KR20110109633A - Light emitting diode package - Google Patents

Light emitting diode package Download PDF

Info

Publication number
KR20110109633A
KR20110109633A KR1020100029432A KR20100029432A KR20110109633A KR 20110109633 A KR20110109633 A KR 20110109633A KR 1020100029432 A KR1020100029432 A KR 1020100029432A KR 20100029432 A KR20100029432 A KR 20100029432A KR 20110109633 A KR20110109633 A KR 20110109633A
Authority
KR
South Korea
Prior art keywords
light
phosphor layer
led chip
phosphor
cavity
Prior art date
Application number
KR1020100029432A
Other languages
Korean (ko)
Inventor
김근율
Original Assignee
서울반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울반도체 주식회사 filed Critical 서울반도체 주식회사
Priority to KR1020100029432A priority Critical patent/KR20110109633A/en
Publication of KR20110109633A publication Critical patent/KR20110109633A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention relates to an LED package in which light loss due to the phosphor is improved by the structure of the phosphor layer having the light transmitting portion.
To this end, the present invention is a package body having a cavity; And a LED chip mounted on a bottom surface of the cavity, wherein the cavity includes a phosphor layer having a light transmitting part for transmitting light output from the LED chip.

Description

LED package {LIGHT EMITTING DIODE PACKAGE}

TECHNICAL FIELD The present invention relates to an LED package, and more particularly, to an LED package having improved light loss due to a phosphor by the structure of a phosphor layer having a light transmitting portion.

In general, LED (Light Emitting Diode) packages can obtain light output of various colors such as white, red, and blue with low power consumption of several watts to several tens of watts. It has been applied to various lighting devices that showcase goods.

Referring to FIG. 1A, a conventional LED package 1 includes a package body 11 having lead frames 12 and 13 disposed therein and having a cavity 15 and a bottom of the cavity 15. LED chip 14 is included. The encapsulant 16 encapsulates the LED chip 14 in the cavity 15. Phosphor 17 for color conversion is dispersed in this encapsulant 16.

The LED package 1 may implement white light by combining the LED chip 14 and the dispersed phosphor 17. This is achieved by attaching a part of the light as an excitation source, for example, yellow green or yellow light, on top of the LED chip emitting blue light to obtain white color by blue light emission of the LED chip 14 and yellow green or yellow light emission of the phosphor 17. Can be. That is, white light can be realized by a combination of a blue LED chip made of a semiconductor component emitting a wavelength of 430 to 480 nm and a phosphor capable of generating yellow light using blue light as an excitation source.

As is well known, due to the encapsulant having a higher refractive index than air, the light emitted from the LED chip can escape from the encapsulant directly (i.e. beam) and from the encapsulated mode light (i.e. beam) that do not escape the encapsulant. Are divided into Bound mode light is incident from the LED chip to the upper surface of the encapsulant, that is, the interface between the encapsulant and the outside air at a critical angle or more, and is trapped in the encapsulant without escaping into the air by total reflection on the upper face of the encapsulant. On the other hand, the escape mode light is incident on the upper surface of the encapsulant below the critical angle from the LED chip can be immediately escaped to the outside air.

On the other hand, the LED package, as shown in Figure 2, it is common to include phosphor particles 17 in the encapsulant 16. By such phosphor particles, the light b in the bond mode from the LED chip 14 can escape the encapsulant 16 by changing the direction of travel in the direction of the solid arrow by the phosphor particles 17, On the contrary, the light a in the escape mode may not move out of the encapsulant 16 by changing the traveling direction in the direction of the solid arrow by the phosphor particles 17. At this time, the light emitted from the LED chip 14 is absorbed by the phosphor particles 17 is converted into a beam having a long wavelength or scattered on the surface of the phosphor particles 17 to change the direction of progress, in this process, the light loss Is generated.

For example, in order to obtain white light with an LED package having a blue LED chip 14, part of the blue light emitted from the LED chip 14 escapes the encapsulant 16 without reaction with a phosphor, that is, blue light, The remaining blue light must be wavelength-converted to green or yellow in response to the phosphor 17. And white light can be obtained by mixing these blue light and green or yellow light.

