KR20110066801A - Light emitting device package - Google Patents

Abstract

PURPOSE: A light emitting device package is provided to improve thermal transfer between a first heat radiation plate and a second heat radiation plate by interposing a plating layer between the first and second heat radiation plates. CONSTITUTION: In a light emitting device package, The radiating unit(210) emits the heat from a light emitting diode chip(400). The radiating unit comprises a first heat plate(211) and a second heat plate(212). The first heat plate is arranged under the light emitting diode chip(400). . A first lead electrode(220) is electrically connected to the light emitting diode chip. A plating layer is interposed between the first heat radiation plate and the second heat radiation plate.

Description

Light emitting device package {LIGHT EMITTING DEVICE PACKAGE}

An embodiment relates to a light emitting device package.

Group III-V nitride semiconductors are spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their physical and chemical properties. Ⅲ-Ⅴ nitride semiconductor is made of a semiconductor material having a compositional formula of normal _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1).

A light emitting diode (LED) is a kind of semiconductor device that transmits and receives a signal by converting electricity into infrared light or light using characteristics of a compound semiconductor.

 LED or LD using such a nitride semiconductor material is widely used as a light emitting device for obtaining light, and is applied in the form of a package as a light source of various products such as a keypad light emitting part of a mobile phone, an electronic board, a lighting device, and the like.

Embodiments provide an LED package having improved heat dissipation performance and can be easily manufactured.

A light emitting device package according to an embodiment includes a light emitting device chip; A lead electrode electrically connected to the light emitting device chip; A first heat dissipation plate disposed under the light emitting device chip; And a second heat dissipation plate which is bent or curved from the first heat dissipation plate, and faces the first heat dissipation plate.

A light emitting device package according to an embodiment includes a light emitting device chip; A heat dissipation unit disposed under the light emitting device chip and dissipating heat generated from the light emitting device chip and having a hemming structure; And a lead electrode electrically connected to the light emitting device chip.

The light emitting device package according to the embodiment includes a first heat dissipation plate and a second heat dissipation plate that is bent or curved from the first heat dissipation plate and faces the first heat dissipation plate. That is, the heat radiating part of the light emitting device package according to the embodiment has a hemming structure.

Accordingly, the overall thickness of the heat dissipation unit is increased by hemming, and heat generated in the light emitting device chip can be efficiently released by the heat dissipation unit. In particular, the gap between the first heat dissipation plate and the second heat dissipation plate may be filled with a plating layer. The plating layer may improve heat transfer characteristics between the first heat dissipation plate and the second heat dissipation plate.

Therefore, the light emitting device package according to the embodiment has improved heat dissipation performance.

In addition, one metal plate may be cut and bent to form a lead electrode, a first heat dissipation plate, and a second heat dissipation plate. That is, the lead plate may be formed by cutting the copper plate and the like, and the cut copper plate may be bent or curved one or more times to form a heat radiating part of the hemming structure.

Therefore, the light emitting device package according to the embodiment can be easily manufactured.

In the description of the embodiment, each frame, layer, wire, part, chip, or electrode is formed on or under the "frame" of each frame, layer, wire, part, chip, or electrode, or the like. When described as being "in" and "under" includes both those that are formed "directly" or "indirectly" through other components. In addition, the upper or lower reference of each component is described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

1 is a perspective view illustrating a light emitting diode package according to an embodiment. 2 is a perspective view illustrating a lead frame and a light emitting diode chip. FIG. 3 is a cross-sectional view taken along the line A-A 'of FIG. 1. 4 is a cross-sectional view illustrating a cross section taken along line B-B 'of FIG. 2. 5 is a cross-sectional view illustrating a heat dissipation unit according to another embodiment.

1 to 4, a light emitting diode package according to an embodiment includes a molding part 100, a lead frame 200, a plating layer 300, and a light emitting diode chip 400.

The molding part 100 together with the lead frame 200 constitutes a body of the light emitting diode package. The molding part 100 surrounds the lead frame 200. The molding part 100 may be formed by injection molding integrally with the lead frame 200.

