KR20110099512A - Light emitting device package and method of manufacturing the same - Google Patents

Light emitting device package and method of manufacturing the same Download PDF

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Publication number
KR20110099512A
KR20110099512A KR1020100018580A KR20100018580A KR20110099512A KR 20110099512 A KR20110099512 A KR 20110099512A KR 1020100018580 A KR1020100018580 A KR 1020100018580A KR 20100018580 A KR20100018580 A KR 20100018580A KR 20110099512 A KR20110099512 A KR 20110099512A
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KR
South Korea
Prior art keywords
light emitting
emitting device
electrodes
pair
molding member
Prior art date
Application number
KR1020100018580A
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Korean (ko)
Inventor
김정진
Original Assignee
삼성엘이디 주식회사
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Priority to KR1020100018580A priority Critical patent/KR20110099512A/en
Publication of KR20110099512A publication Critical patent/KR20110099512A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

A light emitting device package and a method of manufacturing the same are provided.
A light emitting device package according to an embodiment of the present invention includes a substrate having first and second main surfaces facing each other; A light emitting stack including a plurality of semiconductor layers stacked on a first main surface of the substrate; A pair of electrodes provided on the light emitting stack along the stacking direction of the semiconductor layer; A wavelength conversion member provided on the second main surface of the substrate; And a molding member surrounding the wavelength conversion member, the substrate, and the light emitting stack such that the surface of the wavelength conversion member parallel to the second main surface of the substrate and the ends of the pair of electrodes are exposed to the outside.

Description

Light Emitting Device Package and Method of Manufacturing The Same

The present invention relates to a light emitting device package and a method of manufacturing the same, and more particularly, to a light emitting device package having a simple structure and low cost by packaging a plurality of light emitting device chips in a wafer level state in a batch process, and a method of manufacturing the same. .

In recent years, semiconductor light emitting diodes (LEDs), for example, light emitting diodes, can generate light in the green, blue and ultraviolet regions, and have been greatly improved in brightness due to continuous technological development. It is being extended to. In particular, nitride semiconductors using nitrides such as GaN have been spotlighted as core materials of optoelectronic materials and electronic devices due to their excellent physical and chemical properties.

The light emitting device is manufactured as a package and used as a light source. In general, a light emitting device package cuts a wafer on which a semiconductor light emitting device is formed into individual light emitting device chips, and then mounts each light emitting device chip on a separate lead frame. It is manufactured using a chip level package manufacturing method for packaging.

However, such a manufacturing method requires a complicated process of bonding the completed light emitting device chip onto the lead frame, electrically connecting the lead terminal through wire bonding or flip chip bonding, and then molding the epoxy chip through an epoxy resin.

In particular, since the packaging process for each light emitting device chip is individually performed, the size of the light emitting device package is not constant, the size of the light emitting device package increases, and there is a limitation in miniaturization, and the productivity is reduced and the manufacturing cost is increased.

Disclosure of Invention An object of the present invention is to provide a light emitting device package and a method for manufacturing the same, which have the same optical characteristics, are manufactured in a simple manner, can be mass-produced, and the production cost is reduced by packaging a plurality of light emitting device chips at a wafer level. To provide.

A light emitting device package according to an embodiment of the present invention includes a substrate having first and second main surfaces facing each other; A light emitting stack including a plurality of semiconductor layers stacked on a first main surface of the substrate; A pair of electrodes provided on the light emitting stack along the stacking direction of the semiconductor layer; A wavelength conversion member provided on the second main surface of the substrate; And a molding member surrounding the wavelength conversion member, the substrate, and the light emitting stack such that the surface of the wavelength conversion member parallel to the second main surface of the substrate and the ends of the pair of electrodes are exposed to the outside.

In addition, the molding member may be formed in an asymmetrical structure such that an upper surface of which the surface of the wavelength conversion member is exposed has a larger area than a lower surface of which the ends of the pair of electrodes are exposed.

In addition, the molding member may have an inclined surface inclined at a predetermined inclination toward the lower surface from the upper surface.

In addition, the side of the molding member and the end of the pair of electrodes may further include a reflective layer provided along the lower surface.

