KR20110117021A - Precursor delivery system - Google Patents

Abstract

A precursor source vessel is provided for providing the evaporated precursor to the reaction chamber. The precursor source container includes a lid having a first port, a second port, and a third port. The precursor source container also includes a base that is removably attached to the lid. The base includes a recessed area formed therein. One of the first port, the second port and the third port is a buff port configured to relieve head pressure in the source container after the source container is installed and before use of the source container in semiconductor processing.

Description

Precursor Delivery System {PRECURSOR DELIVERY SYSTEM}

TECHNICAL FIELD This application generally relates to semiconductor processing equipment and, more particularly, to an apparatus for delivering a reactant gas to a processing chamber.

Chemical vapor deposition (CVD) is known as a process in the semiconductor industry for forming thin films on substrates such as silicon wafers. In CVD, the reactant gas (precursor gas) of another reactant is delivered to one or more substrates of the reaction chamber. In many cases, the reaction chamber includes only one reaction chamber supported on a substrate holder (susceptor, etc.), wherein the substrate and the substrate holder are maintained at a desired process temperature. The reaction gases react with each other to form a thin film on the substrate, and the growth rate is controlled by the temperature or the amount of the reaction gases.

In many applications, the reactant gas is stored in gaseous form in the reactor. In such applications, the reactant vapor is often a gas at ambient pressure and temperature. Examples of such gases are nitrogen, oxygen, hydrogen, ammonia. In some cases, however, steam (“precursors”) of source chemicals are used that are liquid or solid (eg, hafnium chloride) at ambient pressure and temperature. This source chemical can be heated to produce a sufficient amount of steam in the reaction process. For some solid materials, referred to herein as "solid source precursors", the vapor pressure is low at room temperature so that the material must be heated and / or maintained at a very low pressure to produce a sufficient amount of reactant vapor. Once evaporated, the vapor phase reactants, through the processing system, to prevent the occurrence of unwanted condensation on valves, filters, conduits, and other components involved in delivering the vapor phase reactants to the reaction chamber, at or above the vaporization point. It is important to keep at temperature. Vapor phase reactants, naturally from solid or liquid materials, are useful for chemical reactions in a variety of industries.

Atomic layer deposition (ALD) is another known method of forming a thin film on a substrate. In many applications, ALD uses the solid and / or liquid source chemicals described above. ALD is a type of vapor deposition in which films are formed through self-saturation reactions run in cycles. The thickness of the film depends on the number of cycles performed. In an ALD process, gas precursors are alternately and repeatedly supplied to a substrate or wafer to form a thin film of material on the wafer. One reactant is adsorbed in the self-limiting process of the wafer. The other pulse reactant then reacts with the adsorbed material to form a single molecule layer of the desired material. Degradation can occur, for example, in ligand exchange or gettering reactions through reaction with a suitably selected reactant. In a typical ALD reaction, only a molecular monolayer is formed every cycle. Thicker films are produced through repeated growth cycles until the target thickness is obtained.

Typical solid or liquid source precursor delivery systems include solid or liquid source precursor vessels and heating means (eg, radiant heat lamps, resistance heaters, etc.). The container comprises a solid (eg in powder form) or liquid source precursor. The heating means heats the vessel to increase the vapor pressure of the precursor gas in the vessel. The vessel has an inlet and outlet for the flow of inert carrier gas (eg N ₂ ) through the vessel. The carrier gas sweeps the precursor vapor together with the carrier gas through the vessel outlet and finally into the substrate reaction chamber. The vessel typically includes a shutoff valve for fluidly isolating the contents of the vessel from outside the vessel. Usually, one shutoff valve is installed upstream of the vessel inlet and the other shutoff valve is installed downstream of the vessel outlet. Precursor source vessels are usually supplied to tubes extending from inlets and outlets, shut-off valves of tubes, fittings of valves, the fittings being connected to the gas flow lines of the remaining substrate processing apparatus. It is desirable to provide a number of additional heaters and gas flow lines between the precursor source vessel and the reaction chamber for heating the various valves and to prevent precursor gases from condensing and depositing on such components. Thus, the gas delivery component between the source vessel and the reaction chamber is often referred to as a "hot zone" where the temperature is kept above the evaporation / condensation temperature of the precursor.

Serpentine and curved flow paths for the flow of carrier gas are provided, at the same time the flow paths are exposed to a solid or liquid precursor source. For example, U.S. Patent No. 4,883,362; 7,122,085; And 7,156,380 each disclose such a death path.

In one aspect of the invention, a precursor source container is provided. The precursor source vessel includes a lid having an inlet port, an outlet port, and a buff port. The precursor source container further includes a base removably attached to the lid. The base includes a recessed area formed therein.

In another aspect of the invention, a precursor source container is provided. The precursor source container includes a base having a recessed region formed therein. The recessed area is configured to receive the precursor material. The precursor source container also includes a lid that is removably attached to the base. The lid has an inlet port, an outlet port, and a buff port. The buff valve is operatively attached to the lid. The buff valve is operatively connected to the buff port.

In another aspect of the invention, a precursor source container is provided. The precursor source container includes a bottom, a contact surface, a side extending between the contact surface and the bottom, and an inner surface extending from the contact surface to define a recessed region in the base. The precursor source container also includes a lid that is removably attached to the base. The lid includes an inlet port, an outlet port, and a buff port.

In another aspect of the invention, a precursor source container is provided. The precursor source vessel includes a first port, a second port, and a third port. The precursor source container also includes a base that is removably attached to the lid. The base includes a recessed area formed therein.

In another aspect, an apparatus is provided for connecting a chemical reactant source vessel to a gas interface assembly of a vapor phase reactor for vapor processing of a substrate. The apparatus consists of a vessel, a gas interface assembly of a vapor phase reactor, and a connection assembly for connecting the vessel to a gas interface assembly. The vessel has a chamber for containing solid or liquid chemical reactants. The container includes an inlet and an outlet for fluid communication with the chamber. The gas interface assembly has a gas inlet configured to be connected to the outlet of the vessel chamber. The connection assembly consists of a track component and a lift assembly. The track component includes one or more elongated tracks for movably engaging one or more track engaging members of the container. The lift assembly is configured to move the track component vertically between the raised position and the lowered position. When one or more track engagement members of the vessel engage one or more tracks of the track component, and when the lift assembly moves the track component to the raised position, the outlet of the vessel is in direct fluid communication with the gas inlet of the gas interface assembly. Will be placed to communicate.

In order to summarize the advantageous effects over the present invention and the prior art, certain objects and advantageous effects of the present invention have been described above. Of course, it should be understood that all such objects and advantageous effects may not necessarily be achieved in any particular embodiment of the present invention. Thus, for example, one of ordinary skill in the art can embody or implement the present invention in a way that achieves or optimizes one advantageous effect or group of advantageous effects without necessarily achieving another object or effect suggested or suggested herein. It will be recognized.

All such embodiments are included within the scope of the invention described herein. These and other embodiments of the present invention can be fully understood by those skilled in the art through the detailed description of the preferred embodiments with reference to the attached drawings, which are not limited to the specific preferred embodiments described in the detailed description. Do not.

These and other aspects of the invention will be readily apparent to those skilled in the art from the following detailed description, claims, and drawings, which are intended to illustrate the invention and are not intended to limit the invention.

1 is a schematic diagram of a conventional precursor source assembly and reactor chamber assembly.
2 is a perspective view of a conventional solid precursor source vessel.
3 shows the chemical concentrations of ideal and less ideal sources in reactant gas pulses for depositing atomic layers.
4 is a schematic representation of a conventional precursor source vessel and gas panel.
5 is a schematic diagram of a gas source panel and a precursor source vessel with a surface mount valve.
6 is a schematic of a precursor source vessel with a surface mount valve and a gas panel in close thermal contact with the vessel.
7 is a perspective view of a precursor source vessel, a gas interface assembly for fluidly communicating with the vessel, and a quick-connection assembly for connecting and disengaging the vessel with the gas interface assembly.
8 is an exploded perspective view of the container of FIG. 7.
9 is a rear perspective cross-sectional view of the container of FIG. 7.
10 is a rear cross-sectional view of the container of FIG. 7.
11A is an exploded view of another embodiment of a precursor source vessel.
FIG. 11B is a top perspective view of the lid for the precursor source container shown in FIG. 11A. FIG.
FIG. 11C is a bottom perspective view of the lid shown in FIG. 11B. FIG.
FIG. 11D is a top perspective view of one embodiment of a base for the precursor source container shown in FIG. 11A. FIG.
FIG. 11E is a plan view of the base shown in FIG. 11D.
FIG. 11F is a cross-sectional view along the line AA of the base shown in FIG. 11E.
FIG. 11G is a cross-sectional view along the line BB of the base shown in FIG. 11E.
FIG. 11H is a cross-sectional view of another embodiment of a base for the precursor source container shown in FIG. 11A. FIG.
FIG. 11I is a top view of another embodiment of a base for the precursor source vessel shown in FIG. 11A. FIG.
11J is an exploded perspective view of another embodiment of a source container.
12 is an exploded perspective view of one embodiment of a sand insert including a tray stack.
FIG. 13 is a perspective view of the upper lamination tray of the sand insert of FIG. 12; FIG.
FIG. 14 is a plan view of the upper laminated tray shown in FIG. 13.
FIG. 15 is a perspective view of the lower lamination tray of the sand insert shown in FIG. 12; FIG.
FIG. 16 is a plan view of the lower lamination tray shown in FIG. 15.
17 is a cross sectional view of a filter mounted to a lid of a precursor source container.
FIG. 18 is one embodiment of a filter material that may be used in the filter of FIG. 17.
19 is a schematic diagram of a gas delivery system of carrier gas and reactant gas flowing through a precursor source vessel and a vapor phase reaction chamber.
20 and 21 are front perspective views of the vessel and gas interface assembly of FIG. 7 in a connected state.
22 is a front perspective view from above of the precursor source vessel and gas interface assembly of FIG. 7, showing an alternative embodiment of the quick connect assembly.
FIG. 23 is an upward front perspective view of the vessel and gas interface assembly of FIG. 22 in a connected state.
24 is a front perspective view of the underside of the vessel and gas interface assembly of FIG. 22 in a detached state.
25 is a schematic diagram of a gas delivery system of a carrier gas and a reactant gas flowing through a precursor source vessel and a reaction chamber.
26 is a perspective view of a precursor source vessel equipped with an exhaust valve.
FIG. 27 is a perspective view of the container of FIG. 26 connected to the gas interface assembly of FIGS. 22-24.
FIG. 28 is a sectional view of the container of FIG. 26 with the addition of a dedicated heating device.

