KR20110099488A - A controlling system of ingot growing and an ingot grower including the same - Google Patents
A controlling system of ingot growing and an ingot grower including the same Download PDFInfo
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- KR20110099488A KR20110099488A KR1020100018545A KR20100018545A KR20110099488A KR 20110099488 A KR20110099488 A KR 20110099488A KR 1020100018545 A KR1020100018545 A KR 1020100018545A KR 20100018545 A KR20100018545 A KR 20100018545A KR 20110099488 A KR20110099488 A KR 20110099488A
- Authority
- KR
- South Korea
- Prior art keywords
- ingot
- seed
- ingot growth
- control system
- laser displacement
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Embodiments relate to an ingot growth control system and an ingot growth apparatus including the same.
Ingot growth control system according to the embodiment may include a laser displacement measuring sensor provided in the chamber to directly measure the ingot growth rate or the length of the ingot.
Description
Embodiments relate to an ingot growth control system and an ingot growth apparatus including the same.
For the manufacture of wafers, single crystal silicon is grown in the form of ingots.
Wafer quality is directly influenced by the quality of silicon ingots, which requires advanced process control techniques from growing single crystal ingots.
The Czochralski crystal growth method is mainly used to grow silicon single crystal ingots. The most important factors that directly affect the quality of single crystals grown using this method are the growth rate (V) of the crystal and the temperature gradient at the liquid phase ( It is known as V / G, which is the ratio of G), and therefore it is important to control V / G to the target trajectory value set over the entire period of crystal growth.
Meanwhile, in the conventional ingot growth apparatus, the AGC (Automatic Growth Control) is in charge of allowing the pulling speed to follow the target set value.
The AGC receives the current pulling speed information and compares it with the set lifting speed target value and sends out feedback control action by the appropriate control logic. This signal is combined with the target temperature trajectory signal which acts as a feedforward controller to ATC (Automatic Temperature Control). By adjusting the thin setpoint value, you can follow the set target trajectory. At the same time, the pulling speed is assigned as an operating variable of the ADC (Automatic Diameter Control) that controls the diameter of the ingot, so that it is adjusted by the operation of AGC in the long period while showing short-term fluctuation by the ADC control operation.
As a result, how closely the pulling speed can follow the target trajectory that is set throughout the crystal growth process is directly related to the control performance of the AGC, and it is particularly important to accurately identify the pulling speed of the ingot.
On the other hand, according to the prior art in order to measure the ingot pulling speed and the length of the ingot by measuring the rotation angle of the shaft (shaft) using the encoder (Encoder) by measuring the pulling speed and the length of the ingot and have.
However, according to the related art, as the ingot pulling speed and the length of the ingot are measured by an indirect measuring method, an error in the ingot pulling speed and the length of the ingot occurs as the seed cable increases due to the chamber temperature and the ingot load. There is a problem.
The error of the ingot pulling speed and the measurement of the length of the ingot acts as an important factor in the variation of the quality of the ingot and the wafer and adversely affects the productivity.
In particular, the control of the ingot pulling speed becomes more important as the process becomes large diameter-defect free, and it is important for the product quality in the large-diameter-defect-free production process whether the pulling speed can accurately follow a given target trajectory through the entire crystal growth process. Becomes
In addition, in the related art, the actual length is compared with the target length just before ingot production, and when a large error occurs, the factor of the controller (PLC) is corrected. We are going through trial and error to find the factor.
Embodiments provide an ingot growth control system capable of precisely measuring and controlling the growth rate and the length of an ingot during an ingot growth process and an ingot growth apparatus including the same.
Ingot growth control system according to the embodiment may include a laser displacement measuring sensor provided in the chamber to directly measure the ingot growth rate or the length of the ingot.
In addition, the ingot growth apparatus according to the embodiment comprises a chamber including a crucible; A pulling means including a seed chuck to which a seed is mounted, for raising an ingot growing in the crucible; It may include; a growth control system that can directly measure the ingot growth rate or the length of the ingot including a laser displacement sensor provided in the chamber.
According to the ingot growth control system according to the embodiment and the ingot growth apparatus including the same, the error can be minimized by directly measuring the ingot pulling speed and the ingot length using a laser displacement sensor, thereby improving the product quality. .
In addition, according to the embodiment, it is possible to control feedback of the seed pulling speed by using the laser displacement sensor.
In addition, according to the embodiment, since it uses direct measurement data on the ingot pulling speed and the ingot length, there is no need to undergo trial and error to find the PLC factor value, and reduce the error by measuring the ingot length directly. Can increase productivity.
1 is a cross-sectional view of the ingot growth apparatus according to the embodiment.
2 is a partially enlarged view of the ingot growth apparatus according to the embodiment.
3 is a conceptual illustration of an ingot growth control system according to an embodiment.
Hereinafter, an ingot growth control system and an ingot growth apparatus including the same will be described.
