KR20110086220A - Apparatus for plasma surface treatment - Google Patents

Apparatus for plasma surface treatment Download PDF

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Publication number
KR20110086220A
KR20110086220A KR1020100005833A KR20100005833A KR20110086220A KR 20110086220 A KR20110086220 A KR 20110086220A KR 1020100005833 A KR1020100005833 A KR 1020100005833A KR 20100005833 A KR20100005833 A KR 20100005833A KR 20110086220 A KR20110086220 A KR 20110086220A
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South Korea
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plasma
surface treatment
rotating
treatment apparatus
fine particles
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KR1020100005833A
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Korean (ko)
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이제원
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인제대학교 산학협력단
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Priority to KR1020100005833A priority Critical patent/KR20110086220A/en
Publication of KR20110086220A publication Critical patent/KR20110086220A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/223—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating specially adapted for coating particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/02—Permanent magnets [PM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma surface treatment apparatus, and more particularly, to a plasma surface treatment apparatus capable of surface treatment by exposing the surface to plasma more uniformly by spatially moving a surface treatment object in a reaction chamber during plasma application. It is about.
According to the present invention, in the plasma surface treatment apparatus for generating a plasma by using the gas supply device and the plasma generating device, and then using the same to treat the surface of the fine particles, the inlet and discharge to which the fine particles as the surface treatment object is introduced A reaction chamber having an outlet configured to be at least one end of which is fixed in a cylindrical shape and a rotating part rotating the central axis of the cylinder as a rotation axis in a state in which the fixing part is sealed; And first driving means connected to the rotating part to support and rotate the rotating part.
In the plasma surface treatment apparatus according to the present invention, fine particle substrates such as fiber / powder / capsule phase are evenly dispersed by the driving means during plasma application. Therefore, the plasma surface treatment of the fine particles can be more uniformly and efficiently.

Figure P1020100005833

Description

Plasma surface treatment equipment {Apparatus for plasma surface treatment}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma surface treatment apparatus, and more particularly, to a plasma surface treatment apparatus capable of surface treatment by exposing the surface to plasma more uniformly by spatially moving a surface treatment object in a reaction chamber during plasma application. It is about.

Plasma means ionized gas. Discharge by using electrical energy to a gas composed of atoms or molecules forms a plasma composed of electrons, ions, decomposed gases, photons, and the like.

Surface treatment using such plasma is a plasma surface treatment method. The plasma surface treatment method is a surface treatment method in which a predetermined source gas such as oxygen is converted into plasma gas, and then reacted with the surface of the object to be treated physically and chemically to modify the surface thereof.

Surface treatments used throughout the present specification include grafting, crosslinking, dissociation, surface modification, etching, and deposition.

The surface treatment method using the plasma has the advantage that the surface can be treated more uniformly and precisely than the wet method, and is easy to control. In addition, since the plasma surface treatment method uses gas such as oxygen and argon, there is an advantage that the generation of pollutants is almost less than that of the wet surface treatment method.

Hereinafter, the surface treatment apparatus by plasma is demonstrated schematically.

The plasma surface treatment apparatus may be classified into a capacitively coupled plasma method and an inductively coupled plasma method according to the type of plasma generating electrode. Among these, widely used is a capacitive coupling method, which is called a capacitively coupled plasma generator.

This capacitively coupled plasma generator utilizes the principle of charge storage of a capacitor and opposes two electrodes inside a chamber to apply high frequency power, low frequency power, direct current power, or time-modulated power to one electrode. It is structured to be able to do it. The other electrode is grounded. Alternatively, the other electrode may be grounded through a combination of a capacitor, a coil (inductor), and a capacitor and a coil.

These parallel plate electrode structures accelerate charged particles such as electrons and ions by means of an electrostatic field between two electrodes, and the plasma is reacted by the collision of charged particles and charged particles, or charged particles and electrodes. Create and maintain.

In addition to this high frequency power, DC power, pulsed DC power, and microwave power may be used to generate the plasma.

In addition, the surface of the object can be treated by selecting a vacuum or atmospheric pressure atmosphere as necessary.

