KR20110041812A - Micro thermoelectric cooer module - Google Patents

Abstract

PURPOSE: A micro thermoelectric cooling module is provided to improve the adhesion between electrode and a wiring by forming the adhesion enhancement layer of convex pattern on the top of the electrode. CONSTITUTION: A plurality of thermoelectric element comprises the N-type semiconductor and the P-type semiconductor on the top. An upper conductor(121) and a lower conductor are included in the upper and lower of the thermoelectric element. The upper plate and the lower plate are included in order to support the upper conductor and the lower conductor. A pair of electrodes is formed on one side of the lower conductor. It is formed on the top of the adhesion power improvement layer(141). A wire(150) is attached to the electrode in which the adhesion power improvement layer is formed.

Description

Micro Thermoelectric Cooling Module {MICRO THERMOELECTRIC COOER MODULE}

The present invention relates to a micro-thermoelectric cooling module, and more particularly, the present invention is a micro-thermoelectric cooling that can improve the durability by forming an adhesion layer of the concave-convex pattern on the top of the electrode to further increase the adhesion of the electrode and the wire It is about a module.

Thermoelectric Element is a generic term for elements that use various effects caused by the interaction of heat and electricity.Thermistor, temperature, which is a device with the characteristics of negative resistance temperature coefficient that decreases as the temperature increases, the electrical resistance decreases. There is a device using the Seebeck effect, a phenomenon in which electromotive force is generated by a difference, and a device using the Peltier effect, a phenomenon in which heat absorption (or generation) is caused by current.

In particular, the Peltier effect, a thermo-electric heat pump, is a thermoelectric cooling module (thermoelectric cooler module) that is a small solid-state device capable of performing a cooling function similar to a freon compressor or an endothermic refrigerator.

The Peltier effect is a phenomenon in which one side is heated and the other side is cooled according to the direction of current when DC power is applied to two different electrical conductors, and this phenomenon is caused by electrons moving from one semiconductor to the other. This occurs because it absorbs thermal energy to raise the level.

Figure 1 shows a simple circuit that can explain the operating principle of such a thermoelectric cooling module. When the N-type semiconductor (semiconductor whose current carrier is mainly electrons) and the P-type semiconductor (semiconductor whose current carriers are mainly holes) are connected as shown in FIG. In the process of moving electrons from the N-type semiconductor to the P-type semiconductor, electrons passing through the upper substrate 5 absorb thermal energy, thereby cooling the upper substrate 5, and in the lower substrate 4 The lower substrate 4 is heated because they release heat energy.

The thermoelectric cooling module is changed in efficiency and capacity according to the operating environment, it is well known that the greater the temperature difference between both sides of the cold and hot, the lower the efficiency.

 Therefore, the efficiency of the thermoelectric cooling module increases as the temperature difference between both sides of the cold temperature of the thermoelectric cooling module is reduced. As such, the thermoelectric cooling module is an element that enables the exchange of electrical energy and thermal energy.

In general thermoelectric cooling modules, a P-type semiconductor and an N-type semiconductor are arranged to cross each other on a plane and connected to each other by a conductor, and a pair of positive and negative wires are coupled to supply electricity thereto, and a substrate is covered on the upper and lower sides. Lose.

At this time, when electricity of (+) and (-) is applied from the outside, endothermic phenomenon occurs on one side and heat dissipation phenomenon occurs on the other side.

On the other hand, with the recent development of the information industry, high-performance small electronic devices are increasing, and the heat generation density of semiconductor devices used is also increasing.

Therefore, since high performance and miniaturization of cooling devices for efficiently cooling heat generated in small electronic devices are required, the thermoelectric cooling module can improve cooling performance as compared with the conventional bulk thermoelectric cooling module. Interest in modules is growing.

The micro thermoelectric cooling module has a very small width of several to several tens of mm in the length and width of the entire module, and is very difficult to manufacture by a conventional method, and is manufactured using microelectromechanical systems (MEMS). How to do this has been proposed.

However, the micro-thermoelectric cooling module has a problem that since the total size is very small, the area to which the electrode is attached is also very narrow, and thus the adhesive force can be easily dismantled by external force, and it is difficult to have sufficient durability.

The present invention has been made to solve the problems described above, an object of the present invention is easy to manufacture by forming an adhesion layer of the concave-convex pattern on the upper portion of the electrode, but can easily increase the adhesion between the electrode and the wire, durability It is to provide a micro thermoelectric cooling module that can improve the.

The micro thermoelectric cooling module 100 of the present invention is a micro thermoelectric cooling module 100, the thermoelectric element 110 including a plurality of N-type semiconductor 111 and P-type semiconductor 112 disposed on the upper side; Upper and lower conductors 121 and 122 provided on upper and lower sides of the thermoelectric element 110; An upper substrate 131 and a lower substrate 132 provided to support the upper conductor 121 and the lower conductor 122; A pair of electrodes 140 formed on one side of the lower conductor 122; An adhesion force improving layer 141 formed on the electrode 140; And an electric wire 150 attached to the electrode 140 having the adhesion force improving layer 141 formed thereon.

At this time, the adhesion force enhancement layer 141 is characterized in that formed in a concave-convex pattern, more preferably, the concave-convex pattern of the adhesion force enhancement layer 141 is formed to be orthogonal to the attachment direction of the wire 150. It is characterized by.