The molding part 100 has a high reflectance. Examples of the material used as the molding part 100 include a resin material such as polyphthalamide (PPA) and the like.

The molding part 100 includes a cavity 110 accommodating the light emitting diode chip 400. In the cavity 110, a phosphor layer for converting characteristics of light generated from the light emitting diode chip 400 may be disposed. In addition, a transparent resin layer may be disposed in the cavity 110 to protect the light emitting diode chip 400.

Although the surface shape of the cavity 110 is illustrated in a rectangular shape in the drawing, it is formed in various shapes such as a circular shape, a polygonal shape or an ellipse shape, and is formed to a predetermined depth. The circumferential surface of the cavity 110 may be perpendicular to the bottom surface of the cavity 110 or may be formed to be inclined at a predetermined angle to the outside (or the inside).

As shown in FIGS. 1 to 4, the lead frame 200 is disposed inside the molding part 100. The lead frame 200 is a conductor and has a high thermal conductivity. Examples of the material used for the lead frame 200 may include a metal such as copper. As described above, the lead frame 200 is integrally coupled with the molding part 100 to form a body of the light emitting diode package according to the embodiment.

In particular, as shown in FIG. 2, in which the molding part 100 is removed, the lead frame 200 includes a heat dissipation part 210, a first lead electrode 220, and a second lead electrode 230. ).

The heat dissipation unit 210 is disposed under the light emitting diode chip 400. The heat dissipation unit 210 may directly contact the light emitting diode chip 400. The heat dissipation unit 210 emits heat generated from the light emitting diode chip 400.

The heat dissipation unit 210 is formed in a hemming structure. That is, the heat dissipation unit 210 may have a structure in which one metal plate is folded one or more times. In this case, the heat dissipation unit 210 may have a structure in which one metal plate is bent or curved at 180 °.

The heat dissipation unit 210 includes a first heat dissipation plate 211 and a second heat dissipation plate 212.

The first heat dissipation plate 211 is disposed under the light emitting diode chip 400. In more detail, the light emitting diode chip 400 may be directly disposed on an upper surface of the first heat dissipation plate 211. The light emitting diode chip 400 may directly contact the first heat dissipation plate 211.

Alternatively, the light emitting diode chip 400 may be adhered to the first heat dissipation plate 211 by an adhesive.

The first heat dissipation plate 211 has a plate shape. The first heat dissipation plate 211 may have a rectangular plate shape.

As shown in FIG. 4, the second heat dissipation plate 212 is bent or curved from an end of the first heat dissipation plate 211 and extends below the first heat dissipation plate 211. At this time, the second heat dissipation plate 212 extends bent or curved 180 degrees from the first heat dissipation plate 211.

The second heat dissipation plate 212 faces the first heat dissipation plate 211. That is, the top surface of the second heat dissipation plate 212 is opposite to the bottom surface of the first heat dissipation plate 211. In this case, a slight gap may occur between the lower surface of the first heat dissipation plate 211 and the upper surface of the second heat dissipation plate 212.

Alternatively, the second heat dissipation plate 212 may be in direct contact with the first heat dissipation plate 211. In more detail, an upper surface of the second heat dissipation plate 212 may be in direct contact with a lower surface of the first heat dissipation plate 211.

In FIG. 4, the heat dissipation unit 210 is illustrated as a double heat dissipation plate structure, but is not limited thereto. As illustrated in FIG. 5, the heat dissipation unit 210a may have a triple heat dissipation plate structure. .

That is, the heat dissipation unit 210a may include a first heat dissipation plate 211, a second heat dissipation plate 212, and a third heat dissipation plate 213. The third heat dissipation plate 213 is bent or curved from the end of the second heat dissipation plate 212 and extends below the second heat dissipation plate 212. In this case, the third heat dissipation plate 213 extends bent or curved at 180 ° from the first heat dissipation plate 211.

Similarly, the third heat dissipation plate 213 faces the second heat dissipation plate 212. That is, the top surface of the third heat dissipation plate 213 is opposite to the bottom surface of the second heat dissipation plate 212. In this case, a slight gap may occur between the lower surface of the second heat dissipation plate 212 and the upper surface of the third heat dissipation plate 213. The gap may be filled with the plating layer 300.

