KR20110023792A - Method for using a dummy substrate - Google Patents

Abstract

PURPOSE: A method for using a dummy substrate is provided to suppress the bending of the dummy substrate by making a transfer schedule of the corresponding dummy substrate with regard to a process chamber based on a process schedule. CONSTITUTION: A film formation history about a plurality of dummy substrates is made by a computer(6) based on a process recipe which is executed on a process chamber. The film formation history includes a kind of films and a film thickness. The curvature of the dummy substrate is obtained by the computer based on curvature data(66) and the film formation history of the dummy substrate. A transfer schedule about a process chamber is made based on the process schedule, the curvature data, and the curvature of the dummy substrate.

Description

How to use dummy boards {METHOD FOR USING A DUMMY SUBSTRATE}

The present invention relates to a method of using a dummy substrate in a substrate processing apparatus.

 In the manufacturing process of a semiconductor device, the film-forming process by CVD (chemical vapor deposition) or PVD (physical vapor deposition) may be performed to a board | substrate, for example, a wafer, These processes are multiple, for example in a common conveyance chamber. It implements using the semiconductor manufacturing apparatus which is a system provided with a film-forming process module.

By the way, in this semiconductor manufacturing apparatus, in order to perform the stable film-forming process to the wafer used as a product (it is called a product wafer), the dummy wafer which is a test wafer is first conveyed to the film-forming module, and a film-forming process is performed to the dummy wafer. Is executed. Thereafter, the lot of the product wafer is conveyed to the film forming module, and the film forming process may be performed on the product wafer. By carrying out the operation of the dummy wafer in this manner, the atmosphere in the processing container constituting the module can be stabilized before the processing is performed on the product wafer. As described above, dummy wafers are also used when various experiments are carried out in the development stage as well as before processing the product wafers, and film forming processing is performed on the dummy wafers to analyze film quality, in-plane distribution of film thickness, and the like. As a result, determination of an appropriate value of each parameter of the film forming module, improvement of hardware, and the like are performed.

The dummy wafer is repeatedly formed into a film, whereby a film is laminated on the surface thereof. However, when the films are stacked, stress is applied to the dummy wafer due to the crystallinity or the like of the film, and the dummy wafer is bent. The periphery is bent to be higher than the central portion, or the central portion is bent to be higher than the periphery, depending on the type of film being formed, but as the accumulated film thickness of the same type of film is increased, a large stress is applied to the dummy wafer in the same direction, so that the amount of warpage is increased. do.

As described above, when the amount of warpage of the dummy wafer increases, the entire surface of the dummy wafer is not uniformly adsorbed to the electrostatic chuck, for example, by holding and holding the wafer in each module. In this case, the film forming gas is turned on the back surface of the dummy wafer in the film forming module which performs CVD, and the atoms supplied from the target are turned in by the film forming module which performs PVD. In this way, when the film forming gas or atoms enter the back surface of the dummy wafer, the film is formed on the back surface, so that particles are generated or the temperature of the electrostatic chuck becomes unstable. As a result, the processing of the product wafer may be affected or the experiment may not be executed normally. Further, when the degree of warpage increases, an excessively large force is applied at the time of adsorption, and the dummy wafer may be damaged.

In order to suppress the inconvenience of adsorption to the electrostatic chuck, a limit on the number of times of use is usually set on the dummy wafer, and the number of times that the number of times of use reaches the limit is discarded. The limit on the number of times of use is a fixed value determined by the result of a preliminary experiment of measuring the amount of curvature (curvature) when a predetermined film is successively laminated on a dummy wafer. However, if the film is laminated with a different film type or a different film thickness than the film formed by the preliminary experiment, or when a plurality of types of films are laminated, the amount of warpage is still small when the number of times of use of the dummy wafer reaches the limit value, Can form a larger number of films, which sometimes destroys the dummy wafer. For this reason, an operation method capable of suppressing the amount of warpage of the dummy wafer has been demanded for a system provided with a film formation module. In addition, Patent Literature 1 describes that a film is formed on a dummy wafer for the purpose of performing a process using a dummy wafer to stabilize the processing of the device after the start of the device, or for testing a film deposited on a product wafer. The above problems and their solutions are not described.

Japanese Patent Laid-Open No. 1997-143674 (paragraphs 0008, 0013, 0039)

The present invention has been made under such circumstances, and an object thereof is to provide a method of using a dummy substrate in a substrate processing apparatus capable of suppressing warpage of the dummy substrate.

In the method of using the dummy substrate of the present invention, in the method of using a dummy substrate in the substrate processing apparatus in which a plurality of process chambers for performing a film forming process on the substrate are connected to the substrate transfer chamber,

Taking out the dummy substrate from the dummy substrate storage part, carrying it into the process chamber via the substrate transfer chamber, and performing a film forming process;

For each of the plurality of dummy substrates stored in the dummy substrate storage unit, a process of creating a film formation history by a computer, including the type and film thickness of the formed film, based on the process recipe executed in the process chamber;

A step of calculating the curvature of the dummy substrate by a computer based on the curvature data corresponding to the film thickness and the curvature change of the substrate due to film formation for each type of film, and based on the curvature data and the film formation history of the dummy substrate;

Based on the curvature of the dummy substrate obtained in this step, the curvature data, and the process schedule including the film type and film thickness of the film forming process scheduled in the process chamber, the curvature of the dummy substrate is suppressed so as to be suppressed. It is characterized by including the process of preparing the conveyance schedule of the said dummy board | substrate.

Moreover, the usage method of the dummy substrate of another invention is a usage method of the dummy substrate in the substrate processing apparatus in which the several process chamber which performs film-forming process with respect to a board | substrate is connected to the board | substrate conveyance chamber,

Taking out the dummy substrate from the dummy substrate storage part, carrying it into the process chamber via the substrate transfer chamber, and performing a film forming process;

Carrying out a plurality of dummy substrates stored in the dummy substrate storage unit into an alignment chamber for adjusting the direction of the dummy substrate, and obtaining a curvature for each of the plurality of dummy substrates by a bending detector;

Based on the curvature of the dummy substrate obtained in this process and the process schedule including the type of film for the film formation process scheduled in the process chamber, the transfer schedule of the dummy substrate to the process chamber is suppressed so that the warp of the dummy substrate is suppressed. It is characterized by including the process of making. In this case, instead of carrying in the alignment chamber with respect to the some dummy board | substrate stored in the said board | substrate storage part, and obtaining curvature by the bending detector with respect to each of the said some dummy board | substrate, the type of the film formed into each dummy board | substrate was formed. The curvature may be calculated by a computer based on the film formation history including the film thickness and the film thickness, and the curvature data corresponding to the film thickness and the curvature change of the substrate due to film formation for each film type. The film thickness of the film may be included.

