KR20110074034A - Vacuum chucking susceptor and atomic layer deposition apparatus having the same - Google Patents

Vacuum chucking susceptor and atomic layer deposition apparatus having the same Download PDF

Info

Publication number
KR20110074034A
KR20110074034A KR1020090130877A KR20090130877A KR20110074034A KR 20110074034 A KR20110074034 A KR 20110074034A KR 1020090130877 A KR1020090130877 A KR 1020090130877A KR 20090130877 A KR20090130877 A KR 20090130877A KR 20110074034 A KR20110074034 A KR 20110074034A
Authority
KR
South Korea
Prior art keywords
vacuum
susceptor
wafer
atomic layer
layer deposition
Prior art date
Application number
KR1020090130877A
Other languages
Korean (ko)
Inventor
강승익
김경준
전영수
Original Assignee
주식회사 케이씨텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 케이씨텍 filed Critical 주식회사 케이씨텍
Priority to KR1020090130877A priority Critical patent/KR20110074034A/en
Publication of KR20110074034A publication Critical patent/KR20110074034A/en

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: A vacuum chucking susceptor and an atomic layer deposition apparatus having the same are provided to reduce manufacturing costs while preventing the complexity of the device by chucking a plurality of wafers through one vacuum pump. CONSTITUTION: A process chamber(101) provides a space for performing a deposition process. A susceptor(102) is arranged within the process chamber. The Susceptor comprises a base plate(121), a pocket(123), and a chucking part(127). A shower head(103) is arranged in the upper part of the process chamber and supplies a deposition gas to the wafer(10). The deposition supply unit(104) supplies the deposition gas to the shower head.

Description

Vacuum chuck susceptor and atomic layer deposition apparatus including the same {VACUUM CHUCKING SUSCEPTOR AND ATOMIC LAYER DEPOSITION APPARATUS HAVING THE SAME}

The present invention relates to a vacuum chucking susceptor and an atomic layer deposition apparatus including the same, and more particularly, to a vacuum chucking susceptor and an atomic layer deposition apparatus including the same that can stably chuck a wafer seated on the susceptor by vacuum. It is about.

In general, in order to deposit a thin film having a predetermined thickness on a wafer such as a semiconductor wafer or glass, physical vapor deposition (PVD) using physical collision such as sputtering and chemical vapor deposition using chemical reaction ( thin film manufacturing method using chemical vapor deposition (CVD) or the like is used.

As the design rule of the semiconductor device is drastically fine, a thin film of a fine pattern is required, and the step of the region where the thin film is formed is also very large. Accordingly, the use of an atomic layer deposition (ALD) method, which is capable of forming a very fine pattern of atomic layer thickness very uniformly and has excellent stem coverage, has been increasing.

The atomic layer deposition (ALD) method is similar to the conventional chemical vapor deposition method in that it uses chemical reactions between gas molecules. However, unlike conventional chemical vapor deposition (CVD) methods injecting a plurality of gas molecules into the process chamber at the same time to deposit the reaction product generated above the wafer onto the wafer, the atomic layer deposition method processes one gaseous material. It is different in that it is injected into the chamber and then purged to leave only the physically adsorbed gas on top of the heated wafer, and then inject other gaseous materials to deposit chemical reaction products that occur only on the top of the wafer. The thin film implemented through such an atomic layer deposition method has a high step coverage characteristic and has the advantage that it is possible to implement a pure thin film having a low impurity content, which is widely attracting attention.

Meanwhile, a semi-batch type atomic layer deposition apparatus capable of simultaneously depositing thin films on a plurality of wafers is disclosed. In the conventional semi-batch type atomic layer deposition apparatus, a plurality of wafers are disposed radially along the circumferential direction on the susceptor, and as the susceptor rotates, source gas is sequentially sprayed onto the wafer to perform the deposition process.

However, as the susceptor on which the wafer is seated rotates at a high RPM, the wafer may not be stably seated on the susceptor and floats. In severe cases, the wafer may deviate from the susceptor, which causes the wafer to fail.

One object of an embodiment of the present invention for solving the above problems is a vacuum chucking susceptor capable of chucking a wafer seated on a susceptor by vacuum, and an atomic layer deposition apparatus including the same. To provide.

Another object of the present invention is to provide a vacuum chuck susceptor which does not damage a wafer by performing chucking of a wafer by a vacuum, and an atomic layer deposition apparatus including the same.

