KR20110023799A - A radiating panel using silicon carbide and manufacture method thereof - Google Patents

A radiating panel using silicon carbide and manufacture method thereof Download PDF

Info

Publication number
KR20110023799A
KR20110023799A KR1020100083309A KR20100083309A KR20110023799A KR 20110023799 A KR20110023799 A KR 20110023799A KR 1020100083309 A KR1020100083309 A KR 1020100083309A KR 20100083309 A KR20100083309 A KR 20100083309A KR 20110023799 A KR20110023799 A KR 20110023799A
Authority
KR
South Korea
Prior art keywords
silicon carbide
oxide
heat sink
powder
firing
Prior art date
Application number
KR1020100083309A
Other languages
Korean (ko)
Inventor
박경호
장봉석
조선희
Original Assignee
(주)에스에이치이씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)에스에이치이씨 filed Critical (주)에스에이치이씨
Publication of KR20110023799A publication Critical patent/KR20110023799A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
    • H01L2224/27013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

Abstract

PURPOSE: A heat sink including silicon carbide and a manufacturing method thereof are provided to improve a heat discharge property by coating the surface of a heat sink with carbon. CONSTITUTION: An assembly piece with silicon carbide powder of a grain size of 0.1 to 300 um is made(S110). The assembly piece is formed with one of press, tape casting, and injection molding(S120). The formed assembly piece is sintered at 1000 to 2000 degrees centigrade under an oxidation atmosphere(S130). An inorganic material or carbon with lower melting point than the silicon carbide powder is added to the assembly piece.

Description

Heat sink including silicon carbide and manufacturing method thereof

The present invention relates to a heat sink and a manufacturing method applied to an electronic device such as a CPU, an IC circuit, an inverter, and an LED package.

As a result of the high direct and miniaturization of the semiconductor field and various electronic devices, it is an important task to solve problems such as device malfunction, stoppage, and slowdown caused by an increase in heat generation. In order to solve this problem, conventionally, a single system or a composite is manufactured by using metal materials such as Cu and Al and nonmetal materials such as AlN, SiC, BeO, and Carbon. However, the above materials have excellent thermal conductivity of about 200 W / mK or more, but the high cost of the material itself makes the material expensive and therefore cost-effective when applied to large parts. There was a downside.

In addition, in the case of a single system of metals, heat transfer of a component that generates heat can be maximized. However, since heat dissipation efficiency is low, about 0.3 to 0.5, heat dissipation is difficult, so that a heat dissipation member such as a fan must be provided separately. have.

In addition, the composite heat sink is formed by having a heat absorbing layer and a heat dissipating layer each made of a different material, and has a heavy weight, and a large thermal expansion coefficient causes a problem of injuring other components when used in contact with an electronic component. .

On the other hand, in recent years, as a method of absorbing the heat of a component and easily dissipating it to the outside without having a fan having a relatively light weight and emitting heat, research and development on a single heat sink using a ceramic material, which is a non-metal inorganic material Among the ceramic materials of such single heat sinks, silicon carbide (SiC) materials have relatively high thermal conductivity (160 W / mK or more), and heat dissipation efficiency of about 0.7 to 0.9 is excellent. Therefore, it is easy to absorb and release heat generated from electronic components.

However, the silicon carbide (SiC) material has a problem that the mechanical strength is low enough to be used as a heat sink, and as an attempt to solve this problem, currently at a high temperature of 2,000 ℃ or more in nitrogen, argon, or hydrogen atmosphere A method of improving the mechanical strength of silicon carbide (SiC) single heat sinks has been proposed.

However, when manufactured by the above method, by firing at a high temperature of 2,000 ℃ or more, the mechanical strength of the heat sink can reach a satisfactory level, but the porosity for smooth heat dissipation is reduced, thereby reducing the specific surface area heat release characteristics This deterioration problem has arisen.

In addition, in order to maintain the firing temperature at a high temperature of 2,000 ° C or more, a problem arises in that the manufacturing cost increases by that much.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a heat sink including silicon carbide having good mechanical strength, porosity, and specific surface area characteristics. In particular, the present invention provides a manufacturing method capable of maintaining excellent heat dissipation characteristics while improving mechanical strength of a silicon carbide heat sink, and a heat sink manufactured through the method.

In order to achieve the above object, the heat sink including the silicon carbide according to the present invention is for heat dissipation of electronic components, characterized in that it comprises silicon carbide (SiC) powder (powder).

According to the invention, it characterized in that it further comprises a mineral having a lower melting point than carbon (C) or the silicon carbide powder.

According to the present invention having the above-described configuration, there is an effect to solve the malfunction, stoppage and speed reduction of the device caused by the increase in the amount of heat generated due to the light and simple reduction and high directivity of the electronic device.

In addition, the present invention has the effect of reducing the production cost to a relatively simple manufacturing process.

In addition, the present invention has the effect that it is possible to provide a heat sink including silicon carbide having good mechanical strength, porosity, specific surface area characteristics, and the like.