The operator schedules the transfer schedule of the dummy substrate, for example, and the curvature data is displayed on the display of the computer, for example. The transfer schedule of the dummy substrate may be created by a computer by a program.

According to the present invention, a process including curvature of a dummy substrate, curvature data corresponding to the film thickness and the curvature change of the substrate due to film formation for each film type, and the type and film thickness of the film of the film forming process scheduled in the process chamber. Based on the schedule, the transfer schedule of the dummy substrate for the process chamber is created. Therefore, the warpage of the dummy substrate can be suppressed. Moreover, according to another invention, the transfer schedule of the dummy substrate with respect to a process chamber is created based on the curvature of a dummy board | substrate and the process schedule containing the kind of film | membrane of the film-forming process scheduled in the said process chamber. Therefore, the warpage of the dummy substrate can be suppressed. By suppressing the warp in this manner, it is possible to prevent the occurrence of inconvenience caused by the dummy substrate not being adsorbed to the stage such as the electrostatic chuck.

1 is a plan view of a semiconductor manufacturing apparatus which is a substrate processing apparatus used in the present invention;
2 is a graph of experimental results showing a change in curvature of a wafer due to a change in film thickness of a Cu film and a Ti film;
3 is an explanatory diagram showing how a wafer is changed by a Cu film and a Ti film;
4 is a longitudinal side view of a film forming module provided in the semiconductor manufacturing apparatus;
5 is a configuration diagram of a control unit provided in the semiconductor manufacturing apparatus;
6 is an explanatory diagram showing an example of input to a setting area of the display unit;
7 is a process chart showing how the warpage amount of a wafer changes;
8 is a longitudinal side view of a module for measuring an amount of warpage provided in the semiconductor manufacturing apparatus;
9 is a cross-sectional plan view of the module for measuring the amount of warpage;
10 is a configuration diagram of another control unit provided in the semiconductor manufacturing apparatus;
11 is a graph showing the relationship between the number of deposition of a wafer and the change in the radius of the wafer;

(1st embodiment)

Although the use method of the dummy substrate in a substrate processing apparatus which concerns on embodiment of this invention is demonstrated below, FIG. 1 is shown about the structure of the semiconductor manufacturing apparatus 1 which is a substrate processing apparatus used for this method first. Explain while referring. The semiconductor manufacturing apparatus 1 is the 1st conveyance chamber 11 which comprises the loader module which loads and unloads the wafer W, the load lock chambers 12 and 13, and the 2nd conveyance which is a vacuum conveyance chamber module. The chamber 14 is provided. In the front of the 1st conveyance chamber 11, the mounting base 15 in which the carrier C which accommodates 25 wafers W is mounted is provided, for example. The wafer W referred to herein is a dummy wafer (dummy substrate) described in the background art unless otherwise stated. The wafers W are stacked and arranged on the carrier C vertically. The wafer W carried into the semiconductor manufacturing apparatus 1 is an unused new article, and it is assumed that the wafer W is not warped at the time of carrying in.

The front door of the 1st conveyance chamber 11 is provided with the gate door GT which the said carrier C is connected and opens and closes integrally with the cover of the carrier C. As shown in FIG. And in the 2nd conveyance chamber 14, the Cu film-forming module 3 which forms Cu (copper) into the wafer W, and the Ti film-forming module 5 which forms Ti (titanium) into the wafer W are airtight. Is connected.

Here, the outline | summary of the process of the semiconductor device 1 in this 1st Embodiment is demonstrated. The plots in the graph of FIG. 2 are data obtained by experiments, and the curvature change (change in the amount of warpage) and the plurality of wafers of the respective wafers W, when Cu having different film thicknesses are formed on the plurality of wafers W, respectively. The curvature change of each wafer W at the time of depositing Ti of different film thickness in (W) is shown. As shown in the graph data, the wafers W are bent in opposite directions when Cu is formed and when Ti is formed. When Cu was formed, as shown in FIG. 3 (a), it was bent downwardly (the central portion of the wafer W is located below the periphery), and when Ti was formed, as shown in FIG. 3 (b). As shown above, the central portion of the wafer W is bent upward with respect to the peripheral edge portion. As can be seen from the graph of Fig. 2, the larger the cumulative film thickness for each film, the larger the change in curvature of the wafer W. Since the curvature change corresponds to the stress applied to the wafer W, the larger the integrated film thickness of each film, the larger the stress applied to the wafer W.

Therefore, in the case where the wafer W in which the film is not formed is flat (a state without warping), the Cu film having the film thickness giving the curvature change (+ a) and the Ti film having the film thickness giving the curvature change (-a) are used. When laminated on (W), the curvature change by each film becomes (+ a) + (-a) = 0, and the stresses applied to the wafer W by each of the Cu film and the Ti film are removed from each other, and the wafer ( W) becomes flat as shown to Fig.3 (c). By using this, in this semiconductor manufacturing apparatus 1, the mode which sets an conveyance path | route for an operator to make the wafer W flat based on the curvature of the wafer W as mentioned later is performed. In addition, the curvature of the wafer W is the wafer W when the height of the circumferential edge part seen from the center of the wafer W shown to Fig.3 (a) is flat as shown to L1 and FIG.3 (c). It is a value calculated | required by L1 / L2 when the diameter of) is set to L2.

Returning to FIG. 1, description of the semiconductor manufacturing apparatus 1 is continued. The alignment chamber 2 is provided in the side surface of the 1st conveyance chamber 11. The alignment chamber 2 has a rotation drive mechanism for rotating the wafer W around the vertical axis, as will be described later, and the wafer W is provided such that the notch formed at the periphery of the wafer W faces a predetermined direction. It has a role to adjust the direction of. And the wafer W in which the direction was adjusted is received at the predetermined position of the 1st conveyance means 16 provided in the 1st conveyance chamber 11, and eccentricity adjustment is performed. The load lock chambers 12 and 13 are provided with the vacuum pump and the leak valve which are not shown in figure, and are comprised so that an atmospheric atmosphere and a vacuum atmosphere may be changed. That is, since the atmosphere of the 1st conveyance chamber 11 and the 2nd conveyance chamber 14 is hold | maintained in an atmospheric atmosphere and a vacuum atmosphere, respectively, the load lock chambers 12 and 13 are made of a wafer ( It is for adjusting an atmosphere when conveying W). In the drawing, reference numeral G denotes between the load lock chambers 12 and 13 and the first transfer chamber 11 or the second transfer chamber 14, or the second transfer chamber 14 and the Cu film forming module ( 3) or a gate valve (compartment valve) which partitions between the Ti film-forming modules 5.