The apparatus may further include an external connection terminal electrically connected to ends of the pair of electrodes and protruding to a lower surface of the molding member to which the ends of the pair of electrodes are exposed.

In addition, the molding member may further include a diffusion agent.

On the other hand, the method of manufacturing a light emitting device package according to an embodiment of the present invention, the step of forming a light emitting stack by growing a plurality of semiconductor layers on the wafer; Forming a wavelength conversion member on an opposite surface of the wafer on which the light emitting stack is formed; Dicing the wavelength conversion member, the wafer and the light emitting stack along a cutting line and separating the light emitting device chip into individual light emitting device chips; Sorting the separated light emitting device chips at regular intervals; Forming a molding member for collectively molding the separated light emitting device chips; And cutting each of the molded light emitting device chips.

In the forming of the light emitting stack, the semiconductor layer is grown on the wafer in the order of an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer, and the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The method may further include forming a pair of electrodes provided on the substrate.

In addition, an internal reflection layer may be further formed on the p-type nitride semiconductor layer.

In addition, the forming of the wavelength conversion member may further include grinding the surface of the wafer so that the wafer has a predetermined thickness, and then grinding the surface thereof to thin the processing.

In addition, in the aligning of the separated light emitting device chips, the light emitting device chips may be attached to and fixed at a predetermined interval on the adhesive tape through the wavelength conversion member.

In the molding of the light emitting device chip, an exposure hole may be formed to expose a pair of electrodes on each of the light emitting laminates to an upper portion of the molding member.

The method may further include forming external connection terminals electrically connected to the pair of electrodes through the exposure holes of the molding member to which the pair of electrodes are exposed.

In addition, the cutting of each of the molded light emitting device chips may be cut in a V-cut shape such that a cutting surface of the molding member has an inclined surface having a predetermined slope.

The method may further include providing a reflective layer on a surface of the molding member of each cut light emitting device chip.

According to the present invention, it is possible to mass-produce a light emitting device package having the same structure and optical properties by packaging a plurality of light emitting device chips through a batch process in a wafer level state.

In addition, the manufacturing process can be shortened, productivity is improved, and manufacturing costs are reduced.

In addition, since the packaging of the light emitting device chip is performed in the wafer level state, the size of the light emitting device package can be reduced, thereby making it easy to miniaturize.

1 is a cross-sectional view showing a light emitting device package according to an embodiment of the present invention.
2 to 7 are steps illustrating a method of manufacturing the light emitting device package of FIG.

A light emitting device package and a method for manufacturing the same according to an embodiment of the present invention will be described with reference to the drawings.

However, embodiments of the present invention may be modified in many different forms and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art.

Therefore, the shape and size of the components shown in the drawings may be exaggerated for more clear description, components having substantially the same configuration and function in the drawings will use the same reference numerals.

First, a light emitting device package according to an exemplary embodiment of the present invention will be described with reference to FIG. 1.

1 is a cross-sectional view showing a light emitting device package according to an embodiment of the present invention.

Referring to FIG. 1, a light emitting device package 1 according to an exemplary embodiment of the present invention may include a substrate 10, a light emitting stacked body 20, electrodes 31 and 32, a wavelength converting member 40, and a molding member ( 50, and may further include a reflective layer 60 provided on the surface of the molding member 50 to improve the light efficiency.

The substrate 10 may use a sapphire substrate as a growth substrate provided for growth of the nitride semiconductor layer, and has first and second main surfaces facing each other.

The light emitting stack 20 includes a plurality of semiconductor layers stacked on the first main surface of the substrate 10, and is provided on the light emitting stack 20 along the stacking direction of the semiconductor layer. A pair of electrodes 31 and 32 are included. In addition, the light emitting stack 20 has a structure in which the pair of electrodes 31 and 32 are turned upside down so as to be electrically connected to an external circuit not shown.

 The semiconductor layer may be grown on the substrate 10 in an order of an n-type nitride semiconductor layer 21, an active layer 22, and a p-type nitride semiconductor layer 23. A buffer layer, not shown, may be further provided between the substrate 10 and the n-type nitride semiconductor layer 21.

