KR20110081690A - A metal organice chemicala vapor deposition apparatus having a rotary showerhead - Google Patents

Abstract

PURPOSE: A metal organic chemical vapor deposition apparatus having a rotary showerhead is provided to separate various source gases into a reaction chamber by changing the structure of a nozzle to supply a plurality of source gases. CONSTITUTION: In a metal organic chemical vapor deposition apparatus having a rotary showerhead, a predetermined process operates in a reaction chamber(100). A susceptor supports a substrate in the reaction chamber. A shower head(300) ejects at least one source gas to the susceptor respectively. A rotation driving unit(700) rotates the showerhead.

Description

A metal organice chemical vapor deposition apparatus having a rotary showerhead

The present invention relates to an organometallic chemical vapor deposition apparatus to which a rotary shower head is applied, and more particularly, to an organometallic chemical vapor deposition apparatus capable of increasing deposition uniformity by applying a rotary shower head.

In general, a semiconductor device is a deposition process for forming a thin film on a semiconductor substrate, a photo lithography process for forming a pattern on the surface of the thin film on the semiconductor substrate using a pattern of a mask or a reticle According to the pattern on the surface of the thin film, the etching is performed by repeatedly performing an etching process for selectively removing the thin film using a reaction gas or a chemical solution.

For example, a semiconductor process includes a method called chemical vapor deposition (CVD) as a method of forming a thin film of an insulating film, a metal film, an organic film, or the like on a predetermined substrate surface. Such chemical vapor deposition is a technique of depositing a desired thin film on the surface of a substrate by injecting a reactive gas into a vacuum chamber to induce a chemical reaction with suitable active and thermal energy.

Chemical vapor deposition has been developed for various types of application deposition techniques, depending on the deposition environment and additional injection sources.Plasma Enhanced Chemical Vapor Deposition (PECVD), Low Pressure CVD (LPCVD), Atmospheric Pressure CVD (APCVD), etc. .

In such chemical vapor deposition, source gas is injected and deposited on a substrate, and it is necessary to uniformly deposit a thin film on the substrate and to improve the deposition efficiency of the thin film.

SUMMARY OF THE INVENTION An object of the present invention is to provide an organometallic chemical vapor deposition apparatus capable of increasing deposition uniformity by applying a rotary shower head in chemical vapor deposition.

Problems to be solved of the present invention are not limited to the above-mentioned problems, and other tasks not mentioned will be clearly understood by those skilled in the art from the following description.

An aspect of the organometallic chemical vapor deposition apparatus using the rotary shower head of the present invention for solving the above technical problem is a process chamber in which a predetermined process is performed; A susceptor for supporting a substrate in the process chamber; A shower head each injecting one or more source gases onto the separator; And a rotation driver for rotating the shower head.

According to one embodiment of the invention, by applying a rotary shower head it is possible to increase the deposition uniformity.

In addition, by introducing a structure of the shower head to supply a plurality of source gases, it is possible to provide a variety of source gases separated into the process chamber.

In addition, a plurality of induction coils for heating the susceptor may be introduced to facilitate temperature control of the susceptor.

The effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

1 is a longitudinal sectional view of an organometallic chemical vapor deposition apparatus having a remote plasma source according to an embodiment of the present invention.
FIG. 2A is a perspective view of a shower head cut in an organometallic chemical vapor deposition apparatus having a remote plasma source in accordance with one embodiment of the present invention. FIG.
FIG. 2B is a cutaway perspective view of FIG. 2A from another angle. FIG.
3 is a view showing the supply of the source gas in the shower head in the organometallic chemical vapor deposition apparatus having a remote plasma source according to an embodiment of the present invention.
4 is a schematic view of an induction heating unit and a driving unit in an organometallic chemical vapor deposition apparatus having a remote plasma source according to an embodiment of the present invention.

Specific details of other embodiments are included in the detailed description and the drawings. Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, and only the embodiments make the disclosure of the present invention complete, and the general knowledge in the art to which the present invention belongs. It is provided to fully inform the person having the scope of the invention, which is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.