1 is a flow chart of a press manufacturing process method of the heat sink manufacturing method including silicon carbide according to an embodiment of the present invention.
2 is a schematic perspective view of a heat sink including silicon carbide according to an embodiment of the present invention.
Figure 3 is a flow chart of the tape casting manufacturing process method of the heat sink manufacturing method including silicon carbide according to an embodiment of the present invention.
Figure 4 is a flow chart of the injection molding manufacturing process method of the heat sink manufacturing method including silicon carbide according to an embodiment of the present invention.
5 is a schematic configuration diagram of equipment for heat dissipation characteristics experiment.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a flow chart of a press manufacturing process method of the heat sink manufacturing method including silicon carbide according to an embodiment of the present invention.

As shown in Figure 1, the heat sink manufacturing method using silicon carbide in the press process, first, to form a granulated powder by mixing the silicon carbide powder, the binder, the dispersant, the release agent and the solvent (S110).

At this time, if the particle size of the silicon carbide powder (powder) is too large, it is difficult to express the strength after firing, so problems such as broken and chipping may occur.If the particle size of the silicon carbide powder is too small, Defects may occur. Therefore, the silicon carbide powder is preferably used by mixing the fine powder and granulated powder with each other. Here, the fine powder refers to a powder having a powder size of 0.1 ~ 10㎛, granulated powder refers to a powder of 10 ~ 300㎛ size.

At this time, the granulated powder is based on 100g of the silicon carbide powder, the binder is 1 to 5% by weight of the silicon carbide powder, the dispersing agent is 1 to 2% by weight of the silicon carbide powder, the release agent is 1 to 2% by weight of the silicon carbide powder, And the solvent consists of 40 to 80% by weight of the silicon carbide powder.

Here, the binder includes any one or more of polyvinyl alcohol, polyethylene glycol, wax, and TEG (Triethylene Glycol), and combines the spray-dried silicon carbide powder to maintain the form.

And, the dispersant includes any one or more of ammonium polycarboxylic acid, ammonium polyacrylate, and ammonium hexamethacrylate, and allows the silicon carbide powder to be dispersed in the solvent.

The release agent may include any one or more of stearic acid, microcrystalline wax, polyethylene wax, and calcium stearate, wherein the silicon carbide powder is in the press process. Suppresses attachment to the mold.

The solvent includes distilled water or ion exchanged water and disperses the silicon carbide powder, binder, dispersant, and release agent.

Subsequently, the granulated powder is molded in a mold using a press (S120).

At this time, in the process of forming a mold by using the press, it is formed in a flat plate shape as shown in Fig. 2 (A), or irregularities on the surface of the heat sink containing silicon carbide as shown in Fig. 2 (B) to (D) Or by forming fins or curved surfaces, the surface area is increased.

Finally, the molded granulated powder is fired in an oxidizing atmosphere (S130). In this case, in the case of the ceramic material, the firing process is usually performed at a temperature about 400 to 600 ° C. lower than the melting point of the ceramic material. As the firing temperature increases, the mechanical strength increases, but the porosity tends to decrease.

Since silicon carbide has a melting point of about 2700 ° C, it should generally be fired at a temperature of 2000 ° C. or higher. However, when the silicon carbide is fired at a temperature of 2000 ° C. or higher, the mechanical strength increases, but the porosity decreases. There is a problem of deterioration and an increase in manufacturing cost due to firing at a high temperature. Therefore, in the present embodiment, the firing process is performed at a temperature between 1000 ° C and 2000 ° C. This is because when firing at 1000 ° C. or less, the intergranular strength is low and silicon carbide particles are dropped, which may adversely affect the circuit, and at 2000 ° C. or higher, the heat dissipation property is lowered and the manufacturing cost is too high.

Silicon carbide fired in an oxidizing atmosphere is oxidized to silicon dioxide (SiO2), where silicon dioxide is a material that is not densified during firing and has a large specific surface area on the surface. This is a big advantage in convection and radiation.

In addition, when the surface is roughened using a device such as Sand Blaster, the surface area determined by the shape of the heat sink is maximized as well as the specific surface area of the rough surface, thereby providing excellent heat dissipation characteristics.

In addition, by coating a carbon fiber (carbon fiber) having a high heat dissipation efficiency on the surface of the heat sink including silicon carbide, it is possible to further increase the heat dissipation characteristics.

Figure 3 is a flow chart of the tape casting manufacturing process method of the heat sink manufacturing method including silicon carbide according to an embodiment of the present invention.

As shown in FIG. 3, in the method of manufacturing a heat sink by a tape casting process, first, a silicon carbide powder, a binder, a dispersant, a plasticizer, and a solvent are mixed in a mill to form a slurry (S210). .

At this time, the composition ratio of the slurry is based on 100g of silicon carbide powder, the binder is 5 to 10% by weight of the silicon carbide powder, the dispersant is 1 to 5% by weight of the silicon carbide powder, the plasticizer is 1 to 5% by weight of the silicon carbide powder , And the solvent consists of 50 to 150% by weight of the silicon carbide powder.

