KR20110064620A - Organic electroluminescence device and method for fabricating of the same - Google Patents

Abstract

PURPOSE: An organic electroluminescence device and a manufacturing method thereof are provided to seal a sealing substrate by melting a glass frit, thereby reducing manufacturing costs and process time. CONSTITUTION: A sealing substrate(300) includes a sealing area and an electric field applying area. A first conductive layer(310a) is located on the sealing area. The first conductive layer includes a fourth conductive layer and a fifth conductive layer. A second conductive layer is expanded in one direction of the first conductive layer. A third conductive layer is expanded in the other direction of the first conductive layer.

Description

Organic electroluminescent display device and method for manufacturing same {Organic Electroluminescence Device And Method For Fabricating Of The Same}

The present invention relates to an organic light emitting display device and a manufacturing method thereof, and more particularly, to an organic light emitting display device and a method for manufacturing the organic light emitting display for sealing the substrate and the sealing substrate with a glass frit.

Recently, a flat panel type such as a liquid crystal display device, an organic electroluminescence device, or a plasma display panel that solves the shortcomings of conventional display devices such as cathode ray tubes. Flat panel display devices are attracting attention.

Since the liquid crystal display is not a light emitting device but a light receiving device, there is a limit in brightness, contrast, viewing angle, and large area, and although the PDP is a light emitting device, it is heavier in weight and consumes more power than other flat panel displays. In addition, there is a problem that the manufacturing method is complicated.

On the other hand, since the organic light emitting display device is a self-luminous element, it is excellent in viewing angle, contrast, etc., and because it does not need a backlight, it is possible to be lightweight and thin, and is advantageous in terms of power consumption. In addition, since it is possible to drive a DC low voltage, fast response speed, and all solid, it is resistant to external shock, wide use temperature range, and has a simple and inexpensive manufacturing method.

1 is a cross-sectional view of an organic light emitting display device according to the prior art.

Referring to FIG. 1, a substrate 100 is provided, and an organic light emitting diode 110 is formed on the substrate 100. The organic light emitting diode 110 includes a first electrode, an organic layer including at least a light emitting layer, and a second electrode.

The semiconductor device may further include a thin film transistor including a semiconductor layer, a gate electrode, and a source / drain electrode.

Subsequently, the encapsulation substrate 120 is provided, a glass frit 130 is formed on one surface of the substrate 100 or the encapsulation substrate 120, and the substrate 100 and the encapsulation substrate 120 are bonded to each other.

Thereafter, the glass frit 130 is irradiated with a laser to melt and solidify the glass frit 130 to manufacture an organic light emitting display device according to the related art.

However, the melting of the glass frit by the laser irradiation causes the manufacturing cost to increase because the laser irradiation equipment is expensive.

In addition, when irradiating a laser in order to melt the glass frit, the laser is irradiated corresponding to the area where the glass frit is located, so a precise alignment is required, and the process time is long because the laser is irradiated to each area. There is a problem.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the prior art, and an object of the present invention is to provide a new method for melting the glass frit in encapsulating the substrate and the sealing substrate with the glass frit.

The present invention provides an encapsulation substrate comprising an encapsulation region and an electric field application region; A first conductive layer positioned in the encapsulation region and continuously connected to each other; A second conductive layer positioned in the field applying region and extending in one direction of the first conductive layer; And a third conductive layer positioned in the electric field application region and extending in the other direction of the first conductive layer.

In addition, the present invention includes a substrate including a pixel region and an encapsulation region; An organic light emitting display device disposed on the pixel area of the substrate; An encapsulation substrate including an encapsulation region and an electric field application region; A first conductive layer positioned in an encapsulation area of the encapsulation substrate and continuously connected to each other; A second conductive layer positioned in the electric field application region of the encapsulation substrate and extending in one direction of the first conductive layer; And a third conductive layer positioned in an electric field applying region of the encapsulation substrate and extending in the other direction of the first conductive layer.

The present invention is also characterized in that the length of the first conductive layer in the clockwise direction and the length of the first conductive layer in the counterclockwise direction are the same based on the second conductive layer and the third conductive layer. Provided are a substrate and an organic light emitting display device.

The present invention also provides an encapsulation substrate and an organic light emitting display device, wherein the first conductive layer includes a fourth conductive layer formed in a horizontal direction and a fifth conductive layer formed in a vertical direction.

The present invention also provides an encapsulation substrate and an organic light emitting display device, wherein the fourth conductive layer comprises an upper fourth conductive layer and a lower fourth conductive layer.

