KR20110008412A - Hot melt-type adhesive composition, adhesive film, substrate for mounting semiconductor chip, semiconductor device and preparationg method thereof - Google Patents

Abstract

PURPOSE: A hot melt-type adhesive composition is provided to satisfy adhesive properties of a lead frame made of metal materials and an insulating layer of a semiconductor chip made of plastic materials and to prevent side effects generated by thermal stress in a high temperature process. CONSTITUTION: A hot melt-type adhesive composition includes 100 parts by weight of hard elastic thermoplastic rubber, and 1 part by weight - 100 parts by weight of a polyamide resin. A storage modulus at a room temperature of the thermoplastic rubber is 1,000 MPa - 1,000,000 MPa and a glass transition temperature is 50°C - 100°C. A softening point of the polyamide resin is 40°C - 100°C.

Description

Hot melt-type adhesive composition, adhesive film, substrate for semiconductor chip mounting, semiconductor device and manufacturing method therefor {Hot melt-type adhesive composition, adhesive film, substrate for mounting semiconductor chip, semiconductor device and preparationg method}

The present invention relates to a hot melt adhesive composition, an adhesive film, a semiconductor chip mounting substrate, a semiconductor device and a method of manufacturing the same.

In recent years, semiconductor chips have been increased in size due to demands for high-capacity functions. However, a package for accommodating them has been required to have a smaller size due to limitations in design of a printed circuit or a demand for miniaturization of an electronic device. In response to this trend, a new mounting method for increasing the density and mounting of semiconductor chips has been proposed.

A representative one of them is a lead on chip (LOC) structure for bonding leads onto a chip, which is a memory device. According to the LOC structure, it is possible to rationalize wiring and wire bonding in a chip, to speed up signals by shortening wiring, and to reduce package size.

In this new type of mounting structure, there is an adhesive interface between a heterogeneous material such as a semiconductor chip and a lead frame, and the adhesion reliability thereof has a great influence on the reliability of the semiconductor package. In addition, it is an important consideration that cracks due to solder reflow during mounting of the board must be prevented by the reliability that can withstand the process temperature and the workability of the bonding during the assembly of the package, as well as the adhesion reliability when absorbing moisture or heat. .

As a method of mounting a semiconductor chip in the semiconductor package of LOC structure as mentioned above, what apply | coated the adhesive agent to paste-type adhesive and a heat resistant base material has been used, The hot-melt adhesive agent which uses polyimide resin as a typical example is proposed. (Japanese Patent Laid-Open Publication No. Hei 05-105850, Japanese Patent Laid-Open Publication No. Hei 05-112760 and Japanese Patent Laid-Open Publication No. Hei 05-112761). However, in order to use the polyimide adhesive disclosed by the said technique in hot melt form, high temperature 300 degreeC or more is required. Therefore, there is a high possibility of causing thermal damage to the adherend such as a semiconductor chip or a copper lead frame. Accordingly, in order to impart low-temperature adhesive properties, the glass transition temperature must be lowered or a large amount of molecular structure in the state of an intermediate amic acid should be contained. However, in this case, it becomes vulnerable to high temperature and moisture, which may adversely affect the reliability. In addition, the polyimide adhesive resin has high inherent elastic properties, so that thermal stress between the chip and the lead frame caused by thermal history due to solder reflow during substrate mounting cannot be alleviated, and thus, cracks in the package, etc. There is a problem that frequently occurs.

The present invention has been made in consideration of the above-described problems, an efficient bonding process is possible at a low temperature, at the same time satisfies the adhesive properties to the insulating film of the lead frame of the metal material and the semiconductor chip of the plastic material, and to the thermal stress in the high temperature process It is an object of the present invention to provide a hot melt adhesive composition, an adhesive film, a semiconductor chip mounting substrate, a semiconductor device, and a method of manufacturing the same, which can prevent the disadvantage caused by the semiconductor package and improve the reliability of the semiconductor package.

The present invention is a means for solving the above problems, low elastic thermoplastic rubber; And it provides a hot melt adhesive composition comprising a polyamide resin.

