KR20110008791A - Composition for cleaning substrate and cleaning method of substrate using the same - Google Patents

Abstract

PURPOSE: A composition for cleaning a substrate is provided to minimize minute particles remaining in a deep part such as the surface of a substrate and/or viahole during or after cutting processes and to prevent surface cracks or chipping phenomenon. CONSTITUTION: A composition for cleaning a substrate includes a non-ionic surfactant represented by R1-[(EO)x-(PO)y]z-R2, ultra-pure water, and two kinds or more of additives selected from the group consisting of polyethylene glycol, antioxidant, metal corrosion inhibitor and PH buffer agent. In chemical formula, EO is (-CH2-CH2-O-), PO is propylene oxide(-CH(CH3)-CH2-O-) or methylpropyleneoxide(-CH2-CH(CH3)-CH2-O-), and x, and y and z are respectively an integer of 1 ~ 40.

Description

COMPOSITION FOR CLEANING SUBSTRATE AND CLEANING METHOD OF SUBSTRATE USING THE SAME

The present invention relates to a cleaning liquid composition used to clean a substrate and a method of cleaning a substrate using the same.

In general, a cutting process of a substrate such as a wafer is a process that requires high precision as a process of cutting a plurality of chips on a substrate along a strip line to separate the chips into individual chips. In the case of such a substrate cutting process, fine particles may be generated from the substrate to be cut and contaminate the substrate, which in turn directly affects the performance and yield of the semiconductor device. Thus, a process of cleaning the substrate after or at the same time as the cutting of the substrate is performed.

In detail, the cutting process of the substrate may include fixing the substrate to a frame to fit a portion to be loaded and cut into the cutting device; And cutting the fixed substrate using a preprogrammed blade according to the thickness and separation line of the substrate. Here, in order to prevent substrate contamination by the fine particles generated from the substrate due to the cutting of the substrate, conventionally, using the blade to remove the fine particles generated due to cutting by using high pressure ultrapure water or a cleaning solution when cutting the substrate. .

However, in the case of the conventionally known cleaning solution or ultrapure water, fine particles generated during cutting could not be properly removed. For this reason, the fine particles remaining in the surface of the substrate or via hole are located in the deep part of the cutting line after the cutting blade passes, and thus the bonding defect in the wire bonding process or the molding defect in the resin molding process. It has been a cause of various defects.

In addition, in the case of the conventionally known cleaning solution, it is not possible to prevent the substrate surface cracking or chipping phenomena occurring during the cutting of the substrate, and also the metal wiring or cutting equipment of the substrate is corroded by the cleaning solution. Occurred.

The present inventors, as a component of the cleaning liquid composition, when using two or more additives in polyethylene glycol, antioxidants, metal corrosion inhibitors and pH buffers together with ultrapure water and a nonionic surfactant represented by the following formula (1), This not only reduces the proportion of fine particles remaining in deep portions such as the substrate surface and / or via holes to a minimum, but also prevents surface cracking or chipping that occurs on the substrate surface during cutting of the substrate. It has been found that it is possible to prevent the corrosion of metal wiring and cutting equipment. The present invention is based on this.

The present invention (a) a nonionic surfactant represented by the formula (1); (b) ultrapure water; And (c) at least two additives selected from the group consisting of polyethylene glycol, antioxidants, metal corrosion inhibitors and pH buffers.

[Formula 1]

R ₁ -[(EO) _x- (PO) _y ] _z -R ₂

(In Formula 1, EO is ethylene oxide (-CH ₂ -CH ₂ -O-), PO is propylene oxide (-CH (CH ₃ ) -CH ₂ -O-) or methyl propylene oxide (-CH ₂ -CH (CH ₃ ) -CH ₂ -O-), wherein EO and PO are combined by random addition or two or more block additions, and the sequence order of the x EO and y PO is arbitrary, and x , y and z are each independently an integer of 1 to 40, x / (x + y) is an integer of 0.1 to 0.8, wherein R ₁ and R ₂ are each independently a hydrogen atom (-H), a hydroxyl group (- OH), a straight or branched alkyl group having 1 to 20 carbon atoms, a straight or branched alkenyl group having 1 to 20 carbon atoms).