Here, the binder includes any one or more of polyvinyl alcohol (PVA), Acrylics, and Methyl Cellulose, and combines tape cast silicon carbide powder to maintain the shape.

Dispersants include any one or more of cyclohexanone, and fish oil, and allow the silicon carbide powerer to be dispersed in the solvent.

Plasticizers include any one or more of Glycerine, Polyethylene Glycol, and Dibutyl Phthalate (DBP) and impart flexibility to tape casting products.

The solvent disperses the silicon carbide powder, binder, dispersant and plasticizer.

In addition, if the particle size of the silicon carbide powder (powder) is too large, it is difficult to express the strength after firing, so problems such as broken and chipping may occur.If the particle size of the silicon carbide powder is too small, Defects may occur. Therefore, the silicon carbide powder is preferably used by mixing the fine powder and granulated powder with each other. Here, the fine powder refers to a powder having a powder size of 0.1 ~ 10㎛, granulated powder refers to a powder of 10 ~ 300㎛ size.

Then, using a slurry to form a silica sheet (Sheet) to dry (S220). At this time, the slurry is injected into the doctor blade to produce a sheet and dried when cutting to complete the molding on the plate, or pass through the grooved roll as shown in Figure 2 (B) to (D) It is cut and molded according to the standard.

Thereafter, the dried silicon carbide sheet is cut and fired at about 1000 to 2000 ° C. in an oxidizing atmosphere (S230), and after firing, the specific surface area can be increased by roughening the surface using a sand blaster as in the previous press process. have.

Figure 4 is a flow chart of the injection molding manufacturing process method of the heat sink manufacturing method including silicon carbide according to an embodiment of the present invention.

As shown in FIG. 4, in the manufacturing process method of manufacturing a heat sink by an injection molding process, first, a silicon carbide powder, an organic binder, and a plasticizer are hot worked and injection molded to form a molded body (S310).

At this time, the molded body is based on 100g of the silicon carbide powder, the organic binder is 5 to 30% by weight of the silicon carbide powder, and the plasticizer is composed of 1 to 15% by weight of the silicon carbide powder.

At this time, since there is no solvent to disperse the silicon carbide powder in the hot working, the silicon carbide powder is dispersed at a high temperature at which the organic binder becomes liquid.

Here, the organic binder includes any one or more of paraffin wax, polypropylene, polyethyrene, epoxy resin, and methyl cellulose, and maintains a shape by combining injection molded silicon carbide powders. It is present in the liquid phase to disperse the silicon carbide powder and plasticizer.

Plasticizers include any one or more of Di-octyl-phthalate (DOP), methyl ketone, vegetable oil, and stearic acid, and provide flexibility to the material during the injection molding process. Facilitate injection.

In addition, if the particle size of the silicon carbide powder (powder) is too large, it is difficult to express the strength after firing, so problems such as broken and chipping may occur.If the particle size of the silicon carbide powder is too small, Defects may occur. Therefore, the silicon carbide powder is preferably used by mixing the fine powder and granulated powder with each other. Here, the fine powder refers to a powder having a powder size of 0.1 ~ 10㎛, granulated powder refers to a powder of 10 ~ 300㎛ size.

Finally, the molded body is subjected to a debinding process for at least 12 hours at 200 to 1000 ° C., and then fired at about 1000 to 2000 ° C. in an oxidizing atmosphere (S320), and after firing, sandblasting is used as in the previous press process. By roughening the surface, the specific surface area can be increased.

Meanwhile, in the above-described embodiment, the firing process is performed at about 1000 ° C. to 2000 ° C. in consideration of the fact that the melting point of silicon carbide is 2700 ° C., the mechanical strength, porosity, heat release characteristics, and manufacturing cost of the heat sink. Proceeded. As such, even if the firing process is performed at 1000 ° C to 2000 ° C, a sufficiently strong mechanical strength may be obtained, but a greater mechanical strength may be required in the heat sink used for some parts. Hereinafter, a method for manufacturing a heat sink and a heat sink including silicon carbide which can obtain greater mechanical strength while maintaining porosity and heat dissipation characteristics will be described.

According to this embodiment, the granulated powder (or slurry and shaped body) including the silicon carbide powder further includes at least one inorganic material that does not evaporate or burn at a high temperature of about 2,000 ° C. while having a lower melting point than silicon carbide. .

In addition, since the melting point of the inorganic material included is lower than silicon carbide, the inorganic material is calcined more than silicon carbide at a firing temperature of 2,000 ℃ or less, and as the inorganic material is calcined, the mechanical strength of the heat sink is further increased. At this time, since the firing temperature is the same as the above-described embodiment, the porosity of the heat sink is maintained at the same level.

On the other hand, such inorganic additives include silicon oxide (SiO 2), aluminum oxide (Al 2 O 3), boron oxide (B 2 O 3), zinc oxide (ZnO), glass powder, alkali oxide, and the like. It is preferable to prepare.

