KR20110094556A - Light emitting diode and method for fabricating the same - Google Patents

Light emitting diode and method for fabricating the same Download PDF

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Publication number
KR20110094556A
KR20110094556A KR1020100014019A KR20100014019A KR20110094556A KR 20110094556 A KR20110094556 A KR 20110094556A KR 1020100014019 A KR1020100014019 A KR 1020100014019A KR 20100014019 A KR20100014019 A KR 20100014019A KR 20110094556 A KR20110094556 A KR 20110094556A
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South Korea
Prior art keywords
film
light emitting
semiconductor layer
emitting diode
type semiconductor
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KR1020100014019A
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Korean (ko)
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박성주
박태영
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광주과학기술원
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The present invention relates to a light emitting diode having a high resistance to reverse ESD and a method of manufacturing the same, using a light transmitting electrode in which a unit stacked film having a 2DEG effect is stacked, and the light emitting diode of the present invention comprises an n-type semiconductor layer and a p A light emitting structure having a semiconductor layer; And a light transmitting electrode on the p-type semiconductor layer having a unit stacked film having a structure in which two or more films are stacked.

Description

Light emitting diode and method for manufacturing same

The present invention relates to a light emitting diode and a method of manufacturing the same, and more particularly, to a light emitting diode having a high resistance to reverse ESD by using a light transmitting electrode of the laminated unit unit film having a 2DEG effect and a method of manufacturing the same. will be.

In general, a conventional gallium nitride-based light emitting diode has a mesa structure in which a buffer layer, an n-type GaN-based cladding layer, an active layer, and a p-type GaN-based cladding layer are stacked on a sapphire substrate, which is an insulating substrate, and a p-type GaN-based cladding. The transparent electrode and the p-side electrode are sequentially stacked on the layer, and the n-side electrode is formed on the n-type cladding layer exposed by mesa etching. In gallium nitride-based light emitting diodes, holes coming from the P-side electrode and electrons coming from the n-side electrode recombine in the active layer to emit light corresponding to the energy bandgap of the active layer material composition.

Such gallium nitride-based light emitting diodes are generally vulnerable to electrostatic discharge (ESD) despite the fact that the energy band gap is quite large. That is, when exposed to electrostatic discharge, its function is completely lost or a potential defect can occur, resulting in reduced lifetime or malfunction of the device. In general, when exposed to forward ESD stress in the light emitting diode, the current flows out well to prevent the breakdown by static electricity to a certain level. However, when exposed to reverse ESD stress, most of them are exposed to reverse ESD stress. It does not escape the current, causing destruction.

SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a light emitting diode having improved reverse ESD characteristics by applying a light transmitting electrode having a maximum 2DEG effect and a method of manufacturing the same.

In order to solve the above technical problem, the light emitting diode of the present invention includes a light emitting structure having an n-type semiconductor layer and a p-type semiconductor layer; And a light transmitting electrode on the p-type semiconductor layer having a unit stacked film having a structure in which two or more films are stacked.

The unit stacked film may include a first film made of an oxide semiconductor material and a second film made of a material having an electron affinity greater than that of the first film.

The unit laminated film may further include a metal film on the second film made of a metal material having an electron affinity greater than that of the second film.

The metal film may be any one selected from Ni, Au, Pt, and alloys thereof, and the metal film preferably has a thickness of 0.1 nm to 1 μm.

The first film may be any one selected from NiO, ITO, CIO, and MIO, and the thickness of the first film may be 0.1 nm to 1 μm.

It is preferable that the lowest 1st film | membrane of the said unit laminated film makes ohmic contact with the said p-type semiconductor layer.

The second film may be any one selected from IZO, AgO, SnO, and InO, and the thickness of the second film is preferably 0.1 nm to 1 μm.

The light transmissive electrode may be stacked up to 100 unit stacked layers, and the first layer of the lowest unit stacked layer of the light transmissive electrode may make an ohmic contact with the p-type semiconductor layer.