In addition, the present invention is characterized in that the second conductive layer is formed to extend in one direction of the upper fourth conductive layer, the third conductive layer is formed to extend in the other direction of the lower fourth conductive layer An encapsulation substrate and an organic light emitting display device are provided.

The present invention also provides an encapsulation substrate and an organic light emitting display device, wherein the fifth conductive layer comprises a right fifth conductive layer and a left fifth conductive layer.

In addition, the present invention is characterized in that the second conductive layer is formed to extend in one direction of the right fifth conductive layer, the third conductive layer is formed to extend in the other direction of the left fifth conductive layer An encapsulation substrate and an organic light emitting display device are provided.

The present invention also provides an encapsulation substrate including an encapsulation region and an electric field application region; A first conductive layer positioned in the encapsulation area and formed in a first direction; A second conductive layer positioned in the encapsulation area and formed in a second direction; A third conductive layer formed in the electric field application region and extending from the first conductive layer; And a fourth conductive layer formed in the electric field applying region and extending from the second conductive layer.

In addition, the present invention includes a substrate including a pixel region and an encapsulation region; An organic light emitting display device disposed on the pixel area of the substrate; An encapsulation substrate including an encapsulation region and an electric field application region; A first conductive layer positioned in an encapsulation area of the encapsulation substrate and formed in a first direction; A second conductive layer positioned in an encapsulation area of the encapsulation substrate and formed in a second direction; A third conductive layer formed in the electric field application region of the encapsulation substrate and extending from the first conductive layer; And a fourth conductive layer formed in the electric field application region of the encapsulation substrate and extending from the second conductive layer.

In addition, the present invention comprises the steps of providing a substrate including a pixel region and an encapsulation region; Forming an organic light emitting display device on the pixel area of the substrate; Providing an encapsulation substrate having an encapsulation area and an electric field application area; And bonding the encapsulation substrate and the substrate so that the encapsulation region of the encapsulation substrate and the encapsulation region of the substrate correspond to each other, wherein the encapsulation substrate is positioned in the encapsulation region of the encapsulation substrate and connected to each other continuously. 1 conductive layer; A second conductive layer positioned in the electric field application region of the encapsulation substrate and extending in one direction of the first conductive layer; And a third conductive layer positioned in the electric field application region of the encapsulation substrate and extending in the other direction of the first conductive layer.

The present invention may further include a step of bonding and encapsulating the encapsulating substrate and the substrate after the step of bonding the encapsulating substrate and the substrate to each other. The present invention provides a method of manufacturing an organic light emitting display device, the method including melting the glass frit by applying an electric field to a conductive layer.

In addition, the present invention comprises the steps of providing a substrate including a pixel region and an encapsulation region; Forming an organic light emitting display device on the pixel area of the substrate; Providing an encapsulation substrate having an encapsulation area and an electric field application area; And bonding the encapsulation substrate and the substrate so that the encapsulation region of the encapsulation substrate and the encapsulation region of the substrate correspond to each other, wherein the encapsulation substrate is positioned in the encapsulation region of the encapsulation substrate and is formed in a first direction. 1 conductive layer; A second conductive layer positioned in an encapsulation area of the encapsulation substrate and formed in a second direction; A third conductive layer formed in the electric field application region of the encapsulation substrate and extending from the first conductive layer; And a fourth conductive layer formed in the electric field application region of the encapsulation substrate and extending from the second conductive layer.

The present invention may further include a step of adhering and encapsulating the encapsulating substrate and the substrate after the step of adhering the encapsulating substrate and the substrate to each other. The present invention provides a method of manufacturing an organic light emitting display device, the method including melting the glass frit by applying an electric field to a conductive layer or a fourth conductive layer.

In the organic light emitting display device according to the present invention, by applying an electric field to the conductive layer, applying Joule heat to the glass frit formed on the upper or lower portion of the conductive layer to seal the sealing substrate, the manufacturing cost is reduced, and the processing time is reduced. There is an effect that can be significantly reduced.

Embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosure may be made thorough and complete, and to fully convey the spirit of the present invention to those skilled in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. In addition, where a layer is said to be "on" another layer or substrate, it may be formed directly on the other layer or substrate, or a third layer may be interposed therebetween. Portions denoted by like reference numerals denote like elements throughout the specification.

FIG. 2A is a plan view showing a sealing substrate according to a first embodiment of the present invention, FIG. 2B is a sectional view taken along the line AA of FIG. 2A, FIG. 2C is a sectional view taken along the line BB of FIG. 2A, and FIG. 2D is a CC of FIG. 2A. Sectional view along the line.

