KR20110137207A - Forming method of wafer solder bump using bump-shaped wetting layer, wafer having solder bump manufactured using the same and joining method of flip chip using the same - Google Patents

Forming method of wafer solder bump using bump-shaped wetting layer, wafer having solder bump manufactured using the same and joining method of flip chip using the same Download PDF

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Publication number
KR20110137207A
KR20110137207A KR1020100057301A KR20100057301A KR20110137207A KR 20110137207 A KR20110137207 A KR 20110137207A KR 1020100057301 A KR1020100057301 A KR 1020100057301A KR 20100057301 A KR20100057301 A KR 20100057301A KR 20110137207 A KR20110137207 A KR 20110137207A
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South Korea
Prior art keywords
wafer
wet layer
solder bump
solder
forming
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KR1020100057301A
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Korean (ko)
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KR101156175B1 (en
Inventor
유세훈
이창우
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한국생산기술연구원
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Priority to KR1020100057301A priority Critical patent/KR101156175B1/en
Publication of KR20110137207A publication Critical patent/KR20110137207A/en
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Publication of KR101156175B1 publication Critical patent/KR101156175B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9212—Sequential connecting processes
    • H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
    • H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector

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  • Wire Bonding (AREA)

Abstract

PURPOSE: A method for forming a wafer solder bump and a wafer in which a solder bump is formed using the same and a flip chip bonding method are provided to uniformly form a shape of the solder bump by flocculating molten solder by the surface tension of a wet layer around. CONSTITUTION: An electrode(20) is formed in one side of a wafer. A wet layer(30) is formed using a capillary. The height of the wet layer is equalized by a coining process. A wafer is located in a wave soldering device in which molten solder is effused. The wafer is touched to the molten solder. A solder bump(40) is formed in order to surround the around wet layer which is projected. A chip(11) in which a solder bump is formed is welded in a substrate(50). Adhesive resin(70) is allowed in a space between the substrate and the chip.

Description

Forming method of wafer solder bump using protrusion wetted layer, wafer formed solder bump formed using the same, and flip chip bonding method using the same {Forming Method of Wafer Solder Bump Using Bump-shaped Wetting Layer, Wafer Having Solder Bump Manufactured Using the Same and Joining Method of Flip Chip Using the Same}

The present invention relates to a method of forming solder bumps on one surface of a wafer by using a protrusion-shaped wet layer, a wafer on which solder bumps are produced by the method, and a flip chip bonding method using the same. The present invention relates to a solder bump forming method by a method in which a molten solder is agglomerated by surface tension around the wet layer due to the protrusion, a wafer on which a solder bump produced by the method is formed, and a flip chip bonding method using the same. .

Solder bumps are formed on the chip pad for the purpose of bonding the silicon chip to the substrate, and the solder bumps electrically and mechanically connect the chip and the substrate.

Such solder bumps can be formed by performing methods such as screen printing, evaporation, and electrodepositon. In particular, with the miniaturization of chips in recent years, the application of the electroplating method which can cope with a fine pitch is increasing.

However, in the conventional solder bump forming method using the electroplating method, the process of forming the solder bumps on the pad of the chip is complicated, there is a problem that the production time is increased, the production cost is increased, see the drawings below. To explain.

1 is a cross-sectional view showing a conventional process of forming a solder bump on a chip.

As shown, it can be seen that the conventional solder bump forming method undergoes a series of steps in several steps.

That is, various processes such as a photoresist masking process, a process of forming voids, sputtering, and the like are performed several times. Particularly, the conventional solder bump forming method shown in the drawing is sequentially subjected to a 14 step process. Then, a solder bump is finally formed on the pad of the chip through a process of reflowing the solder.

As described above, in the case of the conventional solder bump forming method, there is a problem in that the production efficiency decreases and the production cost may increase as the production time and production process become longer.

Therefore, a method for solving such a problem is required.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned conventional problems, and to provide a method of forming a wet layer protruding on a wafer and forming solder bumps using wave soldering.

The present invention also provides a wafer having solder bumps formed on one surface thereof.

In addition, the present invention provides a flip chip bonding method using a chip separated from a wafer on which solder bumps are formed on one surface.

The objects of the present invention are not limited to the above-mentioned objects, and other objects that are not mentioned will be clearly understood by those skilled in the art from the following description.