The pair of electrodes 31 and 32 are p-type electrodes 32 formed on an upper surface of the p-type nitride semiconductor layer 23 and the n exposed by etching part of the p-type nitride semiconductor layer 23. The n-type electrode 31 formed on the upper surface of the type nitride semiconductor layer 21 is included.

The p-type nitride semiconductor layer 23 may further include an internal reflection layer 62 on an upper surface thereof so that the p-type electrode 32 is exposed.

On the other hand, the wavelength conversion member 40 containing a predetermined phosphor 41 on the second main surface of the substrate 10, that is, the upper surface of the substrate 10 provided so that the light emitting stack 20 faces downward. Is provided.

The molding member 50 is provided to surround the wavelength conversion member 40, the substrate 10, and the light emitting stack 20, and the wavelength conversion member 40 parallel to the second main surface of the substrate 10. It is preferable that the surface of the) and the ends of the pair of electrodes 31 and 32 are exposed to the outside. That is, the molding member 50 is formed on the end portions of the electrodes 31 and 32 and the surface of the wavelength conversion member 40, specifically, the surface facing the second main surface of the substrate 10. Do not

In particular, the molding member 50 has an area larger than that of the lower surface 52 where the upper surface 51 of which the surface of the wavelength conversion member 40 is exposed is exposed by the ends of the pair of electrodes 31 and 32. It is formed into an asymmetrical structure. Specifically, as shown in the drawing, the molding member 50 may be formed in an inverted pyramid shape having a trapezoidal cross section, so that the side surface 53 facing the lower surface 52 from the upper surface 51 has a predetermined slope. It is possible to increase the direction angle by forming a structure having an inclined surface inclined.

Reflective layer 60 along the surface of the molding member 50, specifically, the inclined side surface 53 of the molding member 50 and the lower surface 52 of which the ends of the pair of electrodes 31 and 32 are exposed. ) May be further provided. That is, by providing the reflective layer 60 of the cup structure with an open top along the surface of the molding member 50, it is possible to improve the light extraction efficiency by increasing the reflectance.

The molding member 50 is preferably made of a transparent resin, and may contain a diffusing agent (not shown) such as TiO 2 .

External connection terminals 71 and 72 are electrically connected to ends of the pair of electrodes 31 and 32, respectively, so that the bottom surface of the molding member 50 exposes the ends of the pair of electrodes 31 and 32. 52 may be provided to protrude. Through this, it is possible to achieve electrical connection with an external circuit (not shown) by a flip chip bonding method.

As such, the light emitting device package 1 according to the present exemplary embodiment includes a molding member 50 to surround the light emitting stack 20 formed on the substrate 10, and has an upper surface and a lower surface with an asymmetric structure, thereby providing light efficiency. As well as this improvement, the lead terminal and the housing member or the support substrate used in the conventional package structure are unnecessary, which is advantageous in miniaturization and has an excellent effect of reducing the cost.

Meanwhile, a method of manufacturing the light emitting device package according to the present invention will be described with reference to FIGS. 2 to 7.

2 to 7 are steps illustrating a method of manufacturing the light emitting device package of FIG.

First, referring to FIG. 2, a plurality of semiconductor layers are grown on a wafer 10 to form a light emitting stack 20. The light emitting stack 20 is provided on the wafer 10 in a wafer level state before singulating from the wafer 10 to individual semiconductor light emitting device chips.

The semiconductor layer constituting the luminescent laminate 20 may be formed of a nitride-based semiconductor material by metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or hybrid vapor deposition (Hybride Vapor). It can be prepared by growing on the wafer 10 through a known deposition process such as Phase Epitaxy (HVPE).

The light emitting stack 20 has a structure in which an n-type nitride semiconductor layer 21, an active layer 22, and a p-type nitride semiconductor layer 23 sequentially formed on the wafer 10 are stacked. The n-type electrode 31 and the p-type electrode 32 are formed on the mesa-etched n-type nitride semiconductor layer 21 and the p-type nitride semiconductor layer 23 to face upwards. In this case, a buffer layer not shown may be further provided between the n-type nitride semiconductor layer 21 and the wafer 10. In addition, an internal reflection layer 62 may be further formed on the p-type nitride semiconductor layer 23.