2A to 2D, the encapsulation substrate 300 according to the first embodiment of the present invention includes a pixel region I, an encapsulation region II, and an electric field applying region III. In this case, the pixel region I corresponds to the region corresponding to the pixel region I of the device substrate, which will be described later, and the encapsulation region II, to the encapsulation region II of the device substrate, described later. It corresponds to the corresponding area. The electric field applying region III is a region in which a third conductive layer for applying an electric field to a conductive layer, which will be described later, is formed.

2A to 2D, the encapsulation substrate 300 according to the first embodiment of the present invention includes a first conductive layer 310a and a second conductive layer 320 in the encapsulation region II. The electric field applying region III includes a third conductive layer 310b extending from the first conductive layer 310a. In this case, the first conductive layer 310a may be formed in a first direction, for example, in a horizontal direction, and the second conductive layer 320 may be formed in a second direction, for example, in a vertical direction.

That is, as shown in FIG. 2A, the first conductive layer 310a and the second conductive layer 320 are continuously connected to each other to define an encapsulation region II, and the third conductive layer 310b. ) Extends in a straight line form from the first conductive layer 310a and is formed in the electric field applying region III that is outside the encapsulation region II.

In this case, the third conductive layer 310b extends in the right direction from the upper first conductive layer 310a and extends in the left direction from the lower first conductive layer 310a based on the drawing.

On the other hand, although not shown in the drawing, in contrast to FIG. 2B, the third conductive layer 310b may extend from the upper first conductive layer 310a to the left side based on the drawing, and the lower first conductive layer ( 310a) may extend in the right direction.

That is, in the first embodiment of the present invention, the third conductive layer 310b extends in a straight line in a left or right direction from the upper first conductive layer 310a and the lower first conductive layer 310b. And a lower third conductive layer 310b extending in a straight line from the conductive layer 310a in a left or right direction, wherein the upper third conductive layer and the lower third conductive layer extend in opposite directions.

Thus, the length of the first conductive layer and the second conductive layer in the clockwise direction (hereinafter referred to as “first path”) and the first conductive layer and the first conductive layer based on the upper third conductive layer and the lower third conductive layer. The length of the two conductive layers in the counterclockwise direction (hereinafter referred to as "second path") is the same.

In addition, although not shown in the drawing, in the present invention, the third conductive layer formed in the field applying region III may extend from the second conductive layer 320.

At this time, when the third conductive layer extends from the second conductive layer, the upper or lower right third conductive layer and the left second conductive layer extending in a straight line upward or downward direction from the right second conductive layer with reference to the drawings. The left third conductive layer may extend in a straight line in a downward direction, and the right third conductive layer and the left third conductive layer may extend in opposite directions.

Thus, the length of the first conductive layer and the second conductive layer in the clockwise direction (hereinafter referred to as “first path”), the first conductive layer, and the first conductive layer based on the right third conductive layer and the left third conductive layer The length of the two conductive layers in the counterclockwise direction (hereinafter referred to as "second path") is the same.

As a result, in the first embodiment of the present invention, the third conductive layer has two numbers extending from the first conductive layer or the second conductive layer, and the first conductive layer is based on the two third conductive layers. The two third conductive layers are formed in a diagonal direction so that the first path and the second path from the second conductive layer to the second conductive layer are the same.

The first conductive layer to the third conductive layer may be formed of a transparent conductive thin film or a metal thin film, and specifically, the transparent conductive thin film may use indium tin oxide (ITO) or indium zinc oxide (IZO). The metal thin film may use Mo, Ti, Cr, Al, Cu, Au, Ag, Pd or MoW, but the material of the conductive layer is not limited in the present invention.

On the other hand, the first conductive layer to the third conductive layer may be formed by a method such as sputtering or vapor deposition (Evaporation), and may be formed of 500 kPa to 3000 kPa, in the present invention, It does not limit the formation method and thickness.

In this case, the first conductive layer to the third conductive layer are classified as separate components for convenience of description, but these layers are preferably formed of the same material at the same time in terms of manufacturing process.

3 is a cross-sectional view showing an example of a substrate including an organic light emitting display device according to the present invention.

Referring to FIG. 3, a substrate including an organic light emitting display device according to the present invention includes a pixel region I and an encapsulation region II. The substrate 200 may use an insulating glass, a plastic, or a conductive substrate.

Subsequently, an organic light emitting diode 210 is formed on the pixel region I of the substrate 200. The organic light emitting diode 210 may include a first electrode 220, at least an organic layer 230 including a light emitting layer, and a second electrode 240.