The present invention also provides a method for cleaning a substrate that has been cut or cut using a cleaning liquid composition or a solution prepared by diluting the cleaning liquid composition 500-5,000 times with ultrapure water at the time of cutting or after cutting the substrate. It provides a method for cleaning a substrate comprising.

The cleaning liquid composition according to the present invention includes ultrapure water and at least two additives among polyethylene glycol, antioxidant, metal corrosion inhibitor and pH buffer together with the nonionic surfactant represented by the formula (1). After processing, the proportion of fine particles remaining in the deep surface such as the substrate surface and / or via holes can be reduced to a minimum.

In addition, the cleaning liquid composition of the present invention may prevent surface cracking or chipping phenomenon occurring on the surface of the substrate during cutting of the substrate, and further prevent corrosion of metal wires and cutting equipment on the substrate.

EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated.

In the present invention, a substrate is a plate on which an electric circuit is formed, and is a single crystal plate of silicon to which not only printed circuit boards, insulating boards, and the like but also circuits such as integrated circuits and high density integrated circuits are copied. It also means to include a wafer.

Cutting in the present invention is meant to include grinding, cutting, cutting and the like.

The cleaning liquid composition according to the present invention is a solution used to clean a substrate, comprising: (a) a nonionic surfactant represented by the following formula (1) and (b) ultrapure water, (c) polyethylene glycol, an antioxidant, And at least two additives among metal corrosion inhibitors and pH buffers.

When the cleaning liquid composition is used for cutting the substrate, the surface tension of the solution is lowered by the nonionic surfactant represented by the following Chemical Formula 1 included in the cleaning liquid composition, thereby improving wettability on the surface of the substrate. It is easy to remove fine particles adhered to the substrate surface and / or a portion such as via holes, and also prevent the fine particles from re-adhering to the substrate surface and / or via hole portions. In addition, the cleaning liquid composition prevents the occurrence of cracking and / or chipping of the substrate surface during cutting of the substrate due to the lubrication of polyethylene glycol, so that the substrate may be cut without the occurrence of cracking and / or chipping. In particular, it can effectively block progressive cracking and backside chipping to ensure product stability and improve yield. In addition, the cleaning liquid composition can prevent corrosion of metal wiring and cutting equipment of the substrate. In addition, since the pH of the cleaning solution composition may be about 6 to 9, and the pH of the cleaning solution composition may be maintained at about 6 to 9 even when the cleaning solution composition is used during the cleaning process of the substrate, metal corrosion due to the pH change of the cleaning solution composition However, problems such as deterioration of wettability and environmental pollution during disposal of the cleaning liquid composition do not occur.

The cleaning liquid composition according to the present invention includes a nonionic surfactant represented by the following Chemical Formula 1 as one component.

R ₁ -[(EO) _x- (PO) _y ] _z -R ₂

In Formula 1, EO is ethylene oxide (-CH ₂ -CH ₂ -O-), PO is propylene oxide (-CH (CH ₃ ) -CH ₂ -O-) or methyl propylene oxide (-CH ₂ -CH (CH ₃ ) -CH ₂ -O-), wherein EO and PO are combined by random addition or two or more block additions, and the sequence order of the x EO and y PO is arbitrary, and x, y and z are each independently an integer of 1 to 40, x / (x + y) is an integer of 0.1 to 0.8, wherein R ₁ and R ₂ are each independently a hydrogen atom (-H), hydroxyl group (-OH ), A linear or branched alkyl group having 1 to 20 carbon atoms, or a linear or branched alkenyl group having 1 to 20 carbon atoms.

Examples of the nonionic surfactant represented by Chemical Formula 1 include polyethylene oxide / polypropylene oxide (PEO-PPO), but are not limited thereto.

Such a nonionic surfactant is suitably in the range of 1,000 to 10,000 in weight average molecular weight in order to prevent a decrease in solubility and ensure uniformity of the cleaning liquid composition while preventing the interaction of the interfacial properties.