Conventionally, the light b in the constrained mode and the light a in the escape mode undergo almost the same process as above (i.e., some convert to the blue wavelength and some convert to the yellow wavelength). However, in the case of the binding mode light (b), if the phosphor 17 meets the phosphor 17 and changes its propagation path, there is a possibility of escape, which may be advantageous in terms of light extraction efficiency, but in the case of the binding mode light (b), the phosphor 17 If it was not met, even though it was possible to escape out of the encapsulant 16 without any loss, the path of encountering the phosphor 17 was changed, thereby increasing the probability of being bound inside the LED package, thereby reducing the package light extraction efficiency. Let's go.

Meanwhile, in FIG. 1B, the LED chip 24 is mounted on the bottom surface of the cavity 25, and the phosphor layer 27 is disposed on the top surface of the LED chip 24.

The LED package 2 having such a structure may improve the color uniformity of the output light emitted from the encapsulant 26 through the phosphor layer 27 having a constant thickness formed on the upper surface of the LED chip 24, but the phosphor layer The light loss by black scattering of (27) is large. In detail, since the phosphor layer 27 is in contact with the encapsulant 26, for example, the upper surface, the phosphor layer 27 does not escape to the outside of the LED package 2 out of the light emitted from the LED chip 24 toward the LED chip 24. Much of the reflected light is scattered and dissipated within the phosphor layer 27, resulting in light loss of the LED package 2.

In addition, since the phosphor layer 27 having a uniform thickness must be formed on the upper surface of the LED chip 24, complicated process steps and precise process conditions are required. In addition, the light emitting portion of the LED chip 24 and the phosphor layer 27 abut, so that the phosphors distributed on the phosphor layer 27 are subjected to a large amount of thermal effects generated from the LED chip 24 to prevent the LED package 2. It may lower the reliability.

Phosphors shown in (a) and (b) of FIG. 1 are absorbed without color conversion of all the light generated from the LED chips 14 and 24, and inevitably light loss is generated, so that the path of light mainly The phosphor needs to be distributed to avoid.

SUMMARY OF THE INVENTION An object of the present invention is to provide an LED package in which light loss due to a phosphor is improved by the structure of a phosphor layer having a light transmitting portion.

LED package according to an embodiment of the present invention for achieving the above object is a package body having a cavity; And a LED chip mounted on a bottom surface of the cavity, wherein the cavity includes a phosphor layer having a light transmitting part for transmitting the light output from the LED chip.

It is preferable that the said light transmitting part is an opening part.

The light-transmitting portion is made of a light-transmissive resin, it is preferably located above the LED chip.

It is preferable that a step portion for supporting the phosphor layer is formed on the inner side wall of the cavity.

The phosphor layer is preferably formed on the inner side wall of the cavity.

In addition, the LED package according to another embodiment of the present invention includes a package body having a cavity; An LED chip mounted on the bottom surface of the cavity; And first and second phosphor layers disposed on the LED chip, wherein the first and second phosphor layers contain phosphors having different concentrations.

The first phosphor layer is formed with a light transmitting portion, and the second phosphor layer is preferably located at the light transmitting portion.

It is preferable that the said light transmitting part is an opening part.

The first phosphor layer preferably contains a high concentration of phosphors, and the second phosphor layer preferably contains a low concentration of phosphors.

According to the exemplary embodiment of the present invention, the light loss due to the phosphor may be minimized by the structure in which the phosphor layer having the light-transmitting part is installed, thereby increasing the light extraction efficiency.

In addition, according to an embodiment of the present invention is spaced apart between the upper surface and the phosphor layer of the LED chip has the effect of improving the reliability of the phosphor contained in the phosphor layer.

In addition, according to an embodiment of the present invention, a phosphor layer containing phosphors of different concentrations is provided in the cavity, and a second phosphor layer containing a low concentration of phosphors in the upper direction of the LED chip is installed to generate light of the LED chip. It also has the effect of reducing losses.

