KR20110064388A - Lighting device - Google Patents

Abstract

PURPOSE: A light emitting device is provided to divide a P type electrode with a relatively high resistance into two, thereby effectively emitting heat. CONSTITUTION: A buffer layer is formed on a substrate. An N type semiconductor layer is formed on the buffer layer. A first light emitting unit(100) includes a first activation layer, a first P type semiconductor layer, and a first P type electrode(140). A second light emitting unit(200) includes a second activation layer, a second P type semiconductor layer, and a second P type electrode(240). An N type electrode(30) is formed on the third region of the N type semiconductor layer.

Description

Light Emitting Device {LIGHTING DEVICE}

The present invention relates to a light emitting device, and more particularly, to a light emitting device having a light emitting diode electrically connected to a conductive pattern of a substrate using a wire bonding method.

A light emitting device having a light emitting diode has a low power consumption, a long life, can be installed in a narrow space, and has a strong resistance to vibration. Such a light emitting device is used as a display device or a backlight, and research for applying the light emitting device for general lighting has been actively conducted.

In general, the light emitting device includes a plurality of light emitting diode chips that generate light, for example, chips of a lateral structure type. In order for the LED chips to be connected to each other in parallel or in series, first, the light emitting device is bonded to a substrate and a conductive pattern is formed. Then, the electrode and the conductive pattern of the light emitting device are connected using a wire bonding method. Was electrically connected. That is, the electrodes of each of the LED chips are electrically connected to the conductive pattern by the wire bonding method.

On the other hand, although the size of the light emitting device has recently decreased, as the number of the light emitting diode chips is mounted a certain number and the demand of the light emitting device to be driven at a constant power increases, the distance between the light emitting diode chips is also considered important. In addition, as the area of the light emitting diode chip increases, there is an increasing demand for an electrode pattern of the light emitting diode chip capable of evenly spreading current.

However, when the electrode of the light emitting device and the conductive pattern are electrically connected by the wire bonding method, the time required for bonding the light emitting device individually increases, and the possibility of disconnection or short circuit increases due to the wire bonding. do. Furthermore, when the plurality of light emitting diode chips are mounted in a predetermined space, a problem arises in that required space increases.

In addition, when two or more light emitting diode chips are mounted and used in one light emitting device, current may be concentrated in any one of the light emitting diode chips due to Vf deviation of each of the light emitting diode chips. This problem is emerging as a large factor that inhibits uniform light emission.

Accordingly, the present invention is to solve such a conventional problem, the problem to be solved by the present invention is to provide a light emitting device that can prevent the phenomenon of current is directed to any one of the LED chip while reducing the wire bonding process time. I will.

The light emitting device according to the embodiment of the present invention described above includes an N-type semiconductor layer, a first light emitting part, a second light emitting part, and an N-type electrode.

The N-type semiconductor layer is formed on a substrate. The first light emitting part includes a first active layer formed on a first region of the N-type semiconductor layer, a first P-type semiconductor layer formed on the first active layer, and a first P-type formed on the first P-type semiconductor layer. An electrode. The second light emitting part is a second active layer formed on the second region of the N-type semiconductor layer, a second P-type semiconductor layer formed on the second active layer, and a second P-type formed on the second P-type semiconductor layer. An electrode. The N-type electrode includes an N-type electrode formed on a third region of the N-type semiconductor layer spaced apart from the first and second light emitting portions.

The N-type semiconductor layer may have a substantially rectangular planar shape having a length in a first direction longer than a length in a second direction perpendicular to the first direction, wherein the first and second light emitting parts The N-type electrodes may be spaced apart from each other on both sides in the first direction. In this case, the first and second light emitting parts may have a planar shape that is symmetrical with respect to the center line passing through the center of the N-type semiconductor layer along the center of the N-type semiconductor layer or the second direction.

The N-type electrode may include an N-type electrode pad portion to which a negative voltage applying line for applying a negative voltage is wire-bonded, a first N-type electrode extension portion extending from the N-type electrode pad portion to the first light emitting portion, and And a second N-type electrode extension part extending from the N-type electrode pad part to the second light emitting part side. In this case, the first and second N-type electrode extensions may have a planar shape that is symmetrical with respect to a center line passing through the center of the N-type semiconductor layer along the center of the N-type semiconductor layer or the second direction. have.

The distance from the first N-type electrode extension portion to the first light emitting portion may be shorter than the distance from the N-type electrode pad portion to the first light emitting portion, and the second light emission from the second N-type electrode extension portion. The distance to the portion may be shorter than the distance from the N-type electrode pad portion to the second light emitting portion. In this case, the distance from the first N-type electrode extension part to the first light emitting part may be substantially the same as the distance from the second N-type electrode extension part to the second light emitting part.

The first and second N-type electrode extensions may have a structure in which the sheet resistance with the N-type semiconductor layer decreases as the first and second N-type electrode extension portions move away from the N-type electrode pad portion. For example, the first and second N-type electrode extensions may have a planar shape that becomes wider as the first and second N-type electrode extensions extend away from the N-type electrode pad portion.

The first P-type electrode may include a first P-type electrode pad part wire-bonded with a first positive voltage applying line for applying a positive voltage, and a first extension to the N-type electrode side from the first P-type electrode pad part. The second P-type electrode may include an extension portion of the first P-type electrode, and the second P-type electrode may include a second P-type electrode pad portion wire-bonded with a second positive voltage applying line for applying the positive voltage, and the second P-type electrode. A second P-type electrode extension part extending from an electrode pad part toward the N-type electrode side may be included.

The first P-type electrode extension may have a planar shape corresponding to the first N-type electrode extension, and the second P-type electrode extension may have a planar shape corresponding to the second N-type electrode extension. have. In addition, the first P-type electrode extension may have a length substantially the same as that of the first N-type electrode extension, and the second P-type electrode extension may have a length substantially equal to that of the second N-type electrode extension. Can have

The first light emitting part may further include a first transparent electrode layer formed between the first P-type semiconductor layer and the first P-type electrode, and the second light emitting part may further include the second P-type semiconductor layer and the second P-type electrode. It may further include a second transparent electrode layer formed between. Here, the first P-type electrode may be disposed on the opposite side of the N-type electrode of the edge of the first transparent electrode layer, the second P-type electrode of the N-type electrode of the edge of the second transparent electrode layer On the opposite side.

At least one first current flow obstruction groove may be formed in the first transparent electrode layer to equalize the flow of current between the N-type electrode and the first P-type electrode, and the N-type may be formed in the second transparent electrode layer. At least one second current flow obstruction groove may be formed between the electrode and the second P-type electrode to equalize the flow of current. For example, the first current flow obstruction groove may be formed along a point where the distance between the first P-type electrode and the N-type electrode is the shortest, and the second current flow obstruction groove is the second P-type. The distance between the electrode and the N-type electrode may be formed along the shortest point.

According to the light emitting device of the present invention, as the N-type electrode is disposed between the first and second light emitting portions to provide charge to each of the first and second light emitting portions, the process of wire bonding to the N-type electrode is shortened. It is possible to make efficient use of space when mounting the LED chip on the substrate.

In addition, since the P-type electrode having a relatively high resistance is formed by dividing into two, heat emission from the light emitting device can be effectively performed.

In addition, as the first N-type electrode extension part and the first P-type electrode extension part have a planar shape corresponding to each other, and the second N-type electrode extension part and the second P-type electrode extension part have a planar shape corresponding to each other, Uniform current spreading may be formed in each of the first and second light emitting units.

In addition, as the first and second light emitting parts have a planar shape that is symmetrical with each other based on a center line passing through the center of the N-type semiconductor layer or the center of the N-type semiconductor layer, any one of the light emitting diodes as in the related art. This can reduce the current draw into the chip.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the drawings.

As the inventive concept allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the text. However, this is not intended to limit the present invention to the specific disclosed form, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention.

Like reference numerals are used for like elements in describing each drawing. In the accompanying drawings, the dimensions of the structures are shown in an enlarged scale than actual for clarity of the invention.

The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component. Singular expressions include plural expressions unless the context clearly indicates otherwise.

In this application, the terms "comprises", "having", and the like are used to specify that a feature, a number, a step, an operation, an element, a part or a combination thereof is described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.

Also, unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings.

<Example 1 of Light-Emitting Element>

1 is a plan view illustrating a light emitting device according to a first exemplary embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line II ′ of FIG. 1.

1 and 2, the light emitting device according to the present embodiment includes a substrate 10, an N-type semiconductor layer 20, a first light emitting part 100, a second light emitting part 200, and an N-type electrode ( 30).

The substrate 10 is preferably a sapphire substrate or a silicon carbide substrate (SiC substrate), but other substrates such as glass substrates and ceramic substrates may be used.

The N-type semiconductor layer 20 is formed on the substrate 10. The N-type semiconductor layer 20 may be formed of a gallium nitride-based compound semiconductor, and may be formed of, for example, gallium nitride (N-GaN) containing N-type impurities. In this case, as the N-type impurity, a silane including silicon (Si), for example, monosilane (SiH 4) or disilane (SiH 6), may be used. In addition, germanium (Ge), tin (Sn), and tellurium ( Materials including Te), sulfur (S) and the like may be used.