The cleaning liquid composition of the present invention contains ultrapure water. The ultrapure water is water close to the level that can be thought of as the purest compound which removes impurities such as salt and microorganisms in water through filtration, reverse osmosis, ion exchange, sterilization, etc. It can be used in ultra precision manufacturing process such as, LCD, semiconductor.

The cleaning liquid composition of the present invention contains at least two additives from polyethylene glycol, antioxidant, metal corrosion inhibitor and pH buffer, in addition to the ultrapure water and the nonionic surfactant represented by the formula (1).

In the present invention, the polyethylene glycol (PEG) may form a polymer oil film up to a minute portion of the metal surface, the polymer oil film formed is a strong lubrication on the metal contact surface such as the interface between the cutting edge and the substrate when cutting the substrate It can act to minimize the generation of frictional heat on the metal contact surface, it is possible to improve the life of the cutting blade.

The weight average molecular weight of such polyethylene glycol is preferably in the range of 10,000 to 200,000 for smoother lubrication and prevention of solubility deterioration.

In addition, the antioxidant reacts with unstable free radicals generated on the surface of the substrate due to oxidation during cleaning of the substrate using a cleaning liquid composition to form an inert material in a stable form and also inhibits a chain reaction to prevent oxidation of the substrate. Play a role. Non-limiting examples of such antioxidants include butylated hydroxy anisole (BHA), dibutyl hydroxy toluene (BHT), t-butyl hydroquinone (TBHQ), and the like. These may be used alone or in combination of two or more thereof.

In addition, the metal corrosion inhibitor serves to prevent the metal wiring or cutting equipment on the substrate from being corroded by the cleaning liquid composition when the substrate is cleaned by the cleaning liquid composition. Examples of such metal corrosion inhibitors include 1-ethylamino-2-octadecylimidazoline, di-sec-butylsulfide, and diphenylsulfoxide. , Benzoic acid, m-methylbenzoic acid, p-methylbenzoic acid, benzeneacetic acid, 2-ethylbenzoic acid, 3-ethyl Benzoic acid (3-ethylbenzoic acid), 2,3,5-trimethylbenzoic acid, cinnamic acid, hydrocinnamic acid, 4-methyl cinnamic acid (4- methylcinnamic acid, salicylic acid, 2-isopropylbenzoic acid, 3-isopropylbenzoic acid, 4-isopropylbenzoic acid, 4-isopropylbenzoic acid, benzenebutanoic acid ( benzenebutanoic acid), 2,4-dimethylphenyl acetic acid, 2- (4-methylphenyl) propanoic acid [2- (4-methylphenyl) propanoic acid], 4-propylbenzoic acid ( 4-propylbenzoic acid), 4-ethylphenyl acetic acid, 3-phenylbutanoic acid, 3- (2-methylphenyl) propanoic acid [3- (2-methylphenyl) propionic acid ], 3- (3-methylphenyl) propanoic acid [3- (3-methylphenyl) propionic acid], p-methylhydrocinnamic acid, 3-propylbenzoic acid, cresol ), Gallic acid, ethanolamine, methyl gallate, benzotriazoles, catechol, 1,2-di-hydroxy-benzene (1,2) -di-hydroxy-benzene), 2- (3,4-di-hydroxy-phenyl) -3,4-di-hydro-2H-1-benzopyran-3,5,7-triol [2- ( 3,4-di-hydroxy-phenyl) -3,4-di-hydro-2H-1-benzopyran-3,5,7-triol], but are not limited thereto, and these may be used alone or in combination of two or more thereof. Can be used.

In addition, in the present invention, in order to prevent the pH of the cleaning liquid composition from being changed during the cleaning process of the substrate due to the fine particles generated from the substrate during cutting of the substrate, a pH buffer consisting of an acid-paired base may be included in the cleaning liquid composition. Non-limiting examples of the pH buffer include sodium phosphate (NaH ₂ PO ₄ ) -dibasic sodium phosphate (Na ₂ HPO ₄ ), hydrofluoric acid (HF) -ammonium fluoride ((NH ₄ ) F), acetic acid (acetic acid) -sodium acetate (Sodium Acetate), ammonium formate (HCO ₂ NH ₄ )-ammonia water (NH ₄ OH) and the like. By using such a pH buffer, the pH of the cleaning liquid composition can be maintained in the range of about 6 to 9 even if the cleaning liquid composition of the present invention is still used for cleaning the substrate.