Next, as shown in FIG. 3, the wavelength conversion member 40 is formed on the opposite surface of the wafer 10 on which the light emitting stack 20 is formed. The wavelength conversion member 40 may be formed by coating a resin containing the phosphor 41 or by laminating it in a thin film form.

The resin is made of a transparent resin without yellowing for a long time even at a high temperature, such as a silicone resin or an epoxy resin. As the phosphor 41 contained in the resin, an organic, inorganic powder phosphor or a quantum dot phosphor may be used. Then, if necessary, a solvent may be contained to adjust the concentration of the phosphor.

As described above, the light emitting stacked structure 20 provided in the wafer level state is singulated prior to singulation, unlike the fluorescent layers being individually formed through the packaging process after singulating through individual dicing as before. It is formed collectively in the state.

Meanwhile, before forming the wavelength conversion member 40 on the surface of the wafer 10, the opposite surface of the wafer 10 is ground so that the wafer 10 has a predetermined thickness, and then the surface is polished and thinned. It may further comprise a step. Through this, the thickness of the package can be made thinner and easier to miniaturize.

Next, as shown in FIG. 4, the wavelength conversion member 40, the wafer 10, and the light emitting stack 20 are integrally diced along the cutting line L to separate the individual light emitting device chips 1a. . Each of the separated light emitting device chips 1a is attached to the adhesive tape 80 at regular intervals and sorted. In this case, the surface of the wavelength conversion member 40 is attached and fixed on the adhesive tape 80 so that the ends of the electrodes 31 and 32 of each light emitting device chip 1a face upwards. The intervals g between the chips 1a are all arranged to be spaced apart at the same interval.

Next, a molding member 50 for molding the light emitting device chip 1a by molding is formed by injecting a translucent resin onto the adhesive tape 80 through a dispenser not shown as shown in FIG. 5. At this time, the ends of the pair of electrodes 31 and 32 on each of the light emitting device chips 1a are not covered by the molding member 50 and exposed to the outside so as to be exposed to the outside. Form C).

The exposure hole C may be formed by partially removing the molding member 50 on the end of the n-type electrode 31 and the end of the p-type electrode 32 through a photolithography process. Or it may be formed by molding except the end of the n-type electrode 31 and the end of the p-type electrode (32).

Accordingly, the molding member 50 has a light emitting device chip 1a except for the surface of the wavelength conversion member 40 attached to the adhesive tape 80 and the ends of the pair of electrodes 31 and 32. It is provided to surround the wavelength conversion member 40, the substrate 10 and the light emitting laminated body 20 along the gap (g).

The molding member 50 is preferably made of a transparent resin and may contain a diffusing agent such as TiO 2 .

Next, as shown in FIG. 6, the respective light emitting device chips 1a may be cut in a V-cut form along the distance g between the light emitting device chips 1a to form each of the molding members 50. The cut surface has an inclined surface of a predetermined slope.

In this case, each of the molding members 50 is in contact with the adhesive tape 80 and the surface where the surface of the wavelength conversion member 40 is exposed is larger than the surface where the ends of the pair of electrodes 31 and 32 are exposed. It is formed in an asymmetrical structure to have a. Specifically, as shown in the drawing, the molding member 50 may be formed in a pyramid shape having a trapezoidal cross section, and thus, the side having a cut surface is formed in a structure having an inclined surface inclined with a predetermined inclination toward the top.

In addition, a reflective layer 60 may be further provided on a surface of the cut molding member 50. That is, the reflective layer 60 may be provided along the surface of the molding member 50, specifically, the inclined side surface of the molding member 50 and the surface where the end portions of the pair of electrodes 31 and 32 are exposed. Can be. The reflective layer 60 may be formed by coating Al, Ag, or other metal having high reflection efficiency or by attaching a thin film.

That is, by providing the reflective structure 60 of the cup structure with an open top along the surface of the molding member 50, it is possible to increase the directivity angle and increase the reflectance to improve the light extraction efficiency.