Even with the advantages of the plasma surface treatment described above, it is not easy to uniformly treat the fiber / powder / capsule particles using plasma. This is because all surfaces of the material must be homogeneously exposed to the plasma in order for the plasma to react uniformly with the surface of fine particles comprising fibers / powders / capsules.

Conventionally, like the surface treatment of a thin film, the base material was put on the sample support and the surface of the fine particle was plasma-surface-treated. However, powders / capsules have a wider surface area and are more reactive than thin film materials. As a result, the fine particles of the powder / capsules tend to clump together to lower the surface energy, becoming one large cluster. When the clustered powder / capsules are subjected to plasma surface treatment in a condition where the surface position of the sample exposed to the plasma is fixed as in the conventional thin film surface treatment, the plasma reacts only with the exposed surface, so that each particle of the powder / capsules It becomes difficult to give a homogeneous and efficient plasma treatment over the entire surface. The fibers are also generally linear, so they are easily entangled and clumped together, making it difficult to achieve a uniform surface finish.

In order to solve this problem, a method of surface treatment of plasma was developed while floating the fine powder using gas. However, since the powder has a particle size distribution, when the powder is suspended and conveyed at a constant gas flow rate, the smaller the particle size is faster. The time to pass through the plasma zone is short, and the larger the particle size is, the slower the time is to pass and the longer the time to pass, there is a problem that non-uniformity occurs in the plasma (plasma) treatment of the whole powder. Japanese Patent Laid-Open Nos. 6-228739, 7-68382, and 7-328427 disclose the above-described inventions.

Thus, the present invention allows the fine particles such as fibers / powders / capsules to be separated in the process of moving in space by vibrating, rotating, etc. using a driving element during the plasma surface treatment, and as a result the surface is more uniformly plasma In order to increase the plasma surface treatment efficiency.

The present invention is to improve the above-mentioned conventional problems, according to the present invention, after generating a plasma by using a gas supply device and a plasma generating device, using the plasma surface treatment apparatus for treating the surface of the fine particles using the same The rotary part includes an inlet through which fine particles, which are surface treatment objects, and an outlet are discharged, and at least one end of which is fixed in a cylindrical shape, and a rotating part rotating the central axis of the cylinder as a rotating shaft while the fixing part is sealed. A reaction chamber having a; And first driving means connected to the rotating part to support and rotate the rotating part.

In addition, there is provided a plasma surface treatment apparatus further comprising a first dispersing means extending from the rotating part toward the fixing part to disperse the fine particles.

In addition, the second dispersing means is installed so as to rotate in the reaction chamber to disperse the fine particles; And a second driving means for supporting and rotating the second dispersing means.

In addition, there is provided a plasma surface treatment apparatus further comprising a vibration means connected to the second dispersion means to vibrate the second dispersion means.

In the plasma surface treatment apparatus according to the present invention, fine particle substrates such as fiber / powder / capsule phase are evenly dispersed by the driving means during plasma application. Therefore, the plasma surface treatment of the fine particles can be more uniformly and efficiently.

1 is a schematic diagram of a plasma surface treatment apparatus according to a first embodiment of the present invention.
2 is a schematic diagram of a plasma surface treatment apparatus according to a second embodiment of the present invention.
3 is a schematic diagram of a plasma surface treatment apparatus according to a third embodiment of the present invention.
4 is a schematic diagram of a plasma surface treatment apparatus according to a fourth embodiment of the present invention.

Hereinafter, a plasma surface treatment apparatus according to an embodiment of the present invention will be described with reference to the accompanying drawings. Embodiments herein are for the purpose of describing the invention only and are not intended to limit the scope thereof.

1 is a schematic diagram of a plasma surface treatment apparatus according to a first embodiment of the present invention. Referring to FIG. 1, the plasma surface treatment apparatus according to the first embodiment of the present invention includes a plasma generator 10, a gas supply device 20, a reaction chamber 30, an exhaust unit 60, and a controller 70. It includes.

