KR20110095782A - Temperature control device in a fixed device of large caliber gaas single crystal growth - Google Patents

Temperature control device in a fixed device of large caliber gaas single crystal growth Download PDF

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KR20110095782A
KR20110095782A KR1020100015434A KR20100015434A KR20110095782A KR 20110095782 A KR20110095782 A KR 20110095782A KR 1020100015434 A KR1020100015434 A KR 1020100015434A KR 20100015434 A KR20100015434 A KR 20100015434A KR 20110095782 A KR20110095782 A KR 20110095782A
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South Korea
Prior art keywords
single crystal
temperature controller
temperature
crystal growth
graphite heater
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KR1020100015434A
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Korean (ko)
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송재윤
김재식
정현석
오명환
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네오세미테크 주식회사
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Priority to KR1020100015434A priority Critical patent/KR20110095782A/en
Publication of KR20110095782A publication Critical patent/KR20110095782A/en

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: A temperature controller fixed type device in a GaAs single crystal growing apparatus is provided to improve the yield of a single crystal by growing the single crystal at a constant temperature. CONSTITUTION: Cold water flows in a chamber(101) to prevent deformation due to high temperature and pressure in a growing furnace. A quartz crucible receives GaAs solutions and boron oxide that is a liquid encapsulant for the GaAs solutions. A graphite heater(107) heats the quartz crucible. A heat insulator insulates heat from the graphite heater. A temperature controller controls the temperature by controlling the output of the graphite heater. A rubber ring maintains the vacuum and high pressure when a chamber and a temperature controller are mounted.

Description

대구경 갈륨비소 단결정 성장 장치에서의 온도 제어기 고정형 장치{Temperature control device in a fixed device of large caliber GaAs single crystal growth}Temperature control device in a large-diameter gallium arsenide single crystal growth device {Temperature control device in a fixed device of large caliber GaAs single crystal growth}

본 발명은 대구경 갈륨아세나이드 단결정 성장 장치에 관한 것으로, 초크랄스키 방법에 의해 갈륨아세나이드 단결정이 성장될 때 필요한 온도 제어에 관한 장치이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a large-diameter gallium arsenide single crystal growth apparatus, and is an apparatus for temperature control required when gallium arsenide single crystal is grown by the Czochralski method.

갈륨아세나이드 단결정 성장의 방법으로, 석영 도가니에 용융된 융액으로부터 결정을 성장시키면서 끌어올리는 쵸크랄스키법이 널리 알려져 있다. 이 쵸크랄스키법은, 석영 도가니에 원료를 장입하고 발열체를 이용하여 가열하여 용융시킴으로써 결정 융액을 만든 다음, 이 결정 융액에 단결정 종자를 접촉시켜 서서히 인상시키면서 원하는 지름을 가지는 단결정 인곳을 성장시키는 방법이다. 원료의 융액 이후 성장이 끝나기 까지 도가니의 온도를 제어하기 위해 온도 제어기를 발열체와 가까운 곳에 설치한다.As a method of gallium arsenide single crystal growth, the Czochralski method which raises a crystal | crystallization from the melt melted in a quartz crucible is known widely. In this Czochralski method, a raw material is charged into a quartz crucible, heated and melted using a heating element to form a crystalline melt, and then a single crystal seed is brought into contact with the crystalline melt and gradually raised to grow a single crystal ingot having a desired diameter. to be. The temperature controller is installed close to the heating element to control the temperature of the crucible until the end of growth after melting of the raw material.

쵸크랄스키법에 의한 갈륨아세나이드 단결정 성장에 있어, 항상 일정한 온도에서 성장이 이루어져야 양산이 용이하며, 수율 증대를 가져 올 수 있으나, 현재 사용되는 장치에서는 일정한 온도를 구현하기 어려워 이를 해결하기 위해 본 장치를 고안하였다.In the growth of gallium arsenide single crystal by the Czochralski method, it is easy to mass-produce when the growth is always performed at a constant temperature, and the yield can be increased. The device was designed.

