KR20110137492A - Manufacturing method of an array substrate for liquid crystal display - Google Patents
Manufacturing method of an array substrate for liquid crystal display Download PDFInfo
- Publication number
- KR20110137492A KR20110137492A KR1020100057468A KR20100057468A KR20110137492A KR 20110137492 A KR20110137492 A KR 20110137492A KR 1020100057468 A KR1020100057468 A KR 1020100057468A KR 20100057468 A KR20100057468 A KR 20100057468A KR 20110137492 A KR20110137492 A KR 20110137492A
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- molybdenum
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- 239000000758 substrate Substances 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 119
- 239000002184 metal Substances 0.000 claims abstract description 119
- 238000005530 etching Methods 0.000 claims abstract description 81
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 261
- 239000010949 copper Substances 0.000 claims description 67
- 229910052802 copper Inorganic materials 0.000 claims description 57
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 55
- 239000000203 mixture Substances 0.000 claims description 55
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 46
- 229910003437 indium oxide Inorganic materials 0.000 claims description 43
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 43
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 32
- 229910052750 molybdenum Inorganic materials 0.000 claims description 28
- 239000011733 molybdenum Substances 0.000 claims description 27
- 239000010410 layer Substances 0.000 claims description 15
- -1 cyclic amine compound Chemical class 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 239000011737 fluorine Substances 0.000 claims description 11
- 229910052731 fluorine Inorganic materials 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 11
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 10
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 8
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 5
- 239000000908 ammonium hydroxide Substances 0.000 claims description 5
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical compound [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- KDCGOANMDULRCW-UHFFFAOYSA-N 7H-purine Chemical compound N1=CNC2=NC=NC2=C1 KDCGOANMDULRCW-UHFFFAOYSA-N 0.000 claims description 4
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 claims description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- BFXAWOHHDUIALU-UHFFFAOYSA-M sodium;hydron;difluoride Chemical compound F.[F-].[Na+] BFXAWOHHDUIALU-UHFFFAOYSA-M 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 2
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 229910017855 NH 4 F Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- PZOUSPYUWWUPPK-UHFFFAOYSA-N indole Natural products CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 claims description 2
- RKJUIXBNRJVNHR-UHFFFAOYSA-N indolenine Natural products C1=CC=C2CC=NC2=C1 RKJUIXBNRJVNHR-UHFFFAOYSA-N 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 1
- BCPFBVUTEDDWHC-UHFFFAOYSA-N [Cu].N1C=CCC1.N1C=CCC1 Chemical compound [Cu].N1C=CCC1.N1C=CCC1 BCPFBVUTEDDWHC-UHFFFAOYSA-N 0.000 claims 1
- GXVKHKJETWAWRR-UHFFFAOYSA-N a805143 Chemical compound C1CCNC1.C1CCNC1 GXVKHKJETWAWRR-UHFFFAOYSA-N 0.000 claims 1
- 125000004122 cyclic group Chemical group 0.000 claims 1
- 229910052700 potassium Inorganic materials 0.000 claims 1
- 239000011591 potassium Substances 0.000 claims 1
- 239000002131 composite material Substances 0.000 abstract 2
- 238000002955 isolation Methods 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 17
- ZPZCREMGFMRIRR-UHFFFAOYSA-N molybdenum titanium Chemical compound [Ti].[Mo] ZPZCREMGFMRIRR-UHFFFAOYSA-N 0.000 description 10
- 229910001069 Ti alloy Inorganic materials 0.000 description 9
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 7
- 229910001431 copper ion Inorganic materials 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 6
- 239000011247 coating layer Substances 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000013021 overheating Methods 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- RSWVSMKNPAJYTK-UHFFFAOYSA-N 2,3-dihydro-1h-pyrrole Chemical compound C1CC=CN1.C1CC=CN1 RSWVSMKNPAJYTK-UHFFFAOYSA-N 0.000 description 1
- IHCCLXNEEPMSIO-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 IHCCLXNEEPMSIO-UHFFFAOYSA-N 0.000 description 1
- DEXFNLNNUZKHNO-UHFFFAOYSA-N 6-[3-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-3-oxopropyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)C(CCC1=CC2=C(NC(O2)=O)C=C1)=O DEXFNLNNUZKHNO-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- GSWAOPJLTADLTN-UHFFFAOYSA-N oxidanimine Chemical compound [O-][NH3+] GSWAOPJLTADLTN-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- VBKNTGMWIPUCRF-UHFFFAOYSA-M potassium;fluoride;hydrofluoride Chemical compound F.[F-].[K+] VBKNTGMWIPUCRF-UHFFFAOYSA-M 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003352 sequestering agent Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Weting (AREA)
- Liquid Crystal (AREA)
Abstract
Description
본 발명은 액정표시장치용 어레이 기판의 제조방법; 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막 중에서 선택되는 1종 이상의 막을 포함하는 금속막의 식각액 조성물; 및 상기 식각액 조성물을 사용하는 금속막의 식각방법에 관한 것이다.The present invention provides a method of manufacturing an array substrate for a liquid crystal display device; An etchant composition of a metal film comprising at least one film selected from a copper metal film, a molybdenum metal film and an indium oxide film; And it relates to an etching method of a metal film using the etchant composition.
평판디스플레이의 화상 구현을 위해서는 TFT(Thin Film Transistor) 어레이에 투명 화소전극, 게이트전극, 소스전극 및 드레인 전극이 사용된다. 통상, 화소전극으로는 인듐을 주성분으로 하는 투명전도막 및 몰리브덴-티타늄 합금막이 사용되고 있다. 또한, 게이트 전극, 소스전극 및 드레인 전극으로는 Cr, Cu, Mo, Ti, Al 등을 주성분으로 단일막 또는 다중막이 사용되고 있으나, TFT-LCD의 대형화에 필수적으로 요구되는 RC 신호지연의 감소를 실현하기 위해서, 저저항 금속막으로서 구리막, 구리/몰리브덴막, 구리/몰리브덴-티타늄 합금막, 구리-질화물/몰리브덴-티타늄 합금막 등의 구리계 금속막이 많이 사용되고 있다.In order to realize an image of a flat panel display, a transparent pixel electrode, a gate electrode, a source electrode, and a drain electrode are used in a thin film transistor (TFT) array. In general, as the pixel electrode, a transparent conductive film mainly composed of indium and a molybdenum-titanium alloy film are used. In addition, a single film or a multi-layer is used as the gate electrode, the source electrode, and the drain electrode mainly composed of Cr, Cu, Mo, Ti, Al, etc., but the RC signal delay required for large-sized TFT-LCD is reduced. To this end, many copper-based metal films such as copper films, copper / molybdenum films, copper / molybdenum-titanium alloy films, and copper-nitride / molybdenum-titanium alloy films are used.