Wafer solder bump forming method using a protrusion-shaped wet layer of the present invention for solving the above process, the wet layer forming step and the melting solder to form a protrusion-shaped wet layer on the plurality of electrodes formed on the wafer to the top Solder bump forming step of placing the wafer in the outflow wave soldering device, and contacting the wafer to the outflowing molten solder to form a solder bump surrounding the protruding wet layer.

The wet layer forming step may form a stud bump-shaped wet layer using a capillary.

In addition, the wet layer forming step may further include a coining process for uniformizing the height of the wet layer.

The wet layer forming step may include a photoresist coating process of applying a photoresist to one surface of the wafer, a masking process of attaching a mask to a portion except for an area of a cross section of the wet layer to be produced, and exposing and developing the photoresist to the mask. Process of forming voids by etching portions to which the metal is not attached; plating process of filling the pores with metal to form a wet layer on the surface of the wafer; and removing the mask and the photosensitive agent to form a void-shaped wet layer. It may include a wet layer forming process.

In addition, the wafer with the solder bumps produced using the same has a plurality of electrodes having conductivity, a wetting layer formed in a protrusion shape on the electrode, and a melted solder flowing out of the wave soldering apparatus in contact with the wetting layer. It includes a solder bump formed to surround the wet layer.

And. The wet layer may be formed in a stud bump shape by a capillary.

In addition, the flip chip bonding method using the same, the bonding step of pressing the solder bump and the conductive pad of the chip produced by using the wafer manufactured by the method and the underfill step of underfilling the space between the chip and the substrate with a resin It may include.

The method for forming a wafer solder bump using the protruding wet layer of the present invention for solving the above problems, the wafer on which the solder bumps are produced, and the flip chip bonding method using the same have the following effects.

First, since the wetted layer is formed in the shape of a protrusion, the melt solder can be agglomerated by the surface tension around the wetted layer, so that the shape of the solder bumps can be uniformly formed and is not interfered by adjacent solder bumps. There is this. Therefore, there is an advantage that the effective packaging can be made corresponding to the fine pitch.

Second, there is an advantage that the wet layer is located inside the solder ball to prevent breakage of the solder bumps due to external force when bonding the chip and the substrate.

Third, since the entire process can be efficiently shortened, there is an advantage that the production time is reduced, the overall productivity is increased, thereby lowering the product cost.

The effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

1 is a cross-sectional view showing a conventional process of forming solder bumps on a chip;
2 is a view showing a process of forming a wet layer by a wafer solder bump forming method according to an embodiment of the present invention;
3 is a cross-sectional view showing a wet layer formed on an electrode by a method of forming a wafer solder bump according to an embodiment of the present invention;
4 is a cross-sectional view showing a process of contacting the molten solder to the wafer by the wafer solder bump forming method according to an embodiment of the present invention;
FIG. 5 is a cross-sectional view illustrating solder bumps formed on a wet layer by a method of forming a wafer solder bump according to an embodiment of the present invention; FIG. And
6 is a cross-sectional view illustrating a process of bonding a chip having a solder bump to a substrate by a method of forming a wafer solder bump according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. In describing the present embodiment, the same designations and the same reference numerals are used for the same components, and further description thereof will be omitted.

As described in the background art, the conventional flip chip bonding method has a problem in that a process of forming solder bumps on a pad of a chip is complicated. Therefore, the present invention provides a method of directly bonding the pads of the substrate and the solder bumps by forming a solder bump on one surface of the chip, hereinafter will be described in order to go through the process of the present invention to form a flip chip package. .

First, a wafer for producing a chip is produced. In general, in order to manufacture a chip, a process of dividing the wafer after manufacturing a disk-shaped wafer may be performed to obtain individual chips.

In the present invention, in order to form solder bumps on a chip, a wave soldering process is performed on the wafer. The wafer has an electrode formed on one surface thereof, and a protruding wet layer for wave soldering is formed on the electrode. The wet layer has the purpose of allowing the molten solder to aggregate when the wafer is exposed to the molten solder during wave soldering.

2 is a view showing a process of forming the wet layer 30 by the wafer solder bump forming method according to an embodiment of the present invention.

Referring to FIG. 2, a process of forming the wet layer 30 using the capillary C is illustrated in sequence.