The plasma generator 10 includes a power source 11, an impedance matching circuit 13, and a plasma generating electrode 15. Plasma generator 10 is not particularly limited, and both capacitive coupling and inductive coupling may be used. In addition, even in the case of an inductively coupled plasma processing apparatus, when power is not applied to the induction coil, it may be used as a capacitively coupled type, and may be used. An example of such an inductively coupled plasma processing apparatus may be KR10-2009-0039103 (application number) filed by the present applicant (therefore, all of the contents disclosed in the patent application KR10-2009-0039103 (application number) Incorporated as the content of the invention specification). In addition to the inductively coupled plasma apparatus, any dense plasma source may be used.

The power source 11 is not particularly limited, and conventional power sources such as high frequency, direct current, pulsed direct current, and microwaves can be used. Plasma power supplies usually use a high frequency power source of about 1 to 10,000 W, preferably about 1 to 1,000 W.

The plasma generating electrode 15 is provided inside the reaction chamber 30 and is connected to the power supply 11 via the impedance matching circuit 13. The plasma generating electrode 15 is electrically insulated from the reaction chamber 30 by an insulator.

The gas supply device 20 is for supplying gas for plasma generation into the reaction chamber 30, and includes a gas supply line 21, a mass flow meter 23, a gas tank 25, and It consists of the vaporizer | carburetor 27.

The gas may be used by directly connecting a gas such as oxygen to the gas supply line 21 using the gas tank 25 or by vaporizing a liquid or solid substance into the vaporizer 27. The gas can be controlled by the gas flow regulator 23 to control the pressure and flow.

The gas may be a gas containing an oxygen component such as air, O 2 , N 2 O, etc .; A gas containing a fluorine component such as CF 4 and SF 6 ; A gas containing a chlorine component such as Cl 2 and BCl 3 ; An inert gas such as Ar, N 2 may be used alone or in combination.

The reaction chamber 30 is a space for treating the surface of the object to be treated using plasma while accommodating and dispersing fine particles such as fibers / powder / capsules as the object to be processed. The reaction chamber 30 is made of a plastic or ceramic dielectric or a conductor containing stainless steel according to the type of object to be treated. In the case of using an insulator, plasma can be generated by attaching the plasma generating electrode 15 to which the high frequency power is applied, as in the present embodiment, in the reaction chamber 30. When the conductor is used as the reaction chamber 30, the plasma may be generated by directly applying power to the reaction chamber 30 by using the reaction chamber 30 itself as a plasma generating electrode. That is, the reaction chamber 30 may serve as a plasma generating electrode.

The internal pressure of the reaction chamber 30 may be atmospheric pressure, or may be in a vacuum state that provides an advantageous environment when using reactive gases such as O 2 and SF 6 .

The reaction chamber 30 includes a fixed part 31 and a pair of rotating parts 32 provided to rotate on both ends of the fixed part 31. The fixing part 31 has a cylinder shape in which both ends are open, and an inlet 311 and an outlet 312 into which fine particles, which are surface treatment objects, are introduced. The gas supply line 21 and the exhaust line 42 are connected to the fixing part 31, and the power supply 11 and the plasma generating electrode 15 are connected to each other through a feedthrough 313 installed at the fixing part 31. Connected.

The rotating part 32 is provided in both ends of the fixing part 31, and rotates the central axis of the fixing part 31 to a rotating shaft. Between the rotary part 32 and the fixing part 31, a rotary feed through 33, which is a sealing device for sealing, is provided.

The rotary feed through 33 has a magnetic fluid bearing 331 and a housing 336. The magnetic fluid bearing 331 is disposed between the pole piece 333 and the rotating part 32 by a magnetic field generated by the magnet 332 and the magnet 332 installed between the housing 336 and the rotating part 32. Magnetic fluid 334 disposed in a gap of the magnetic body to form a seal. Since the rotary feed through 33 using the magnetic fluid bearing 331 is a well-known technique, detailed description thereof will be omitted.

The rotating part 32 is provided with a first dispersing means 34 extending toward the fixing part 31. The first dispersing means 34 is to uniformly disperse the fine particles, and may select various types of dispersing means according to the type of the fine particles. In the present embodiment, the vortex can be generated by appropriately adjusting the shape of the first dispersing means 34 as a wing shape as necessary.

