured by the above method reduces wiring resistance through a more dense arrangement of aluminum and silver particles, and improves conductivity without affecting backside field (BSF) formation of the aluminum electrode through the use of conductive silver powder. As a result, efficiency is dramatically improved.
이하에서, 실시예, 제조예, 시험예를 통하여 본 발명을 더욱 상세하게 설명한다. 그러나, 본 발명의 범위가 하기의 실시예, 제조예 및 시험예에 의하여 한정되는 것은 아니다.
Hereinafter, the present invention will be described in more detail with reference to Examples, Preparation Examples, and Test Examples. However, the scope of the present invention is not limited by the following examples, preparation examples and test examples.
실시예1 내지 실시예5, 비교예1 내지 비교예5: 태양전지 후면 전극용 알루미늄 페이스트 조성물 제조Examples 1 to 5, Comparative Examples 1 to 5: preparing aluminum paste composition for solar cell back electrode
알루미늄 분말, 은 분말, 글라스 프릿 및 글리콜 에테르에 에틸셀룰로오스를 녹여서 제조한 유기 비히클을 표 1에 기재된 조성대로 순차적으로 첨가한 후 자전 및 공전을 동시에 수행하는 믹서를 이용하여 1,000rpm에서 3분간 교반을 실시하여 태양전지 후면 전극용 알루미늄 페이스트 조성물을 제조하였다.An organic vehicle prepared by dissolving ethyl cellulose in aluminum powder, silver powder, glass frit, and glycol ether was sequentially added according to the composition shown in Table 1, followed by stirring at 1,000 rpm for 3 minutes using a mixer which simultaneously rotates and rotates. The aluminum paste composition for solar cell back electrode was produced.
한편, 글라스 프릿의 조성은 표 2에 기재되어 있고, 유기 비히클은 글리콜 에테르에 에틸셀룰로오스는 5 ~ 25 중량% 범위로 용해시켜 제조하였다.On the other hand, the composition of the glass frit is described in Table 2, the organic vehicle was prepared by dissolving ethyl cellulose in the glycol ether in the range of 5 to 25% by weight.
division
제조예: 태양전지의 제조Preparation Example: Fabrication of Solar Cell
크기가 156X156mm이고, 두께가 200㎛인 단결정 웨이퍼에 표면 텍스쳐링 공정을 수행하여 피라미드 높이가 약 4~6㎛가 되도록 형성시켰다. 그 후, 웨이퍼의 N-측 상에 SiNx를 코팅하였다. A surface texturing process was performed on a single crystal wafer having a size of 156 × 156 mm and a thickness of 200 μm to form a pyramid height of about 4 to 6 μm. Thereafter, SiNx was coated on the N-side of the wafer.
이어서, 웨이퍼의 후면에 실시예1 내지 실시예5, 비교예1 내지 비교예5의 태양전지 후면 전극용 알루미늄 페이스트 조성물을 이용하여 버스바(Bus Bar)를 인쇄 한 후 건조시켰다. Subsequently, a bus bar was printed on the back surface of the wafer using the aluminum paste composition for solar cell back electrodes of Examples 1 to 5 and Comparative Examples 1 to 5, followed by drying.
그 후, 동우화인켐㈜사 알루미늄 전극 페이스트(상품명: AMP-BL122C)를 스크린 인쇄판을 이용하여 도포하고 건조시키고, 전면 SiNx측 상에 은-페이스트를 이용하여 핑거 라인(Finger Line)을 인쇄하고 건조하였다. 상기 과정을 거친 실리콘 웨이퍼를 적외선 연속 소성로에서 소성영역의 온도가 720~900℃가 되도록 하여 소성하여 태양전지를 제조하였다. After that, Dongwoo Fine Chem's aluminum electrode paste (trade name: AMP-BL122C) was applied and dried using a screen printing plate, and a finger line was printed and dried on the front SiNx side using silver paste. It was. The silicon wafer passed through the above process was fired in an infrared continuous firing furnace such that the temperature of the firing region was 720 to 900 ° C. to manufacture a solar cell.