As shown, the wet layer 30 of the present invention may be formed using a capillary (C). In general, the material for forming the wet layer 30 may be made of gold, copper, aluminum, silver, alloys thereof, and the like, which are melted in a liquid state and formed on the electrode 20 using a capillary (C). Will be injected into the

In this process, the molten wet layer paste L is approached on the electrode 20 by using a tip portion of the capillary C. Thereafter, the wet layer paste L is compressed by the tips of the electrode 20 and the capillary C, and has a flat and broadly pressed shape. As the capillary C is removed, the central portion of the wet layer paste L attached to the electrode 20 protrudes by the tip of the capillary C. As shown in FIG.

Thereafter, the wet layer paste L is cured to form the wet layer 30, which has a stud bump shape protruding from the center portion thereof.

On the other hand, the height of the stud bump-shaped wet layer 30 formed by such a work may not be constant. Therefore, in this case, a coining process of forming the same height of the wet layer 30 may be further performed. In this process, by using a member having a flat surface, by applying a pressure to the upper end of the plurality of the wet layer 30 by pressing a certain height, all of the height of the wet layer 30 is formed to be the same.

3 is a cross-sectional view showing the wet layer 30 formed on the electrode 20 by the wafer solder bump forming method according to an embodiment of the present invention.

Referring to FIG. 3, a cross section of a wafer 10 on which a wet layer 30 is formed is shown.

Through the above process, the stud bump-shaped wet layer 30 is formed on the electrode 20 formed on one surface of the wafer 10, and the wafer 10 manufactured in such a shape is then subjected to a wave soldering process. Rough This will be described later.

Meanwhile, in addition to the stud bump shape of the present embodiment, the wet layer 30 may be formed in various protrusion shapes, and the method of forming the wet layer 30 may also be variously formed.

For example, a method of applying a photoresist to one surface of a wafer and attaching a mask to a portion other than the area of the cross section of the wetted layer to be exposed and developing the photoresist to etch the portion where the mask is not attached may be used. have.

That is, by attaching a mask except a portion where a wet layer is to be formed on the photoresist applied to the entire area of the wafer, when the photosensitive agent is exposed to light and subjected to an etching process, the other part is protected by a mask and a wet layer is formed. Only the part that will be etched can be etched.

As a result, pores are formed in the applied photosensitive agent as many as the number of wet layers to be generated, and then a process of filling metals such as copper and nickel into the pores may be performed.

After that, the mask and the photoresist are removed from the wafer. Eventually, the wet layer paste filled and cured in the voids remains on the wafer, which forms a protrusion-shaped wet layer.

As such, the wet layer may be formed to protrude on the wafer to have protrusion shapes of various shapes through various methods.

4 is a cross-sectional view illustrating a process of contacting the molten solder 230 to the wafer 10 by the wafer solder bump forming method according to an embodiment of the present invention.

Referring to FIG. 4, the wave soldering apparatus 200 is equipped with a wafer 10 on which the wet layer 30 is formed, and the lower chamber 220 is provided with a melting solder 230.

After the wetting layer 30 is formed, a wave soldering process is performed using the wave soldering apparatus 200 to form solder bumps on the wafer 10 on which the protruding wet layer 30 is formed. Hereinafter, a wave soldering process according to an embodiment of the present invention will be described in detail.

The lower chamber 220 of the wave soldering apparatus 200 is filled with the melting solder 230, and the wafer 10 is fixed on the lower chamber 220. In this case, the wafer 10 is positioned so that the surface on which the wet layer 30 is formed faces the lower chamber 220, so that the wet layer 30 may be exposed to the molten solder 230.

Specifically, the lower chamber 220 is provided with a fan 210 for flowing out the molten solder 230 to the top. The fan 210 is provided to face the direction in which the molten solder 230 is upward, and thus the molten solder 230 flows out of the lower chamber 220. That is, the molten solder 230 flows out to be exposed to the outside of the upper portion of the lower chamber 220 and is maintained to circulate the lower chamber 220.

In the wave soldering apparatus 200 having the structure as described above, the wafer 10 fixed to the holder is brought into contact with the molten solder exposed through the upper portion of the lower chamber.

