KR20110041352A - Measuring pattern structure, adjustment structure, substrate treatment apparatus and substrate treatment method - Google Patents

Abstract

PURPOSE: A measurement pattern structure, an adjustment structure, a substrate processing device, and a substrate processing method are provided to adjust a chamber according to a position by using the measurement pattern structure in contact with a dielectric unit of induced coupled plasma. CONSTITUTION: A substrate(10) is mounted on a substrate holder(110). A dielectric unit(120) is separated from the substrate holder to provide a plasma generation space. An antenna(130) is electrically connected to a power source(20) and supplies ion energy to the substrate by making plasma. A side pattern structure(140) includes a side pattern with a different structure according to a position.

Description

Measuring pattern structure, correction structure, substrate processing apparatus and substrate processing method {Measuring pattern structure, Adjustment structure, Substrate treatment apparatus and Substrate treatment method}

The present invention relates to a measurement pattern structure, a correction structure, a substrate processing apparatus, and a substrate processing method, and more particularly, is disposed in a dielectric part in an inductively coupled plasma so as to quickly find a position-specific chamber correction degree for position-specific process result correction. A measurement pattern structure, a correction structure, a substrate processing apparatus, and a substrate processing method.

Inductively coupled plasma apparatuses are used in various processes such as etching, deposition, ion implantation, and material surface treatment. Inductively coupled plasma apparatuses are used in processes such as semiconductor substrates, flat panel display substrates, and solar cell substrates. As the large area of the substrate and the delicate treatment of the substrate are required, the effect of unintended process unevenness on the process result is becoming an important problem. In order to solve this problem, it is very costly and time-consuming to find the degree of chamber correction by location that enables the desired location-specific process results.

The process results by position on the substrate depend not only on the position distribution of various process variables such as process gas, substrate temperature, and plasma characteristics, but also because the relationship between the various process variables and process results is not linear, thus correcting chambers by position from the process results. There is a difficulty in deriving the degree theoretically.

An object of the present invention is to provide a measurement pattern structure, a correction structure, a substrate processing apparatus, and a substrate processing method for providing a uniform process.

The measurement pattern structure according to the embodiment of the present invention is disposed in contact with an upper surface or a lower surface of a dielectric portion positioned below the antenna electrically connected to a power source to generate a plasma, and blocking the plasma generated below. Including a measurement pattern having a different structure depending on the position, the measurement pattern is arranged unevenly according to the position, to generate a plasma with different energy transfer conditions depending on the position.

In addition, the correction structure according to the embodiment of the present invention is disposed in contact with the upper surface or the lower surface of the dielectric portion which is located under the antenna electrically connected to the power source to generate the plasma to block the plasma generated from the bottom, After providing a measurement pattern structure including a measurement pattern having a different structure according to the following, the substrate is processed using a plasma formed by applying power to the antenna, and the process results of the substrate is irradiated according to the position of the optimum process results It is formed by selecting and transferring the measurement pattern corresponding to the optimum process result.

In addition, the substrate processing apparatus according to the embodiment of the present invention includes a substrate holder on which the substrate is mounted; A dielectric part spaced apart from the substrate holder to block a plasma; An antenna electrically connected to a power source to generate a plasma and disposed above the dielectric part; And a measurement pattern structure disposed in contact with the top or bottom surface of the dielectric part, the measurement pattern structure including a measurement pattern having a different structure according to a position, wherein the measurement pattern structure generates plasma under different energy application conditions according to the position.

The measurement pattern structure may include a first measurement pattern, wherein the first measurement pattern has a thickness different according to a position, and the measurement pattern may be silicon, ceramic, or quartz.

In addition, the measurement pattern structure, the first measurement pattern; And a second measurement pattern disposed on the first measurement pattern, wherein a sum of the thickness of the first measurement pattern and the thickness of the second measurement pattern may be constant according to a position.

In addition, the dielectric portion has a disk shape, and the antenna includes a one-turn antenna, a multi-turn antenna, a spiral antenna, a three-dimensional antenna, a parallel resonance antenna, and a plurality of antennas. Any one of a hybrid antenna including a frequency, and the measurement pattern structure, as a circle may be divided into a plurality of evenly divided along the azimuth.