Alternatively, the third heat dissipation plate 213 may be in direct contact with the second heat dissipation plate 212. In more detail, the top surface of the third heat dissipation plate 213 may be in direct contact with the bottom surface of the second heat dissipation plate 212.

The first lead electrode 220 is electrically connected to the light emitting diode chip 400. The first lead electrode 220 is disposed inside the molding part 100, and a part of the first lead electrode 220 is exposed to the outside of the molding part 100. In addition, a portion of the first lead electrode 220 is exposed inside the cavity 110.

The first lead electrode 220 is disposed next to the heat dissipation unit 210. The first lead electrode 220 may be spaced apart from the heat radiating part 210.

The second lead electrode 230 is electrically connected to the light emitting diode chip 400. The second lead electrode 230 is disposed inside the molding part 100, and a part of the second lead electrode 230 is exposed to the outside of the molding part 100. In addition, a portion of the second lead electrode 230 is exposed inside the cavity 110.

The second lead electrode 230 is disposed next to the heat dissipation unit 210. The second lead electrode 230 may be spaced apart from the heat radiating part 210. In addition, the heat dissipation unit 210 may be disposed between the first lead electrode 220 and the second lead electrode 230.

The heat dissipation unit 210, the first lead electrode 220, and the second lead electrode 230 may be formed using one metal plate. That is, one metal plate is cut, bent or curved to form the heat dissipation unit 210, the first lead electrode 220, and the second lead electrode 230.

Accordingly, the first heat dissipation plate 211, the second heat dissipation plate 212, the first lead electrode 220 and the second lead electrode 230 have a thickness corresponding to each other. That is, the thicknesses of the first heat dissipation plate 211, the second heat dissipation plate 212, the first lead electrode 220, and the second lead electrode 230 may be substantially the same.

The plating layer 300 is a metal layer plated on the surface of the lead frame 200. That is, the plating layer 300 is plated on the surfaces of the heat dissipation unit 210, the first lead electrode 220 and the second lead electrode 230.

In this case, the plating layer 300 may be interposed between the first heat dissipation plate 211 and the second heat dissipation plate 212. The plating layer 300 interposed between the first heat dissipation plate 211 and the second heat dissipation plate 212 is in direct contact with a lower surface of the first heat dissipation plate 211 and an upper surface of the second heat dissipation plate 212. do. That is, part of the plating layer 300 fills the gap between the first heat dissipation plate 211 and the second heat dissipation plate 212.

Alternatively, the first heat dissipation plate 211 and the second heat dissipation plate 212 may directly contact each other.

The plating layer 300 has high electrical conductivity and high corrosion resistance. In addition, the plating layer 300 may have a high thermal conductivity. Examples of the material used for the plating layer 300 include gold or silver.

The light emitting diode chip 400 is disposed on the heat dissipation unit 210. The light emitting diode chip 400 is disposed inside the cavity 110. The light emitting diode chip 400 may directly contact an upper surface of the heat dissipation unit 210.

The light emitting diode chip 400 generates light and exits upward. That is, the light emitting diode chip 400 is a light emitting device for generating light. The light emitting diode chip 400 has a chip shape. In other words, the LED chip 400 is a light emitting device chip for generating light.

The light emitting diode chip 400 is electrically connected to the first lead electrode 220 and the second lead electrode 230. In more detail, the LED chip 400 is connected to the first lead electrode 220 and the second lead electrode 230 through wires, respectively.

The light emitting diode chip 400 is a compound semiconductor such as GaAs-based, AlGaAs-based, GaN-based, InGaN-based, or InGaAlP-based, and may be mounted in a chip form.

The light emitting diode chip 400 may include a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer, a first electrode, and a second electrode.

The first conductivity type semiconductor layer may be an n-type semiconductor layer, and the first conductivity type semiconductor layer may be, for example, an n-type GaN layer.

The second conductive semiconductor layer may face the first conductive semiconductor layer and may be a p-type semiconductor layer. The second conductivity type semiconductor layer may be, for example, a p-type GaN layer.