At this time, the content of silicon oxide (SiO 2) in the added inorganic material is preferably added to 0.1 ~ 30wt% or less of silicon carbide (SiC) powder. When the content of silicon oxide (SiO2) added to silicon carbide (SiC) is low, the porosity is similar to that of firing only silicon carbide (SiC) regardless of the firing temperature, but the mechanical strength as a heat sink is insufficient. This is because the porosity tends to decrease as the amount of silicon oxide (SiO 2) is increased, and the porosity is further reduced at higher firing temperatures. That is, when the amount of addition of silicon oxide (SiO 2) is large, the firing of silicon oxide (SiO 2) occurs as the firing temperature increases, thereby removing pores.

In addition, since the aluminum oxide (Al 2 O 3) in the inorganic material also has a melting point lower than silicon carbide (SiC) at 2,050 ° C., the mechanical strength can be improved by properly adding and firing in the granulation powder forming step (S110). Aluminum oxide (Al2O3) has a higher melting point than silicon oxide (SiO2) as described above, and should be fired at a relatively high temperature, but the strength of the material itself is high, so that the mechanical strength can be improved by adding a small amount.

In addition, the content of aluminum oxide (Al 2 O 3) is preferably added to 0.1 to 20wt% or less of silicon carbide (SiC) powder. When the content of aluminum oxide (Al2O3) added to silicon carbide (SiC) powder is relatively low, the porosity is similar to that of firing only with silicon carbide (SiC), but the mechanical strength as a heat sink is insufficient, and aluminum oxide (Al2O3) is insufficient. This is because the mechanical strength tends to decrease even when the content of c) is excessive. This phenomenon is due to the fact that when the content of aluminum oxide (Al 2 O 3) is excessive, some of the added aluminum oxide (Al 2 O 3) is not calcined at a relatively low temperature and thus does not participate in the bonding of silicon carbide (SiC). It is judged that the mechanical strength is lowered.

In addition, since the boron oxide (B 2 O 3) of the inorganic additive has a melting point of 600 ° C. or lower, which is much lower than that of silicon carbide (SiC), the mechanical strength can be improved by adding to the silicon carbide (SiC) powder and baking. And the content of boron oxide (B2O3) is preferably added to 0.1 to 20wt% or less of silicon carbide (SiC) powder.

When the content of boron oxide (B 2 O 3) added to the silicon carbide (SiC) powder is relatively low, the porosity is similar to that of firing only with silicon carbide (SiC), but the mechanical strength as a heat sink is insufficient, and boron oxide ( This is because when the content of B2O3) is excessive, the porosity is lowered than when only silicon carbide (SiC) is fired, and the mechanical strength is only similar to that of only silicon carbide (SiC). This phenomenon causes boron oxide (B 2 O 3), which has a low melting point, to elute onto the surface of the heat sink during the firing process when the boron oxide (B 2 O 3) content is excessive, thereby preventing the silicon carbide (SiC) particles from being properly bonded. Because it becomes.

Therefore, by adding an appropriate amount of boron oxide (B 2 O 3) to the heat sink containing silicon carbide (SiC) and calcining in an oxidizing atmosphere, it has a porosity similar to that of baking in an oxidizing atmosphere with only silicon carbide (SiC). It can be seen that it is possible to manufacture a heat sink having excellent mechanical strength.

On the other hand, when boron oxide (B2O3) is added, the results show that the mechanical strength is almost unchanged according to the firing temperature. This is because no further firing proceeds even if the firing temperature is increased.

In addition, the zinc oxide (ZnO) of the inorganic additive also has a melting point of 1,720 ℃ lower melting point than silicon carbide (SiC) is added to the silicon carbide (SiC) powder to be fired to improve the mechanical strength. And the content of zinc oxide (ZnO) is preferably added 0.1 to 20wt% or less of silicon carbide (SiC) powder.

When the content of zinc oxide (ZnO) added to the silicon carbide (SiC) powder is relatively low, the porosity is similar to that of firing only with silicon carbide (SiC), but the mechanical strength as a heat sink is insufficient, and zinc oxide (ZnO) is insufficient. When the content of c) is too high, the porosity is lowered rather than firing only with silicon carbide (SiC).

In addition, in the case of the glass powder of the inorganic additives, the glass powder melts at a temperature higher than the transition temperature (Tg, Transformation Temperature) and has a characteristic of curing and hardening when the temperature decreases again. Therefore, when the glass powder is mixed with the silicon carbide (SiC) powder and fired at a temperature higher than the glass transition temperature (Tg), the molten glass powder combines the silicon carbide (SiC) powder and when cooled again, the silicon powder is cured. When the glass powder is added to the (SiC) powder, the mechanical strength of the heat sink is improved.