The N-type semiconductor layer 20 may have a rectangular planar shape. Preferably, the N-type semiconductor layer 20 has a substantially rectangular planar shape in which a length in a first direction D1 is longer than a length in a second direction D2 perpendicular to the first direction D1. May have

Meanwhile, a buffer layer (not shown) may be further formed between the substrate 10 and the N-type semiconductor layer 20. The buffer layer is formed of the same material as the N-type semiconductor layer 20 to mitigate lattice mismatch between the substrate 10 and the N-type semiconductor layer 20. For example, the buffer layer may be formed of a gallium nitride-based compound semiconductor, for example, gallium nitride (GaN) containing no impurities.

The first light emitting part 100 is formed on the first area of the N-type semiconductor layer 20, and the second light emitting part 200 is formed on the second area of the N-type semiconductor layer 20. do. In addition, the N-type electrode 30 is formed on a third region of the N-type semiconductor layer 20 that separates the first and second light emitting parts 100 and 200 from each other. Here, when the N-type semiconductor layer 20 has a rectangular planar shape in which the length of the first direction D1 is longer than the length of the second direction D2 as shown in FIG. The light emitting parts 100 and 200 are spaced apart from each other on both sides of the N-type electrode 30 in the first direction D1.

The first light emitting part 100 includes a first active layer 110, a first P-type semiconductor layer 120, a first transparent electrode layer 130, and a first P-type electrode 140, and the second light emission. The unit 200 includes a second active layer 210, a second P-type semiconductor layer 220, a second transparent electrode layer 230, and a second P-type electrode 240.

The first active layer 110 is formed on the first region of the N-type semiconductor layer 20, and the second active layer 210 is formed on the second region of the N-type semiconductor layer 20. The first and second active layers 110 and 120 are made of the same material, and preferably made of gallium nitride (GaN) containing no impurities. At this time, the composition element and the composition ratio of the active layer can be determined to emit light of the required wavelength, for example ultraviolet light or blue light.

The first and second active layers 110 and 210 may include a single layer formed by alternately stacking a well layer having a small energy band gap and a barrier layer having a larger energy band gap than the well layer. It may be formed of a quantum well structure or a multiple quantum well structure. For example, the first and second active layers 110 and 210 may be formed of a multi-quantum well structure made of indium gallium nitride (InGaN) / gallium nitride (GaN) to generate blue light, or to generate ultraviolet light. Multi-quantum well structure consisting of gallium nitride (GaN) / gallium nitride (AlGaN), indium aluminum gallium nitride (InAlGaN) / indium aluminum gallium nitride (InAlGaN), indium gallium nitride (InGaN) / gallium nitride (AlGaN) Can be formed. In this case, the internal quantum efficiency of the LED is improved by controlling the wavelength of light generated in the active layer by changing the composition ratio of indium (In) or aluminum (Al), or by changing the depth, the number and thickness of the quantum wells in the active layer. You can.

The first P-type semiconductor layer 120 is formed on the first active layer 110, and the second P-type semiconductor layer 220 is formed on the first active layer 210. The first and second P-type semiconductor layers 120 and 220 may be formed of the same gallium nitride-based compound semiconductor, and may be formed of, for example, gallium nitride (P-GaN) containing P-type impurities. . In this case, the P-type impurities include, for example, zinc (Zn), cadmium (Cd), belium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), and the like. Materials may be used.

The first transparent electrode layer 130 is formed on the first P-type semiconductor layer 120, and the second transparent electrode layer 230 is formed on the second P-type semiconductor layer 220. The first and second transparent electrode layers 130 and 230 are conductive materials through which light can be transmitted, and are formed of, for example, indium tin oxide (ITO) or nickel (Ni) / gold (Au). Can be.

The first P-type electrode 140 is formed on a portion of the first transparent electrode layer 130, and the second P-type electrode 240 is formed on a portion of the second transparent electrode layer 230. do. The first and second P-type electrodes 140 and 240 may be made of the same opaque conductive material, for example, titanium (Ti) / aluminum (Al).

The N-type electrode 30 is formed on a third region of the N-type semiconductor layer 20 which is not covered by the first and second light emitting parts 100 and 200, and thus the first and second light emission. The parts 100 and 200 are spaced apart from each other. The N-type electrode 30 may be made of the same opaque conductive material as the first and second P-type electrodes 140 and 240, and may be made of, for example, titanium (Ti) / aluminum (Al). .

In the meantime, a method of manufacturing the light emitting device according to the present embodiment will be described in brief as follows.

First, the buffer layer and the N-type semiconductor layer 20 on the substrate 10 by using metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) technology. After the formation, the active layer and the P-type semiconductor layer are sequentially formed thereon. Subsequently, a transparent electrode layer is formed on the P-type semiconductor layer by sputtering or the like, and then etching is performed using a method such as dry etching from the transparent electrode layer to a portion of the N-type semiconductor layer 20. do. As a result, the active layer is divided into the first and second active layers 110 and 210, and the P-type semiconductor layer is divided into the first and second P-type semiconductor layers 120 and 220. The transparent electrode layer is divided into the first and second transparent electrode layers 130 and 230. In addition, a portion of the N-type semiconductor layer 20, that is, a third region of the N-type semiconductor layer 20 is exposed to the outside. Subsequently, after forming an electrode metal layer on the etched upper surface by sputtering or the like, the first and second P-type electrodes 140 and 240 may be formed using a lift off technique or the like. The N-type electrode 30 is formed.

Hereinafter, design principles for the planar arrangement or planar shape of the first light emitting unit 100, the second light emitting unit 200, and the N-type electrode 30 will be described.

The first and second light emitting parts 100 and 200 have a planar shape that is symmetrical with respect to the center of the N-type semiconductor layer 20. That is, the first active layer 110, the first P-type semiconductor layer 120, the first transparent electrode layer 130, and the first P-type electrode 140 are the second active layer 210 and the second. Each of the P-type semiconductor layer 220, the second transparent electrode layer 230, and the second P-type electrode 240 has a planar shape that is symmetric with respect to the center of the N-type semiconductor layer 20. Alternatively, the first and second light emitting parts 100 and 200 may pass through the center line of the N-type semiconductor layer 20 in the second direction D2 (hereinafter, referred to as 'N-type semiconductor layer 20'). A vertical center line) may be symmetrical to each other.

The N-type electrode 30 is an N-type electrode pad portion 32 to which a negative voltage applying line 40 for applying a negative voltage is wire-bonded, and the first light emitting portion from the N-type electrode pad portion 32. The first N-type electrode extension part 34 extending toward the (100) side and the second N-type electrode extension part 36 extending from the N-type electrode pad part 32 to the second light emitting part 200 side are disposed. It may include. Meanwhile, in the drawing, the point where the wire bonding is made is indicated by a circular dotted line.

The first and second N-type electrode extensions 34 and 36 have a planar shape that is symmetrical with respect to the center of the N-type semiconductor layer or the vertical center line of the N-type semiconductor layer 20. Furthermore, the entirety of the N-type electrode 30 may have a planar shape that is symmetrical with respect to the center of the N-type semiconductor layer or the vertical center line of the N-type semiconductor layer 20.

The distance from the first N-type electrode extension part 34 to the first light emitting part 100 may be shorter than the distance from the N-type electrode pad part 32 to the first light emitting part 100. The distance from the second N-type electrode extension part 36 to the second light emitting part 200 may be shorter than the distance from the N-type electrode pad part 32 to the second light emitting part 200. In this case, the distance from the first N-type electrode extension part 34 to the first light emitting part 100 is substantially equal to the distance from the second N-type electrode extension part 36 to the second light emitting part 200. Same as In addition, the distance from the N-type electrode pad part 32 to the second light emitting part 200 is substantially the same as the distance from the N-type electrode pad part 32 to the second light emitting part 200. .

The first and second N-type electrode extensions 34 and 36 may have a structure in which the sheet resistance with the N-type semiconductor layer 20 decreases as the distance from the N-type electrode pad portion 32 increases. Therefore, the charge applied to the N-type electrode pad part 32 may be uniformly provided from the beginning to the end of the first and second N-type electrode extensions 34 and 36. For example, the first and second N-type electrode extension parts 34 and 36 may have a planar shape that becomes wider as the first and second N-type electrode extension parts 34 and 36 move away from the N-type electrode pad part 32.

Meanwhile, the first P-type electrode 140 may include a first P-type electrode pad part 142 to which a first positive voltage applying line 50 for applying a positive voltage is wire-bonded, and the first P-type electrode. A first P-type electrode extension part 144 extending from the pad part 142 to the N-type electrode 30 side may be included. In addition, the second P-type electrode 240 includes a second P-type electrode pad part 242 to which a second positive voltage applying line 60 is wire-bonded to apply the positive voltage, and the second P-type electrode. A second P-type electrode extension part 244 extending from the electrode pad part 242 to the N-type electrode 30 side may be included.

The first P-type electrode extension 144 has a planar shape corresponding to the first N-type electrode extension 34, and the second P-type electrode extension 244 extends the second N-type electrode. It may have a planar shape corresponding to the portion 36. In addition, the first P-type electrode extension 144 may have a length substantially the same as that of the first N-type electrode extension 34, and the second P-type electrode extension 244 may have the second length. It may have a length substantially the same as the N-type electrode extension (36).

The first P-type electrode 140 may be disposed on an opposite side of the N-type electrode 30 among edges of the first transparent electrode layer 130, and the second P-type electrode 240 may be disposed on the second side. The edge of the transparent electrode layer 230 may be disposed on an opposite side of the N-type electrode 30. At this time, the first transparent electrode layer 130 has at least one first current flow obstruction groove 132 for equalizing the flow of current between the N-type electrode 30 and the first P-type electrode 140. At least one second current flow obstruction groove may be formed in the second transparent electrode layer 230 to equalize the flow of current between the N-type electrode 30 and the second P-type electrode 240. 242 may be formed.