In addition, another object according to an embodiment of the present invention, by connecting a plurality of flow paths for providing a vacuum to the wafer with one vacuum pump, a vacuum chuck standing to perform the chucking of the plurality of wafers with one vacuum pump To provide a acceptor and an atomic layer deposition apparatus including the same.

Susceptor for an atomic layer deposition apparatus according to a preferred embodiment of the present invention for achieving the above object, a base plate on which a wafer is seated, a pocket provided on the upper surface of the base plate and the wafer is accommodated, and a lower surface of the pocket And a chucking portion connected to the chuck to chuck the wafer by providing a vacuum.

The chucking unit may include a vacuum hole formed under the pocket, a first vacuum channel connected to the vacuum hole and formed at the center of the susceptor, a second vacuum channel connected to the first vacuum channel, and the second vacuum channel. Includes a vacuum pump that is connected and provides a vacuum.

Preferably, a plurality of vacuum holes are provided, and the plurality of vacuum holes may be spaced apart at equal intervals in the radial direction along the circumferential direction of the pocket.

Preferably, the pockets form a disk-shaped space in which the wafer is accommodated, a plurality of pockets are disposed radially along the circumferential direction of the base plate, and a plurality of the first vacuum passages are provided to correspond to the pockets. The plurality of first vacuum passages may be connected to one second vacuum passage.

The vacuum pump is characterized by providing a high vacuum of at least 3torr or less.

In one embodiment, an atomic layer deposition apparatus includes a process chamber in which a wafer is accommodated and a deposition process is performed, a susceptor provided in the process chamber, on which a wafer is seated, and disposed on the process chamber and deposited on the wafer. And a shower head providing a gas, a deposition gas supply unit supplying a deposition gas to the shower head, and a driving unit provided below the susceptor to rotate or lift the susceptor. The susceptor includes a base plate on which a wafer is seated, a pocket provided on an upper surface of the base plate, and a chucking portion connected to a lower surface of the pocket to provide a vacuum and chucking the wafer.

Preferably, the chucking unit of the atomic layer deposition apparatus includes a vacuum hole formed in the lower portion of the pocket, a first vacuum passage connected to the vacuum hole and extending to the driving shaft, and formed in the driving shaft and connected to the first vacuum passage. A second vacuum flow passage and a vacuum pump connected to the second vacuum flow passage and providing a vacuum.

Preferably, the vacuum pump is characterized in that it can provide a lower vacuum pressure than the pressure in the process chamber.

According to the vacuum chucking susceptor and the atomic layer deposition apparatus including the same according to an embodiment of the present invention, by stably chucking the wafer seated on the susceptor by vacuum, the wafer leaves the susceptor even when the susceptor is rotated. There is an effect that can be prevented.

In addition, the vacuum chuck susceptor and the atomic layer deposition apparatus including the same according to an embodiment of the present invention have an effect of reducing defects of the wafer by not damaging the wafer by chucking the wafer by vacuum.

And, according to the vacuum chucking susceptor and the atomic layer deposition apparatus including the same according to an embodiment of the present invention, by connecting a plurality of flow paths for providing a vacuum to a wafer to one vacuum pump, one vacuum pump A plurality of wafer chuckings can be performed, resulting in a reduction in manufacturing cost and prevention of device complexity.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or limited by the embodiments. For reference, in the present description, the same numbers refer to substantially the same elements, and may be described by quoting the contents described in other drawings under the above rules, and the contents repeated or deemed apparent to those skilled in the art may be omitted.

1 is a longitudinal cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention, FIG. 2 is a plan view of a susceptor according to an embodiment of the present invention, and FIG. 3 shows forces applied to a wafer. do.

Hereinafter, an atomic layer deposition apparatus 100 according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 3.

Referring to FIG. 1, the atomic layer deposition apparatus 100 includes a process chamber 101 in which a wafer 10 is accommodated and a deposition process is performed, and a susceptor provided in the process chamber 101 to seat the wafer 10. 102, a shower head 103 provided on the process chamber 101 to provide deposition gas to the wafer 10, and a deposition gas supply unit 104 to supply deposition gas to the shower head 103.

The wafer 10 may be a silicon wafer. However, the object of the present invention is not limited to a silicon wafer, and the wafer may be a transparent substrate including glass used for a flat panel display device such as a liquid crystal display (LCD) and a plasma display panel (PDP). In addition, the wafer 10 is not limited in shape and size by drawing, and may have substantially various shapes and sizes, such as circular and rectangular plates.