In the organic light emitting diode 210, the first electrode 220 may use indium tin oxide (ITO) or indium zinc oxide (IZO). In addition, in the case of a top emission structure, it may further include a reflective film.

The organic layer 230 may include at least a light emitting layer, and may further include any one or more layers of a hole injection layer, a hole transport layer, an electron transport layer, or an electron injection layer.

The second electrode 240 may be used as any one or more of Mg, Ag, Al, Ca, and alloys thereof having a low work function.

In addition, although not shown in the drawing, the organic light emitting diode 210 may further include a thin film transistor including a semiconductor layer, a gate electrode, and a source / drain electrode.

The thin film transistor may form a thin film transistor having a top gate structure in which a gate electrode is formed on the semiconductor layer. Alternatively, the thin film transistor having a bottom gate structure in which the gate electrode is positioned below the semiconductor layer may be formed. It may be formed.

However, the form of the organic light emitting device is not limited in the present invention.

Subsequently, the passivation layer 250 may be formed to cover the organic light emitting diode 210. The passivation layer 250 may be formed of an organic layer, an inorganic layer, or a composite layer thereof to protect the organic light emitting diode 210 from external physical and chemical stimuli.

4 is a cross-sectional view for explaining before bonding the sealing substrate and the substrate including the organic light emitting display device of the present invention.

Referring to FIG. 4, the encapsulation substrate 300 and the substrate 200 including the organic light emitting diode are disposed to face each other. That is, the pixel region I and the encapsulation region II of the substrate 200 are disposed to face the pixel region I and the encapsulation region II of the encapsulation substrate, respectively.

In this case, as described above, the encapsulation substrate 300 includes the first conductive layer 310a and the second conductive layer 320 in the encapsulation region II, that is, the first conductive layer 310a. And the second conductive layer 320 may be continuously connected to each other to define an encapsulation region II.

Meanwhile, the glass frit 330 for encapsulation is formed in the first conductive layer 310a and the second conductive layer 320.

The glass frit 280 may be formed of one selected from the group consisting of lead oxide (PbO), diboron trioxide (B ₂ O ₈ ), and silicon dioxide (SiO ₂ ), and the glass frit 280 may be screen printed. Alternatively, the glass frit may be formed by a dispensing method, but the glass frit does not limit the material and the forming method.

In this case, although the glass frit is shown on the first conductive layer 310a and the second conductive layer 320, the first conductive layer 310a and the second conductive layer 320 are different from each other. The glass frit may be formed in an area on the substrate 200 side corresponding to the?

That is, when the glass frit is formed on the encapsulation substrate 300 side, the glass frit is formed on the first conductive layer 310a and the second conductive layer 320, and the glass frit is formed on the substrate 200 side. Is formed in a region corresponding to the first conductive layer 310a and the second conductive layer 320.

FIG. 5A is a plan view for explaining after bonding the sealing substrate and the substrate including the organic light emitting display device of the present invention, and FIG. 5B is a cross-sectional view taken along the line D-D of FIG. 5A.

Referring to FIGS. 5A and 5B, pressure is applied to the sealing substrate and the substrate disposed to face each other to bond the sealing substrate and the substrate.

In this case, referring to FIG. 5A, the third conductive layer 310b formed in the field applying region III of the encapsulation substrate 300 is exposed to the outside.

That is, since the third conductive layer 310b extends in a straight line form from the first conductive layer 310a and is formed in the field applying region III outside the encapsulation region II, the third conductive layer 310b is bonded to the substrate. The third conductive layer 310b may be exposed to the outside.

Since the specific form of the third conductive layer is as described above, it will be omitted below.

Subsequently, an electric field is applied to the third conductive layer 310b to generate Joule heat, the glass frit 330 is melted and solidified, and the substrate 200 is bonded to the encapsulation substrate 300 to complete the encapsulation process. do.

Thus, the organic light emitting display device according to the present invention can be formed.

Hereinafter, a process of melting the glass frit by applying an electric field to the conductive layer as described above will be described in detail.

Application of the electric field to the conductive layer is performed by applying energy of a power density that can generate high heat above the temperature at which the glass frit can be melted by Joule heating.

In the present invention, as described above, Joule heating is generated by applying an electric field to the conductive layer. Joule heating means heating by using heat generated by resistance when current flows through a conductor. .

That is, the amount of energy per unit time applied to the conductive layer by Joule heating due to the application of the electric field may be represented by the following equation.

W = V × I

In the above formula, W is the amount of energy per unit time of Joule heating, V is the voltage across the conductive layer, and I is the current, respectively.