The first current flow obstruction groove 132 may be formed continuously or discontinuously along a point where the distance between the first P-type electrode 140 and the N-type electrode 30 is the shortest. The second current flow obstruction groove 232 may be formed continuously or discontinuously along the point where the distance between the second P-type electrode 240 and the N-type electrode 30 is the shortest. Meanwhile, the first and second current flow obstruction grooves 132 and 232 according to the present embodiment may include a groove in which a part of the first and second transparent electrode layers 130 and 230 are recessed, and the first and second current flow disturbance grooves 132 and 232. A portion of the first and second transparent electrode layers 130 and 230 may be formed to expose the first and second P-type semiconductor layers 120 and 220.

Hereinafter, a detailed planar arrangement or planar shape of the first light emitting unit 100, the second light emitting unit 200, and the N-type electrode 30 will be described with reference to FIG. 1.

First, the N-type electrode 30 will be described. The N-type electrode pad part 32 has a planar shape extending along a vertical center line of the N-type semiconductor layer 20. The first N-type electrode extension part 34 is disposed in the first direction D1 from one end of the N-type electrode pad part 32 in the second direction D2 toward the first P-side electrode 140. Extends along The second N-type electrode extension part 36 is in the first direction D1 from the other end of the N-type electrode pad part 32 in the second direction D2 toward the second P-side electrode 240. Extends along

The first N-type electrode extension part 34 has a length and a width substantially the same as that of the second N-type electrode extension part 36. The width of the N-type electrode pad part 32 is wider than the width of the first N-type electrode extension part 34 or the first N-type electrode extension part 36. As such, the N-type electrode 30 has a planar shape that is substantially symmetrical with respect to the center of the N-type semiconductor layer 20. Meanwhile, although the first and second N-type electrode extensions 34 and 36 may have the same width and extend as shown in FIG. 1, the first and second N-type electrode extensions 34 and 36 may be far from the N-type electrode pad part 32 unlike FIG. 1. It may have a structure that increases in width.

Next, the first and second light emitting parts 100 and 200 will be described. The first and second light emitting parts 100 and 200 may be disposed at both sides of the N-type electrode 30 in the first direction D1. In this case, the first and second light emitting parts 100 and 200 have a planar shape that is substantially symmetric with respect to the center of the N-type semiconductor layer 20. That is, the first active layer 110 is symmetrical with the second active layer 210, and the first P-type semiconductor layer 120 is symmetrical with the second P-type semiconductor layer 220. The first transparent electrode layer 130 is symmetrical with the second transparent electrode layer 230, and the first P-type electrode 140 is symmetrical with the second P-type electrode 240. Hereinafter, the first and second P-type electrodes 140 and 240 and the first and second transparent electrode layers 130 and 230 will be described in detail.

The first P-type electrode pad part 142 has a planar shape extending along the second direction D2 at one end of the N-type semiconductor layer 20 in the first direction D1. The second P-type electrode pad part 242 has a planar shape extending along the second direction D2 at the other end of the N-type semiconductor layer 20 in the first direction D1. The first P-type electrode extension part 144 is disposed in the first direction D1 toward the N-type electrode 30 from one end of the first P-type electrode pad part 142 in the second direction D2. The second P-type electrode extension part 244 extends from the one end of the second P-type electrode pad part 242 in the second direction D2 toward the N-type electrode 30 side. It extends along the first direction D1. Here, one end of the second P-type electrode pad part 242 in the second direction D2 and one end of the first P-type electrode pad part 142 in the second direction D2 and the It is arrange | positioned in the position which becomes symmetrical with respect to the center of the N type semiconductor layer 20. FIG.

The first P-type electrode pad part 142 has the same length and width as the second P-type electrode pad part 242, and the first P-type electrode extension part 144 is the second P-type. It has substantially the same length and width as electrode extension 244. The width of the first P-type electrode pad part 142 is wider than the width of the first P-type electrode extension part 144, and the width of the second P-type electrode pad part 242 is the second P-type electrode. It is wider than the width of the extension 244. As described above, the first and second P-type electrodes 140 and 240 have a planar shape that is substantially symmetrical with respect to the center of the N-type semiconductor layer 20.

The distance between the N-type electrode pad part 32 and the first light emitting part 100 and the distance between the N-type electrode pad part 32 and the second light emitting part 200 are substantially the same, and the first N The distance between the mold electrode extension 34 and the first light emitting part 100 and the distance between the second N-type electrode extension 34 and the second light emitting part 200 are also substantially the same. In this case, a distance between the first N-type electrode extension part 34 and the first light emitting part 100 may be shorter than a distance between the N-type electrode pad part 32 and the first light emitting part 100. The distance between the second N-type electrode extension part 36 and the second light emitting part 200 may be shorter than the distance between the N-type electrode pad part 32 and the second light emitting part 200. In addition, the distance between the first P-type electrode extension 144 and the first N-type electrode extension 34 is the second P-type electrode extension 244 and the second N-type electrode extension 36 Is substantially equal to the distance between

Meanwhile, at least one first current flow obstruction groove 132 is formed in the first transparent electrode layer 130, and at least one second current flow obstruction groove 242 is formed in the second transparent electrode layer 230. Is formed. However, in some cases, the first and second current flow disturbance grooves 142 and 242 may be omitted. The first current flow obstruction groove 132 may be formed continuously or discontinuously along a point where the distance between the first P-type electrode 140 and the N-type electrode 30 is the shortest. The second current flow obstruction groove 232 may be formed continuously or discontinuously along the point where the distance between the second P-type electrode 240 and the N-type electrode 30 is the shortest.

The first current flow obstruction groove 132 is formed in an area where the first P-type electrode extension 144 and the first N-type electrode extension 34 overlap in the first direction D1. For example, it may be formed continuously or discontinuously along the first direction D1 at an intermediate point between the first P-type electrode extension 144 and the first N-type electrode extension 34. have. In addition, the second current flow obstruction groove 232 may be formed in an area where the second P-type electrode extension 244 and the second N-type electrode extension 36 overlap in the first direction D1. For example, continuously or discontinuously along the first direction D1 at an intermediate point between the second P-type electrode extension 244 and the second N-type electrode extension 36. Can be. In this case, the first and second current flow obstruction grooves 132 and 232 have a planar shape that is substantially symmetrical with respect to the center of the N-type semiconductor layer 20.

<Example 2 of Light-Emitting Element>

3 is a plan view illustrating a light emitting device according to a second exemplary embodiment of the present invention.

In the light emitting device according to the present exemplary embodiment, except for the planar arrangement or the planar shape of the first light emitting part 100, the second light emitting part 200, and the N-type electrode 30, the first light emitting device described with reference to FIGS. 1 and 2 will be described. Since they are substantially the same as the light emitting device according to the embodiment, detailed descriptions of the same contents as those of the first embodiment will be omitted, and the same reference numerals will be given to the same components as those of the first embodiment.

Referring to FIG. 3, the N-type electrode 30 includes an N-type electrode pad part 32, a first N-type electrode extension part 34, and a second N-type electrode extension part 36.

The N-type electrode pad part 32 has a planar shape extending along a vertical center line of the N-type semiconductor layer 20. The first N-type electrode extension part 34 is disposed from the one end of the N-type electrode pad part 32 in the second direction D2 toward the first light emitting part 100 in the first direction D1. Extends along. The second N-type electrode extension part 36 is in the first direction D1 toward the second light emitting part 200 from the other end of the N-type electrode pad part 32 in the second direction D2. Extends along.

The first N-type electrode extension part 34 has a length and a width substantially the same as that of the second N-type electrode extension part 36. The width of the N-type electrode pad part 32 is wider than the width of the first N-type electrode extension part 34 or the first N-type electrode extension part 36. As such, the N-type electrode 30 has a planar shape that is substantially symmetrical with respect to the center of the N-type semiconductor layer 20. Meanwhile, the first and second N-type electrode extension parts 34 and 36 may have the same width and extend as shown in FIG. 3, but unlike the FIG. 3, the first and second N-type electrode extension parts 34 and 36 are far from the N-type electrode pad part 32. It may have a structure that increases in width.

The first light emitting part 100 includes a first active layer 110, a first P-type semiconductor layer 120, a first transparent electrode layer 130, and a first P-type electrode 140, and the second light emission. The unit 200 includes a second active layer 210, a second P-type semiconductor layer 220, a second transparent electrode layer 230, and a second P-type electrode 240.

The first and second light emitting parts 100 and 200 may be disposed at both sides of the N-type electrode 30 in the first direction D1. In this case, the first and second light emitting parts 100 and 200 have a planar shape that is substantially symmetric with respect to the center of the N-type semiconductor layer 20. That is, the first active layer 110 is symmetrical with the second active layer 210, and the first P-type semiconductor layer 120 is symmetrical with the second P-type semiconductor layer 220. The first transparent electrode layer 130 is symmetrical with the second transparent electrode layer 230, and the first P-type electrode 140 is symmetrical with the second P-type electrode 240. Hereinafter, the first and second P-type electrodes 140 and 240 and the first and second transparent electrode layers 130 and 230 will be described in detail.