The present invention controls the content of the above-described ultrapure water, nonionic surfactants and two or more additives, in order to effectively prevent the cracking and chipping of the substrate and to prevent corrosion of metal wires and cutting devices while effectively cleaning the substrate during cutting of the substrate. do. That is, the cleaning solution composition of the present invention is a content of about 2 to 20% by weight of the non-ionic surfactant represented by the formula (1) relative to the total weight of the cleaning solution composition, the total of two or more additives of about 0.003 to 14% by weight As a content, ultrapure water may be included by the remaining amount to adjust the total weight of the cleaning liquid composition to 100% by weight. Here, the content of about 0.1 to 10% by weight when polyethylene glycol is included as one of the two or more additives, and the content of about 0.003 to 1% by weight when antioxidant is included as one of the two or more additives. When included as one of the two or more additives, the metal corrosion inhibitor is included in an amount of about 0.003 to 2% by weight, and when included in the pH buffer as one of the two or more additives of about 0.02 to 1 weight It is appropriate to include the content in%.

On the other hand, the present invention can provide a method for cleaning a substrate using the cleaning liquid composition described above. For example, the present invention may provide a method comprising cleaning a substrate to be cut using the cleaning liquid composition when cutting the substrate. In addition, the present invention may provide a method comprising the step of cleaning the cut substrate using the cleaning liquid composition after cutting the substrate.

Here, the cleaning liquid composition may be used by itself, or a solution prepared by diluting the cleaning liquid composition with ultrapure water may be used. At this time, the washing liquid may be diluted about 500 to 5,000 times by the ultrapure water.

When cleaning the substrate using the cleaning liquid composition or the diluent of the cleaning liquid composition in this way, the proportion of the fine particles remaining on the substrate can be reduced to a minimum, and furthermore, the surface of the substrate is protected by the cleaning liquid composition and cracks and chippings are generated. It can be suppressed and metal corrosion can be prevented.

Hereinafter, the present invention will be described in more detail with reference to Examples. However, the following examples are for illustrating the present invention, and the scope of the present invention is not limited thereto.

Example 1

6% by weight of polyethylene oxide / polypropyleneoxide (PEO-PPO, CAS number: 9003-11-6) as a nonionic surfactant, polyethylene glycol, PEG, CAS number: 25322-68-3 5 wt%, dibutylhydroxytoluene (BHT) 0.8 wt% as antioxidant, gallic acid as metal corrosion inhibitor, first sodium phosphate (NaH ₂ PO ₄ ) -dibasic sodium phosphate as pH buffer 0.5 wt% (Na ₂ HPO ₄ ) and 87.6 wt% of ultrapure water were mixed to prepare a cleaning liquid composition.

[ Example  2] to [ Example  5] and [ Comparative example  One]

As shown in Table 1 below, polyethylene oxide / polypropylene oxide (PEO-PPO), polyethylene glycol (PEG), dibutylhydroxytoluene (BHT), gallic acid, primary sodium phosphate (NaH ₂ PO ₄ ) — A cleaning solution composition was prepared in the same manner as in Example 1, except that the content of dibasic sodium phosphate (Na ₂ HPO ₄ ) and ultrapure water was changed.

PEO-PPO
(weight%) PEG
(weight%) BHT
(weight%) Garlic acid
(weight%) NaH ₂ PO ₄ -Na ₂ HPO ₄
(weight%) Ultrapure water
(weight%) Example 1 6.0 5.0 0.8 0.1 0.5 87.6 Example 2 3.0 5.0 0.8 0.1 0.5 90.6 Example 3 6.0 - 0.8 0.1 0.5 92.6 Example 4 6.0 5.0 - - 0.5 88.5 Example 5 6.0 5.0 0.8 0.1 - 88.1 Comparative Example 1 - - - - - 100.0

Experimental Example 1-Evaluation of Detergency According to Nonionic Surfactant Content

In order to know the degree of cleaning power according to the content of the nonionic surfactant of the cleaning liquid composition according to the present invention, the following experiment was performed.