In addition, the method of manufacturing a light emitting diode of the present invention comprises the steps of forming a light emitting structure having an n-type semiconductor layer and a p-type semiconductor layer; And forming a light-transmitting electrode by forming a unit stacked film in which two or more films are stacked on the p-type semiconductor layer.

The forming of the light transmitting electrode may include forming a first film made of an oxide semiconductor material; And forming a unit layer film by forming a second film made of a material having an electron affinity greater than the first film on the first film.

The forming of the light transmitting electrode may further include forming a metal film formed of a metal material having an electron affinity greater than that of the second film on the second film.

As described above, according to the present invention, a light emitting diode having a high resistance to reverse ESD and a method of manufacturing the same may be provided by using a light transmitting electrode in which a unit laminated film having a 2DEG effect is stacked.

1 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.
2A to 2C are cross-sectional views illustrating a method of manufacturing a light emitting diode according to an embodiment of the present invention.
3 is a view for explaining the electron affinity relationship of the materials used in the light transmitting electrode of the light emitting diode according to an embodiment of the present invention.
4 is a graph of IV characteristics of a general light emitting diode and a light emitting diode according to an embodiment of the present invention;
4 is a graph illustrating reverse IV characteristics of a general light emitting diode and a light emitting diode according to an exemplary embodiment of the present invention.
6 is a characteristic graph of reverse ESD of a light emitting diode according to an embodiment of the present invention.

The features and acts of the present invention will become apparent from the embodiments described below with reference to the accompanying drawings.

The detailed description set forth below in connection with the appended drawings is made with the intention of describing preferred embodiments of the invention, and does not represent the only forms in which the invention may be practiced. It should be noted that the same and equivalent functions included in the spirit or scope of the present invention may be achieved by other embodiments. In addition, certain features disclosed in the drawings are enlarged for ease of description, and the drawings and their components are not necessarily drawn to scale. However, those skilled in the art will readily understand these details. In addition, the same reference numerals are used for the same components in the drawings, and redundant description of the same components is omitted.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.

Referring to FIG. 1, a light emitting diode according to an embodiment of the present invention includes a light emitting structure 20 emitting light by recombination of electrons and holes, and a light emitting structure according to electrostatic discharge (ESD) on the light emitting structure 20. And a light transmitting electrode 30 for preventing the destruction or operation error of the 20.

In more detail, the light emitting structure 20 is formed on the substrate 10.

The substrate 10 may be made of any one selected from Al 2 O 3 (sapphire), SiC, ZnO, Si, GaAs, LiAl 2 O 3 , InP, BN, AIN, GaN, and equivalents thereof, preferably Al 2 O 3 .

The buffer layer 11 may be interposed between the substrate 10 and the light emitting structure 20 to mitigate lattice mismatch between GaN, which is a main material of the light emitting structure 20, and the substrate 10. The buffer layer 11 may be formed of at least one selected from SiC, ZnO, Si, GaAs, NCO, BN, AIN, GaN, and equivalents thereof, in which impurities having a polarity may not be doped or implanted. It may be made of GaN that is not doped or implanted.

The light emitting structure 20 is one of the electroluminescent bodies formed on the substrate 10 to emit energy emitted when the electrons and holes supplied from the outside are recombined to the outside in the form of light, and the n-type semiconductor layer ( 21 and a p-type semiconductor layer 23 and an active layer 22 interposed between the n-type semiconductor layer 21 and the p-type semiconductor layer 23.

The n-type semiconductor layer 21 and the p-type semiconductor layer 23 of the light emitting structure 20 are doped layers having opposite polarities between the n-type doped and the p-type doped. That is, any one of the n-type semiconductor layer 21 and the p-type semiconductor layer 23, for example, the n-type semiconductor layer 21 is a semiconductor layer doped or implanted with n-type impurities, the other, for example For example, the p-type semiconductor layer 23 is a p-type doped or implanted semiconductor layer.