The 1st conveyance means 16 and the 2nd conveyance means 17 are provided in the 1st conveyance chamber 11 and the 2nd conveyance chamber 14, respectively. The first conveying means 16 is a multi-joint apparatus for carrying the wafer W between the carrier C and the load lock chambers 12 and 13 and between the first conveying chamber 11 and the alignment chamber 2. It is a conveying arm. The second conveying means 17 is a multi-joint conveying arm for carrying out the transfer of the wafer W between the load lock chambers 12, 13, the Cu film forming module 3, and the Ti film forming module 5.

Next, Cu film-forming module 3 is demonstrated. This Cu film forming module 3 is a module for forming Cu film by CVD and includes a processing container 30. In the processing container 30, a stage 31 for mounting the wafer W horizontally is provided, and the surface of the stage 31 is configured as an electrostatic chuck for electrostatically adsorbing the wafer W. . In the stage 31, the heater 31a which forms the temperature adjusting means of the wafer W is provided. In addition, the stage 31 is provided with three lifting pins 32 (only two of which are shown for convenience) that can be lifted and lowered by the lifting mechanism 33. The second conveying means ( The transfer of the wafer W is performed between the 17 and the stage 31.

One end of the exhaust pipe 34 is connected to the bottom of the processing container 30, and the vacuum pump 36 is connected to the other end of the exhaust pipe 34 via a pressure control valve 35. The pressure control valve 35 controls the exhaust conductance of the exhaust pipe 34 to control the pressure in the processing vessel 30. Moreover, the conveyance port 37 which opens and closes by the gate valve G is formed in the side wall of the processing container 30. As shown in FIG.

In addition, the gas shower head 41 is provided on the ceiling of the processing container 30 so as to face the stage 31. The gas shower head 41 has a gas chamber 42 and a gas supply hole 43, and the gas supplied to the gas chamber 42 is supplied into the processing container 30 from the gas supply hole 43. The gas chamber 42 is connected to a film forming gas supply means 44 including a valve, a mass flow controller, a supply source of the film forming gas, and the like via the gas supply passage 43.

At the time of the film forming process, the inside of the processing container 30 is exhausted at a predetermined pressure, and the film forming gas is supplied from the film forming gas supply means 44 with the wafer W placed on the stage 31 heated. It is supplied to (W), and Cu is formed into a film in the wafer (W). About the Ti film-forming module 5, it is comprised like the Cu film-forming module 3 except the kind of film-forming gas supplied to the wafer W being different.

Subsequently, the control unit 6 will be described with reference to FIG. 5 showing the configuration thereof. The control unit 6 is made of, for example, a computer, and includes a bus 61, a CPU 62, a first memory 63, and a program 64. In the program 64, a command (each step) is issued to send a control signal from the control part 6 to each part of the semiconductor manufacturing apparatus 1, and to advance each process process mentioned later. In addition, for example, the first memory 63 includes an area in which processing parameter values such as processing temperature, processing time, supply amount of each gas, or power value are written, and when the CPU executes each instruction of the program 64. Such processing parameters are read out and control signals corresponding to the parameter values are sent to the respective parts of the semiconductor manufacturing apparatus 1. The program 64 (including a program related to manipulating or displaying a processing parameter) is stored in a storage medium such as a flexible disk, a compact disk, a hard disk, an MO (optical magnetic disk), a memory card, and the like. It is installed in the program storage part 65 of 6). In FIG. 5, reference numeral 60 denotes a recipe setting unit, which stores a recipe (a time series group of process conditions such as pressure and temperature) of a film forming process performed on the wafer W, and selects a film forming recipe. The screen is included.

Reference numeral 66 denotes curvature data of the wafer W. The ID of the film forming recipe, the film thickness of the film formed in each film forming module when the recipe is executed, and the curvature change of the wafer W are changed. Data corresponding to each other. In addition, although this curvature data is stored in the memory, the code | symbol 66 is attached | subjected to the curvature data for convenience. The relationship between the film thickness and curvature change corresponding to each recipe is defined based on the experimental results described in FIG. 2, and the film thickness and curvature change of each film formed on the wafer W are proportional to each other from the plot of the graph of FIG. 2. It is assumed that this correspondence is defined, and this correspondence is defined. For example, the thickness of the deposition of the Cu 1.5㎛, 3.0㎛, and 4.5㎛ the change in curvature of the wafer ^{(W) + 0.002m -1, +} 0.004m -1, + 0.006m -1 when, for film formation of Ti is the change in curvature of the wafer (W) when the film thickness of one ^{1.8㎛, 3.7㎛, 5.5㎛ -0.002m -1,} -0.004m -1, -0.006m -1.

Reference numeral 67 in FIG. 5 denotes a conveyance mode setting section of the wafer W, for selecting one of a normal conveyance mode and a warpage correction mode. The normal conveyance mode is a mode in which the wafers W held on the holding shelf of the carrier C are taken out in order from the top, for example, and transported so as to execute the film forming process in that order. For example, if the film forming process is performed alternately between the film forming module 3 and the film forming module 5 in the two film forming modules, the wafer W1 is loaded into the film forming module 3 and the next wafer W2 is loaded. It carries into the film-forming module 5, and also becomes a conveyance mode which carries in the next wafer W3 to the film-forming module 3. In addition, the warpage correction mode transfers the wafer W to the film formation module in the normal transfer mode to execute the processing, and according to the warpage amount (curvature) of the wafer W determined by the program 64 at a predetermined time point. It is a mode in which an operator sets a conveyance path. Specifically, this conveyance mode setting unit 67 includes a display screen for selecting a conveyance mode, a keyboard and a mouse, a program for executing a normal conveyance mode, and a program for executing a warpage correction mode. The setting of the warping correction mode is executed based on a screen for setting the loading order of the film forming module for each wafer W while the operator looks at the screen, for example.

