KR20110072513A - Manufacturing method of pressure sensors and 5.1 channel microphones using flexible substrates - Google Patents

Abstract

PURPOSE: A pressure sensor, using flexible printed circuit board, and 5.1 channel microphone manufacturing method using the same are provided to miniaturize a product by simplifying an assembly process. CONSTITUTION: A pressure sensor, using flexible printed circuit board, comprises a first substrate, an electrode layer(101), a membrane film(102) and a flexible printed circuit board(103). A sensing part silicon nano wire(100) is formed in the central part of the first substrate. A silicon body is worn away until the membrane film of the sensing part is revealed. The electrode layer is formed on the first substrate which is divided into two parts based on the sensing part. The membrane film is formed in the first substrate and is coated on the first substrate as the structure of exposing the electrode layer. The flexible printed circuit board comprises a cap attached to the sensing part in order to form a cavity on the sensing part for vacuum or base pressure.

Description

Pressure sensor using flexible substrate and manufacturing method of 5.1 channel microphone using the same {Manufacturing method of pressure sensors and 5.1 channel microphones using flexible substrates}

The present invention relates to a microphone, and relates to a pressure sensor using a flexible substrate and a method of manufacturing a 5.1-channel microphone using the same.

Currently, the most commonly used types of microphones are EMC (Electret Condenser Microphone) and Condenser Microphone (Condenser Microphone).

Figure 1 is a cross-sectional view showing a pressure sensor by a conventional MEMS process, it is very important to precisely control the thickness when forming a thin Si membrane (membrane) 10 in the manufacture of the pressure sensor. This is because the range of pressure to be detected is determined according to the thickness of the Si membrane. The method of forming a Si membrane is a method of etching a substrate using a wet etching method from a silicon backside and stopping the etching when a certain thickness remains or doping an element such as boron at a certain depth of the upper part of the silicon substrate to etch it from the backside of the substrate. When the boron doping layer is encountered, the etching rate is remarkably lowered.

However, in the silicon wet etching process, the fluid flow such as the temperature of the etching solution and the circulation and agitation of the solution become important process variables. Is required, and depending on the wet etching method, there is a problem that it is almost impossible to manufacture an extremely thin silicon membrane of about 1 and 2 μm. The thicker the membrane, the more difficult it is to sense the pressure, as the membrane hardly moves in response to very small pressure changes. If the thickness of the silicon membrane can be made very thin, it can be applied to microphones that need to detect very small changes in pressure such as sound pressure, but in conventional pressure sensors using silicon membrane, the membrane is too thick. There is a problem that is not suitable to apply to the microphone.

2A to 2C are cross-sectional views showing a 5.1 channel microphone product according to the prior art.

FIG. 2A is a holophone type stereo sound device, and as shown in the drawing, by arranging five single omnidirectional microphones on a surface of a dummy head on a surface to obtain stereo sound, the smallest of the commercially available products has a small size (length). Very large, about 6 cm. 2B and 2C are ambisonic type stereo devices, in which four single directional microphones are mounted on a quadrangular pyramid-shaped structure, in which signals obtained through four primary directional acquisition microphones can be changed to 5.1 channels. The use of a directional microphone significantly reduces the size of the holophone type.

Both of the above methods have limitations in reducing the size because four to five single microphones are attached to the surface of a given structure, which means that the individual single microphones, which are already packaged, form a certain size and combine them. This is because it is difficult to miniaturize (or assemble) due to the size and wiring of the structure. Moreover, even if the size of the microphone can be made small, the difficulty of the assembly process caused by this still exists.

The present invention is to solve the problems of the prior art as described above, to form a liquid material such as polymer when forming a membrane of the pressure sensor to a certain thickness through a simple spin coating process and then to solidify (solidification) by heat treatment process The thickness of the membrane membrane is very easy to control, and the flexible sensor can be bent freely using the flexible substrate, so that the assembly process is simple and the product can be miniaturized. It provides a manufacturing method.

