KR20110021622A - Apparatus for thin layer deposition and method for manufacturing of organic light emitting display apparatus using the same - Google Patents

Abstract

PURPOSE: A thin film depositing apparatus and a method for manufacturing an organic electroluminescent display device are provided to facilitate recycle of deposition material and improve the uniformity of a deposited thin film. CONSTITUTION: A thin film depositing apparatus comprises a deposition source, a deposition source nozzle unit, a patterning slit sheet, a radiating unit, and a blocking plate assembly(130). The deposition source radiates deposition material. The deposition source nozzle unit is placed on one side of the deposition source, and multiple deposition source nozzles are formed along a first direction. The patterning slit sheet is faced to the deposition source, and multiple patterning slits are formed along the first direction. The radiating unit is placed on the patterning slit sheet. The blocking plate assembly divides a space between the patterning slit sheet and the deposition source nozzle unit into multiple deposition spaces.

Description

Thin film deposition apparatus and method for manufacturing organic light emitting display device using the same {Apparatus for thin layer deposition and method for manufacturing of organic light emitting display apparatus using the same}

The present invention relates to a thin film deposition apparatus and a method of manufacturing an organic light emitting display device using the same. Specifically, a thin film deposition apparatus capable of removing a deposition material deposited on a patterned slit sheet without a separate cleaning process and an organic light emitting display using the same It is to provide a method of manufacturing the device.

Among the display devices, the organic light emitting display device has attracted attention as a next generation display device because of its advantages of having a wide viewing angle, excellent contrast, and fast response speed.

In general, an organic light emitting display device has a stacked structure in which a light emitting layer is inserted between an anode and a cathode so that colors can be realized on the principle that holes and electrons injected from the anode and the cathode recombine in the light emitting layer to emit light. However, such a structure makes it difficult to obtain high-efficiency light emission. Therefore, intermediate layers such as an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer are selectively inserted between each electrode and the light emitting layer.

However, since it is practically very difficult to form fine patterns of organic thin films such as a light emitting layer and an intermediate layer, and the luminous efficiency of red, green, and blue varies depending on the layers, a conventional thin film deposition apparatus has a large area (more than 5G). It is impossible to manufacture large size organic light emitting display devices with satisfactory driving voltage, current density, brightness, color purity, luminous efficiency, and lifespan due to impossibility of patterning mother-glass. Do.

Meanwhile, the organic light emitting display device includes a light emitting layer and an intermediate layer including the same between the first and second electrodes facing each other. In this case, the electrodes and the intermediate layer may be formed by various methods, one of which is deposition. In order to fabricate an organic light emitting display device using a deposition method, a fine metal mask (FMM) having the same pattern as the pattern of the thin film to be formed is in close contact with the surface of the substrate on which the thin film or the like is to be formed. The material is deposited to form a thin film of a predetermined pattern.

The main object of the present invention is to remove the deposition material deposited on the patterned slit sheet without the cleaning process of the patterned slit sheet, can be easily applied to the large-scale substrate production process, the production yield and deposition efficiency is improved, the material recycling It is easy to provide a thin film deposition apparatus and an organic light emitting display apparatus manufacturing method using the same that can improve the thickness uniformity of the deposited material.

A thin film deposition apparatus according to an embodiment of the present invention is a thin film deposition apparatus for forming a thin film on a substrate, the deposition source for emitting a deposition material, and disposed on one side of the deposition source, the first direction A deposition source nozzle unit in which a plurality of deposition source nozzles are formed, a patterning slit sheet disposed to face the deposition source, and having a plurality of patterning slits formed along the first direction, and heat radiation disposed on the patterning slit sheet And a plurality of blocking plates disposed in the first direction between the deposition source nozzle unit and the patterning slit sheet to divide a space between the deposition source nozzle unit and the patterning slit sheet into a plurality of deposition spaces. And a barrier plate assembly including the barrier rib assembly, wherein the thin film deposition apparatus is formed to be spaced apart from the substrate by a predetermined degree. The substrate can be formed either on one side to allow for relative movement with respect to the other side.

In the present invention, the heat dissipation portion may be disposed on the patterning slit sheet facing the deposition source.

In the present disclosure, the heat dissipation unit may remove the deposition material deposited on the patterning slit sheet by heating the patterning slit sheet.

In the present invention, the heat dissipation unit may heat the patterning slit sheet above the evaporation temperature of the deposition material.

In the present invention, the heat dissipation unit may heat the patterning slit sheet while the deposition source stops radiating the deposition material.

In the present invention, the heat dissipating unit may maintain the patterning slit sheet at a constant temperature after heating the patterning slit sheet.

In the present invention, the heat dissipation unit may be a coil heater.

In the present invention, the heat dissipation unit may be a thin film heater.

In the present invention, an insulating member may be further provided between the heat dissipation unit and the patterning slit sheet.

In the present invention, the patterning slit sheet further includes a bar disposed between the patterning slits adjacent to each other, the heat dissipation portion may be disposed on the bar.

In the present invention, each of the plurality of blocking plates is formed in a second direction substantially perpendicular to the first direction, thereby partitioning a space between the deposition source nozzle unit and the patterning slit sheet into a plurality of deposition spaces. can do.

In the present invention, the plurality of blocking plates may be arranged at equal intervals.

In the present invention, the blocking plates and the patterning slit sheet may be formed to be spaced apart at a predetermined interval.

In the present invention, the blocking plate assembly may include a first blocking plate assembly having a plurality of first blocking plates and a second blocking plate assembly having a plurality of second blocking plates.

In the present invention, each of the plurality of first blocking plates and the plurality of second blocking plates is formed in a second direction substantially perpendicular to the first direction, so that the deposition source nozzle unit and the patterning slit sheet The space between can be partitioned into a plurality of deposition spaces.

In the present invention, each of the plurality of first blocking plates and the plurality of second blocking plates may be disposed to correspond to each other.

In the present invention, the first blocking plate and the second blocking plate corresponding to each other may be disposed to be substantially on the same plane.

A thin film deposition apparatus according to another embodiment of the present invention is a thin film deposition apparatus for forming a thin film on a substrate, the deposition source for emitting a deposition material, and disposed on one side of the deposition source, the first direction A patterning slit sheet having a deposition source nozzle portion in which a plurality of deposition source nozzles are formed along with the deposition source nozzle portion, and having a plurality of patterning slits formed along a second direction perpendicular to the first direction And a heat dissipation unit disposed on the patterning slit sheet, wherein the deposition is performed while the substrate moves along the first direction with respect to the thin film deposition apparatus, and the deposition source, the deposition source nozzle unit, and the patterning slit. The sheet may be integrally formed.

A method of manufacturing an organic light emitting display device according to an embodiment of the present invention is a method of manufacturing an organic light emitting display device using a thin film deposition apparatus for forming a thin film on a substrate, wherein the substrate is a predetermined degree relative to the thin film deposition apparatus It may be disposed to be spaced apart, and the deposition material radiated from the thin film deposition apparatus is deposited on the substrate while one side of the thin film deposition apparatus and the substrate is moved relative to the other side. .

In the present invention, the depositing of the deposition material on the substrate may include the deposition material radiated from the thin film deposition apparatus continuously deposited on the substrate while the substrate is moved relative to the thin film deposition apparatus. have.

According to the thin film deposition apparatus of the present invention made as described above, it is possible to remove the deposition material deposited on the patterning slit sheet without a separate cleaning process, can be easily applied to large-scale substrate mass production process, manufacturing yield and deposition efficiency This can be improved, the recycling of the deposition material can be facilitated, and the uniformity of the deposited thin film can be improved.