Here, the glass powder is silicon oxide (SiO 2), aluminum oxide (Al 2 O 3), boron oxide (B 2 O 3), zinc oxide (ZnO), zirconium oxide (ZrO 2), lithium oxide (Li 2 O), sodium oxide (Na 2 O), potassium oxide (K2O), lead oxide (PbO), calcium oxide (CaO), magnesium oxide (MgO), copper oxide (CuO), iron oxide (Fe2O3), and cobalt oxide (CoO).

In addition, the content of the glass powder is preferably added 0.1 to 20wt% or less of the silicon carbide (SiC) powder. If the content of glass powder added to silicon carbide (SiC) powder is too small, the porosity is similar to that of firing with silicon carbide (SiC) alone, but the mechanical strength as a heat sink is insufficient, and if the content of glass powder is too high Rather than firing with only silicon carbide (SiC), the porosity is lowered and the mechanical strength is only similar to that of firing only silicon carbide (SiC). This phenomenon is because when an excessive amount of glass powder is added, the glass powder is eluted to the surface of the heat sink at a temperature higher than the glass transition temperature (Tg), thereby preventing the silicon carbide (SiC) particles from being properly bonded.

On the other hand, when the glass powder is added, the results show that the mechanical strength is almost unchanged according to the firing temperature. This means that the glass powder having a very low melting point is already finished at the firing temperature of about 1,000 ° C. This is because firing does not proceed.

In addition, in the case of alkali oxides such as lithium oxide (Li 2 O, melting point: 1,730 ° C.), sodium oxide (Na 2 O, melting point: 920 ° C.), and potassium oxide (K 2 O, melting point: 707 ° C.) of the inorganic additives, ceramic materials It reacts with and lowers the melting point. When the alkali oxide is added to silicon carbide (SiC) powder and fired, the mechanical strength is improved compared to the case where only silicon carbide (SiC) is fired at the same temperature. Can be.

And the content of the alkali oxide is preferably added 0.1 to 10wt% or less of silicon carbide (SiC) powder. When the content of alkali oxide added to the silicon carbide (SiC) powder is too small, the porosity is similar to that of firing only with silicon carbide (SiC), but the reaction with the ceramic material is low, and the mechanical strength of the heat sink is insufficient. If the amount of oxide is too high, rather than the mechanical strength of the heat sink is lowered. This phenomenon is because the excess alkali oxide itself remaining after the reaction with silicon carbide (SiC) is very weak in mechanical strength, resulting in lowering the mechanical strength of the heat sink.

On the other hand, by adding carbon to the granulated powder (or slurry and molded body) containing the silicon carbide powder, not only has a good mechanical strength to be used as a heat sink, but also contains silicon carbide (SiC) having a high porosity. The heat sink can be manufactured.

In the case of carbon, the melting point is very high above 3,000 ° C, but when amorphous carbon is heat-treated, crystallization is made of crystalline carbon, and the strength is increased. Therefore, when the carbon is added to the silicon carbide (SiC) powder and fired, mechanical strength can be improved. In addition, the content of carbon is preferably 0.1 to 30 wt% or less of silicon carbide (SiC) powder.

If the carbon content added to the silicon carbide (SiC) powder is too small, the porosity is similar to that of firing only with silicon carbide (SiC), but the mechanical strength as a heat sink is insufficient, and the carbon content is too high. This is because the higher the mechanical strength than the case of firing only with silicon carbide (SiC), the lower the porosity. This is because excess carbon blocks the pores between the silicon carbide (SiC) powder, thereby reducing the porosity.

In this case, in the case of carbon, the higher the calcination temperature, the better crystallization occurs. Therefore, the calcination at a relatively high calcination temperature is more effective in terms of mechanical strength of the heat sink.

As described in detail above, in the heat sink including the silicon carbide of the present invention, by controlling the particle diameter of the silicon carbide powder, the type and content of the added materials and the minor component crisis in a predetermined range, the porosity is 10% or more and 50% or less The strength is 10kgf / cm 2 or more and 300kgf / cm 2 or less, the thermal conductivity is 10W / mK or more and 100W / mK or less, the density is 2.50g / cm 3 or more and 4.00g / cm 3 or less, and the volume resistivity is 10 4 A heat sink including silicon carbide that satisfies the range of 10 mW / m or more and 10 14 mW / m or less, that is, satisfies both excellent heat dissipation and mechanical properties as a heat sink can be produced.

Hereinafter, the experimental results regarding the heat dissipation characteristics of the heat sink including the silicon carbide manufactured according to the present embodiment will be described.

5 is a schematic configuration diagram of equipment for heat dissipation characteristics experiment.

First, as shown schematically in FIG. 5, the thermal resistance and the surface temperature of the main heater 14 were measured using a TLS-M SOP tester manufactured by Thermolab Co. as an apparatus applying ASTM-5470-06. The standard of the main heater 14 is 20 * 20 mm <2>, and has the thermal characteristics similar to CPU by applying the plate-shaped Cu block 15 made of copper (Cu) material.