최근에는 생산공정을 단순화하여 생산량을 증가시키기 위하여 TFT-LCD에 사용되는 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막을 일괄식각할 수 있는 식각액에 대한 관심이 증대되고 있다. 그러나, 현재 이러한 목적으로 사용되고 있는 식각액 조성물들은 TFT-LCD에 사용되는 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막을 일괄식각하는 것은 가능하나, 각각의 막질에 대한 식각특성이 만족스럽지 못한 단점을 갖는다. 예컨대, 상기와 같은 막질의 일괄식각에서 구리/몰리브덴-티타늄 합금막 등의 식각 프로파일이 불량한 문제를 노출하고 있다. Recently, interest in etching liquids capable of collectively etching copper-based metal films, molybdenum-based metal films, and indium-based oxide films used in TFT-LCDs in order to simplify production processes and increase yields has increased. However, the etching liquid compositions currently used for this purpose can collectively etch the copper-based metal film, the molybdenum-based metal film, and the indium oxide film used in the TFT-LCD, but the etching characteristics of each film quality are not satisfactory. Has For example, in such a batch-etching of the film quality, a problem of poor etching profile of a copper / molybdenum-titanium alloy film or the like is exposed.
특히, 과산화수소계 식각액 조성물은 구리계 금속막에 대한 식각특성은 우수하나, 식각액 내로 용출되는 구리이온의 농도가 높아짐에 따라, 과산화수소의 연쇄분해 반응에 의한 과열이 발생하므로 공정상 위험이 상존하는 단점을 갖는다. In particular, the hydrogen peroxide-based etching solution composition has excellent etching characteristics for the copper-based metal film, but as the concentration of copper ions eluted into the etching solution increases, overheating occurs due to the chain decomposition reaction of hydrogen peroxide, thereby maintaining a process risk. Has
본 발명은, 과산화수소의 함량을 최소화하고 식각시 식각액 내에 존재하는 구리이온의 농도를 조절하는 것에 의해, 과산화수소의 연쇄분해 반응에 의한 과열로 인한 위험을 예방하면서도 다량의 과산화수소를 사용할 때와 동등 이상의 식각특성을 유지하는 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막 중에서 선택되는 1종 이상의 막을 포함하는 금속막, 즉 단일막 또는 다층막을 효과적으로 일괄식각 할 수 있는 식각액 조성물을 제공하는 것을 목적으로 한다.The present invention, by minimizing the content of hydrogen peroxide and by adjusting the concentration of copper ions present in the etchant during etching, while preventing the risk of overheating due to the chain decomposition reaction of hydrogen peroxide, the etching of equivalent or more than when using a large amount of hydrogen peroxide An object of the present invention is to provide an etching liquid composition capable of effectively collectively etching a metal film, that is, a single film or a multilayer film, including at least one film selected from a copper-based metal film, a molybdenum-based metal film, and an indium oxide film retaining properties. .
또한, 본 발명은 식각시 직선성이 우수한 테이퍼프로파일을 제공하고, 금속막의 잔사를 발생시키지 않는 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막 중에서 선택되는 1종 이상의 막을 포함하는 금속막을 효과적으로 일괄식각 할 수 있는 식각액 조성물을 제공하는 것을 목적으로 한다.In addition, the present invention provides a tapered profile excellent in linearity during etching, and effectively collectively a metal film including at least one film selected from a copper-based metal film, a molybdenum-based metal film, and an indium oxide film, which does not cause residue of the metal film. An object of the present invention is to provide an etchant composition that can be etched.
본 발명은, 조성물 총 중량에 대하여 A)수산암모늄(Ammonium Oxalate) 2 내지 10중량%, B)과산화수소(H2O2) 0.1 내지 10 중량%, C)함불소 화합물 0.01 내지 5중량%, D)수용성 시클릭아민 화합물 0.01 내지 5.0 중량% 및 E)잔량의 물을 포함하는 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막 중에서 선택되는 1종 이상의 막을 포함하는 금속막의 식각액 조성물을 제공한다.The present invention, A) 2 to 10% by weight of Ammonium Oxalate (A) 2 to 10% by weight, B) 0.1 to 10% by weight of hydrogen peroxide (H 2 O 2 ), C) 0.01 to 5% by weight of fluorine-containing compound, D (1) Provided is an etching liquid composition of a metal film comprising at least one film selected from a copper-based metal film, a molybdenum-based metal film, and an indium oxide film containing 0.01 to 5.0% by weight of a water-soluble cyclic amine compound and E).
또한, 본 발명은,In addition, the present invention,
(a)기판 상에 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막 중에서 선택되는 1종 이상의 막을 포함하는 금속막을 형성하는 단계;(a) forming a metal film on the substrate, the metal film including at least one film selected from a copper metal film, a molybdenum metal film and an indium oxide film;
(b)상기 (a)단계에서 형성된 금속막 상에 선택적으로 광반응 물질을 남기는 단계; 및(b) selectively leaving a photoreactive material on the metal film formed in step (a); And
(c)본 발명의 식각액 조성물을 사용하여 상기 (b)단계에서 처리된 금속막을 식각하는 단계를 포함하는 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막 중에서 선택되는 1종 이상의 막을 포함하는 금속막의 식각방법을 제공한다.(c) a metal comprising at least one film selected from a copper-based metal film, a molybdenum-based metal film, and an indium oxide film comprising etching the metal film treated in the step (b) using the etchant composition of the present invention; It provides a method of etching the film.
또한, 본 발명은In addition,
(a)기판 상에 게이트 전극을 형성하는 단계; (a) forming a gate electrode on the substrate;
(b)상기 게이트 전극을 포함한 기판 상에 게이트 절연층을 형성하는 단계; (b) forming a gate insulating layer on the substrate including the gate electrode;
(c)상기 게이트 절연층 상에 반도체층을 형성하는 단계; (d)상기 반도체층 상에 소스/드레인 전극을 형성하는 단계; 및 (c) forming a semiconductor layer on the gate insulating layer; (d) forming a source / drain electrode on the semiconductor layer; And
(e)상기 드레인 전극에 연결된 화소전극을 형성하는 단계를 포함하는 액정표시장치용 어레이 기판의 제조방법에 있어서, (e) A method of manufacturing an array substrate for a liquid crystal display device comprising forming a pixel electrode connected to the drain electrode.
상기 (a), (d) 및 (e)단계 중 하나 이상의 단계가 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막 중에서 선택되는 1종 이상의 막을 포함하는 금속막을 형성하고, 상기 금속막을 본 발명의 식각액 조성물로 식각하여 각각의 전극을 형성하는 단계를 포함하는 것을 특징으로 하는 액정표시장치용 어레이 기판의 제조방법을 제공한다.At least one of the steps (a), (d) and (e) forms a metal film including at least one film selected from a copper metal film, a molybdenum metal film, and an indium oxide film, and the metal film according to the present invention. It provides a method of manufacturing an array substrate for a liquid crystal display device comprising the step of forming each electrode by etching with an etchant composition of the.