Accordingly, the micro thermoelectric cooling module of the present invention can be easily manufactured by increasing the adhesion force between the electrode and the wire by forming the adhesion force enhancement layer of the concave-convex pattern on the electrode, and has the advantage of improving durability.

Hereinafter, the micro thermoelectric cooling module 100 of the present invention as described above will be described.

2 is a perspective view of the micro thermoelectric cooling module 100 according to the present invention, Figure 3 is a cross-sectional view of the micro thermoelectric cooling module 100 according to the present invention.

The micro-thermoelectric cooling module 100 of the present invention has a small length of several tens to several tens of mm in width and length of the entire module, and a thickness of the thermoelectric element is thin in several to several tens of μm. The thermoelectric element 110 and the upper conductor And a lower conductor 122, an upper substrate 131 and a lower substrate 132, an electrode 140, an adhesion force improving layer 141, and an electric wire 150.

The thermoelectric element 110 includes a plurality of N-type and P-type semiconductors 111 and 112 and is arranged in plural, and Peltier, which is a phenomenon in which heat is absorbed (or generated) due to interaction between heat and electricity, in particular, by a current. It is an element using the effect.

In this case, a plurality of thermoelectric elements 110 are disposed, and upper and lower conductors 121 and lower conductors 122 are disposed above and below the thermoelectric element 110 to electrically connect the N-type and P-type semiconductors 111 and 112. It is provided.

That is, the upper conductor 121 and the lower conductor 122 are provided to allow electrons between the N-type semiconductor 111 and the P-type semiconductor 112 to move, and the thermoelectric elements on the upper side and the lower side of the thermoelectric element 110. Support element 110.

The upper substrate 131 and the lower substrate 132 are portions forming a basic body supporting the thermoelectric element 110, the upper conductor 121, and the lower conductor 122 disposed therebetween.

The electrode 140 is a portion to which the wire 150 for applying power is connected, and a pair is provided to connect (+) and (-) power to one side of the upper conductor 121 or the lower conductor 122. It is provided.

As the electrode 140 is formed in micro units, the length of the forming region is small by several to several tens of mm in length and width, and it is difficult to attach the electrode 140 itself, and the fastening is performed by external force. Since the present invention can be easily dismantled, the present invention allows the adhesion enhancing layer 141 to be formed on top of the electrode 140.

The adhesion force improving layer 141 is formed on the upper side of the electrode 140 to increase the adhesion between the wire 150 and the electrode 140, and is formed to have a predetermined pattern.

In this case, the adhesion force improving layer 141 may be formed to have an uneven pattern so that the contact area of the wire 150 may be further improved, and the uneven pattern may be perpendicular to the attachment direction of the wire 150. Is formed.

That is, a plurality of adhesion force improving layer 141 is formed in the electrode 140 in a direction orthogonal to the direction in which the wire 150 is attached so that the contact area in the entire area where the wire 150 is attached to the electrode 140 To be increased.

The adhesion force enhancing layer 141 may include various methods for forming an uneven pattern, including a deposition method such as sputtering and vacuum deposition.

The adhesion enhancing layer 141 forms a thin film such as platinum (Platinum, Pt), gold (Gold, Au), aluminum (Al), copper (Cu), tungsten (W), or the like by a deposition method such as sputtering or vacuum deposition. Thus, the uneven pattern may be formed through various microfabrication processes such as dry etching and wet etching.

Through this, the micro thermoelectric cooling module 100 of the present invention is easy to manufacture by forming an adhesion force enhancement layer 141 having an uneven pattern on the electrode 140, while maintaining the adhesion between the electrode 140 and the wire 150. It can be higher and has the advantage of improving durability.

Referring to the operation of the micro-thermoelectric element of the present invention, when the power is applied through the wire 150, in the process of moving electrons from the N-type semiconductor 111 to the P-type semiconductor 112, the upper substrate 131 As the electrons passing through absorb the thermal energy, the upper substrate 131 side is cooled.

The present invention is not limited to the above-described embodiments, and the scope of application is not limited, and various modifications can be made without departing from the gist of the present invention as claimed in the claims.

1 is a view showing the operating principle and basic form of the thermoelectric cooling module.

2 is a perspective view of a micro thermoelectric cooling module according to the present invention.

3 is a cross-sectional view of a micro thermoelectric cooling module according to the present invention.

DESCRIPTION OF REFERENCE NUMERALS

100: micro thermoelectric cooling module

110: thermoelectric element 111: N-type semiconductor

112: P-type semiconductor

121: upper conductor 122: lower conductor

131: upper substrate 132: lower substrate

140 electrode 141 adhesion layer

150: wires

Claims (3)

In the micro thermoelectric cooling module 100 having a length and a length of several tens of mm, A thermoelectric element 110 including a plurality of N-type semiconductors 111 and P-type semiconductors 112 disposed thereon; Upper and lower conductors 121 and 122 provided on upper and lower sides of the thermoelectric element 110; An upper substrate 131 and a lower substrate 132 provided to support the upper conductor 121 and the lower conductor 122; A pair of electrodes 140 formed on one side of the lower conductor 122; An adhesion force improving layer 141 formed on the electrode 140; And And an electric wire (150) attached to the electrode (140) on which the adhesion force improving layer (141) is formed. The method of claim 1, The adhesion force improving layer 141 is a micro thermoelectric cooling module, characterized in that formed in an uneven pattern. The method of claim 2, The uneven pattern of the adhesion force enhancement layer 141 is formed to be orthogonal to the attachment direction of the wire 150, micro thermoelectric cooling module.

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