In addition, the substrate processing method according to an embodiment of the present invention is disposed in contact with the upper surface or the lower surface of the dielectric portion for blocking the plasma generated from the lower side of the antenna electrically connected to the power source to generate the plasma, Providing a measurement pattern structure comprising a measurement pattern having a different structure according to; Processing the substrate using a plasma formed by applying power to the antenna; Selecting an optimum process result by examining the process result of the substrate according to a position; Transferring a measurement pattern corresponding to the optimum process result to a correction structure; And processing the substrate using the correction structure.

Here, the measurement pattern structure may include a first measurement pattern, the first measurement pattern may have a thickness different according to a position, and the measurement pattern may be silicon.

In addition, the measurement pattern structure, the first measurement pattern; And a second measurement pattern disposed on the first measurement pattern, wherein a sum of the thickness of the first measurement pattern and the thickness of the second measurement pattern may be constant according to a position.

In addition, the measurement pattern structure may differently transfer energy transfer efficiency to a position between the dielectric part and the plasma.

Moreover, the dielectric part is disc-shaped, and the antenna is any one of a hybrid antenna including a single rotating antenna, a multi-rotating antenna, a spiral antenna, a three-dimensional antenna, a parallel resonance antenna, and a plurality of frequencies. The measurement pattern structure can be divided into a plurality of parts evenly along the azimuth as a circle.

According to the measurement pattern structure, the correction structure, the substrate processing apparatus, and the substrate processing method according to the present invention, by using the measurement pattern structure disposed in contact with the dielectric portion of the inductively coupled plasma, the degree of chamber correction for each position for a uniform process can be determined. It is possible to provide a uniform process by using a correction structure reflecting non-uniform process results.

The uniformity of the inductively coupled plasma substrate processing process may depend on substrate top process variables, such as the uniformity of energy supplied over the substrate by the antenna, and substrate bottom process variables below the substrate.

A substrate processing method according to an embodiment of the present invention intentionally and non-uniformly forms an upper substrate process variable by using a measurement pattern structure disposed on a dielectric portion facing the substrate, and reflects the process result of the substrate to correct the correction structure. By forming the structure, it is possible to ensure the uniformity of the substrate processing process using the formed correction structure.

In other words, the spatial distribution of the plasma density can be locally adjusted across the substrate in order to obtain spatial uniformity of plasma etching and deposition. If the characteristics of the dielectric part provided to block the antenna and the plasma generating space are spatially different, a uniform process may be provided to the substrate.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the thicknesses of layers (or films) and regions are exaggerated for clarity. In addition, where a layer (or film) is said to be "on" another layer (or film) or substrate, it may be formed directly on another layer (or film) or substrate, or a third layer (between) Or membrane) may be interposed. Portions denoted by like reference numerals denote like elements throughout the specification.

1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention, Figure 2 is a cross-sectional view showing a substrate processing apparatus according to another embodiment of the present invention, Figure 3 is a substrate processing apparatus according to another embodiment of the present invention It is sectional drawing which shows.

1 and 2, the substrate processing apparatus includes a processing container 100, a substrate holder 110, a dielectric portion 120, an antenna 130, and a measurement pattern structure 140.

Here, the substrate processing apparatus may be an inductively coupled plasma apparatus. In this case, the inductively coupled plasma apparatus may perform a deposition process, an etching process, a sputtering process, an ion implantation process, and the like.

The processing vessel 100 may be a vacuum vessel. The substrate 10 is mounted on the substrate holder 110.

The dielectric part 120 is made of a dielectric material and is spaced apart from the substrate holder 110 to provide a plasma generating space while blocking the plasma generated from the bottom.

The antenna 130 is electrically connected to the power source 20 and disposed above the dielectric part 120. The antenna 130 may be energy applying means for forming a plasma. The antenna 130 may form plasma to supply ion energy to the substrate 10. The power source 20 connected to the antenna 130 may be an AC power source, an RF power source, or an ultra high frequency power source. As shown in FIG. 1, when the power source 20 is an RF power source, the power source 20 may include a matching box 30 matching RF power. In this case, the bias power source 40 and the matching box 30 may be connected to the substrate holder 110. As shown, the power source 20 and the bias power source 40 may be provided in plural. The antenna 130 may be a one-turn antenna, a multi-turn antenna, a spiral antenna, a three-dimensional antenna, a parallel resonant antenna, or a hybrid antenna including a plurality of frequencies. Various kinds of known ones can be used. The antenna 130 may be provided inside by a separate cover 60.

