KR20110109430A - Nano light emitting diodes or micro light emitting diodes fabricated by using ion implantation and its fabricating method - Google Patents
Nano light emitting diodes or micro light emitting diodes fabricated by using ion implantation and its fabricating method Download PDFInfo
- Publication number
- KR20110109430A KR20110109430A KR1020100029163A KR20100029163A KR20110109430A KR 20110109430 A KR20110109430 A KR 20110109430A KR 1020100029163 A KR1020100029163 A KR 1020100029163A KR 20100029163 A KR20100029163 A KR 20100029163A KR 20110109430 A KR20110109430 A KR 20110109430A
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- South Korea
- Prior art keywords
- light emitting
- ion implantation
- emitting diode
- nano
- emitting diodes
- Prior art date
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- 238000005468 ion implantation Methods 0.000 title abstract description 25
- 238000000034 method Methods 0.000 title description 16
- 238000004519 manufacturing process Methods 0.000 abstract description 15
- 239000000758 substrate Substances 0.000 abstract description 5
- 229910002601 GaN Inorganic materials 0.000 description 19
- 239000002086 nanomaterial Substances 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B1/002—Devices comprising flexible or deformable elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
Abstract
Disclosed are a structure and a manufacturing method of a nano light emitting diode or a micro light emitting diode. The light emitting diode structure according to the present invention includes a substrate and an active layer formed between the n-GaN layer and the p-GaN layer and forms a pattern using a nano or micro mask. With this structure, an nano-light emitting diode can be manufactured more easily by forming an insulating layer using ion implantation or plasma doping.
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a nano light emitting diode or a micro light emitting diode, wherein a nanostructure is formed in an active region, and a nanomask or a micromask is formed at the top of an epi (p-GaN). Thereafter, a portion without a pattern is selectively formed by using ion implantation or plasma doping. At this time, the portion generated by the ion implantation or plasma doping method is at least one of Si, Te, Zn, Mg, Ca, Ar, Be, O, Au, Ti, C, H, He, Si, Al, In, B Ions are formed using plasma, and the light generated in the active layer intersects with the region formed by ion implantation or plasma doping. At this time, the light is totally reflected because the refractive index is different. The totally reflected light escapes to the outside, and since a lot of light is reflected to the outside of the LED chip without the internal loss of light, it is a technology that can realize a high efficiency LED.
Generally, a light emitting diode is a semiconductor device that emits light based on recombination of electrons and holes, and is widely used as a light source in various forms in optical communication and electronic devices. GaN in the compound is spotlighted as a compound for manufacturing a blue light emitting diode device.
White light emitting diodes using semiconductors have been spotlighted as one of the next generation light emitting devices that can replace the existing light emitting devices due to their long lifespan, miniaturization, and low voltage driving.
Conventional methods for manufacturing such white light emitting diodes include a method using all three color (red, green, blue) light emitting diodes. However, the manufacturing cost is high and the size of the product is increased due to the complexity of the driving circuit. have.
In addition, a white LED in which yellow-green phosphor is combined with an InGaN-based blue LED having a blue wavelength has been put to practical use, and part of the blue light generated from the blue LED excites the yellow-green phosphor to generate yellow-green color. It is synthesized and composed of the principle of emitting white light.
However, the light of a white LED, which combines a blue LED with a yellow-green phosphor, has only a part of the spectrum of visible light, and thus has a low color rendering index and thus does not have a proper color representation. Since the wavelength of the blue LED is about 450 nm, the chip efficiency is low, and thus, the luminous efficiency of the white LED is low.
In addition, as a novel LED manufacturing method, the present invention relates to a method of manufacturing a nano light emitting diode or a micro light emitting diode, wherein a nanostructure is formed in an active region, and a nano mask or a micro mask is formed at the top of an epi (p-GaN). . Thereafter, a portion without a pattern is selectively formed by using ion implantation or plasma doping. At this time, the portion generated by the ion implantation or plasma doping method was formed using a metal other than Al, In, B, and the light generated in the active layer intersects the region formed by the ion implantation or plasma doping method. At this time, the light is totally reflected because the refractive index is different. The totally reflected light escapes to the outside, and since a lot of light is reflected to the outside of the LED chip without the internal loss of light, it is a technology that can realize a high efficiency LED.
The present invention relates to a method of manufacturing a nano light emitting diode or a micro light emitting diode in an existing light emitting diode structure, which proposes a new method for implementing a white light according to the prior art, and forms a nano structure in an active region, and a nano mask or a micro mask. Is formed at the top of Epi (p-GaN). Thereafter, a portion without a pattern is selectively formed by using ion implantation or plasma doping. At this time, the portion generated by the ion implantation or plasma doping method is at least one of Si, Te, Zn, Mg, Ca, Ar, Be, O, Au, Ti, C, H, He, Si, Al, In, B Ions are formed using plasma, and the light generated in the active layer intersects with the region formed by ion implantation or plasma doping. At this time, the light is totally reflected because the refractive index is different. The totally reflected light escapes to the outside, and since a lot of light is reflected to the outside of the LED chip without the internal loss of light, it is a technology that can realize a high efficiency LED.
In ion implantation or plasma doping, reactive ions are used, wherein at least one of Si, Te, Zn, Mg, Ca, Ar, Be, O, Au, Ti, C, H, He, Si, Al, In, B One reactive ion is a method of forming each nanostructure or microstructure using plasma. In this case, the refractive indexes of GaN and ion implantation or plasma doped regions are different, and thus light emitting diodes having higher optical characteristics can be manufactured.
The light emitting diode structure according to the present invention for achieving the above object comprises a substrate and an active layer formed between the n-GaN layer and p-GaN layer to form a pattern using nano or micro mask.