1 is a plan view of an organic light emitting display device manufactured by a thin film deposition apparatus according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view of a portion of the organic light emitting display device of FIG. 1.
3 is a perspective view schematically showing a thin film deposition apparatus according to an embodiment of the present invention.
4 is a schematic side view of the thin film deposition apparatus of FIG. 3.
FIG. 5 is a schematic plan view of the thin film deposition apparatus of FIG. 3.
6 is a plan view schematically showing a thin film deposition apparatus according to another embodiment of the present invention.
7A is a view schematically illustrating a state in which a deposition material is being deposited in a thin film deposition assembly according to an exemplary embodiment of the present invention.
FIG. 7B is a diagram illustrating a shadow generated when the deposition space is separated by a blocking plate as shown in FIG. 6A.
FIG. 7C is a diagram illustrating a shadow that occurs when the deposition space is not separated. FIG.
8 is a perspective view schematically showing a thin film deposition apparatus according to another embodiment of the present invention.
9 is a perspective view schematically showing a thin film deposition apparatus according to another embodiment of the present invention.
FIG. 10 is a schematic side view of the thin film deposition apparatus of FIG. 9.
FIG. 11 is a schematic plan view of the thin film deposition apparatus of FIG. 9.
12 is a plan view schematically showing a thin film deposition apparatus according to another embodiment of the present invention.
13 is a view showing a thin film deposition apparatus according to another embodiment of the present invention.
14 is a view schematically illustrating a distribution form of a deposited film deposited on a substrate when the deposition source nozzle is not tilted in the thin film deposition apparatus according to the present invention.
15 is a view schematically showing a distribution form of a deposition film deposited on a substrate when the deposition source nozzle is tilted in the thin film deposition apparatus according to the present invention.

Hereinafter, with reference to the embodiments of the present invention shown in the accompanying drawings will be described in detail the present invention. Shapes and sizes of the elements in the drawings may be exaggerated for more clear description, elements denoted by the same reference numerals in the drawings are the same element.

1 is a plan view of an organic light emitting display device manufactured by a thin film deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 1, an organic light emitting display device may include a pixel region 30 and a circuit region 40 at an edge of the pixel region 30. The pixel region 30 may include a plurality of pixels, and each of the pixels may include a light emitting part that emits light to implement a predetermined image.

According to an embodiment of the present invention, the light emitting unit may be formed of a plurality of sub-pixels each having an organic EL device. In the case of a full color organic light emitting display device, subpixels of red (R), green (G), and blue (B) may be arranged in various patterns such as a line, a mosaic, and a grid to include pixels. The organic light emitting display device manufactured by the thin film deposition apparatus according to the exemplary embodiment of the present invention may be a mono color flat panel display device, not a full color flat panel display device.

The circuit region 40 may control an image signal or the like input to the pixel region 30. In the organic light emitting display device, at least one thin film transistor may be provided in the pixel region 30 and the circuit region 40, respectively.

The thin film transistor provided in the pixel region 30 includes a switching thin film transistor which transmits a data signal to the light emitting element according to the gate line signal and controls its operation, and a predetermined current is applied to the organic electroluminescent element according to the data signal. There may be a pixel portion thin film transistor such as a driving thin film transistor for driving to flow. In addition, the thin film transistor provided in the circuit region 40 may include a circuit part thin film transistor provided to implement a predetermined circuit.

Of course, the number and arrangement of the thin film transistors may vary depending on the characteristics of the display, the driving method, and the like, and the arrangement may be various.

FIG. 2 is a cross-sectional view of a sub-pixel of the organic light emitting display device of FIG. 1.

As shown in FIG. 2, a buffer layer 51 is formed on a glass or plastic substrate 50, and a thin film transistor TFT and an organic light emitting diode OLED may be formed thereon.

The active layer 52 of a predetermined pattern may be disposed on the buffer layer 51 of the substrate 50. The gate insulating layer 53 may be disposed on the active layer 52, and the gate electrode 54 may be disposed in a predetermined region above the gate insulating layer 53. The gate electrode 54 may be connected to a gate line (not shown) for applying the thin film transistor on / off signal. An interlayer insulating layer 55 is formed on the gate electrode 54, and the source / drain electrodes 56 and 57 are respectively formed in the source / drain regions 52b and 52c of the active layer 52 through the contact holes. It may be formed to contact. A passivation film 58 made of SiO ₂ , SiNx, or the like is formed on the source / drain electrodes 56 and 57, and acrylic, polyimide, and BCB are formed on the passivation film 58. The planarization layer 59 may be formed of an organic material such as benzocyclobutene. A pixel electrode 61 serving as an anode of the organic light emitting diode OLED may be formed on the planarization layer 59, and a pixel define layer 60 may be formed of an organic material to cover the pixel electrode 61. After the predetermined opening is formed in the pixel defining layer 60, the organic layer 62 may be formed on the pixel electrode 61 exposed to the outside by forming an upper portion and an opening of the pixel defining layer 60. . The organic layer 62 may include a light emitting layer. The present invention is not necessarily limited to such a structure, and the structure of various organic light emitting display devices may be applied as it is.

The organic light emitting diode OLED displays predetermined image information by emitting red, green, and blue light according to the flow of current, and is connected to the drain electrode 56 of the thin film transistor to receive positive power therefrom. The pixel electrode 61 and the counter electrode 63 provided to cover all the pixels to supply negative power, and the organic film 62 disposed between the pixel electrodes 61 and the counter electrode 63 to emit light. Can be made.

The pixel electrode 61 and the counter electrode 63 are insulated from each other by the organic layer 62, and apply light to the organic layer 62 to emit light in the organic layer 62.

The organic layer 62 may be a low molecular or polymer organic layer. When the low molecular organic layer is used, a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), An electron transport layer (ETL), an electron injection layer (EIL), and the like may be formed by stacking a single or a composite structure. The organic materials usable may also be copper phthalocyanine (CuPc) or N. , N-di (naphthalen-1-yl) -N, N'-diphenyl-benzidine (N, N'-Di (naphthalene-1-yl) -N, N'-diphenyl-benzidine: NPB), tris- Various applications include 8-hydroxyquinoline aluminum (Alq3) and the like. These low molecular weight organic films can be formed by a vacuum deposition method.

In the case of the polymer organic film, the structure may be generally provided as a hole transporting layer (HTL) and a light emitting layer (EML). In this case, PEDOT is used as the hole transporting layer, and poly-phenylenevinylene (PPV) and polyfluorene (Polyfluorene) are used as the light emitting layer. A polymer organic material such as) may be used, and it may be formed by screen printing or inkjet printing.

Such an organic film is not necessarily limited thereto, and various embodiments may be applied.

The pixel electrode 61 functions as an anode electrode, and the counter electrode 63 functions as a cathode electrode. Of course, the polarities of these pixel electrodes 61 and the counter electrode 63 may be reversed.

The pixel electrode 61 may be provided as a transparent electrode or a reflective electrode, and when used as a transparent electrode, may be provided as ITO, IZO, ZnO, or In ₂ O ₃ , and when used as a reflective electrode, Ag, Mg After forming a reflecting film with Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and a compound thereof, ITO, IZO, ZnO, or In ₂ O ₃ can be formed thereon.

Meanwhile, the counter electrode 63 may also be provided as a transparent electrode or a reflective electrode. When the counter electrode 63 is used as a transparent electrode, since the counter electrode 63 is used as a cathode, a metal having a small work function, that is, Li, Ca, or LiF is used. / Ca, LiF / Al, Al, Ag, Mg, and their compounds are deposited to face the organic film 62, and then formed thereon a transparent electrode such as ITO, IZO, ZnO, or In ₂ O ₃ The auxiliary electrode layer or the bus electrode line may be formed of the solvent material. And, when used as a reflective electrode can be formed by depositing the above Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg, and their compounds.