In addition, the active layer 22 is a layer for emitting light emitted from the recombination of electrons and holes supplied from the n-type semiconductor layer 21 and p-type semiconductor layer 23, a quantum dot structure or multi-quantum It may have a multiple quantum wells structure. The active layer 22 emits wavelength light corresponding to an energy gap when the electrons and holes are recombined with each other. For example, when the energy gap is large, short wavelength light (ultraviolet light) may be emitted. When the energy gap is small, long wavelength light (infrared light) may be emitted.

On the other hand, the active layer 22 may be omitted. When the active layer 22 is omitted, the n-type semiconductor layer 21 and the p-type semiconductor layer 23 form a pn junction diode. Will emit light.

The light transmitting electrode 30 includes a unit stacked film in which at least two or more films are stacked, and the unit stacked films are repeatedly stacked up to 100 times. At this time, the unit laminated film traps the current injected in the reverse direction to prevent the injection and promote diffusion. The unit lamination film includes a first film 31 made of a semiconductor oxide material and a second film 32 made of a material having a greater electron affinity than the first film 31. The metal film 33 formed on the 32 may be further provided. At this time, the metal film 33 is preferably made of a material having a greater electron affinity than the second film (32).

The first layer 31 is generally a small electron affinity, a transparent conductive oxide, preferably, the first layer 31 is NiO, ITO, copper-doped indium oxide (CIO), magnesium-doped MIOMIO indium oxide) and its equivalents. In addition, the first film 31 preferably has a thickness of 0.1 nm to 1 μm in consideration of light transmission.

The second layer 32 has a higher electron affinity than the first layer 31 and may be formed of a transparent conductive oxide. Preferably, the second layer 32 may be formed of zinc-doped indium oxide (ZIO) or IZO. (indium-doped zinc oxide), AgO, SnO, InO and the equivalent may be made of any one selected from. In addition, the second film 32, like the first film 31, preferably has a thickness of 0.1nm to 1㎛ in consideration of light transmission.

As described above, since the second film 32 has a greater electron affinity than the first film 31, the difference in electron affinity between the first film 31 and the second film 32 is used as a barrier. Will work. Therefore, even if electrons input from the outside pass through the second layer 32, the injection is delayed into the first layer 31 by the barrier.

The second film 32 has a larger work function than the first film 31. Therefore, when the injection of current is delayed at the boundary between the first film 31 and the second film 32, the current spreads in the second film 32. That is, the 2DEG (2-dimensional electron gas) effect occurs in the second film 32. Therefore, the light emitting diode of the present invention can prevent damage and destruction of the light emitting structure 20 by static electricity by the unit laminated film.

The metal layer 33 may be formed of a metal material having a greater electron affinity than the second layer 32. Preferably, the metal layer 33 is formed of any one selected from Au, Ni, Pt, and equivalents thereof. Can be. The metal film 33 has an effect of delaying the injection of current into the second film 32 due to the difference in electron affinity with the second film 32. In addition, it is preferable that the metal film 33 has a thickness of 0.1 nm to 1 μm in consideration of light transmission similarly to the first film 31 and the second film 32.

On the other hand, the first film 31 of the lowest unit stacked film forms an ohmic contact with the p-type semiconductor layer 23.

A portion of the n-type semiconductor layer 21 is exposed through etching. In addition, an exposed portion of the n-type semiconductor layer 21 and electrodes opposite to each other, that is, the first electrode 41 and the second electrode 42, are positioned on the light transmitting electrode 30. The light emitting diode according to the example is constituted. In this case, the first electrode 41 may be an n-type electrode, and the second electrode 42 may be a p-type electrode.

2A to 2C are cross-sectional views illustrating a method of manufacturing a light emitting diode according to an embodiment of the present invention.

Referring to FIG. 2A, first, a buffer layer 11 is formed on a substrate 10. The buffer layer 11 is used to mitigate lattice mismatch between GaN, which is the main material of the light emitting structure 20, and the substrate 10, and includes metal organic chemical vapor deposition (MOCVD) and metal-organic vapor-phase epitaxy (MOVPE). , HVPE (Hydride Vapor Phase Epitaxy) or may be formed by performing a method such as molecular beam epitaxy (MBE).