In addition, a second memory 68 is connected to the bus 61. In the second memory 68, the ID (identification number) of the wafer W, the integrated film thickness of Cu formed on the wafer W, the integrated film thickness of Ti formed on the wafer W, and the wafer W ) Is stored in correspondence with each other. The ID of this wafer W is that when the carrier C is carried in the semiconductor manufacturing apparatus 1, the program 64 arranges the wafer W in the carrier C for each carrier C. Will be assigned accordingly. Moreover, after each wafer W is conveyed from the carrier C, it is returned to the same position of the same carrier C, and the correspondence of assigned ID and the wafer W is prevented from shift | deviating. And as mentioned above, since the wafer W is flat at the time of carrying in the semiconductor manufacturing apparatus 1, the curvature of the wafer W memorize | stored in the 2nd memory 68 corresponds to the integrated film thickness of Cu. It is a total value of the curvature change and the curvature change corresponding to the integrated film thickness of Ti. Each time the film forming process is performed on the wafer W, the program 64 updates the values for the integrated film thickness of Cu or the integrated film thickness of Ti and the curvature of the wafer W stored in the second memory 68. .

Reference numeral 71 denotes a display portion formed of a liquid crystal panel or the like, and the above-described curvature data 66 and the like are displayed. In addition, although the display part 71 and the conveyance mode setting part 67 are divided and displayed in FIG. 5, a part of the screen of the display part 71 is contained in the conveyance mode setting part 67. As shown in FIG. The display portion 71 displays the integrated film thickness of each film and the curvature of the wafer W stored in the second memory 68.

Subsequently, the operation of the apparatus including the method of using the dummy wafer will be described with respect to the case where the device maker uses the semiconductor manufacturing apparatus 1 to perform the task of examining or improving the device performance. First, the carrier C in which the plurality of wafers W are stored is conveyed to the semiconductor manufacturing apparatus 1, mounted on the mounting table 15, and connected to the first transport chamber 11. The program 64 then assigns an ID to each wafer W in the carrier C, and compares the Cu integrated film thickness, Ti integrated film thickness, and curvature of the wafer W with such a wafer W. FIG. Each of the second memories 68 is stored as zero.

On the other hand, the operator sets the conveyance mode of the wafer W to the normal conveyance mode by the conveyance mode setting part 67, and sets the recipe of the film-forming process in each film-forming module 3,5. This recipe is set by selecting the ID of the recipe displayed on the screen. By setting the normal conveyance mode as the conveyance mode, the wafer W is carried out from the carrier C in the arrangement order in the carrier C, and the film forming modules 3 and 5 alternately as described above, for example. It is conveyed and returned to the carrier C after receiving a process by the film-forming module before conveyance. For example, when the last wafer W in the carrier C is carried out, it is carried out repeatedly in order from the wafer W carried out from the first said carrier C continuously.

After the transfer mode and the recipe are set, when the operator executes a predetermined process by the transfer mode setting unit 67, the cover of the gate door GT and the carrier C is opened at the same time, so that the wafer in the carrier C ( W is carried in to the 1st conveyance chamber 11 by the 1st conveyance means 16 in the arrangement order. Thereafter, the wafer W is conveyed to the alignment chamber 2, and after the adjustment of the direction and the eccentricity is carried out, the gate valve G is conveyed to the load lock chamber 12 held in the atmospheric atmosphere. When the gate valve G is closed and the pressure of this load lock chamber 12 is adjusted and the room becomes a vacuum atmosphere, the gate valve G is opened, and the 2nd conveyance chamber 14 is carried out by the 2nd conveyance means 17. FIG. Imported into).

Subsequently, the second conveying means 17 conveys the wafers W to the film forming modules 3 and 5 alternately. The wafer W conveyed to the Cu film-forming module 3 receives a film-forming process by the set recipe, Cu film | membrane is formed into a film thickness according to the recipe, and the curvature change corresponding to the film thickness arises. And the program 64 updates the numerical value of the integrated film thickness of Cu and the curvature of the wafer W stored in the 2nd memory 68 from zero to the value corresponding to the said recipe.

In addition, the wafer W conveyed to the Ti film-forming module 5 is processed by the set recipe, and a Ti film is formed into a film by the film thickness according to the recipe. And the curvature of the wafer W changes by the quantity corresponding to the film thickness. The program 64 updates the numerical value of the integrated film thickness of Ti and the numerical value of the curvature of the wafer W stored in the second memory 68 to values corresponding to the recipe executed from zero. In this way, when the processing is performed on the wafer W and the data of the second memory 68 is updated, the display corresponding to that of the display unit 71 also changes.

After the film-forming process in each film-forming module, the wafer W is taken out from the said Ti film-forming module 5 by the 2nd conveying means 17, and conveyed to the load lock chamber 13, and then the 1st conveying means 16 is carried out. Is returned to the carrier (C). As described above, the wafer W returned to the carrier C is repeatedly conveyed in the same path and subjected to processing. And every time the wafer W is processed by the Cu film-forming module 3, the value of the Cu integrated film thickness of the said wafer W memorize | stored in the 2nd memory 68, and the value of the curvature of the wafer W are shown. The values of the film thickness and the curvature change corresponding to the recipes respectively set are added to each other, and the values of these Cu integrated film thicknesses and the values of the curvature of the wafer W are updated.

In addition, each time the wafer W is processed by the Ti film-forming module 5, recipes set to the values of the Ti integrated film thickness stored in the second memory 68 and the curvature of the wafer W are respectively set. The values of the film thickness and the value of the curvature change corresponding to s are added, respectively, and the values of these Ti integrated film thicknesses and the values of the curvature of the wafer W are updated. As the data of the second memory 68 is updated, the display corresponding to that of the display unit 71 also changes.

When the operator executes a predetermined operation from the transfer mode setting unit 67 at an arbitrary timing, the transfer of the wafer W from the carrier C stops and is carried out from the carrier C to the semiconductor manufacturing apparatus 1. The wafer W is returned to the carrier C, and the conveyance mode stops normally. Subsequently, the operator sets the conveyance by the warpage correction mode from the conveyance mode setting section 67 to the wafer W having a large curvature while watching the display portion 71. Then, by selecting the IDs of the recipes displayed on the screen as in the normal conveyance mode execution, the deposition recipes in each of the deposition modules 3 and 5 are set, and the curvature data 66 displayed on the display section 71 is set. Based on the curvature change of the wafer W by the film-forming recipe shown and the said curvature, the order of carrying into each film-forming module is determined. Specifically, this carry-in order is set so that the sum total of the curvature change by the set film-forming recipe and the curvature of the wafer W may become zero or about zero.