In such an organic light emitting display device, the organic layer 62 including the light emitting layer may be formed by a thin film deposition apparatus (see 100 of FIG. 3) to be described later.

Hereinafter, a thin film deposition apparatus and a manufacturing method of an organic light emitting display apparatus using the same according to an embodiment of the present invention will be described in detail.

3 is a perspective view schematically showing a thin film deposition assembly according to an embodiment of the present invention, FIG. 4 is a schematic side view of the thin film deposition assembly of FIG. 3, and FIG. 5 is a schematic plan view of the thin film deposition assembly of FIG. 3. to be.

3, 4, and 5, the thin film deposition assembly 100 according to the exemplary embodiment of the present invention includes a deposition source 110, a deposition source nozzle unit 120, a blocking plate assembly 130, and a patterning slit. The sheet 150 and the heat dissipation unit 160 may be included.

3, 4, and 5, although the chamber is not shown for convenience of description, all the components of FIGS. 3 to 5 may be disposed in a chamber in which an appropriate degree of vacuum is maintained. This is to ensure the straightness of the deposition material.

In detail, in order for the deposition material 115 emitted from the deposition source 110 to pass through the deposition source nozzle unit 120 and the patterning slit sheet 150 to be deposited on the substrate 400 in a desired pattern, a chamber (not shown) is basically used. The inside must maintain the same high vacuum as the FMM (Fine matel mask) deposition method. In addition, when the temperature of the blocking plate 131 and the patterning slit sheet 150 is sufficiently lower than the temperature of the deposition source 110 (about 100 ° or less), the space between the deposition source nozzle unit 120 and the patterning slit sheet 150 is high vacuum. I can keep it in a state. As such, when the temperature of the blocking plate assembly 130 and the patterning slit sheet 150 is sufficiently low, all of the deposition material 115 radiating in an undesired direction may be adsorbed on the surface of the blocking plate assembly 130 to maintain high vacuum. Since the collision between the deposition materials does not occur, the straightness of the deposition materials can be secured. In this case, the blocking plate assembly 130 faces the high temperature deposition source 110, and the temperature closes to the deposition source 110 at a maximum of about 167 ° C., so that a partial cooling device may be further provided if necessary. To this end, the blocking plate assembly 130 may be formed with a cooling member (not shown).

In such a chamber (not shown), a substrate 400 which is a deposition target is disposed. The substrate 400 may be a substrate for a flat panel display, and a large area substrate such as a mother glass capable of forming a plurality of flat panel displays may be applied.

Here, in one embodiment of the present invention, the substrate 400 is characterized in that the deposition proceeds while moving relative to the thin film deposition assembly 100.

In detail, in the conventional FMM deposition method, since the FMM size must be formed to be the same as the substrate size, the FMM must be enlarged as the substrate size increases. However, there has been a problem that it is not easy to manufacture an enlarged FMM, and it is not easy to align the FMM to a precise pattern.

In order to solve such a problem, the thin film deposition assembly 100 according to an embodiment of the present invention is characterized in that the deposition is performed while the thin film deposition assembly 100 and the substrate 400 move relative to each other. In other words, the substrate 400 disposed to face the thin film deposition assembly 100 may move in the Y-axis direction and may continuously perform deposition. That is, deposition is performed by scanning. Here, although the substrate 400 is shown to be deposited while moving in the Y-axis direction in the chamber (not shown), the spirit of the present invention is not limited thereto, the substrate 400 is fixed and thin film deposition The assembly 100 itself may move in the Y-axis direction to perform deposition.

Accordingly, the thin film deposition assembly 100 of the present invention can make the patterning slit sheet 150 much smaller than the conventional FMM. That is, in the case of the thin film deposition assembly 100 of the present invention, since the substrate 400 moves in the Y-axis direction and performs deposition continuously, that is, in a scanning manner, X of the patterning slit sheet 150 If only the width in the axial direction and the width in the X-axis direction of the substrate 400 are substantially the same, the length of the Y-axis direction of the patterning slit sheet 150 may be formed to be much smaller than the length of the substrate 400. . Thus, since the patterning slit sheet 150 can be made much smaller than the conventional FMM, the patterning slit sheet 150 of the present invention is easy to manufacture. That is, in all processes, such as etching of the patterning slit sheet 150, precision tension and welding operations thereafter, movement and cleaning operations, the patterning slit sheet 150 having a small size is advantageous over the FMM deposition method. In addition, this becomes more advantageous as the display device becomes larger.

As such, in order for the deposition to be performed while the thin film deposition assembly 100 and the substrate 400 move relative to each other, it is preferable that the thin film deposition assembly 100 and the substrate 400 are spaced to some extent. This will be described later in detail.

Meanwhile, a deposition source 110 in which the deposition material 115 is received and heated may be disposed on the side of the chamber that faces the substrate 400. As the deposition material 115 stored in the deposition source 110 is vaporized, deposition may be performed on the substrate 400.

In detail, the deposition source 110 includes the crucible 111 filled with the deposition material 115 therein, and the deposition material 115 filled inside the crucible 111 by heating the crucible 111. One side, in detail, may be provided with a heater 112 for evaporating to the deposition source nozzle unit 120 side.

The deposition source nozzle unit 120 may be disposed on one side of the deposition source 110, in detail, the side of the deposition source 110 that faces the substrate 400. In addition, a plurality of deposition source nozzles 121 may be formed in the deposition source nozzle unit 120 along the X-axis direction. Here, each of the plurality of deposition source nozzles 121 may be formed at the same interval. The evaporation material 115 vaporized in the evaporation source 110 passes through the evaporation source nozzle unit 120 such that the evaporation material 115 is directed toward the substrate 400 as the evaporation target.

The blocking plate assembly 130 may be disposed at one side of the deposition source nozzle unit 120. The blocking plate assembly 130 may include a plurality of blocking plates 131 and a blocking plate frame 132 provided outside the blocking plates 131. The plurality of blocking plates 131 may be arranged parallel to each other along the X-axis direction. Here, each of the plurality of blocking plates 131 may be disposed at the same interval. In addition, each of the blocking plates 131 may be arranged to be parallel to the YZ plane when viewed in the drawing, that is, perpendicular to the X-axis direction. The plurality of blocking plates 131 disposed as described above may serve to divide the space between the deposition source nozzle unit 120 and the patterning slit sheet 150 into a plurality of deposition spaces S. That is, in the thin film deposition assembly 100 according to the exemplary embodiment, the deposition space S is separated by each deposition source nozzle 121 to which the deposition material is sprayed by the blocking plates 131. It features one.

Here, each of the blocking plates 131 may be disposed between the deposition source nozzles 121 adjacent to each other. In other words, one deposition source nozzle 121 may be disposed between the blocking plates 131 adjacent to each other. Preferably, the deposition source nozzle 121 may be located at the center of the barrier plate 131 adjacent to each other. As described above, the blocking plate 131 partitions the space between the deposition source nozzle unit 120 and the patterning slit sheet 150 into a plurality of deposition spaces S, thereby depositing one discharge source nozzle 121. The material may not be mixed with deposition materials discharged from other deposition source nozzles 121 but may be deposited on the substrate 400 through the patterning slit 151. In other words, the blocking plates 131 may serve to guide the movement path in the X-axis direction of the deposition material so that the deposition material discharged through the deposition source nozzle 121 is not dispersed and maintains straightness.

As such, by providing the blocking plates 131 to secure the straightness of the deposition material, the size of the shadow formed on the substrate can be significantly reduced, and thus the thin film deposition assembly 100 and the substrate 400 may be uniformly fixed. It becomes possible to space apart. This will be described later in detail.