The present application discloses an improved precursor source vessel, an apparatus and method for connecting and loading the vessel to a reactor, and an interface using a vessel equipped with a steam treatment reactor. The disclosed embodiments provide good access to the reactant vapors, reduced contamination of the gas delivery system of the reactor, and improved convenience of the precursor source vessels (eg, replaceable or refillable).

The following detailed description of the preferred embodiments and methods depicts specific embodiments that help in understanding the claims. However, those skilled in the art can practice the invention within various other embodiments and methods defined and included by the claims.

Gas Delivery System Overview

1 schematically shows a conventional precursor delivery system 6 for supplying a gaseous reactant produced from a solid or liquid precursor source vessel 10 into a gaseous reaction chamber 12. Those skilled in the art will fully understand that the precursor delivery system of the present invention may be embodied in various aspects of the gas delivery system 6 of FIG. 1. Therefore, to facilitate the understanding of the present invention, the conventional delivery system 6 will now be described.

Referring to FIG. 1, the solid or liquid source vessel 10 includes a solid or liquid source precursor (not shown). Solid source precursors are source chemicals that are solid at standard conditions (ie, room temperature, atmospheric pressure). Similarly, liquid source precursors are source chemicals that are liquid at standard conditions. The precursor evaporates in the source vessel 10 which may be maintained at or above the evaporation temperature. The evaporated reactant is then introduced into the reaction chamber 12. The reaction source vessel 10 and the reaction chamber 12 are located in the reaction source cabinet 16 and the reaction chamber vessel 18, respectively, which are preferably individually emptied and / or thermally controlled. This can be accomplished by providing components with separate cooling and heating devices, insulated and / or shutoff valves, and associated piping as is known in the art.

The illustrated gas delivery system 6 is suitable for delivering vapor phase reactants to be used in a vapor phase reaction chamber. Vapor phase reactants can be used for deposition (eg, CVD) or atomic layer deposition (ALD).

As shown in FIG. 1, through the first conduit 20, the reaction source vessel 10 and the reaction chamber 12 are adapted for selective fluid communication with each other, whereby the gaseous reactants react with the reactant source vessel 10. From the reaction chamber 12 (ALD reaction chamber). The first conduit 20 includes one or more shutoff valves 22a, 22b, wherein the shutoff valves 22a, 22b empty and / or empty one or both of the reaction source vessel 10 and the reaction chamber vessel 18. It may be used to separate the gas spaces of the reaction source vessel 10 and the reaction chamber 12 during maintenance.

Non-reactive or inert gases are preferably used as the carrier gas of the evaporated precursor. Inert gas (eg, nitrogen or argon) may be transferred into the precursor source vessel 10 through the second conduit 24. The reaction source vessel 10 includes at least one inlet for connection with the second conduit 24 and at least one outlet for recovering gas from the vessel 10. The outlet of the vessel 10 is connected to the first conduit 20. The vessel 10 can be operated at a pressure that exceeds the pressure of the reaction chamber 12. Accordingly, the second conduit 24 includes at least one shutoff valve 26 that can be used to fluidically isolate the interior of the vessel 10 during maintenance or replacement of the vessel. The control valve 27 is preferably located in the second conduit 24 outside of the reaction source cabinet 16.

In another variation, which may be an embodiment of the present invention, precursor vapor may be recovered to the reaction chamber 12 by evacuating the reaction source vessel 10 without the use of a carrier gas. This is referred to as "vapor draw".

In another variation, which may also be an embodiment of the present invention, the precursor vapor may be recovered out of the vessel 10 by an external gas stream that creates a low pressure outside the vessel, such as the Ventry effect. For example, the precursor vapor may be recovered by flowing a carrier gas towards the reaction chamber 12 along a path downstream of the vessel 10. In other conditions, this may create a pressure gradient between the vessel 10 and the flow path of the carrier gas. This pressure gradient causes the precursor vapors to flow towards the reaction chamber 12.

In order to remove the dispersed solid particles when a solid source precursor is used, the gas transport system 6 includes a purifier 28 which acts on the evaporated reactants. Purifier 28 includes one or more various purification devices, such as mechanical filters, ceramic molecular sieves, and electrostatic filters that can separate dispersed molecules, solids, or particles of minimum molecular size from the reactant gas stream. . It is also known to provide an additional purifier for the vessel 10. In particular, US published patent application US 2005 / 0000428A1 discloses a container comprising a glass crucible enclosed in a steel container, which holds a reaction source and has a lid with a filter. This lid is separated from the vessel lid attached to the steel container.

With continued reference to FIG. 1, the reaction source vessel 10 is located in a reaction source cabinet 16. The interior space 30 of the cabinet 16 can be maintained at a reduced pressure (eg, 1 mTorr to 10 Torr, sometimes about 500 mTorr) to promote radiant heating of the components inside the cabinet 16, and The components are thermally isolated from each other, facilitating the formation of constant temperature fields. In another variation, the cabinet does not empty and includes a convection-enhancing device (eg, fan, cross flow, etc.). The cabinet 16 shown includes one or more heating devices 32, such as radiant heaters. In addition, a reflector sheet 34 may also be provided, which is set to enclose the components inside the cabinet 16 so that radiant heat generated by the heating device 32 may be inside the cabinet 16. Reflect to the locating components. The reflective sheet 34 is provided on the inner wall 40, the ceiling 7, and the bottom 9 of the cabinet 16. In the apparatus shown, the substantial length of the first conduit 20 is contained within the reaction source cabinet 16, so that the first conduit 20 is originally subjected to some heat to prevent condensation of the reactant vapors.

The reactant source cabinet 16 may include a cooling jacket 36 formed between the outer wall 38 and the inner wall 40 of the cabinet. Cooling jacket 36 may include water or other coolant. The jacket 36 allows the outer surface 38 of the cabinet 16 to be maintained at or near ambient temperature.

In order to prevent or reduce the flow of gas from the reaction source vessel 10 between alternating pulses of the ALD process, it is possible to form a non-reactive gas barrier in the first conduit 20. This is often referred to as the "inert gas valving" or "diffusion barrier" of the portion of the first conduit 20, and by flowing the gas in a direction opposite to the normal reactant flow in the first conduit 20 By forming a phase barrier, the flow of reactants from the reaction source vessel 10 into the reaction chamber 12 is prevented. The gas barrier may be formed by transferring non-reactive gas to the first conduit 20 through a third conduit 50 connected to the conduit 20 at the connection point 52. The third conduit 50 can be connected to an inert gas source 54 that supplies the second conduit 24. During the time interval of conveying vapor phase pulses from the reaction source vessel 10, the non-reactive gas is preferably conveyed to the first conduit 20 via a third conduit 50. This gas may be recovered through the fourth conduit 58, which connects to the first conduit 20 at a second connection point 60 located upstream of the first connection point 52. (I.e., closer to the reaction source vessel 10). In this way, a flow of inert gas in a direction opposite to the normal reactant gas flow can be made in the first conduit 20 between the first and second connection points 52, 60 (between the reaction pulses). The fourth conduit 58 can be in communication with an evacuation source (eg a vacuum pump). Restrictions 61, and valves 56, 63, 70 may also be provided. More specific details of the gas delivery system 6 are shown and described in US published patent application US 2005 / 0000428A1.

Existing solid or liquid precursor source delivery systems, such as the system 6 shown in FIG. 1, have many drawbacks and limitations. One drawback is the need to provide a large number of additional heaters for heating the gas lines and valves between the precursor source vessel (container 10) and the reaction chamber (reaction chamber 12). In particular, precursor vapors may be constructed by maintaining components involved in such gas transport (eg, valves 22a, 22b, 70, purifier 28, conduit 20) at temperatures above the condensation temperature of the precursor. It is desirable to prevent deposition on the elements. Generally, these involved components are separated and heated by line heaters, cartridge heaters, heat lamps, and the like. Some systems (eg US Published Patent Application 2005 / 0000428A1) use additional heaters to bias these involved components above the temperature of the source vessel. Such temperature biasing helps to prevent precursor condensation on these involved components during cooling. Since the source vessel generally has higher thermal mass than the components involved in gas transport, these components are at risk of cooling to condensation temperature faster than the source vessel. This can flow into the components involved in the cooler and cause undesirable conditions in which the source vessel continues to produce precursor vapors that can deposit thereon. Temperature skew can solve this problem. However, the need for additional heaters increases the total size and operating cost of the device.

In addition, in order to prevent solid precursor particles (eg, powders accompanying the carrier gas flow) from entering the reaction chamber, conventional solid source delivery systems typically have a filter (purifier of FIG. 1) between the source vessel outlet and the substrate reaction chamber. (28) and the like). These filters increase the overall size of the device and require additional heaters to prevent condensation on the filters. Also, such a filter is typically downstream of the source vessel outlet, which carries the risk that precursor particles will deposit on the gas delivery component downstream of the vessel outlet, such as in the gas conduit or in the vessel outlet valve itself. These particles can damage components such as valves and impair the ability to seal completely.