The measurement pattern structure 140 is disposed while contacting the upper surface of the dielectric portion 120 between the dielectric portion 120 and the antenna 130 as shown in FIG. 1, and includes a measurement pattern having a different structure depending on the position. do. The measurement pattern structure 140 can provide the intended plasma non-uniformity by location. The measurement pattern structure 140 may include one or more measurement patterns (not shown). The measurement pattern may change the energy transfer efficiency from the antenna 130 to the plasma according to the position to generate process nonuniformity according to the position of the substrate 10.

Meanwhile, the measurement pattern structure 140 may be disposed while contacting the lower surface of the dielectric portion 120 instead of the upper surface of the dielectric part 120 as shown in FIG. 2. In this case, the measurement pattern structure 140 may be coupled to the dielectric part 120 by a fastening member such as a bolt.

The measurement pattern structure 140 may be transferred and replaced by the correction structure 150 which will be described later. The correction structure 150 may be manufactured to improve process uniformity by using the positional accuracy of the position obtained through the measurement pattern structure 140. For example, in an inductively coupled plasma etching process, the center of the substrate 10 may have a high etching rate, and the edge of the substrate 10 may have a low etching rate. In this case, the compensation structure 150 having different structures at the edge of the substrate 10 and the center of the substrate may provide a spatially uniform process to the substrate 10.

Like the measurement pattern structure 140 described with reference to FIGS. 1 and 2, the correction structure 150 may be separately manufactured and disposed above or below the dielectric part 120 to contact the dielectric part 120.

In addition, when transferring the correction structure 150, the medium between the pattern regions may be continuously changed in order to reduce the process unevenness caused by the abrupt change in the pattern region boundary formed in the correction structure 150. As shown in FIG. 3, the correction structure 150 and the dielectric part 120 may be integrally manufactured to achieve a uniform optimal process.

4 is a plan view showing a measurement pattern structure according to an embodiment of the present invention, Figure 5 is a plan view showing a correction structure according to an embodiment of the present invention.

Referring to FIG. 4, the dielectric portion 120 and the measurement pattern structure 140 corresponding thereto may be circular. Depending on the shape and arrangement of the antenna 130, the radial process may be uniform. For example, the antenna 130 may be a one-turn antenna. In this case, the measurement pattern structure 140 may be divided into a plurality of parts on the basis of the planar center. Referring to FIG. 4, the measurement pattern structure 140 may be equally divided into four regions to form four unit patterns 140a, 140b, 140c, and 140d. Not only four unit patterns, but various numbers may be formed as necessary.

Each of the unit patterns 140a, 140b, 140c, and 140d may further include a measurement pattern structure 140 including measurement patterns Am evenly divided along the azimuth angle. Where m may be a positive integer. For example, it may include four measurement patterns A1 to A4. If necessary, the measurement patterns Am may not be the same area. According to this embodiment, the measurement pattern structure 140 may be used for process correction that is uniform in the radial direction but uneven in the azimuth direction.

The substrate 10 is processed using a plasma formed by applying power to the antenna 130 in a state in which the measurement pattern structure 140 illustrated in FIG. 4 is disposed on the upper surface of the dielectric part 120, and the substrate 10 is processed. The process result of) is examined by the position to select the optimum process result. In other words, when the same or similar process result is selected in each of the unit patterns 140a, 140b, 140c, and 140d, the position where the process is performed under the optimum conditions can be known.

For reference, when finding the position where the process is performed at the optimum condition, the change in the condition of the abrupt condition at the split interface of the measurement patterns A1 to A4, the property of the surrounding pattern, or the property at the pattern interface is influenced locally. In order to minimize the effect, finding the optimum conditions near the center of each of the measurement patterns A1-A4 allows for more precise results. In addition, the process change in the positional difference of the process, such as near the point to enter the antenna 130 in the processing container 100, near the point connected to the ground portion, does not cause the illusion that it is due to the change of the pattern In order to avoid this problem, a method of dividing the corresponding part into fine splits, or applying a measurement pattern method to only the part except the corresponding part, first correcting only the uniformity of the area excluding the part, and then separately correcting the corresponding part. Care should be taken to ensure that local process results do not apply to a wide range of measures through separate measures.