The process chamber 101 accommodates the wafer 10 and provides a space in which the deposition process is performed. The process chamber 101 has a deposition gas in the susceptor 102 and the wafer 10 on which the wafer 10 is seated. Shower head 103 is provided to provide.

The susceptor 102 is provided in the process chamber 101, and a plurality of wafers 10 are seated. Here, the susceptor 102 is a semi-batch type with excellent throughput, and one surface of the wafer 10 may stand so that a deposition process may be performed by simultaneously accommodating a plurality of wafers 10. It is seated on the upper surface of the acceptor 102 and is disposed radially along the circumferential direction of the susceptor 102. For example, the susceptor 102 may be seated with six wafers 10 spaced apart from each other by a predetermined interval.

A drive shaft 125 for rotating the susceptor 102 is provided under the susceptor 102 so that the wafer 10 revolves about the center point of the susceptor 102 as the susceptor 102 rotates. do. In addition, the drive shaft 125 moves the susceptor 102 up and down a predetermined distance in the process chamber 101.

The shower head 103 is provided above the process chamber 101 to provide deposition gas to the surface of the wafer 10 seated on the susceptor 102.

The deposition gas includes a source gas containing a material constituting the thin film to be formed on the surface of the wafer 10 and a purge gas for purging the source gas. In addition, according to the present embodiment, different types of gases that react with each other on the surface of the wafer 10 to form a thin film material are used as the source gas, and as the purge gas, the source gas, the wafer 10, and the wafer 10 are used. A stable gas that does not chemically react with the thin film formed on the phase is used.

One side of the shower head 103 is connected to the deposition gas supply unit 104 for supplying the deposition gas to the shower head 103.

Hereinafter, the susceptor 102 according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 and 2.

The susceptor 102 includes a base plate 121, a pocket 123, and a chucking portion 127.

The base plate 121 is a disk-shaped plate on which the wafer 10 is to be seated. The upper surface of the base plate 121 is provided with a pocket 123 having a space in which the wafer 10 is accommodated.

The pocket 123 forms a disk-shaped space corresponding to the shape of the wafer 10, and the plurality of pockets 123 are radially disposed along the circumferential direction of the base plate 121. In this embodiment, as shown in Fig. 2, six pockets 124 are arranged at equal intervals along the circumferential direction.

A lower surface of the pocket 123 is connected to the chucking portion 127, and the chucking portion 127 provides a vacuum to the wafer 10, so that the wafer 10 is stably chucked to the pocket 123. It is the component that makes it possible.

The chucking unit 127 includes a vacuum hole 271, a first vacuum passage 273, a second vacuum passage 275, and a vacuum pump 277.

As shown in FIG. 1, the vacuum hole 271 is a flow path formed from the lower surface of the pocket 123 into the base plate 121, and stably holds the wafer 10 seated on the pocket 123. Provide a vacuum to allow chucking.

The vacuum holes 271 may be provided in plural in one pocket 123. As illustrated in FIG. 2, the plurality of vacuum holes 271 may be disposed to be radially spaced apart along the circumferential direction of the pocket 123. By this arrangement, the vacuum provided to the vacuum pump 277 is evenly transferred to the lower surface of the wafer 10, so that the wafer 10 can be chucked more stably.

In this embodiment, three vacuum holes 271 are provided, and each of the vacuum holes 271 is spaced apart along the circumferential direction at intervals of 120 degrees with the neighboring vacuum holes. Of course, in the present embodiment has been described with an example provided with three vacuum holes 271, but is not necessarily limited thereto. For example, only one vacuum hole 271 may be provided in one pocket 123, and in this case, the vacuum hole 271 may be formed at the center of the pocket 123.

The first vacuum flow path 273 is a flow path that is formed in the base plate 121 to transfer the vacuum from the vacuum pump 277 to the vacuum hole 271. One end of the first vacuum passage 273 is connected to the vacuum hole 271, and the other end thereof is connected to the second vacuum passage 275.

The first vacuum passage 273 is connected to the plurality of vacuum holes 271 and extends horizontally to the center of the base plate 121. The first vacuum passage 273 is configured with a number corresponding to the number of pockets 123. As shown in FIG. 2, in this embodiment, six first vacuum passages 273 are connected to respective vacuum holes 271 formed in six radial pockets 123 of the susceptor 102. have. That is, six first vacuum passages 273 are formed to extend in the radial direction from the center of the base plate 121. The six first vacuum passages 273 are connected to the second vacuum passages 275 formed at the center of the base plate 121.