여기서, 소성공정은 실리콘 웨이퍼를 벨트 로(Belt Furnace) 내로 통과시키면서 전후면 동시 소성으로 수행될 수도 있다. 이때, 벨트 로(Belt Furnace)는 약 600℃의 번-아웃(Burn-out) 구간과 800~950℃ 부근의 파이어링(Firing) 구간을 포함하며, 페이스트 내 유기물을 태워 없앤 후, 전후면 은과 알루미늄을 용융시켜서 전극이 형성되게 한다.Here, the firing process may be performed by simultaneous firing of the front and rear surfaces while passing the silicon wafer into the belt furnace. At this time, the belt furnace includes a burn-out section of about 600 ° C. and a firing section around 800 ° C. to 950 ° C., after burning off the organic material in the paste, And aluminum are melted to form an electrode.
한편, 버스 바를 형성할 때 사용한 실시예1 내지 실시예5, 비교예1 내지 비교예5의 태양전지 후면 전극용 은 페이스트 조성물에 따라, 실시예1 내지 실시예5, 비교예1 내지 비교예5를 태양전지라 명명한다.
On the other hand, according to the silver paste composition for solar cell back electrode of Examples 1 to 5 and Comparative Examples 1 to 5 used to form the bus bar, Examples 1 to 5, Comparative Examples 1 to 5 Is called a solar cell.
시험예: 태양전지의 특성 평가Test Example: Evaluation of Characteristics of Solar Cell
상기 제조예에 의해 제조된 실시예1 내지 실시예5, 비교예1 내지 비교예5의 태양전지의 네모서리를 바닥과 일치시킨 후, 중앙부의 들뜸정도를 측정하여 태양전지의 휘어짐 정도를 평가하였다. 또한, 후면 알루미늄 전극 부위의 범프(bump), 알루미늄 기포의 발생은 육안으로 관찰하여 개수를 카운트 하였다.After the four corners of the solar cells of Examples 1 to 5 and Comparative Examples 1 to 5 manufactured by the above production example were matched with the bottom, the degree of lifting of the center part was measured to evaluate the degree of warpage of the solar cell. . In addition, the generation of bumps and aluminum bubbles in the rear aluminum electrode part was visually observed and the number was counted.
또한, 후면전계(BSF)는 태양전지의 절단면을 불산:질산:초산(1:3:6)의 약액으로 20초간 식각한 후 주사전자현미경(SEM)을 통하여 그 두께를 측정하였다. In addition, the back surface field (BSF) was etched with a chemical solution of hydrofluoric acid: nitric acid: acetic acid (1: 3: 6) for 20 seconds after measuring the thickness of the solar cell cut through a scanning electron microscope (SEM).
평가 결과는 하기 표 3에 나타내었다.The evaluation results are shown in Table 3 below.
입자크기silver
Particle size
분말함량silver
Powder content
발생bump
Occur
형성BSF
formation
bump 발생 정도(○:5개 이상 발생, △:5개 미만 발생, ×:발생하지 않음)Bump generation degree (○: 5 or more occurrences, △: less than 5 occurrences, ×: no occurrence)
BSF 형성 정도(○:7㎛이상 형성, △:4~6㎛ 형성, ×:4㎛ 미만 형성)Formation degree of BSF (○: 7 ㎛ or more formed, △: 4 ~ 6 ㎛ formed, ×: less than 4 ㎛ formed)
표 3에서 확인되는 바와 같이, 본 발명의 실시예1 내지 실시예 5의 태양전지가 휨, 범퍼, 후면전계의 평가항목에서 비교예1 내지 비교예5 보다 우수한 특성을 나타낸다.As confirmed in Table 3, the solar cell of Examples 1 to 5 of the present invention exhibits superior characteristics than Comparative Examples 1 to 5 in the evaluation items of the warpage, the bumper, and the rear electric field.
비교예1과 비교예2는 은 분말의 평균입경이 20 ~ 100㎚를 벗어나는 것에 기인하여 범퍼가 발생하였고, 비교예3은 은 분말이 사용되지 않은 것에 기인하여 범퍼가 발생하였으며, 비교예4와 비교예5는 은 분말의 설정범위 초과 첨가로 알루미늄 전극에 은의 함량이 과량 포함되어 후면전계 형성이 감소하였다.In Comparative Example 1 and Comparative Example 2, the bumper was generated due to the average particle diameter of the silver powder being out of 20 to 100 nm, and in Comparative Example 3, the bumper was generated due to the fact that the silver powder was not used. In Comparative Example 5, the addition of the silver powder exceeding the setting range contained excessive amount of silver in the aluminum electrode, thereby reducing the backside field formation.