Each of the cleaning liquid compositions prepared in Examples 1 and 2 and Comparative Example 1 was diluted 2,000 times with ultrapure water to prepare Solutions 1 and 2 and Comparative Solution 1. Subsequently, when cutting the wafer, the wafer to be cut was cleaned using the solutions 1 and 2 and the comparative solution 1, and then the degree of removal of aluminum fine particles remaining in the via-holes was measured using an optical microscope (X). 500). The experimental results thereof are shown in FIG. 1.

As shown in FIG. 1, when the wafer to be cut using Solution 2 (diluent of the cleaning solution composition prepared in Example 2) was cleaned (Sample 2), the dilution of the cleaning solution composition prepared in Comparative Solution 1 (Comparative Example 1). There was less black spots than the case of cleaning the wafer being cut using (Comparative Sample 1), and the wafer was cut using Solution 1 (diluent of the cleaning solution composition prepared in Example 1). It can be seen that the case (Sample 1) is less black spot than when cleaning the wafer cut using the solution 2 (Sample 2).

From this, it can be seen that as the content of the nonionic surfactant represented by Formula 1 increases, the aluminum fine particles present in the via hole are removed. That is, it was found that the cleaning power of the cleaning liquid composition according to the present invention was improved with increasing content of the nonionic surfactant.

Experimental Example 2-Evaluation of Prevention of Surface Damage of Substrate with or Without Polyethylene Glycol

The following experiment was carried out to know the degree of surface damage prevention of the substrate according to the inclusion of polyethylene glycol in the cleaning liquid composition according to the present invention.

1) Cracking and chipping of CMOS chips

Each of the cleaning liquid compositions prepared in Examples 1 and 3 and Comparative Example 1 was diluted 2,000 times with ultrapure water to prepare Solutions 3 and 4 and Comparative Solution 2. Subsequently, during the cutting of the CMOS chip, after cleaning the CMOS chip to be cut using the solution 3 and 4 and Comparative Solution 2, the surface of the CMOS chip is generated when cutting the CMOS chip using an optical microscope (X 300). The degree of cracking and chipping occurrence on the CMOS chip was observed. The results are shown in FIG. 2 and Table 2.

As can be seen in Figure 2, when cleaning the CMOS chip to be cut using Comparative Solution 2 (diluent of the cleaning solution composition prepared in Comparative Example 1) (Comparative Sample 2), many cracks and chipping occurs in the cutting site (See arrow in FIG. 2). On the other hand, when cleaning the CMOS chip to be cut using Solution 3 (diluent of the cleaning solution composition prepared in Example 1) containing polyethylene glycol (Sample 3), no cracking or chipping was found at the cutting site. In addition, even when the CMOS chip to be cut using Solution 4 (diluent of the cleaning solution composition prepared in Example 3) was cleaned (Sample 4), almost no surface damage visible to the naked eye was found (see arrow of FIG. 2). ).

2) Frequency of cracks in CMOS chips

Each of the cleaning liquid compositions prepared in Examples 1 and 3 and Comparative Example 1 was diluted 2,000 times with ultrapure water to prepare Solutions 3 and 4 and Comparative Solution 2. Then, when 500 CMOS chips were cut, each of the CMOS chips cut using the solutions 3 and 4 and Comparative Solution 2 was cleaned, and then the crack frequency occurring on the rear surface of each CMOS chip was measured. The results are shown in Table 2.

Rear cracks (pcs) Sample 3 1/500 Sample 4 3/500 Comparative Sample 2 13/500

As can be seen in Table 2, when cleaning the CMOS chip to be cut using Solution 3 (diluent of the cleaning solution composition prepared in Example 1) (Sample 3) only one out of 500 CMOS chips cut Cracks occurred only in the CMOS chip.

From this, when the cleaning liquid composition according to the present invention comprises polyethylene glycol, it can be seen that in addition to the cleaning power of the substrate to protect the surface of the substrate during cutting or cutting of the substrate to prevent the occurrence of cracking and chipping on the substrate.