Another disadvantage of conventional solid or liquid source delivery systems is that it is often difficult to refill or replace the precursor source container. 2 shows a typical precursor source container 31 comprising a container body 33 and a lid 35. The lid 35 comprises inlet tubes 43a and 43b and outlet tubes 45a and 45b extending upwards therefrom. The shutoff valve 37 is located between the inlet tubes 43a and 43b, and the shutoff valve 39 is located between the outlet tubes 45a and 45b. Another shutoff valve 41 is located between the gas lines connecting the inlet tube 43a and the outlet tube 45a. The inlet tubes 43a and 43b and the outlet tubes 45a and 45b provide a flow of inert carrier gas through the container body 33. Tubes 43a and 45a typically include an accessory 47 configured to be connected to another gas flow line of a reactant gas delivery system. If the solid or liquid source precursor is depleted and needs to be replaced, it is common to replace the entire source vessel 31 with a new one filled with the source chemical. To replace the source vessel 31, close the shutoff valves 37 and 39, disconnect the accessory 47 from the rest of the substrate processing apparatus, physically remove the vessel 31, and replace the new vessel 31 with an appropriate one. Located in position, it is necessary to connect the accessory 47 of the new container 31 to the remaining substrate processing apparatus. Often, this process may involve disassembling various thermocouples, line heaters, clamps, and the like. This process can be quite difficult.

Another problem with conventional solid or liquid source delivery systems is that gas delivery systems may create stagnant flow zones (also called dead legs). Dead legs tend to occur when the gas flow passages from the precursor source vessels are longer or more complex. Conventional source vessel inlet and outlet shutoff valves (as described above) can form dead legs. In general, dead legs increase the risk of undesired precursor deposition on gas delivery components of a delivery system. Such unwanted precursor deposition can occur due to cold spots associated with dead volume, and the precursor solidifies at temperatures below the sublimation / melting temperature. Such unwanted precursor deposition can occur due to hot spots associated with dead volumes, and the precursors decompose at high temperatures. For this reason, it is generally desirable to reduce and minimize stagnation of reactant gas flow. It is also desirable to reduce the surface area to be temperature controlled in order to reduce the likelihood of hot or cold areas occurring.

Another reason to minimize the amount and volume of dead legs is to reduce the overall volume of the gas delivery system located between the precursor source vessel and the substrate reaction chamber. Increasing the total volume of a gas delivery system often increases the minimum pulse time and minimum purge time associated with ALD processing. The minimum pulse time is the pulse time required for the injected reactant to saturate the surface of the substrate being processed. The minimum purge time is the time required to purge excess reactant from the substrate reaction chamber and the gas delivery system between reactant pulses. As the minimum pulse time and minimum purge time decrease, the substrate throughput (speed at which the substrate can be processed) increases. Therefore, it is desirable to reduce the amount and volume of dead legs in order to increase throughput.

Another advantage of reducing the overall volume of the gas delivery system is that it improves the "pulse form" of the reactant gas pulses. By pulse form is meant the form of the chemical concentration curve of the reactant in the reactant / carrier mixture, relative to the reactant gas pulse. 3 shows examples of ideal reactant concentration curves 80 and less ideal curves 82. Both curves include reactant gas pulses 84 separated by a time 86 of substantially zero reactant concentration. The ideal curve 80 is similar to a rectilinear waveform, such as a square wave. Substantially linear waves are preferred, in order to optimize substrate throughput, it is highly desirable that each reactant gas pulse carries reactant species at all possible reaction sites on the substrate surface (saturation) in a minimum amount of time. Because. As with curve 80, the straight pulse shape optimizes throughput because each pulse duration has a high reactant concentration, which reduces the pulse duration needed to transport sufficient reactant species to the substrate surface. In addition, reducing the dispersion of the straight pulse form reduces the amount of "pulse overlap" between successive pulses of different precursors, which reduces the potential of unwanted CVD growth modes. Conversely, the pulse concentration of each pulse 84 of the non-ideal curve 82 takes longer to reach the highest level, which increases the pulse duration required to completely saturate the substrate surface. Therefore, the frequency of the curve 80 is smaller than the frequency of the curve 82. As the overall volume of the gas delivery system increases, the pulse shape worsens. Thus, by minimizing dead legs, it is desirable to improve the pulse shape (ie, to make it more like a rectangular wave).

Another disadvantage of conventional solid source delivery systems is the risk of contamination associated with venting of precursor source vessels prior to processing. The precursor source vessel is typically supplied with the head pressure of the gas in the vessel. For example, a source container filled with precursor powder is shipped with helium or other inert gas at a pressure slightly higher than ambient pressure (eg, 5 psi). Typically, helium is used to enable "out-bound" helium leak testing using a helium leak detector to ensure container integrity immediately prior to shipping. This helium often remains, or is replaced by N ₂ or other inert gas, and if there is a small leak, this gas can leak out of the vessel to prevent air pollution of the precursors in the vessel. Before the vessel is used for substrate processing, the head pressure of the internal gas is usually removed. Typically, the internal gas of the vessel is evacuated through the outlet shutoff valve of the vessel, through the reactant gas delivery system, and finally through the exhaust / scrubber of the reactor. In some systems, the gas inside the vessel is exhausted through the substrate reaction chamber. Another system employs a gas line parallel to the reaction chamber (i.e., extending from a point immediately upstream of the reaction chamber to a point immediately downstream of the reaction chamber) such that the gas inside the vessel is exhausted without flow through the reaction chamber. Can be headed to a scrubber. In some cases, there is a risk of particles being produced in current vessel designs when the vessel is released at head pressure. This may cause precursor powder to accompany the exhaust flow (ie, exhaust from the pressurized internal gas of the vessel) to contaminate and damage downstream components of the gas delivery system, including the vessel outlet itself. Even during normal processing, precursor material (eg, powder) may be entrained in the carrier gas flowing through the precursor source vessel, which includes the possibility of undesired deposition of the precursor in the gas delivery system.

Embodiments disclosed herein with respect to precursor delivery systems substantially overcome this problem by employing improved precursor source vessels and devices that quickly connect and disconnect vessels with the rest of the delivery system. This embodiment is described below.

4 to 6 show three different gas panel configurations. The gas panel typically includes one or more valves downstream of the precursor source vessel, and may also include one or more valves upstream of the vessel. 4 shows a conventional configuration in which the source chemical is contained in the source container 10. The gas panel 90 includes a plurality of valves operable to deliver carrier gas from a carrier gas source (not shown) through the vessel 10 and into the reaction chamber (not shown). Inlet valve 91 is connected upstream of vessel 10 by tubing 93, and outlet valve 92 is connected downstream of vessel 10 by tubing 94. In this conventional configuration, the inlet valve 91, the outlet valve 92, and the valves and tubing of the gas panel 90 are typically not in close thermal contact with the vessel 10.

5 is a view showing a somewhat improved configuration compared to the configuration of FIG. In the configuration of FIG. 5, precursor source vessel 100 has a surface mount inlet valve 108 and a surface mount outlet valve 110. Valves 108 and 110 are separated from conventional gas panel 90 by tubing 95 and 96. In this configuration, valves 108 and 110 are in close thermal contact with vessel 100, while the valves and tubing of gas panel 90 are not.

6 is a view showing an improved configuration compared to the configuration of FIG. In the configuration of FIG. 6, the source vessel 100 has a generally flat top surface having a surface mounted inlet valve 108 and a surface mounted outlet valve 110. In addition, the gas panel 97 is configured such that the valves and tubing of the gas panel are positioned along a plane generally parallel to the generally flat surface of the vessel 100. In order to increase the thermal contact between the vessel 100 and the gas panel valve and the tubing, the distance between the face of the gas panel valve and the tubing and the generally flat surface of the vessel 100 is preferably less than about 10.0 cm, more preferably Is less than about 7.5 cm, even more preferably less than about 5.3 cm.

Sauce Vessel with Surface Mount Valve and Sanding Path

FIG. 7 shows an embodiment of an improved solid or liquid precursor source vessel 100 and quick connect assembly 102. The source container 100 includes a container body 104 and a lid 106. The lid 106 includes surface mount shutoff valves 108 and 110, which are described in more detail below.

8 to 10 are very detailed views of the source container 100 of FIG. 8 is an exploded view of the source container 100, and FIGS. 9 and 10 are rear cross-sectional views of the source container 100. The container 100 shown includes a container body 104, a death path insert 112 in the body 104, and a lid component 106. The assembly shown is fastened together by fastening elements 124 such as screws or nut and bolt combinations. The fastening element 124 extends into the aligned holes in the flange 126 of the body 104. Those skilled in the art will appreciate that the assemblies can be fastened together by various alternative methods.

The death path insert 112 preferably defines a curved or death path 111 and must travel through this path as the carrier gas flows through the vessel 100. The death path 112 preferably contains a precursor source such as a powder or a liquid. The death path 111 is much longer than the carrier gas flow path in a conventional precursor source vessel. Valves 108 and 110 (described below) and valve 210 (described below with reference to FIGS. 26-28) suffer from a less severe environment, thereby increasing their reliability.

A spring is preferably provided to bias the sand insert 112 relative to the lid 106 to prevent escape of reactant gas through the interface between the insert 112 and the lid 106. In other words, the spring 114 tends to reduce the risk that the gas will bypass all or part of the death path. Suitable springs 114 include flat wire compression springs, such as Spirawave® wave springs sold by Smalley Steel Ring of Lake Zurich, IL.