In the unit pattern 140a corresponding to the first quadrant of the measurement pattern structure 140, the measurement pattern A4 and in the unit pattern 140b corresponding to the second quadrant, the measurement pattern A3 and the unit pattern 140c corresponding to the third quadrant In the unit pattern 140d corresponding to the measurement pattern A1 and the four quadrants, if the process degree performed on the substrate 10 is the same when the measurement pattern A2 is selected, the region selected from the four unit patterns is selected. When transferred to each unit pattern as a whole, the chamber can be corrected so that the process for each unit pattern can be made at the same level.

Accordingly, the correction structure 150 may be formed by transferring the measurement pattern corresponding to the optimum process result as shown in FIG. 5. That is, the measurement pattern A4 is measured in the entire region corresponding to the unit pattern 140a, the measurement pattern A3 is measured in the entire region corresponding to the unit pattern 140b, and the measurement pattern is measured in the entire region corresponding to the unit pattern 140c. The correction structure 150 may be formed by transferring the measurement pattern A2 in the entire area corresponding to the pattern A1 and the unit pattern 140d. When transferring the respective measurement patterns A1 to A4, the medium between the areas of the measurement patterns A1 to A4 in order to reduce the process unevenness caused by the abrupt change in the boundary of the measurement patterns A1 to A4. It can also manufacture so that it may change continuously. The correction structure 150 may be separately manufactured and disposed above or below the dielectric part 120 to contact the dielectric part 120, or may be manufactured integrally with the dielectric part 120. If the result corrected by the uniformity correction method is not the desired level, the process is performed again by changing the size, shape, change amount between the splits, the number of splits, etc. of the unit measurement / correction pattern to perform high level chamber correction. can do.

6A is a plan view illustrating a measurement pattern structure according to another exemplary embodiment of the present invention, and FIG. 6B is a cross-sectional view taken along the line I-I of FIG. 6A in an azimuth direction.

6A and 6B, the measurement pattern structure 140 may also be circular here. The dielectric portion disposed in the measurement pattern structure 140 may be a corresponding circle. The measurement pattern structure may be used to correct process uniformity in the radial direction when the process result has azimuth symmetry. Depending on the shape and arrangement of the antenna 130, the radial process may not be uniform. In this case, the measurement patterns Am of the measurement pattern structure 140 may be arranged in the radial direction. M may be a positive integer, and may be arranged along the radial direction. For example, the measurement pattern A2 may include eight split areas A2 (1) to A2 (8). The measurement patterns Am may not be the same area. The measurement pattern A2 may include a first measurement pattern 142 and a second measurement pattern 144 disposed on the first measurement pattern 142. The total thickness of the measurement pattern A2 is constant, and the ratio of the thicknesses of the first measurement pattern 142 and the second measurement pattern 144 may be discontinuously increased or decreased in the azimuth direction. According to this embodiment, the measurement pattern structure 140 may be used to correct uniformity in the radial direction.

Hereinafter, an example in which the planar shape of the dielectric part 120, the measurement pattern structure 140, and the correction structure 150 is a quadrangle will be described.

7A is a cross-sectional view of a measurement pattern structure according to still another embodiment of the present invention, and FIG. 7B is a diagram illustrating a virtual spatial distribution of deposition rates of a substrate when the substrate is processed using the measurement pattern structure of FIG. 7A.

Referring to FIGS. 7A and 1, the measurement pattern structure 140 may be disposed to face the substrate 10 in contact with the dielectric part 120. The measurement pattern structure 140 may include one or more measurement patterns A1 to A12. The measurement pattern A1 may include a structure different according to the position. The measurement pattern A2 may include four split areas A2 (1-4) having a structure according to a position. Split regions can result in a spatially non-uniform process depending on its location in the substrate 10.

The measurement pattern A1 may include a first measurement pattern 142 and a second measurement pattern 144 disposed on the first measurement pattern 142. The total thickness t of the first measurement pattern 142 and the second measurement pattern 144 may be constant. The ratio d1 (x) / d2 (x) of the thicknesses of the first measurement pattern 142 and the second measurement pattern 144 may be different depending on the position x. The measurement pattern A2 may include first to fourth split regions A2 (1), A2 (2), A2 (3), and A2 (4). The split regions A2 (1), A2 (2), A2 (3), and A (4) may have different energy transfer efficiencies.

