KR20110044402A - Substrate processing equipment and method - Google Patents

Abstract

PURPOSE: A substrate processing device and method are provided to include an injector which supplies an etching gas to the upper and lower areas of a chamber reaction space, thereby effectively eliminating coating films formed on the upper and lower areas of a chamber during dry cleaning. CONSTITUTION: A chamber(100) comprises a reaction space. A substrate mounting unit(200) mounts a substrate(10) in a chamber. A lower heating unit(400) heats the reaction space. A deposition gas injector(500) and a first etching gas injector spray a deposition gas and an etching gas to an upper part of the reaction space. A second etching gas injector sprays an etching gas to a lower part of the reaction space.

Description

Substrate Processing Apparatus and Method {SUBSTRATE PROCESSING EQUIPMENT AND METHOD}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and method, comprising an injector through which an etching gas is supplied to a lower region as well as an upper region of a chamber, and capable of removing a coating film deposited on a lower region of a chamber by dry cleaning. It is about.

Generally, substrate processing apparatuses refer to devices for depositing a film on a semiconductor substrate or etching a film deposited on a semiconductor substrate. A film is formed and etched through such a substrate processing apparatus to produce a semiconductor device, a flat panel display panel, an optical device, a solar cell, and the like.

In particular, in the substrate processing apparatus used in the selective epi growth (SEG) process, an injector for supplying a deposition gas and an etching gas is provided in an upper region of the chamber, respectively. Therefore, the process of injecting the increase gas for a predetermined time and then injecting the etching gas for a predetermined time is carried out alternately to selectively select Si (or SiGe, SiC, SiGeC, Soping epi) in the Si region on the substrate where Si and the insulating film are mixed. layer is used to grow.

As the process progresses, a dry cleaning is removed at a predetermined time to remove the coating film coated with the deposition gas inside the chamber. In this case, the injector for supplying the deposition gas and the etching gas is provided only in an upper direction of the part where the substrate is seated. There is no problem in removing the coating film deposited in the upper region inside the chamber, but there was a limit in removing the coating film coated in the lower region inside the chamber.

On the other hand, the substrate processing apparatus used in the SEG process is formed of a light-transmitting material of the upper and lower portions of the chamber, and the heating means for heating the inside of the chamber is provided on the upper and lower outer sides of the chamber, as described above the lower region inside the chamber If the coating film is not properly removed in the process of heating the inside of the chamber at the bottom of the chamber by the heating means is not made uniformly there is a problem that the temperature uniformity inside the chamber or particles are generated.

The present invention has been made to solve the above problems, and provided with an injector for supplying the etching gas to the lower region as well as the upper region of the chamber reaction space, the coating film formed in the lower region as well as the upper region inside the chamber during dry cleaning It also provides a substrate processing apparatus and method that can be effectively removed.

A substrate processing apparatus according to an embodiment of the present invention includes a chamber having a reaction space; Substrate placing means for positioning and rotating the substrate in the reaction space; Lower heating means positioned under the chamber to heat the reaction space; A deposition gas injector and a first etching gas injector for respectively injecting a deposition gas and an etching gas into an upper region of the reaction space of the chamber based on the substrate; At least one second etching gas injector for injecting an etching gas to the lower region of the reaction space of the chamber based on the substrate.

The chamber is provided with a pumping port on one side, the deposition gas injector, the first etching gas injector and the second etching gas injector is provided on the other side of the chamber to face each other with the pumping port and the substrate therebetween. It is done.

The substrate placing means includes a susceptor on which the substrate is seated, the deposition gas injector and the first etching gas injector are disposed above the susceptor through the chamber sidewall surface, and the second etching gas injector is disposed on the substrate. Characterized in that the lower portion of the susceptor through the chamber side wall surface.

The deposition gas injector may have a spray nozzle formed in a lower direction, and the first etching gas injector and the second etching gas injector may have a spray nozzle formed in at least one of at least one of a forward direction, an upper direction, and a lower direction. .

The chamber has a chamber body, an upper dome covering an upper region of the chamber body, and a lower dome covering a lower region of the chamber body, the lower dome having at least a portion adjacent to the heating means made of a light transmissive material. It is characterized by being formed.

In this case, the light transmissive material is characterized in that the quartz.