11A shows another embodiment of an improved solid or liquid precursor source vessel 400 that includes a container base 402, a seal 404, and a lid 406. Lid 406 includes a plurality of integral gas valves, or surface mount valves, which are described in more detail below. 11B-11C show representative embodiments of the lid 406. 11D-11G illustrate one embodiment of a base 402 of a source vessel 400. 11H-11I illustrate another embodiment of the base 402 of the source container 400.

As shown in FIG. 11A, the base 402 is in the form of a solid member that includes a concave region 408 that is machined directly into the solid base 402. When the lid 406 is removably attached to the base 402, the seal 404 is secured with the lid before the lid 406 is secured to the base 402 to ensure the contents in the source container 400. It is located between the bases. In one embodiment, the base 402 and the lid 406 are formed of the same material such that both members have substantially the same thermal conductivity and the same coefficient of thermal expansion between them. In another embodiment, the base 402 is formed of a material different from the material used to form the lid 406. In one embodiment, the base 402 and the lid 406 are formed of stainless steel. In other embodiments, the base 402 and / or lid 406 may be formed of high nickel alloys, aluminum or titanium. Those skilled in the art will appreciate that sufficient thermal is required to evaporate the precursor placed in the source vessel 400 while the base 402 and the lid 406 do not react with the contents or precursor in the source vessel 400 or are inactive. It should be understood that it may be formed of any other material sufficient to allow heat transfer.

The seal 404 is placed between the base 402 and the lid 406 of the source container 400, as shown in FIG. 11A. In one embodiment, the seal 404 is an o-ring that lies within the groove 410 formed in the base 402. In other embodiments, the seal 404 may be formed of a v-seal or metal gasket configured to lie between the base 402 and the lid 406. Those skilled in the art will appreciate that the seal 404 may be any shape sufficient to provide a seal when the lid 406 is attached to the base 402 and to ensure that the contents within the source container 400 are secured therein, It should be understood that they may be formed in size or configuration. In an embodiment, the seal 404 is formed of an elastomer, but one of ordinary skill in the art should understand that the seal 404 may be formed of any other material sufficient to provide a seal, such as but not limited to a polymer or metal. do.

As shown in FIGS. 11A-11C, one embodiment of a lid 406 of a source container 400 is shown. The lid 406 is formed as a single member having an upper surface 412, a lower surface 414, and a side 413 extending between the upper and lower surfaces 412, 414. In one embodiment, the top and bottom surfaces 412, 414 are substantially flat surfaces. Those skilled in the art should appreciate that the flat upper and lower surfaces 412, 414 may further include marks, grooves, gaps or inset portions formed therein. In one embodiment, the upper and lower surfaces 412, 414 are substantially parallel to each other, thereby providing the lid 406 with a constant thickness T ₁ over the entire lid 406. As shown in FIG. 11B, the top surface 412 can include a high tolerance zone 416 that is machined to provide a substantially smooth area relative to the rest of the top surface 412. This high tolerance zone 416 allows the valve assembly 418 to be mounted flush with the top surface 412 of the lid 406 to ensure a lot of direct thermal contact between the valve assembly 418 and the lid 406. Makes it possible. By more surface area contact between these components, heat transfer between these components can be maximized, thereby providing heat to the valve assembly 418 that prevents condensation of the vaporized precursor between them. Reduces the need for a separate heater or thermal jacket.

As shown in FIG. 11B, the lid 406 includes an inlet port 420, an outlet port 422, and a buff port 424. Inlet port 420 is configured such that a carrier gas or an inert gas can be introduced into source vessel 400 through the port. The outlet port 422 is configured to allow gas to exit the source vessel 400 through the port. Buff port 424 may include any port, such as a conventional inlet / outlet port, which port may be after initial filling and installation of source vessel 400, or subsequent refilling of source vessel 400 and It may be configured to relieve head pressure in the source vessel 400 after installation. Reduction of head pressure through the buff pot 424 occurs before the source vessel 400 provides the vaporized precursor material to the reaction chamber 162 (FIG. 25) for semiconductor substrate processing. In one embodiment, interface component 426 is operatively attached to the top surface 412 of the lid 406 at each port 420, 422, 424. Each interface component 426 is configured to be connected to the valve assembly 418. Those skilled in the art should understand that each valve assembly 418 and interface component 426 can be operatively connected to the top surface 412 of the lid 406 in any manner.

As shown in FIGS. 11A and 11C, one of the valve assemblies 418 includes an exhaust valve, or buff valve 428, operatively connected to the upper surface 412 of the lid 406. Buff valve 428 may be a pneumatic valve, or any valve that regulates gas flow into and out of source vessel 400. In one embodiment, the buff valve 428 is opened except to release the gas to relieve head pressure inside the source vessel 400 prior to use of the source vessel 400 in the semiconductor processing system. It stays closed. During manufacture and during initial charging of the precursor to the source vessel 400, or after the precursor is refilled into the source vessel 400, an inert gas is introduced into the source vessel 400 to generate head pressure within the source vessel 400. do. This head pressure is used to perform a leak check once the source vessel 400 is filled (or refilled) as described above. Once the source vessel 400 is installed, the gas in the source vessel 400 that generates head pressure needs to be removed and replaced with an inert gas used to carry the vaporized precursor during processing. Conventionally, the head pressure has been reduced by discharging gas from the known source vessel through the same outlet port through which the vaporized precursor material escapes during processing of the substrate through the same outlet port. However, the filter adjacent to the outlet port can often be clogged by precursor particles accompanying the gas during the initial "buff" process or discharge. Although some of the precursor particles are stopped by the outlet filter, some particles may bypass the filter, or the particles trapped in the filter may be removed into the tubing leading to the reaction chamber. Such errant precursor particles may cause heterogeneous deposition in the reaction chamber or clogging of the gas line between the source vessel and the reaction chamber. Wandering particles cause particle entrainment on the semiconductor substrate to be processed, reducing the number of devices, chips or circuits the substrate can manufacture. According to the buff port 424 and corresponding buff valve 428 of the present invention, a buff gas line 432 in which gas and particles exiting the buff port 424 are directly connected to the exhaust line 466 (FIG. 25). The head pressure may be reduced during the "buff" process, which is first filtered by the buff filter 430 before it is switched over, thereby causing the reaction chamber 162 to not interfere with the processing in the reaction chamber 162. To bypass.

As shown in FIG. 11C, the filtration device 434 is operatively connected to the bottom surface 414 of the lid 406. As described in greater detail in FIG. 18 and below, the filtration device 434 includes a carrier gas introduced into the source vessel 400 through the lid 406, and a source through the buff port 424 and the outlet port 422. And to filter the gas exiting the vessel 400. In the illustrated embodiment, the filtration device 434 is attached to the underside of the lid 406 adjacent the inlet port 420, the outlet port 422, and the buff port 424. The filtration device 434 is attached directly to the lid 406 to enable a sufficient amount of heat transfer from the lid 406 to prevent condensation of the precursor material within each filtration device 434. Since the low-profile filtration device provides good thermal uniformity across the filter pack media (FIG. 17), each filtration device 434 preferably has a low profile.

An embodiment of the base 402 is shown in FIGS. 11E-11G. The base 402 includes a body 436 and a flange 438 extending integrally connected to the body 436. In one embodiment, the body 436 and the flange 438 are formed from a single piece of material. As described above, a groove 410 is formed in the body 436, and the groove 410 is configured to receive the seal 404. The flange 438 is configured to extend radially outward from the upper portion of the body 436. The base 402 is defined by the upper contact surface 440, the bottom surface 442, the side surface 444, and the inner surface 446 forming the recessed area 408. Contact surface 440 is a substantially planar surface that forms the entire top surface of base 402. The contact surface 440 is configured to be in direct contact with the lower surface 414 of the lid 406.

In one embodiment, the base 402 is a solid material or metal, as shown in FIGS. 11D-11G, in which the recessed areas 408 are machined or removed. In another embodiment, the base 402 is formed as a single casting in which recessed areas 408 are formed in the base 402 during the casting or forging process. Concave region 408 is formed to receive a solid or liquid precursor therein. In the embodiment shown in FIGS. 11D-11I, the concave region 408 is formed as an elongated curved path from the contact surface 440 of the base 402. The inner surface 446 extends from the contact surface 440 into the thickness of the body 436. The depth of the concave region 408 formed in the body 436 can vary. In order to increase the time for the gas to stay with the precursor material disposed in the concave region 408, the concave region 408 provides an extended flow path between the inlet port 420 and the outlet port 422. Those skilled in the art should understand that the shape, depth, and width of 408 may vary.

As shown in FIGS. 11E-11G, in one embodiment, the recessed regions 408 include an inlet recessed pad 448, an outlet recessed pad 450, a buff recessed pad 452 and the recessed pad 448. And a channel 454 in fluid connection with the 450, 452. Concave pads 448, 450, 452 are generally triangular shaped concave regions extending downward from the contact surface 440 of the base 402. The shape of the concave pads 448, 450, 452 is corresponding to extending from the lower surface 414 of the lid 406 such that a portion of each filtration device 434 is received within the corresponding concave pads 448, 450, 452. Substantially the same shape and size as the portion of the filtration device 434. Concave pads 448, 450, 452 extend downward from contact surface 440 by a predetermined depth. In one embodiment, the depths of all the concave pads 448, 450, 452 are the same. In other embodiments, the depth of at least one of the recessed pads 448, 450, 452 is different from the depth of the remaining recessed pads. When the base 402 is filled with the precursor, the volume within each concave pad 448, 450, 452 is not filled with the precursor. When the carrier gas is introduced into the base 402 through the filtration device 434 adjacent the inlet port 420 of the lid 406, the carrier gas enters the inlet concave pad 448 before moving the rest of the concave region 408. ) Is distributed in the concave pad. Since the precursor is preferably not located inside any of the concave pads 448, 450, 452, introduction of the carrier gas into the inlet concave pad 448 causes the carrier gas to be in direct contact with the precursor to agitate the precursor or Prevents particles from mixing with the carrier gas. Each of the concave pads 448, 450, 452 of the concave region 408 is fluidly connected by a panel 454 formed in the body 436.