The measurement patterns A1 to A12 may be disposed adjacent to each other in the same plane. The split regions A2 (1), A2 (2), A2 (3) and A2 (4) of the measurement pattern A2 spatially differ in energy transfer efficiency for transferring energy of the antenna 130 to the plasma. can do. Accordingly, the measurement pattern A1 may provide non-uniform process results on the facing substrate.

According to a modified embodiment of the present invention, at least one of the dielectric constant, electrical conductivity, thermal conductivity, and permeability of the first measurement pattern 142 and the second measurement pattern may be different from each other.

According to a modified embodiment of the present invention, the measurement pattern A1 may have a different structure, material, pattern, or shape depending on the position.

Referring to FIG. 7B, when a deposition process is performed on a substrate using the measurement pattern structure 140, a virtual spatial distribution of deposition rates is displayed.

1, 2, 7A, and 7B, the spatial distribution of deposition rates may depend on substrate top process variables, such as plasma density in the processing vessel, and substrate bottom process variables, such as temperature uniformity of the substrates. The measurement pattern A1 can form the plasma density nonuniformly. Accordingly, the substrate 10 may have a non-uniform deposition rate on the measurement pattern A1. The measurement pattern structure 140 may include one or more measurement patterns A1 to A12. The measurement patterns A1 to A12 and the substrate regions B1 to B12 may correspond one-to-one.

Process results or process characteristics of the substrate regions B1 to B12 may be investigated. In the case of a deposition process, the process characteristics may be step coverage, deposition rate, film quality, or composition ratio of the film. In the case of an etching process, the process characteristics may be etch rate, selectivity, or etch anisotropy. In the case of a plasma ion implantation process, it may be a density of implanted ions or a concentration distribution of ions. After examining these process characteristics according to the position of the substrate 10, optimal process positions can be selected. The structure of the measurement patterns A1 to A12 corresponding to the selected process positions may be transferred to a correction structure (not shown). Accordingly, the correction structure can process the substrate 10 with the optimum process conditions depending on the position.

For example, split regions corresponding to the common deposition rate 11 may be selected in the substrate regions B1 to B12. Each unit pattern may include a split region in which deposition corresponding to the common deposition rate 11 is performed. If the split region corresponding to the common deposition rate 11 does not exist for each pattern, extrapolation / interpolation is used to determine the measurement pattern structure corresponding to the common deposition rate, or the split region corresponding to the common deposition rate exists for each pattern. Change the number of splits of some or all of the patterns on the measurement pattern structure or the range of structural change of the splits so that they can be applied again.

The structure of the split regions corresponding to the common deposition rate 11 may be different depending on the position. A correction structure (not shown) reflecting the structure of the split regions of the measurement patterns A1 to A12 corresponding to the common deposition rate 11 for each measurement pattern may secure process uniformity.

FIG. 8A is a cross-sectional view illustrating a correction structure according to another embodiment of the present invention, and FIG. 8B is a diagram illustrating a virtual spatial distribution of a deposition rate of a substrate using the correction structure of FIG. 8A.

7A, 7B, 8A, and 8B, the correction structure 150 may have structures of the measurement patterns A1 to A12 corresponding to the common deposition rate 11 of FIG. 7B according to positions. have.

The correction structure 150 may include one or more correction patterns C1 to C12. The correction patterns C1 to C12 may correspond one-to-one with the measurement patterns A1 to A12. When the deposition process is performed on the substrate 10 using the correction structure 150, the deposition rate may be spatially uniform. The area of the correction patterns C1 to C12 and the area of the measurement patterns A1 to A12 may be the same. The correction pattern C1 may include a first correction pattern 152 and a second correction pattern 154. The thickness d3 of the first correction pattern 152 of the correction pattern C1 and the thickness d4 of the second correction pattern 154 may each correspond to a first measurement pattern corresponding to the common deposition rate of the measurement pattern A1. 142 may be equal to the thickness d1 (A (2)) and the thickness t-d1 (A (2)) of the second measurement pattern 144.

9A is a perspective view illustrating a measurement pattern structure according to another embodiment of the present invention, and FIG. 9B is a plan view of FIG. 9A.