Meanwhile, a blocking plate frame 132 may be further provided outside the plurality of blocking plates 131. The blocking plate frame 132 is provided on the upper and lower surfaces of the plurality of blocking plates 131 to support the positions of the plurality of blocking plates 131, and at the same time, the deposition material discharged through the deposition source nozzle 121 is dispersed. It may serve to guide the movement path in the Y-axis direction of the deposition material.

Meanwhile, although the deposition source nozzle unit 120 and the blocking plate assembly 130 are shown to be spaced apart to some extent, the spirit of the present invention is not limited thereto.

That is, in order to prevent the heat emitted from the deposition source 110 from being conducted to the blocking plate assembly 130, the deposition source nozzle unit 120 and the blocking plate assembly 130 may be formed to be spaced apart from each other to some extent. When an appropriate heat insulating means is provided between the original nozzle unit 120 and the blocking plate assembly 130, the deposition source nozzle unit 120 and the blocking plate assembly 130 may be in contact with each other.

Meanwhile, the blocking plate assembly 130 may be formed to be separated from the thin film deposition assembly 100. In detail, the conventional FMM deposition method has a problem that the deposition efficiency is low. Here, the deposition efficiency refers to the ratio of the material vaporized on the substrate among the vaporized material from the deposition source. The deposition efficiency in the conventional FMM deposition method is not only about 32% low, but in the conventional FMM deposition method, since about 68% of organic matter which is not used for deposition is deposited everywhere in the evaporator, the recycling is easy. There was a problem of not doing.

In order to solve such a problem, in the thin film deposition assembly 100 according to the exemplary embodiment of the present invention, since the deposition space is separated from the external space using the blocking plate assembly 130, the deposition space is not deposited on the substrate 400. Deposition materials can be deposited mostly in the barrier plate assembly 130. Therefore, when the barrier plate assembly 130 is formed to be detachable from the thin film deposition assembly 100, and a large amount of deposition material is accumulated in the barrier plate assembly 130 after a long time deposition, the barrier plate assembly 130 is separated and separated. The deposition material may be recovered by placing it in a deposition material recycling apparatus. Through such a configuration, it is possible to obtain an effect of reducing the manufacturing cost by increasing the deposition material recycling rate.

The patterning slit sheet 150 and the patterning slit sheet frame 155 may be further provided between the deposition source 110 and the substrate 400. The patterning slit sheet frame 155 is formed in a substantially window-like shape, and the patterning slit sheet 150 may be coupled to the inside thereof. In addition, a plurality of patterning slits 151 and a plurality of patterning bars 152 may be alternately formed in the patterning slit sheet 150 along the X-axis direction. The lengths of the patterning slits 151 corresponding to one deposition space S may not be the same as illustrated in FIG. 1. This is to improve the thickness uniformity of the deposited thin film. This will be described later.

The deposition material 115 vaporized in the deposition source 110 may pass through the deposition source nozzle unit 120 and the patterning slit sheet 150 toward the substrate 400, which is the deposition target. In this case, the patterning slit sheet 150 may be manufactured by etching, which is the same method as a method of manufacturing a conventional fine metal mask (FMM), in particular, a stripe type mask.

Here, the thin film deposition assembly 100 according to the exemplary embodiment of the present invention may have a greater number of patterning slits 151 than the total number of deposition source nozzles 121. In addition, the number of patterning slits 151 may be greater than the number of deposition source nozzles 121 disposed between two blocking plates 131 adjacent to each other.

 That is, one deposition source nozzle 121 may be disposed between two blocking plates 131 adjacent to each other. At the same time, a plurality of patterning slits 151 may be disposed between two blocking plates 131 neighboring each other. The space between the deposition source nozzle unit 120 and the patterning slit sheet 150 is partitioned by two blocking plates 131 adjacent to each other, and the deposition space S for each deposition source nozzle 121. This is separated. Therefore, the deposition material radiated from one deposition source nozzle 121 may be deposited on the substrate 400 through the patterning slits 151 located in the same deposition space (S).

Meanwhile, the above-described blocking plate assembly 130 and the patterning slit sheet 150 may be formed to be spaced apart from each other to some extent, and the blocking plate assembly 130 and the patterning slit sheet 150 may be separated from each other by the connecting member 135. Can be connected. In detail, since the temperature of the blocking plate assembly 130 rises by about 100 ° C. or more by the deposition source 110 in a high temperature state, the temperature of the raised blocking plate assembly 130 is not conducted to the patterning slit sheet 150. The blocking plate assembly 130 and the patterning slit sheet 150 are spaced apart to some extent.

As described above, the thin film deposition assembly 100 according to the embodiment of the present invention performs deposition while moving relative to the substrate 400, and thus the thin film deposition assembly 100 is performed on the substrate 400. The patterning slit sheet 150 may be formed to be spaced apart from the substrate 400 to move relatively. In addition, in order to solve a shadow problem generated when the patterning slit sheet 150 and the substrate 400 are spaced apart, the blocking plate 131 between the deposition source nozzle unit 120 and the patterning slit sheet 150. By providing the straightness of the deposition material to provide a, it is possible to significantly reduce the size of the shadow (shadow) formed on the substrate.

In detail, in the conventional FMM deposition method, a deposition process was performed by closely attaching a mask to a substrate in order to prevent shadows on the substrate. However, when the mask is in close contact with the substrate as described above, there has been a problem that a defect problem occurs due to contact between the substrate and the mask. Also, since the mask cannot be moved relative to the substrate, the mask must be formed to the same size as the substrate. Therefore, as the display device becomes larger, the size of the mask must be increased, but there is a problem that it is not easy to form such a large mask.

In order to solve such a problem, in the thin film deposition assembly 100 according to the exemplary embodiment of the present invention, the patterning slit sheet 150 is disposed to be spaced apart from the substrate 400, which is the deposition target, at a predetermined interval. This can be realized by providing the blocking plate 131 so that the shadow generated on the substrate 400 is reduced.

According to the present invention, after forming the mask smaller than the substrate, it is possible to perform the deposition while moving the mask with respect to the substrate, it is possible to obtain the effect that the mask fabrication becomes easy. Moreover, the effect which prevents the defect by the contact between a board | substrate and a mask can be acquired. In addition, since the time for bringing the substrate into close contact with the mask is unnecessary in the step, an effect of increasing the manufacturing speed can be obtained.

The heat dissipation unit 160 may be disposed on the patterning slit sheet 150. The heat dissipation unit 160 may be disposed on a surface of the patterning slit sheet 150 facing the deposition source 110. In detail, the patterning slit sheet 150 may be alternately formed with the patterning bar 152 and the patterning slit 151, which is an opening, and the heat dissipation unit 160 may be disposed on the patterning bar 152. The width t1 of the heat dissipation unit 160 may be less than or equal to the width t2 of the patterning bar 152.

The heat dissipation unit 160 may remove the deposition material deposited on the patterning slit sheet 150 by heating the patterning slit sheet 150. Specifically, according to the deposition process by the thin film deposition apparatus 100 according to an embodiment of the present invention, the deposition material 115 emitted from the deposition source 110 is the patterning slit 151 of the patterning slit sheet 150 2) may be deposited on the substrate 400, which is a deposit, and part of the deposition may be deposited on the patterning bar 152 of the patterning slit sheet 150. While the deposition material 115 is stopped radiating from the deposition source 110 during the deposition process, the heat dissipation unit 160 heats the patterning slit sheet 150 above the evaporation temperature of the deposition material 115 to form a patterning bar ( Deposition material deposited on 152 may be removed. That is, the thin film deposition apparatus 100 according to the exemplary embodiment of the present invention stops the radiation of the deposition material 115 during the deposition process and then patterning the slit sheet 150 by the heat dissipation unit 160 in a chamber (not shown). May be heated to evaporate and remove the deposited material deposited on the patterning bar 152 and again deposit the deposited material 115 to deposit the deposited material on the substrate 400.