6 shows an example of the display of the display unit 71 in a state where the film forming recipe and the transport path are set. For the wafer (A1) shown in Figure 6, the curvature after the normal transfer mode ends -0.011m ^-1 and the three film-forming process of Cu film formation module 3 recipe No.2 of curvature changes from ^-1 + 0.004m After execution, the recipe No. with the curvature change of -0.001m ^-1 in the Ti film-forming module 5 was carried out. The film formation process is set to C1. As a result, the curvature of the wafer A1 after curvature correction is -0.011 + 0.004 + 0.004 + 0.004-0.001 = 0.000 m ^-1 .

Further, Fig for the wafer (A2) shown in Fig. 6, the normal conveying mode, the curvature after termination + 0.005m ^-1 and the change in curvature is -0.006m ^-1 recipe from Ti film formation module (5) No. After the film-forming process to C4, Cu film-forming module 3, the curvature change is + ^-1 0.001m in the recipe No. It is set to 4 to form a film forming process. As a result, the curvature of the wafer A2 after curvature correction is +0.005-0.006 + 0.001 = 0.000 m ^-1 . In addition, about wafer A3 of FIG. 6, the curvature after completion | finish of conveyance mode is + 0.013m <^-1> , and recipe No. whose curvature change is -0.006m <^-1> in Ti film-forming module 5 is shown. Recipe No. 2 having a curvature change of -0.001 m ^-1 after two film-forming treatments with C4. The film formation process is set to C1. As a result, the curvature of the wafer A3 after curvature correction is +0.013-0.006-0.006-0.001 = 0.000 m ^-1 .

After the recipe and the conveyance path are set as described above, if the operator executes a predetermined operation from the conveyance mode setting section 67, the warpage correction mode is executed, and the wafer W is set to execute conveyance in the warpage correction mode. Is carried out from carrier C in the arrangement order in carrier C only, and is conveyed to the 2nd conveyance chamber 14 by the same path | route at the time of normal conveyance mode execution. And the wafer W conveyed to the 2nd conveyance chamber 14 is conveyed to the film-forming module in the set order, and Cu or Ti is formed into a film by the film thickness according to the set recipe. Even when this warping correction mode is executed, the cumulative film thickness and curvature change of Cu and Ti stored in the second memory 68 as in the normal conveyance mode execution are updated each time the film forming process is executed, and the display unit ( The display of 71 changes.

Specifically, a state in which the wafer A1 shown in FIG. 6 is subjected to processing and its curvature changes will be described with reference to FIG. 7. In FIG. 7, the film formed before the warping correction mode is shown as the underlayer film 77, and the Cu film and the Ti film which are formed in the warping correction mode are indicated by reference numerals 78 and 79. In FIG. As described above, the wafer A1 is subjected to the film forming process three times by the recipe No. 2 set therein along the set conveying path, and is shown in FIG. 7B from the state of FIG. 7A. Likewise the curvature changes. The curvature of the wafer A1 shown in FIG. 7B is -0.011 + 0.004 + 0.004 + 0.004 = +0.001 m ^-1 .

Then, it conveys to the Ti film-forming module 5 along the set conveyance path | route, and the said No. set by the Ti film-forming module 5 was carried out. The Ti film 79 is formed by receiving a film forming process with a C1 recipe. When the Ti film 79 is formed, the stresses applied to the wafer W by the Ti film thus far laminated and the stresses given to the wafer A1 by the Cu film stacked so far are removed from each other, as shown in FIG. 7C. As described above, the wafer A1 is flat.

After the process set in this way, each wafer W is returned to the carrier C by the same path | route as the normal conveyance mode execution. Thereafter, the operator resumes the normal conveyance mode by the conveyance mode setting unit 67.

According to the above embodiment, it is possible to prevent the inconvenience that the wafer W having a large amount of warpage does not become uniformly adsorbed by the electrostatic chuck, and the inconvenience that the environment of each of the film forming modules 3 and 5 becomes unstable. The inconvenience of generating particles is eliminated. In addition, since the number of times of repeated use of the wafer W can be increased, the number of sheets of use of the wafer W can be saved. Therefore, the operation cost of the semiconductor manufacturing apparatus 1 can be reduced.

(Modification of 1st Embodiment)

In the first embodiment, the integrated film thicknesses of Cu and Ti are managed for each wafer W, and the curvature of the wafer W before the warping correction mode is calculated by calculation. In addition, as a modification of the embodiment, as described above, the curvature of the wafer W is bent after executing the normal conveyance mode in which the wafer W is automatically conveyed to, for example, the film forming modules 3 and 5 alternately. It may measure by a detector, and may perform the curvature correction mode which an operator sets the recipe and conveyance path of the film-forming process of the wafer W as above-mentioned based on the measurement result, and performs a process. The measurement of the curvature of this wafer W is performed in the alignment chamber 2, for example.

Hereinafter, the alignment chamber 2 comprised so that curvature can be measured is demonstrated, referring FIG. 8, 9 which is each longitudinal side view and a cross-sectional plan view. This alignment chamber 2 is equipped with the mounting base 21 for mounting the wafer W, The mounting base 21 is able to rotate about a perpendicular axis by the rotation drive mechanism 22. As shown in FIG. In addition, three optical sensors 23 are provided along the circumferential direction of the wafer W near the periphery of the wafer W placed on the mounting table 21. The optical sensor 23 is comprised by the light-emitting part 23a provided on the periphery of the wafer W, and the light receiving part 23b provided below, and the light-emitting part 23a irradiates light to the light receiving part 23b. . The light receiving unit 23b then outputs a signal indicating the amount of light incident on the control unit 6.

In the alignment chamber 2, a guide rail 24 extending in the horizontal direction and a moving part 25 moving along the guide rail are provided. The moving part 25 is provided with the arm 26 extended horizontally orthogonally to the guide rail 24, and the optical sensor 27 is provided in the front-end | tip of the arm 26. As shown in FIG. The optical sensors 23 and 27 constitute a warping detector. The moving part 25 moves the optical sensor 27 via the arm 26 in the extending direction of the arm 26. The optical sensor 27 is provided with the light emitting part which irradiates light to the lower wafer W, and the light receiving part which receives the light reflected from the wafer W. As shown in FIG.