The present invention to achieve the above object,

A first substrate on which a silicon nanowire as a sensing unit is formed in a central portion; An electrode layer formed on the first substrate bisected on the basis of the sensing unit; A membrane film formed on the first substrate and coated with a structure exposing the electrode layer; A flexible substrate formed on the membrane film and corresponding to the electrode layer and the sensing unit, removed through a photolithography process; And a cap formed under the worn first substrate until the membrane film of the central sensing unit is exposed and attached to the sensing unit to form a cavity for vacuum or reference pressure.

The sensing unit silicon nanowires are formed in the center of the first substrate as a bridge-shaped structure, and the membrane film is formed by coating with a polymer or silicon nitride film. The coating method of the membrane film is preferably a spin coating method or a spray coating method in the case of a polymer, and the deposition using a semiconductor device in the case of a silicon nitride film.

The material constituting the flexible substrate of the pressure sensor according to the present invention uses a polymer having a high viscosity, and a portion corresponding to the electrode layer and the sensing unit of the flexible substrate is removed through a photolithography process.

Also, in order to form a reference pressure cavity in the sensing unit, the first substrate is worn so that the thickness of the membrane film is not damaged, and then the silicon formed under the nanowire under the central sensing unit is removed through a separate etching process. After attaching the cap. It is also possible to embed a dielectric between the sensing nanowire and the membrane film.

In the pressure sensor using the flexible substrate of the present invention, the sensing unit nanowires comprises a first step of forming a first thermal oxide film on a silicon substrate; Forming a column structure on the silicon substrate; A third step of forming a support pillar structure and an inverted triangle silicon structure for forming nanowires on the silicon substrate having a column structure; A fourth step of removing the first thermal oxide film; A fifth step of forming a second thermal oxide film on the silicon substrate; And a sixth step of removing the second thermal oxide film.

In particular, the sixth step is performed by wet etching using BOE (buffered oxide etchant) or dry etching using HF vapor, and controlling the cross-sectional size of the nanowire is performed by adjusting the thickness of the second thermal oxide film formation. . In addition, the support pillar structure has a structure in which both ends of the nanowires are connected, the support pillar structure and the nanowire connecting portion is characterized in that the stress is concentrated after removal of the second thermal oxide film.

In the method of manufacturing a nanowire, the second step is a dry etching, the third step is preferably wet etching using an anisotropic etching solution. The cross section of the nanowires prepared as described above is characterized by having an inverted triangle structure, and the length of the nanowires may be formed to several μm to several hundred μm.

According to another embodiment of the present invention, a first step of forming a nanowire structure as a sensing unit on the first substrate; A second step of forming an electrode layer on the first substrate bisected on the basis of the sensing unit; A third step of forming a membrane film with a structure exposing the electrode layer on the first substrate; Forming a flexible substrate on the membrane film and removing the flexible substrate in a portion corresponding to the electrode layer and the sensing unit through a photolithography process; A fifth step of forming a dummy substrate on the flexible substrate through an adhesive material; After forming the dummy substrate, a sixth step of exposing the membrane film surrounding the nanowires by abrading the lower portion of the first substrate; A seventh step of separating the dummy substrate; It provides a pressure sensor manufacturing method using a flexible substrate comprising the step of attaching a cap for forming a vacuum or reference pressure cavity below the central sensing unit of the first substrate.

The nanowire as the sensing unit of the first step may be formed as a bridge-type structure, and the membrane film of the third step may be formed by coating with a polymer or silicon nitride film and adjusting the thickness of the film according to a pressure range. You can.

In the fifth step of the adhesive material, the first substrate does not fall well during the abrasion operation, and after the abrasion process is finished, it is preferable to use a material that easily falls without a separate chemical material or process.