은 분말의 평균입경이 20 ~ 100㎚를 벗어나면 내부 공극율이 커져 소성 공정 후 공극이 잔존하여 배선 저항이 커지게 되며, 알루미늄 전극에 은이 과량 포함되면 후면전계 형성이 감소하여 태양전지의 효율이 저하된다.
If the average particle diameter of silver powder is out of 20 ~ 100nm, the internal porosity increases, and the voids remain after the firing process, and the wiring resistance increases, and if the aluminum electrode contains excessive silver, the formation of the back field decreases and the efficiency of the solar cell decreases. do.
실시예1 내지 실시예5, 비교예1 내지 비교예5의 태양전지의 효율을 평가하였다. 태양전지의 효율은 핏테크(FitTech)사의 태양전지 성능 평가 장치인 SCM-1000을 이용하여 평가하고, 그 결과를 하기 표 4에 나타내었다.The efficiency of the solar cells of Examples 1 to 5 and Comparative Examples 1 to 5 was evaluated. The efficiency of the solar cell was evaluated using SCM-1000, a FitTech solar cell performance evaluation device, and the results are shown in Table 4 below.
※ Pmax(W) = 최대 전력※ Pmax (W) = maximum power
Eff(%) = 태양전지 효율Eff (%) = solar cell efficiency
FF(%) = Fill FactorFF (%) = Fill Factor
Isc(A) = 단락 전류Isc (A) = short circuit current
Voc(V) = 개방 전압Voc (V) = open voltage
Rs(ohm) = Series ResistanceRs (ohm) = Series Resistance
표 4에서 확인되는 바와 같이, 본 발명의 실시예1 내지 실시예 5의 태양전지가 태양전지 효율, 단락 전류, 개방 전압 등의 평가항목에서 비교예1 내지 비교예5에 비해 우수한 특성을 나타낸다.As confirmed in Table 4, the solar cells of Examples 1 to 5 of the present invention exhibit superior characteristics compared to Comparative Examples 1 to 5 in evaluation items such as solar cell efficiency, short circuit current, and open voltage.
비교예3의 경우, 휨, 후면전계, 단락 전류에서는 우수한 특성을 나타냈으나, 은 분말이 사용되지 않은 것에 기인하여 배선 저항 및 태양전지의 효율은 좋지 않았다.In Comparative Example 3, the warpage, the back side electric field, and the short-circuit current showed excellent characteristics, but the wiring resistance and the efficiency of the solar cell were not good because the silver powder was not used.
본 발명의 권리는 위에서 설명된 실시예에 한정되지 않고 청구범위에 기재된 바에 의해 정의되며, 본 발명의 기술분야에서 통상의 지식을 가진 자가 청구범위에 기재된 권리범위 내에서 다양한 변형과 개작을 할 수 있다는 것은 자명하다. It is to be understood that the invention is not limited to the disclosed embodiments, but is capable of many modifications and alterations, all of which are within the scope of the appended claims. It is self-evident.
Claims (6)
평균입경(D50)이 20 ~ 100㎚이고 구형 또는 판상형인 전도성 은 분말;
BiO2-SiO2-Al2O3-B2O3-SrO계 글라스 프릿; 및
유기 비히클을 포함하는 것을 특징으로 하는 태양전지 후면 전극용 알루미늄 페이스트 조성물.Aluminum powder having an average particle diameter (D 50 ) of 1 to 5 μm;
Conductive silver powder having an average particle diameter (D 50 ) of 20 to 100 nm and a spherical or plate shape;
BiO 2 —SiO 2 —Al 2 O 3 —B 2 O 3 —SrO-based glass frit; And
An aluminum paste composition for a solar cell back electrode, comprising an organic vehicle.