After the buffer layer 11 is formed, an n-type semiconductor layer 21 is formed on the buffer layer 11, an active layer 22 is formed on the n-type semiconductor layer 21, and the active layer 22 is formed. ), The p-type semiconductor layer 23 is formed to form the light emitting structure 20. In this case, the n-type semiconductor layer 21 and the p-type semiconductor layer 23 is a doped layer having polarities opposite to each other by doping or implanting n-type doping or p-type impurities.

In more detail, the n-type semiconductor layer 21 on the buffer layer 11 may be an n-type semiconductor layer doped or implanted with n-type impurities. The n-type semiconductor layer 21 is a SiC layer, ZnO layer, Si layer, GaAs layer, NCO layer, BN layer, AlN layer, GaN layer, Mg x Zn y Cd Z O layer (0≤x, y, z≤ 1) or an Al x Ga (1-x) N (0 ≦ x ≦ 1) layer. Preferably, the n-type semiconductor layer 21 may be a GaN layer or an Al x Ga (1-x) N (0≤x≤1) layer.

The active layer 22 emits energy emitted by the recombination of electrons and holes supplied from the n-type semiconductor layer 21 and the p-type semiconductor layer 23 in the form of light. The active layer 22 may have a quantum dot structure or a multiple quantum wells structure.

The p-type semiconductor layer 23 may be a semiconductor layer doped or implanted with a second type impurity, that is, a p-type impurity. The p-type semiconductor layer 23 is a SiC layer, ZnO layer, Si layer, GaAs layer, NCO layer, BN layer, AlN layer, GaN layer, Mg x Zn y Cd Z O layer (0≤x, y, z≤ 1) or an Al x Ga (1-x) N (0 ≦ x ≦ 1) layer.

Referring to FIG. 2B, after forming the light emitting structure 20, a light transmitting electrode 30 is formed on the p-type semiconductor layer 23.

In this case, the light transmitting electrode 30 is formed by stacking a unit lamination film.

Formation of the unit laminated film is as follows.

First, a first film 31 made of an oxide semiconductor material making ohmic contact with the p-type semiconductor layer 23 is formed on the p-type semiconductor layer 23.

After the first film 31 is formed, a second layer 32 made of a material having a greater electron affinity than the first film 31 is formed on the first film 31 to form a unit stacked film.

In this case, a metal film 33 made of a material having a greater electron affinity than the second film 32 may be further formed on the second film 32.

The unit laminated film is repeatedly stacked up to 100 times to form the light transmitting electrode 30.

Referring to FIG. 2C, after forming the light transmitting electrode 30, an etching process is performed to expose a portion of the n-type semiconductor layer 21.

Then, the first electrode 41 on the exposed portion of the n-type semiconductor layer 21 and the second electrode 42 on the light transmitting electrode 30 to form a according to an embodiment of the present invention Manufacture a light emitting diode.

In the present invention, for example, the light transmitting electrode 30 is formed, a part of the n-type semiconductor layer 21 is exposed, and then the first electrode 41 and the second electrode 42 are formed. Although described, the present invention is not limited thereto. That is, a method of forming the light transmitting electrode 30 after exposing a part of the n-type semiconductor layer 21 is also possible.

3 is a view for explaining the electron affinity relationship of the materials used in the light transmitting electrode of the light emitting diode according to an embodiment of the present invention.

Referring to FIG. 3, the first film 31, the second film 32, and the metal film 33 forming the unit stacked film of the light transmitting electrode of the light emitting diode according to the embodiment of the present invention may include a metal film 33, It can be seen that the electron affinity is great in the order of the second film 32 and the first film 31. That is, the difference in electron affinity between the first film 31 and the second film 32 and the difference in electron affinity between the second film 32 and the metal film 33 serve as a barrier for electrons to enter at the boundary of each film. Able to know. Thus, the injection of current at the boundary of each film is delayed.