The present invention is another means for solving the above problems, a base film; And an adhesive layer formed on one or both surfaces of the base film, the adhesive layer containing the adhesive composition according to the present invention.

The present invention as another means for solving the above problems, a lead frame; And it provides a semiconductor chip mounting substrate comprising an adhesive film according to the invention attached to the chip mounting surface of the lead frame.

The present invention as another means for solving the above problems, a lead frame; An adhesive film attached to a chip mounting surface of the lead frame; And it provides a semiconductor device comprising a semiconductor chip mounted on the lead frame via the adhesive film.

As another means for solving the above problems, the present invention provides a method of manufacturing a semiconductor device comprising the step of attaching a lead frame or a semiconductor chip at an adhesive temperature of 200 ℃ or less with the adhesive film according to the present invention.

The hot melt adhesive composition or adhesive film according to the present invention can perform an effective adhesion process even at a low temperature, specifically, a process temperature of 200 ° C. or less, and also between a lead frame made of metal and an insulating film of a semiconductor chip made of plastic. It satisfies the adhesive properties at the same time. In addition, the hot-melt adhesive composition or adhesive film of the present invention can effectively absorb and solve the thermal stress generated in the high temperature process, it is possible to improve the reliability and yield of the semiconductor package.

The present invention, low elastic thermoplastic rubber; And it relates to a hot melt adhesive composition comprising a polyamide resin.

Hereinafter, the hot melt adhesive composition of the present invention will be described in detail.

The hot-melt adhesive composition of the present invention comprises a thermoplastic rubber having low elastic properties as a main component, thereby providing an adhesive exhibiting excellent stress relaxation properties, low elastic properties, adhesive properties, high temperature shear strength and low temperature adhesive properties described below. can do. On the other hand, the term "thermoplastic rubber" (TPE) is used in the present invention as a concept including a polymer or a mixture of polymers made of a material having both thermoplastic and elastomeric properties.

In particular, in the present invention, as the thermoplastic rubber, it is preferable to use a low elastic thermoplastic rubber, specifically, a low elastic thermoplastic rubber having a storage modulus at room temperature of 1,000 MPa to 1,000,000 MPa. By using the low elastic thermoplastic rubber as described above in the present invention, the finally produced adhesive has a spring-like effect between the lead frame and the semiconductor chip, for example, when applied to the manufacture of a semiconductor device. It is possible to effectively absorb and alleviate the thermal stress generated in the lead frame. In the present invention, if the storage elastic modulus of the thermoplastic rubber is less than 1,000 MPa, there is a fear that the heat resistance strength or adhesive strength of the adhesive film is lowered, and if it exceeds 1,000,000 MPa, there is a fear that the low temperature adhesion characteristics and stress relaxation effect of the adhesive is lowered have.

In addition, the thermoplastic rubber used in the present invention preferably has a glass transition temperature of 50 ℃ to 100 ℃. As the glass transition temperature of the thermoplastic rubber satisfies the above-mentioned range, instantaneous adhesive properties can be ensured at low temperatures, specifically, 200 ° C. or lower, and the manufactured semiconductor device can exhibit excellent reliability. In the present invention, the glass transition temperature of the thermoplastic rubber is less than 50 ℃, there is a fear that the handleability or heat resistance of the product is lowered, if it exceeds 100 ℃, there is a fear that the low temperature adhesion characteristics of the adhesive.

The specific kind of the low elastic thermoplastic rubber that can be used in the present invention is not particularly limited as long as the above-described characteristics are satisfied. In the present invention, for example, as the above-mentioned thermoplastic rubber, styrene rubber (ex. Styrene butadiene rubber (SBR) or styrene ethylene butadiene rubber (SEBS; Styrene ethylene butadiene styrene rubber, etc.), polychloroprene rubber ( Polychloroprene rubber (CR), acrylonitrile-butadiene rubber (NBR), butyl rubber (IIR; Isoprene-isobutylene rubber), butadiene rubber (BR; Butadiene rubber), isoprene rubber (IR), ethylene-propylene rubber (EPR; Ethylene-propylene rubber), Ethylene-propylene-diene rubber (EPDM), polysulfide rubber, silicone rubber, fluoro rubber, One or more selected from the group consisting of urethane rubber and acrylic rubber can be used, and in the present invention, in view of adhesiveness and heat resistance, Butadiene rubber or styrene-ethylene-butadiene-styrene property from the thermoplastic rubber is preferable to use a styrene-based rubber such as styrene rubber, of styrene is more preferable to use the styrene-rubber-ethylene-butadiene.