The holder has a structure capable of transferring the wafer 10 in the direction of the lower chamber 220. After the wafer 10 is fixed to the holder, the holder is downwardly lowered so that the bottom surface of the wafer 10 is entirely melt solder 230. ). According to the present process, the wet layer 30 positioned to face the melting solder 230 is also in direct contact with the melting solder 230.

In addition, when the wafer 10 is removed from the molten solder 230 after a predetermined time, the molten solder 230 is aggregated in the form of a drop so as to surround the wet layer 30. That is, the melt solder 230 is agglomerated on the surface of the wet layer 30 by the surface tension. Then, as the melting solder 230 is cured, solder bumps are formed at the respective wet layer 30 positions.

In the present invention, since the wetting layer 30 is formed in a protrusion shape, such an operation may proceed more easily. When the wet layer 30 is formed as a flat surface, when the molten solder 230 is in contact with the liquid layer, the molten solder 230 is likely to spread widely along the flat surface.

That is, when the wet layer 30 is formed as a flat surface, there is a problem that the solder bumps may be formed flat and wide. In addition, as the chip becomes more directly in recent years, the pitch between electrodes is greatly reduced, and in this case, the solder bumps formed on the electrodes are likely to be in contact with and interfere with the solder bumps of other electrodes.

On the other hand, when the wet layer 30 is formed in the shape of a protrusion, since the surface tension acts along the surface of the protruding wet layer 30, the melting solder 230 aggregates to surround the wet layer 30. As a result, it is possible to form a solder bump having a drop shape close to a circle. As a result, a chip having a uniform and high quality can be manufactured.

6 is a cross-sectional view illustrating a state in which the solder bumps 30 are formed on the wet layer 30 by the wafer solder bump forming method according to an embodiment of the present invention.

Referring to FIG. 6, the solder bumps 40 are formed to surround the protruding wet layer 30.

As described above, the wafer 10 having the solder bumps 40 formed on one surface thereof is produced, and the solder bumps 40 are stably aggregated on the wet layer 30.

In this embodiment. As shown, the solder bump 40 is formed to be close to the circular along the circumference of the wet layer 30, in particular, because the wet layer 30 according to an embodiment of the present invention has a double protrusion structure Solder bumps 40 have a shape and size suitable for bonding.

Hereinafter, a process of bonding the chip manufactured by the above method to the substrate will be described.

7 is a cross-sectional view illustrating a process of bonding the chip 11 having the solder bumps 40 to the substrate 50 by the wafer solder bump forming method according to an embodiment of the present invention.

Referring to FIG. 7, the chip 11 having the solder bumps 40 formed on one surface thereof is bonded to the substrate 50.

After the wave soldering is performed, the wafer 10 having the solder bumps 40 formed on one surface thereof is produced, and the chips 11 having the desired size can be obtained by dividing the wafer 10. In other words, the chip 11 is obtained by dividing the wafer 10 into a predetermined size, and has the electrode 20, the wet layer 30, and the solder bumps 40 in the same manner as the wafer 10.

First, the solder bumps 40 are positioned on the pads 60 of the substrate 50, and the chips 11 are positioned and pressed onto the substrate 50. Accordingly, the solder bumps 40 pressed between the chip 11 and the substrate 50 are deformed and electrically connect the chip 11 and the substrate 50 to each other.

On the other hand, in general, there is a possibility that cracks may occur in the solder bumps 40 due to pressure when performing the present process, and the phenomenon is such that the shape of the solder bumps 40 is not uniformly formed or applied to the pressure. This can happen if the direction of is twisted in the vertical direction.

However, the chip 11 manufactured according to the present invention may prevent such a phenomenon because the wet layer 30 is present inside the solder bumps 40. That is, the wet layer 30 may serve as a skeleton in the solder bumps 40 to prevent the solder bumps 40 from twisting. As such, the wet layer 30 has an advantage of achieving stable bonding not only in the solder bump 40 forming process but also in the flip chip bonding process.

Next, an adhesive resin 70 is underfilled in a space between the chip 11 and the substrate 50 electrically connected to each other by the solder bumps 40, and then the adhesive resin 70 is cured. The flip chip package is then completed.

The wafer solder bump forming method using the protrusion-shaped wet layer according to the present invention, the wafer with the solder bumps produced using the same, and the flip chip bonding method using the same have been described.