또한, 본 발명은, 본 발명의 식각액 조성물을 사용하여 식각된 게이트 전극, 소스/드레인 전극, 및 화소전극 중 하나 이상을 포함하는 액정표시장치용 어레이 기판을 제공한다.In addition, the present invention provides an array substrate for a liquid crystal display device including at least one of a gate electrode, a source / drain electrode, and a pixel electrode etched using the etchant composition of the present invention.
본 발명의 식각액 조성물은 과산화수소의 함량을 최소화하고, 식각액 내에 존재하는 구리 이온의 농도를 제어함으로써, 과산화수소의 연쇄분해 반응에 의한 과열로 인한 위험을 예방하면서도, 다량의 과산화수소를 사용할 때와 동등 이상의 식각특성을 유지하므로, 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막 중에서 선택되는 1종 이상의 막을 포함하는 금속막의 식각 효율을 크게 향상시킨다.The etchant composition of the present invention minimizes the content of hydrogen peroxide and controls the concentration of copper ions present in the etchant, thereby preventing the risk of overheating due to the chain decomposition reaction of hydrogen peroxide, while etching the equivalent or more than when using a large amount of hydrogen peroxide. Since the properties are maintained, the etching efficiency of the metal film including at least one film selected from a copper metal film, a molybdenum metal film and an indium oxide film is greatly improved.
또한, 본 발명의 식각액 조성물은 구리계 금속막/몰리브덴계 금속막의 이중막을 식각할 때, 직선성이 우수한 테이퍼프로파일을 구현하며, 잔사를 발생시키지 않으므로 전기적인 쇼트나 배선의 불량, 휘도의 감소 등의 문제를 야기하지 않는다.In addition, the etching liquid composition of the present invention implements a taper profile excellent in linearity when etching the double layer of the copper-based metal film / molybdenum-based metal film, and does not generate residues, such as electrical shorts, poor wiring, reduced brightness, etc. Does not cause problems.
또한, 본 발명의 식각액 조성물은 액정표시장치용 어레이 기판의 화소전극으로 사용되는 인듐계 산화막도 효과적으로 식각할 수 있으므로, 게이트 전극과 게이트 배선, 소스/드레인 전극과 데이터 배선, 및 화소전극을 일괄식각하는 것을 가능하게 하여, 식각공정을 단순화시키며 공정수율을 극대화시킨다.In addition, the etching liquid composition of the present invention can also effectively etch the indium oxide film used as the pixel electrode of the array substrate for the liquid crystal display device, so that the gate electrode and the gate wiring, the source / drain electrode and the data wiring, and the pixel electrode are collectively etched. It makes it possible to simplify the etching process and maximize the process yield.
또한, 본 발명의 식각액 조성물은 상기와 같은 효과를 제공하며, 기판의 크기가 커도 식각균일성을 유지하므로 대화면, 고휘도의 회로가 구현되는 액정표시장치용 어레이 기판의 제조시에 매우 유용하게 사용될 수 있다.In addition, the etching solution composition of the present invention provides the above effects, and maintains the etching uniformity even when the size of the substrate is large, it can be very useful when manufacturing an array substrate for a liquid crystal display device with a large screen, high luminance circuit is implemented. have.
도1은 본 발명의 실시예1의 식각액 조성물로 식각한 구리/몰리브덴-티타늄 합금막의 표면에 대한 SEM 사진이다.
도2는 본 발명의 실시예1의 식각액 조성물로 식각한 인듐산화막(a-ITO)의 표면에 대한 SEM 사진이다.
도3은 본 발명의 비교예1의 식각액 조성물로 식각한 구리/몰리브덴-티타늄 합금막의 표면에 대한 SEM 사진이다.
도4는 본 발명의 비교예1의 식각액 조성물로 식각한 인듐산화막(a-ITO)의 표면에 대한 SEM 사진이다. 1 is a SEM photograph of the surface of a copper / molybdenum-titanium alloy film etched with the etchant composition of Example 1 of the present invention.
FIG. 2 is a SEM photograph of the surface of an indium oxide film (a-ITO) etched with the etchant composition of Example 1 of the present invention.
3 is a SEM photograph of the surface of a copper / molybdenum-titanium alloy film etched with the etchant composition of Comparative Example 1 of the present invention.
4 is a SEM photograph of the surface of an indium oxide film (a-ITO) etched with the etchant composition of Comparative Example 1 of the present invention.
본 발명은, 조성물 총 중량에 대하여 A)수산암모늄(Ammonium Oxalate) 2 내지 10중량%, B)과산화수소(H2O2) 0.1내지10 중량%, C)함불소 화합물 0.01 내지 5중량%, D)수용성 시클릭아민 화합물 0.01 내지 5.0 중량% 및 E)잔량의 물을 포함하는 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막 중에서 선택되는 1종 이상의 막을 포함하는 금속막의 식각액 조성물에 관한 것이다.
The present invention, A) 2 to 10% by weight of Ammonium Oxalate (A) 2 to 10% by weight, B) 0.1 to 10% by weight of hydrogen peroxide (H 2 O 2 ), C) 0.01 to 5% by weight of fluorine-containing compound, D A water-soluble cyclic amine compound relates to an etchant composition of a metal film comprising at least one film selected from a copper-based metal film, a molybdenum-based metal film, and an indium oxide film containing 0.01 to 5.0% by weight of a water-soluble cyclic amine compound.
본 발명의 식각액 조성물은 과산화수소의 함량을 최소화하고, 식각액 내에 존재하는 구리 이온의 농도를 제어함으로써, 과산화수소의 연쇄분해 반응에 의한 과열로 인한 위험을 최소화시키며, 다량의 과산화수소를 사용할 때와 동등 이상의 식각특성을 제공하는 특징을 갖는다. The etchant composition of the present invention minimizes the content of hydrogen peroxide, and controls the concentration of copper ions present in the etchant, thereby minimizing the risk of overheating due to the chain decomposition reaction of hydrogen peroxide, and etching equivalent or more than when using a large amount of hydrogen peroxide. Has characteristics that provide properties.
또한, 본 발명의 식각액 조성물은, 박막트랜지스터-액정표시소자(TFT-LCD)에 사용되는 구리계 금속막, 몰리브덴계 금속막, 인듐계 산화막 중에서 선택되는 1종 이상의 막을 포함하는 금속막, 즉 단일막 또는 다층막을 효율적으로 일괄식각할 수 있는 특징을 갖는다. 예컨대, 본 발명의 식각액 조성물은 구리막/몰리브덴-티타늄 합금막의 이중막, 몰리브덴-티타늄 합금막, 인듐계 산화막 등을 효율적으로 일괄식각할 수 있다.In addition, the etchant composition of the present invention is a metal film, that is, a single film comprising at least one film selected from a copper metal film, a molybdenum metal film, and an indium oxide film used in a thin film transistor-liquid crystal display device (TFT-LCD). The film or the multilayer film can be efficiently etched collectively. For example, the etchant composition of the present invention can efficiently collectively etch a double film of a copper film / molybdenum-titanium alloy film, a molybdenum-titanium alloy film, an indium oxide film, and the like.