The second vacuum flow path 275 is a flow path connected to the first vacuum flow path 273 to form a passage for transferring a vacuum from the vacuum pump 277 to the wafer 10. The second vacuum passage 275 may be formed in the driving shaft 125 and extends vertically along the driving shaft 125 from the center of the base plate 121.

One end of the second vacuum channel 275 is connected to the first vacuum channel 273, and the other end is connected to the vacuum pump 277. The vacuum pump 277 is a unit that provides a vacuum for adsorbing the wafer 10, and provides a lower vacuum pressure to the wafer 10 than the pressure in the process chamber 101.

That is, it is preferable that an environment close to a vacuum is formed in the process chamber 101 in which the deposition gas is deposited. In order to stably chuck the wafer 10 in the vacuum environment, the vacuum pump 277 is the process chamber 101. It is configured to provide a high vacuum pressure lower than the internal pressure.

Referring to FIG. 3, the wafer 10 is applied at the top of the wafer at the pressure FP in the process chamber 101, and the vacuum pressure F at the chucking portion 127 is applied to the wafer 10. In addition, the centrifugal force FC due to the rotation of the susceptor 102 acts in the radial direction, and the frictional force Ff in the opposite direction acts on the lower surface of the wafer.

In order for the wafer 10 to be chucked stably by the chucking portion 127, a vacuum pressure F lower than the pressure FP in the chamber must be provided by the vacuum pump 277. In addition, the friction force (Ff) expressed as the product of the friction coefficient of the wafer and the normal force acting on the wafer should be at least equal to the centrifugal force (FC). It is desirable to provide.

The wafer 10 may be chucked by controlling the high vacuum to occur in the vacuum pump 277, and the high vacuum of the vacuum pump 277 is released when the wafer 10 is loaded or unloaded.

By the vacuum chucking susceptor 102 and the atomic layer deposition apparatus 100 including the same, the wafer 10 can be stably seated in the pocket 123, so that the wafer can be rotated even when the susceptor 102 is rotated. Deviation from (10) can be prevented effectively.

As described above, although described with reference to the preferred embodiment of the present invention, those skilled in the art various modifications and variations of the present invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

1 is a longitudinal sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention;

2 is a plan view of a susceptor according to an embodiment of the present invention;

3 shows the force applied to the wafer.

<Explanation of symbols for the main parts of the drawings>

100: atomic layer deposition apparatus 101: process chamber

102: susceptor 103: shower head

104: deposition gas supply unit 125: drive shaft

127: chucking portion 271: vacuum hole

273: first vacuum passage 275: second vacuum passage

277: vacuum pump 10: wafer

Claims (8)

In a susceptor for an atomic layer deposition apparatus, A base plate on which the wafer is seated; A pocket provided on an upper surface of the base plate to accommodate the wafer; And A chucking part connected to a bottom surface of the pocket and providing a vacuum to chuck the wafer; Susceptor for atomic layer deposition apparatus comprising a. The method of claim 1, The chucking unit, A vacuum hole formed under the pocket; A first vacuum passage connected to the vacuum hole and formed at the center of the susceptor; A second vacuum passage connected to the first vacuum passage; And A vacuum pump connected to the second vacuum passage and providing a vacuum; Susceptor for atomic layer deposition apparatus comprising a. The method of claim 2, The vacuum holes are provided with a plurality, the plurality of vacuum holes susceptor for the atomic layer deposition apparatus, characterized in that arranged radially spaced apart along the circumferential direction of the pocket. The method of claim 3, wherein A plurality of pockets are provided, the plurality of pockets are disposed radially along the circumferential direction of the base plate, and a plurality of first vacuum passages are provided to correspond to the pockets, and the plurality of first vacuum passages are one. Susceptor for atomic layer deposition apparatus characterized in that it is connected to the second vacuum passage. The method according to any one of claims 2 to 4, The vacuum pump susceptor for an atomic layer deposition apparatus, characterized in that to provide a high vacuum of at least 3torr or less. A process chamber in which a wafer is accommodated and a deposition process is performed; A susceptor provided in the process chamber to seat a wafer; A shower head provided on the process chamber to provide deposition gas to the wafer; A deposition gas supply unit supplying a deposition gas to the shower head; And A driver provided at a lower portion of the susceptor to rotate or lift the susceptor; Including, The susceptor, A base plate on which the wafer is seated; A pocket provided on an upper surface of the base plate to accommodate the wafer; And A chucking part connected to a bottom surface of the pocket and providing a vacuum to chuck the wafer; Atomic layer deposition apparatus comprising a. The method of claim 6, The chucking unit, A vacuum hole formed under the pocket; A first vacuum passage connected to the vacuum hole and extending to the driving shaft; A second vacuum passage formed in the drive shaft and connected to the first vacuum passage; And A vacuum pump connected to the second vacuum passage and providing a vacuum; Atomic layer deposition apparatus comprising a. The method of claim 7, wherein And wherein the vacuum pump provides a vacuum pressure lower than the pressure in the process chamber.
KR1020090130877A 2009-12-24 2009-12-24 Vacuum chucking susceptor and atomic layer deposition apparatus having the same KR20110074034A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020090130877A KR20110074034A (en) 2009-12-24 2009-12-24 Vacuum chucking susceptor and atomic layer deposition apparatus having the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090130877A KR20110074034A (en) 2009-12-24 2009-12-24 Vacuum chucking susceptor and atomic layer deposition apparatus having the same