From the above equation, it can be seen that as the voltage V increases and / or the current I increases, the amount of energy per unit time applied to the conductive layer by Joule heating increases. When the temperature of the conductive layer rises by Joule heating, the glass frit located above or below the conductive layer is melted.

In this case, since the application of the electric field is determined by various factors such as resistance, length and thickness of the conductive layer, it is difficult to be specified, but may be about 100 W / cm ² to 1,000,000 W / cm ² . In addition, the applied current may be direct current or alternating current, and the application time of the electric field may be 1 / 10,000,000 to 10 seconds continuously applied. The application of this electric field can be repeated several times in regular or irregular units.

6 is a schematic diagram for explaining the application of an electric field to the conductive layer according to the first embodiment of the present invention.

As described above, the encapsulation substrate according to the present invention includes a first conductive layer to a third conductive layer, and the first conductive layer 310a and the second conductive layer 320 are continuously connected to each other to encapsulate the region. The third conductive layer 310b is formed in the electric field applying region III, which is outside the encapsulation region II, so that the third conductive layer is exposed to the outside even when the substrate and the encapsulation substrate are bonded together. Will be.

As a result, since the process of applying the electric field to melt the glass frit is a process after bonding the substrate and the sealing substrate, the electric field is applied through the third conductive layer 310b. That is, the third conductive layer 310b is formed in the field applying region III outside the encapsulation region II in order to melt the glass frit by applying an electric field.

Referring to FIG. 6, an electric field is applied to the upper third conductive layer 310b and the lower third conductive layer 310b based on the drawing.

At this time, the first conductive layer and the second conductive layer are in a parallel relationship with the third conductive layer.

That is, the first conductive layer 310a and the second conductive layer 320 are continuously connected to each other, and as shown in the drawing, the third conductive layer is the upper first conductive layer 310a. From the upper third conductive layer extending in the right direction and the lower third conductive layer extending in the left direction from the lower first conductive layer 310a. In this case, when an electric field is applied to the upper third conductive layer 310b and the lower third conductive layer 310b, the electric field is applied to the first conductive layer and the second conductive layer in parallel.

Accordingly, in the first embodiment of the present invention, the glass frit may be melted by generating Joule heat in the entire areas of the first conductive layer and the second conductive layer by applying only one electric field.

At this time, in the present invention, the length of the first conductive layer and the second conductive layer in the clockwise direction and the counterclockwise direction of the first conductive layer and the second conductive layer are based on the upper third conductive layer and the lower third conductive layer. By making the same, the quality of the encapsulation can be improved by adjusting the Joule heat generated in the first conductive layer and the second conductive layer to be uniform.

As described above, in the present invention, the sealing substrate is sealed by applying an electric field to the conductive layer and applying Joule's heat to the glass frit formed on the upper or lower portion of the conductive layer.

That is, the melting of the glass frit by the conventional laser irradiation increases the manufacturing cost in that the laser irradiation equipment is expensive, but the manufacturing cost can be reduced by adopting a method of applying an electric field to the conductive layer.

In addition, the melting of the glass frit by conventional laser irradiation requires precise alignment in order to irradiate the laser, but the method of applying an electric field to the conductive layer may be performed by forming a glass frit on the upper or lower portion of the conductive layer. Therefore, precise alignment for melting the glass frit is not important, and the time for applying the electric field to the conductive layer corresponds to several seconds, thereby significantly reducing the processing time.

FIG. 7A is a plan view illustrating a sealing substrate according to a second embodiment of the present invention, FIG. 7B is a sectional view taken along the line AA of FIG. 7A, FIG. 7C is a sectional view taken along the line BB of FIG. 7A, and FIG. 7D is a CC of FIG. 7A. 7E is a cross-sectional view taken along the line DD of FIG. 7A.

The encapsulation substrate according to the second embodiment of the present invention may be the same as the first embodiment except for the following.

7A to 7E, the encapsulation substrate 400 according to the present invention includes a pixel region I, an encapsulation region II, and an electric field applying region III. In this case, the pixel region I corresponds to the region corresponding to the pixel region I of the device substrate, which will be described later, and the encapsulation region II corresponds to the encapsulation region II of the device substrate, which will be described later. It corresponds to the area to be. The electric field applying region III is a region in which a third conductive layer for applying an electric field to a conductive layer, which will be described later, is formed.