For example, the electron affinity of NiO, which may be used as the first film 31, is 3.5 eV, and the electron affinity of ZIO, which may be used as the second film 32, is 5.2 eV, and Au may be used as the metal film 33. The electron affinity of is 5.3eV, the current injection may be delayed due to the difference of electron affinity of each film (1.7eV for NiO / ZIO, 0.1eV for ZIO / Au) at each film boundary.

In addition, it can be seen that the second film 32 has a much larger work function than the first film 31 and the metal film 33. Accordingly, it can be seen that the injection of current into the first film 31 is delayed in the second film 32, thereby spreading current.

Therefore, when the reverse ESD occurs, the light emitting diode according to the embodiment of the present invention is delayed in the injection of current due to the difference in electron affinity of each film at the boundary of each film, and due to the high work function of the second film 32. It can be seen that the diffusion of current occurs in the second layer 32 to improve the reverse ESD characteristic.

Hereinafter, preferred examples are provided to aid the understanding of the present invention. However, the following experimental examples are only for helping understanding of the present invention, and the present invention is not limited to the following experimental examples.

Experimental Example

The light emitting diode according to the embodiment of the present invention is configured as follows to check the electrical characteristics.

On the sapphire substrate, n-type GaN doped with silicon with n-type semiconductor layer 21 is formed to a thickness of 2 μm, and 3 nm InGaN and 7 nm GaN are repeatedly formed with active layer 22 five times, The p-type GaN doped with Mg is formed in the p-type semiconductor layer 23 to a thickness of 0.2 μm.

Then, a unit laminated film 30 having a 3 nm NiO film as the first film 31, a 3 nm ZIO film as the second film 32, and a 3 nm Au film as the metal film 33 was stacked. The light-transmitting electrode is formed by lamination once, and the n-type electrode 41 is formed by the lamination film of 30 nm Ti film and the 80 nm Al film, and the p-type electrode 42 is formed by the lamination film of 30 nm Ni film and 80 nm Al film. Configured.

Comparative example

A general light emitting diode is configured as follows to check electrical characteristics.

On the sapphire substrate, n-type GaN doped with silicon with n-type semiconductor layer 21 is formed to a thickness of 2 μm, and 3 nm InGaN and 7 nm GaN are repeatedly formed with active layer 22 five times, The p-type GaN doped with Mg is formed in the p-type semiconductor layer 23 to a thickness of 0.2 μm.

A 5 nm Ni film and a 5 nm Au film are laminated to form a light transmitting electrode. An n-type electrode 41 is formed as a lamination film of a 30 nm Ti film and an 80 nm Al film, and a p-type electrode is formed of a 30 nm Ni film and an 80 nm Al film. It consisted of (42).

4 is a graph showing I-V characteristics of a general light emitting diode and a light emitting diode according to an exemplary embodiment of the present invention.

Referring to FIG. 4, it can be seen that the driving voltage of the LED according to the embodiment of the present invention is increased by about 0.5 eV compared to the driving voltage of the general LED. This is attributable to the resistivity of the second film in the light emitting diode using the light transmitting electrode in which the unit laminated film composed of the first film, the second film, and the metal film of the present invention is laminated as compared to the light emitting diode using the light transmitting electrode. . When the second film is composed of a 3 nm ZIO film and a metal film 3 nm Au film, the resistivity of the second film reaches 10 -3占 cm, and the driving voltage of the light emitting diode increases.

However, an increase in driving voltage of about 0.5 eV in the light emitting diode is a change in driving voltage that is not a big consideration in using the light emitting diode.

5 is a graph illustrating reverse I-V characteristics of a general light emitting diode and a light emitting diode according to an exemplary embodiment of the present invention.

Referring to FIG. 5, it can be seen that the light emitting diode according to the exemplary embodiment of the present invention has a large decrease in reverse current compared to a general light emitting diode.