As shown in FIGS. 11F-11G, the channel 454 of the concave region 408 extends from the contact surface 440, and the channel 454 is a continuous path, so that gas can enter the inlet concave pad 448. ) And the exit concave pad 450 can be moved. In another embodiment, the concave region 408 does not include concave pads such that the channel 454 is adjacent to the inlet port 420 and the filtration device adjacent to the outlet and buff ports 422, 424. 434) extends the entire distance therebetween. Channel 454 is formed into body 436 such that channel 454 has a depth greater than the depth of concave pads 448, 450, 452. In one embodiment, the depth of the channel 454 is constant along the entire length of the channel 454 between the inlet concave pad 448 and the outlet concave pad 450. In another embodiment, the depth of the channel 454 varies along the length of the channel 454 between the inlet recessed pad 448 and the outlet recessed pad 450.

When the source vessel 400 is filled with a liquid or solid precursor material (not shown), the precursor material is preferably disposed only in the channel 454 of the recessed region 408 formed in the body 436. To prevent the precursor material from being disposed in the recessed pads 448, 450, 452, the channel 454 must be filled to a depth below the bottom of the recessed pads 448, 450, 452. Also, the bottom of the outlet concave pad 450 is located above the top surface of the precursor material so that precursor material particles remain in the channel 454.

In the embodiment of the base 402 shown in FIG. 11E, the channel 454 extends between the inlet concave pad 448 and the outlet concave pad 450 and has a tetragonal shape. Channel 454 forms a curved path between inlet and outlet ports 420 and 422 through which carrier gas can travel. In other words, the channel 454 between the inlet and outlet concave pads 448 and 450 is non-linear between the inlet and outlet ports 420 and 422. In the embodiment shown in FIGS. 11E-11G, the channel 454 includes a plurality of linear portions 456. In addition, at least two adjacent linear portions 456 are substantially parallel to each other. The channel 454 has a width. In one embodiment, the channel 454 has a constant width along its entire length. In another embodiment, the width of the channel 454 varies along its length. The serpentine shape of the channel 454 maximizes the amount of time and distance that the carrier gas introduced into the source vessel 400 contacts the precursor material disposed within the recessed region 408.

 In another embodiment of the base 402 of the source vessel 400, as shown in FIG. 11H, the channel 454 extends and is in fluid communication between the inlet recess pad 448 and the outlet recess pad 450. Channel 454 includes a plurality of arc portions 458. In one embodiment, the channel 454 includes at least two arc shaped portions 458 that are substantially concentric with each other. In another embodiment, the channel 454 has a plurality of arc portions 458, but no linear portion 456. In another embodiment (not shown) of the base 402, the channel 454 is completely random extending between the inlet recessed pad 448 and the outlet recessed pad 450 or between the inlet and outlet ports 420, 422. Winding path.

FIG. 11H illustrates one embodiment of a base 402 that further includes a heating assembly 460 disposed within the base 402. In one embodiment, the heating assembly 460 is integrated into the wall of the base 402 between the side and bottom surfaces 444, 442 and the inner surface 446. Heating assembly 460 is configured to provide heat directly to base 402 to evaporate precursor material 464 disposed within the base. In one embodiment, the heating assembly 460 may be a wire heater integrally formed within the base, or any other form of heating mechanism sufficient to provide heat directly to the base 402 while being integrated therein. In another embodiment, the heating assembly 460 may be a resistive element mounted within the base 402. In yet another embodiment, the heating assembly 460 may be a thin film foil heating element embedded in the base 402. It should be understood by those skilled in the art that the heating assembly 460 can include any heating means that directly heats the body 436 of the base 402 to provide sufficient heat to evaporate the precursor material 464.

In another embodiment of the base 402 of the source vessel 400, as shown in FIG. 11J, the recessed region 408 provides a generally hollow volume within the base 402 to receive the precursor material. 402 is formed. Although the embodiment shown in FIG. 11J does not include a channel or curved path similar to the previous embodiment, the concave region 408 extends within the base 402 between the inlet and outlet ports 420, 422. Provide a nonlinear passage.

When the source container 400 is assembled, the lid 406 is removably attached to the base 402 with a seal 404 disposed between the lid and the base. When the lid 406 is attached to the base 402, an internal volume 468 is formed between the inner surface 446, which forms the concave region 408 in the base 402, and the lower surface 414 of the lid 406. It is prescribed. As shown in FIG. 11B, the lid 406 includes a plurality of holes 462 formed through the entire thickness T ₁ . A hole 462 formed through the lid 406 is located adjacent to the outer edge of the lid 406. As shown in FIG. 11D, the base 402 also includes a plurality of holes 462 formed through the entire thickness of the flange 438. The lid 406 is aligned with the base 402 such that each filtration device 434 attached to the lid 406 is received in the corresponding concave pads 448, 450, 452 of the base 402. Seal 404 is disposed within groove 410 formed in base 402. When the lid 406 and the base 402 are aligned, the hole 462 formed in the lid 406 is likewise aligned with the hole 462 formed in the base 402. A connecting member (not shown) is inserted through each pair of base 402 and corresponding holes 462 of the lid 406 so that the lid 406 is removably sealed to the base 402. Those skilled in the art should understand that any type of connecting member may be used to removably attach the lid 406 to the base 402, including but not limited to screws, bolts or clamps. When fully assembled, the bottom surface 414 of the lid 406 is in contact with the contact surface 440 of the base 402. Contact between the lid 406 and the contact surface 440 of the base 402 provides direct heat transfer between the lid 406 and a portion of the body 436 immediately adjacent the recessed area 408, thereby providing a base ( Heat is transferred through 402 to the precursor material disposed in the interior volume 468. The lower surface 414 of the lid 406 and the contact surface 440 of the base 402 are both substantially flat so that when these surfaces 414, 440 contact each other, the lid 406 and the base 402 Adjacent relationship between provides a seal between adjacent portions of channel 454 such that carrier gas and evaporated precursor material do not bypass portions of channel 454 by passing between lid 406 and base 402. It should be understood by those skilled in the art that FIG. 11E and FIG. 11I are to be understood.

In the operation of processing the semiconductor substrate in the reaction chamber 162 (FIG. 25), carrier gas is introduced into the source vessel 400 through an inlet port 420 in the lid 406. Precursor material 464 is disposed in source vessel 400, which is heated and thereby vaporizes the precursor material. The carrier gas then passes through a filtration device 434 located adjacent to the inlet port 420 and then to the inner surface 446 that forms the recessed area 408 and the lower surface 414 of the lid 406. It enters into the interior volume 468 of the base 402 defined by it. When entering the interior volume 468, the carrier gas enters the inlet concave pad 448 and is then dispersed through the channel 454. As the carrier gas moves through the interior volume 468, the carrier gas is mixed with the evaporated precursor material 464 (FIG. 11H) to form a gas mixture saturated with the evaporated precursor material. The longer the residence time the carrier gas remains in the interior volume 468, the more saturated the carrier gas is with the evaporated precursor material. There is a restriction on the level of saturation of the carrier gas by the evaporated precursor material, and the length of the passage in the inner volume 468 between the inlet and outlet ports 420 and 422 is optimized to maximize the amount of saturation of the carrier gas. Should be understood. This gas mixture eventually exits the interior volume 468 by passing through a filtration device 434 operatively connected to the lid 406 and located adjacent to the outlet port 422. After passing through filtration device 434, the gas mixture exits source vessel 400 through outlet port 422 and exits to outlet gas line 470 (FIG. 25) in fluid communication with reaction chamber 162. do.

In the buffing process, the gas (s) of the internal volume 468 of the source vessel 400 are removed, which creates an internal head pressure that is added after the initial filling or refilling of the source vessel 400. In the buff process, as shown in the schematic diagram of FIG. 25, the buff valve 428 is opened such that gas in the source vessel 400 exits the interior volume 468 through the buff port 424. The head pressure gas passes through a buff filter 430 operatively connected to a lid 406 adjacent to the buff port 424. After passing through the buff filter 430, the head pressure gas exits the source vessel 400 through the buff port 424, bypasses the reaction chamber 162, and the discharge from the reaction chamber 162 flows. And into a buffer gas line 432 that is fluidly and operatively connected to the exhaust line 466. Once the gas that has formed the initial head pressure exits the source vessel 400 to equalize the pressure in the source vessel 400, a filtration device 434 attached to the lid 406 positioned adjacent the inlet port 420. Carrier gas is then supplied into the interior volume 468 of the base 402 to fill the recessed area 408 with the carrier gas to a predetermined operating pressure.

In another alternative embodiment shown in FIGS. 12-16, the sand insert 112 includes a plurality of stacking trays that collectively define the sand gas flow passage. For example, in FIG. 12, which collectively defines a helical gas flow path that is configured to be removably inserted into the container body 104 (FIGS. 7-10) and that includes at least a portion of the curved path of the container 100. A number of stacked trays 230, 240 are shown. 12-16, the heights of the trays 230, 240 have been greatly expanded to facilitate the description. It should be understood that the tray can be formed thinner in the vertical direction, such that the container 100 has a diameter that is considerably larger than its overall height.

In the illustrated embodiment, four trays, that is, three upper trays 230 and one lower tray 240 are stacked. The number of trays may vary based on parameters such as sublimation rate, carrier flow, and the like.