The processing procedure of the modified example of the first embodiment will be described focusing on the differences from the first embodiment. For example, when an operator performs a predetermined operation during the normal conveyance mode as in the first embodiment, the conveyance of the wafer W from the carrier C is stopped. And about the wafer W carried out to the semiconductor manufacturing apparatus 1 from the said carrier C, the above-mentioned 1st conveyance chamber 11 → alignment chamber 2 → 1st conveyance chamber 11 → load The lock chamber 12 → 2nd conveyance chamber 14 → film-forming modules 3 and 5 → load lock chamber 13 → what is in the middle of the conveyance path | route of the 1st conveyance chamber 11 is conveyed toward the downstream side, and once It returns to the carrier C, and normal conveyance mode stops. And the wafer W returned to the carrier C is taken out in order from the inside, for example in the carrier C, and is conveyed to the alignment chamber 2 via the 1st conveyance chamber 11. When the wafer W is placed on the mounting table 21, the control unit 6 rotates the wafer W by one rotation by the rotation driving mechanism 22, and the amount of light incident on the light receiving unit 23b therebetween. Based on the change of, the radius and the center position of the wafer W are calculated. Then, the absolute value of the curvature of the wafer W is calculated from the calculated radius and, for example, the original radius of the wafer W stored in the first memory 63 of the controller 6 in advance. Moreover, the control part 6 locates the optical sensor 27 on the center of the wafer W, and irradiates light from the light emission part. The control part 6 detects the distance of the optical sensor 27 and the center part of the wafer W based on the light which the light receiving part of the optical sensor 27 received.

Subsequently, the control unit 6 locates the optical sensor 27 on the circumferential end of the wafer W based on the detected radius of the wafer W and irradiates light from the light emitting portion. The control part 6 detects the distance of the optical sensor 27 and the circumferential edge part of the wafer W based on the light which the light receiving part of the optical sensor 27 received. And the control part 6 detects the direction of curvature of the wafer W from the optical sensor 27 based on the distance of each center part and the peripheral part of the wafer W, and the direction of this curvature and the said curvature The curvature of the wafer W is determined from the absolute value. After this curvature determination, the wafer W is returned from the alignment chamber 2 to the carrier C via the 1st conveyance chamber 11. The curvature is displayed for each wafer W on the display unit 71 as in the above embodiment, and the operator performs the setting of the recipe in each film forming module and the setting of the conveyance path in the warping correction mode based on it.

(2nd embodiment)

By the way, in 1st Embodiment mentioned above, when an operator performs a curvature correction mode, an operator sets a recipe of the film-forming module, and based on the recipe, the operator conveys so that curvature may be zero with respect to each wafer W. FIG. Although the path is set, the program may automatically set the return path. In the semiconductor manufacturing apparatus 1 in which the curvature of the wafer W is computed based on the curvature data 66, and the data of the 2nd memory 68 is updated every time the film-forming demonstrated in 1st Embodiment is performed, An example in which the program automatically sets the return path will be described. In this example, the first threshold value and the second threshold value of curvature as reference for determining the transfer destination of the wafer W are stored in the second memory 68 of the controller 6 as a difference from the above-described apparatus. And the first threshold is greater than the second threshold. The first threshold value and the second threshold value are parameters that can be set, and can be set at device startup or for each device.

It is assumed here that the first threshold value is set to 0.0010 m ⁻¹ and the second threshold value is set to 0.0002 m ⁻¹ , respectively. First, as described above, the operator carries the wafer W in the normal transfer mode in which the wafer W is automatically transferred alternately to the film forming modules 3 and 5, for example. The stop processing is executed, and the recipes to be executed by the film forming modules 3 and 5 are set respectively. And when an operator performs the start process of the warpage correction mode, the wafer W in the carrier C will be arrange | positioned on the same as that at the time of execution of a normal conveyance mode, in order from the 2nd conveyance chamber in the above-mentioned path | route. Returned to (14). Then, the program 64 is the wafer (W), the second until the transfer to the transport chamber (14), the curvature of the second memory, the wafer (W) stored in the (68) 0.0010m ^-1 (first that is greater than the threshold value), whether 0.0002m ^-1 (second threshold value) larger than the range of 0.0010m ^-1 or less, and performs a determination of whether 0.0002m ^-1 or less.

When it is determined that the curvature of the wafer W exceeds 0.0010 m ⁻¹ , the program 64 sends data (which is referred to as first attribute data) that the curvature has exceeded the first threshold value to the second memory 68. The data is written in correspondence with the ID of the wafer. And the program 64 conveys the wafer W to the Ti film-forming module 5, and the said wafer W receives a film-forming process. As a result, the wafer W is bent in a direction opposite to the direction bent at the time of the determination. That is, the curvature approaches zero or bends toward the − side.

If the curvature of the wafer (W) is determined that a large range of 0.0010m ^-1 or less than 0.0002m ^-1, the program 64 includes a data (second attribute data to the curvature in the second memory 68. Such a range naerago Is written in correspondence with the ID of the wafer. And the program 64 conveys the wafer W to the Cu film-forming module 3, and the said wafer W receives a film-forming process. As a result, the wafer W is bent toward the same direction as the direction bent at the time of the determination. That is, the curvature is bent to increase toward the + side.

When it is determined that the curvature of the wafer W is 0.0002 m ⁻¹ or less, the program 64 sends the second memory 68 data (with the third attribute data) that the curvature is less than or equal to the second threshold value of the wafer. Write in correspondence with ID. Then, the program 64 conveys the wafer W to the Cu film forming module 3 and performs the film forming process so that the wafer W is bent so that its curvature is toward the + side or becomes larger to the + side.

After processing in each of the film forming modules 3 and 5, the wafer W is returned from the film forming modules 3 and 5 to the carrier C in the above-described path. After returning to the carrier C, the wafer W is repeatedly conveyed from the carrier C toward the 2nd conveyance chamber 14 by the path mentioned above. The first attribute is the case with respect to the wafer (W) which the data is given, the program 64 is not more than 0.0002m ^-1 is determined that the curvature of the wafer (W) 0.0002m ^-1 or less, the property data The wafer W is conveyed to the Cu film forming module 3 while being rewritten in the third attribute data, and the film forming process is performed there. If it is not 0.0002m ^-1 or less, the program 64 conveys the wafer W to the Ti film-forming module 5 without rewriting the attribute data and executes the film forming process.

And while the 2nd attribute data is provided to the wafer W toward the 2nd conveyance chamber 14, the program 64 determines whether the curvature of the wafer W is 0.0010 ^m <^-1> or more. And when it determines with 0.0010m <^-1> or more, the attribute data is rewritten to the 1st attribute data, and the wafer W is conveyed to the Ti film-forming module 5. As shown in FIG. Then, the film forming process is executed in the Ti film forming module 5. In addition, when it determines with not being 0.0010m <^-1> or more, the program 64 conveys the wafer W to the Cu film-forming module 3, without rewriting the attribute data. In the Cu film forming module 3, a film forming process is performed on the wafer W. As shown in FIG.