특히, 본 발명의 식각액 조성물은, 종래에 인듐계 산화막 식각액으로 사용되고 있는 옥살산 계열의 식각액에 비해 식각 속도가 빠르며 잔사도 발생시키지 않으며, 0℃ 이하에서의 옥살산의 결정화도 염려할 필요가 없다. 또한, 염산 계열의 식각액에서 나타나는 하부 금속막에 대한 영향도 없으므로, TFT-LCD의 제조공정에서 유용하게 사용될 수 있다.
In particular, the etchant composition of the present invention is faster than the oxalic acid-based etchant that is conventionally used as an indium oxide film etchant, does not cause residue, and there is no need to worry about crystallization of oxalic acid at 0 ° C or lower. In addition, since there is no influence on the lower metal film appearing in the hydrochloric acid-based etching solution, it can be usefully used in the manufacturing process of the TFT-LCD.
본 발명의 식각액 조성물에서, In the etchant composition of the present invention,
구리계 금속막은 구리를 주성분으로 하는 금속막으로서, 순수 구리막 및, 구리 산화막, 구리 질화막 등을 포함하는 구리 합금막을 포함한다. The copper-based metal film is a metal film containing copper as a main component, and includes a pure copper film and a copper alloy film including a copper oxide film, a copper nitride film, and the like.
몰리브덴계 금속막은 몰리브데늄을 주성분으로 하는 금속막으로서, 순수 몰리브데늄막 및 몰리브데늄 합금막을 포함하며, 상기 몰리브데늄 합금막은 예컨대, 티타늄(Ti), 탄탈륨(Ta), 크롬(Cr), 니켈(Ni), 네오디늄(Nd), 및 인듐(In) 등으로 이루어진 군으로부터 선택되는 1종 이상의 금속과 몰리브데늄의 합금막을 의미한다. The molybdenum-based metal film is a metal film containing molybdenum as a main component, and includes a pure molybdenum film and a molybdenum alloy film. The molybdenum alloy film includes, for example, titanium (Ti), tantalum (Ta), and chromium (Cr). ), An alloy film of molybdenum and at least one metal selected from the group consisting of nickel (Ni), neodymium (Nd), indium (In), and the like.
인듐계 산화막은 인듐을 주성분으로 하는 금속막으로서, 인듐아연산화막(IZO), 인듐주석산화막(ITO) 등을 포함한다.An indium oxide film is a metal film containing indium as a main component and includes an indium zinc oxide film (IZO), an indium tin oxide film (ITO), and the like.
본 발명에서 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막 중에서 선택되는 1종 이상의 막을 포함하는 금속막은 그러한 금속막을 포함하는 단일막 또는 다층막을 포함한다. 상기 단일막의 대표적인 예로는 인듐계 산화막, 몰리브덴-티타늄 합금막 등을 들 수 있으며, 다층막의 대표적인 예로는 구리계 금속막/몰리브덴계 금속막의 이중막을 들 수 있으며, 더 구체적으로 구리막/몰리브덴-티타늄 합금막의 2중막 등을 들 수 있다.
In the present invention, the metal film including at least one film selected from a copper metal film, a molybdenum metal film, and an indium oxide film includes a single film or a multilayer film including such a metal film. Representative examples of the single layer may include an indium oxide film, a molybdenum-titanium alloy film, and the like, and a representative example of the multilayer film may include a double layer of a copper-based metal film / molybdenum-based metal film, and more specifically, a copper film / molybdenum-titanium film. The double film of an alloy film, etc. are mentioned.
본 발명의 식각액 조성물에 포함되는 A)수산암모늄(Ammonium Oxalate)은 구리이온과 배위결합을 통하여 착물을 형성함으로써 식각액 내에 존재하는 구리이온의 농도를 조절하는 역할을 수행한다. A) ammonium oxide (Ammonium Oxalate) included in the etchant composition of the present invention serves to control the concentration of copper ions present in the etchant by forming a complex through the coordination bond with the copper ions.
상기 수산화암모늄은 조성물 총 중량에 대하여 2 내지 10 중량%로 포함되는 것이 바람직하며, 3 내지 8중량%로 포함되는 것이 더욱 바람직하다. 수산화암모늄이 2중량% 미만으로 포함되면 식각액 내에 존재하는 구리이온의 농도를 조절하기 어렵고, 식각 균일성도 저하되며, 10 중량%를 초과하면 수산암모늄이 석출되는 문제가 발생된다. The ammonium hydroxide is preferably included in 2 to 10% by weight, more preferably in 3 to 8% by weight based on the total weight of the composition. If the amount of ammonium hydroxide is less than 2% by weight, it is difficult to control the concentration of copper ions present in the etchant, the etching uniformity is also lowered, and when it exceeds 10% by weight, the problem of precipitation of ammonium hydroxide occurs.
본 발명의 식각액 조성물에 포함되는 B)과산화수소(H2O2)는 구리계 금속막을 식각하는 주성분이다. B) hydrogen peroxide (H 2 O 2 ) included in the etchant composition of the present invention is a main component for etching the copper-based metal film.
상기 과산화수소는 조성물 총 중량에 대하여 0.1 내지 10중량%로 포함되는 것이 바람직하며, 0.5 내지 5중량%로 포함되는 것이 더욱 바람직하다. 과산화수소가 0.1중량% 미만으로 포함되면, 구리계 금속막이 식각되지 않거나 식각속도가 아주 느려지며, 10중량%를 초과하면 식각속도가 전체적으로 빨라지기 때문에 공정 컨트롤이 어려우며, 과산화수소의 연쇄분해 반응에 의한 과열로 인한 위험이 발생될 수 있다.The hydrogen peroxide is preferably included in 0.1 to 10% by weight, more preferably 0.5 to 5% by weight relative to the total weight of the composition. When the hydrogen peroxide is included in less than 0.1% by weight, the copper-based metal film is not etched or the etching rate is very slow, when the hydrogen peroxide is more than 10% by weight, the process is difficult to control the process, because the overheating by the chain decomposition reaction of hydrogen peroxide Risks may arise.
본 발명의 식각액 조성물에 포함되는 C)함불소 화합물은 구리막, 몰리브덴막 및 인듐산화막을 동시에 식각하는 용액에서 필연적으로 발생하는 잔사를 제거하여 주는 역할을 한다. 상기 C)함불소 화합물의 함량은 조성물 총중량에 대하여 0.01 내지 5 중량%가 바람직하며, 더욱 바람직하게는 0.05 내지 2.0중량%로 포함된다. 상기 C)함불소 화합물의 함량이 0.01중량% 미만인 경우, 식각 잔사가 발생될 수 있으며, 5중량%를 초과하는 경우에는 유리 기판 및 절연막 식각율이 크게 발생 되는 문제가 있다.The C) fluorine-containing compound included in the etchant composition of the present invention serves to remove residues inevitably generated from a solution which simultaneously etches a copper film, molybdenum film, and indium oxide film. The content of the C) fluorine-containing compound is preferably 0.01 to 5% by weight, more preferably 0.05 to 2.0% by weight based on the total weight of the composition. When the content of the C) fluorine-containing compound is less than 0.01% by weight, an etching residue may be generated, and when the content of the fluorine-containing compound is greater than 5% by weight, the etching rate of the glass substrate and the insulating film is greatly generated.