The first P-type electrode 140 extends from one end of the N-type semiconductor layer 20 in the first direction D1 toward the N-type electrode 30 along the first direction D1. The first N-type electrode extending part 34 is disposed on the opposite side. In addition, the second P-type electrode 240 extends along the first direction D1 toward the N-type electrode 30 from the other end of the N-type semiconductor layer 20 in the first direction D1. On the opposite side of the second N-type electrode extension part 36. Here, each of the first and second P-type electrodes 140 and 240 is not overlapped or minimally overlapped with each of the first and second N-type electrode extensions 34 and 36 in the first direction D1. It may extend to overlap only in some areas. Meanwhile, the first and second P-type electrodes 140 and 240 have substantially the same length and width. As described above, the first and second P-type electrodes 140 and 240 have a planar shape that is substantially symmetrical with respect to the center of the N-type semiconductor layer 20.

The distance between the N-type electrode pad part 32 and the first light emitting part 100 and the distance between the N-type electrode pad part 32 and the second light emitting part 200 are substantially the same, and the first N The distance between the mold electrode extension 34 and the first light emitting part 100 and the distance between the second N-type electrode extension 34 and the second light emitting part 200 are also substantially the same. In this case, the distance between the first N-type electrode extension part 34 and the first light emitting part 100 may be shorter than the distance between the N-type electrode pad part 32 and the first light emitting part 100. The distance between the second N-type electrode extension part 36 and the second light emitting part 200 may be shorter than the distance between the N-type electrode pad part 32 and the second light emitting part 200.

Meanwhile, at least one first current flow obstruction groove 132 is formed in the first transparent electrode layer 130, and at least one second current flow obstruction groove 242 is formed in the second transparent electrode layer 230. Is formed. In this case, the first and second current flow obstruction grooves 132 and 232 have a planar shape that is substantially symmetrical with respect to the center of the N-type semiconductor layer 20. In some cases, the first and second current flow obstruction grooves 142 and 242 may be omitted.

The first current flow obstruction groove 132 may be formed continuously or discontinuously along a point where the distance between the first P-type electrode 140 and the N-type electrode 30 is the shortest. Specifically, the first current flow obstruction groove 132 is an area where the first P-type electrode extension 144 and the first N-type electrode extension 34 overlap each other in the first direction D1. And formed continuously within the first direction D1 at the intermediate point between the first P-type electrode extension 144 and the first N-type electrode extension 34, for example. Can be formed.

In addition, the second current flow obstruction groove 232 may be formed continuously or discontinuously along the point where the distance between the second P-type electrode 240 and the N-type electrode 30 is the shortest. Specifically, the second current flow obstruction groove 232 is an area where the second P-type electrode extension 244 and the second N-type electrode extension 36 overlap in the first direction D1. And formed continuously within the first direction D1 at an intermediate point between the second P-type electrode extension 244 and the second N-type electrode extension 36. Can be formed.

<Example 3 of Light-Emitting Element>

4 is a plan view illustrating a light emitting device according to a third exemplary embodiment of the present invention.

In the light emitting device according to the present exemplary embodiment, except for the planar arrangement or the planar shape of the first light emitting part 100, the second light emitting part 200, and the N-type electrode 30, the first light emitting device described with reference to FIGS. 1 and 2 will be described. Since they are substantially the same as the light emitting device according to the embodiment, detailed descriptions of the same contents as those of the first embodiment will be omitted, and the same reference numerals will be given to the same components as those of the first embodiment.

Referring to FIG. 4, the N-type electrode 30 includes an N-type electrode pad part 32, a first N-type electrode extension part 34, and a second N-type electrode extension part 36.

The N-type electrode pad part 32 has a planar shape extending along a vertical center line of the N-type semiconductor layer 20. The first and second N-type electrode extensions 34 may have the first and second light emitting parts 100 and 200 from one end of the N-type electrode pad part 32 in the second direction D2. Laterally extend along the first direction D1, respectively. As such, the N-type electrode 30 has a planar shape that is symmetrical with respect to the vertical center line of the N-type semiconductor layer 20, for example, a T-shaped plane shape.

The first N-type electrode extension part 34 has a length and a width substantially the same as that of the second N-type electrode extension part 36. The width of the N-type electrode pad part 32 may be wider than the width of the first N-type electrode extension part 34 or the first N-type electrode extension part 36. The length of each of the first and second N-type electrode extensions 34 and 36 may be shorter than the length of the N-type electrode pad part 32 as shown in FIG. 4, but may be formed differently. In addition, the first and second N-type electrode extension parts 34 and 36 may have a structure having the same width and extend as shown in FIG. 4. It may have a structure of increasing width.

The first light emitting part 100 includes a first active layer 110, a first P-type semiconductor layer 120, a first transparent electrode layer 130, and a first P-type electrode 140, and the second light emission. The unit 200 includes a second active layer 210, a second P-type semiconductor layer 220, a second transparent electrode layer 230, and a second P-type electrode 240.

The first and second light emitting parts 100 and 200 may be disposed at both sides of the N-type electrode 30 in the first direction D1. In this case, the first and second light emitting parts 100 and 200 have a planar shape that is substantially symmetrical with respect to the vertical center line of the N-type semiconductor layer 20. That is, the first active layer 110 is symmetrical with the second active layer 210, and the first P-type semiconductor layer 120 is symmetrical with the second P-type semiconductor layer 220. The first transparent electrode layer 130 is symmetrical with the second transparent electrode layer 230, and the first P-type electrode 140 is symmetrical with the second P-type electrode 240. Hereinafter, the first and second P-type electrodes 140 and 240 and the first and second transparent electrode layers 130 and 230 will be described in detail.

The first P-type electrode 140 includes a first P-type electrode pad 142 and a first P-type electrode extension 144, and the second P-type electrode 240 is a second P-type electrode. The pad part 242 and the second P-type electrode extension part 244 are included.

The first P-type electrode pad part 142 has a planar shape extending along the second direction D2 at one end of the N-type semiconductor layer 20 in the first direction D1. The second P-type electrode pad part 242 has a planar shape extending along the second direction D2 at the other end of the N-type semiconductor layer 20 in the first direction D1. The first P-type electrode extension part 144 is disposed in the first direction D1 toward the N-type electrode 30 from one end of the first P-type electrode pad part 142 in the second direction D2. The second P-type electrode extension part 244 extends from the one end of the second P-type electrode pad part 242 in the second direction D2 toward the N-type electrode 30 side. It extends along the first direction D1. Here, one end of the second P-type electrode pad part 242 in the second direction D2 and one end of the first P-type electrode pad part 142 in the second direction D2 and the The N-type semiconductor layer 20 is disposed at a position symmetrical with respect to the vertical center line. As such, the first and second P-type electrodes 140 and 240 have a planar shape that is substantially symmetrical with respect to the vertical center line of the N-type semiconductor layer 20, for example, L-shaped. It may have a planar shape.

The first P-type electrode pad part 142 has the same length and width as the second P-type electrode pad part 242, and the first P-type electrode extension part 144 is the second P-type. It has substantially the same length and width as electrode extension 244. The width of the first P-type electrode pad part 142 is wider than the width of the first P-type electrode extension part 144, and the width of the second P-type electrode pad part 242 is the second P-type electrode. It is wider than the width of the extension 244.

The distance between the N-type electrode pad part 32 and the first light emitting part 100 and the distance between the N-type electrode pad part 32 and the second light emitting part 200 are substantially the same, and the first N The distance between the mold electrode extension 34 and the first light emitting part 100 and the distance between the second N-type electrode extension 34 and the second light emitting part 200 are also substantially the same. In this case, a distance between the first N-type electrode extension part 34 and the first light emitting part 100 may be shorter than a distance between the N-type electrode pad part 32 and the first light emitting part 100. The distance between the second N-type electrode extension part 36 and the second light emitting part 200 may be shorter than the distance between the N-type electrode pad part 32 and the second light emitting part 200. In addition, the distance between the first P-type electrode extension 144 and the first N-type electrode extension 34 is the second P-type electrode extension 244 and the second N-type electrode extension 36 Is substantially equal to the distance between

Meanwhile, at least one first current flow obstruction groove 132 is formed in the first transparent electrode layer 130, and at least one second current flow obstruction groove 242 is formed in the second transparent electrode layer 230. Is formed. However, in some cases, the first and second current flow disturbance grooves 142 and 242 may be omitted.

The first current flow obstruction groove 132 may be formed continuously or discontinuously along a point where the distance between the first P-type electrode 140 and the N-type electrode 30 is the shortest. The two current flow obstruction grooves 232 may be formed continuously or discontinuously along the point where the distance between the second P-type electrode 240 and the N-type electrode 30 is the shortest. In this case, the first and second current flow obstruction grooves 132 and 232 have a planar shape that is substantially symmetrical with respect to the vertical center line of the N-type semiconductor layer 20. Specifically, the first and second current flow disturbance grooves 132 and 232 surround the ends of each of the first and second P-type electrode extensions 144 and 244, for example, an L-shaped plane. It may have a shape.

<Example 4 of light emitting element>

5 is a plan view illustrating a light emitting device according to a fourth exemplary embodiment of the present invention.

In the light emitting device according to the present exemplary embodiment, except for the planar arrangement or the planar shape of the first light emitting part 100, the second light emitting part 200, and the N-type electrode 30, the first light emitting device described with reference to FIGS. 1 and 2 will be described. Since it is substantially the same as the light emitting device according to the embodiment, detailed description of the same contents as those of the first embodiment will be omitted, and the same reference numerals will be given to the same components as those of the first embodiment.