In the conventional light emitting diode, the light emitting diode has a structure in which the light generated in the active layer escapes upward. However, light emitting diodes with nanostructures are made to shine from the top as well as from the side. This may result in an increase in luminance than a conventional light emitting diode. However, there is a difficulty in manufacturing a light emitting diode having a nano structure, one of which is to form an insulating layer between the nano structure and the nano structure. In the present invention, it is expected that the nano-light emitting diode can be more easily manufactured by forming an insulating layer by using an ion implantation or plasma doping method.
1 is a view for explaining a method of manufacturing a structure of a light emitting diode according to the present invention.
Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
1 is a view for explaining a method of manufacturing a structure of a light emitting diode according to the present invention. Referring to FIG. 1, GaN having an LED structure is grown on a sapphire substrate by using MQCVD (metal organic chemical vator deposition), and then a pattern is formed on the p-GaN layer using a nanomask or a micro mask. Thereafter, at least one reactive ion among Si, Te, Zn, Mg, Ca, Ar, Be, O, Au, Ti, C, H, He, Si, Al, In, and B is applied to the nanopattern or micropattern using plasma. To form a pattern using ion implantation or plasma doping. After that, the transparent electrode layer n, p electrode is formed to manufacture the LED.
In more detail, the present invention is a nano-sized pattern or a micro-sized pattern on the top of the light emitting diode substrate (gallium nitride, gallium arsenide) used to date at least of the round, square, triangular, hexagonal shape One pattern is formed. Thereafter, ion implantation or plasma doping is performed on the formed nanomasks or micromasks, and ion implantation or doping is changed based on GaN having a different refractive index from GaN. In this case, ion implantation or plasma doping uses reactive ions, and at least one of Si, Te, Zn, Mg, Ca, Ar, Be, O, Au, Ti, C, H, He, Si, Al, In, and B. Ion implant or dope reactive ions.
A transparent electrode layer is formed after the layer formed by ion implantation or plasma doping. Thereafter, n and p electrodes are formed to form a light emitting diode.
From the p-GaN layer to the n-GaN layer, an active layer having a nano structure or a micro structure forms a single chip structure that is independent of each other to emit light.
Between the fabricated nanostructures using a plasma doping method to form a structure with a different refractive index.
One of conical or triangular, square, hexagonal structures, and the nano- or micro-structured active region emits the upper front light emitting light from the side of the light emitting area.
When light escapes to the outside, total internal reflection occurs due to the difference in refractive index between ion implantation or plasma-doped portion, and light is emitted to the p-GaN portion, which is able to escape without being destroyed by the internal reflection. It has the feature to manufacture a diode.
The structure of the light emitting diode according to the present invention will be described in more detail. In a light emitting diode including a substrate and an active layer formed between an n-GaN layer and a p-GaN layer, the light emitting diode has a structure of a general light emitting diode, and the nano Or a pattern is formed using a micro mask.
When fabricating the above structure, the remaining parts except nano mask or micro masked part should be in the form of insulated with high refractive index by using ion implantation or plasma doping method.
In addition, the ion implanted or plasma doped part should be formed of an insulator, and the insulating layer should not be shorted in the epi state because the nano structure or the micro structure is insulated in the Epi state.
In the epi structure manufactured by ion implantation or plasma doping method, the current should flow through the upper p-GaN part where the insulating layer is not formed by ion implantation or plasma doping method using a transparent electrode.
Light is generated in the fabricated light emitting area, and the generated light must have a larger escape area of the active layer than a conventional light emitting diode.
When light escapes to the outside, total internal reflection occurs due to the difference in refractive index between ion implantation or plasma-doped portion, and light is emitted to the p-GaN portion, which is able to escape without being destroyed by the internal reflection. It has the feature to manufacture a diode.
As described above, the present invention has been described by way of limited embodiments and drawings, but the present invention is not limited to the above embodiments, and those skilled in the art to which the present invention pertains various modifications and variations from such descriptions. This is possible.
Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined not only by the claims below but also by the equivalents of the claims.
Claims (1)
an active layer formed between the n-GaN layer and the p-GaN layer;
Light emitting diode structure comprising a and forming a pattern using a nano or micro mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100029163A KR20110109430A (en) | 2010-03-31 | 2010-03-31 | Nano light emitting diodes or micro light emitting diodes fabricated by using ion implantation and its fabricating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100029163A KR20110109430A (en) | 2010-03-31 | 2010-03-31 | Nano light emitting diodes or micro light emitting diodes fabricated by using ion implantation and its fabricating method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20110109430A true KR20110109430A (en) | 2011-10-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020100029163A KR20110109430A (en) | 2010-03-31 | 2010-03-31 | Nano light emitting diodes or micro light emitting diodes fabricated by using ion implantation and its fabricating method |
Country Status (1)
| Country | Link |
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| KR (1) | KR20110109430A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110544737A (en) * | 2019-09-12 | 2019-12-06 | 厦门乾照光电股份有限公司 | Light-emitting diode with modified region and preparation method thereof |
| CN113437189A (en) * | 2021-05-30 | 2021-09-24 | 福州大学 | Addressable nanometer LED light-emitting display array structure and preparation method thereof |
-
2010
- 2010-03-31 KR KR1020100029163A patent/KR20110109430A/en not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110544737A (en) * | 2019-09-12 | 2019-12-06 | 厦门乾照光电股份有限公司 | Light-emitting diode with modified region and preparation method thereof |
| CN113437189A (en) * | 2021-05-30 | 2021-09-24 | 福州大学 | Addressable nanometer LED light-emitting display array structure and preparation method thereof |
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