When an element is referred to as being "connected to" or "coupled to" with another element, it may be directly connected to or coupled with another element or through another element in between. This includes all cases. On the other hand, when one device is referred to as "directly connected to" or "directly coupled to" with another device indicates that no other device is intervened. Like reference numerals refer to like elements throughout. “And / or” includes each and all combinations of one or more of the items mentioned.

Although the first, second, etc. are used to describe various elements, components and / or sections, these elements, components and / or sections are of course not limited by these terms. These terms are only used to distinguish one element, component or section from another element, component or section. Therefore, the first device, the first component, or the first section mentioned below may be a second device, a second component, or a second section within the technical spirit of the present invention.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, “comprises” and / or “comprising” refers to the presence of one or more other components, steps, operations and / or elements. Or does not exclude additions.

Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification may be used in a sense that can be commonly understood by those skilled in the art. In addition, the terms defined in the commonly used dictionaries are not ideally or excessively interpreted unless they are specifically defined clearly.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Figure 1 shows a longitudinal cross-sectional view of an organometallic chemical vapor deposition apparatus having a remote plasma source according to an embodiment of the present invention.

Referring to FIG. 1, an organometallic chemical vapor deposition apparatus having a remote plasma source according to an embodiment of the present invention may include a process chamber 100, a susceptor 200, an injection unit 300, and a source gas supply unit 400. ), An induction heating unit 600, and a rotation driving unit 700.

The process chamber 100 provides a space in which a deposition process of the chemical vapor deposition apparatus is performed. For example, a process of chemical vapor deposition (CVD) may be performed by forming a thin film of an insulating film, a metal film, an organic film, or the like on a predetermined substrate surface. In this case, when organic metal vapor is thermally decomposed as a source gas and deposited as a metal compound on a substrate, a metal organic chemical vapor deposition (MOCVD) process may be performed.

The susceptor 200 generally provides a space in which the substrate is seated. For example, the susceptor 200 may be mounted on one susceptor 200 by forming a plurality of substrates in one set. The susceptor 200 may be integrally formed with the susceptor support 250 supporting the susceptor 200. The susceptor 200 may be moved up and down by vertical movement of the susceptor support 250. Meanwhile, the susceptor support part 250 may include a driving part 270 that moves or rotates the susceptor support part 250 up and down.

The shower head 300 serves to inject the source gas into the process chamber 100. The shower head 300 sprays each of the one or more source gases onto the susceptor 200 in the process chamber 100 in a separate space. The shower head 300 may include a first plate 320, a second plate 340, and a rotating body 360. The first plate 320, the second plate 340, and the rotating body 360 may be integrally formed or may be assembled together to be integrally formed. In addition, the shower head 300 may be rotated by the rotation driver 700 to be described later so that the source gas may be relatively uniformly supplied onto the substrate on the susceptor 200.

The first source gas supply unit 400 serves to supply the first source gas to the shower head 300. On the other hand, although not shown in Figure 1 may further include a second source gas supply unit (not shown) for supplying a second source gas may supply a second source gas to the shower head (300). In an embodiment of the present invention, after the first source gas and the second source gas are separated from each other and provided into the process chamber, the first source gas and the second source gas may be mixed with each other in the process chamber by rotation of the shower head 300 in the deposition process on the substrate. To improve the uniformity of the thin film. Here, the first source gas means a gas provided by the first source gas supply unit 400, and the second source gas means a gas provided by the second source gas supply unit (not shown). The first and second source gases may be used to participate in the reaction and deposit the thin film, but may also be involved in activating the reaction.

The induction heating unit 600 may include a plurality of induction coil units 620 and 640 formed concentrically on the lower end of the susceptor 200. The induction heating unit 600 may heat the susceptor 200 by applying a high frequency power having a different frequency to each of the induction coil units 620 and 640. The plurality of induction coil units 620 and 640 will be described in detail later.