7A to 7E, the encapsulation substrate 400 according to the present invention includes a first conductive layer 410a and a second conductive layer 420a in the encapsulation region II. And a third conductive layer 410b extending from the first conductive layer 410a in the application region III, and extending from the second conductive layer 420a in the field application region III. And a fourth conductive layer 420b. In this case, the first conductive layer 410a may be formed in a first direction, for example, in a horizontal direction, and the second conductive layer 420a may be formed in a second direction, for example, in a vertical direction.

That is, as shown in FIG. 7A, the first conductive layer 410a and the second conductive layer 420a are continuously connected to each other to define an encapsulation region II, and the third conductive layer 410b. ) Extends in a straight line form from the first conductive layer 410a and is formed in the field applying region III, which is outside the encapsulation region II, and the fourth conductive layer 420b is formed from the second conductive layer 420a. It extends in a straight line form and is formed in the electric field application area | region III which is outside the sealing area | region II.

The first to fourth conductive layers may be formed of a transparent conductive thin film or a metal thin film, and specifically, the transparent conductive thin film may use indium tin oxide (ITO) or indium zinc oxide (IZO). The metal thin film may use Mo, Ti, Cr, Al, Cu, Au, Ag, Pd or MoW, but the material of the conductive layer is not limited in the present invention.

8A and 8B are schematic diagrams for explaining the application of an electric field to the conductive layer according to the second embodiment of the present invention.

As described above, the encapsulation substrate according to the second embodiment of the present invention includes a first conductive layer to a fourth conductive layer, and the first conductive layer 410a and the second conductive layer 420a are continuous with each other. The third conductive layer 410b and the fourth conductive layer 420b are formed in the electric field applying region III outside the encapsulation region II, so that the encapsulation region can be defined. Even when the substrate is bonded, the third conductive layer and the fourth conductive layer are exposed to the outside.

As a result, since the process of applying the electric field to melt the glass frit is a process after bonding the substrate and the sealing substrate, the electric field is applied through the third conductive layer 410b and the fourth conductive layer 420b. That is, the third conductive layer 410b and the fourth conductive layer 420b are formed in the field applying region III outside the encapsulation region II in order to melt the glass frit by applying an electric field.

In the second embodiment of the present invention, the glass frit is melted by applying an electric field twice. FIG. 8A is a schematic diagram showing whether the first electric field is applied, and FIG. 8B is a schematic diagram showing whether the second electric field is applied. Is not limited to the order of applying the electric field twice.

First, referring to FIG. 8A, an electric field is applied to the upper third conductive layer 410b and the lower third conductive layer 410b based on the drawing.

In this case, since the third conductive layer 410b extends in a straight line form from the first conductive layer 410a, the upper first conductive layer 410a extends in a straight line form with the upper third conductive layer 410b. An equipotential is formed, and the lower first conductive layer 410a extending in a straight line with the lower third conductive layer 410b forms an equipotential.

However, even if the upper third conductive layer 410b and the lower third conductive layer 410b each form an equipotential, the voltages of the upper conductive layer 410b and the lower conductive layer 420a are different from each other, so that the voltages applied to both ends of the second conductive layer 420a As a result, since a current flows in the second conductive layer, Joule heat is generated.

Therefore, by applying an electric field to the upper third conductive layer 410b and the lower third conductive layer 410b, Joule heat is generated in the second conductive layer 420a, so that the upper or lower portion of the second conductive layer 420a is The formed glass frit is melted.

Next, referring to FIG. 8B, an electric field is applied to the right fourth conductive layer 420b and the left fourth conductive layer 420b based on the drawing.

In this case, since the fourth conductive layer 420b extends in a straight line form from the second conductive layer 420a, the right second conductive layer 420a extends in a straight line form with the right fourth conductive layer 420b. An equipotential is formed, and the left second conductive layer 420a extending in a straight line with the left fourth conductive layer 420b forms an equipotential.

However, even if the right fourth conductive layer 420b and the left fourth conductive layer 420b each form an equipotential, the voltages of the four conductive layers 420b are different from each other, so that the voltages applied to both ends of the first conductive layer 410a As a result, since a current flows in the first conductive layer, Joule heat is generated.

Accordingly, by applying an electric field to the right fourth conductive layer 420b and the left fourth conductive layer 420b, Joule heat is generated in the first conductive layer 410a, so that the upper or lower portion of the second conductive layer 410a is formed. The formed glass frit is melted.

The present invention has been shown and described with reference to the preferred embodiments as described above, but is not limited to the above embodiments and those skilled in the art without departing from the spirit of the present invention. Various changes and modifications will be possible.