Publications (1)

Publication Number Publication Date
KR20110074034A true KR20110074034A (en) 2011-06-30

Family

ID=44404463

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090130877A KR20110074034A (en) 2009-12-24 2009-12-24 Vacuum chucking susceptor and atomic layer deposition apparatus having the same

Country Status (1)

Country Link
KR (1) KR20110074034A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014152977A1 (en) * 2013-03-14 2014-09-25 Applied Materials, Inc. Apparatus and methods for wafer chucking on a susceptor for ald

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014152977A1 (en) * 2013-03-14 2014-09-25 Applied Materials, Inc. Apparatus and methods for wafer chucking on a susceptor for ald
KR20150132843A (en) * 2013-03-14 2015-11-26 어플라이드 머티어리얼스, 인코포레이티드 Apparatus and methods for wafer chucking on a susceptor for ald
US9922860B2 (en) 2013-03-14 2018-03-20 Applied Materials, Inc. Apparatus and methods for wafer chucking on a susceptor for ALD
US11094577B2 (en) 2013-03-14 2021-08-17 Applied Materials, Inc. Apparatus and methods for wafer chucking on a susceptor for ALD
US11984343B2 (en) 2013-03-14 2024-05-14 Applied Materials, Inc. Apparatus and methods for semiconductor processing

Similar Documents

Publication Publication Date Title
US8845857B2 (en) Substrate processing apparatus
US8461062B2 (en) Substrate processing apparatus and method for manufacturing semiconductor device
US20150240357A1 (en) Substrate processing apparatus using rotatable table
US20120199067A1 (en) Film-forming apparatus
KR101786167B1 (en) Substrate processing apparatus and substrate processing method
JP2010059495A (en) Film deposition apparatus, substrate processing apparatus, film deposition method, and storage medium for storing program for executing the film deposition method
JP2010084230A (en) Film deposition apparatus, substrate process apparatus, and turntable
JP2010126797A (en) Film deposition system, semiconductor fabrication apparatus, susceptor for use in the same, program and computer readable storage medium
JP2012084598A (en) Film deposition device, film deposition method, and storage medium
TWI764225B (en) Substrate processing apparatus, manufacturing method of semiconductor device, substrate holder, and program
JP5195176B2 (en) Deposition equipment
US11214864B2 (en) Method for reducing metal contamination and film deposition apparatus
US20110309562A1 (en) Support structure and processing apparatus
JP2010135510A (en) Depositing device
KR20100003536A (en) Atomic layer deposition apparatus
TW201820512A (en) Substrate processing device and method
KR101000219B1 (en) Atomic layer deposition apparatus
KR20120048879A (en) Semi-batch type atomic layer deposition apparatus having clamp ring
US11702739B2 (en) Film deposition method and film deposition apparatus
KR101126389B1 (en) Susceptor unit for atomic layer deposition apparatus
JP2016152264A (en) Substrate holding mechanism and substrate processing device employing the same
KR20110074034A (en) Vacuum chucking susceptor and atomic layer deposition apparatus having the same
JP5527106B2 (en) Vacuum processing equipment
KR20110074044A (en) Atomic layer deposition apparatus
KR20130068718A (en) Gas injecting device and substrate processing apparatus having the same

Legal Events

Date Code Title Description
A201 Request for examination
E601 Decision to refuse application