Referring to FIGS. 13 and 14, each of the upper trays 230 includes a solids separator 231 that prevents flowing gas flow and also extends over the entire height of the tray 230, and permits flowing gas flow. Partial separator 232. Preferably, the partial separator includes a screen 233 formed to retain large precursor particles while allowing free gas flow through. In the illustrated embodiment, the screen 233 extends across the top of the partial separator 232 while the solids panel is completed over the height of the partial separator 232. An annular rim 234 also extends over the height of the top tray 230. The solid separator 231 and the partial separator 232 together define a main compartment 235 holding a solid source material (not shown) and an outer channel compartment 236 that opens at the bottom surface of the tray 230. The top tray 230 shown includes a center core 237 that includes a center channel 238 to receive a gas inlet pipe that delivers carrier gas to the bottom tray 240. The top tray 230 shown also has a plurality of pegs 239 on the top surface and corresponding multiple holes (not shown) on the bottom surface for receiving the pegs of the other tray below. As will be better understood from an operational point of view described below, the holes on the lower surface of the central core 237 are preferably offset in the rotational direction with respect to the peg 239 on the upper surface, thereby defining a plurality of trays to define the ventilation flow passages. Contributes to proper alignment up and down. In certain preferred embodiments, the corners of the main compartment where the flow is exposed are rounded to minimize flow stagnation from sharply angled corners.

Referring to FIGS. 15 and 16, the lowermost tray 240 prevents gas flow from flowing through and also allows a solids separator 241 to extend over the entire height of the tray 240 and to allow flowing gas flow therethrough. Partial separator 242. Preferably, the partial separator 242 simply provides an opening to the center channel 238 in the middle of the overlapping top tray 230, as better understood in the description of FIG. 12. An annular rim 244 also extends over the height of the lower tray 240. Rim 244, solids separator 241, and partial separators 242 together define a main compartment 245 and an outer channel compartment 246 that hold a solid source material (not shown). In a preferred embodiment, the solid source material fills the main compartment 245 up to the channel compartment 246. In an alternative embodiment, the solid source material fills 1/3 to 2/3 of the main compartment height. The lower tray 240 shown is also from the center core 247 through which the channel compartment 246 protrudes, a number of pegs 249 on the upper surface, and the floor of the container body 104 (FIGS. 7-10). It has a corresponding number of holes (not shown) on the bottom surface for receiving the upwardly protruding peg.

The stack of trays 230, 240 is assembled as shown in the exploded view of FIG. 12. Main compartments 235 and 245 for each of upper tray 230 and lower tray 240 are loaded with precursor source chemicals, preferably in powder form. The lower tray 240 and the plurality of upper trays 230 are stacked up and down and are also loaded into the outer container body 104. The trays 230, 240 preferably have channel compartments 236 of the overlapping top tray 230 after flowing at least 200 ° to 355 ° of lap around the main compartment so that gas flows into each tray. ) Are aligned by peg 239, 249 and corresponding holes. The vessel lid 106 (FIGS. 7 and 8) is then closed and sealed over the vessel body 104, with the center pipe 215 extending from the lid through the center channel 238 of the top tray 230. It extends downwards and opens into the channel compartment 246 of the lower tray 240. In FIG. 12 the center pipe 215 is shown but the lid 106 is not shown. The center pipe 215 is formed to deliver the carrier gas carried into the inlet of the container 100. In certain preferred embodiments, springs or other biasing devices (not shown) are often placed below 240 so as to bias all trays together, preventing leakage from the central core to other levels.

In operation, the inert gas is preferably delivered to the stack of trays 230, 240 and also along each elongated draft flow path in a horizontal direction, preferably prior to exiting the tray in a vertical direction. 240 passes through an arc of about 200 ° to 350 ° of the main compartment. In the illustrated embodiment, the inert carrier gas extends downward through the aligned center channel 238 of the upper tray 230 to open into the channel compartment 246 of the lower tray 240. Is provided through This inert gas blows through the precursor source chemistry of the main compartment 245 until it encounters an opening in the bottom surface of the overlapping top tray 230. This opening allows the carrier gas and the evaporated precursor that carries it to pass into the channel compartment 236 of the top tray 230, from which gas passes through the screen 233 (FIG. 13) to the main compartment 235. You go inside. This gas is blown in the main compartment 235 through a solid precursor, preferably through an arc of about 200 ° to 350 ° before encountering an opening in the lower surface, such as the overlapping top tray 230. In the top tray 230, this gas exits the container 100, preferably via a surface mount outlet valve 110 (described below) in the container lid 106. Of course, it will be appreciated that the flow path can be reversed if desired. That is, the inert carrier gas can flow downward through the stack of trays starting at the top tray.

Referring back to FIGS. 8-10, in the illustrated embodiment, the container lid 106 includes an inlet valve 108 and an outlet valve 110. Inlet valve 108 has an inlet end for receiving carrier gas through conduit 121. This conduit 121 has an accessory 122 suitable for connection of the gas line 133 of the gas interface assembly 180 (described below) to the accessory 131 (FIG. 7). The inlet valve 108 also has an outlet end, which is preferably in fluid communication with the first portion 117 (end, etc.) of the dead path 111 of the insert 112. The outlet valve 110 is in fluid communication with a suitable gas outlet of a lid 106, such as an orifice 128, with an inlet end, which is preferably in fluid communication with a second portion 119 (such as an end) of the dead path 111. Has an outflow end. In use, the carrier gas flows into the conduit 121 and also through the inlet valve 108, the death path 111, and the outlet valve 110 before exiting the orifice 128.

Thus, the results achievable by the above embodiments include mounting a shutoff valve on the surface of the lid 106 and flowing the carrier gas along a curved or sanded path while being exposed to the precursor source. Those skilled in the art will appreciate that the container 100 can be formed differently.

As mentioned above, conventional solid or liquid precursor source vessels include discontinuous tubes extending from the vessel body or lid, and valves are attached in series with these tubes. For example, the conventional container 31 of FIG. 2 includes discontinuous tubes 43b, 45b extending upward from the lid 35, and valves 37 and 39 are attached to these tubes. The valves 37 and 39 of the container 37 are not directly attached or contacted with the lid 35. As a result, the reactant gas from the vessel 31 flows from the outlet tube 45b into the outlet valve 39, which may involve a flow path having a stagnant or dead gas volume. And the shutoff valves 37, 39, and 41 of the conventional container 31 are considerably thermally disconnected from the container lid 35 and the body 33. Tubing and valves, with or without dead bodies or "dead legs", are very difficult to heat effectively with three-dimensional geometry. Since the valve has a smaller thermal mass than the lid 35 and the body 33, it tends to heat up and cool down quickly. Because in conventional systems, additional heaters (line heaters, cartridge heaters, directed heat lamps, etc.) are used to provide heat to the valves and associated tubing, especially during system cooling, such that these components are more suitable than vessels 31. This is because it prevents the rapid cooling (reactant vapor can flow into these components and cause unwanted conditions to deposit). Another problem with conventional valves and tubing is that it can heat up faster than valve 31. For some precursors, this may result in the valve and tubing being warmer than the precursor's decomposition temperature, causing the precursor to degrade and deposit.

In contrast, the shutoff valves 108 and 110 (FIGS. 7-10) of the source vessel 100 are preferably mounted directly to the surface of the lid 106 of the vessel 100. This surface mounting technique may also be called an integrated gas system. Compared to conventional precursor source vessels (eg, FIG. 2), surface mount valves 108 and 110 remove the volume of dead legs (react reactant gas flow) in the gas delivery system by removing tubing between valve and vessel 100. Can be reduced, which simplifies and shortens the path of movement of the reactant gas. Valves and tubing can handle heating even better due to the compressible geometry and improved thermal contact which reduces the temperature gradient. Surface-mounted valves 108 and 110 described are valve pottings, which preferably include an adjustable flow restrictor (eg, diaphragm) for selectively controlling the gas flow through the valve seat and the valve seat. Have valve porting blocks 118 and 120. These valves 108 and 110 isolate the vessel 100 by limiting all gas flow through the valve seat. The potting blocks 118, 120 may be integrally formed with the container lid 106 or may be separately formed and mounted to the container lid 106. In either case, the potting blocks 118, 120 preferably have a relatively high degree of thermal contact with the container lid 106. This allows the temperature of the valves 108 and 110 to be maintained near the temperature of the lid 106 and the container body 104 during the temperature change of the container 100. This surface mount valve structure can reduce the total number of heaters required to prevent condensation of the vaporized precursor gas. When the vessel 100 exceeds the evaporation temperature of the precursor source chemical, the evaporated precursor can flow freely to the valves 108 and 110. Since the valves 108 and 110 closely follow the temperature of the vessel 100 during temperature ramping, the valve likewise exceeds the evaporation temperature, thus requiring a need for an additional heater to prevent condensation of the precursor in the valve. Will be reduced. Shortened gas flow paths are also more suitable for controlled heating. Surface mount valves 108 and 110 also have much smaller packaging space requirements.

In another embodiment, the valving of the potting blocks 118, 120 (see FIG. 8) may be integrally formed on the lid 406 of the source vessel 400, whereby, as shown in FIG. 11J, the inlet valve ( 108, the buff valve 428 and the outlet valve 110 are mounted flush with the upper surface 412 of the lid 406, as well as the buff valve 428, as well as the inlet and outlet valves 108, 110. 406 can be attached directly. Mounting the valve directly on the same plane as the top surface 412 of the lid 406 increases the heat transfer as well as reducing the distance therebetween, and the inert gas and evaporated precursor mixture is applied to the base 402. Is moved from the internal volume 468 of the reaction chamber (162, see FIG. 25).