Referring to FIG. 5, the N-type electrode 30 has a shape extending along the first direction D1 at one end of the N-type semiconductor layer 20 in the second direction D2. It has a planar shape that is symmetrical with respect to the vertical center line of the N-type semiconductor layer 20. On the other hand, the N-type electrode 30 may have a structure having the same width and extend as shown in FIG. 5, but alternatively, the N-type electrode 30 has a structure in which the width increases as the N-type semiconductor layer 20 moves away from the vertical center line. It may be.

The first light emitting part 100 includes a first active layer 110, a first P-type semiconductor layer 120, a first transparent electrode layer 130, and a first P-type electrode 140, and the second light emission. The unit 200 includes a second active layer 210, a second P-type semiconductor layer 220, a second transparent electrode layer 230, and a second P-type electrode 240.

The first and second light emitting parts 100 and 200 may be disposed at both sides of the N-type electrode 30 in the first direction D1. In this case, the first and second light emitting parts 100 and 200 have a planar shape that is substantially symmetrical with respect to the vertical center line of the N-type semiconductor layer 20. That is, the first active layer 110 is symmetrical with the second active layer 210, and the first P-type semiconductor layer 120 is symmetrical with the second P-type semiconductor layer 220. The first transparent electrode layer 130 is symmetrical with the second transparent electrode layer 230, and the first P-type electrode 140 is symmetrical with the second P-type electrode 240. Meanwhile, the distance between the N-type electrode 30 and the first light emitting part 100 and the distance between the N-type electrode 30 and the second light emitting part 200 are substantially the same.

Hereinafter, the first and second P-type electrodes 140 and 240 and the first and second transparent electrode layers 130 and 230 will be described in detail.

The first and second P-type electrodes 140 and 240 face each other from both corners located farthest from the N-type electrode 30 of the N-type semiconductor layer 20, that is, the N-type. It extends in parallel with the first direction D1 toward the vertical center line of the semiconductor layer 20. As described above, the first and second P-type electrodes 140 and 240 have a planar shape that is substantially symmetrical with respect to the vertical center line of the N-type semiconductor layer 20.

At least one first current flow obstruction groove 132 is formed in the first transparent electrode layer 130, and at least one second current flow obstruction groove 242 is formed in the second transparent electrode layer 230. do. However, in some cases, the first and second current flow disturbance grooves 142 and 242 may be omitted.

The first current flow obstruction groove 132 may be formed continuously or discontinuously along a point where the distance between the first P-type electrode 140 and the N-type electrode 30 is the shortest. The second current flow obstruction groove 232 may be formed continuously or discontinuously along the point where the distance between the second P-type electrode 240 and the N-type electrode 30 is the shortest.

The first and second current flow obstruction grooves 132 and 232 have a planar shape that is substantially symmetrical with respect to the vertical center line of the N-type semiconductor layer 20. In detail, the first and second current flow obstruction grooves 132 and 232 respectively surround the opposite ends of the first direction D1 of the N-type electrode 30, for example. It may have an L-shaped plane shape. Alternatively, the first and second current flow disturbance grooves 132 and 232 may surround the opposite ends of the first and second P-type electrodes 140 and 240, for example, L−. It may have a planar shape of a ruler.

<Example 5 of Light-Emitting Element>

6 is a plan view illustrating a light emitting device according to a fifth embodiment of the present invention.

In the light emitting device according to the present exemplary embodiment, except for the planar arrangement or the planar shape of the first light emitting part 100, the second light emitting part 200, and the N-type electrode 30, the first light as described with reference to FIGS. 1 and 2 is described. Since they are substantially the same as the light emitting device according to the embodiment, detailed descriptions of the same contents as those of the first embodiment will be omitted, and the same reference numerals will be given to the same components as those of the first embodiment.

Referring to FIG. 6, the N-type electrode 30 includes an N-type electrode pad part 32, a first N-type electrode extension part 34, and a second N-type electrode extension part 36.

The N-type electrode pad part 32 has a planar shape extending from the center of the N-type semiconductor layer 20 to both sides in the first direction D1. The first N-type electrode extension part 34 extends in an A-shape from one end of the N-type electrode pad part 32 in the first direction D1 and the second N-type electrode extension part. Reference numeral 36 extends in a b-shape from the other end of the N-type electrode pad part 32 in the first direction D1. As such, the entirety of the N-type electrode 30 has a planar shape that is substantially symmetric with respect to the center of the N-type semiconductor layer 20.

The first N-type electrode extension part 34 has a length and a width substantially the same as that of the second N-type electrode extension part 36. The width of the N-type electrode pad part 32 is wider than the width of the first N-type electrode extension part 34 or the first N-type electrode extension part 36. Meanwhile, the first and second N-type electrode extension parts 34 and 36 may have the same width and extend as shown in FIG. 6, but unlike the FIG. 6, the first and second N-type electrode extension parts 34 and 36 are far from the N-type electrode pad part 32. It may have a structure that increases in width.

The first light emitting part 100 includes a first active layer 110, a first P-type semiconductor layer 120, a first transparent electrode layer 130, and a first P-type electrode 140, and the second light emission. The unit 200 includes a second active layer 210, a second P-type semiconductor layer 220, a second transparent electrode layer 230, and a second P-type electrode 240.

The first and second light emitting parts 100 and 200 may be disposed at both sides of the N-type electrode 30 in the first direction D1. In this case, the first and second light emitting parts 100 and 200 have a planar shape that is substantially symmetric with respect to the center of the N-type semiconductor layer 20. That is, the first active layer 110 is symmetrical with the second active layer 210, and the first P-type semiconductor layer 120 is symmetrical with the second P-type semiconductor layer 220. The first transparent electrode layer 130 is symmetrical with the second transparent electrode layer 230, and the first P-type electrode 140 is symmetrical with the second P-type electrode 240. Hereinafter, the first and second P-type electrodes 140 and 240 and the first and second transparent electrode layers 130 and 230 will be described in detail.

The first P-type electrode 140 includes a first P-type electrode pad 142 and a first P-type electrode extension 144, and the second P-type electrode 240 is a second P-type electrode. The pad part 242 and the second P-type electrode extension part 244 are included.

The first P-type electrode pad part 142 has a planar shape extending along the second direction D2 at one end of the N-type semiconductor layer 20 in the first direction D1. The second P-type electrode pad part 242 has a planar shape extending along the second direction D2 at the other end of the N-type semiconductor layer 20 in the first direction D1. The first P-type electrode extension part 144 may extend from the one end of the first P-type electrode pad part 142 opposite to the first N-type electrode extension part 34 toward the N-type electrode 30. The second P-type electrode extension part 244 extends along a first direction D1 and is opposite to the second N-type electrode extension part 36. It extends along the first direction D1 toward one side of the N-type electrode 30 from one end in the second direction D2. As such, the first and second P-type electrodes 140 and 240 have a planar shape that is substantially symmetrical with respect to the center of the N-type semiconductor layer 20, for example, an L-shaped plane. It may have a shape.

The first P-type electrode pad part 142 has the same length and width as the second P-type electrode pad part 242, and the first P-type electrode extension part 144 is the second P-type. It has substantially the same length and width as electrode extension 244. The width of the first P-type electrode pad part 142 is wider than the width of the first P-type electrode extension part 144, and the width of the second P-type electrode pad part 242 is the second P-type electrode. It is wider than the width of the extension 244.

The distance between the N-type electrode pad part 32 and the first light emitting part 100 and the distance between the N-type electrode pad part 32 and the second light emitting part 200 are substantially the same, and the first N The distance between the mold electrode extension 34 and the first light emitting part 100 and the distance between the second N-type electrode extension 34 and the second light emitting part 200 are also substantially the same. In this case, a distance between the first N-type electrode extension part 34 and the first light emitting part 100 may be shorter than a distance between the N-type electrode pad part 32 and the first light emitting part 100. The distance between the second N-type electrode extension part 36 and the second light emitting part 200 may be shorter than the distance between the N-type electrode pad part 32 and the second light emitting part 200. In addition, the distance between the first P-type electrode extension 144 and the first N-type electrode extension 34 is the second P-type electrode extension 244 and the second N-type electrode extension 36 Is substantially equal to the distance between

Meanwhile, at least one first current flow obstruction groove 132 is formed in the first transparent electrode layer 130, and at least one second current flow obstruction groove 242 is formed in the second transparent electrode layer 230. Is formed. However, in some cases, the first and second current flow disturbance grooves 142 and 242 may be omitted.

The first current flow obstruction groove 132 may be formed continuously or discontinuously along a point where the distance between the first P-type electrode 140 and the N-type electrode 30 is the shortest. The second current flow obstruction groove 232 may be formed continuously or discontinuously along the point where the distance between the second P-type electrode 240 and the N-type electrode 30 is the shortest. Specifically, the first current flow obstruction groove 132 is formed in an oblique direction between one end of the first P-type electrode pad part 142 and one end of the first N-type electrode extension part 34 facing each other. The second current flow blocking groove 232 may be formed in an oblique direction between one end of the second P-type electrode pad part 242 and one end of the second N-type electrode extension part 36 facing each other. Can be. In this case, the first and second current flow obstruction grooves 132 and 232 have a planar shape that is substantially symmetrical with respect to the center of the N-type semiconductor layer 20.

<Example 6 of Light-Emitting Element>

7 is a plan view illustrating a light emitting device according to a sixth embodiment of the present invention.

In the light emitting device according to the present exemplary embodiment, except for the planar arrangement or the planar shape of the first light emitting part 100, the second light emitting part 200, and the N-type electrode 30, the first light as described with reference to FIGS. 1 and 2 is described. Since they are substantially the same as the light emitting device according to the embodiment, detailed descriptions of the same contents as those of the first embodiment will be omitted, and the same reference numerals will be given to the same components as those of the first embodiment.

Referring to FIG. 7, the N-type electrode 30 includes an N-type electrode pad part 32, a first N-type electrode extension part 34, and a second N-type electrode extension part 36.

The N-type electrode pad part 32 has a planar shape extending from the center of the N-type semiconductor layer 20 to both sides of the first direction D1. The first N-type electrode extension part 34 extends in one direction of the second direction D1 from one end of the N-type electrode pad part 32 in the first direction D1. The 2 N-type electrode extension part 36 extends from the other end of the N-type electrode pad part 32 in the first direction D1 in the other direction of the second direction D1. As a result, the entirety of the N-type electrode 30 has a planar shape that is substantially symmetric with respect to the center of the N-type semiconductor layer 20.

The first N-type electrode extension part 34 has a length and a width substantially the same as that of the second N-type electrode extension part 36. The width of the N-type electrode pad part 32 is wider than the width of the first N-type electrode extension part 34 or the first N-type electrode extension part 36. Although the length of the first N-type electrode extension part 34 or the length of the first N-type electrode extension part 36 may be shorter than the length of the N-type electrode pad part 32, as shown in FIG. It may be formed long depending on.

The first light emitting part 100 includes a first active layer 110, a first P-type semiconductor layer 120, a first transparent electrode layer 130, and a first P-type electrode 140, and the second light emission. The unit 200 includes a second active layer 210, a second P-type semiconductor layer 220, a second transparent electrode layer 230, and a second P-type electrode 240.

The first and second light emitting parts 100 and 200 may be disposed at both sides of the N-type electrode 30 in the first direction D1. In this case, the first and second light emitting parts 100 and 200 have a planar shape that is substantially symmetric with respect to the center of the N-type semiconductor layer 20. That is, the first active layer 110 is symmetrical with the second active layer 210, and the first P-type semiconductor layer 120 is symmetrical with the second P-type semiconductor layer 220. The first transparent electrode layer 130 is symmetrical with the second transparent electrode layer 230, and the first P-type electrode 140 is symmetrical with the second P-type electrode 240. Hereinafter, the first and second P-type electrodes 140 and 240 and the first and second transparent electrode layers 130 and 230 will be described in detail.

The first P-type electrode 140 is disposed at an edge portion of the N-type semiconductor layer 20 facing the first N-type electrode extension 34, and the second P-type electrode 240 is The edge portion of the N-type semiconductor layer 20 facing the second N-type electrode extension 36 is disposed. The first P-type electrode 140 may have a width and a length less than or equal to the length of the first N-type electrode extension 34, and the second P-type electrode 240 may have the second N-type. It may have a width and a length shorter than or equal to the length of the electrode extension 36. Meanwhile, grooves may be formed in the planar shape of the first and second P-type electrodes 140 and 240 so as to be rounded at portions facing the first and second N-type electrode extensions 34 and 36, respectively. have. As described above, the first and second P-type electrodes 140 and 240 have a planar shape that is substantially symmetrical with respect to the center of the N-type semiconductor layer 20.

The distance between the N-type electrode pad part 32 and the first light emitting part 100 and the distance between the N-type electrode pad part 32 and the second light emitting part 200 are substantially the same, and the first N The distance between the mold electrode extension 34 and the first light emitting part 100 and the distance between the second N-type electrode extension 34 and the second light emitting part 200 are also substantially the same. In this case, a distance between the first N-type electrode extension part 34 and the first light emitting part 100 may be shorter than a distance between the N-type electrode pad part 32 and the first light emitting part 100. The distance between the second N-type electrode extension part 36 and the second light emitting part 200 may be shorter than the distance between the N-type electrode pad part 32 and the second light emitting part 200.

Meanwhile, at least one first current flow obstruction groove 132 is formed in the first transparent electrode layer 130, and at least one second current flow obstruction groove 242 is formed in the second transparent electrode layer 230. Is formed. In some cases, the first and second current flow obstruction grooves 142 and 242 may be omitted.

The first current flow obstruction groove 132 may be formed continuously or discontinuously along a point where the distance between the first P-type electrode 140 and the N-type electrode 30 is the shortest. The second current flow obstruction groove 232 may be formed continuously or discontinuously along the point where the distance between the second P-type electrode 240 and the N-type electrode 30 is the shortest. Specifically, the first current flow obstruction groove 132 is formed to be parallel to the first N-type electrode extension 34, for example, to be adjacent to the first N-type electrode extension 34. The second current flow obstruction groove 232 may be formed in parallel with the second N-type electrode extension 36, and disposed to be adjacent to the second N-type electrode extension 36, for example. Can be. As such, the first and second current flow obstruction grooves 132 and 232 have a planar shape that is substantially symmetrical with respect to the center of the N-type semiconductor layer 20.

<Example 7 of Light-Emitting Element>

8 is a plan view illustrating a light emitting device according to a seventh embodiment of the present invention.

In the light emitting device according to the present exemplary embodiment, except for the planar arrangement or the planar shape of the first light emitting part 100, the second light emitting part 200, and the N-type electrode 30, the first light emitting device described with reference to FIGS. 1 and 2 will be described. Since they are substantially the same as the light emitting device according to the embodiment, detailed descriptions of the same contents as those of the first embodiment will be omitted, and the same reference numerals will be given to the same components as those of the first embodiment.

Referring to FIG. 8, the N-type electrode 30 has a planar shape extending from the center of the N-type semiconductor layer 20 to both sides of the first direction D1. That is, the N-type electrode 30 has a planar shape that is substantially symmetric with respect to the center of the N-type semiconductor layer 20.

The first light emitting part 100 includes a first active layer 110, a first P-type semiconductor layer 120, a first transparent electrode layer 130, and a first P-type electrode 140, and the second light emission. The unit 200 includes a second active layer 210, a second P-type semiconductor layer 220, a second transparent electrode layer 230, and a second P-type electrode 240.

The first and second light emitting parts 100 and 200 may be disposed at both sides of the N-type electrode 30 in the first direction D1. In this case, the first and second light emitting parts 100 and 200 have a planar shape that is substantially symmetric with respect to the center of the N-type semiconductor layer 20. That is, the first active layer 110 is symmetrical with the second active layer 210, and the first P-type semiconductor layer 120 is symmetrical with the second P-type semiconductor layer 220. The first transparent electrode layer 130 is symmetrical with the second transparent electrode layer 230, and the first P-type electrode 140 is symmetrical with the second P-type electrode 240. Hereinafter, the first and second P-type electrodes 140 and 240 and the first and second transparent electrode layers 130 and 230 will be described in detail.

The first P-type electrode 140 includes a first P-type electrode pad 142 and a first P-type electrode extension 144, and the second P-type electrode 240 is a second P-type electrode. The pad part 242 and the second P-type electrode extension part 244 are included.

The first P-type electrode pad part 142 has a planar shape extending from the one side edge of the N-type semiconductor layer 20 along the second direction D2 and the second P-type electrode pad part 242. ) Has a planar shape extending along the second direction D2 from the other edge of the N-type semiconductor layer 20. In this case, the other edge of the N-type semiconductor layer 20 is disposed on the opposite side of one edge of the N-type semiconductor layer 20.

The first P-type electrode extension part 144 is connected to the first P-type electrode pad part 142 and extends along the first direction D1 from one edge of the N-type semiconductor layer 20. The second P-type electrode extension part 244 is connected to the second P-type electrode pad part 242 and extends along the first direction D1 from the other edge of the N-type semiconductor layer 20. As such, the first and second P-type electrodes 140 and 240 have a planar shape that is substantially symmetrical with respect to the center of the N-type semiconductor layer 20, for example, an L-shaped plane. It may have a shape.

The first P-type electrode pad part 142 has the same length and width as the second P-type electrode pad part 242, and the first P-type electrode extension part 144 is the second P-type. It has substantially the same length and width as electrode extension 244. The width of the first P-type electrode pad part 142 is wider than the width of the first P-type electrode extension part 144, and the width of the second P-type electrode pad part 242 is the second P-type electrode. It is wider than the width of the extension 244. Meanwhile, as shown in FIG. 8, the first P-type electrode extension part 144 may extend to one end of the N-type electrode 30 in the first direction D1, and the second P-type electrode The extension part 244 may extend to the other end of the N-type electrode 30 in the first direction D1.

Meanwhile, at least one first current flow obstruction groove 132 is formed in the first transparent electrode layer 130, and at least one second current flow obstruction groove 242 is formed in the second transparent electrode layer 230. Is formed. However, in some cases, the first and second current flow disturbance grooves 142 and 242 may be omitted.

The first current flow obstruction groove 132 may be formed continuously or discontinuously along a point where the distance between the first P-type electrode 140 and the N-type electrode 30 is the shortest. The two current flow obstruction grooves 232 may be formed continuously or discontinuously along the point where the distance between the second P-type electrode 240 and the N-type electrode 30 is the shortest. Specifically, the first current flow obstruction groove 132 is disposed in the first direction D1 between one end of the first P-type electrode extension part 144 and one end of the N-type electrode 30 facing each other. The second current flow blocking groove 232 may be formed in the first direction D1 between one end of the second P-type electrode extension 244 facing each other and the other end of the N-type electrode 30. It can be formed into). In this case, the first and second current flow obstruction grooves 132 and 232 have a planar shape that is substantially symmetrical with respect to the center of the N-type semiconductor layer 20.

<Example 8 of Light-Emitting Element>

9 is a plan view illustrating a light emitting device according to an eighth embodiment of the present invention.

In the light emitting device according to the present exemplary embodiment, except for the planar arrangement or the planar shape of the first light emitting part 100, the second light emitting part 200, and the N-type electrode 30, the first light emitting device described with reference to FIGS. 1 and 2 will be described. Since they are substantially the same as the light emitting device according to the embodiment, detailed descriptions of the same contents as those of the first embodiment will be omitted, and the same reference numerals will be given to the same components as those of the first embodiment.

Referring to FIG. 9, the N-type electrode 30 may include an N-type electrode pad part 32, a first N-type electrode extension part 34, and a second N-type electrode extension part 36.

The N-type electrode pad part 32 has a planar shape extending along a vertical center line of the N-type semiconductor layer 20. The first N-type electrode extension part 34 is disposed in the first direction D1 from one end of the N-type electrode pad part 32 in the second direction D2 toward the first light emitting part 100. Extends along. The second N-type electrode extension part 36 is in the first direction D1 toward the second light emitting part 200 from the other end of the N-type electrode pad part 32 in the second direction D2. Extends along. As such, the N-type electrode 30 has a planar shape that is substantially symmetrical with respect to the center of the N-type semiconductor layer 20.

The first N-type electrode extension part 34 has a length and a width substantially the same as that of the second N-type electrode extension part 36. The width of the N-type electrode pad part 32 may be equal to or greater than the width of the first N-type electrode extension part 34 or the first N-type electrode extension part 36. The first and second N-type electrode extensions 34 and 36 may have the same width and extend as shown in FIG. 9. However, unlike FIG. 9, the first and second N-type electrode extension parts 34 and 36 extend from the N-type electrode pad part 32. It may have a structure of increasing width.

Meanwhile, the length of the N-type electrode pad part 32 may be relatively short, and the first and second N-type electrode extension parts 34 and 36 may be formed relatively long. As a result, the first and second N-type electrode extensions 34 and 36 may have a center line passing through the center of the N-type semiconductor layer 20 along the first direction D1 (hereinafter, referred to as an 'N-type semiconductor layer'). And horizontally adjacent to the horizontal center line 20 of FIG. 20.

The first light emitting part 100 includes a first active layer 110, a first P-type semiconductor layer 120, a first transparent electrode layer 130, and a first P-type electrode 140, and the second light emission. The unit 200 includes a second active layer 210, a second P-type semiconductor layer 220, a second transparent electrode layer 230, and a second P-type electrode 240.

The first and second light emitting parts 100 and 200 may be disposed at both sides of the N-type electrode 30 in the first direction D1. In this case, the first and second light emitting parts 100 and 200 have a planar shape that is substantially symmetric with respect to the center of the N-type semiconductor layer 20. That is, the first active layer 110 is symmetrical with the second active layer 210, and the first P-type semiconductor layer 120 is symmetrical with the second P-type semiconductor layer 220. The first transparent electrode layer 130 is symmetrical with the second transparent electrode layer 230, and the first P-type electrode 140 is symmetrical with the second P-type electrode 240. Hereinafter, the first and second P-type electrodes 140 and 240 and the first and second transparent electrode layers 130 and 230 will be described in detail.

The first P-type electrode 140 extends along the second direction D2 from one side edge of the N-type semiconductor layer 20 opposite to the first N-type electrode extension 34. The 2 P-type electrode 240 extends along the second direction D2 from the other edge of the N-type semiconductor layer 20 opposite to the second N-type electrode extension 36. In this case, the other edge of the N-type semiconductor layer 20 is disposed on the opposite side of one edge of the N-type semiconductor layer 20. As a result, the first and second P-type electrodes 140 and 240 have a planar shape that is substantially symmetrical with respect to the center of the N-type semiconductor layer 20.

The first P-type electrode 140 may extend to the first N-type electrode extension part 34 in the second direction D2 or to a horizontal center line of the N-type semiconductor layer 20. The second P-type electrode 240 may extend to the second N-type electrode extension part 36 in the second direction D2 or to a horizontal center line of the N-type semiconductor layer 20. Alternatively, the first P-type electrode 140 may extend beyond the first N-type electrode extension 34, and the second P-type electrode 240 may extend the second N-type electrode. It may extend beyond section 36.

Meanwhile, at least one first current flow obstruction groove 132 is formed in the first transparent electrode layer 130, and at least one second current flow obstruction groove 242 is formed in the second transparent electrode layer 230. Is formed. However, in some cases, the first and second current flow disturbance grooves 142 and 242 may be omitted.

The first current flow obstruction groove 132 may be formed continuously or discontinuously along a point where the distance between the first P-type electrode 140 and the N-type electrode 30 is the shortest. The second current flow obstruction groove 232 may be formed continuously or discontinuously along the point where the distance between the second P-type electrode 240 and the N-type electrode 30 is the shortest.

Specifically, the first current flow obstruction groove 132 is formed between one end of the first P-type electrode 140 and one end of the first N-type electrode extension 34 facing each other, the second The current flow obstruction groove 232 may be formed between one end of the second P-type electrode 240 facing each other and one end of the second N-type electrode extension 36. For example, the first and second current flow disturbance grooves 132 and 232 may be formed to surround one end of each of the first and second N-type electrode extensions 34 and 36 as shown in FIG. 9, or Unlike FIG. 9, the first and second P-type electrodes 140 and 240 may be formed to surround one end of each. As a result, the first and second current flow disturbance grooves 132 and 232 are substantially planarly symmetrical with respect to the center of the N-type semiconductor layer 20, for example, L-shaped planes. It may have a shape.

<Example 9 of Light-Emitting Element>

10 is a plan view illustrating a light emitting device according to a ninth embodiment of the present invention.

In the light emitting device according to the present exemplary embodiment, except for the planar arrangement or the planar shape of the first light emitting part 100, the second light emitting part 200, and the N-type electrode 30, the first light emitting device described with reference to FIGS. 1 and 2 will be described. Since they are substantially the same as the light emitting device according to the embodiment, detailed descriptions of the same contents as those of the first embodiment will be omitted, and the same reference numerals will be given to the same components as those of the first embodiment.

Referring to FIG. 10, the N-type electrode 30 includes an N-type electrode pad part 32, a first N-type electrode extension part 34, and a second N-type electrode extension part 36.

The N-type electrode pad part 32 has a planar shape extending along a vertical center line of the N-type semiconductor layer 20. The first N-type electrode extension part 34 is disposed from the one end of the N-type electrode pad part 32 in the second direction D2 toward the first light emitting part 100 in the first direction D1. Extends along. The second N-type electrode extension part 36 is in the first direction D1 toward the second light emitting part 200 from the other end of the N-type electrode pad part 32 in the second direction D2. Extends along. As a result, the N-type electrode 30 has a planar shape that is substantially symmetric with respect to the center of the N-type semiconductor layer 20.

The first N-type electrode extension part 34 has a length and a width substantially the same as that of the second N-type electrode extension part 36. The width of the N-type electrode pad part 32 may be wider than the width of the first N-type electrode extension part 34 or the first N-type electrode extension part 36. Meanwhile, the first and second N-type electrode extensions 34 and 36 may have the same width and extend as shown in FIG. 10, but unlike the FIG. It may have a structure that increases in width.

The first and second light emitting parts 100 and 200 may be disposed at both sides of the N-type electrode 30 in the first direction D1. In this case, the first and second light emitting parts 100 and 200 have a planar shape that is substantially symmetric with respect to the center of the N-type semiconductor layer 20. That is, the first active layer 110 is symmetrical with the second active layer 210, and the first P-type semiconductor layer 120 is symmetrical with the second P-type semiconductor layer 220. The first transparent electrode layer 130 is symmetrical with the second transparent electrode layer 230, and the first P-type electrode 140 is symmetrical with the second P-type electrode 240. Hereinafter, the first and second P-type electrodes 140 and 240 and the first and second transparent electrode layers 130 and 230 will be described in detail.

The first P-type electrode 140 includes a first P-type electrode pad 142 and a first P-type electrode extension 144, and the second P-type electrode 240 is a second P-type electrode. The pad part 242 and the second P-type electrode extension part 244 are included.

The first P-type electrode pad part 142 is a plane extending along the second direction D2 from one edge of the N-type semiconductor layer 20 opposite to the first N-type electrode extension part 34. The second P-type electrode pad part 242 has a shape, and the second P-type electrode pad part 242 faces the second direction D2 from an edge of the other side of the N-type semiconductor layer 20 opposite to the second N-type electrode extension part 36. It has an extended planar shape. In this case, the other edge of the N-type semiconductor layer 20 is disposed on the opposite side of one edge of the N-type semiconductor layer 20.

The first P-type electrode extension part 144 is connected to the first P-type electrode pad part 142 and extends along the first direction D1 from one edge of the N-type semiconductor layer 20. The second P-type electrode extension part 244 is connected to the second P-type electrode pad part 242 and extends along the first direction D1 from the other edge of the N-type semiconductor layer 20. As such, the first and second P-type electrodes 140 and 240 have a planar shape that is substantially symmetrical with respect to the center of the N-type semiconductor layer 20, for example, an L-shaped plane. It may have a shape.

The first P-type electrode pad part 142 has the same length and width as the second P-type electrode pad part 242, and the first P-type electrode extension part 144 is the second P-type. It has substantially the same length and width as electrode extension 244. The width of the first P-type electrode pad part 142 may be wider than the width of the first P-type electrode extension part 144, and the width of the second P-type electrode pad part 242 may be greater than the width of the second P-type electrode pad part 242. It may be wider than the width of the mold electrode extension 244.

In the present embodiment, as shown in FIG. 8, the first P-type electrode pad part 142 extends from one edge of the N-type semiconductor layer 20 to the opposite edge or to the first N-type electrode extension part 34. The second P-type electrode pad part 242 may extend from the other edge of the N-type semiconductor layer 20 to the opposite edge or to the second N-type electrode extension 36. In addition, in the present embodiment, as shown in FIG. 8, the first P-type electrode extension part 144 extends to the first N-type electrode extension part 34 so as not to overlap with the first N-type electrode extension part 34. The second P-type electrode extension 244 may extend up to the second N-type electrode extension 36 so as not to overlap the second N-type electrode extension 36.

Meanwhile, at least one first current flow obstruction groove 132 is formed in the first transparent electrode layer 130, and at least one second current flow obstruction groove 242 is formed in the second transparent electrode layer 230. Is formed. However, in some cases, the first and second current flow disturbance grooves 142 and 242 may be omitted.

The first current flow obstruction groove 132 may be formed continuously or discontinuously along a point where the distance between the first P-type electrode 140 and the N-type electrode 30 is the shortest. The second current flow obstruction groove 232 may be formed continuously or discontinuously along the point where the distance between the second P-type electrode 240 and the N-type electrode 30 is the shortest. Specifically, the first current flow obstruction groove 132 may be formed between one end of the first P-type electrode extension 144 facing each other and one end of the first N-type electrode extension 34. The second current flow blocking groove 232 may be formed between one end of the second P-type electrode extension 244 facing each other and one end of the second N-type electrode extension 36. In this case, the first and second current flow obstruction grooves 132 and 232 may have a planar shape that is substantially symmetrical with respect to the center of the N-type semiconductor layer 20.

As described above, according to the exemplary embodiments of the present invention, the N-type electrode 30 is disposed between the first and second light emitting parts 100 and 200 so that each of the first and second light emitting parts 100 and 200 is formed. As the charge, that is, the electrons are provided at each angle, wire bonding may be performed on one of the N-type electrodes 30 instead of performing wire bonding on two separate electrodes. Therefore, the process of wire bonding can be shortened and space use can be efficiently used when mounting a light emitting diode chip on the said board | substrate 10. FIG.

In addition, since the first and second P-type electrodes 140 and 240 are formed by dividing the P-type electrode having a resistance higher than that of the N-type electrode 30 into two, the heat of the light emitting device is reduced. It can release effectively.

In addition, the first N-type electrode extension part 34 and the first P-type electrode extension part 144 may have a planar shape corresponding to each other, and the second N-type electrode extension part 36 and the second P may correspond to each other. As the mold electrode extension part 244 has a planar shape corresponding to each other, uniform current spreading may be formed in each of the first and second light emitting parts 100 and 200.

In addition, the first and second light emitting parts 100 and 200 have a planar shape that is symmetrical to each other based on the center of the N-type semiconductor layer 20 or the vertical center line of the N-type semiconductor layer 20. Therefore, the phenomenon in which current is concentrated by any one of the LED chips can be reduced as in the related art.

In the detailed description of the present invention described above with reference to the preferred embodiments of the present invention, those skilled in the art or those skilled in the art having ordinary skill in the art will be described in the claims to be described later It will be understood that various modifications and variations can be made in the present invention without departing from the scope of the present invention.

1 is a plan view showing a light emitting device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along line II ′ of FIG. 1.

3 is a plan view illustrating a light emitting device according to a second exemplary embodiment of the present invention.

4 is a plan view illustrating a light emitting device according to a third exemplary embodiment of the present invention.

5 is a plan view illustrating a light emitting device according to a fourth exemplary embodiment of the present invention.

6 is a plan view illustrating a light emitting device according to a fifth embodiment of the present invention.

7 is a plan view illustrating a light emitting device according to a sixth embodiment of the present invention.

8 is a plan view illustrating a light emitting device according to a seventh embodiment of the present invention.

9 is a plan view illustrating a light emitting device according to an eighth embodiment of the present invention.

10 is a plan view illustrating a light emitting device according to a ninth embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

10: substrate 20: N-type semiconductor layer

100: first light emitting unit 110: first active layer

120: first P-type semiconductor layer 130: first transparent electrode layer

132: first current flow obstruction groove 140: first P-type electrode

142: first P-type electrode pad portion 144: first P-type electrode extension portion

200: second light emitting part 210: second active layer

220: second P-type semiconductor layer 230: second transparent electrode layer

232: second current flow obstruction groove 240: second P-type electrode

242: first P-type electrode pad part 244: second P-type electrode extension part

30: N-type electrode 32: N-type electrode pad portion

34: first N-type electrode extension 36: second N-type electrode extension

40: negative voltage applying line 50: first positive voltage applying line

60: second positive voltage applying line

Claims (15)

An N-type semiconductor layer formed on the substrate; A first active layer formed on the first region of the N-type semiconductor layer, a first P-type semiconductor layer formed on the first active layer, and a first P-type electrode formed on the first P-type semiconductor layer 1 light emitting unit; A second active layer formed on the second region of the N-type semiconductor layer, a second P-type semiconductor layer formed on the second active layer, and a second P-type electrode formed on the second P-type semiconductor layer 2 light emitting unit; And And an N-type electrode formed on a third region of the N-type semiconductor layer spaced apart from each other. The semiconductor device of claim 1, wherein the N-type semiconductor layer has a substantially rectangular planar shape in which a length in a first direction is longer than a length in a second direction perpendicular to the first direction. And the first and second light emitting parts are spaced apart from each other on both sides of the N-type electrode in the first direction. The method of claim 2, wherein the first and second light emitting portion And a planar shape that is symmetrical with respect to the center line passing through the center of the N-type semiconductor layer along the center of the N-type semiconductor layer or the second direction. The method of claim 2, wherein the N-type electrode An N-type electrode pad portion to which a negative voltage applying line for applying a negative voltage is wire bonded; A first N-type electrode extension part extending from the N-type electrode pad part toward the first light emitting part; And And a second N-type electrode extension part extending from the N-type electrode pad part to the second light emitting part side. The method of claim 4, wherein the first and second N-type electrode extensions are And a planar shape that is symmetrical with respect to the center line passing through the center of the N-type semiconductor layer along the center of the N-type semiconductor layer or the second direction. The method of claim 4, wherein the distance from the first N-type electrode extending portion to the first light emitting portion is shorter than the distance from the N-type electrode pad portion to the first light emitting portion, The distance from the second N-type electrode extending portion to the second light emitting portion is shorter than the distance from the N-type electrode pad portion to the second light emitting portion. The light emitting device of claim 6, wherein the distance from the first N-type electrode extension to the first light emitting portion is substantially the same as the distance from the second N-type electrode extension to the second light emitting portion. . The method of claim 4, wherein the first and second N-type electrode extensions are The light emitting device having a structure in which the sheet resistance with the N-type semiconductor layer becomes smaller as the distance from the N-type electrode pad portion. The method of claim 8, wherein the first and second N-type electrode extensions The light emitting device of claim 1, wherein the light emitting device has a planar shape in which a width thereof is wider as it moves away from the N-type electrode pad part. The N-type electrode of claim 4, wherein the first P-type electrode comprises: a first P-type electrode pad portion wire-bonded with a first positive voltage applying line for applying a positive voltage, and the N from the first P-type electrode pad portion; A first P-type electrode extension extending to the mold electrode side; The second P-type electrode extends from the second P-type electrode pad part to which the second positive voltage applying line for applying the positive voltage is wire-bonded, and from the second P-type electrode pad part to the N-type electrode side. It includes a second P-type electrode extension, The first P-type electrode extension part has a planar shape corresponding to the first N-type electrode extension part, And the second P-type electrode extension part has a planar shape corresponding to the second N-type electrode extension part. The method of claim 10, wherein the first P-type electrode extension has a length substantially the same as the first N-type electrode extension, And the second P-type electrode extension part has substantially the same length as the second N-type electrode extension part. The method of claim 1, wherein the first light emitting unit further comprises a first transparent electrode layer formed between the first P-type semiconductor layer and the first P-type electrode, The second light emitting part further comprises a second transparent electrode layer formed between the second P-type semiconductor layer and the second P-type electrode. The method of claim 12, wherein the first P-type electrode is disposed on the opposite side of the N-type electrode of the edge of the first transparent electrode layer, And the second P-type electrode is disposed on an opposite side of the N-type electrode among edges of the second transparent electrode layer. The method of claim 13, wherein the first transparent electrode layer is formed with at least one first current flow obstruction groove for equalizing the flow of current between the N-type electrode and the first P-type electrode, And at least one second current flow obstruction groove is formed in the second transparent electrode layer to equalize the flow of current between the N-type electrode and the second P-type electrode. 15. The method of claim 14, wherein the first current flow obstruction groove is formed along the point where the distance between the first P-type electrode and the N-type electrode is the shortest, The second current flow obstruction groove is formed along a point where the distance between the second P-type electrode and the N-type electrode is the shortest.

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