상기 C)함불소 화합물은, 이 분야에서 통상적으로 사용되는 물질로서 용액 내에서 플루오르 이온 혹은 다원자 플루오르 이온으로 해리될 수 있는 것이라면 특별히 제한되지 않는다. 예컨대, 불화암모늄(ammonium fluoride: NH4F), 불화나트륨(sodium fluoride: NaF), 불화칼륨(potassium fluoride: KF), 중불화암모늄(ammonium bifluoride: NH4FHF), 중불화나트륨(sodium bifluoride: NaFHF), 중불화칼륨(potassium bifluoride: KFHF) 등을 들 수 있으며, 이들은 1종 단독으로 또는 2종 이상이 함께 사용될 수 있다.The C) fluorine-containing compound is not particularly limited as long as it can be dissociated into fluorine ions or polyatomic fluoride ions in solution as a material commonly used in the art. For example, ammonium fluoride (NH 4 F), sodium fluoride (NaF), potassium fluoride (KF), ammonium bifluoride (NH 4 FHF), sodium bifluoride (sodium bifluoride: NaFHF), potassium bifluoride (KFHF), and the like, and these may be used alone or in combination of two or more thereof.
본 발명의 식각액 조성물에 포함되는 D)수용성 시클릭아민 화합물은 구리계 금속의 식각 속도를 조절하며 패턴의 시디로스(CD Loss)를 줄여주어 공정상의 마진을 높이는 역할을 한다. 상기 수용성 시클릭아민 화합물은 조성물 총 중량에 대하여 0.01 내지 5중량%로 포함되는 것이 바람직하며, 더욱 바람직하게는 0.1 내지 3중량%로 포함된다. 수용성 시클릭 아민 화합물이 0.01 중량% 미만으로 포함되는 경우, 시디로스가 너무 크게 발생될 수 있으며, 5중량%를 초과하는 경우, 구리의 식각속도는 빨라지고 몰리브덴 또는 몰리브덴합금의 식각 속도는 느려지기 때문에 씨디로스가 커지고 몰리브덴 또는 몰리브덴합금의 잔사가 남을 가능성이 증가한다.D) water-soluble cyclic amine compound included in the etchant composition of the present invention controls the etching rate of the copper-based metal and serves to increase the process margin by reducing the CD loss of the pattern. The water-soluble cyclic amine compound is preferably included in 0.01 to 5% by weight, more preferably 0.1 to 3% by weight based on the total weight of the composition. When the water-soluble cyclic amine compound is included in less than 0.01% by weight, the cisidose may be generated too large, and when it exceeds 5% by weight, the etching speed of copper is faster and the etching rate of molybdenum or molybdenum alloy is lowered. The increase in CD-ROS and the possibility that the residues of molybdenum or molybdenum alloy remain.
상기 D)수용성 시클릭아민 화합물로는 아미노테트라졸(aminotetrazole), 이미다졸(imidazole), 인돌(indole), 푸린(purine), 피라졸(pyrazole), 피리딘(pyridine), 피리미딘(pyrimidine), 피롤(pyrrole), 피롤리딘(pyrrolidine), 피롤린(pyrroline) 등을 들 수 있으며, 이들은 1종 단독으로 또는 2종 이상이 함께 사용될 수 있다.
The D) water-soluble cyclic amine compound is aminotetrazole, imidazole, indole, purine, pyrazole, pyridine, pyrimidine, Pyrrole (pyrrole), pyrrolidine (pyrrolidine), pyrroline (pyrroline) and the like, these may be used alone or in combination of two or more.
본 발명의 식각액 조성물에 포함되는 E)물은 특별히 한정되는 것은 아니나, 탈이온수가 바람직하다. 더욱 바람직하게는 물의 비저항 값(즉, 물속에 이온이 제거된 정도)이 18㏁/㎝ 이상인 탈이온수를 사용하는 것이 바람직하다.E) water contained in the etching liquid composition of this invention is not specifically limited, Deionized water is preferable. More preferably, deionized water having a specific resistance value of the water (that is, the degree to which ions are removed in the water) is 18 kW / cm or more is used.
본 발명의 식각액 조성물은 전술한 성분 이외에 통상의 첨가제를 더 첨가할 수 있으며, 첨가제의 대표적인 예로는 금속 이온 봉쇄제, 부식 방지제 등을 들 수 있다. The etching liquid composition of the present invention may further add a conventional additive in addition to the above-described components, and representative examples of the additive include metal ion sequestrants, corrosion inhibitors, and the like.
본 발명의 식각액 조성물에 사용되는 A)수산암모늄(Ammonium Oxalate), B)과산화수소(H2O2), C)함불소 화합물, D)수용성 시클릭아민 화합물 및 E)잔량의 물은 반도체 공정용의 순도를 가지는 것이 바람직하다.A) ammonium oxalate, B) hydrogen peroxide (H 2 O 2 ), C) fluorine-containing compound, D) water-soluble cyclic amine compound, and E) residual water used in the etchant composition of the present invention It is desirable to have a purity of.
본 발명의 식각액 조성물은 구리계 금속막으로 이루어진 액정표시장치의 게이트 전극과 게이트 배선, 소스/드레인 전극과 데이터 배선, 및 화소전극을 일괄 식각할 수 있다.
The etchant composition of the present invention may collectively etch the gate electrode, the gate wiring, the source / drain electrode, the data wiring, and the pixel electrode of the liquid crystal display device made of a copper-based metal film.
또한, 본 발명은,In addition, the present invention,
(a)기판 상에 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막 중에서 선택되는 1종 이상의 막을 포함하는 금속막을 형성하는 단계;(a) forming a metal film on the substrate, the metal film including at least one film selected from a copper metal film, a molybdenum metal film and an indium oxide film;
(b)상기 (a)단계에서 형성된 금속막 상에 선택적으로 광반응 물질을 남기는 단계; 및(b) selectively leaving a photoreactive material on the metal film formed in step (a); And
(c)본 발명의 식각액 조성물을 사용하여 상기 (b)단계에서 처리된 금속막을 식각하는 단계를 포함하는 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막 중에서 선택되는 1종 이상의 막을 포함하는 금속막의 식각방법에 관한 것이다.(c) a metal comprising at least one film selected from a copper-based metal film, a molybdenum-based metal film, and an indium oxide film comprising etching the metal film treated in the step (b) using the etchant composition of the present invention; A method of etching a film.