Each valve 108 and 110 preferably includes a valve potting block that includes a gas flow passage that can be opened or restricted by the valve. For example, with reference to FIGS. 9 and 10, the potting block 118 of the valve 108 preferably extends from the conduit 121 through one side 123 of the potting block 118 to the region 113. An internal gas flow passage. Region 113 preferably includes an internal device (not shown) for restricting the flow of gas, such as a valve seat and a movable restrictor or diaphragm. In one embodiment, the movable internal limiter or diaphragm can be moved by rotating the knob (eg, the larger cylindrical top 181 of the valve 108) manually or automatically. The other internal gas flow passage preferably extends from the region 113 through the opposite side 125 of the block 118 to the inlet passage extending through the lid 106 into the vessel 100. For example, the inlet passage may extend into the curved path 111 defined by the sand insert 112. The valve 110 and the exhaust valve 210 (described below with reference to FIGS. 26-28) can be configured similarly to the valve 108. In one embodiment, the valves 108 and 110 are pneumatic valves. It is particularly preferred to form the valve potting blocks 118 and 120 integrally with the container lid 106. This eliminates the need for a separate seal between the block and the container lid.

In other embodiments, the valves 108, 110 and 210, FIGS. 26-28 are formed without potting blocks such as potting blocks 118, 120, and preferably of vessel 100, such as vessel lid 106. It is formed integrally with some.

filter

Preferably, the precursor source vessel includes a filtration device for filtering the gas flow through the vessel to prevent particulate matter (eg, source chemical powder) from leaving the vessel. The filtration device may be provided in the lid of the container, preferably under the surface mount valves 108, 110 and / or 210 (FIGS. 26-28). Preferably, the filtration device comprises separate filters for each inlet and outlet of the vessel.

FIG. 17 is a cross-sectional view of one embodiment of a filtration device 130 that may be installed on the body or lid of a reactant source vessel (eg, lid 106 of FIG. 8). The device 130 described is a filter formed of a flange 132, a filter medium 134, and a fastener element 136. In this embodiment, the filter 130 is sized and shaped to fit into the recess 138 of the lid of the container (eg, lid 106 of FIG. 8). The perimeter of the flange 132 may be circular, rectangular, or other shape, which shape preferably coincides with the perimeter of the recess 138. The filter material 134 is configured to restrict the passage of gas-bearing particles larger than a certain size through the opening defined by the annular inner wall 140 of the flange 132. The material 134 preferably blocks the entire opening defined by the wall 140. Material 134 may comprise any of a variety of different materials, and in one embodiment is a high flow sintered nickel fiber medium. In other embodiments, the filter media is made of other metals (eg, stainless steel), ceramics (eg, alumina), quartz, or other materials typically employed in gas or liquid filters. Material 134 is preferably welded or attached to annular wall 140. In one embodiment, filter 130 includes a surface mount sandwich filter, such as sold by TEM Products (Santa Clara, Calif.).

In the embodiment shown, the fastening element 136 includes a spring snap ring that biases the flange 132 relative to the wall 146 of the lid 106. The ring 136 is preferably fitted tightly in the annular recess 142 around the recess 138. The snap ring 136 may include a flat wire compression spring, such as, for example, a Spirawave® wave spring sold by the Smalley Steel Ring Company of Lake Zurich, IL. Additional and different types of fastening elements can be provided for fastening the filter 130 to the lid 106. Preferably, the fastening element 136 prevents the flow of carrier gas and reactant vapor through the interface between the flange 132 and the lid 106, so all gas must flow through the filter material 134. Sub-recess 147 may be provided to define the plenum 148 on the outside of the filter 130, which may improve the quality of the filtered gas flow. The illustrated filter 130 simply removes the snap ring 136 from the annular recess 142, removes the filter 130 from the groove 138, inserts a new filter 130, and By reinserting the snap ring 136 into the annular recess 142, it is easily replaceable.

The filter recess 138 is preferably located close to one of the shutoff valves of the precursor source vessel. In the embodiment of FIG. 17, the recess 138 is directly under the valve potting block 120 of the outlet shutoff valve 110 (FIG. 1) of the source container 100. Those skilled in the art will appreciate that a separate filter 130 may be provided in association with each shutoff valve of the vessel including the inlet valve 108 and the exhaust valve 210 (FIGS. 26-28). The passage 145 extends from the fill 148 to the passage 144 of the valve potting block 120. In the embodiment shown, the potting block 120 is formed separately from the container lid 106, preferably with a seal provided therebetween. In another embodiment, block 120 is integrally formed with lid 106 and passages 144 and 145 are formed in the same drilling operation.

18 is an enlarged cross sectional view of a surface portion of a filter material 134 according to one embodiment. In this embodiment, the filter material 134 includes a large particle filtration layer 150 and a small particle filtration layer 152. Large particle filtration layer 150 preferably filters relatively larger particles, and small particle filtration layer 152 preferably filters relatively smaller particles. The large particle filtration layer 150 includes a plurality of voids 151. In one embodiment, the large particle filtration layer 150 has about 20-60% voids, more preferably 30-50% voids. In one embodiment, the large particle filtration layer 150 has about 42% voids. Large particle filtration layer 150 may, for example, comprise a stainless steel material. The large particle filtration layer 150 preferably comprises most of the filter material 134. Due to the voids 151, the filter material 134 causes a relatively low pressure drop. One or more support tubes 154 may be provided for improved structural rigidity of the large particle filtration layer 150. Small particle filtration layer 152 may have a pore size of 0.05 to 0.2 microns, more preferably about 0.10 microns. Small particle filtration layer 152 may have a thickness of about 5-20 microns, more preferably about 10 microns. Small particle filtration layer 152 may comprise, for example, a coating of zirconia. Each side of the large particle filtration layer 150 may be coated with a small particle filtration layer 152. Suitable filter materials are similar to AccuSep filters sold by Pall Corporation.

Gas interface assembly

19 is a schematic diagram of a gas delivery system 160 that may be used to flow carrier and reactant gases through precursor source vessel 100 and vapor phase reaction chamber 162. Delivery system 160 includes a vessel 100, a carrier gas source 164, a downstream purifier or filter 166, and several additional valves, as described herein. The shutoff valves 108, 110 are preferably surface-mounted in the vessel 100 as above. Carrier gas source 164 is operable to deliver inert carrier gas to connection point 168. A valve 170 is interposed between the connection point 168 and the vessel inlet valve 108. Valve 172 is interposed between connection point 168 and connection point 174. A valve 176 is interposed between the connection point 174 and the vessel outlet valve 110. Purifier 166 and additional valve 178 are interposed between connection point 174 and reaction chamber 162. As shown, the vessel 100 may have appropriate control and alarm interfaces, displays, panels, and the like.

When it is desirable to flow the carrier gas through the vessel 100 into the reaction chamber 162, the valves 170, 108, 110, 176 and 178 are opened and the valve 172 is closed. Conversely, when it is desirable for the carrier gas to bypass the vessel 100 on the way to the reaction chamber 162, the valves 172 and 178 are opened, preferably all of the valves 170, 108, 110 and 176 It is closed. The valve 178 can be used to isolate the reaction chamber 162 from the gas delivery system 160, for example for maintenance and repair.

Referring again to FIG. 7, a gaseous interface assembly that facilitates control of the flow of carrier gas and reactant vapor through the vessel 100 and associated vapor phase reaction chamber is provided by a precursor gas delivery system (as shown in FIG. 19). It may be implemented at 180. The illustrated gas interface assembly 180 can perform a number of valves 182 (which can perform substantially the same functions as the valves 170, 172, 176 and 178 of FIG. 19), downstream purifiers or filters 184, and heaters. Plate 186. The valve 182 may include a valve potting block 188 that is similar in principle and operation to the valve potting blocks 118 and 120.

7 and 19, a gas line 133 extends from one of the valves 182 that receives the carrier gas from the carrier gas source 164. For example, the valve 182 from which the gas line 133 extends can substantially perform the function of the valve 170 of FIG. 19. 7 does not show a gas line extending from a carrier gas source to such a valve, it will be appreciated that this is provided. The gas line 133 includes an accessory 131 that is connected to the carrier gas inlet accessory 122 of the container 100 when the container and the gas interface assembly 180 are connected. The outlet 135 of the gas interface assembly 180 delivers gas to the reaction chamber 162. It will be appreciated that the carrier gas inlet of the source vessel may be configured to resemble the outlet orifice 128.

With continued reference to FIG. 7, the heater plate 186 heats the valve 182 and the vessel 100 preferably to a temperature higher than the evaporation temperature of the precursor. The high level of thermal contact between the various valves, valve potting blocks, and gas conduits of the preferred embodiments, and the proximity of the heater plate 186 to these components, in the gas-carrying component downstream of the vessel 100. Reduce the total heat required to prevent the condensation of the precursors. The heater plate 186 may be heated by various different types of heaters, such as cartridge heaters or line heaters. The heater plate may be formed of various materials such as aluminum, stainless steel, titanium, or various nickel alloys. Also, a thermofoil-type heater may be used to heat the heater plate 186 and the valve potting block 188. Using a thermofoil-type heater may allow for varying watt densities or more than one temperature control region. Combining variable watt densities or multiple temperature control regions to the heater plate 186 may make it possible to induce a temperature gradient along the flow path of the gas. This may provide for gradual heating of the reactant vapor as it moves downstream, thus condensation is avoided. Suitable thermofoil heaters are sold by Minco, Minneapolis, MN. In addition, additional heaters (including line heaters, cartridge heaters, radiant heat lamps, and thermofoil-type heaters) may be provided to heat container lid 106 and container body 104.