In addition, external connection terminals 71 and 72 electrically connected to the electrodes 31 and 32 are respectively provided in the exposure hole C of the molding member 50 to which the pair of electrodes 31 and 32 are exposed. It is formed to be exposed to the outside of the molding member (50).

The external connection terminals 71 and 72 may be formed by filling the exposure hole C using solder or a conductive paste, and may be exposed to the surface of the molding member 50, such as a lighting device not shown. It can be electrically connected with an external circuit through flip chip bonding.

In this case, the reflective layers 60 positioned between the external connection terminals 71 and 72 are separated from each other by etching or the like so that the n-type electrode 31 and the p-type electrode 32 are electrically separated from each other.

Next, as shown in FIG. 7, the adhesive tape 80 is removed and separated into individual light emitting device packages 1. Therefore, it is possible to mass produce a light emitting device package having the same package structure and optical characteristics.

10 ....... Substrate, Wafer 20 ....... Light Emitting Stack
21 ....... n-type nitride semiconductor layer 22 ....... Active layer
23 ....... p type nitride semiconductor layer 31 ....... n type electrode
32 ....... p-type electrode 40 ....... wavelength conversion member
41 ....... Phosphor 50 ....... molding member
60 ....... Reflective layer 71,72 .... External connection terminal

Claims (15)

A substrate having first and second major surfaces facing each other;
A light emitting stack including a plurality of semiconductor layers stacked on a first main surface of the substrate;
A pair of electrodes provided on the light emitting stack along the stacking direction of the semiconductor layer;
A wavelength conversion member provided on the second main surface of the substrate; And
A molding member surrounding the wavelength conversion member, the substrate, and the light emitting stack such that the surface of the wavelength conversion member parallel to the second main surface of the substrate and the ends of the pair of electrodes are exposed to the outside;
Light emitting device package comprising.
The method of claim 1,
The molding member has a light emitting device package, characterized in that the upper surface is exposed to the surface of the wavelength conversion member is formed in an asymmetric structure so as to have a larger area than the lower surface is exposed the end of the pair of electrodes.
The method of claim 2,
And the molding member has an inclined surface that is inclined at a predetermined inclination from the upper surface to the lower surface.
The method according to claim 1 or 2,
Light emitting device package further comprises a reflective layer provided along the bottom surface of the molding member and the end of the pair of electrodes exposed.
The method of claim 1,
And an external connection terminal electrically connected to ends of the pair of electrodes, the external connection terminals protruding from a lower surface of the molding member to which the ends of the pair of electrodes are exposed.
The method of claim 1,
The molding member package further comprises a diffusion agent.
Forming a light emitting stack by growing a plurality of semiconductor layers on the wafer;
Forming a wavelength conversion member on an opposite surface of the wafer on which the light emitting stack is formed;
Dicing the wavelength conversion member, the wafer and the light emitting stack along a cutting line and separating the light emitting device chip into individual light emitting device chips;
Sorting the separated light emitting device chips at regular intervals;
Forming a molding member for collectively molding the separated light emitting device chips; And
Cutting each of the molded light emitting device chips;
Method of manufacturing a light emitting device package comprising a.
The method of claim 7, wherein
In the forming of the light emitting stack, the semiconductor layer is grown on the wafer in the order of an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer, and on the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. Method of manufacturing a light emitting device package, characterized in that it further comprises the step of forming a pair of electrodes each provided.
The method of claim 8,
The method of manufacturing a light emitting device package, characterized in that further forming an internal reflection layer on the p-type nitride semiconductor layer.
The method of claim 7, wherein
The forming of the wavelength converting member may further include grinding the surface of the wafer such that the wafer has a predetermined thickness, and then grinding the surface to thin the wafer.
The method of claim 7, wherein
Aligning each of the separated light emitting device chip is a method of manufacturing a light emitting device package, characterized in that by fixing each light emitting device chip on the adhesive tape at a predetermined interval through a wavelength conversion member.
The method of claim 8,
The molding of the light emitting device chip may include forming an exposure hole to expose a pair of electrodes on each of the light emitting laminates to an upper portion of the molding member.
The method of claim 12,
And forming an external connection terminal electrically connected to each of the pair of electrodes through the exposure hole of the molding member to which the pair of electrodes are exposed.
The method of claim 7, wherein
The cutting of each of the molded light emitting device chips is a method of manufacturing a light emitting device package, characterized in that the cutting surface of the molding member is cut in a V-cut (V-cut) shape to have a slope of a predetermined slope.
The method of claim 7, wherein
The method of manufacturing a light emitting device package, characterized in that it further comprises the step of providing a reflective layer on the surface of the molding member of each of the light emitting device chip.
KR1020100018580A 2010-03-02 2010-03-02 Light emitting device package and method of manufacturing the same KR20110099512A (en)