According to the present invention, the solder bumps may be formed on the wafer by only one operation by performing wave soldering, and in particular, the bumps of the bumps may be formed to have uniform and excellent quality. In addition, the process of bonding the chip and the substrate manufactured in this manner to each other is greatly shortened, there is an advantage that the productivity of the process can be increased as the reliability of the bonding is increased.

As described above, the preferred embodiments of the present invention have been described, and the fact that the present invention can be embodied in other specific forms in addition to the above-described embodiments without departing from the spirit or scope thereof has ordinary skill in the art. It is obvious to them. Therefore, the above-described embodiments should be regarded as illustrative rather than restrictive, and thus, the present invention is not limited to the above description and may be modified within the scope of the appended claims and their equivalents.

10: wafer
11: chip
20: electrode
30: wet layer
40: solder bump
50: substrate
60: pad
70: adhesive resin

Claims (7)

A wet layer forming step of forming a protrusion-shaped wet layer on the plurality of electrodes formed on the wafer; And
A solder bump forming step of placing the wafer in a wave soldering apparatus in which a molten solder flows out and forming a solder bump surrounding the protrusion-shaped wet layer by contacting the wafer with the outflowing molten solder;
Wafer solder bump forming method comprising a. The method of claim 1,
The wet layer forming step,
Wafer solder bump formation method for forming a stud bump-shaped wet layer using a capillary. The method of claim 2,
The wet layer forming step,
Wafer solder bump forming method further comprises a coining process for equalizing the height of the wet layer. The method of claim 1,
The wet layer forming step,
A photoresist coating process of coating a photoresist on one surface of the wafer;
A masking process of attaching a mask to a portion except an area of a cross section of the wet layer to be generated;
A pore forming process of exposing and developing the photosensitive agent to form pores by etching portions where the mask is not attached;
A plating process of filling the pores with metal to form a wet layer on the surface of the wafer; And
A wetting layer forming process of removing the mask and the photosensitive agent to form a wetting layer having a pore shape;
Wafer solder bump forming method comprising a. A plurality of electrodes having conductivity;
A wetting layer formed on the electrode in a protrusion shape; And
A solder bump formed to surround the wetted layer of the protrusion shape while the molten solder flowing out of the wave soldering device contacts the wetted layer;
Solder bump formed wafer comprising a. The method of claim 5,
The wet layer is a wafer with a solder bump is formed in a stud bump shape by the capillary. Bonding step of pressing the solder bump of the chip produced by the wafer manufactured by any one of claims 1 to 4 and the conductive pad of the substrate; And
An underfill step of underfilling the space between the chip and the substrate with a resin;
Flip chip bonding method comprising a.
KR1020100057301A 2010-06-16 2010-06-16 Forming Method of Wafer Solder Bump Using Bump-shaped Wetting Layer, Wafer Having Solder Bump Manufactured Using the Same and Joining Method of Flip Chip Using the Same KR101156175B1 (en)

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KR1020100057301A KR101156175B1 (en) 2010-06-16 2010-06-16 Forming Method of Wafer Solder Bump Using Bump-shaped Wetting Layer, Wafer Having Solder Bump Manufactured Using the Same and Joining Method of Flip Chip Using the Same

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Application Number Priority Date Filing Date Title
KR1020100057301A KR101156175B1 (en) 2010-06-16 2010-06-16 Forming Method of Wafer Solder Bump Using Bump-shaped Wetting Layer, Wafer Having Solder Bump Manufactured Using the Same and Joining Method of Flip Chip Using the Same

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KR20110137207A true KR20110137207A (en) 2011-12-22
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200136215A (en) * 2019-05-27 2020-12-07 주식회사 아이디피 Wafer level packaging method with solderball for Cap wafer, and Cap wafer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070080894A (en) * 2006-02-09 2007-08-14 삼성전자주식회사 Method for manufacturing wafer level package using gold bumb
KR100762909B1 (en) 2006-08-31 2007-10-08 주식회사 하이닉스반도체 Manufacturing process of flip chip package
US7674651B2 (en) * 2006-12-26 2010-03-09 International Business Machines Corporation Mounting method for semiconductor parts on circuit substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200136215A (en) * 2019-05-27 2020-12-07 주식회사 아이디피 Wafer level packaging method with solderball for Cap wafer, and Cap wafer

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