And, the substrate processing method according to an embodiment of the present invention comprises the steps of mounting a substrate in the chamber; Supplying a deposition gas to an upper region of the chamber to form a deposition film on the substrate; Supplying an etching gas to the upper region and the lower region of the chamber, respectively, to etch the deposited film deposited on the substrate and the coating film unnecessarily deposited on the inner walls of the upper region and the lower region of the chamber.

Forming the deposition film and etching the deposition film and the coating film is characterized in that it is repeated in turn.

Etching the deposition film and the coating film, followed by drawing the substrate out of the chamber; And supplying an etching gas to the upper region and the lower region of the chamber, respectively, to remove the coating film coated on inner walls of the upper region and the lower region of the chamber.

In the forming of the deposition film and etching the deposition film and the coating film, a pumping process for exhausting the deposition gas and the etching gas supplied to the chamber to the outside of the chamber may be performed continuously or intermittently.

According to an embodiment of the present invention, the lower region of the chamber is provided with an injector for injecting etching gas, thereby preventing the deposition film from being formed in the lower region of the chamber during the process, and effectively removing the coating film formed in the lower region of the chamber during dry cleaning. It can work.

In addition, by removing the coating film formed in the lower region of the chamber, it is possible to maintain a uniform temperature inside the chamber when heating the inside of the chamber through the lower dome of the chamber, it is possible to prevent the occurrence of unnecessary particles.

In addition, since the coating film formed on the lower region of the chamber can be effectively removed, the repair and replacement cycles of the device can be increased, thereby improving productivity.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention in more detail. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention, and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you. Like numbers refer to like elements in the figures.

1 is a vertical cross-sectional conceptual view of a substrate processing apparatus according to an embodiment of the present invention, FIG. 2A is a horizontal cross-sectional conceptual view taken along line AA ′ of FIG. 1, and FIG. 2B is a cross-sectional conceptual view taken along line B-B ′ of FIG. 1. A horizontal cross-sectional conceptual diagram.

As shown in the figure, the substrate processing apparatus of this embodiment includes a chamber 100 having a reaction space 101; A substrate placing means (200) positioned in the reaction space (101) for placing and rotating the substrate (10); A lower heating means (400) positioned under the chamber (100) to heat the reaction space (101); A deposition gas injector 500 and a first etching gas injector 610 that inject a deposition gas and an etching gas into the upper region 101a based on the substrate 10 in the reaction space 101 of the chamber 100, respectively. Wow; At least one second etching gas injector 620 for injecting an etching gas into the lower region 101b based on the substrate 10 of the reaction space 101 of the chamber 100 is included.

In addition, the heating apparatus 300 may further include an upper heating means 300 positioned above the chamber 100 to heat the reaction space 101. Although not shown, a plasma generating apparatus for generating a plasma may be provided in the reaction space 101.

The chamber 100 includes a chamber body 110 forming a reaction space 101, an upper dome 120, and a lower dome 130.

The chamber body 110 is manufactured in a cylindrical shape with upper and lower portions opened. That is, it is manufactured in the form of a circular band. Of course, the present invention is not limited thereto and may be manufactured in a polygonal cylindrical shape. Part or all of the chamber body 110 is preferably made of a metallic material. In this embodiment, the chamber body 110 is manufactured using a material such as aluminum or stainless steel. At this time, the chamber body 110 serves as a side wall surface of the reaction space 101 of the chamber 100. Although not shown, a part of the chamber body 110 may be formed with a substrate entrance through which the substrate enters and a final connection portion of the gas supply device for supplying the reaction gas into the reaction space.

The upper dome 120 becomes the upper cover of the chamber body 110 (ie, the upper wall of the chamber 100). The upper dome 120 has a lower region of the dome, that is, an edge region of the dome, is attached to the upper surface of the chamber body 110 to seal the upper region 101a of the reaction space 101. At this time, the upper dome 120 is effectively attached to the chamber body 110 detachably.

The upper dome 120 is made of a material having excellent thermal conductivity so that the heat of the upper heating means 300 can be effectively transferred to the reaction space. That is, the upper dome 120 may be made of a translucent plate (for example, quartz) capable of transferring radiant heat well to the reaction space. Through this, radiant heat conducted in the reaction space of the chamber 100 toward the upper dome 120 passes through the upper dome 120. In addition, the transmitted radiant heat may be reflected by the upper heating means 300 to pass through the upper dome 120 to be conducted to the reaction space of the chamber 100. Of course, the present invention is not limited thereto, and the upper dome 120 may be manufactured of a ceramic material.