The active layer is interposed between the first conductive semiconductor layer and the second conductive semiconductor layer. The active layer has a single quantum well structure or a multi quantum well structure. The active layer may be formed by a period of an InGaN well layer and an AlGaN barrier layer or a period of an InGaN well layer and a GaN barrier layer, and the light emitting material of the active layer may vary depending on an emission wavelength, for example, a blue wavelength, a red wavelength, a green wavelength, or the like. .

The first electrode is connected to the first conductive semiconductor layer, and the second electrode is connected to the second conductive semiconductor layer. The first electrode and the second electrode may be disposed at various positions.

In this case, the first lead electrode 220 may be connected to the first electrode, and the second lead electrode 230 may be connected to the second electrode.

Heat generated from the light emitting diode chip 400 is discharged to the outside through the heat dissipation unit 210. At this time, since the heat dissipation unit 210 has a hemming structure, it has a thick thickness.

Accordingly, the heat dissipation unit 210 may efficiently discharge heat generated from the light emitting diode chip 400. For example, the heat dissipation unit 210 has a high heat dissipation characteristic as compared to a heat dissipation structure formed of one plate.

In particular, the plating layer 300 may be filled in the gap between the first heat dissipation plate 211 and the second heat dissipation plate 212. The plating layer 300 may improve heat transfer characteristics between the first heat dissipation plate 211 and the second heat dissipation plate 212.

Therefore, the light emitting diode package according to the embodiment has improved heat dissipation performance.

6 and 7 are perspective views illustrating a process of forming the lead frame of the LED package according to the embodiment. In the description of the manufacturing method, reference is made to the description of the LED package described above.

Referring to FIG. 6, the copper plate is cut to form a first plate 201 for forming the first lead electrode 220, a second plate 202 for forming the second lead electrode 230, and a heat dissipation unit. A third plate 203 is provided for forming 210.

In this case, the first plate 201, the second plate 202, and the third plate 203 may be fixed by a tip connected to each other.

Referring to FIG. 7, the first plate 201 and the second plate 202 are bent or curved, respectively, to form the first lead electrode 220 and the second lead electrode 230.

In addition, the third plate 203 is bent or curved at least once by 180 ° to form the heat dissipation part 210.

6 and 7, the third plate 203 is illustrated as being bent or curved once, but is not limited thereto. The third plate 203 may be bent or curved at least two times.

The molding part 100 is wrapped in the lead frame 200 formed in this manner by a double injection method or the like.

Thereafter, the light emitting diode chip 400 is bonded to the inside of the cavity 110, and the light emitting diode chip 400 is connected to the first lead electrode 220 and the second lead electrode 230 by wire bonding. do.

Thereafter, the phosphor 110 and / or the transparent resin layer are filled in the cavity 110, and a light emitting diode package according to the embodiment is formed.

As such, one metal plate may be cut and bent to form the lead frame 200. That is, a copper plate or the like is cut, a plurality of plates are formed, and the lead electrodes are formed by bending or bending the plate, and the plate is bent or curved one or more times, so that the heat dissipation unit 210 of the hemming structure is formed. Can be formed.

Therefore, the light emitting diode package according to the embodiment can be easily manufactured.

8 is a cross-sectional view illustrating a cross section of a light emitting diode package according to another embodiment. In the present embodiment, with reference to the above-described embodiments, the LED chip and the lead frame will be further described. The description of the foregoing embodiments can be essentially combined with the description of this embodiment except for the changed part.

Referring to FIG. 8, the LED package according to the embodiment includes a lead frame 200 and two LED chips 410 and 420.

The lead frame 200 includes a first lead electrode 260, a first heat dissipation part 240, a second lead electrode 270, and a second heat dissipation part 250.

The first lead electrode 260 and the first heat dissipation part 240 are integrally formed. That is, the first lead electrode 260 extends from the first heat dissipation part 240.

The first heat dissipation part 240 has a hemming structure. In addition, the first heat dissipation part 240 has a multilayer structure. That is, the first heat dissipation part 240 and the first lead electrode 260 may be formed by bending or bending one metal plate.