Each rotating part 32 is connected to the first driving means 40 to rotate. The first driving means 40 comprises a motor 41 and a shaft 42, each of the rotating portions 32 is connected to the motor 41 through the shaft 42, so that in the clockwise or counterclockwise direction Can rotate 360 °. Each rotary part 32 rotates in the same direction or in the opposite direction to disperse the fine particles in the reaction chamber 30 and change the exposed surface. Therefore, the surface of the microparticles can be evenly surface treated.

The motor 41 preferably rotates 1 to 5,000 times per minute, more preferably 20 to 200 times per minute.

The second dispersing means 35 is disposed in the reaction chamber 30 and is connected to the second driving means 50. The second driving means 50 includes a motor 51 and a shaft 52. The second dispersing means 35 may be connected to the motor 51 through a rotary feed through 314 installed at the lower end of the fixing part 31 of the reaction chamber 30 to perform a rotary motion. The shape of the second dispersing means 35 is appropriate, but there is no particular limitation. Rods, ribbons, needles, etc. can also be attached to the plates to enhance the rotation and vibration effects. The second dispersing means 35 rotates independently of the rotating part 32 of the chamber.

The motor 51 connected to the second dispersing means 35 preferably rotates 1 to 5,000 times per minute, more preferably 20 to 200 times per minute.

In addition, the second dispersing means 35 can vibrate. When the second dispersing means 35 rotates, the second dispersing means 35 vibrates while colliding with the rod-shaped collision means 315 extending from the fixing part 31. At this time, the shaft 52 connected to the second dispersing means 35 is preferably the flexible shaft 52.

The exhaust unit 60 is composed of a vacuum pump 61, an exhaust line 62, and a throttle valve 63. The vacuum pump 61 is for exhausting the gas in the reaction chamber 30 to form a vacuum. The vacuum pump 61 exhausts the gas in the reaction chamber 30 through the exhaust line 62 and the throttle valve 63.

The controller 70 is connected to the motors 41 and 51 for rotating the rotating part 32 and the second dispersing means 35. The controller controls the motors 41 and 51 to adjust dispersion conditions such as rotation speed, rotation direction, and rotation time of the rotation unit 32 and the second dispersion means 35. Through this, it is possible to maintain an optimal dispersion state according to the type of fine powder.

2 is a schematic diagram of a plasma surface treatment apparatus according to a second embodiment of the present invention. Since it is the same as the first embodiment except the vibration means 80 for vibrating the second dispersion means 35, only the vibration means 80 will be described in detail. The same component number is attached | subjected about the same component, and description is abbreviate | omitted.

In this embodiment, the vibration means 80 includes a motor 81, a shaft 82 coupled to the motor 81, and an eccentric cam 83 coupled to the shaft 82. The shaft 82 is inserted into the reaction chamber 30 through a rotary feedthrough 316 installed in the fixing part 31 of the reaction chamber 30. The eccentric cam 83 rotates as the motor 81 rotates and collides with the protrusion 351 of the second dispersing means 35 to vibrate the second dispersing means 35. Unlike the first embodiment, the present embodiment has an advantage that the second dispersing means 35 can be vibrated even when the second dispersing means 35 does not rotate. The motors 41, 51, and 81 that cause rotation and vibration are all connected to the controller 70. Therefore, it is possible to disperse the fine powder under the optimum conditions for the fine powder to be processed while rotating or vibrating at the same time or at the intersection.

3 is a schematic diagram of a plasma surface treatment apparatus according to a third embodiment of the present invention. Since it is the same as the first embodiment except the vibration means 90 for vibrating the second dispersion means 35, only the vibration means will be described in detail.

In the present embodiment, the vibrating means includes a vibrator 90 disposed between the fixing part 31 and the second dispersing means 35. The vibrator 90 is fixed to the inner surface of the fixing part 31 to vibrate the second dispersing means 35. As in the second embodiment, the second dispersing means 35 can be vibrated even when the second dispersing means 35 is not rotated.

4 is a schematic diagram of a plasma surface treatment apparatus according to a fourth embodiment of the present invention. The vibration of the second dispersing means 35 using the vibrator 92 is the same as that of the third embodiment. However, in the present embodiment, the shaft 52 connecting the motor 51 and the second dispersing means 35 is coupled with the hollow shaft 54, and the vibrator 92 is disposed inside the hollow shaft 54. There is a difference in vibrating the second dispersing means 35.