상기 (a)단계는, (a1)기판을 제조하는 단계 및 (a2)상기 기판 상에 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막 중에서 선택되는 1종 이상의 막을 포함하는 금속막을 형성하는 단계를 포함할 수 있다. 물론 기판 상에 통상적인 세정공정을 수행하고, 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막 중에서 선택되는 1종 이상의 막을 포함하는 금속막을 증착할 수도 있다. The step (a) comprises the steps of: (a1) manufacturing a substrate and (a2) forming a metal film including at least one film selected from a copper metal film, a molybdenum metal film, and an indium oxide film on the substrate. It may include. Of course, a conventional cleaning process may be performed on the substrate, and a metal film including at least one film selected from a copper metal film, a molybdenum metal film, and an indium oxide film may be deposited.
상기 (a1)단계에서 기판은 유리기판 또는 석영기판일 수 있으며, 유리기판이 바람직하다. In the step (a1), the substrate may be a glass substrate or a quartz substrate, and a glass substrate is preferable.
상기 (a2)단계에서 기판 상에 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막 중에서 선택되는 1종 이상의 막을 포함하는 금속막을 형성하는 방법으로는 이 분야에서 공지된 다양한 방법을 사용할 수 있으며, 구체적인 예로는 스퍼터링법에 의해 금속막을 기판 상에 증착하는 방법을 들 수 있다. 막의 두께는 대략 200~500Å이 되도록 증착시킬 수 있다.As a method of forming a metal film including at least one film selected from a copper metal film, a molybdenum metal film, and an indium oxide film on the substrate in step (a2), various methods known in the art may be used. As a specific example, the method of depositing a metal film on a board | substrate by sputtering method is mentioned. The thickness of the film can be deposited to be approximately 200 to 500 kPa.
상기 (a)단계는 상기 기판과 상기 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막 중에서 선택되는 1종 이상의 막을 포함하는 금속막 사이에 액정표시장치용 구조물을 형성하는 단계를 더 포함할 수도 있다.The step (a) may further include forming a structure for a liquid crystal display device between the substrate and a metal film including at least one film selected from the copper-based metal film, the molybdenum-based metal film, and the indium oxide film. have.
상기에서 액정표시장치용 구조물은 화학기상증착 등의 방법에 의한 유기 절연막, 스퍼터링 등의 방법에 의한 도전성 물질, 및 비정질 또는 다결정성의 실리콘막과 같은 반도체막 등을 의미하며, 포토공정, 식각공정 등으로 제조한 구조물일 수도 있다.The structure for a liquid crystal display device refers to an organic insulating film by a method such as chemical vapor deposition, a conductive material by a method such as sputtering, a semiconductor film such as an amorphous or polycrystalline silicon film, and the like, a photo process, an etching process, and the like. It may be a structure manufactured by.
상기 (b)단계는, (b1)(a)단계에서 형성된 금속막상에 광반응물질을 도포하여 광반응물질 코팅층을 형성하는 단계; (b2)포토마스크를 통해 상기 광반응물질 코팅층을 선택적으로 노광하는 단계; 및 (b3)상기 광반응물질 코팅층의 전체영역 중 일정 영역이 (a)단계에서 형성된 금속막 상에 남도록, 현상액을 이용하여 상기 광반응물질 코팅층을 현상하는 단계를 포함할 수 있다.Step (b) may include forming a photoreactive material coating layer by coating a photoreactive material on the metal film formed in step (b1) (a); (b2) selectively exposing the photoreactive material coating layer through a photomask; And (b3) developing the photoreactive material coating layer by using a developer such that a predetermined region of the entire area of the photoreactive material coating layer remains on the metal film formed in step (a).
상기 (b1)단계에서는, 스핀코터(spin coater)를 이용하여 (a)단계에서 형성된 금속막에 광반응물질을 도포할 수 있으며, 그 두께는 1㎛ 내외인 것이 바람직하다. 여기서, 스핀코터 이외에도 슬릿코터를 이용할 수도 있으며, 또한 스핀코터와 슬릿코터를 혼용하여 사용할 수도 있다. 상기 도포공정은 에싱(ashing), 열처리 등 통상적으로 진행되는 과정를 더 포함할 수 있다.In the step (b1), the photoreactive material may be applied to the metal film formed in the step (a) using a spin coater, the thickness is preferably about 1㎛. Here, the slit coater may be used in addition to the spin coater, and the spin coater and the slit coater may be used in combination. The coating process may further include a process that is typically carried out such as ashing, heat treatment.
상기 (b1)단계에서는 광반응물질로 포토레지스트를 사용할 수 있다. 포토레지스트는 특정 파장대의 빛을 받으면(노광:photo exposure) 반응하는 일종의 감광성 고분자 화합물(photosensitive polymer)로서, 이때 반응이라 함은 포토레지스트의 일정 부분이 노광 되었을 때 노광된 부분의 폴리머(polymer) 사슬이 끊어지거나 혹은 더 강하게 결합하는 것을 의미한다. 따라서, 노광된 부분의 폴리머(polymer) 결합사슬이 끊어지는 양극형(positive) 포토레지스트와 그 반대의 음극형(negative) 포토레지스트 중에서 선택하여 사용할 수 있다.In step (b1), a photoresist may be used as the photoreactive material. A photoresist is a kind of photosensitive polymer that reacts when it receives light at a specific wavelength range (photo exposure), where the reaction is the polymer chain of the exposed part when a part of the photoresist is exposed. This means breaking or bonding stronger. Therefore, it is possible to select and use between a positive photoresist in which the polymer bond chain of the exposed portion is broken and a negative photoresist on the contrary.
상기 (b2)단계에서는 포토마스크(photo mask)를 사용하여 광반응물질 코팅층에 선택적으로 자외선 영역의 빛을 조사한다.In step (b2), a photomask is used to selectively irradiate light in the ultraviolet region to the photoreactive material coating layer.
상기 (b3)단계에서는 노광공정(b2)을 통해 상대적으로 결합이 약해져 있는 부분의 광반응물질 코팅층을 현상액을 사용하여 녹여낸다. 따라서 기판에 형성된 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막 중에서 선택되는 1종 이상의 막을 포함하는 금속막 상에 선택적으로 광반응 물질을 남길 수 있게 된다.In the step (b3), the photoreactive material coating layer of the portion where the bonding is relatively weak through the exposure process (b2) is melted using a developer. Therefore, it is possible to selectively leave a photoreactive material on the metal film including at least one film selected from the copper-based metal film, molybdenum-based metal film and indium oxide film formed on the substrate.
상기(c)단계에서의 식각공정은 이 분야에서 공지된 방법에 따라 수행될 수 있으며, 침지시키는 방법, 분사(spray)하는 방법 등을 예로 들 수 있다. 식각 공정시 식각용액의 온도는 30~50℃일 수 있으며, 적정 온도는 다른 공정과 기타 요인을 고려하여 필요에 따라 변경할 수 있다.