1 is a cross-sectional view showing a conventional LED package.
FIG. 2 is a view showing light whose traveling direction changes depending on whether or not the phosphor shown in FIG.
3 is a view showing an LED package according to an embodiment of the present invention.
4 is a cross-sectional view taken along II of FIG. 3.
5 is a cross-sectional view showing an LED package according to another embodiment of the present invention.
6 and 7 are cross-sectional views showing an LED package according to another embodiment of the present invention.
8 is a plan view of the phosphor layer shown in FIG.
FIG. 9 is a graph showing simulation results of the LED package shown in FIG. 1A and the LED package shown in FIG. 3.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to sufficiently convey the spirit of the present invention to those skilled in the art. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. And, in the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.

3 is a view showing an LED package according to an embodiment of the present invention, Figure 4 is a cross-sectional view taken along the line I-I shown in FIG.

3 shows an LED package 3 according to an embodiment of the present invention including an LED chip 34 and a package body 31 on which the LED chip 34 is disposed. The LED chip 34 is mounted on the bottom surface of the cavity 35 provided in the package body 31, and in the cavity 35, a phosphor layer 37 having a light transmitting part for transmitting the light output from the LED chip 34. ) Is installed. By the phosphor layer 27, the light emitted upward from the LED chip 34 can be emitted out of the LED package 3 as it is.

Referring to the cross-sectional view of the LED package 3 shown in FIG. 4, the package body 31 supports a pair of lead frames 32 and 33 disposed therein. The LED chip 34 is mounted on one of the lead frames 32 of the pair of lead frames 32 and 33 disposed inside the package body 31 and is connected to the other lead frame by the bonding wires W. 33) is electrically connected. In this embodiment, the LED chip is mounted on the lead frame. However, the present invention is not limited thereto. When the LED chip is mounted to avoid the pair of lead frames, two bonding wires are used to electrically connect the pair of lead frames. May be connected.

The cavity 35 provided in the package body 31 has a bottom surface and an inner side wall, and the inner side wall is inclined such that the cavity 35 has a wide space at the top and a narrow space at the bottom.

In the cavity 35, a phosphor layer 37 for color conversion of light generated by the LED chip 34 is disposed. The phosphor layer 37 is composed of at least one phosphor and a resin, and is preferably determined by the concentration of the phosphor to obtain desired coordinates. As the resin, a thermosetting resin having transparency such as a silicone resin, an epoxy resin, a polymer-based resin, or the like may be used.

The distance between the LED chip 34 and the phosphor layer 37 is preferably such that the bonding wires W are provided in this embodiment.

The light-transmitting portion of the phosphor layer 37 is an opening that exposes the upper portion of the LED chip 34, and the opening is formed at a position corresponding to an entire area or a part of the top surface of the LED chip 34. By the opening formed in the phosphor layer 37, the light emitted upward from the LED chip 34 is emitted out of the LED package 3 as it is without interference of the phosphor layer 37. Therefore, the light emitted within the total reflection angle through the upper part of the LED chip 34 can escape immediately from the LED package 3 without reacting to the phosphor, and is directly escaped without being absorbed or scattered by the phosphor particles. Loss due to the portion of the light, there is no bond loss due to the change in the direction of travel, it is possible to increase the light extraction efficiency.

The graph of FIG. 9 shows a comparison result of a simulation of the LED package A shown in FIG. 1A and the LED package B shown in FIG. 4. As shown in FIG. 9, in the LED package 3 in which the phosphor layer 37 having a light transmitting portion for transmitting the light output from the LED chip 34 is formed, the amount of light of the green side as well as the blue side is generally increased.

On the other hand, the light that is totally reflected back from the upper surface of the LED package 3 reacts with the phosphor layer 37 to be made into light having a long wavelength.

In addition, the light emitted laterally from the LED chip 34 is excited by the phosphor contained in the phosphor layer 37 to emit light of different wavelengths, thereby realizing various lights.

For example, when the LED chip 34 is an LED chip that emits blue light, a phosphor containing excitation to the blue light and providing light of a different wavelength, for example, yellow (Y) light, or to the blue light to obtain white light. Phosphor layer 37 containing phosphors that are excited to provide light of different wavelengths, such as green (G) and red (R) light, may be used, and other combinations may also produce white light. In addition to the white light, a combination of the LED chip and the phosphor for implementing a desired color may be considered.