In the above, the embodiments of the plasma surface treatment apparatus for fine particles including the fiber / powder / capsules of the present invention have been described with reference to the drawings, but those skilled in the art to which the present invention pertains are based on the above contents. It will be possible to make various applications and modifications within the scope of the invention.

For example, it was described as sealing using a magnetic fluid bearing, but depending on the application, oil seals, bellows seals, O-rings, wilson seals, and Visco seals seals, magnetic-coupling seals, and a variety of dynamic seals are available.

10: plasma generator 20: gas supply device
30: reaction chamber 31: fixed part
32: rotary part 33: rotary feed through
34: first dispersion means 35: second dispersion means
40: first driving means 50: second driving means
60: exhaust unit 70: control unit

Claims (11)

In the plasma surface treatment apparatus for generating a plasma using a gas supply device and a plasma generator, and then using the same to treat the surface of the fine particles,
It has an inlet through which the fine particles, which are surface treatment objects, and an outlet are discharged, and having a cylinder-shaped fixing part having at least one end opened and a rotating part rotating the central axis of the cylinder as a rotating shaft in a state where the fixing part is sealed. A reaction chamber; And
And a first driving unit connected to the rotating unit to support the rotating unit and rotate the rotating unit. The method of claim 1,
And a first dispersing means extending from the rotating part toward the fixing part so as to disperse the fine particles. The method of claim 1,
Second dispersing means installed to rotate in the reaction chamber to disperse the fine particles; And
Second driving means for supporting and rotating the second dispersing means;
Plasma surface treatment apparatus further comprising a. The method of claim 3,
And vibrating means connected to said second dispersing means to vibrate said second dispersing means. The method of claim 4, wherein
The vibration means,
Plasma surface treatment apparatus, characterized in that the impact means is installed in the reaction chamber so as to collide with the rotating second dispersion means. The method of claim 4, wherein
The vibration means,
motor; A shaft penetrating the fixing part; And an eccentric cam coupled to the shaft and colliding with the second dispersing means while rotating as the motor rotates. The method of claim 4, wherein
The vibration means,
Plasma surface treatment apparatus is disposed between the fixing portion and the second dispersing means, the vibrator is fixed to the inner surface of the fixing portion so as to vibrate the second dispersing means. The method according to any one of claims 1 to 4,
Plasma surface treatment apparatus further comprising a control unit for controlling the drive means and the vibration means, respectively. The method of claim 1,
The first driving means,
Plasma surface treatment apparatus comprising a motor and a shaft connecting the rotating unit and the motor. The method of claim 3,
The second driving means,
And a shaft connecting the second dispersing means and the motor through a rotary feed through through the motor and the fixing part. The method of claim 10,
The second driving means,
Further comprising a hollow shaft for connecting the shaft and the second dispersion means,
The vibration means,
Plasma surface treatment apparatus, characterized in that the vibrator disposed in the inner hollow of the hollow shaft.
KR1020100005833A 2010-01-22 2010-01-22 Apparatus for plasma surface treatment KR20110086220A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101507532B1 (en) * 2012-12-28 2015-04-07 주식회사 선익시스템 Thin Film Deposition Apparatus with Vibrator
KR20200028689A (en) * 2018-09-07 2020-03-17 한국기초과학지원연구원 Plasma equipment for treating powder using vibration
KR20220000588A (en) * 2020-06-26 2022-01-04 한국생산기술연구원 sputtering device for coating floating fine powder and the coating method thereof
KR20220072822A (en) * 2020-11-25 2022-06-02 울산과학기술원 Plasma device for surface treatment of powder using flat filter electrode

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101507532B1 (en) * 2012-12-28 2015-04-07 주식회사 선익시스템 Thin Film Deposition Apparatus with Vibrator
KR20200028689A (en) * 2018-09-07 2020-03-17 한국기초과학지원연구원 Plasma equipment for treating powder using vibration
KR20220000588A (en) * 2020-06-26 2022-01-04 한국생산기술연구원 sputtering device for coating floating fine powder and the coating method thereof
KR20220072822A (en) * 2020-11-25 2022-06-02 울산과학기술원 Plasma device for surface treatment of powder using flat filter electrode

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