The etching process in the step (c) may be performed according to a method known in the art, and examples thereof include a method of immersion, a method of spraying, and the like. The temperature of the etching solution during the etching process may be 30 ~ 50 ℃, the appropriate temperature can be changed as necessary in consideration of other processes and other factors.
또한, 본 발명은In addition,
(a)기판 상에 게이트 전극을 형성하는 단계; (a) forming a gate electrode on the substrate;
(b)상기 게이트 전극을 포함한 기판 상에 게이트 절연층을 형성하는 단계; (b) forming a gate insulating layer on the substrate including the gate electrode;
(c)상기 게이트 절연층 상에 반도체층을 형성하는 단계; (c) forming a semiconductor layer on the gate insulating layer;
(d)상기 반도체층 상에 소스/드레인 전극을 형성하는 단계; 및(d) forming a source / drain electrode on the semiconductor layer; And
(e)상기 드레인 전극에 연결된 화소전극을 형성하는 단계를 포함하는 액정표시장치용 어레이 기판의 제조방법에 있어서, (e) A method of manufacturing an array substrate for a liquid crystal display device comprising forming a pixel electrode connected to the drain electrode.
상기 (a), (d) 및 (e)단계 중 하나 이상의 단계가 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막 중에서 선택되는 1종 이상의 막을 포함하는 금속막을 형성하고, 상기 금속막을 본 발명의 식각액 조성물로 식각하여 각각의 전극을 형성하는 단계를 포함하는 것을 특징으로 하는 액정표시장치용 어레이 기판의 제조방법에 관한 것이다.At least one of the steps (a), (d) and (e) forms a metal film including at least one film selected from a copper metal film, a molybdenum metal film, and an indium oxide film, and the metal film according to the present invention. It relates to a method of manufacturing an array substrate for a liquid crystal display device comprising the step of forming a respective electrode by etching with an etchant composition of the.
상기 액정표시장치용 어레이 기판은 박막트랜지스터(TFT) 어레이 기판일 수 있다.
The array substrate for a liquid crystal display device may be a thin film transistor (TFT) array substrate.
이하에서, 실시예를 통하여 본 발명을 보다 상세히 설명한다. 그러나, 하기의 실시예는 본 발명을 더욱 구체적으로 설명하기 위한 것으로서, 본 발명의 범위가 하기의 실시예에 의하여 한정되는 것은 아니다. 하기의 실시예는 본 발명의 범위 내에서 당업자에 의해 적절히 수정, 변경될 수 있다. Hereinafter, the present invention will be described in more detail with reference to Examples. However, the following examples are intended to illustrate the present invention more specifically, but the scope of the present invention is not limited by the following examples. The following examples can be appropriately modified and changed by those skilled in the art within the scope of the present invention.
실시예1 및 비교예1 ~ 2: 식각액 조성물의 제조 및 식각특성의 평가Example 1 and Comparative Examples 1 to 2: Preparation of the etchant composition and evaluation of the etching characteristics
(1) 식각액 조성물의 제조(1) Preparation of etching liquid composition
하기 표1에 나타낸 조성에 따라, 각 성분들을 혼합하여 실시예1 및 비교예1 및 2의 식각액 조성물을 각각 6 kg씩 제조하였다.According to the composition shown in Table 1, each component was mixed to prepare the etching solution composition of Example 1 and Comparative Examples 1 and 2 by 6 kg each.
(단위:중량%)
(Unit: weight%)
(2) 식각특성평가(2) Etch Characteristic Evaluation
상기에서 제조된 실시예1, 비교예1 및 비교예2의 식각액 조성물을 사용하여 스퍼터링법으로 유리 기판 상에 증착한 Cu/Mo-Ti 금속막을 식각하였다. 분사식 식각 방식의 실험장비(모델명: ETCHER(TFT), SEMES사) 내에 제조된 식각액을 넣고 온도를 32℃로 설정하여 가온한 후, 온도가 32±0.1℃에 도달하였을 때 식각 공정을 수행하였다. Cu/Mo-Ti 금속막의 총 식각 시간은 엔드포인트 검출(End Point Detection, EPD)을 기준으로 하여 오버 에치(Over Etch) 15%를 주어 실시하였다. 또한, 상기와 동일한 방법으로, 유리 기판 상에 인듐산화막(a-ITO)을 증착하고, 상기와 동일한 방법으로 인듐산화막을 식각하였다. 다만, 인듐산화막에 대해서는 150sec. Etch 시간을 주어 식각을 실시하였다. 기판을 넣고 분사를 시작하여 식각이 다 되면 꺼내어 탈이온수로 세정한 후, 열풍건조장치를 이용하여 건조하고, 포토레지스트 박리기(PR stripper)를 이용하여 포토레지스트를 제거하였다. 세정 및 건조 후 전자주사현미경(SEM; 모델명: S-4700, HITACHI사 제조)을 이용하여 식각 특성을 평가하여 하기 표2 및 3에 나타내었다.The Cu / Mo-Ti metal film deposited on the glass substrate by the sputtering method was etched using the etchant compositions of Example 1, Comparative Example 1 and Comparative Example 2 prepared above. Etching solution prepared in a spray etching experiment equipment (model name: ETCHER (TFT), SEMES Co., Ltd.) was added to warm the temperature to 32 ℃, and the etching process was performed when the temperature reached 32 ± 0.1 ℃. The total etching time of the Cu / Mo-Ti metal film was performed by giving 15% of over etch based on End Point Detection (EPD). In the same manner as above, an indium oxide film (a-ITO) was deposited on the glass substrate, and the indium oxide film was etched by the same method as above. However, for the indium oxide film, 150 sec. Etching was performed by giving an etching time. The substrate was sprayed, and when the etching was completed, the substrate was ejected, removed, washed with deionized water, dried using a hot air dryer, and removed using a photoresist stripper. After washing and drying, the etching characteristics were evaluated using an electron scanning microscope (SEM; model name: S-4700, manufactured by HITACHI Co., Ltd.), and are shown in Tables 2 and 3 below.
또한, 과산화수소수의 연쇄분해반응에 의한 과열정도를 측정하기 위하여, 상기 실시예1 내지 4, 비교예1 및 비교예2 각각의 식각액에 3000ppm에 해당하는 Cu 분말을 용출 시킨 후, 일정 시간 방치하여 온도를 측정하였다. 상기 실험결과를 하기 표 2에 나타내었다.In addition, in order to measure the degree of superheat caused by the chain decomposition reaction of hydrogen peroxide solution, the Cu powder corresponding to 3000 ppm was eluted in each of the Examples 1 to 4, Comparative Example 1 and Comparative Example 2, and then left to stand for a predetermined time. The temperature was measured. The experimental results are shown in Table 2 below.