In one aspect of the present invention, in consideration of the adhesion properties and the crosslinking point with the metal lead frame and the like, as the thermoplastic rubber, as an acid anhydride such as maleic anhydride or acetic anhydride Modified thermoplastic rubbers can be used, in which case it is particularly preferred to use maleic anhydride modified styrene-ethylene-butadiene-styrene rubbers.

The hot melt adhesive composition of the present invention comprises a polyamide resin together with the low elastic thermoplastic rubber described above. The polyamide resin partially crosslinks with the low elastic thermoplastic rubber, thereby solving the problem of low adhesion to the base film (ex. Polyimide) of the rubber, and excellent in the thermal history generated in the high temperature process. By having resistance, excellent reliability can be given to the manufactured semiconductor device. That is, the thermoplastic rubber or polyamide resin may be applied alone, for example, as a hot melt adhesive, but in this case, the bulk of the adhesive itself may be destroyed in a high temperature (ex. 170 ° C. or higher) process. Can be. However, when the two components are mixed and used as in the present invention, the above-mentioned problems are solved, and the adhesive may satisfy characteristics such as low temperature adhesion characteristics and heat resistance.

In the present invention, as the polyamide resin, preferably a polyamide resin having a softening point of 40 ° C to 100 ° C can be used. When the said softening point is less than 40 degreeC, there exists a possibility that the heat resistance of a product may fall, and when it exceeds 100 degreeC, there exists a possibility that low temperature adhesiveness property may fall.

In addition, the polyamide resin used in the present invention preferably has a weight average molecular weight of 10,000 to 1,000,000. If the weight average molecular weight is less than 10,000, it may be difficult to secure the mechanical strength of the adhesive in the high temperature process, and if it exceeds 1,000,000, the low temperature adhesion process efficiency may be lowered.

In addition, in this invention, in consideration of the adhesive force with a base film (ex. Polyimide film), it is preferable to use resin whose amine number is 3 mgHCl / g or more as said polyamide resin. The amine number in the above means the mg of HCl consumed to neutralize the amine contained in 1 g of the sample, which can be measured, for example, by the method specified in KS M 2004. In the present invention, when the amine value of the polyamide resin is less than 3 mgHCl / g, there is a fear that the adhesive property of the adhesive with the base film or the like is lowered. On the other hand, the upper limit of the amine number in the present invention is not particularly limited, for example, can be appropriately controlled in the range of 50 mgHCl / g or less.

In the present invention, such a polyamide resin is 1 part by weight to 100 parts by weight, preferably 10 parts by weight to 80 parts by weight, more preferably 30 parts by weight to 60 parts by weight, based on 100 parts by weight of the above-described low elastic thermoplastic rubber. It may be included in an amount by weight. If the content of the polyamide resin is less than 1 part by weight, there is a fear that the adhesive property of the adhesive to the substrate or the resistance to a high temperature process may deteriorate. If the content of the polyamide resin is more than 100 parts by weight, the stress relaxation property of the adhesive or the adhesion property to a metal lead frame, etc. Or there exists a possibility that the resistance to high temperature etc. may fall.

The hot melt adhesive composition of the present invention may also further comprise from 1 part by weight to 30 parts by weight of a filler with respect to 100 parts by weight of the total composition, in view of controlling the tack characteristics of the adhesive. The kind of filler which can be used at this time is not specifically limited, Various organic and inorganic fillers can be used, Preferably an inorganic filler can be used. In addition, the kind of inorganic filler that can be used is also not particularly limited, and examples thereof may include silica, aluminum hydroxide, calcium carbonate, magnesium hydroxide, aluminum oxide, talc or aluminum nitride.