상기에서 기술한 문제점을 해결하기 위하여, 온도 제어기의 끝부분이 발열체와 항상 일정한 거리를 유지 할 수 있으며, 장치의 분리 후 다시 결합할 때 항상 같은 지점에 장착이 되게 고정형으로 제작한다.In order to solve the problems described above, the end of the temperature controller can always maintain a constant distance with the heating element, and when the device is recombined after separation of the device is manufactured to be fixed to always be mounted at the same point.

본 장치의 사용으로 단결정 성장이 일정한 온도 구역에서 이루어져, 성장의 재현성 및 수율 증대를 이룰 수 있다.The use of this device allows single crystal growth to occur in a constant temperature range, resulting in increased reproducibility and yield.

도면은 장비에 본 장치가 장착된 것으로 그 모양과 장착위치를 도식적으로 보여 준다.The figure shows the device equipped with the device and shows its shape and mounting position.

본 발명의 장치는 도면을 통하며 그 형상과 장착 위치를 기술하며, 결합 및 분리가 간단하고, 발열체와의 거리를 항상 일정하게 유지하기 위해 온도 제어기의 위치가 고정형이 되게 한다.The device of the present invention describes the shape and mounting position of the device through the drawings, the coupling and disengagement is simple, and the position of the temperature controller is fixed to maintain a constant distance from the heating element at all times.

101 : 챔버 102 : 시드
103 : 열단열재 104 : 단결정 잉곳
105 : 산화붕소 용융액 106 : 갈륨-비소 용융액
107 : 흑연 히터 108 : 석영도가니 지지대
201 : 온도제어기 202 : 온도제어기 고정장치
203 : 고무재질의 링101 chamber 102 seed
103: thermal insulation material 104: single crystal ingot
105: boron oxide melt 106: gallium arsenide melt
107: graphite heater 108: quartz crucible support
201: temperature controller 202: temperature controller fixing device
203: rubber ring

Claims (4)

성장로 내부의 고압과 고온에 의한 변형 방지을 위해 수냉이 흐르는 챔버와
갈륨-비소 용융액과, 해당 갈륨-비소 용융액에 대한 액체봉지제인 산화붕소를 담기 위한 석영도가니와;
상기 석영도가니의 테두리 둘레에서 상기 석영도가니를 가열하기 위한 흑연 히터와;
상기 흑연히터에서 발생하는 열을 단열시켜주는 열 단열재와;
상기 흑연히터의 출력량을 제어하여 온도를 제어하는 온도 제어기와
상기 온도 제어기를 분리 및 장착 진행시에 같은 위치에서 고정이 되도록 하여 단결정 성장이 일정한 온도 구역에서 이루어져, 성장의 재현성 및 수율 증대을 할 수 있는 단결정 성장 장치.Water-cooled chamber to prevent deformation by high pressure and high temperature
A quartz crucible for containing a gallium arsenide melt and boron oxide as a liquid encapsulating agent for the gallium arsenide melt;
A graphite heater for heating the quartz crucible around an edge of the quartz crucible;
A heat insulating material for insulating heat generated from the graphite heater;
A temperature controller for controlling the temperature by controlling the output amount of the graphite heater;
Single crystal growth apparatus that can be fixed in the same position when the temperature controller is separated and mounted progress in a single temperature region, thereby increasing the reproducibility and yield of growth. 제1항에 있어서,
온도제어기 장치의 분해 및 결함이 용이하게 제작된 단결정 성장 장치.
The method of claim 1,
Single crystal growth device that can be easily disassembled and defective in temperature controller.
제1항에 있어서, 챔버와 온도제어기 장착 시에 진공과 고압 유지를 위해 고무 재질의 링을 사용하는 단결정 성장 장치.The single crystal growth apparatus of claim 1, wherein a rubber ring is used to maintain vacuum and high pressure when the chamber and the temperature controller are mounted. 제1항에 있어서, 온도제어기의 위치를 조정 할 수 있는 고정 장치를 가지고 있는 단결정 성장 장치.
The single crystal growth apparatus according to claim 1, further comprising a fixing device capable of adjusting the position of the temperature controller.
KR1020100015434A 2010-02-19 2010-02-19 Temperature control device in a fixed device of large caliber gaas single crystal growth KR20110095782A (en)

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