식각 특성Of Cu / Mo-Ti
Etching characteristics
식각특성a-ITO
Etching characteristics
온도 [℃]Cu eluting at 3000 ppm
Temperature [℃]
Side Etch(㎛)One side
Side Etch (μm)
상기 표2 및 도1 내지 4에서 확인할 수 있는 바와 같이, 실시예1 내지 4 및 비교예2의 식각액은 모두 양호한 식각특성을 나타냈다. 그러나, 비교예2의 식각액의 경우는 Cu 3000ppm의 용출 후, 온도가 각각 99.9℃까지 상승하여 안정성이 현저히 저하되는 특성을 보인 반면, 실시예1의 식각액의 경우는 41.2~49.9℃까지만 상승하여 비교예2의 식각액과 비교하여 크게 향상된 안정성을 나타냈다. As can be seen in Table 2 and FIGS. 1 to 4, the etchant of Examples 1 to 4 and Comparative Example 2 showed good etching characteristics. However, in the case of the etching solution of Comparative Example 2, after the elution of 3000 ppm of Cu, the temperature rose to 99.9 ° C., respectively, and the stability was markedly lowered. Compared with the etching solution of Example 2, it showed a significantly improved stability.
비교예1의 경우는 Cu 3000ppm 용출 후, 온도가 41.0℃까지만 상승하여 안정성 면에서 바람직한 특성을 보였지만, 식각성능이 현저히 부족한 것으로 확인되었다.In Comparative Example 1, after eluting with 3000 ppm of Cu, the temperature was increased only to 41.0 ° C., showing desirable properties in terms of stability, but it was confirmed that the etching performance was remarkably insufficient.
상기 표3에 나타낸 Cu/Mo-Ti 식각 후의 편측 Side Etch 및 Taper Angle로부터도 본 발명의 실시예1의 식각액 조성물이 비교예1과 비교하여 우수한 식각특성을 나타냄을 확인할 수 있다.It can be seen that the etching liquid composition of Example 1 of the present invention shows excellent etching characteristics as compared to Comparative Example 1 from the one-sided side etching and the taper angle after Cu / Mo-Ti etching shown in Table 3 above.
Claims (10)
b)상기 게이트 전극을 포함한 기판 상에 게이트 절연층을 형성하는 단계;
c)상기 게이트 절연층 상에 반도체층을 형성하는 단계;
d)상기 반도체층 상에 소스/드레인 전극을 형성하는 단계; 및
e)상기 드레인 전극에 연결된 화소전극을 형성하는 단계를 포함하는 액정표시장치용 어레이 기판의 제조방법에 있어서,
상기 (a), (d) 및 (e)단계 중 하나 이상의 단계가 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막 중에서 선택되는 1종 이상의 막을 포함하는 금속막을 형성하고, 상기 금속막을 식각액 조성물로 식각하여 각각의 전극을 형성하는 단계를 포함하며,
상기 식각액 조성물은, 조성물 총 중량에 대하여 A)수산암모늄(Ammonium Oxalate) 2 내지 10중량%, B)과산화수소(H2O2) 0.1내지10 중량%, C)함불소 화합물 0.01 내지 5중량%, D)수용성 시클릭아민 화합물 0.01 내지 5.0 중량% 및 E)잔량의 물을 포함하는 것을 특징으로 하는 액정표시장치용 어레이 기판의 제조방법.a) forming a gate electrode on the substrate;
b) forming a gate insulating layer on the substrate including the gate electrode;
c) forming a semiconductor layer on the gate insulating layer;
d) forming a source / drain electrode on the semiconductor layer; And
e) a method of manufacturing an array substrate for a liquid crystal display device comprising forming a pixel electrode connected to the drain electrode;
At least one of the steps (a), (d) and (e) forms a metal film including at least one film selected from a copper metal film, a molybdenum metal film, and an indium oxide film, and the metal film is used as an etching solution composition. Etching to form a respective electrode,
The etchant composition, based on the total weight of the composition A) 2 to 10% by weight of ammonium hydroxide (B), B) 0.1 to 10% by weight of hydrogen peroxide (H 2 O 2 ), C) 0.01 to 5% by weight, D) 0.01 to 5.0% by weight of a water-soluble cyclic amine compound and E) a residual amount of water.
상기 액정표시장치용 어레이 기판이 박막트랜지스터(TFT) 어레이 기판인 것을 특징으로 하는 액정표시장치용 어레이 기판의 제조방법. The method according to claim 1,
The method of manufacturing an array substrate for a liquid crystal display device, wherein the array substrate for a liquid crystal display device is a thin film transistor (TFT) array substrate.
상기 구리계 금속막은 구리를 주성분으로 하는 금속막으로서, 순수 구리막 및 구리 합금막을 포함하며,
상기 몰리브덴계 금속막은 몰리브데늄을 주성분으로 하는 금속막으로서, 순수 몰리브데늄막 및 몰리브데늄 합금막을 포함하며, 상기 몰리브데늄 합금막은 티타늄(Ti), 탄탈륨(Ta), 크롬(Cr), 니켈(Ni), 네오디늄(Nd), 및 인듐(In)으로 이루어진 군으로부터 선택되는 1종 이상의 금속과 몰리브데늄의 합금막이며,
상기 인듐계 산화막은 인듐을 주성분으로 하는 금속막으로서, 인듐아연산화막(IZO) 또는 인듐주석산화막(ITO)인 것을 특징으로 하는 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막 중에서 선택되는 1종 이상의 막을 포함하는 금속막의 식각액 조성물.The method according to any one of claims 3 to 6,
The copper-based metal film is a metal film containing copper as a main component, and includes a pure copper film and a copper alloy film.
The molybdenum-based metal film is a metal film mainly composed of molybdenum, and includes a pure molybdenum film and a molybdenum alloy film, and the molybdenum alloy film includes titanium (Ti), tantalum (Ta), and chromium (Cr). , An alloy film of molybdenum and at least one metal selected from the group consisting of nickel (Ni), neodymium (Nd), and indium (In),
The indium oxide film is a metal film containing indium as a main component, and is selected from a copper metal film, a molybdenum metal film, and an indium oxide film, which is an indium zinc oxide film (IZO) or an indium tin oxide film (ITO). An etching liquid composition of a metal film containing the above film.
(b)상기 (a)단계에서 형성된 금속막 상에 선택적으로 광반응 물질을 남기는 단계; 및
(c)청구항3의 식각액 조성물을 사용하여 상기 (b)단계에서 처리된 금속막을 식각하는 단계를 포함하는 구리계 금속막, 몰리브덴계 금속막 및 인듐계 산화막 중에서 선택되는 1종 이상의 막을 포함하는 금속막의 식각방법.(a) forming a metal film on the substrate, the metal film including at least one film selected from a copper metal film, a molybdenum metal film and an indium oxide film;
(b) selectively leaving a photoreactive material on the metal film formed in step (a); And
(c) a metal comprising at least one film selected from a copper-based metal film, a molybdenum-based metal film, and an indium oxide film comprising etching the metal film treated in the step (b) using the etching solution composition of claim 3; Membrane etching method.
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