According to another embodiment of the present invention a plurality of pressure sensors according to claim 1 formed on a flexible substrate; A flexible microphone array for manufacturing a 5.1-channel microphone including an interface unit for connecting an external circuit and a device through a wiring process of signal lines of the plurality of pressure sensors; And a 5.1-channel microphone attached to the microphone array and including a separate capped animal, wherein a small hole is formed in the center of each side of the workpiece to allow the flexible microphone to be attached to the sensing area. A cavity is formed.

According to the present invention, since the thickness of the membrane can be precisely controlled by controlling the rotation speed of the substrate during the spin coating process, by varying the thickness of the coated membrane, a pressure range that can be used can be freely selected, and using a flexible substrate, a 5.1-channel The device can be manufactured in a form that is very useful for miniaturization in devices that require the integration of multiple microphones such as microphones, and the assembly process is very simple since the substrate can be bent freely, thus miniaturizing the product. have.

The present invention provides a semiconductor substrate comprising: a first substrate on which silicon nanowires, which are sensing portions, are formed in a central portion; An electrode layer formed on the first substrate bisected on the basis of the sensing unit; A membrane film formed on the first substrate and coated with a structure exposing the electrode layer; A flexible substrate formed on the membrane film and corresponding to the electrode layer and the sensing unit, removed through a photolithography process; And a cap formed under the worn first substrate until the membrane film of the central sensing unit is exposed, and including a cap attached to the sensing unit to form a vacuum or reference pressure in the sensing unit.

According to another embodiment of the present invention a plurality of pressure sensors according to claim 1 formed on a flexible substrate; A flexible microphone array for manufacturing a 5.1-channel microphone including an interface unit for connecting an external circuit and a device through a wiring process of signal lines of the plurality of pressure sensors; And a separate mechanical animal attached to the microphone array and capped, wherein a small hole is formed at the center of each side of the workpiece to form a cavity at the sensing portion when the flexible microphone is attached. It provides a 5.1 channel microphone.

The terms or words used in this specification and claims are not to be construed as being limited to their ordinary or dictionary meanings, and the inventors may appropriately define the concept of terms in order to best describe their invention. It should be interpreted as meaning and concept corresponding to the technical idea of the present invention based on the principle that the present invention.

Therefore, the embodiments described in the specification and the drawings shown in the drawings are only the most preferred embodiment of the present invention, and do not represent all of the technical idea of the present invention, which can be replaced at the time of the present application It should be understood that there may be various equivalents and variations.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a graph showing the distribution of piezoresistance coefficients according to the size of silicon nanowires. According to the graph, the cross-sectional area of silicon nanowires is 10 ⁴ nm ^2. If it decreases below (100nm X 100nm level in terms of square size), the longitudinal piezoresistance coefficient increases sharply while the longitudinal piezoresistance coefficient decreases rapidly, resulting in the addition of the piezoresistance coefficient. Since the value is greatly increased, it is expected that a highly sensitive sensor can be realized when a microphone and a pressure sensor are manufactured using the piezoresistive effect of silicon nanowires.

4 is a cross-sectional view illustrating a pressure sensor using a flexible substrate according to an embodiment of the present invention. The pressure sensor A includes a bridge-shaped silicon nanowire 100 floating in the air, an electrode layer 101 formed on a first substrate, a membrane film 102, a flexible substrate 103, and a cavity for forming a reference pressure. It consists of a cap 104 attached for formation.

As shown in FIG. 4, the silicon substrate is processed to fabricate a bridge-type nanowire structure 100, and then a membrane film 102 is formed thereon. The operating principle of the pressure sensor is that the membrane membrane 102 is moved when a negative pressure is applied, and the silicon nanowire 100 attached to the membrane membrane is reduced or stretched together, and mechanical stress is applied to the nanowire. The resistance of the silicon nanowire changes, that is, the piezoelectric effect is used to sense the sound pressure.

As described above, the advantage of the pressure sensor using the nanowire according to the present invention is that it can be used in a very low pressure range, such as negative pressure, since the formation of a very thin membrane, based on the pressure sensor manufacturing process using the flexible substrate 103 Flexible microphones can be manufactured, allowing the simultaneous fabrication and electrical wiring of multiple microphones on a flexible substrate.