The ambient temperature was set to 30 ° C. and the heat generation amount was 5.7 Watt, and the surface temperature of the main heater 14 was 106.39 ° C. and the thermal resistance value was 18.0 ° C./W in the state where the heat sink was not applied (Comparative Example 1). In addition, the thermal tape (13) used for the test used a product of 0.8W / mK (0.25t) of 3M Co.

On the other hand, the smaller the heat resistance value measured using the measuring equipment, the lower the surface temperature of the main heater 14, the better the heat dissipation characteristics of the heat sink is evaluated.

Next, in the granulated powder forming process (S110), the silicon carbide (SiC) powder is granulated silicon carbide (SiC) having 50 wt% of the fine grain silicon carbide (SiC) powder having a particle size of 0.1 to 10 μm and the particle size of 10 to 100 μm. 50 wt% of the powder was mixed, and 1.5 wt% of the organic binder was added to the silicon carbide (SiC) powder, and then a heat sink including silicon carbide (SiC) was manufactured through a molding and baking process.

In Example 1, the firing temperature was 1,600 ° C., and in Example 2, the firing temperature was slightly lowered to 1,450 ° C., except that the remaining conditions were the same as in Examples 1 and 2. In addition, in Example 3, 20 wt% of carbon was added in the granulation powder forming process (S110), and the remaining conditions were prepared in the same manner as in Example 2.

In the case of Example 4 was prepared by coating a carbon (Carbon) excellent in the heat radiation characteristics on the surface of the heat sink prepared in the same manner as in Example 2. At this time, the carbon coating film was prepared by mixing carbon powder such as graphite with carbon ethanol in which phenol resin was dissolved to prepare a slurry, and then applying the spray to the surface of the heat sink.


division
SiC
Amount of particulate
(wt%)

SiC
Amount of granulated particles
(wt%)
Other Mineral Types / Sheep
Organic binder volume
(wt%)
Heatsink specifications
Heat resistance
(℃ / W)
Heater surface
Temperature
(℃)
Remarks
Example 1

50
50
1.5
40 * 40 * 3t
10.83
82.03
1600 ℃
Firing

Example 2
50
50
1.5
40 * 40 * 3t
9.61
77.36
1450 ℃
Firing

Example 3
50
50
Carbon / 20
1.5
40 * 40 * 3t
9.75
77.84
1450 ℃
Firing

Example 4
50
50
1.5
40 * 40 * 3t
9.28
76.02
carbon
coating

Comparative Example 1

18.0
106.39

As shown in Table 1 above, compared to Comparative Example 1 without applying the heat sink, Examples 1 to 4 of the present invention has a low thermal resistance value, and the heater surface temperature is also measured at a low temperature so that the heat dissipation characteristics are large. The improvement was confirmed. In particular, when comparing Examples 1 and 2, it can be seen that the lower the firing temperature is improved heat release effect, because the lower the firing temperature is increased porosity.

In addition, when comparing Examples 2 and 3, it can be seen that the heat release effect is slightly reduced by the porosity decrease due to the addition of carbon to the inside of the heat sink. Compared with Examples 2 and 4, the heat dissipation characteristics of the heat sink were excellent. When carbon is coated, it can be seen that the heat dissipation characteristics are improved and the surface area of the heat sink is increased to improve the heat dissipation effect.

Meanwhile, in Examples 1 to 4, the porosity is 10% or more and 50% or less, the strength is 10kgf / cm 2 or more and 300kgf / cm 2 or less, the thermal conductivity is 10W / mK or more and 100W / mK or less, and the density is 2.50g / cm A heat sink including silicon carbide (SiC) having excellent heat dissipation characteristics and mechanical properties was satisfied, with a range of 3 to 4.00 g / cm 3 and a volume resistivity of 10 4 4m or more and 10 14 Ωm or less.

On the other hand, when artificially roughening the surface of the heat sink manufactured as in Examples 1 to 4 using a machine such as Sand Blaster, the average particle diameter of the silicon carbide (SiC) powder, the type of materials added In addition to the surface area determined by the content and the porosity by the plastic atmosphere, it is possible to maximize the surface area for heat radiation due to the rough surface.

The heat sink according to the embodiment is a CPU, IC circuit and inverter of the display product using the thermal tape, CPU of the set-top box, chip-set, PCB, notebook CPU, chip-set, LED Arrary, lighting, LED lighting It can be used by attaching directly to electronic devices such as automotive high power LED.

Although the preferred embodiments of the present invention have been shown and described above, the present invention is not limited to the specific preferred embodiments described above, and the present invention belongs to the present invention without departing from the gist of the present invention as claimed in the claims. Various modifications can be made by those skilled in the art, and such changes are within the scope of the claims.