9A and 9B, the measurement pattern structure 140 may include a plurality of measurement patterns Amn. Here, m and n may be a positive integer. The measurement patterns Amn may be arranged in a matrix form in a first direction and a second direction crossing the first direction. The measurement pattern Amn may include a first measurement pattern 142 and a second measurement pattern 144 disposed on the first measurement pattern 142. The first measurement pattern 142 may have a step shape. The total thickness of the first measurement pattern 142 and the second measurement pattern 144 may be constant. The ratio of the thicknesses of the first measurement pattern 142 and the second measurement pattern 144 may vary depending on the position. The measurement pattern Amn may include three split regions A11 (1), A11 (2), and A11 (3). Split regions may have ratios of different thicknesses. The thickness of the first measurement pattern 142 of the first split area A11 (1) may be 1 (arbitrary unit). The thickness of the first measurement pattern 142 of the second split area A11 (2) may be 2 (arbitrary unit). The thickness of the first measurement pattern 142 of the third split area A11 (3) may be 3 (arbitrary unit).

According to a modified embodiment of the present invention, the measurement pattern Amn may have a different pattern, material or structure depending on the position. Changes in pattern, material, or structure with location may be continuous or discontinuous. When the change in the pattern, material, or structure is discontinuous, the measurement pattern Amn is divided into one or more split areas, and each split area may be configured of the same pattern, material, or structure. However, the split regions can be fabricated with different patterns, materials, or structures. If the pattern, material, or structure changes continuously according to the position of the measurement pattern Amn, the measurement pattern Amn prevents distortion of electric or magnetic fields, which may occur in terms of discontinuous changes, and measurement and correction. There is an advantage that can be performed by selecting the desired precision. On the other hand, in the case where the change of the pattern, material, or structure according to the position of the measurement pattern Amn is discontinuous, the measurement pattern may be made of split areas as a ready-made product, and a combination of the split areas may be used to cheaply and quickly construct various measurement pattern structures. There are advantages to it. The width of the split region may be greater than the minimum change distance due to the spatial distribution of process variables affecting the substrate.

According to a modified embodiment of the present invention, the total thickness of the measurement pattern is constant, and the material of the measurement pattern may vary depending on the position. Such materials may have variables such as different thermal conductivity, permeability, and dielectric constant.

According to a modified embodiment of the present invention, the total thickness of the measurement pattern is constant, and the measurement pattern may be manufactured in a form in which one or more materials are mixed. At this time, the mixing ratio of each material may vary depending on the location. In this case, different materials may have variables such as different thermal conductivity, magnetic flux transmittance, and dielectric constant.

FIG. 10 is a diagram illustrating a virtual deposition rate distribution when a deposition process of a substrate is performed using the measurement pattern structure of FIG. 9A.

10 and 9B, the measurement patterns Amn of the measurement pattern structure 140 and the substrate regions Bmn of the substrate 10 may correspond one to one. The substrate region Bmn may be divided into three substrate split regions Bmn (1), Bmn (2), and Bmn (3) according to the structure of the measurement pattern. Deposition rates (l, m, n) of the substrate corresponding to the substrate split regions B11 (1), B11 (2), and B11 (3) may be measured. The uniformly processed regions of the substrate 10 or the regions having optimum process conditions may be selected as regions having deposition rates of m (B11 (3), B21 (2), ...).

11A is a perspective view illustrating a correction structure according to another embodiment of the present invention, and FIG. 11B is a plan view of the correction structure of FIG. 11A.

11A and 11B, the correction structure 150 may have a vertical structure of a measurement pattern structure corresponding to uniformly processed regions (regions having a deposition rate of m) of the substrate 10 of FIG. 10. The correction structure 150 may include a plurality of correction patterns Cmn. The area of the correction process pattern Cmn and the measurement pattern Amn may be the same.

When the region B11 (3) having a deposition rate of m of the substrate region B11 of the substrate 10 is selected as a uniform processing region or an optimal process region, the corresponding correction pattern C11 of the correction structure 150 is It may have a vertical structure of the measurement pattern A11 (3) disposed below the region B11 (3) having a deposition rate of m of the substrate region B11. The process pattern Cmn may include a first correction pattern 152 and a second correction pattern 154. The number in FIG. 11B is the thickness of the first correction pattern 152 of the process pattern Cmn.

According to a modified embodiment of the present invention, the correction patterns Cmn may have different patterns, materials, or structures.

12 is a perspective view showing a measurement pattern structure according to another embodiment of the present invention.