The lower dome 130 becomes a lower cover of the chamber body 110 (ie, the bottom surface of the chamber 100). The lower dome 130 is attached to the lower surface of the chamber body 110 to seal the lower region 101b of the reaction space 101.

The lower dome 130 is made of a light transmissive plate. Through this, the lower dome 130 is effective to transmit the radiant heat of the first heating means 421 and the second heating means 423 located outside the chamber 100 to the reaction space 101 inside the chamber 100. to be. In this embodiment, it is effective to use quartz as the lower dome 130. Thus, the lower dome 130 acts as a window. Of course, only a part of the lower dome 130 may be made of a light transmissive plate, and the remaining areas may be made of an excellent opaque plate of thermal conductivity.

The lower dome 130 has a bottom plate 131 inclined downward as shown in FIG. 1, and an extension tube 132 protruding downward from the center of the bottom plate. The bottom plate 131 is manufactured in the shape of an inverted conical shape whose upper and lower portions are opened.

In this way, the chamber 100 having the reaction space 101 is manufactured through the combination of the chamber body 110, the upper dome 120, and the lower dome 130. The chamber 100 may be equipped with a pressure regulating device, a pressure measuring device and various devices for checking the inside of the chamber 100. In addition, a view port for viewing the internal reaction space 101 from the outside of the chamber 100 may be installed. In addition, a pumping port 140 for exhausting impurities and unreacted substances in the chamber 100 is provided on the wall surface of the chamber 100, that is, the chamber body 110.

In the present exemplary embodiment, the lower heating unit 300 is disposed below the chamber 100 to heat the inside of the chamber 100.

The lower heating means 300 is composed of at least one lamp heater. The lamp heater uses a lamp heater in the form of a bulb or a circular strip.

As described above, the lower heating means 400 is disposed below the lower dome 130 made of quartz. Through this, the radiant heat of the lower heating means 300 is transmitted to the reaction space of the chamber 100 through the lower dome 130. In this case, only the region of the lower dome 130 adjacent to the lower heating means 400 may be formed of quartz.

In the present embodiment, the upper heating means 300 is disposed in the upper region 101a of the chamber 100. As such, the heat source is also provided in the upper region 101a of the chamber 100 to uniformly heat the inside of the chamber 100, and block heat loss to the upper portion of the chamber 100. In addition, the upper heating means 300 may be positioned on the substrate 10 to provide thermal energy directly to the substrate 10. Therefore, as shown in the present embodiment, the substrate 10 may be prevented from being damaged due to a sudden thermal change by providing heat to the substrate 10 through an upper heating means 300 having an electric heat source. It becomes possible.

As described above, the inside of the chamber 100 may be maintained at a process temperature by the lower heating means 400 below the chamber 100 and the upper heating means 300 above the chamber 100.

In the reaction space 101 of the chamber 100, a substrate placing means 200 is disposed on which the substrate 10 is placed.

The substrate placing means 200 lifts or lowers the drive shaft 220 and the drive shaft 220 which are connected to the susceptor 210 on which the substrate is mounted, and which are connected to the susceptor 210 and which extend outside the reaction space 101. And a driving device 230 to rotate.

It is effective that the susceptor 210 is manufactured in substantially the same plate shape as the substrate 10. In addition, it is effective to manufacture the susceptor 210 with a material having excellent thermal conductivity. The susceptor 210 is provided with at least one substrate settling region. Through this, at least one substrate 10 may be placed on the susceptor 210.

The drive shaft 220 extends to the outside of the chamber 100 through the extension pipe 132, the drive device 230 is any means used to lift and / or rotate the drive shaft 220 is used by any means It may be. For example, in this embodiment, a stage is used as the driving device 230. In this case, the stage may include a motor for lifting and / or rotating. Although not shown, the substrate mounting means 200 may further include a plurality of lift pins for assisting loading and unloading of the substrate 10.