11: Printed Circuit Board
12: Guard Heater
13: Thermal Isolated Material
14: Main Heater
15: Cu Block

Claims (23)

For heat dissipation of electronic components,
A heat sink comprising silicon carbide, characterized in that it comprises silicon carbide. The method of claim 1,
A heat sink comprising silicon carbide, characterized in that it further comprises a lower melting point than carbon or the silicon carbide. The method of claim 2,
The carbon content is a heat sink including silicon carbide, characterized in that 0.1wt% ~ 30wt% of the silicon carbide. The method of claim 2,
The mineral is,
A heat sink comprising silicon carbide, characterized in that it comprises at least one of silicon oxide, aluminum oxide, boron oxide, zinc oxide, glass powder, and alkali oxide. The method of claim 4, wherein
The glass powder,
Silicon oxide (SiO2), aluminum oxide (Al2O3), boron oxide (B2O3), zinc oxide (ZnO), zirconium oxide (ZrO2), lithium oxide (Li2O), sodium oxide (Na2O), potassium oxide (K2O), lead oxide A heat sink comprising silicon carbide (PbO), calcium oxide (CaO), magnesium oxide (MgO), copper oxide (CuO), iron oxide (Fe2O3), and cobalt oxide (CoO). The method of claim 4, wherein
The alkali oxide is a heat sink containing silicon carbide, characterized in that composed of at least one of lithium oxide (Li2O), sodium oxide (Na2O) potassium oxide (K2O). The method of claim 4, wherein
The silicon oxide (SiO 2) is a heat sink containing silicon carbide, characterized in that 0.1wt% ~ 30wt% of the silicon carbide. The method of claim 4, wherein
The amount of the aluminum oxide (Al2O3) is a heat sink containing silicon carbide, characterized in that 0.1wt% ~ 20wt% of the silicon carbide. The method of claim 4, wherein
The content of the boron oxide is a heat sink containing silicon carbide, characterized in that 0.1wt% ~ 20wt% of the silicon carbide. The method of claim 4, wherein
The content of the zinc oxide is a heat sink containing silicon carbide, characterized in that 0.1wt% ~ 20wt% of the silicon carbide. The method of claim 4, wherein
The content of the glass powder is a heat sink containing silicon carbide, characterized in that 0.1wt ~ 20wt% of the silicon carbide. The method of claim 4, wherein
The content of the alkali oxide is a heat sink containing silicon carbide, characterized in that 0.1wt% ~ 10wt% of the silicon carbide. The method according to any one of claims 1 to 12,
Heat sink including silicon carbide, characterized in that the irregularities are formed on the surface so as to increase the surface area of the heat sink containing the silicon carbide. The method according to any one of claims 1 to 12,
And a carbon coating film is formed on a surface of the heat sink including the silicon carbide. The method according to any one of claims 1 to 12,
Heat sink containing silicon carbide, characterized in that the porosity is 10% to 50%. The method according to any one of claims 1 to 12,
Strength 10kgf / cm 2 Heat sink with silicon carbide, characterized in that ~ 300kgf / cm 2 . The method according to any one of claims 1 to 12,
A heat sink comprising silicon carbide, characterized in that the particle size of the silicon carbide is 0.1㎛ ~ 300㎛. The method according to any one of claims 1 to 12,
Heat sink containing silicon carbide, characterized in that the thermal conductivity is 10W / mK ~ 100W / mK. The method according to any one of claims 1 to 12,
Heat sink with silicon carbide, characterized in that the density is 2.50g / cm 3 ~ 4.00g / cm 3 . The method according to any one of claims 1 to 12,
A heat sink comprising silicon carbide, characterized by a volume resistivity of 10 4 µm to 10 14 µm. Preparing a granulated powder comprising silicon carbide powder having a particle diameter of 0.1 μm to 300 μm;
Molding the manufactured granulated powder by any one of a press, tape casting, and injection molding method; And
Firing the molded granulated powder in an oxidizing atmosphere; a method of manufacturing a heat sink comprising silicon carbide, comprising: a. The method of claim 21,
The granulated powder is further added to inorganic or carbon having a lower melting point than the silicon carbide powder,
In the step of firing, the manufacturing method of the heat sink including silicon carbide, characterized in that for firing the granulated powder at 1000 ~ 2000 ℃. The method of claim 22,
The mineral is,
A method for producing a heat sink comprising silicon carbide, characterized in that it comprises at least one of silicon oxide (SiO 2), aluminum oxide, boron oxide, zinc oxide, glass powder, and alkali oxide.
KR1020100083309A 2009-08-31 2010-08-27 A radiating panel using silicon carbide and manufacture method thereof KR20110023799A (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR20090080911 2009-08-31
KR1020090080911 2009-08-31
KR1020100046953 2010-05-19
KR20100046953 2010-05-19
KR20100060199 2010-06-24
KR1020100060199 2010-06-24

Publications (1)

Publication Number Publication Date
KR20110023799A true KR20110023799A (en) 2011-03-08

Family

ID=43628625

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100083309A KR20110023799A (en) 2009-08-31 2010-08-27 A radiating panel using silicon carbide and manufacture method thereof

Country Status (3)