1 is a cross-sectional view of an organic light emitting display device according to the prior art;

2A is a plan view showing a sealing substrate according to a first embodiment of the present invention;

2B is a cross-sectional view taken along the line A-A of FIG. 2A;

2C is a cross-sectional view taken along the line B-B in FIG. 2A;

FIG. 2D is a cross-sectional view taken along the line C-C of FIG. 2A;

3 is a cross-sectional view showing an example of a substrate including an organic light emitting display device according to the present invention;

4 is a cross-sectional view for explaining before bonding the substrate including the sealing substrate and the organic light emitting device of the present invention;

5A is a plan view for explaining the bonding of the sealing substrate and the substrate including the organic light emitting display device according to the present invention;

5B is a cross-sectional view taken along the line D-D of FIG. 5A;

6 is a schematic diagram for explaining the application of an electric field to the conductive layer according to the first embodiment of the present invention;

7A is a plan view showing a sealing substrate according to a second embodiment of the present invention;

7B is a cross-sectional view taken along the line A-A of FIG. 7A;

7C is a cross-sectional view taken along the line B-B in FIG. 7A;

7D is a cross-sectional view taken along the line C-C of FIG. 7A;

7E is a cross-sectional view taken along the line D-D of FIG. 7A;

8A and 8B are schematic diagrams for explaining the application of an electric field to the conductive layer according to the second embodiment of the present invention.

Claims (37)