In addition, the reaction space 101 of the chamber 100 includes a deposition gas injector 500 and an etching gas injector 610 and 620 that inject the deposition gas and the etching gas, respectively. In this case, the etching gas injectors 610 and 620 may be provided in plural numbers, and the etching gas injectors 610 and 620 may be provided in the upper region 101a and the lower region 101b of the chamber 100 based on the substrate 10. At this time, the wall surface of the chamber 100 is provided with an edge ring 111 spaced apart from the edge of the susceptor 210 by about 1 ~ 5mm is deposited to be injected into the upper region (101a) of the chamber 100 Gas may be prevented from entering the lower region 101b of the chamber 100.

The deposition gas injector 500 and the etching gas injectors 610 and 620 may be formed to face the pumping port 140. For example, the deposition gas injector 500 and the etching gas injectors 610 and 620 may be provided at the other side of the chamber 100 so as to face each other with the pumping port 140 and the substrate 10 interposed therebetween. . Thus, since the deposition gas and the etching gas injected from the deposition gas injector 500 and the etching gas injectors 610 and 620 are moved to the pumping port 140 across the substrate 10, the substrate ( The deposition process and the etching process performed in 10) are performed efficiently.

Referring to FIG. 2A, the deposition gas injector 500 and the first etching gas injector 610 are spaced apart from each other in the upper region 101a of the chamber 100. In this case as well, the deposition gas injector 500 and the first etching gas injector 610 may be directed toward the pumping port 140. In detail, a pumping port 140 is provided on the side wall surface of the chamber 100, and the deposition gas injector 500 and the first etching gas injector 610 are connected to the susceptor through the side wall surface of the chamber 100. 210 is disposed on top. In this case, the deposition gas injector 500 and the first etching gas injector 610 may be formed on the sidewall surface of the sidewall of the chamber 100, which is substantially opposite to the sidewall surface on which the pumping port 140 is provided. .

2B, at least one second etching gas injector 620 is disposed in the lower region 101b of the chamber 100. In the present embodiment, two second etching gas injectors 620 are spaced apart from each other so as to correspond to positions at which the deposition gas injector 500 and the first etching gas injector 610 are provided. In this case, it is also preferable that the second etching gas injector 620 faces the pumping port 140.

Meanwhile, injection nozzles 501, 611 and 621 are formed in the deposition gas injector 500, the first etching gas injector 610, and the second etching gas injector 620, and the deposition gas injector 500 may be disposed in the downward direction. 501 is formed, and the first etching gas injector 610 and the second etching gas injector 620 may be formed with injection nozzles 611 and 621 in at least one of a front direction, an upper direction, and a lower direction. . For example, the spray nozzles 611 and 621 may be formed in all directions including the forward, upper and lower directions. Thus, the deposition gas injected from the deposition gas injector 500 is injected to the upper portion of the substrate 10 to reduce unnecessary deposition on the inner wall of the chamber 100, the etching gas injected from the etching gas injectors (610, 620) During dry cleaning, the reaction space 101 of the chamber 100 is evenly sprayed to remove the coating film coated inside the chamber 100 as much as possible.

The method of performing a SEG process using the substrate processing apparatus comprised as mentioned above is demonstrated.

First, the substrate 10 is seated on the susceptor 210 inside the chamber 100.

Then, the inside of the chamber 100 is heated to the process temperature by using the upper heating means 300 and the lower heating means 400.

When the inside of the chamber 100 reaches the process temperature, the deposition gas is injected into the upper region 101a of the chamber 100 using the deposition gas injector 500 while rotating the susceptor 210 to the substrate 10. A vapor deposition film is formed. At this time, the deposition gas injected from the deposition gas injector 500 is guided toward the pumping port 140 across the region where the substrate 10 is seated by the action of the pumping port 140, thereby efficiently forming the deposition film. .

Subsequently, the etching gas is injected into the upper region 101a and the lower region 101b of the chamber 100 using the etching gas injectors 610 and 620. In this case, the second etching gas injectors 620a and 620b for injecting the etching gas into the lower region 101b of the chamber 100 may operate only one second etching gas injector 620a by the operator's setting. Both second etching gas injectors 620a and 620b may be operated. In this case, the etching gas injected from the etching gas injectors 610 and 620 is guided toward the pumping port 140 across the region where the substrate 10 is seated by the action of the pumping port 140. Is done.

As described above, when the deposition gas is injected and the etching gas is injected, the pumping port 140 is operated to exhaust the deposition gas and the etching gas in the chamber 10, wherein the operation of the pumping port 140 is performed. The silver may be operated continuously while the deposition gas and the etching gas are injected, or may be operated intermittently in response to the deposition of the deposition gas and the etching gas alternately.