The rotation driver 700 serves to rotate the shower head 300. The rotation driver 700 may rotate the rotating body 360 to the shower head 300 by mechanical driving or electrical driving. For example, the rotating body 360 can be driven by a mechanical drive such as a predetermined gear box, chain, belt, or the like. As another example, the shower head 300 may be rotated by a non-contact type by rotating the body 360 magnetically.

According to an embodiment of the present invention as described above, by rotating the shower head 300 by the rotary drive unit 700 to supply a plurality of source gases in the process chamber, the source gases are separately supplied in the process chamber Reactivity by mixing may be increased to increase the efficiency of thin film deposition.

FIG. 2A shows a cutaway perspective view of a shower head in an organometallic chemical vapor deposition apparatus with a remote plasma source in accordance with one embodiment of the invention, and FIG. 2B shows the cutaway perspective view of FIG. 2A from a different angle.

2A and 2B, the shower head 300 in the organometallic chemical vapor deposition apparatus having a remote plasma source according to an embodiment of the present invention includes a first plate 320, a second plate 340, and It may include a rotating body (360).

The rotating body 360 may be attached to the second plate 340 to rotate integrally with the first plate 320 and the second plate 340. The rotating body 360 may rotate relatively to the process chamber 100 fixed to the upper surface of the process chamber 100 in a sealed state. The rotating body 360 may further include a bearing to be rotatable in a sealed state or may rotate in conjunction with a predetermined magnetic drive unit.

The rotating body 360 may include a first supply passage 410 through which the first source gas can pass and a second supply passage 510 through which the second source gas can pass. The first source gas is supplied from the first source supply unit 400 onto the first plate 320 and the second plate 340 through the first supply passage 410, and from the second source supply unit 500 to the second source gas. The source gas may be supplied onto the first plate 320 and the second plate 340 through the second supply passage 510.

The first plate 320 and the second plate 340 may be attached between the plates to provide passages through which the plurality of source gases are moved.

The first plate 320 is a plate located at the bottom and may include a plurality of source gas injection regions on the edge. For example, the first spraying region 315 and the second spraying region 316 may be alternately disposed on the disc-shaped first plate 320. Here, the first injection region 315 represents a region in which the first source gas is injected, and may have a plurality of mesh structures or a plurality of through structures. In addition, the second injection region 316 may indicate a region in which the second source gas is injected, and the second source gas may pass through a plurality of mesh structures or a plurality of through structures. The first plate 320 may further include a cooling path 312 through which cooling water or cooling gas may pass along a predetermined path on the plate. Therefore, while maintaining a high reactivity in the process chamber 100 while supplying a high temperature source gas, it may be maintained at an appropriate temperature.

The second plate 340 is disposed on the upper end of the first plate 320 and merged with the first plate 320, and the first source gas and the second source region 315 and the second injection region 316, respectively. Provide a passageway providing two source gases. For example, the second plate 340 may be attached to contact the first plate 320 so that the first source gas may move to the first injection region 315 positioned at both sides of the cutaway view of FIG. 2. To provide a travel path 342. In addition, the second plate 340 may be attached to contact the first plate 320 to provide a movement path to allow the second source gas to move to the second injection region 316.

As described above, the first plate 320 and the second plate 340 are attached to each other so as to separate and provide the moving paths of the first source gas and the second source gas to reach the process chamber 100. While preventing the source gas and the second source gas from being mixed in advance, the reactivity may be increased under conditions matching the process conditions in the process chamber 100.

3 is a view showing the supply of the source gas in the shower head in the organometallic chemical vapor deposition apparatus having a remote plasma source according to an embodiment of the present invention.

Referring to FIG. 3, the first source gas passes through the first supply passage 410 to the center of the second plate 340 and moves to the first injection region 315 of the first plate 320 to process the chamber. May be injected into 100. For example, the first source gas may be injected into the process chamber 100 through the first path 420.

Meanwhile, the second source gas passes through the second supply passage 510, passes through the second plate 430, and moves to the second injection region 316 of the first plate 320 to process the chamber 100. Can be sprayed into. For example, the second source gas may be injected into the process chamber 100 through the second path 520.