Country Link
KR (1) KR20110023799A (en)
TW (1) TW201120394A (en)
WO (1) WO2011025299A2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101430677B1 (en) * 2013-02-18 2014-08-18 주식회사 코센테크 A composite material for heat sink
KR101457181B1 (en) * 2013-01-28 2014-11-03 김정석 Improved heat conductivity and emissivity ceramic substrate for heat dissipation and method for manufacturing the same
WO2015093825A1 (en) * 2013-12-16 2015-06-25 부산대학교 산학협력단 High-heat dissipation ceramic composite, method for manufacturing same, and use thereof

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012119671A (en) 2010-11-11 2012-06-21 Kitagawa Ind Co Ltd Electronic circuit and heat sink
TWI491085B (en) * 2012-06-06 2015-07-01 Pin Siang Wang Complex heat dissipater and manufacturing method thereof
CN104103741A (en) * 2014-07-02 2014-10-15 柳钊 Integrally packaged LED (Light-Emitting Diode) light source device taking silicon carbide ceramic as radiator, and preparation method of LED light source device
CN111592275A (en) * 2020-06-29 2020-08-28 广州视源电子科技股份有限公司 Radiator and preparation method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1030148A (en) * 1996-07-17 1998-02-03 Injietsukusu:Kk Heat sink and its manufacture
US6771502B2 (en) * 2002-06-28 2004-08-03 Advanced Energy Technology Inc. Heat sink made from longer and shorter graphite sheets
US6749010B2 (en) * 2002-06-28 2004-06-15 Advanced Energy Technology Inc. Composite heat sink with metal base and graphite fins
JP2004363309A (en) * 2003-06-04 2004-12-24 Ceramission Kk Semiconductor component exhibiting excellent heat dissipation
JP2007238906A (en) * 2006-03-06 2007-09-20 Tomoaki Nakamura Heat dissipation material and heat dissipation material paint

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101457181B1 (en) * 2013-01-28 2014-11-03 김정석 Improved heat conductivity and emissivity ceramic substrate for heat dissipation and method for manufacturing the same
KR101430677B1 (en) * 2013-02-18 2014-08-18 주식회사 코센테크 A composite material for heat sink
WO2015093825A1 (en) * 2013-12-16 2015-06-25 부산대학교 산학협력단 High-heat dissipation ceramic composite, method for manufacturing same, and use thereof

Also Published As

Publication number Publication date
TW201120394A (en) 2011-06-16
WO2011025299A2 (en) 2011-03-03
WO2011025299A3 (en) 2011-07-07

Similar Documents

Publication Publication Date Title
KR20110023799A (en) A radiating panel using silicon carbide and manufacture method thereof
KR100353387B1 (en) Aluminum Nitride Sintered Body and Method of Preparing the Same
US8268437B2 (en) Method for producing ceramic sheet, ceramic substrate using ceramic sheet obtained by such method, and use thereof
CN109836141B (en) High-thermal-conductivity low-temperature co-fired ceramic material and preparation method thereof
JPWO2011096126A1 (en) Light emitting element mounting substrate and light emitting device
CN102531396B (en) Low-temperature co-fired glass ceramic composites and preparation method thereof
CN113213894A (en) High-purity alumina ceramic substrate and preparation process thereof
KR101579912B1 (en) Method of manufacturing a graphite-aluminum compound and use thereof
CN113185268B (en) Preparation method of alumina ceramic material and alumina ceramic substrate
JP7282279B1 (en) Method for manufacturing boron nitride sintered body and boron nitride sintered body
KR101726245B1 (en) Alumina ceramics composition having low sintering temperature and manufacturing process thereof
KR101901172B1 (en) High thermal conductive silicon nitride ceramics substrate with excellent electric isolation
CN103395993B (en) A kind of aluminum-nitride-based glass-ceramic and preparation method thereof
TWI784286B (en) Glass powder, dielectric material, sintered body, and high-frequency circuit components
JP2014148452A (en) Glass ceramic for light emitting diode package, ceramic substrate using the same, and light emitting diode package
KR101742063B1 (en) Silicon Carbide Heatsink and Manufacturing Method Thereof
KR101215120B1 (en) Glass-ceramics for led package and manufacturing method of the same
KR101668685B1 (en) Glass free MgO ceramic compounds for low temperature co-fired ceramics and MgO ceramics
JPH02221162A (en) Production of aluminum nitride-based sintered body
JP7322323B1 (en) Boron nitride sintered body and composite
JP3572692B2 (en) α-Alumina powder-containing resin composition and rubber composition
KR101131489B1 (en) Multifunctional electromagnetic wave absorption sheet simultaneouly with excellent electromagnetic wave absorption and thermal dissipation, and method of making the same
CN116120046B (en) High-reflectivity alumina ceramic substrate, preparation method and application
JP3925077B2 (en) GLASS CERAMIC, PROCESS FOR PRODUCING THE SAME, AND COMPOSITION FOR GLASS CERAMIC
JPH03218977A (en) Production of aluminum nitride sintered body

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application