 [Experimental Example 3]-Evaluation of metal corrosiveness according to the presence or absence of antioxidant and metal corrosion inhibitor

The following experiment was carried out to evaluate the corrosiveness of the metal depending on whether the antioxidant or metal corrosion inhibitor in the cleaning liquid composition according to the present invention.

Each of the cleaning solution compositions prepared in Examples 1 and 4 and Comparative Example 1 was placed in each test tube, and scraped pushpins were put therein. Then, the color change of the composition due to the corrosion of the tack over time was observed, of which the appearance of the in vitro composition after the initial (0 minutes) and 360 minutes is shown in FIG.

As a result, in the case of Test Tube 2 (containing the cleaning solution composition prepared in Example 4) or Comparative Test Tube 1 (containing the cleaning solution composition prepared in Comparative Example 1), the color of the solution in the test tube was transparent at the initial stage (0 minutes), but it was 360 After minutes passed, the color of the solution changed. On the other hand, in the case of Test Tube 1 containing the cleaning solution composition of Example 1 containing an antioxidant and a metal corrosion inhibitor, the color of the solution was clear even after the elapse of 360 minutes as in the initial stage (0 minutes).

From this, it was found that when the cleaning liquid composition according to the present invention contains an antioxidant and / or a metal corrosion inhibitor, corrosion of the metal in the substrate to be cleaned can be significantly prevented.

[Experimental Example 4]-Buffering effect according to the presence or absence of pH buffer

In order to evaluate the degree of prevention of pH change by the cleaning liquid composition according to the present invention, the following experiment was performed.

 To 50 ml of each of the cleaning liquid compositions prepared in Examples 1 and 5, 10 ml were further added until the amount of HCl solution having a pH of 2.00 was 100 ml, and the pH of each cleaning liquid composition was increased with increasing amount of HCl solution. The amount of change was measured. The measurement results thereof are shown in Table 3 below.

Addition amount of HCl solution (ml) PH change of Example 5 PH change amount of Example 1 0 0.00 0.00 10 0.44 0.05 20 0.85 0.11 30 1.36 0.16 40 2.92 0.20 50 6.07 0.25 60 7.22 0.29 70 7.51 0.34 80 7.66 0.39 90 7.77 0.44 100 7.85 0.48

As can be seen from Table 3, in the case of the cleaning solution composition prepared in Example 1 containing the first buffer sodium phosphate-sodium phosphate, the pH change gradually increased even though the amount of HCl solution was increased. In the case of the cleaning solution composition prepared in Example 5, in which the first sodium phosphate and the second sodium phosphate were not included, it was found that the pH rapidly increased as the amount of HCl solution was increased.

From this, when the cleaning liquid composition according to the present invention contains a pH buffer, the pH of the cleaning liquid composition due to the fine particles generated / added during cutting of the substrate keeps a certain range additionally in accordance with the pH change of the cleaning liquid composition. It has been found that corrosion and the like of metal generated can be prevented.

FIG. 1 is an optical microscope photograph of aluminum fine particles remaining in a via hole after cutting a wafer by using a solution obtained by diluting each of the cleaning solution compositions prepared in Examples 1 and 2 and Comparative Example 1. FIG.

Figure 2 is an optical micrograph showing the degree of cracking and chipping occurred in the CMOS chip after the cutting of the CMOS chip using a solution diluted with each of the cleaning liquid compositions prepared in Examples 1 and 3 and Comparative Example 1.

3 is a photograph showing the degree of metal corrosion by each cleaning liquid composition prepared in Examples 1 and 4 and Comparative Example 1 with time.