This is due to the light transmitting electrode applied to the light emitting diode according to the embodiment of the present invention. In other words, in the unit laminated film composed of the first film, the second film and the metal film, the injection of the current is delayed at the boundary of the cornea, and the diffusion of the current occurs in the second film.

Therefore, the light transmitting electrode of the light emitting diode according to the embodiment of the present invention serves to delay and interrupt the flow of reverse current, thereby improving resistance to reverse ESD.

6 is a characteristic graph of reverse ESD of a light emitting diode according to an exemplary embodiment of the present invention.

Referring to FIG. 6, it can be seen that in the light emitting diode according to the embodiment of the present invention, the leakage current increases rapidly at −4 kV, and the device is destroyed. However, typical light emitting diodes are destroyed at about −0.3 kV or less.

Therefore, it can be seen that the reverse ESD characteristic of the LED according to the embodiment of the present invention is greatly improved.

As described above, the light emitting diode of the present invention has a unit stack of the same type as the first film 31 / the second film 32 or the first film 31 / the second film 32 / the metal film 33. By applying the light transmitting electrode 30 formed by stacking the films, it can be seen that not only the forward ESD characteristics but also the reverse ESD characteristics are improved.

10; Substrate 11; Buffer layer
20; Light emitting structure 21; First semiconductor layer
22; Active layer 23; Second semiconductor layer
30; Light transmitting electrode 31; The first act
32; Second film 33; Metal film
41; First electrode 42; Second electrode

Claims (18)

a light emitting structure comprising an n-type semiconductor layer and a p-type semiconductor layer; And
And a light transmitting electrode on the p-type semiconductor layer having a unit stacked film having a structure in which two or more films are stacked. The method of claim 1,
The unit laminated film
A light emitting diode comprising a first film made of an oxide semiconductor material and a second film made of a material having a greater electron affinity than the first film. The method of claim 2,
And the unit lamination film further comprises a metal film on the second film made of a metal material having an electron affinity greater than that of the second film. The method of claim 3, wherein
The metal film is a light emitting diode, characterized in that any one selected from Ni, Au, Pt and alloys thereof. The method of claim 3, wherein
The thickness of the metal film is a light emitting diode, characterized in that from 0.1nm to 1㎛. The method of claim 2,
The first film is any one selected from NiO, ITO, CIO and MIO. The method of claim 2,
The thickness of the first film is a light emitting diode, characterized in that 0.1nm to 1㎛. The method of claim 2,
The lowermost first film of the unit stacked film makes an ohmic contact with the p-type semiconductor layer. The method of claim 2,
The second film is a light emitting diode, characterized in that any one selected from IZO, AgO, SnO and InO. The method of claim 2,
The thickness of the second film is a light emitting diode, characterized in that 0.1nm to 1㎛. The method of claim 2,
The light transmitting electrode is a light emitting diode, characterized in that the unit laminated film is laminated 2 to 100 times. 12. The method of claim 11,
The first film of the lowermost unit laminated film of the light transmitting electrode makes an ohmic contact with the p-type semiconductor layer. forming a light emitting structure having an n-type semiconductor layer and a p-type semiconductor layer; And
And forming a light-transmitting electrode by forming a unit stacked film having two or more films stacked on the p-type semiconductor layer. The method of claim 13,
Forming the light transmitting electrode
Forming a first film made of an oxide semiconductor material; And
And forming a unit layer film by forming a second film made of a material having a higher electron affinity than the first film on the first film. The method of claim 14,
Forming the light transmitting electrode
And forming a metal film made of a metal material having an electron affinity than the second film on the second film. 16. The method of claim 15,
The metal film is any one selected from Ni, Au, Pt and alloys thereof. The method of claim 14,
Forming the light transmitting electrode
A method of manufacturing a light emitting diode, characterized in that the unit laminated film is laminated 2 to 100 times. The method of claim 17,
The first film of the lowermost unit laminated film of the light transmitting electrode makes an ohmic contact with the p-type semiconductor layer.

KR1020100014019A 2010-02-17 2010-02-17 Light emitting diode and method for fabricating the same KR20110094556A (en)

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