Accordingly, the thin film deposition apparatus 100 according to an embodiment of the present invention can remove the deposition material deposited on the patterning slit sheet 150 in the chamber, thereby removing and cleaning the patterning slit sheet 150. Since the cleaning process is unnecessary, the thin film deposition process can be simplified, and the deposition material deposited on the patterning slit sheet 150 can be removed by placing emphasis on the emission of the deposition material even during the deposition process, thereby effectively preventing the patterning slit 151 from clogging. It can prevent. In addition, since the deposition material evaporated by the heating of the heat dissipation unit 160 is deposited on the blocking plate assembly 130 again, the deposition material deposited on the blocking plate assembly 130 may be recovered and recycled to increase the material utilization efficiency. You can.

The heat dissipation unit 160 may maintain the temperature of the patterning slit sheet 150 after heating the patterning slit sheet 150. The patterning slit sheet 150 whose temperature is kept constant after heating is kept constant, and when the expanded patterning slit sheet 150 and the substrate 400 are aligned, the uniformity of the deposition pattern decreases due to thermal expansion. Can be prevented.

The heat dissipation unit 160 may be a coil heater or a thin film heater.

6 is a plan view schematically showing a thin film deposition apparatus according to another embodiment of the present invention.

Referring to FIG. 6, the thin film deposition apparatus 200 illustrated in FIG. 6 may further include an insulating member 161 as compared to the thin film deposition apparatus 100 illustrated in FIG. 5. The insulating member 161 may be disposed between the heat dissipation unit 150 and the patterning slit sheet 150.

In the following, the size of the shadow formed with and without the blocking plate is compared in detail.

7A is a view schematically showing a state in which a deposition material is being deposited in a thin film deposition assembly according to an exemplary embodiment of the present invention, and FIG. 7B is a shade generated when a deposition space is separated by a blocking plate as shown in FIG. 7A. FIG. 7C is a diagram illustrating a shadow that occurs when the deposition space is not separated.

Referring to FIG. 7A, the deposition material vaporized in the deposition source 110 is deposited on the substrate 400 through the deposition source nozzle unit 120 and the patterning slit sheet 150. In this case, since the space between the deposition source nozzle unit 120 and the patterning slit sheet 150 is partitioned into a plurality of deposition spaces S by the blocking plates 131, the deposition source nozzles are formed by the blocking plate 131. The deposition material from each deposition source nozzle 121 of the portion 120 is not mixed with the deposition material from another deposition source nozzle 121.

When the space between the deposition source nozzle unit 120 and the patterning slit sheet 150 is partitioned by the blocking plate assembly 130, as shown in FIG. 6B, the deposition materials are at an angle of about 55 ° to 90 °. It passes through the furnace patterning slit sheet 150 and is deposited on the substrate 400. That is, the incident angle of the deposition material passing through the patterning slit 151 next to the blocking plate assembly 130 is about 55 °, and the incident angle of the deposition material passing through the patterning slit 151 of the central portion is the substrate 400. Almost perpendicular to In this case, the width SH ₁ of the shaded region generated in the substrate 400 is determined by Equation 1 below.

(s = distance between the patterned slit sheet and the substrate, d _s = width of the deposition source nozzle,

h = distance between deposition source and patterning slit sheet)

On the other hand, when the space between the deposition source nozzle portion and the patterning slit sheet is not partitioned by the blocking plates, as illustrated in FIG. 6C, the deposition materials may be formed at various angles in a wider range than in FIG. 6B. Will pass. That is, in this case, not only the deposition material radiated from the deposition source nozzle directly above the patterning slit, but also the deposition materials radiated from another deposition source nozzle are deposited on the substrate 400 through the patterning slit, The width of the formed shaded area SH ₂ becomes very large compared with the case where the blocking plate is provided. In this case, the width SH ₂ of the shaded region generated in the substrate 400 is determined by Equation 2 below.

(s = distance between the patterned slit sheet and the substrate, d = distance between neighboring blocking plates,

h = distance between deposition source and patterning slit sheet)

When comparing Equation 1 and Equation 2, d (interval between neighboring blocking plates) is formed to be much larger than several times several tens more than d _s (width of the evaporation source nozzle), so that the evaporation source nozzle unit 120 If the space between the) and the patterning slit sheet 150 is partitioned by the blocking plates 131, it can be seen that the shading is much smaller. Here, in order to reduce the width (SH ₂ ) of the shaded area generated in the substrate 400, (1) reduce the interval between the blocking plate 131 is installed (d reduction), or (2) the patterning slit sheet 150 The distance between the substrate 400 and the substrate 400 should be reduced (s reduced) or (3) the height of the blocking plate 131 should be increased (h increased).

As such, by providing the blocking plate 131, the shadow generated on the substrate 400 may be reduced, and thus the patterning slit sheet 150 may be spaced apart from the substrate 400.

8 is a perspective view schematically showing a thin film deposition assembly according to another embodiment of the present invention.

Referring to FIG. 8, a thin film deposition assembly 500 according to another embodiment of the present invention may include a deposition source 510, a deposition source nozzle unit 520, a first blocking plate assembly 530, and a second blocking plate assembly ( 540, the patterning slit sheet 550, and the substrate 400.

Here, although the chamber is not shown in FIG. 8 for convenience of description, all the components of FIG. 8 are preferably disposed in a chamber in which an appropriate degree of vacuum is maintained. This is to ensure the straightness of the deposition material.

In such a chamber (not shown), a substrate 400, which is a deposition target, may be disposed. In addition, a deposition source 510 in which the deposition material 515 is received and heated may be disposed on a side opposite to the substrate 400 in the chamber (not shown). The deposition source 510 may include a crucible 511 and a heater 512.

The deposition source nozzle unit 520 may be disposed on one side of the deposition source 510, in detail, the side of the deposition source 510 facing the substrate 400. In addition, a plurality of deposition source nozzles 521 may be formed in the deposition source nozzle unit 520 along the X-axis direction.

One side of the deposition source nozzle unit 520 may be provided with a first blocking plate assembly 530. The first blocking plate assembly 530 may include a plurality of first blocking plates 531 and a first blocking plate frame 532 disposed outside the first blocking plates 531.

One side of the first blocking plate assembly 530 may be provided with a second blocking plate assembly 540. The second blocking plate assembly 540 may include a plurality of second blocking plates 541 and a second blocking plate frame 542 provided outside the second blocking plates 541.

The patterning slit sheet 550 and the patterning slit sheet frame 555 may be further provided between the deposition source 510 and the substrate 400. The patterning slit sheet frame 555 is formed in a lattice shape, such as a window frame, and the patterning slit sheet 550 may be coupled to the inside thereof. In addition, a plurality of patterning slits 551 may be formed in the patterning slit sheet 550 along the X-axis direction.

Here, the thin film deposition assembly 500 according to the second embodiment of the present invention is characterized in that the blocking plate assembly is separated into the first blocking plate assembly 530 and the second blocking plate assembly 540.

In detail, the plurality of first blocking plates 531 may be provided parallel to each other along the X-axis direction. The plurality of first blocking plates 531 may be formed at equal intervals. In addition, each first blocking plate 531 may be formed to be parallel to the YZ plane when viewed in the drawing, that is, perpendicular to the X-axis direction.

In addition, the plurality of second blocking plates 541 may be provided in parallel with each other along the X-axis direction. The plurality of second blocking plates 541 may be formed at equal intervals. Also, each second blocking plate 541 may be formed to be parallel to the YZ plane when viewed in the drawing, that is, perpendicular to the X-axis direction.