An encapsulation substrate including an encapsulation region and an electric field application region; A first conductive layer positioned in the encapsulation region and continuously connected to each other; A second conductive layer positioned in the field applying region and extending in one direction of the first conductive layer; And And a third conductive layer positioned in the electric field application region and extending in the other direction of the first conductive layer. The method of claim 1, And the first conductive layer includes a fourth conductive layer formed in a horizontal direction and a fifth conductive layer formed in a longitudinal direction. The method of claim 2, And the fourth conductive layer comprises an upper fourth conductive layer and a lower fourth conductive layer. The method of claim 3, wherein And the second conductive layer extends in one direction of the upper fourth conductive layer, and the third conductive layer extends in the other direction of the lower fourth conductive layer. The method of claim 2, And the fifth conductive layer comprises a right fifth conductive layer and a left fifth conductive layer. The method of claim 5, And the second conductive layer extends in one direction of the right fifth conductive layer, and the third conductive layer extends in the other direction of the left fifth conductive layer. The method of claim 1, And a glass frit formed on the first conductive layer. The method of claim 1, The length of the first conductive layer in the clockwise direction and the length of the first conductive layer in the counterclockwise direction are the same with respect to the second conductive layer and the third conductive layer. The method of claim 1, And the conductive layer is a transparent conductive thin film or a metal thin film. An encapsulation substrate including an encapsulation region and an electric field application region; A first conductive layer positioned in the encapsulation area and formed in a first direction; A second conductive layer positioned in the encapsulation area and formed in a second direction; A third conductive layer formed in the electric field application region and extending from the first conductive layer; And And a fourth conductive layer formed in the electric field application region and extending from the second conductive layer. 11. The method of claim 10, And the first conductive layer and the second conductive layer are continuously connected. 11. The method of claim 10, And a glass frit formed on the first conductive layer and the second conductive layer. A substrate including a pixel region and an encapsulation region; An organic light emitting display device disposed on the pixel area of the substrate; An encapsulation substrate including an encapsulation region and an electric field application region; A first conductive layer positioned in an encapsulation area of the encapsulation substrate and continuously connected to each other; A second conductive layer positioned in the electric field application region of the encapsulation substrate and extending in one direction of the first conductive layer; And a third conductive layer positioned in the electric field applying region of the encapsulation substrate, and extending in the other direction of the first conductive layer. The method of claim 13, And the first conductive layer includes a fourth conductive layer formed in a horizontal direction and a fifth conductive layer formed in a vertical direction. The method of claim 14, And the fourth conductive layer includes an upper fourth conductive layer and a lower fourth conductive layer. The method of claim 15, The second conductive layer extends in one direction of the upper fourth conductive layer, and the third conductive layer extends in the other direction of the lower fourth conductive layer. . The method of claim 14, And the fifth conductive layer includes a right fifth conductive layer and a left fifth conductive layer. The method of claim 17, The second conductive layer extends in one direction of the right fifth conductive layer, and the third conductive layer extends in the other direction of the left fifth conductive layer. . The method of claim 13, The organic light emitting display device of claim 1, further comprising a glass frit formed on the first conductive layer. The method of claim 13, The length of the first conductive layer in the clockwise direction and the length of the first conductive layer in the counterclockwise direction are the same with respect to the second conductive layer and the third conductive layer, the organic light emitting display device. A substrate including a pixel region and an encapsulation region; An organic light emitting display device disposed on the pixel area of the substrate; An encapsulation substrate including an encapsulation region and an electric field application region; A first conductive layer positioned in an encapsulation area of the encapsulation substrate and formed in a first direction; A second conductive layer positioned in an encapsulation area of the encapsulation substrate and formed in a second direction; A third conductive layer formed in the electric field application region of the encapsulation substrate and extending from the first conductive layer; And And a fourth conductive layer formed in the field applying region of the encapsulation substrate and extending from the second conductive layer. The method of claim 21, And the first conductive layer and the second conductive layer are connected in series. The method of claim 21, The organic light emitting display device of claim 1, further comprising a glass frit formed on the first conductive layer and the second conductive layer. Providing a substrate including a pixel region and an encapsulation region; Forming an organic light emitting display device on the pixel area of the substrate; Providing an encapsulation substrate having an encapsulation area and an electric field application area; And Bonding the encapsulation substrate and the substrate so that the encapsulation region of the encapsulation substrate and the encapsulation region of the substrate correspond to each other; The encapsulation substrate may include a first conductive layer positioned in an encapsulation region of the encapsulation substrate and continuously connected to each other; A second conductive layer positioned in the electric field application region of the encapsulation substrate and extending in one direction of the first conductive layer; And a third conductive layer positioned in the electric field application region of the encapsulation substrate and extending in the other direction of the first conductive layer. The method of claim 24, And a glass frit formed on the first conductive layer. The method of claim 25, After the bonding of the encapsulation substrate and the substrate, further comprising adhering and encapsulating the encapsulation substrate and the substrate, The step of bonding and encapsulating the encapsulation substrate and the substrate comprises melting the glass frit by applying an electric field to the third conductive layer. The method of claim 26, The applying of the electric field is a method of manufacturing an organic light emitting display device, characterized in that for applying a power density of 10 W / cm ² to 1,000,000 W / cm ² for 1 / 10,000,000 ~ 10 seconds. The method of claim 24, Fabrication of an organic light emitting display device, characterized in that the length of the first conductive layer in the clockwise direction and the length of the first conductive layer in the counterclockwise direction are the same based on the second conductive layer and the third conductive layer. Way. The method of claim 24, The second conductive layer and the third conductive layer is exposed to the outside, the manufacturing method of the organic light emitting display device. Providing a substrate including a pixel region and an encapsulation region; Forming an organic light emitting display device on the pixel area of the substrate; Providing an encapsulation substrate having an encapsulation area and an electric field application area; And Bonding the encapsulation substrate and the substrate so that the encapsulation region of the encapsulation substrate and the encapsulation region of the substrate correspond to each other; The encapsulation substrate may include a first conductive layer positioned in an encapsulation region of the encapsulation substrate and formed in a first direction; A second conductive layer positioned in an encapsulation area of the encapsulation substrate and formed in a second direction; A third conductive layer formed in the electric field application region of the encapsulation substrate and extending from the first conductive layer; And a fourth conductive layer formed in the electric field applying region of the encapsulation substrate and extending from the second conductive layer. 31. The method of claim 30, And a glass frit formed on the first conductive layer and the second conductive layer. The method of claim 31, wherein The method of claim 1, wherein the first conductive layer and the second conductive layer are connected in series. 31. The method of claim 30, After the bonding of the encapsulation substrate and the substrate, further comprising adhering and encapsulating the encapsulation substrate and the substrate, And bonding the encapsulating substrate to the substrate to seal the substrate includes melting the glass frit by applying an electric field to the third conductive layer or the fourth conductive layer. The method of claim 33, wherein The applying of the electric field is a method of manufacturing an organic light emitting display device, characterized in that for applying a power density of 10 W / cm ² to 1,000,000 W / cm ² for 1 / 10,000,000 ~ 10 seconds. 31. The method of claim 30, The third conductive layer and the fourth conductive layer are exposed to the outside, the manufacturing method of the organic light emitting display device. The method of claim 33, wherein The third conductive layer includes an upper third conductive layer and a lower third conductive layer, The applying of the electric field to the third conductive layer is to apply an electric field to the upper third conductive layer and the lower third conductive layer manufacturing method of an organic light emitting display device. The method of claim 33, wherein The fourth conductive layer includes a right fourth conductive layer and a left fourth conductive layer, And applying an electric field to the fourth conductive layer applies an electric field to the right fourth conductive layer and the left fourth conductive layer.

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