The first plate 320 and the second plate 340 are separated into complex multilayers by separating the moving paths so that a plurality of source gases may have independent moving paths by bonding to each other, and thus, each of the first plate 320 and the second plate 340 is divided into a plurality of layers. The space efficiency may be increased by simultaneously supplying a plurality of source gases into the process chamber 100 onto a single plate, which is the first plate 320, rather than supplying the source gas.

4 shows a schematic structure of an induction heating unit and a driving unit in an organometallic chemical vapor deposition apparatus having a remote plasma source according to an embodiment of the present invention.

Referring to FIG. 4, a plurality of induction coils may be provided in an embodiment of the present invention. The first induction coil 625 may be arranged concentrically near the bottom center of the susceptor 200, such that the second induction coil 645 may be arranged concentrically near the bottom edge of the susceptor 200. have. Each of the induction coils 625 and 645 is applied with a high frequency power of different frequencies to heat different areas on the susceptor 200.

The induction heating unit 600 may include a first induction coil unit 620 for heating the center region of the susceptor 200 and a second induction coil unit 640 for heating the edge region of the susceptor 200. have. Here, the center region and the edge region refer to an approximate region on the secessor 200, and the first induction coil portion 620 and the second induction coil portion 640 may heat about some overlapping regions. .

The first induction coil unit 620 includes a first power supply unit 627 and a first induction coil 625 for applying a first high frequency power. The second induction coil unit 640 includes a second power supply unit 647 and a second induction coil 645 that apply a second high frequency power. The induction heating unit 600 may obtain a relatively uniform temperature on a large area susceptor by applying high frequency power having different frequencies to the first induction coil unit 620 and the second induction coil unit 640. However, the frequency of each high frequency power source to be applied may be determined to an appropriate value by repeated experiments or simulations.

Meanwhile, the driving unit 270 rotates the susceptor support 250 to rotate the susceptor 200. The driving unit 270 may be a driving motor (not shown) that provides a predetermined driving force. As described above, heat transfer on the susceptor 200 may be actively performed by rotating the susceptor 200 so that the substrates W placed on the susceptor 200 may have a relatively uniform temperature. Therefore, thin film deposition by organometallic chemical vapor deposition on the substrate W at a uniform temperature can be efficiently performed.

Although embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art to which the present invention pertains have various permutations, modifications, and modifications without departing from the spirit or essential features of the present invention. It is to be understood that modifications may be made and other embodiments may be embodied. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive.

100: process chamber 200: susceptor
250: susceptor support 300: shower head
320: first plate 340: second plate
400: first source gas supply unit 500: second source gas supply unit
600: induction heating unit 700: rotary drive unit

Claims (6)

A process chamber in which a predetermined process is performed;
A susceptor for supporting a substrate in the process chamber;
A shower head each injecting one or more source gases onto the separator; And
An organometallic chemical vapor deposition apparatus to which the rotary shower head is applied, comprising a rotary drive unit rotating the shower head. The method of claim 1, wherein the shower head
A first plate having a first injection zone through which the first source gas passes and a second injection zone through which the second source gas passes; And
And a second plate attached to the first plate to separate and provide a moving path between the first source gas and the second source gas. The method of claim 2, wherein the shower head
It is fixedly mounted to the second plate, and is inserted into the upper hole of the process chamber in a rotatable state, the inner surface of the first supply path of the first source gas and the second supply path of the second source gas. An organometallic chemical vapor deposition apparatus to which the rotary shower head is applied, further comprising a rotating body each provided. The method of claim 3, wherein
A plurality of the first spraying region and the second spraying region are located on an edge of the first plate,
The first supply passage forms a connection passage in the first injection region,
And the second supply passage forms a connection passage in the second spraying region. The method of claim 1,
And an induction heating unit for heating the susceptor by an induction coil at the bottom of the susceptor. The method of claim 5, wherein the induction heating unit
A first induction coil heating the center region of the susceptor by a first high frequency power source; And
And a second induction coil for heating the edge region of the susceptor by a second high frequency power source.

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