Therefore, the device can be manufactured in a form very useful for miniaturization in devices requiring integration of several microphones, such as 5.1-channel microphones, and the assembly process is very simple since the substrate can be bent freely, thus miniaturizing the product. Advantageous is the advantage.

First, the silicon nanowire manufacturing process will be described in detail.

Figures 5a to 5f is a process chart showing step by step the silicon nanowire manufacturing process according to an embodiment of the present invention.

Referring to the drawings, a silicon wafer is manufactured by etching a silicon wafer. The first thermal oxide film is thermally oxidized deposited on a silicon substrate having a crystal structure of (100) direction (FIG. 5A), and is etched by a photolithography process. Remove the oxide film to be divided. The line width of the mask pattern for the silicon nanowires is 0.4 μm to 2 μm, and the pattern may be formed by using a photolithography process without the use of e-beam lithography.

In the silicon dry etching process, such as a deep-RIE process, the column structure 320 is formed through silicon anisotropy etching (FIG. 5B), and the etching depth of the column structure 320 is easy to transfer during the silicon nanowire transfer process described later. Adjust to the depth of

Next, the silicon substrate 300 is wet etched using the silicon anisotropic etching solution such as KOH in the formed columnar structure 320. (C) Due to the etching characteristic of the (100) crystal direction of the silicon substrate 300 through wet etching, the silicon structure 360 is formed in an inverted triangle structure having a predetermined slope in cross section.

After the silicon wet etching is completed and the oxide layer 310 is removed, the silicon substrate 300 is secondary thermally oxidized to manufacture the silicon nanowires 350 having a diameter of several tens of nm. 5D, the diameter of the silicon nanowires 350 may be adjusted to about several tens of nm by adjusting the time of the second thermal oxidation process.

Finally, the second thermal oxide film 330 formed by the second thermal oxidation of the silicon 300 is removed by a wet etching method using a buffered oxide etchant (BOE) or a dry etching method using HF vapor. Silicon nanowires 350 of several micrometers to several hundred micrometers in length having a diameter of nm are obtained. (FIG. 5E)

Next, referring to FIG. 5F, since the silicon nanowires 350 are free standing when the secondary silicon oxide film 330 is removed, the silicon nanowires 350 are removed while the second thermal oxide film 330 is removed. Both ends of the silicon nanowires 350 are formed as support pillar structures 340 to fix the wires 350 so that they are not lost or damaged. The support pillar structure 340 has a width wider than the line width of the silicon nanowires 350 so that the support pillar structure 340 remains stable on the silicon substrate 300 even after the second thermal oxide film 330 is removed.

The size of the support pillar structure 340 should be wider than the line width of the silicon nanowires 350, but it is preferable to make it as large as possible to maintain a wide contact area with the second substrate in the substrate bonding process described later. Do.

The distance between the silicon substrate 300 and the silicon nanowires 350 positioned on the substrate is preferably several tens of nm to several μm, and the distance is between the depth of the dry-etched column structure 320 and the nanowire structure 360. It is preferably determined by the degree of etching of the silicon substrate 300 through the wet etching used during formation. When the silicon nanowires 350 are used later, the silicon nanowires 350 should preferably have resistance and conductivity, and the resistance and conductivity can be adjusted according to the type and doping concentration of impurities injected into the silicon substrate 300. .

Next, a process of manufacturing a pressure sensor through an additional process to the silicon nanowire structure manufactured by the above manufacturing process will be described.

6a to 6h are step diagrams for a pressure sensor manufacturing process using silicon nanowires according to an embodiment of the present invention.