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KR20130105313A (en) * 2012-03-14 2013-09-25 삼성전자주식회사 Light emitting device package and method of manufacturing the same
KR101403636B1 (en) * 2012-09-05 2014-06-05 주식회사 세미콘라이트 Semiconductor light emimitting device
KR101461154B1 (en) * 2012-08-24 2014-11-12 주식회사 씨티랩 Method of manufacutruing semiconductor device structure
KR101504331B1 (en) * 2013-03-04 2015-03-19 삼성전자주식회사 Light emitting device package and package substrate
KR20150037217A (en) * 2013-09-30 2015-04-08 서울반도체 주식회사 Light emitting device and method of fabricating the same
WO2015160091A1 (en) * 2014-04-16 2015-10-22 박진성 Wafer level chip scale light emitting diode package
KR20160084562A (en) * 2015-01-05 2016-07-14 삼성전자주식회사 Semiconductor light emitting device package and method for manufacturing the same
KR20160106146A (en) * 2014-01-08 2016-09-09 코닌클리케 필립스 엔.브이. Wavelength converted semiconductor light emitting device
KR20170045188A (en) * 2017-04-19 2017-04-26 주식회사 세미콘라이트 Semiconductor Light Emitting Device And Method of Manufacturing the same
US10411175B2 (en) 2012-03-14 2019-09-10 Samsung Electronics Co., Ltd. Light emitting element package and method of manufacturing the same
KR20190108207A (en) * 2011-08-09 2019-09-23 에피스타 코포레이션 Optoelectronic component and manufacturing method therefor
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KR20190108207A (en) * 2011-08-09 2019-09-23 에피스타 코포레이션 Optoelectronic component and manufacturing method therefor
KR20130105313A (en) * 2012-03-14 2013-09-25 삼성전자주식회사 Light emitting device package and method of manufacturing the same
US10411175B2 (en) 2012-03-14 2019-09-10 Samsung Electronics Co., Ltd. Light emitting element package and method of manufacturing the same
KR101461154B1 (en) * 2012-08-24 2014-11-12 주식회사 씨티랩 Method of manufacutruing semiconductor device structure
KR101403636B1 (en) * 2012-09-05 2014-06-05 주식회사 세미콘라이트 Semiconductor light emimitting device
US9705041B2 (en) 2013-03-04 2017-07-11 Samsung Electronics Co., Ltd Light emitting device packages and methods of forming the same
KR101504331B1 (en) * 2013-03-04 2015-03-19 삼성전자주식회사 Light emitting device package and package substrate
KR20150037217A (en) * 2013-09-30 2015-04-08 서울반도체 주식회사 Light emitting device and method of fabricating the same
KR20160106146A (en) * 2014-01-08 2016-09-09 코닌클리케 필립스 엔.브이. Wavelength converted semiconductor light emitting device
WO2015160091A1 (en) * 2014-04-16 2015-10-22 박진성 Wafer level chip scale light emitting diode package
KR20160084562A (en) * 2015-01-05 2016-07-14 삼성전자주식회사 Semiconductor light emitting device package and method for manufacturing the same
KR20170045188A (en) * 2017-04-19 2017-04-26 주식회사 세미콘라이트 Semiconductor Light Emitting Device And Method of Manufacturing the same
KR20190117174A (en) * 2018-04-06 2019-10-16 엘지이노텍 주식회사 Semiconductor Package

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