The above-described phosphor layer 37 is supported on the inner side wall of the cavity 35, but may be manufactured to have a size that can be supported close to the top of the LED chip 34. However, the present invention is not necessarily limited thereto, and as shown in FIG. 5, the stepped portion 451 is formed on the inner side wall of the cavity 45, and the phosphor layer 47 is supported on the stepped portion 451. May be considered. In this case, the phosphor layer 47 may be attached to the stepped portion 451 by an adhesive means such as an adhesive or a double-sided tape.

4 again, an encapsulant 36 is formed in the cavity 35 to cover the upper portion of the LED chip 34. The encapsulant 36 may be made of a light-transmissive resin. The encapsulant 36 is formed in a space between the phosphor layer 37 and the bottom surface of the cavity 35, and in a space between the phosphor layer 37 and the upper end of the cavity 35, so that the phosphor layer 37 is supported. Can be.

As described above, the LED package 3 having the phosphor layer 37 having an opening formed on the LED chip 34 has an LED as compared with the conventional LED package in which phosphors are distributed in the cavity as a whole or phosphors are distributed on the upper surface of the LED chip. The light extraction efficiency of the LED chip 34 may be improved by not receiving interference from the phosphor on the chip.

Hereinafter, another embodiment of the present invention will be described.

6 and 7 are cross-sectional views illustrating an LED package according to another embodiment of the present invention, and FIG. 8 is a plan view of the phosphor layer shown in FIG. 7.

6, since the LED package 5 according to another embodiment of the present invention is the same as the components of the previous embodiment except for the phosphor layer 57, different parts will be mainly described.

The phosphor layer 57 has a light transmitting portion for transmitting the upper light of the LED chip 54 and is installed to surround the inner side wall of the cavity 55 provided in the package body 51. The phosphor layer 57 may be attached to the inner side wall of the cavity 55 using an adhesive means such as an adhesive.

By the structure in which the phosphor layer 57 is provided on the inner side wall of the cavity 55 as described above, the light generated upward from the LED chip 54 does not strike the inner side wall of the cavity 55 without being hit by the LED package 5. Since the light is emitted outside, the light generated laterally from the LED chip 53 is excited by the phosphor contained in the phosphor layer 57 formed on the inner side wall of the cavity 55 to emit light of a different wavelength. Can be released out of the LED package 5.

In particular, the light generated by the LED chip 54 and exited at each angle within the total reflection can escape the LED package 5 as it is, and the totally reflected light is returned to the inside of the cavity 55 in which the phosphor layer 57 is installed. Reflected by the sidewalls to emit long wavelengths of light.

Referring to FIG. 7, the LED package 6 according to another embodiment of the present invention includes a package body 61 having a cavity 65 having an open top, and mounted on a bottom surface of the cavity 65. The LED chip 64 and the phosphor layer 67 provided above the LED chip 64 are included.

Unlike the LED package 5 shown in FIG. 6, the phosphor layer 67 includes first and second phosphor layers 671 and 672 of different concentrations on the upper side of the LED chip 34. The first phosphor layer 671 is formed with a light transmitting portion for transmitting the light output from the LED chip 64, the second phosphor layer 672 is located on the light transmitting portion.

The first phosphor layer 671 is an edge portion of the phosphor layer 67 and contains a high concentration of phosphor. In addition, the first phosphor layer 671 may color convert light generated laterally from the LED chip 64.

The second phosphor layer 672 is located close to the top surface of the LED chip 64, and contains a lower concentration of phosphor than the first phosphor layer 671. Therefore, a part of the light generated upward from the LED chip 64 may be emitted to the LED package 6 as it is without hitting the phosphor.

The first and second phosphor layers 671 and 672 may include different kinds of phosphors.

In addition, the LED chip 64 and the phosphor layer 67 may be spaced apart. Accordingly, it is possible to reduce the loss of scattered or extinguished light reflected from the LED chip out of the LED package outgoing light of the conventional LED chip and increase the luminous efficiency, furthermore, due to the heat generated from the LED chip 64 The phenomenon that the characteristic of fluorescent substance deteriorates can be prevented.