In the present invention, as the filler, a filler having an average particle diameter of 0.001 µm to 10 µm, preferably 0.005 µm to 1 µm can be used. When the average particle diameter of the filler is less than 0.001 µm, the filler may aggregate in the adhesive, while when the average particle size exceeds 10 µm, the filler may protrude on the adhesive plane or the adhesiveness may decrease.

The filler may be included in an amount of 1 to 30 parts by weight, preferably 5 to 20 parts by weight, based on 100 parts by weight of the total composition. If the content is less than 1 part by weight, the heat resistance and handleability improvement effect due to filler addition may be lowered. If the content is more than 30 parts by weight, workability and substrate adhesion characteristics may be lowered.

The hot melt adhesive composition of the present invention may also comprise a coupling agent in addition to the above components. As the hot-melt adhesive composition includes a coupling agent, the dispersibility, adhesion, heat resistance, adhesion, and moist heat resistance properties of the above-described filler may be further improved. The type of coupling agent that can be used in the present invention is not particularly limited, and for example, a silane coupling agent, a titanium coupling agent, or one or more kinds of aluminum coupling agents may be used, but is not limited thereto. In the present invention, a silane coupling agent may be preferably used. Examples of the silane coupling agent that may be used include amino silane, epoxy silane, mercapto silane, ureido silane, (meth) acryloxy silane, and vinyl. Silane, sulfido, silane, etc. are mentioned, Among these, it is preferable to use a sulfido silane, but it is not limited to this.

In the present invention, the coupling agent may be included, for example, in an amount of 0.01 to 10 parts by weight, preferably 0.1 to 5 parts by weight, based on 100 parts by weight of the solid resin component. If the content is less than 0.01 part by weight, the effect of improving the adhesion between the resin and the filler interface or the substrate due to the addition of the coupling agent may be lowered. If the content exceeds 10 parts by weight, voids may occur or heat resistance may be lowered. There is a concern.

The hot melt adhesive composition of the present invention may also further comprise a polar low molecular weight additive. The additive may be included in the composition to further improve adhesion to the substrate and the like of the adhesive, and may also improve the heat resistance strength of the matrix through the reaction of the low-elastic thermoplastic rubber and the polyamide described above. The kind of the additives which can be used in the present invention is not particularly limited, and examples thereof include one kind or two or more kinds selected from the group consisting of an epoxy resin, a phenol resin, a functional group-containing low molecular weight acrylic resin, and a reactive petroleum resin. have. In the present invention, the content of the polar low molecular weight additive is not particularly limited and may be appropriately selected within a range that does not impair the object of the invention.

The present invention also provides a base film; And an adhesive layer formed on one side or both sides of the base film and containing the above-described hot melt adhesive composition according to the present invention.

1 and 2 are cross-sectional views showing various aspects of the adhesive film of the present invention. As shown in FIG. 1, the adhesive film 10 according to the present invention includes a base film 11 and an adhesive layer formed on one surface thereof. 12), and in some cases, as shown in FIG. 2, the base film 21 and the adhesive layers 22a and 22b formed on both surfaces thereof may be included.

In the adhesive film of the present invention, the adhesive layer may be preferably formed on both sides of the base film. In addition, the adhesive layer may contain the hot melt adhesive composition of the present invention in a dried, semi-cured or hardened state.

Although the kind of the said base film contained in the adhesive film of this invention is not specifically limited, Preferably a heat resistant thermoplastic film can be used. At this time, examples of the heat resistant thermoplastic film that can be used include a polyimide film, a polyether sulfone film, a polyamideimide film or a polyetherimide film. In this invention, it is especially preferable to use the film whose glass transition temperature is 300 degreeC or more as said heat resistant thermoplastic film, and it is preferable to specifically use the polyimide film which has the glass transition temperature of the above-mentioned range. In the present invention, the heat resistant film has better heat resistance as the glass transition temperature is higher, and the upper limit of the glass transition temperature is not particularly limited.

In addition, the thickness of the base film in the present invention is also not particularly limited, and may be appropriately selected in consideration of the applied process. In the present invention, for example, a film having a thickness of 5 μm to 200 μm, preferably 5 μm to 150 μm may be used as the base film.