The plurality of first blocking plates 531 and the second blocking plates 541 disposed as described above may serve to partition a space between the deposition source nozzle unit 520 and the patterning slit sheet 550. Here, in the thin film deposition assembly 500 according to the second embodiment of the present invention, the deposition source nozzles 521 through which the deposition material is sprayed by the first blocking plate 531 and the second blocking plate 541. It is characterized in that the deposition space is separated by.

Here, each of the second blocking plates 541 may be disposed to correspond one-to-one with each of the first blocking plates 531. In other words, each of the second blocking plates 541 may be aligned with each of the first blocking plates 531 and disposed parallel to each other. That is, the first blocking plate 531 and the second blocking plate 541 corresponding to each other may be disposed on the same plane. As such, the space between the deposition source nozzle unit 520 and the patterning slit sheet 550 to be described later is partitioned by the first blocking plates 531 and the second blocking plates 541 arranged side by side. The deposition material discharged from one deposition source nozzle 521 may be deposited on the substrate 400 through the patterning slit 551 without being mixed with the deposition materials discharged from the other deposition source nozzle 521. . In other words, the first blocking plates 531 and the second blocking plates 541 guide the movement path in the X-axis direction of the deposition material so that the deposition material discharged through the deposition source nozzle 521 is not dispersed. Can be done.

In the drawing, although the length of the first blocking plate 531 and the width of the second blocking plate 541 in the X-axis direction are the same, the spirit of the present invention is not limited thereto. That is, the second blocking plate 541 which requires precise alignment with the patterning slit sheet 550 is formed relatively thin, while the first blocking plate 531 that does not require precise alignment is relatively thin. It will also be possible to form thick, so that the production is easy.

9 is a perspective view schematically showing a thin film deposition apparatus according to another embodiment of the present invention, FIG. 10 is a schematic side view of the thin film deposition apparatus of FIG. 9, and FIG. 11 is a schematic view of the thin film deposition apparatus of FIG. 9. Top view.

9, 10, and 11, the thin film deposition apparatus 600 according to the exemplary embodiment of the present invention includes a deposition source 610, a deposition source nozzle unit 620, and a patterning slit sheet 650. .

Here, although the chambers are not shown in FIGS. 9, 10, and 11 for convenience of description, all the components of FIGS. 9 to 11 are preferably disposed in a chamber in which an appropriate degree of vacuum is maintained. This is to ensure the straightness of the deposition material.

In detail, in order for the deposition material 615 emitted from the deposition source 610 to pass through the deposition source nozzle portion 620 and the patterning slit sheet 650 to be deposited on the substrate 400 in a desired pattern, a chamber (not shown) is basically used. The inside must maintain the same high vacuum as the FMM deposition method. In addition, the temperature of the patterning slit sheet 650 should be sufficiently lower than the temperature of the deposition source 610 (about 100 ° or less). This is because the thermal expansion problem of the patterning slit sheet 650 due to the temperature can be minimized only when the temperature of the patterning slit sheet 650 is sufficiently low.

In such a chamber (not shown), a substrate 400 which is a deposition target is disposed. The substrate 400 may be a substrate for a flat panel display, and a large area substrate such as a mother glass capable of forming a plurality of flat panel displays may be applied.

Here, in one embodiment of the present invention, the substrate 400 is characterized in that the deposition proceeds while moving relative to the thin film deposition apparatus 600.

In detail, in the conventional FMM deposition method, the FMM size should be formed to be the same as the substrate size. Therefore, as the substrate size increases, the FMM needs to be enlarged. As a result, there is a problem that it is not easy to manufacture the FMM, and it is not easy to align the FMM to a precise pattern.

In order to solve this problem, the thin film deposition apparatus 600 according to an embodiment of the present invention is characterized in that the deposition is performed while the thin film deposition apparatus 100 and the substrate 400 move relative to each other. In other words, the substrate 400 disposed to face the thin film deposition apparatus 600 moves continuously along the Y-axis direction to continuously perform deposition. That is, deposition is performed by scanning while the substrate 400 moves in the direction of arrow A in FIG. 1. Here, although the substrate 400 is shown to be deposited while moving in the Y-axis direction in the chamber (not shown), the spirit of the present invention is not limited thereto, the substrate 400 is fixed and thin film deposition It will also be possible to perform deposition while the device 600 itself moves in the Y-axis direction.

Therefore, in the thin film deposition apparatus 600 of the present invention, the patterning slit sheet 650 can be made much smaller than the conventional FMM. That is, in the case of the thin film deposition apparatus 600 of the present invention, since the substrate 400 moves along the Y-axis direction and performs deposition continuously, that is, by scanning, the X of the patterning slit sheet 650 The length in the axial direction and the Y-axis direction may be formed to be much smaller than the length of the substrate 400. Thus, since the patterning slit sheet 650 can be made much smaller than the conventional FMM, the patterning slit sheet 650 of the present invention is easy to manufacture. That is, in all processes, such as etching of the patterning slit sheet 650, subsequent fine tensioning and welding operations, moving and cleaning operations, the small-sized patterning slit sheet 650 is advantageous over the FMM deposition method. In addition, this becomes more advantageous as the display device becomes larger.

As described above, in order for deposition to occur while the thin film deposition apparatus 600 and the substrate 400 move relative to each other, the thin film deposition apparatus 600 and the substrate 400 may be spaced apart from each other to some extent. This will be described later in detail.

Meanwhile, a deposition source 610 in which the deposition material 615 is received and heated is disposed on the side of the chamber that faces the substrate 400. As the deposition material 615 stored in the deposition source 610 is vaporized, deposition is performed on the substrate 400.

In detail, the deposition source 610 is a crucible 611 filled with the deposition material 615 therein, and a deposition material 615 filled inside the crucible 611 by heating the crucible 611. One side, in detail, comprises a heater 112 for evaporating to the deposition source nozzle unit 620 side.

The deposition source nozzle unit 620 is disposed on one side of the deposition source 610, in detail, the side of the deposition source 610 facing the substrate 400. In addition, a plurality of deposition source nozzles 621 are formed in the deposition source nozzle unit 620 along the Y-axis direction, that is, the scanning direction of the substrate 400. Here, the plurality of deposition source nozzles 621 may be formed at equal intervals. The evaporation material 615 vaporized in the evaporation source 610 passes through the evaporation source nozzle unit 620 and is directed toward the substrate 400, which is an evaporation target. As described above, when the plurality of deposition source nozzles 621 are formed on the deposition source nozzle unit 620 along the Y-axis direction, that is, the scanning direction of the substrate 400, each patterning slit of the patterning slit sheet 650 ( The size of the pattern formed by the deposition material passing through 651 is only affected by the size of one deposition source nozzle 621 (ie, there is only one deposition source nozzle 621 in the X-axis direction). Shadows will not occur. In addition, since a plurality of deposition source nozzles 621 are present in the scan direction, even if a flux difference between individual deposition source nozzles occurs, the difference is canceled to obtain an effect of maintaining a uniform deposition uniformity.

Meanwhile, a patterning slit sheet 650 and a frame 655 are further provided between the deposition source 610 and the substrate 400. The frame 155 is formed in the shape of a window frame, and the patterning slit sheet 650 is coupled to the inside thereof. The patterning slit sheet 650 is formed with a plurality of patterning slits 651 along the X-axis direction. The deposition material 615 vaporized in the deposition source 610 passes through the deposition source nozzle 620 and the patterning slit sheet 650 to be directed toward the substrate 400, which is the deposition target. In this case, the patterning slit sheet 650 may be manufactured by etching, which is the same method as a method of manufacturing a conventional fine metal mask (FMM), in particular, a stripe type mask. In this case, the total number of patterning slits 651 may be greater than the total number of deposition source nozzles 621.