In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.
In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.
(Example)
1 is a cross-sectional view of an ingot growth apparatus according to an embodiment.
The silicon single crystal
The
In addition, the silicon single crystal ingot manufacturing apparatus may include support means 150 for supporting, rotating and raising the
The
A
The embodiment may include a
The seed S is fixed to the lower end of the
In more detail, the
The
In addition, the support means 150 includes a support part for supporting the
Embodiments provide an ingot growth control system capable of precisely measuring and controlling the growth rate and the length of an ingot during an ingot growth process and an ingot growth apparatus including the same.
To this end, the
2 is an enlarged view of a portion A of the ingot growth apparatus according to the embodiment.
Ingot growth control system and an ingot growth apparatus including the same according to the embodiment may include a laser
For example, as shown in FIG. 1, the first distance between the
According to the embodiment, as the seed pulling speed and the ingot length are directly measured, an error caused by the length of the
In an embodiment, the laser
The embodiment can directly measure the ingot pulling speed and the ingot length through the laser
According to the ingot growth control system according to the embodiment and the ingot growth apparatus including the same, the error can be minimized by directly measuring the ingot pulling speed and the ingot length using a laser displacement sensor, thereby improving the product quality. .
The laser
In an embodiment, the laser
For example, the
For example, an embodiment may use a sus (SUS) or a silicon wafer as the
For example, when the silicon wafer is used as the
On the other hand, according to the embodiment a projection (not shown) is formed on the side of the
3 is a conceptual illustration of an ingot growth control system according to an embodiment.
The ingot growth control system according to the embodiment includes a pulling speed controller (PLC) 210, sets the pulling speed in the
According to the ingot growth control system according to the embodiment and the ingot growth apparatus including the same, the error can be minimized by directly measuring the ingot pulling speed and the ingot length using a laser displacement sensor, thereby improving the product quality. .
In addition, according to the embodiment, it is possible to control feedback of the seed pulling speed by using the laser displacement sensor.
In addition, according to the embodiment, since it uses direct measurement data on the ingot pulling speed and the ingot length, there is no need to undergo trial and error to find the PLC factor value, and reduce the error by measuring the ingot length directly. Can increase productivity.
The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.
In addition, the above description has been made with reference to the embodiments, which are merely examples and are not intended to limit the embodiments, and those skilled in the art to which the embodiments belong may not be exemplified above without departing from the essential characteristics of the embodiments. It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.
Claims (8)
The laser displacement measuring sensor
An ingot growth control system installed on at least one of the outside, the inside, and the outside surface of the chamber.
The laser displacement measuring sensor,
An ingot growth control system formed above the pulling chamber outside the chamber.
The laser displacement measuring sensor,
Ingot growth control system for directly measuring the ingot growth rate or the length of the ingot by measuring the distance to the top surface of the seed chuck (seed) is mounted (seed).
The laser displacement measuring sensor,
Ingot growth control system for directly measuring the ingot growth rate or the length of the ingot by measuring the distance to the protrusion of the side of the seed chuck (seed chuck) is mounted seed.
The seed chuck ingot growth control system including a reflective metal layer formed on the upper surface.
The reflective metal layer,
Ingot growth control system comprising a silicon wafer.
A pulling means including a seed chuck to which a seed is mounted, for raising an ingot growing in the crucible;
Ingot growth apparatus comprising a; ingot growth control system of any one of claims 1 to 7.
Priority Applications (1)
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KR1020100018545A KR101275377B1 (en) | 2010-03-02 | 2010-03-02 | A controlling system of Ingot Growing and an Ingot Grower including the same |
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KR1020100018545A KR101275377B1 (en) | 2010-03-02 | 2010-03-02 | A controlling system of Ingot Growing and an Ingot Grower including the same |
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KR20110099488A true KR20110099488A (en) | 2011-09-08 |
KR101275377B1 KR101275377B1 (en) | 2013-06-14 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210011145A (en) * | 2019-07-22 | 2021-02-01 | 에스케이실트론 주식회사 | Driving unit measuring apparatus and silicon single crystal growing apparatus having same |
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JPH0785489B2 (en) * | 1991-02-08 | 1995-09-13 | 信越半導体株式会社 | Single crystal diameter measurement method |
JP4333851B2 (en) * | 1998-07-17 | 2009-09-16 | Sumco Techxiv株式会社 | Single crystal pulling apparatus and pulling method |
US8012255B2 (en) * | 2008-07-31 | 2011-09-06 | Sumco Phoenix Corporation | Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210011145A (en) * | 2019-07-22 | 2021-02-01 | 에스케이실트론 주식회사 | Driving unit measuring apparatus and silicon single crystal growing apparatus having same |
US10920338B1 (en) | 2019-07-22 | 2021-02-16 | Sk Siltron Co., Ltd. | Driving unit measuring apparatus and silicon crystal growing apparatus having same |
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