Claims (9)

(a) a nonionic surfactant represented by the following formula (1); (b) ultrapure water; And (c) two or more additives selected from the group consisting of polyethylene glycol, antioxidants, metal corrosion inhibitors and pH buffers Cleaning liquid compositions used to clean substrates, including: [Formula 1] R ₁ -[(EO) _x- (PO) _y ] _z -R ₂ (In the formula 1, EO is ethylene oxide (-CH ₂ -CH ₂ -O-), PO is propylene oxide (-CH (CH ₃ ) -CH ₂ -O-) or methylpropylene oxide (-CH ₂ -CH (CH ₃ ) -CH ₂ -O-), The EO and PO are combined by random addition or two or more block additions, The sequence order of the x EO and y PO is arbitrary, X, y and z are each independently an integer of 1 to 40, x / (x + y) is an integer of 0.1 to 0.8, R ₁ and R ₂ are each independently a hydrogen atom (-H), a hydroxyl group (-OH), a linear or branched alkyl group having 1 to 20 carbon atoms, or a linear or branched carbon group having 1 to 20 carbon atoms Alkenyl group). The cleaning liquid composition according to claim 1, wherein the pH of the cleaning liquid composition is in the range of 6 to 9. The composition of claim 1, wherein the nonionic surfactant has a weight average molecular weight in the range of 1,000 to 10,000. The composition of claim 1, wherein the polyethylene glycol has a weight average molecular weight in the range of 10,000 to 200,000. The method of claim 1, wherein the antioxidant is butylated hydroxy anisole (BHA), dibutyl hydroxy toluene (BHT) and t-butyl hydroquinone (t-butyl hydroquinone, TBHQ) Cleaning liquid composition, characterized in that at least one selected from the group consisting of. According to claim 1, wherein the metal corrosion inhibitor is 1-ethylamino-2-octadecyl imidazoline (1-ethylamino-2-octadecylimidazoline), di-sec- butylsulfide, diphenyl sulfoxide Diphenylsulfoxide, benzoic acid, m-methylbenzoic acid, p-methylbenzoic acid, benzenacetic acid, 2-ethylbenzoic acid , 3-ethylbenzoic acid, 2,3,5-trimethylbenzoic acid, cinnamic acid, hydrocinnamic acid, 4-methylcin Nam-san (4-methylcinnamic acid), salicylic acid, 2-isopropylbenzoic acid, 3-isopropylbenzoic acid, 4-isopropylbenzoic acid, Benzenebutanoic acid, 2,4-dimethylphenyl acetic acid, 2- (4-methylphenyl) propanoic acid, 2- (4-methylphenyl) propanoic acid, 4-propyl Benzoic acid (4-propylbenzoic acid), 4-ethylphenyl acetic acid, 3-phenylbutanoic acid, 3- (2-methylphenyl) propanoic acid [3- (2-methylphenyl) propionic acid], 3- (3-methylphenyl) propanoic acid [3- (3-methylphenyl) propionic acid], p-methylhydrocinnamic acid, 3-propylbenzoic acid, cresol (cresol), gallic acid, ethanolamine, methyl gallate, benzotriazoles, catechol, 1,2-di-hydroxy-benzene (1 , 2-di-hydroxy-benzene) and 2- (3,4-di-hydroxy-phenyl) -3,4-di-hydro-2H-1-benzopyran-3,5,7-triol [2 -(3,4-di-hydroxy-phenyl) -3,4-di-hydro-2H-1-benzopyran-3,5,7-triol] cleaning liquid composition characterized in that at least one member selected from the group consisting of. The method of claim 1, wherein the pH buffer is sodium phosphate (NaH ₂ PO ₄ ) -dibasic sodium phosphate (Na ₂ HPO ₄ ), hydrofluoric acid (HF) -ammonium fluoride ((NH ₄ ) F), Washing liquid composition characterized in that at least one selected from the acid-acid (Sodium Acetate), ammonium formate (HCO ₂ NH ₄ )-ammonia water (NH ₄ OH) -but acid-base. The method of claim 1, wherein the total weight of the cleaning liquid composition The content of the nonionic surfactant is 2 to 20% by weight, The total content of the two or more additives is 0.003 to 15% by weight, The amount of the ultrapure water is a cleaning liquid composition, characterized in that the remaining amount to adjust the total weight of the cleaning liquid composition to 100% by weight. At the time of cutting or after cutting of the substrate, it is cut or cut using a cleaning liquid composition according to any one of claims 1 to 8 or a solution prepared by diluting the cleaning liquid composition with ultrapure water 500 to 5,000 times. The method of cleaning a substrate comprising the step of cleaning the substrate.

Images