In addition, with respect to the fact that the third attribute data is provided to the wafer W directed to the second transfer chamber 14, the program 64 determines whether the curvature of the wafer W is 0.0002 m ⁻¹ or more, and is 0.0002 m. ^When it determines with ^-1 or more, the attribute data is rewritten to 2nd attribute data, the wafer W is conveyed to the Cu film-forming module 3, and a film-forming process is performed there. If it is determined that it is not 0.0002 m ⁻¹ or more, the program 64 conveys the wafer W to the Cu film forming module 3 without rewriting the attribute data, and forms the film on the wafer W therein. Run

The wafers W subjected to the processing in each of the film forming modules 3 and 5 are returned to the carrier C in the above-described path. It repeats after that, it conveys toward the 2nd conveyance chamber 14, distributes to the film-forming modules 3 and 5 according to attribute data and curvature, receives a process, and is returned to the carrier C. FIG. After carrying out the conveyance and film formation process repeatedly in this manner, when the operator executes the conveyance stop processing, the conveyance of each wafer W is stopped, and each wafer W is returned to the carrier C, and each wafer ( The attribute data stored for W) is erased. Also in this 2nd Embodiment, the effect similar to 1st Embodiment can be acquired.

In the above example, when the curvature of the wafer W is lower than 0.0002 m ⁻¹ , the second threshold, the Cu film is repeatedly formed until the curvature of the wafer W exceeds 0.0010 m ⁻¹ , the first threshold. If the curvature of the wafer W is higher than 0.0010 m ⁻¹ , which is the first threshold value, the Ti film is repeatedly formed until the curvature of the wafer W becomes less than or equal to 0.0002 m ⁻¹ , the second threshold value. Depending on the setting of the two thresholds, it is also possible to control the conveyance and the film formation process so that the wafer W bends in the reverse direction every time, so that the film formation process can always be performed on the wafer W with less warpage. The conveying path in the case where the curvature is determined to be 0.0002 m ⁻¹ (second threshold value) or less is not limited to the above example, and is arbitrary. For example, when the curvature of the wafer W is positive, the Ti film forming module ( 5), when the curvature of the wafer W is negative, it may be conveyed to the Cu film-forming module 3. In addition, also in the modification of 1st Embodiment which measures the curvature of a wafer in the alignment chamber 2, it is applicable to the program 64 which performs conveyance control as mentioned above.

(Third embodiment)

Next, 3rd Embodiment is described centering on difference with 1st Embodiment and 2nd Embodiment. In this third embodiment, as the semiconductor manufacturing apparatus 1, as described in the modification of the first embodiment, measuring the curvature of the wafer W in the alignment chamber 2 is used. In this third embodiment, the conveyance control is executed without using the curvature data 66 which defines the film thickness and the curvature change.

The operator sets in advance recipes to be executed in the film forming modules 3 and 5. And when an operator performs an initiation procedure of a process, the wafer W is conveyed to the alignment chamber 2 by the path mentioned above in the arrangement | sequence order in the carrier C, and the curvature is measured. As a result of the measurement, the program 64 transfers the wafer W to the Cu film forming module 3 when the curvature is-, and the wafer W to the Ti film forming module 5 when the curvature is 0 or +, respectively. do. Cu and Ti are formed in each of the film forming modules 3 and 5, and the wafer W is bent in the opposite direction to the direction in which it is bent at the time of the curvature measurement. After the film forming process, the wafer W is returned to the carrier C in the above-described path. The wafer W returned to the carrier C is repeatedly transported to the alignment chamber 2, the measurement of the curvature, the transport to the film forming module 3 or 5 based on the measurement result, and the film forming process in the film forming module of the destination. And the conveyance processing to the carrier C in this order. When the operator performs the stop procedure of the processing, the conveyance and film formation of the wafer W are stopped.

Also in this 3rd Embodiment, since the bending of the wafer W excessively in the same direction is suppressed, the effect similar to 1st and 2nd Embodiment can be acquired. In addition, the third embodiment automatically executes the distribution (transfer schedule) of the wafer W to the film forming modules 3 and 5 based on the measured value of the curvature of the wafer W, thereby providing a wafer ( Although it is going to extend the service life of W), it is not limited to the example mentioned above as the method. For example, if the threshold value is set to a value of curvature, and the curvature of the wafer W exceeds, for example, the threshold on the + side (in this case, the curvature on the + side is increased), the preset value is set, for example, on the wafer W. Only one number of times may be continued, and the wafer W may be loaded into the Ti film forming module 5 which performs the processing in which the curvature of the wafer W is directed toward the − side, for example, only a predetermined number of times.

In addition, when distributing to the film forming modules 3 and 5 of the wafer W, it is not necessary to use the information of the film thickness executed in each film forming module. Further, when obtaining the curvature of the wafer W and determining the conveyance schedule based on the result, instead of using a warping detector as a means of obtaining the curvature, the computer may use the wafer (as described in the first embodiment). The curvature may be estimated based on W). In this case, for example, when the wafer W is taken out from the carrier C, the computer obtains the curvature of the wafer W, and the film forming module to be used is determined based on the value.

By the way, in each embodiment, although the wafer W is conveyed to the semiconductor manufacturing apparatus 1 by the carrier C, the holding | maintenance which hold | maintains several wafer W in the 1st conveyance chamber 11, for example. A shelf (holding portion) may be provided, and instead of taking out the wafer W from the carrier C, the wafer W may be taken out of the holding shelf.

(4th Embodiment)

Next, 4th Embodiment is described focusing on difference with 1st Embodiment. In this 4th Embodiment, in the normal conveyance mode, the wafer W of the carrier C is measured before the conveyance to the film-forming modules 3 and 5, and the change amount of the curvature and curvature is measured. And when the amount of change of such curvature and curvature exceeds the threshold set by the control part 8, conveyance to the film-forming modules 3 and 5 is stopped. In addition, the warpage correction mode is not executed in this fourth embodiment.

In this 4th Embodiment, the alignment chamber 2 is comprised like the modified example of 1st Embodiment. 10, the structure of the control part 8 in this 4th Embodiment is shown. The control unit 8 includes a memory 81. In the memory 81, the ID of the wafer, the latest curvature (curvature amount) measured for each wafer W, the curvature measured before, and the curvature of the curvature. Change values of curvatures that are differentials are stored in correspondence with each other. In addition, the control part 8 is equipped with the memory 82, The memory 82 stores the threshold of curvature, and the threshold of the change amount of curvature.