Meanwhile, the deposition source 610, the deposition source nozzle unit 620, and the patterning slit sheet 650, which are coupled to the deposition source 610 and the patterning slit sheet 650, may be formed to be spaced apart from each other by a predetermined amount, and the deposition source 610 (and deposition coupled thereto). The one nozzle part 620 and the patterning slit sheet 650 may be connected to each other by the connecting member 635. That is, the deposition source 610, the deposition source nozzle unit 620, and the patterning slit sheet 650 may be connected by the connection member 635 to be integrally formed with each other. The connection members 635 may guide the movement path of the deposition material so that the deposition material discharged through the deposition source nozzle 621 is not dispersed. In the drawing, the connecting member 635 is formed only in the left and right directions of the deposition source 610, the deposition source nozzle unit 620, and the patterning slit sheet 650 to guide only the X-axis direction of the deposition material. For convenience of illustration, the spirit of the present invention is not limited thereto, and the connection member 635 may be formed in a sealed shape in a box shape to simultaneously guide the X-axis direction and the Y-axis movement of the deposition material.

As described above, the thin film deposition apparatus 600 according to the exemplary embodiment of the present invention performs deposition while moving relative to the substrate 400, and thus the thin film deposition apparatus 600 with respect to the substrate 400. The patterning slit sheet 650 is formed to be spaced apart from the substrate 400 to move relatively.

In detail, in the conventional FMM deposition method, a deposition process was performed by closely attaching a mask to a substrate in order to prevent shadows on the substrate. However, when the mask is in close contact with the substrate as described above, there has been a problem that a defect problem occurs due to contact between the substrate and the mask. Also, since the mask cannot be moved relative to the substrate, the mask must be formed to the same size as the substrate. Therefore, as the display device becomes larger, the size of the mask must be increased, but there is a problem that it is not easy to form such a large mask.

In order to solve such a problem, in the thin film deposition apparatus 600 according to the exemplary embodiment of the present invention, the patterning slit sheet 650 is disposed to be spaced apart from the substrate 400, which is the deposition target.

According to the present invention, after forming the mask smaller than the substrate, it is possible to perform the deposition while moving the mask with respect to the substrate, it is possible to obtain the effect that the mask fabrication becomes easy. Moreover, the effect which prevents the defect by the contact between a board | substrate and a mask can be acquired. In addition, since the time for bringing the substrate into close contact with the mask is unnecessary in the step, an effect of increasing the manufacturing speed can be obtained.

The heat dissipation part 660 may be disposed on the patterning slit sheet 650. The heat dissipation unit 660 may be disposed on a surface of the patterning slit sheet 650 facing the deposition source 610. In detail, the patterning slit sheet 650 may be alternately formed with the patterning rib 652 and the patterning slit 651 which is an opening, and the heat dissipation part 660 may be disposed on the patterning rib 652. The width t1 of the heat dissipation portion 660 may be less than or equal to the width t2 of the patterning rib 652.

The heat dissipation unit 660 may heat the patterning slit sheet 650 to remove the deposition material deposited on the patterning slit sheet 650. Specifically, according to the deposition process by the thin film deposition apparatus 600 according to an embodiment of the present invention, the deposition material 615 emitted from the deposition source 610 is the patterning slit 651 of the patterning slit sheet 650 May be deposited on the substrate 400, which is a deposit, and a portion may be deposited on the patterning rib 652 of the patterning slit sheet 650. While the deposition material 615 is stopped radiating from the deposition source 610 during the deposition process, the heat dissipation unit 660 heats the patterning slit sheet 650 above the evaporation temperature of the deposition material 615 to form a patterning rib ( Deposition material deposited on 652 may be removed. That is, the thin film deposition apparatus 600 according to the exemplary embodiment of the present invention stops the radiation of the deposition material 615 during the deposition process and then patterning the slit sheet 650 by the heat dissipation unit 660 in a chamber (not shown). May be heated to evaporate to remove the deposited material deposited on the patterning rib 652 and again to deposit the deposited material 615 to deposit the deposited material on the substrate 400.

Accordingly, the thin film deposition apparatus 600 according to an embodiment of the present invention can remove the deposition material deposited on the patterning slit sheet 650 in the chamber, thereby removing and cleaning the patterning slit sheet 650. Since the cleaning process is unnecessary, the thin film deposition process may be simplified, and the deposition material deposited on the patterning slit sheet 650 may be removed by placing emphasis on the emission of the deposition material even during the deposition process, thereby effectively preventing the patterning slit 651 from clogging. It can prevent. In addition, since the deposition material evaporated by the heating of the heat dissipation unit 660 is deposited on the connection member 635 again, the deposition material deposited on the connection member 635 may be recovered and recycled to increase the material utilization efficiency. have.

The heat dissipation unit 660 may maintain the temperature of the patterning slit sheet 650 after heating the patterning slit sheet 650. The patterning slit sheet 650 in which the temperature is kept constant after heating is kept constant, and when the expanded patterning slit sheet 650 and the substrate 400 are aligned, the uniformity of the deposition pattern decreases due to thermal expansion. Can be prevented.

The radiator 660 may be a coil heater or a thin film heater.

12 is a plan view schematically showing a thin film deposition apparatus according to another embodiment of the present invention.

Referring to FIG. 12, the thin film deposition apparatus 600a illustrated in FIG. 12 may further include an insulating member 661 as compared with the thin film deposition apparatus 600 illustrated in FIG. 11. The insulating member 661 may be disposed between the heat dissipation unit 650 and the patterning slit sheet 650.

13 is a view showing a thin film deposition apparatus according to another embodiment of the present invention. Referring to FIG. 13, the thin film deposition apparatus 700 according to another embodiment of the present invention includes a deposition source 710, a deposition source nozzle unit 720, and a patterning slit sheet 750. Here, the deposition source 710 may be a crucible 711 filled with a deposition material 715 therein, and a deposition source 715 filled with the crucible 711 by heating the crucible 711. A heater 712 for evaporating to the 720 side. Meanwhile, a deposition source nozzle unit 720 is disposed at one side of the deposition source 710, and a plurality of deposition source nozzles 721 are formed in the deposition source nozzle unit 720 along the Y-axis direction. Meanwhile, a patterning slit sheet 750 and a frame 755 are further provided between the deposition source 710 and the substrate 400, and the patterning slit sheet 750 includes a plurality of patterning slits 751 along the X-axis direction. Is formed. In addition, the deposition source 710, the deposition source nozzle unit 720, and the patterning slit sheet 750 are coupled by the connection member 735.

In the present exemplary embodiment, the plurality of deposition source nozzles 721 formed in the deposition source nozzle unit 720 are arranged at a predetermined angle and are distinguished from the embodiment shown in FIG. 9 described above. In detail, the deposition source nozzles 721 may be formed of two rows of deposition source nozzles 721a and 721b, and the two rows of deposition source nozzles 721a and 721b are alternately disposed. In this case, the deposition source nozzles 721a and 721b may be tilted to be inclined at a predetermined angle on the XZ plane.

Here, the deposition source nozzles 721a in the first row are tilted to face the deposition source nozzles 721b in the second row, and the deposition source nozzles 721b in the second row are tilted to face the deposition source nozzles 721a in the first row. Can be. In other words, the deposition source nozzles 721a arranged in the left column face the right end of the patterning slit sheet 750, and the deposition source nozzles 721b arranged in the right column refer to the left end of the patterning slit sheet 750. It can be arranged to look at.