As such, the process of supplying the deposition gas from the deposition gas injector 500 and the process of supplying the etching gas from the etching gas injectors 610 and 620 are alternately performed. Thus, even though the deposition gas is deposited inside the chamber 100, the etching is performed. Etch gas injectors 610 and 620 through which gas is injected are respectively provided in the upper region 101a and the lower region 101b of the chamber 100 to evenly inject the etching gas into the upper region 101a and the lower region 101b of the chamber. It is possible to prevent the formation of an unnecessary coating film of the deposition gas.

When the desired deposition film is formed on the substrate as described above, the substrate 10 is withdrawn from the chamber 100.

Then, as described above, the process of repeatedly forming the deposition film on the substrate is performed, and a dry cleaning is performed at a predetermined time after a predetermined time. In this case, the substrate 10 is completely removed from the inside of the chamber 100. In the withdrawn state, the upper region 101a and the lower region 101b of the chamber 100 are sprayed through the etching gas injectors 610 and 620 to remove the etching gas (cleaning gas), and the lower region together with the upper region 101a of the chamber 100. It is possible to effectively remove the coating film unnecessarily coated in the region 101b.

The present invention is not limited to the above-described embodiments, but may be implemented in various forms. That is, the above embodiments are provided to make the disclosure of the present invention complete and to fully inform those skilled in the art the scope of the present invention, and the scope of the present invention should be understood by the claims of the present application. .

1 is a vertical cross-sectional conceptual view of a substrate processing apparatus according to an embodiment of the present invention;

FIG. 2A is a schematic cross-sectional view taken along line AA ′ of FIG. 1;

FIG. 2B is a schematic cross-sectional view taken along line BB ′ of FIG. 1.

<Explanation of symbols for the main parts of the drawings>

10: substrate 100: chamber

200: substrate placing means 300: upper heating means

400: bottom heating 500: deposition gas injector

610,620: etching gas injector

Claims (10)

A chamber having a reaction space; Substrate placing means for positioning and rotating the substrate in the reaction space; Lower heating means positioned under the chamber to heat the reaction space; A deposition gas injector and a first etching gas injector for respectively injecting a deposition gas and an etching gas into an upper region of the reaction space of the chamber based on the substrate; And at least one second etching gas injector for injecting an etching gas into a lower region of the reaction space of the chamber with respect to the substrate. The method according to claim 1, The chamber is provided with a pumping port on one side, The deposition gas injector, the first etching gas injector and the second etching gas injector are disposed on the other side of the chamber to face each other with the pumping port and the substrate therebetween. The method according to claim 1, The substrate placing means includes a susceptor on which the substrate is mounted, The deposition gas injector and the first etching gas injector are disposed on the susceptor through the chamber sidewall surface, And the second etching gas injector is disposed below the susceptor through the chamber sidewall surface. The method of claim 3, The deposition gas injector is formed with a spray nozzle in the downward direction, And the first etching gas injector and the second etching gas injector are formed with a spray nozzle in at least one of a front direction, an upper direction, and a lower direction. The method according to claim 1, The chamber has a chamber body, an upper dome covering an upper region of the chamber body, and a lower dome covering a lower region of the chamber body, And the lower dome at least a portion adjacent to the heating means is formed of a light transmissive material. The method according to claim 5, And the light transmissive material is quartz. Mounting a substrate in the chamber; Supplying a deposition gas to an upper region of the chamber to form a deposition film on the substrate; Supplying an etching gas to the upper region and the lower region of the chamber, respectively, to etch the deposited film deposited on the substrate and the coating film that is unnecessarily deposited on the inner walls of the upper region and the lower region of the chamber. The method of claim 7, Forming the deposition film and etching the deposition film and the coating film are alternately repeated. The method of claim 7, After etching the deposited film and the coating film Drawing the substrate out of the chamber; Supplying an etching gas to the upper region and the lower region of the chamber, respectively, to remove the coating film coated on the inner walls of the upper region and the lower region of the chamber. The method of claim 7, In the forming of the deposited film and the etching of the deposited film and the coating film And a pumping process for exhausting the deposition gas and the etching gas supplied to the chamber to the outside of the chamber continuously or intermittently.

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