Referring to FIG. 12, the measurement pattern structure 140 may include measurement patterns Amn arranged in a matrix in a first direction and a second direction crossing the first direction. The measurement pattern A11 may include a first measurement pattern 142 and a second measurement pattern 144 disposed on the first measurement pattern 142. The total thickness of the measurement pattern A11 is constant, and the ratio of the thicknesses of the first measurement pattern 142 and the second measurement pattern 144 may increase or decrease continuously along the first direction. At least one of the thermal conductivity, the electrical conductivity, the dielectric constant, and the magnetic permeability may be different from each other.

13 is a perspective view showing a measurement pattern structure according to another embodiment of the present invention. The measurement pattern structure can be used to calibrate the chamber to simultaneously control two or more variables simultaneously to have a desired positional process degree distribution.

Referring to FIG. 13, the measurement pattern structure 140 may include measurement patterns Amn arranged in a matrix in a first direction and a second direction crossing the first direction. The measurement pattern A11 may include a first measurement pattern 242 and a second measurement pattern 244 disposed on the first measurement pattern 242. The total thickness of the first measurement pattern 242 and the second measurement pattern 244 may be constant. The ratio of the thicknesses of the first measurement pattern 242 and the second measurement pattern 244 may be continuously increased or decreased in the second direction. At least one of the thermal conductivity, the electrical conductivity, the dielectric constant, and the magnetic permeability may be different materials.

The third measurement pattern 246 may be disposed on the second measurement pattern 244. The fourth measurement pattern 248 may be disposed on the third measurement pattern 246. The thickness of the third measurement pattern 246 may vary discontinuously along the first direction. The third measurement pattern 246 and the fourth measurement pattern 248 may be at least one of thermal conductivity, electrical conductivity, dielectric constant, and permeability, may be different materials.

According to a modified embodiment of the present invention, the measurement pattern structure 140 may be manufactured in two or more layers. The measurement pattern structure 140 may control the measurement accuracy by adjusting the difference between the split regions through the combination of each layer, or widen the range of correction by adjusting the magnitude of the total change amount.

14 is a perspective view showing a measurement pattern structure according to another embodiment of the present invention.

Referring to FIG. 14, the measurement pattern structure 140 may include measurement patterns Am arranged in a first direction. The measurement pattern Am may include a first measurement pattern 142. The first measurement pattern 142 may have a step shape having a different thickness depending on a location. The first measurement pattern 142 may be silicon.

According to a modified embodiment of the present invention, the measurement pattern structure may include a first measurement pattern whose thickness varies continuously according to a position.

15 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.

Referring to FIG. 15, the substrate treating method may include steps S10 to S50.

In step S10, the upper surface of the dielectric portion 120 is in contact with the dielectric portion 120 for forming the plasma and the antenna 130 electrically connected to the power supply 20 and disposed above the dielectric portion 120. It is arranged while providing, and provides a measurement pattern structure 140 including a measurement pattern having a different structure depending on the position.

In operation S20, the substrate 10 is processed using a plasma formed by applying power to the antenna 140. In step S30, the process result of the substrate 10 is irradiated according to a position to select an optimal process result. In step S40, the measurement pattern corresponding to the optimum process result is transferred to the correction structure 150. In step S50, the substrate 10 is processed using the correction structure 150.

Thus, according to the present invention, the measurement pattern structure 140 disposed in contact with the dielectric portion 120 of the inductively coupled plasma provides non-uniformity of the process result of the plasma and the substrate 10 according to the position of the substrate 10. The chamber structure may be provided by using the correction structure 150 reflecting the non-uniform process result.

1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.

2 is a cross-sectional view illustrating a substrate processing apparatus according to another embodiment of the present invention.

3 is a cross-sectional view illustrating a substrate processing apparatus according to another embodiment of the present invention.

4 is a plan view illustrating a measurement pattern structure according to an exemplary embodiment of the present invention.

5 is a plan view illustrating a correction structure according to an embodiment of the present invention.

6A is a plan view illustrating a measurement pattern structure according to another exemplary embodiment of the present invention. 6B is a cross-sectional view taken along the line I-I of FIG. 4A in the azimuth direction.

7A is a cross-sectional view of a measurement pattern structure according to another embodiment of the present invention. FIG. 7B is a diagram showing a virtual spatial distribution of the deposition rate of a substrate when the substrate is processed using the measurement pattern structure of FIG. 7A.

8A is a cross-sectional view illustrating a correction structure according to another embodiment of the present invention. FIG. 8B is a diagram showing a virtual spatial distribution of the deposition rate of a substrate using the correction structure of FIG. 8A.