조성물 총 중량에 대하여,
상기 알루미늄 분말 64 ~ 75 중량%
상기 전도성 은 분말 1 ~ 5 중량%
상기 BiO2-SiO2-Al2O3-B2O3-SrO계 글라스 프릿 0.01 ~ 5 중량% 및
상기 유기 비히클 20 ~ 34.9 중량%를 포함하는 것을 특징으로 하는 태양전지 후면 전극용 알루미늄 페이스트 조성물.The method according to claim 1,
Regarding the total weight of the composition,
64 to 75% by weight of the aluminum powder
1 to 5 wt% of the conductive silver powder
0.01 to 5 wt% of the BiO 2 -SiO 2 -Al 2 O 3 -B 2 O 3 -SrO-based glass frit and
Aluminum paste composition for a solar cell back electrode, characterized in that it comprises 20 to 34.9% by weight of the organic vehicle.
상기 BiO2-SiO2-Al2O3-B2O3-SrO계 글라스 프릿의 조성비는
BiO2 20~30mol%, SiO2 25~35mol%, Al2O3 5~15mol%, B2O3 20~40mol% SrO 1~10mol%인 것을 특징으로 하는 태양전지 후면 전극용 알루미늄 페이스트 조성물.The method according to claim 1,
The composition ratio of the BiO 2 -SiO 2 -Al 2 O 3 -B 2 O 3 -SrO-based glass frit is
20 to 30 mol% of BiO 2 , 25 to 35 mol% of SiO 2 , 5 to 15 mol% of Al 2 O 3 , and 20 to 40 mol% of B 2 O 3 to SrO 1 to 10 mol%.
상기 BiO2-SiO2-Al2O3-B2O3-SrO계 글라스 프릿은 연화점이 400~600℃인 것을 특징으로 하는 태양전지 후면 전극용 알루미늄 페이스트 조성물.The method according to claim 3,
The BiO 2 -SiO 2 -Al 2 O 3 -B 2 O 3 -SrO-based glass frit has a softening point of 400 ~ 600 ℃ aluminum paste composition for solar cell back electrode.
상기 유기 비히클은
상기 유기 비히클 총 중량에 대하여,
고분자 수지 1 ~ 25 중량% 및 75 ~ 99 중량% 용매를 포함하는 것을 특징으로 하는 태양전지 후면 전극용 알루미늄 페이스트 조성물.The method according to claim 1,
The organic vehicle
With respect to the total weight of the organic vehicle,
An aluminum paste composition for a solar cell back electrode, comprising 1 to 25 wt% of a polymer resin and 75 to 99 wt% of a solvent.
상기 유기 비히클 총 중량에 대하여,
5 중량% 이하의 습윤제와 요변성제,
1 ~ 10 중량%의 첨가제를 더 포함하는 것을 특징으로 하는 태양전지 후면 전극용 알루미늄 페이스트 조성물.The method according to claim 5,
With respect to the total weight of the organic vehicle,
Up to 5% by weight of wetting agents and thixotropic agents,
Aluminum paste composition for solar cell back electrode further comprises 1 to 10% by weight of the additive.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103400635A (en) * | 2013-07-27 | 2013-11-20 | 乐凯胶片股份有限公司 | Aluminum paste for ultrathin silicon wafer solar battery |
| KR20160045716A (en) * | 2013-08-23 | 2016-04-27 | 도요 알루미늄 가부시키가이샤 | Paste composition and solar cell element |
| WO2016124005A1 (en) * | 2015-02-02 | 2016-08-11 | 南通天盛新能源科技有限公司 | Aluminum slurry used for crystalline silicon solar cell having aluminum back surface field and manufacturing method thereof |
-
2010
- 2010-06-30 KR KR1020100063047A patent/KR20120002257A/en not_active Application Discontinuation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103400635A (en) * | 2013-07-27 | 2013-11-20 | 乐凯胶片股份有限公司 | Aluminum paste for ultrathin silicon wafer solar battery |
| KR20160045716A (en) * | 2013-08-23 | 2016-04-27 | 도요 알루미늄 가부시키가이샤 | Paste composition and solar cell element |
| WO2016124005A1 (en) * | 2015-02-02 | 2016-08-11 | 南通天盛新能源科技有限公司 | Aluminum slurry used for crystalline silicon solar cell having aluminum back surface field and manufacturing method thereof |
| US10193005B2 (en) | 2015-02-02 | 2019-01-29 | Nantong T-Sun New Energy Co., Ltd. | All-aluminum back surface field aluminum paste for crystalline silicon solar cell and preparation method thereof |
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