Then, the processing process in this 4th embodiment is demonstrated. First, the operator sets the recipes for the film forming modules 3 and 5 as in the case of setting the normal mode of the first embodiment. In addition, here, for example, as in the first embodiment, the wafers W are transported alternately between the film forming modules 3 and 5.

First, the carrier C is conveyed to the semiconductor manufacturing apparatus 1, and after that, according to the arrangement | sequence order in the carrier C, the wafer W is sequentially in the alignment chamber 2 like 1st Embodiment. Is returned. As described above, the curvature is measured by the controller 8, and the value is stored in the memory 81 as the latest curvature (step T1). Thereafter, the wafer W is conveyed to the film forming module 3 or 5 and subjected to the film forming process, and then returned to the carrier C (step T2). Then, the wafer W is conveyed from the carrier C to the alignment chamber 2 again, and the curvature is measured. When the curvature is measured, the control part 8 makes the latest curvature memorize | stored in the memory 81 with respect to the wafer W as the last measured curvature, and updates the curvature measured this time as the latest curvature (step) (T3)].

Then, the control unit 8 takes the curvature measured last time from the latest curvature, and stores the calculated value in the memory 81 as the amount of change in the curvature (step T4). Subsequently, the controller 8 determines whether or not the latest curvature and the amount of change in the curvature exceed the thresholds stored in the memory 82, respectively (step T5). If it is determined in step T5 that both the curvature and the amount of change in curvature have not exceeded the threshold, the step after step T3 is executed, and the film forming process is repeatedly executed. And if it is determined in step T5 that the amount of change in curvature or curvature has exceeded the threshold, the wafer W is not conveyed to the film forming modules 3 and 5 but is returned to the carrier C (step T6). )]. And the control part 8 displays on the display part 71 whether one of the ID of the wafer W and the amount of change of curvature or curvature so determined exceeded a threshold. And the wafer W returned to the carrier C in this way is not conveyed from carrier C even if the order in which the wafer W is conveyed comes.

Thus, in 4th Embodiment, operation | movement which reuses the wafer W is possible until the amount of change of curvature or curvature exceeds a threshold. As a result, it is possible to prevent the inconvenience that the wafer W having a large curvature is not uniformly adsorbed to the electrostatic chuck as in the first embodiment. Moreover, in 4th Embodiment, since the change amount of curvature is also managed besides curvature, it is advantageous because it can also monitor the deterioration and damage state of the wafer W based on this.

In each of the above embodiments, the film forming module is a module for performing CVD, but may be a module for performing PVD.

(Reference test)

For the dummy wafers 1 to 3 made of Si (silicon), Ti is formed by a film forming module that performs PVD. In this film forming module, a recipe was set to perform film formation at a film thickness of 10 nm by one film forming process. The film forming process was repeated 100 times for the wafers 1 to 3, respectively, and the radius of the wafer W was measured each time the film forming process was performed. In this test, the same wafer is continuously conveyed to the film forming module 100 times, and then the following wafers are conveyed to the film forming module.

Fig. 11 shows the results of this test, in which the vertical axis of the graph shows the radius of the wafer, and the horizontal axis shows the number of processes in the film forming module. As shown in this figure, the radius of the wafers 1 to 3 is changed in proportion to the number of times of processing, that is, the film thickness. Therefore, it can be seen that there is a correlation between the film thickness of Ti and the change in curvature of the wafer as described with reference to FIG. 2.

C: Carrier W: Wafer
DESCRIPTION OF SYMBOLS 1 Semiconductor manufacturing apparatus 11: 1st conveyance chamber
12, 13: load lock room 14: 2nd conveyance room
16: first conveying means 17: second conveying means
2: alignment room 3, 5: deposition module
6: control unit 60: recipe setting unit
63: first memory 64: program
67: conveyance mode setting unit 68: the second memory
71: display unit 8: control unit
81, 82: memory

Claims (7)

In the use method of the dummy substrate in the substrate processing apparatus in which the several process chamber which performs film-forming process with respect to a board | substrate is connected to the board | substrate conveyance chamber,
Taking out the dummy substrate from the dummy substrate storage part, carrying it into the process chamber via the substrate transfer chamber, and performing a film forming process;
For each of the plurality of dummy substrates stored in the dummy substrate storage unit, a process of creating a film formation history by a computer, including the type and film thickness of the formed film, based on the process recipe executed in the process chamber;
Calculating curvature of the dummy substrate by a computer on the basis of the curvature data corresponding to the film thickness and the curvature change of the substrate due to film formation for each type of film, and based on the curvature data and the film formation history of the dummy substrate;
The curvature of the dummy substrate based on the curvature of the dummy substrate obtained in this process, the curvature data, and the process schedule including the film type and film thickness of the film forming process scheduled in the process chamber are controlled so as to suppress the warp of the dummy substrate. And a step of creating a transfer schedule of the dummy substrate.
How to use a dummy substrate. In the use method of the dummy substrate in the substrate processing apparatus in which the several process chamber which performs film-forming process with respect to a board | substrate is connected to the board | substrate conveyance chamber,
Taking out the dummy substrate from the dummy substrate storage part, carrying it into the process chamber via the substrate transfer chamber, and performing a film forming process;
Carrying out a plurality of dummy substrates stored in the dummy substrate storage unit into an alignment chamber for adjusting the direction of the dummy substrate, and obtaining curvature with each of the plurality of dummy substrates by a bending detector;
Based on the curvature of the dummy substrate obtained in this process and the process schedule including the type of film for the film formation process scheduled in the process chamber, the transfer schedule of the dummy substrate to the process chamber is suppressed so that the bending of the dummy substrate is suppressed. Characterized in that it comprises a step of creating
How to use a dummy substrate. The method of claim 2,
Instead of carrying in a plurality of dummy substrates stored in the substrate storage unit into the alignment chamber to obtain curvature by the warp detector for each of the plurality of dummy substrates, the type and film thickness of the film formed on each dummy substrate. The curvature is calculated by a computer based on the film-forming history containing the film | membrane, and the curvature data which matched the film thickness and the curvature change of the board | substrate by film-forming for each type of film | membrane.
How to use a dummy substrate. The method of claim 2 or 3,
The process schedule includes a film thickness of a film of a predetermined film forming process.
How to use a dummy substrate. The method according to any one of claims 1 to 4,
An operator schedules the transfer schedule of the dummy substrate.
How to use a dummy substrate. The method of claim 5, wherein
Curvature data is displayed on the display of the computer, characterized in that
How to use a dummy substrate. The method according to any one of claims 1 to 4,
The transfer schedule of the dummy substrate is created by a computer by a program.
How to use a dummy substrate.

Images