In the pressure sensor manufacturing method using the flexible substrate according to the present invention, the electrode layer 101 is formed on the substrate 50 on which the silicon nanowire bridge structures (FIGS. 6A and 100) prepared above are formed. (B) Preferably, the silicon nanowires are manufactured in the form of a bridge floating in the air, but a structure in which the silicon nanowires are not buried in the air and embedded in a dielectric material is also possible. Al, Au, etc. which are easy to form are preferable.

The polymer film is then coated to form a thin membrane film 102 and exposed a portion of the electrode through a photolithography process. 6C, the membrane film 102 is formed by coating a thin film using a polymer or silicon nitride film. However, as shown in the drawing, the electrode layer forms the membrane film so that a portion thereof is exposed. The thickness of the membrane membrane determines the range of the negative pressure to be sensed. For example, the thinner the polymer constituting the membrane membrane, the better it reacts even at a lower negative pressure. It is preferable to form to an appropriate thickness by using.

The membrane film 102 may be formed by spin coating a polymer-based material such as polyimide, and may adjust the thickness by varying the rotation speed of the substrate during spin coating. Spray coating is also possible instead of spin coating in the polymer coating. The polymer material is thermally and mechanically very stable, and chemically very stable material is used so as not to be greatly influenced by the external environment such as temperature and humidity. In addition, in the formation of the membrane film, a dielectric film that can be coated using semiconductor equipment such as a silicon nitride film instead of spin coating is also possible.

After the membrane is formed as described above, a thick dielectric film is coated and patterned to form a flexible substrate 103 that can serve as a mechanical supporter or substrate thereon. (D) The flexible substrate 103 is formed using a high viscosity polymer, coated and patterned to form a thick, at which time the second coating is thick so that only a thin membrane formed primarily at the central pressure sensing site exists. Preferably, the polymer is removed through a photolithography process.

After forming the flexible substrate as described above, the second dummy substrate 200 on which the adhesive material 201 is formed is attached. 6E, the dummy substrate 200 has a function of supporting the entirety of the first substrate during the abrasion of the first substrate, and the adhesive material is adhesive, so that the first substrate does not fall well in the grinding operation. When the flexible substrate is separated from the second substrate after the abrasion process, a material that can be easily detached by hand without requiring any chemicals or processes is preferable.

Next, the lower portion of the first silicon substrate 50 on which the nanowires 100 are formed is ground to expose the polymer membrane 102 surrounding the nanowires. (FIG. 6F) When grinding the lower portion of the first silicon substrate 50 until the polymer membrane 102 of the central sensing region is exposed, the membrane may be damaged. It is also preferable to remove the silicon in the center portion using the dry etching process.

Thereafter, the silicon nanowire 100 is separated from the flexible substrate 103 on which the sensor is formed, from the second dummy substrate 200 (FIG. 6G), and vacuum or reference to the separated flexible substrate 103 is performed as described above. Attach cap structure 104 to form a cavity of pressure. As shown above, it is also possible to insert a gas or a liquid capable of maintaining the reference pressure in the cavity when attaching the cap for forming the cavity of the vacuum or reference pressure as described above. The thickness of the cap is preferably at least as thick as the deformation does not occur when an external pressure is applied, so that only the membrane 102 formed on the flexible substrate 103 can be deformed to sense the pressure.

 7A to 7B are plan views illustrating a flexible microphone array for manufacturing a 5.1-channel microphone by using a pressure sensor manufactured using the flexible substrate manufactured as described above according to an embodiment of the present invention.

The microphone array 300 fabricates a plurality of pressure sensors 400 on the flexible substrate 301 based on a manufacturing process of the pressure sensor B using the flexible substrate, and wires signal lines of the manufactured microphones. The process includes forming an interface unit 302 for connection with external circuits and devices. Each pressure sensor B is composed of a nanowire 304, an electrode layer 303 and a membrane film 305 as described above.