In particular, the first heat dissipation part 240 has a structure in which a plurality of heat dissipation plates extending from bent or curved ends of each other are stacked on each other. In addition, the first lead electrode 260 extends from an end of the heat dissipation plate of the uppermost layer.

The second lead electrode 270 and the second heat dissipation part 250 also have the same structure as the first lead electrode 260 and the first heat dissipation part 240.

The light emitting diode chips 410 and 420 are disposed on the first heat dissipation part 240 and the second heat dissipation part 250, respectively. In addition, the LED chips 410 and 420 are connected to the first lead electrode 260 and the second lead electrode 270, respectively.

Although not clearly shown in this embodiment, it is obvious that the plating layer of the above-described embodiment can be applied to the lead frame, as described above.

The first lead electrode 260 is integrally formed with the first heat dissipation part 240, and the second lead electrode 270 is integrally formed with the second heat dissipation part 250.

Accordingly, the first heat dissipation part 240 and the second heat dissipation part 250 may perform the same functions as the first lead electrode 260 and the second lead electrode 270, respectively. In addition, the first lead electrode 260 and the second lead electrode 270 may perform the same functions as the first heat dissipation part 240 and the second heat dissipation part 250, respectively.

Therefore, the light emitting diode package according to the present embodiment has improved heat dissipation characteristics and at the same time has improved electrical characteristics.

In addition, the features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

Although the above description has been made based on the embodiments, these are merely examples and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains may not have been exemplified above without departing from the essential characteristics of the present embodiments. It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

1 is a perspective view illustrating a light emitting diode package according to an embodiment.

2 is a perspective view illustrating a lead frame and a light emitting diode chip.

FIG. 3 is a cross-sectional view taken along the line A-A 'of FIG. 1.

4 is a cross-sectional view illustrating a cross section taken along line B-B 'of FIG. 2.

5 is a cross-sectional view illustrating a heat dissipation unit according to another embodiment.

6 and 7 are perspective views illustrating a process of forming the lead frame of the LED package according to the embodiment.

8 is a cross-sectional view illustrating a cross section of a light emitting diode package according to another embodiment.

Claims (10)

Light emitting device chip; A lead electrode electrically connected to the light emitting device chip; A first heat dissipation plate disposed under the light emitting device chip; And The light emitting device package includes a second heat dissipation plate which is bent or curved from the first heat dissipation plate and faces the first heat dissipation plate. The light emitting device package of claim 1, further comprising a third heat dissipation plate that is bent or curved from the second heat dissipation plate and faces the second heat dissipation plate. The light emitting device package of claim 1, wherein a lower surface of the first heat dissipation plate and an upper surface of the second heat dissipation plate contact each other. The light emitting device package of claim 1, further comprising a plating layer interposed between the first heat dissipation plate and the second heat dissipation plate and in direct contact with the first heat dissipation plate and the second heat dissipation plate. The light emitting device package of claim 1, wherein the first heat dissipation plate and the second heat dissipation plate have a plate shape. The light emitting device package of claim 1, wherein a thickness of the lead electrode, a thickness of the first heat dissipation plate, and a thickness of the second heat dissipation plate correspond to each other. The light emitting device package of claim 1, wherein the lead electrode and the first heat dissipation plate are integrally formed. Light emitting device chip; A heat dissipation unit disposed under the light emitting device chip and dissipating heat generated from the light emitting device chip and having a hemming structure; And A light emitting device package comprising a lead electrode electrically connected to the light emitting device chip. The method of claim 8, wherein the heat dissipation unit A first heat dissipation plate disposed under the light emitting device chip; And And a second heat dissipation plate which is bent or curved from an end of the first heat dissipation plate, extends below the first heat dissipation plate, and faces the first heat dissipation plate. The method of claim 9, further comprising a metal layer plated on the surface of the heat dissipation unit and the lead electrode, A portion of the metal layer is interposed between the first heat dissipation plate and the second heat dissipation plate, the light emitting device package directly contacting the first heat dissipation plate and the second heat dissipation plate.

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