9A is a perspective view illustrating a measurement pattern structure according to still another embodiment of the present invention. 9B is a top view of FIG. 9A.

FIG. 10 is a diagram illustrating a virtual deposition rate distribution when a deposition process of a substrate is performed using the measurement pattern structure of FIG. 9A.

11A is a perspective view illustrating a correction structure according to another embodiment of the present invention. FIG. 11B is a top view of the correction structure of FIG. 11A.

12 is a perspective view showing a measurement pattern structure according to another embodiment of the present invention.

13 is a perspective view showing a measurement pattern structure according to another embodiment of the present invention.

14 is a perspective view showing a measurement pattern structure according to another embodiment of the present invention.

15 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.

<Brief description of symbols for the main parts of the drawings>

100 ... processing container 110 ... substrate holder

120 Dielectric ... 130 Antenna

140 ... Measurement pattern structure 150 ... Compensation structure

Claims (11)

A measurement pattern having a structure different according to the position is arranged while contacting the upper or lower surface of the dielectric portion (Dielectric) positioned below the antenna electrically connected to the power source to generate the plasma to block the plasma generated below. Including, The measurement pattern structure is arranged in a non-uniform according to the position, to generate a plasma with different energy transfer conditions depending on the position. A measurement pattern including a measurement pattern positioned below the antenna electrically connected to the power source to generate a plasma and in contact with the top or bottom surface of the dielectric portion blocking the plasma generated from below and having a different structure depending on the position; After providing the structure, The substrate is processed using plasma formed by applying power to the antenna, and the optimum process result is selected by irradiating the process result of the substrate according to a position. A correction structure formed by transferring a measurement pattern corresponding to the optimum process result. A substrate holder on which the substrate is mounted; A dielectric part spaced apart from the substrate holder to block a plasma; An antenna electrically connected to a power source to generate a plasma and disposed above the dielectric part; And Including a measurement pattern structure disposed in contact with the upper or lower surface of the dielectric portion, including a measurement pattern having a different structure according to the position, The measurement pattern structure is a substrate processing apparatus for generating a plasma under different energy application conditions depending on the position. The method of claim 3, The measurement pattern structure, Including a first measurement pattern, Wherein the first measurement pattern has a thickness different according to a position, and the measurement pattern is silicon, ceramic, or quartz. The method of claim 3, The measurement pattern structure, A first measurement pattern; And A second measurement pattern disposed on the first measurement pattern, The sum of the thickness of the first measurement pattern and the thickness of the second measurement pattern is constant according to the position. The method according to any one of claims 3 to 5, The dielectric portion, Disc shape, The antenna, Any one of a one-turn antenna, a multi-turn antenna, a spiral antenna, a three-dimensional antenna, a parallel resonant antenna, and a hybrid antenna including a plurality of frequencies, The measurement pattern structure, A substrate processing apparatus characterized by being divided equally into a plurality of circles along the azimuth. A measurement pattern including a measurement pattern positioned below the antenna electrically connected to the power source to generate a plasma and in contact with the top or bottom surface of the dielectric portion blocking the plasma generated from below and having a different structure depending on the position; Providing a structure; Processing the substrate using a plasma formed by applying power to the antenna; Selecting an optimum process result by examining the process result of the substrate according to a position; Transferring a measurement pattern corresponding to the optimum process result to a correction structure; And Processing the substrate using the correction structure. The method of claim 7, The measurement pattern structure, Including a first measurement pattern, And the first measurement pattern has a thickness that varies with position, and the measurement pattern is silicon. The method of claim 7, The measurement pattern structure, A first measurement pattern; And A second measurement pattern disposed on the first measurement pattern, The sum of the thickness of the first measurement pattern and the thickness of the second measurement pattern is constant according to the position. The method of claim 7, The measurement pattern structure, And transfer energy transfer efficiency differently between the upper electrode and the plasma to a position. The method according to any one of claims 7 to 10, The dielectric portion, Disc shape, The antenna, One of a rotating antenna, a multi-rotating antenna, a spiral antenna, a three-dimensional antenna, a parallel resonant antenna, and a hybrid antenna including a plurality of frequencies, The measurement pattern structure, A substrate processing method, characterized in that it is circularly divided into a plurality of parts along the azimuth.

Images