FIG. 14 is a view schematically illustrating a distribution form of a deposition film deposited on a substrate when the deposition source nozzle is not tilted in the thin film deposition apparatus according to the present invention, and FIG. 15 illustrates a deposition source nozzle in the thin film deposition apparatus according to the present invention. It is a figure which shows the distribution form of the vapor deposition film deposited on a board | substrate when tilting. Comparing FIG. 14 with FIG. 15, it can be seen that when the deposition source nozzle is tilted, the thickness of the deposition film deposited on both ends of the substrate is relatively increased, thereby increasing the uniformity of the deposition film.

By such a configuration, the difference in film thickness at the center and the end of the substrate is reduced, so that the deposition amount can be controlled so that the thickness of the entire deposition material is uniform, and further, the material utilization efficiency can be increased. .

The present invention is not limited by the above-described embodiment and the accompanying drawings, but is intended to be limited by the appended claims, and various forms of substitution, modification, and within the scope not departing from the technical spirit of the present invention described in the claims. It will be apparent to those skilled in the art that changes are possible.

30: pixel region 40: circuit region
50 substrate 51 buffer layer
52: active layer 53 gate insulating film
54 gate electrode 55 interlayer insulating film
56/57: source / drain electrodes
61: pixel electrode 63: counter electrode
62: organic film 100: thin film deposition assembly
110: deposition source 120: deposition source nozzle
130: blocking plate assembly 150: patterning slit sheet
160: heat dissipation unit 400: substrate

Claims (35)

In the thin film deposition apparatus for forming a thin film on a substrate,
A deposition source for emitting a deposition material;
A deposition source nozzle unit disposed on one side of the deposition source and having a plurality of deposition source nozzles formed along a first direction;
A patterning slit sheet disposed to face the deposition source and having a plurality of patterning slits formed along the first direction;
A heat dissipation unit disposed on the patterning slit sheet; And
A plurality of blocking plates disposed in the first direction between the deposition source nozzle part and the patterning slit sheet and partitioning a space between the deposition source nozzle part and the patterning slit sheet into a plurality of deposition spaces; A blocking plate assembly;
The thin film deposition apparatus is formed to be spaced apart from the substrate by a predetermined degree,
The thin film deposition apparatus and the substrate, the thin film deposition apparatus, characterized in that any one side is formed to be relatively movable relative to the other side. The method of claim 1,
And the heat dissipation unit is disposed on the patterning slit sheet facing the deposition source. The method of claim 1,
And the heat dissipation unit heats the patterning slit sheet to remove the deposition material deposited on the patterning slit sheet. The method of claim 3,
The heat dissipation unit is a thin film deposition apparatus, characterized in that for heating the patterning slit sheet above the evaporation temperature of the deposition material. The method of claim 1,
And the heat dissipation unit heats the patterning slit sheet while the deposition source stops radiating the deposition material. The method of claim 1,
The heat dissipation unit is a thin film deposition apparatus, characterized in that for maintaining the patterning slit sheet at a constant temperature after heating the patterning slit sheet. The method of claim 1,
The heat dissipation unit is a thin film deposition apparatus, characterized in that the coil heater. The method of claim 1,
The heat dissipation unit is a thin film deposition apparatus, characterized in that the thin film heater. The method of claim 1,
The thin film deposition apparatus further comprises an insulating member between the heat dissipation unit and the patterning slit sheet. The method of claim 1,
The patterning slit sheet further includes a patterning rib disposed between the patterning slits adjacent to each other,
And the heat dissipation unit is disposed on the patterning rib. The method of claim 1,
Each of the plurality of blocking plates is formed in a second direction substantially perpendicular to the first direction to divide the space between the deposition source nozzle unit and the patterning slit sheet into a plurality of deposition spaces. Thin film deposition apparatus. The method of claim 1,
Thin film deposition apparatus, characterized in that the plurality of blocking plates are arranged at equal intervals. The method of claim 1,
And the blocking plates and the patterning slit sheet are formed to be spaced apart at a predetermined interval. The method of claim 1,
The blocking plate assembly may include a first blocking plate assembly including a plurality of first blocking plates and a second blocking plate assembly including a plurality of second blocking plates. The method of claim 14,
Each of the plurality of first blocking plates and the plurality of second blocking plates is formed in a second direction substantially perpendicular to the first direction, thereby providing a plurality of spaces between the deposition source nozzle part and the patterning slit sheet. Thin film deposition apparatus characterized by partitioning into two deposition spaces. The method of claim 14,
The thin film deposition apparatus of claim 1, wherein each of the plurality of first blocking plates and the plurality of second blocking plates is disposed to correspond to each other. The method of claim 16,
The thin film deposition apparatus of claim 1, wherein the first blocking plate and the second blocking plate corresponding to each other are disposed on substantially the same plane. In the thin film deposition apparatus for forming a thin film on a substrate,
A deposition source for emitting a deposition material;
A deposition source nozzle unit disposed on one side of the deposition source and having a plurality of deposition source nozzles formed along a first direction;
A patterning slit sheet disposed to face the deposition source nozzle unit and having a plurality of patterning slits formed along a second direction perpendicular to the first direction; And
And a heat dissipation unit disposed on the patterning slit sheet.
Deposition is performed while the substrate moves along the first direction with respect to the thin film deposition apparatus,
And the deposition source, the deposition source nozzle unit, and the patterning slit sheet are integrally formed. The method of claim 18,
And the heat dissipation unit is disposed on the patterning slit sheet facing the deposition source. The method of claim 18,
And the heat dissipation unit heats the patterning slit sheet to remove the deposition material deposited on the patterning slit sheet. The method of claim 20,
The heat dissipation unit is a thin film deposition apparatus, characterized in that for heating the patterning slit sheet above the evaporation temperature of the deposition material. The method of claim 18,
And the heat dissipation unit heats the patterning slit sheet while the deposition source stops radiating the deposition material. The method of claim 18,
The heat dissipation unit is a thin film deposition apparatus, characterized in that for maintaining the patterning slit sheet at a constant temperature after heating the patterning slit sheet. The method of claim 18,
The heat dissipation unit is a thin film deposition apparatus, characterized in that the coil heater. The method of claim 18,
The heat dissipation unit is a thin film deposition apparatus, characterized in that the thin film heater. The method of claim 18,
The thin film deposition apparatus further comprises an insulating member between the heat dissipation unit and the patterning slit sheet. The method of claim 18,
The patterning slit sheet further includes a patterning rib disposed between the patterning slits adjacent to each other,
And the heat dissipation unit is disposed on the patterning rib. The method of claim 18,
And the deposition source nozzle unit and the patterning slit sheet are integrally formed by a coupling member. The method of claim 28,
The connecting member is a thin film deposition apparatus, characterized in that for guiding the movement path of the deposition material. The method of claim 28,
And the connection member is formed to seal a space between the deposition source and the deposition source nozzle unit and the patterning slit sheet from the outside. The method of claim 18,
The thin film deposition apparatus is formed to be spaced apart from the substrate by a predetermined degree. The method of claim 18,
And the deposition material is continuously deposited on the substrate while the substrate moves in the first direction with respect to the thin film deposition apparatus. The method of claim 18,
And the patterning slit sheet of the thin film deposition apparatus is smaller than the substrate. In the method of manufacturing an organic light emitting display device using a thin film deposition apparatus for forming a thin film on a substrate,
Disposing the substrate to a predetermined distance from the thin film deposition apparatus; And
And depositing a deposition material radiated from the thin film deposition apparatus on the substrate while one side of the thin film deposition apparatus and the substrate is relatively moved with respect to the other side. The method of claim 34, wherein
Depositing the deposition material on the substrate,
And the deposition material radiated from the thin film deposition apparatus is continuously deposited on the substrate while the substrate is moved relative to the thin film deposition apparatus.

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