As shown in FIG. 7, a plurality of microphones (microphone arrays) constituting a 5.1-channel microphone are simultaneously manufactured on one flexible substrate, and signal lines of each microphone are wired in the form of a metal electrode on the substrate and on the flexible substrate. Because it is manufactured, there is an advantage that it can be bent freely. The wiring of the signal lines is performed through a metal deposition and patterning process after the membrane formation process in the pressure sensor manufacturing process, to form a flexible substrate through a process of coating and patterning a thick polymer after the signal line wiring process.

8A to 8E are assembly views illustrating a process of fabricating an ambisonic type 5.1 channel stereo sound device using the flexible microphone array according to an embodiment of the present invention.

Referring to Figures 8a to 8e, after the flexible microphone array made of a quadrangular pyramid-shaped structure is bonded to surround and finally cover the microphone is completed. First, referring to FIG. 8A, a small hole 500 is formed at the center of the surface of the quadrangular pyramid structure so that the cavity is formed when the flexible microphone is bonded to the surface. On the other hand, referring to Figure 8e, after the assembly is completed, since the signal lines of each microphone are all aligned and exposed to the interface portion of the flexible substrate is easily connected to other devices. In other words, it is necessary to add a lot of additional work in the assembly process, such as mounting 4 to 5 single-piece microphones on the machine structure and removing the signal lines separately from the existing products. In the method of manufacturing a 5.1-channel microphone according to the present invention, since signal lines are simultaneously formed on a flexible substrate, the assembling process is very simple since there is almost no additional work such as removing signal lines separately during the assembling process, thereby miniaturizing the product. Do.

Although the present invention has been described with reference to one embodiment shown in the accompanying drawings, this is merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. Could be. Accordingly, the true scope of protection of the present invention should be determined only by the appended claims.

1 is a cross-sectional view showing a pressure sensor by a conventional MEMS process.

2A to 2C are cross-sectional views showing a 5.1 channel microphone product according to the prior art.

3 is a graph showing the distribution of piezoresistive coefficients according to the size of silicon nanowires.

4 is a cross-sectional view illustrating a pressure sensor using a flexible substrate according to an embodiment of the present invention.

Figures 5a to 5f is a process chart showing step by step the silicon nanowire manufacturing process according to an embodiment of the present invention.

6a to 6h are step diagrams for a pressure sensor manufacturing process using silicon nanowires according to an embodiment of the present invention.

7A to 7B are perspective views illustrating a flexible microphone array for manufacturing a 5.1-channel microphone by using a pressure sensor manufactured by using the flexible substrate manufactured as described above according to an embodiment of the present invention.

8A to 8E are assembly views illustrating a process of fabricating an ambisonic type 5.1 channel stereo sound device using the flexible microphone array according to an embodiment of the present invention.

Claims (24)