The encapsulant 66 is formed to cover the phosphor layer 67 provided on the LED chip 64. The phosphor layer 67 may be protected by the encapsulant 66, and the pressing of the bonding wire W may be prevented.

The invention being thus described, it will be obvious that the same way may be varied in many ways. Such modifications are intended to be within the spirit and scope of the invention as defined by the appended claims.

3: LED package 31: package body
32: pair of lead frames 34: LED chip
35: cavity 36: encapsulant
37 phosphor layer W: bonding wire

Claims (9)

A package body having a cavity; And
Including the LED chip mounted on the bottom surface of the cavity,
The cavity is a LED package including a phosphor layer having a light transmitting portion for transmitting the light output from the LED chip. The method according to claim 1,
LED package, characterized in that the light transmitting portion is an opening. The method according to claim 1,
The light transmitting part is made of a light-transmissive resin, LED package, characterized in that located on top of the LED chip. The method according to claim 1,
LED package, characterized in that the stepped portion for supporting the phosphor layer on the inner side wall of the cavity. The method according to claim 1,
The phosphor layer is LED package, characterized in that formed on the inner side wall of the cavity. A package body having a cavity;
An LED chip mounted on the bottom surface of the cavity; And
Including a first and a second phosphor layer disposed on the LED chip,
Wherein said first and second phosphor layers contain phosphors of different concentrations. The method of claim 6,
The first phosphor layer is formed with a light transmitting portion,
The second phosphor layer is located in the light transmitting portion LED package. The method according to claim 7,
LED package, characterized in that the light transmitting portion is an opening. The method of claim 6,
Wherein said first phosphor layer contains a high concentration of phosphor and said second phosphor layer contains a low concentration of phosphor.
KR1020100029432A 2010-03-31 2010-03-31 Light emitting diode package KR20110109633A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020100029432A KR20110109633A (en) 2010-03-31 2010-03-31 Light emitting diode package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100029432A KR20110109633A (en) 2010-03-31 2010-03-31 Light emitting diode package

Publications (1)

Publication Number Publication Date
KR20110109633A true KR20110109633A (en) 2011-10-06

Family

ID=45391611

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100029432A KR20110109633A (en) 2010-03-31 2010-03-31 Light emitting diode package

Country Status (1)

Country Link
KR (1) KR20110109633A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200045741A (en) * 2018-10-23 2020-05-06 주식회사 루멘스 Ultraviolet light emitting diode package

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200045741A (en) * 2018-10-23 2020-05-06 주식회사 루멘스 Ultraviolet light emitting diode package

Similar Documents

Publication Publication Date Title
JP5481587B2 (en) Light emitting element
JP5133120B2 (en) Light emitting device
US20100044735A1 (en) Light-emitting device
JP5025636B2 (en) Light emitting device
US20110089815A1 (en) Light-emitting device
JP6457225B2 (en) Light emitting device
JP2015176960A (en) light-emitting device
JP2014146784A (en) White light package containing plural blue light emitting diodes
JP2009239313A (en) Optoelectronic device
JP6223479B2 (en) Solid light emitter package, light emitting device, flexible LED strip, and luminaire
JP2013120812A (en) Light emitting device
US20120211789A1 (en) Light emitting device package
JP4591106B2 (en) White light emitting device
JP2007005549A (en) White-light emitting diode lamp
US8040039B2 (en) Device and method for emitting composite output light using multiple wavelength-conversion mechanisms
US20080211388A1 (en) Light emitting semiconductor device
US8461609B2 (en) Light emitting device package
US11004834B2 (en) LED unit
KR100868204B1 (en) Light emitting diode using light diffusion material and method for fabricating the same
JP2013110154A (en) Light emitting device
JP2008028182A (en) Lighting device
KR101518459B1 (en) Light emitting diode package
KR20110109633A (en) Light emitting diode package
KR20100010102A (en) Light emitting device package and method for fabricating the same
TWI527274B (en) Light emitting diode package structure

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination