KR20110060607A - Buffer circuit - Google Patents
Buffer circuit Download PDFInfo
- Publication number
- KR20110060607A KR20110060607A KR1020090117232A KR20090117232A KR20110060607A KR 20110060607 A KR20110060607 A KR 20110060607A KR 1020090117232 A KR1020090117232 A KR 1020090117232A KR 20090117232 A KR20090117232 A KR 20090117232A KR 20110060607 A KR20110060607 A KR 20110060607A
- Authority
- KR
- South Korea
- Prior art keywords
- signal
- differential
- amplifier
- buffer circuit
- difference
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
- H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L25/00—Baseband systems
- H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
- H04L25/0264—Arrangements for coupling to transmission lines
- H04L25/028—Arrangements specific to the transmitter end
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Logic Circuits (AREA)
Abstract
Description
The present invention relates to a semiconductor circuit, and more particularly to a buffer circuit.
Buffer circuits are used in various fields in semiconductor circuits, and are typically used as circuit configurations for data input.
The signal transmission method between the semiconductor circuit and the external device may be classified into a single ended type and a differential type.
In the single-ended type, an independent signal is input for each input terminal, that is, a pad, and in the differential type, a differential signal having opposite phases is input through two pads.
The buffer circuit is configured to fit each of the single ended type and the differential type.
As shown in FIG. 1, a
At this time, independent signals are input for each pad DQ0, DQ1, ....
The
The
The
The
The
As shown in FIG. 2, the
At this time, differential signals having opposite phases are inputted through the two pads DQ0 + and DQ0-.
The
The
The
The
As described above, the buffer circuit according to the prior art should configure the buffer circuit in different forms according to the signal transmission method.
Therefore, the differential type signal cannot be transmitted using the buffer circuit configured for the single ended type, and the single ended type signal cannot be transmitted using the buffer circuit configured for the differential type.
An embodiment of the present invention amplifies the difference between the single signal input through the first pad and the reference voltage in response to the selection signal, or amplifies the difference between the differential signal input through the first pad and the second pad. A first amplifier configured to generate a differential amplified signal, and a second amplifier configured to amplify a difference between the single signal input through the second pad and the reference voltage in response to the selection signal to generate a second differential amplified signal And a switching unit configured to provide a differential signal input through the second pad to the first amplifier in response to the inverted selection signal.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
As shown in FIG. 3, the
The
In this case, the pair of pads DQ0 / DQ0 + and DQ1 / DQ0- receive signals independent of each other, that is, a single ended signal in the case of a single-ended type, and a differential signal in the case of a differential type. ) Input.
The embodiment of the present invention is an example designed to fit the case where the select signal SEL is high level in the single-ended method and low level in the differential method. In addition, a mode register set (MRS) signal or a test signal may be used as the selection signal SEL.
The
The
The
The
The
The
The transistor T1 has a drain connected to the drain of the transistor M12, a source connected to the drain of the transistor M23, and an inverted selection signal SELB is input to the gate.
The transistor T2 has a source connected to the source of the transistor M16, a drain connected to the source of the transistor M23, and an inverted selection signal SELB is input to the gate.
The
The
The
The
The operation of the
First, when the signal transmission method is a single-ended method, the operation of the
As described above, in the single-ended mode, the selection signal SEL is at a high level, and the inverted selection signal SELL is provided at a low level. It is also assumed that the enable signal EN is activated to a high level.
Since the selection signal SEL is at a high level, the transistors M12, M16, M21, M22, M25, and M26 are turned on. On the other hand, since the inverted select signal SELB is at the low level, the transistors T1 and T2 constituting the circuit configuration, that is, the
Accordingly, the
The
The
The
As a result, the
Next, when the signal transmission method is the differential method, the operation of the
In the differential method, the select signal SEL is at a low level, and the inverted select signal SELB is provided at a high level. It is also assumed that the enable signal EN is activated to a high level.
Since the select signal SEL is at a low level, the transistors M12, M16, M21, M22, M25, and M26 are turned off. Meanwhile, since the inverted select signal SELB is at a high level, the transistors T1 and T2 of the
Therefore, the
On the other hand, the circuit configuration shown by the dotted line in Figure 5, that is, the
Accordingly, the
The
As a result, the data input operation for the differential signals D0 + and D0- input through the pads DQ0 / DQ0 + and the pads D1 / DQ0- is performed by the
As described above, the
As such, those skilled in the art will appreciate that the present invention can be implemented in other specific forms without changing the technical spirit or essential features thereof. Therefore, the above-described embodiments are to be understood as illustrative in all respects and not as restrictive. The scope of the present invention is shown by the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.
1 is a circuit diagram of a single-ended type buffer circuit according to the prior art;
2 is a circuit diagram of a differential type buffer circuit according to the prior art;
3 is a circuit diagram of a buffer circuit according to an embodiment of the present invention;
4 and 5 are circuit diagrams for describing an operation of a buffer circuit according to an exemplary embodiment of the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090117232A KR20110060607A (en) | 2009-11-30 | 2009-11-30 | Buffer circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090117232A KR20110060607A (en) | 2009-11-30 | 2009-11-30 | Buffer circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20110060607A true KR20110060607A (en) | 2011-06-08 |
Family
ID=44395345
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020090117232A KR20110060607A (en) | 2009-11-30 | 2009-11-30 | Buffer circuit |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20110060607A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9742355B2 (en) | 2014-12-05 | 2017-08-22 | Samsung Electronics Co., Ltd. | Buffer circuit robust to variation of reference voltage signal |
-
2009
- 2009-11-30 KR KR1020090117232A patent/KR20110060607A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9742355B2 (en) | 2014-12-05 | 2017-08-22 | Samsung Electronics Co., Ltd. | Buffer circuit robust to variation of reference voltage signal |
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