A first substrate having a silicon nanowire, which is a sensing unit, formed in a central portion, and the silicon body being worn until the membrane film of the central sensing unit is exposed; An electrode layer formed on the first substrate bisected on the basis of the sensing unit; A membrane film formed on the first substrate and coated with a structure exposing the electrode layer; A flexible substrate formed on the membrane film and corresponding to the electrode layer and the sensing unit removed through an etching process; And Pressure sensor using a flexible substrate including a cap attached to the sensing unit to form a cavity for vacuum or reference pressure. The method according to claim 1, The sensor is a silicon nanowire is a bridge-type structure, the pressure sensor using a flexible substrate, characterized in that formed in the center of the first substrate. The method according to claim 1, The membrane film is a pressure sensor using a flexible substrate, characterized in that formed by coating with a polymer or silicon nitride film. The method of claim 3, The method of coating the membrane film is a pressure sensor using a flexible substrate, characterized in that using spin coating or spray coating method. The method according to claim 1, The material constituting the flexible substrate is a pressure sensor using a flexible substrate, characterized in that the high viscosity polymer. The method according to claim 1, A portion of the flexible substrate corresponding to the electrode layer and the sensing unit is removed by a photolithography process, characterized in that the pressure sensor using a flexible substrate. The method according to claim 1, The first substrate is worn so that the membrane film is not damaged so that a small thickness of silicon is left, and after removing the silicon formed in the nanowire lower portion of the sensing unit through a separate etching process, the cap is attached. Pressure sensor using substrate. The method according to claim 1, Pressure sensor using a flexible substrate, characterized in that the dielectric is buried between the sensing portion nanowire and the membrane film. The method of claim 1, wherein the sensing unit nanowires A first step of forming a first thermal oxide film on the silicon substrate; Forming a column structure on the silicon substrate; A third step of forming a support pillar structure and an inverted triangle silicon structure for forming nanowires on the silicon substrate having a column structure; A fourth step of removing the first thermal oxide film; A fifth step of forming a second thermal oxide film on the silicon substrate; And Pressure sensor using a flexible substrate, characterized in that the manufacturing step comprising the step of removing the second thermal oxide film. The method according to claim 9, The sixth step is a pressure sensor using a flexible substrate, characterized in that the wet etching by the BOE (buffered oxide etchant) or dry etching using HF vapor (vapor). The method according to claim 9, The cross-sectional size control of the nanowires is made by adjusting the thickness of the second thermal oxide film forming pressure sensor using a flexible substrate. The method according to claim 9, The support pillar structure is a pressure sensor using a flexible substrate, characterized in that both ends of the nanowire is connected structure. The method according to claim 12, The support pillar structure and the nanowire connection portion is a pressure sensor using a flexible substrate, characterized in that the stress is concentrated after removal of the second thermal oxide film. The method according to claim 9, The second step is a pressure sensor using a flexible substrate, characterized in that the dry etching. The method according to claim 9, The third step is a pressure sensor using a flexible substrate, characterized in that the wet etching using an anisotropic etching solution. The method according to claim 9, Cross section of the nanowire is a pressure sensor using a flexible substrate, characterized in that the reverse triangle structure. The method according to claim 9, The length of the nanowire is a pressure sensor using a flexible substrate, characterized in that formed in a few ㎛ to several hundred ㎛. Forming a nanowire structure as a sensing unit on a first substrate; A second step of forming an electrode layer on the first substrate bisected on the basis of the sensing unit; A third step of forming a membrane film with a structure exposing the electrode layer on the first substrate; Forming a flexible substrate on the membrane film and removing the flexible substrate in a portion corresponding to the electrode layer and the sensing unit through an etching process; A fifth step of forming a dummy substrate on the flexible substrate through an adhesive material; After forming the dummy substrate, a sixth step of exposing the membrane film surrounding the nanowires by abrading the lower portion of the first substrate; A seventh step of separating the dummy substrate; And And attaching a cap for forming a vacuum or reference pressure cavity under the central sensing unit of the first substrate. 19. The method of claim 18, The nanowire as the sensing unit of the first step is a pressure sensor manufacturing method using a flexible substrate, characterized in that to form a bridge-shaped structure. 19. The method of claim 18, The membrane film of the third step is a pressure sensor manufacturing method using a flexible substrate, characterized in that formed by coating with a polymer or silicon nitride film. 19. The method of claim 18, The membrane membrane of the third step is a pressure sensor manufacturing method using a flexible substrate, characterized in that formed by adjusting the thickness of the membrane in accordance with the operating pressure range. 19. The method of claim 18, The adhesive material of the fifth step is a method of manufacturing a pressure sensor using a flexible substrate, characterized in that the first substrate does not fall well during the abrasion operation, the material easily falls without a separate chemical or process after the abrasion process. A plurality of pressure sensors according to claim 1 formed on the flexible substrate; A flexible microphone array for manufacturing a 5.1-channel microphone including an interface unit for connecting an external circuit and a device through a wiring process of signal lines of the plurality of pressure sensors; And A 5.1 channel microphone attached to the microphone array, the microphone comprising a separate mechanically capped animal. The method according to claim 23, And a small hole is formed at the center of each side of the workpiece so that the cavity is formed in the sensing area when the flexible microphone is attached.

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