In some embodiments, a dedicated heater may be provided to heat the vessel 100. In one particular embodiment shown in FIG. 18 (described in more detail below), a dedicated heating device 220 is provided below the bottom surface of the container body 104 of the container.

As mentioned above, precursor vapor may be recovered from the vessel 100 by a "vapor recovery method" and an external gas flow method. In the vapor draw method, in order to recover the vapor, the vessel 100 is vacuumed. For example, a vacuum may be applied downstream of the reaction chamber 162 with the valves 110, 176, 178 open and the valves 108, 170, 172 closed. The vacuum can be applied, for example, by using a vacuum pump. In the external gas flow method, the precursor vapor is discharged by flowing a carrier gas from the source 164 to the reaction chamber 162 with the valves 110, 172, 176, 178 open and the valves 108, 170 closed. May be recovered from the vessel 100. Under certain conditions, a pressure difference can be made between the vessel 100 and the flow passage of the carrier gas, which allows the precursor vapor to flow towards the reaction chamber.

Quick connect ( Quick - Connection Assembly

With continued reference to FIG. 7, the quick connect assembly 102 preferably facilitates quicker and easier mounting, alignment, and connection of the precursor source vessel 100 and the gas interface assembly 180. The quick connect assembly 102 is ergonomically friendly and facilitates replacement, refilling and durability of the container 100. A wide variety of types of quick connect assemblies can be provided, remembering this purpose, and those skilled in the art will understand that the illustrated assembly 102 is just one embodiment. The quick connect assembly 102 is embedded in a vacuum enclosure in which the source container 100 and the support control hardware are packaged.

7, 20 and 21, the quick connect assembly 102 includes a base 190, a pedestal 192 extending upwardly from an edge of the base 190, the track component 194. And lift assembly 196. Base 190 may preferably be secured to the lower inner surface of gas delivery system 6 (FIG. 1), such as on floor 9 of reactant source cabinet 16. Preferably, pedestal 192 is connected and supported to gas interface assembly 180 at a location above base 190. Track component 194 includes a platform 198 and two roller tracks 200 on either side of the platform 198. A pair of roller assemblies 202 with aligned rollers 204 are preferably secured to both sides of the container 100. In this embodiment, the roller 204 is configured to be rolled in size within the track 200 of the track component 194 so that the container 100 can be quickly and easily positioned on the platform 198. .

When the container 100 is loaded onto the platform 198 with the roller assembly 202 coupled to the track 200, the outlet of the outlet valve 110 is preferably a valve 182 of the gas interface assembly 180. Is aligned vertically with the inlet of one of the valves. The lift assembly 196 is configured to move the platform 198 vertically between the lowered position (see FIG. 7) and the raised position (see FIGS. 20 and 21). When the vessel 100 is loaded on the platform 198 and the platform is moved to its raised position, the outlet of the outlet valve 110 preferably communicates directly or indirectly with the inlet of one of the valves 182. do. Minimal manual adjustment may be required to properly seal the interface between the outlet of outlet valve 110 and the inlet of valve 182. In the disclosed embodiment, the outlet of the outlet valve 110 is an orifice 128 in the valve potting block 120. In this manner, the quick connection assembly 102 enables quick connection of the precursor source container 100 and the gas interface assembly 180.

As shown in FIG. 20, the disclosed lift assembly 196 includes a lift handle 195 that can manually drive scissor legs 197 to vertically move the platform 198. For example, the handle 195 and leg 197 can operate in a similar manner to some existing auto jacks. In one embodiment, the lift assembly 196 lifts the platform 198 to its raised position when the handle 195 is rotated approximately 180 °. However, it will be assumed that other types of lift apparatus may alternatively be provided.

The quick connect assembly 102 facilitates replacement of the depleted container 100 with a new container. In addition, since assembly 102 is simple to remove and install, it is easier to perform routine maintenance on container 100. Preferably, the weight of the container 100 is such that it can be easily processed by one technician.

22-24 show alternative embodiments of the quick connect assembly 102. The disclosed assembly 102 includes a platform 198 and a pedestal 192. The platform 198 includes a track 200 configured to receive tongues 206 attached to both sides of the container 100. One or more lift devices 208 are provided to lift the platform 198. In the described embodiment, the lift device 208 includes a bolt under the platform 198. The bolt can rotate to raise the platform 198 to a connection position associated with the vessel 100. A guide device (not shown) may be provided to maintain the vertical alignment of the platform 198.

Exhaust valve ( Vent Valve )

As mentioned above, the precursor source vessel is typically provided with a head pressure of an inert gas (eg, helium) in the vessel. During the exhaust, or “burping” of this head pressure below the usual process pressure, the solid precursor particles are aerosolized and entrained in an inert gas effluent. This can contaminate the gas delivery system, the reactive gas delivery system, and finally the exhaust / scrubber of the reactor since such gas is normally exhausted through the outlet shutoff valve of the vessel. Subsequently, during substrate processing, contaminated portions of the gas panel that are common to the precursor delivery path and the exhaust path may cause processing defects in the ALD of the substrate.

FIG. 26 shows an example of a precursor source vessel 100 that includes an exhaust valve 210. In this embodiment, the exhaust valve 210 is located between the inlet shutoff valve 108 and the outlet shutoff valve 110. However, those skilled in the art can assume that other arrangements are possible. Preferably, the exhaust valve 210 includes a valve potting block 212, which may be substantially similar to the valve potting blocks 118, 120. FIG. 27 shows the container 100 of FIG. 26 connected to the gas interface assembly of FIGS. 22-24 as described above.

FIG. 28 is a cross-sectional view of an embodiment of the container 100 of FIG. 26. As noted above, the container 100 includes a container body 104, a sand insert 112, a spring 114, and a container lid 106. The container lid 106 preferably includes surface mount shutoff valves 210 as well as surface mount shutoff valves 108, 110. Preferably, the valves 108, 210, 110 each comprise valve potting blocks 118, 212, 120. 28 also shows the internal gas passage 214 of the valve potting block. As noted above, the valve potting block 120 includes a gas outlet 128 that supplies precursor vapor and carrier gas to the gas interface assembly 180.

Preferably, a filter is connected to each of the valves 108, 210, 110. In the described embodiment, the container lid 106 includes a filter 130 (eg, shown and described above in FIG. 17) connected to each valve. It will be assumed that various different types of filters can be used. The filter prevents precursor particles from escaping from the vessel 100.

While preferred embodiments of the invention have been described, it is to be understood that the invention is not limited and that modifications may be made without departing from the invention. It is intended that the scope of the invention be defined by the claims appended hereto and include all such devices, processes and methods as are intended or within the meaning of the claims by one of their equivalents.

Claims (25)

A lid having an inlet port, an outlet port and a burp port; And
A base removably attached to said lid,
And the base has a recessed region formed therein. The precursor source container of claim 1, wherein the concave region comprises an inlet concave pad, an outlet concave pad, a buff concave pad, and a channel fluidly connecting each of the pads. The precursor source container of claim 2, wherein the channel comprises a plurality of linear portions. 4. The precursor source container of claim 3, wherein at least two of the linear portions are adjacent and substantially parallel. The precursor source container of claim 2, wherein the channel comprises a plurality of arced sections. 6. The precursor source container of claim 5, wherein at least two of the arc portions are adjacent and substantially concentric. The precursor source container of claim 1 further comprising a valve assembly operatively connected to each of the ports. 8. The precursor source container of claim 7, wherein each of the valve assemblies is directly connected to the lid. The precursor source container of claim 1, further comprising a valve operatively connected to each of said ports, each of said valves being coplanar with an upper surface of said lid. The precursor source container of claim 1, wherein the concave region comprises a channel fluidly connecting the inlet port, the outlet port, and the buff port. The precursor source container of claim 10, wherein the channel is a tortuous path. A base having a recessed area formed therein,
A lid removably attached to the base, and
A buff valve operatively attached to the lid,
The concave region is adapted to receive the precursor material,
The lid has an inlet port, an outlet port and a buff port,
The buff valve is operatively connected to the buff port. 13. The precursor source container of claim 12 further comprising a buff filter coplanar with an upper surface of the lid adjacent the buff pot. 13. The precursor source vessel of claim 12 wherein the buff port is fluidly connected directly to a buff gas line bypassing the reaction chamber. A base having a bottom surface, a contact surface, a side surface extending between the contact surface and the bottom surface, and an inner surface extending from the contact surface to define a recessed area in the base;
A lid removably attached to the base,
Said lid having an inlet port, an outlet port and a buff port. The lid of claim 15, wherein the lid comprises a top surface, a bottom surface, and a side extending between the top surface and the bottom surface, wherein the bottom surface of the lid is attached to the base when the lid is attached to the base. A precursor source container in contact with the contact surface of the base. 17. The precursor source container of claim 16 further comprising an interior volume defined between the inner surface of the base and the lower surface of the lid. 16. The precursor source container of claim 15, wherein the concave region provides a fluid path between the inlet port and the outlet port. 19. The precursor source container of claim 18, wherein the concave region comprises at least an inlet concave pad, an outlet concave pad, and a channel fluidically connecting the inlet concave pad and the outlet concave pad. 20. The precursor source container of claim 19, wherein the channel comprises a plurality of linear portions. 21. The precursor source container of claim 20, wherein at least two of the linear portions are adjacent and substantially parallel. 20. The precursor source container of claim 19, wherein the channel comprises a plurality of arced portions. 23. The precursor source container of claim 22, wherein at least two of the arc portions are adjacent and substantially concentric. 16. The precursor source vessel of claim 15 further comprising a heating assembly disposed within the base. A lid having a first port, a second port, and a third port; And
A base removably attached to said lid,
And the base has a recessed region formed therein.

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