In the present invention, it is also possible to perform appropriate surface treatment on the surface on which the adhesive layer of the base film is to be formed from the viewpoint of improving the adhesiveness with the adhesive layer. The surface treatment method that can be used at this time is not particularly limited, and for example, chemical treatment such as alkali treatment or silane coupling agent treatment; Physical treatment methods such as sand mat treatment, plasma treatment or corona treatment may be used.

In the present invention, the method for forming the adhesive layer on the base film as described above is not particularly limited. In the present invention, for example, the first step of producing a resin varnish by dissolving or dispersing the hot melt adhesive composition in a solvent; A second step of applying the resin varnish to the base film; And a third step of removing the solvent by heating the base film to which the resin varnish is applied, and in some cases, the resin varnish is once applied to the peelable base to form an adhesive layer. After forming, a method of transferring it to the base film may be used.

The first step is to prepare a resin varnish using the hot melt adhesive composition according to the present invention, the solvent is usually methyl ethyl ketone (MEK), acetone (Acetone), toluene (Toluene), dimethylformamide (DMF ), Methylcellosolve (MCS), tetrahydrofuran (THF), N-methylpyrrolidone (NMP), or a mixture of two or more kinds such as ethyl acetate can be used. Particularly, in the present invention, in order to manufacture a double-sided adhesive film having an adhesive layer formed on both sides of the base film, after coating the adhesive layer on one side of the film, re-coating may be performed on the back side, in the recoating process It is preferable to use a low boiling point solvent from the viewpoint of preventing the deterioration of the airtight adhesive layer, but a high boiling point solvent may be used to improve the uniformity of the coating film. In this invention, you may use combining two or more types of the above-mentioned solvents further.

In the case of using the filler in the manufacturing process of the resin varnish, from the viewpoint of improving the dispersibility of the filler, a ball mill, a bead mill, three rolls, or a single or two or more kinds of high-speed dispersers Combinations may be used, and as the material of the balls or beads, glass, alumina or zirconium may be used. Particularly, in view of dispersibility of particles, balls or beads made of zirconium are preferable. In this case, from the viewpoint of further improving dispersibility and shortening of the mixing time, the solvent and the filler are mixed in advance, the ball mill or the bead mill, etc. are mixed for a certain time, and finally, the high viscosity high molecular weight resin or the necessary additives are mixed. You can also use the method.

The second step of the production of the adhesive film is a step of applying the prepared resin varnish to the base film (or release film), in which case the coating method is not particularly limited, for example, knife coating method, roll coating method, A spray coat method, a gravure coat method, a curtain coat method, a comma coat method, a lip coat method, etc. can be used.

The third step of the production of the adhesive film is a step of removing the solvent by heating the base film (or release film) to which the resin varnish is applied. This process may be performed, for example, at a temperature of 70 ° C. to 250 ° C. for 1 minute to 10 minutes, but is not limited thereto.

In the present invention, the adhesive layer formed on one side or both sides of the base film in the same manner as described above, the storage modulus at 25 ℃ is preferably 100 MPa to 100,000 MPa. In the present invention, the storage modulus can be measured by a known device such as a dynamic visco-elasticity measuring instrument. In the present invention, when the adhesive has the aforementioned elastic characteristics (low elasticity characteristics), and when applied to a semiconductor device, the adhesive may serve as a spring between the lead frame and the semiconductor element (ex. Chip). Thus, for example, when a thermal stress occurs in the lead frame at a high temperature, the adhesive layer absorbs it, thereby effectively alleviating the stress, thereby preventing a defect such as cracking of the wire. In the present invention, if the storage elastic modulus is less than 100 MPa, heat resistance or adhesive strength may be lowered, and if it exceeds 100,000 MPa, low temperature adhesion characteristics and stress relaxation effects may be lowered.

In the present invention, the adhesive layer preferably has a high temperature shear strength of 200 N / cm or higher at 175 ° C. In the present invention, the shear strength may be measured, for example, by attaching a copper plate and a polyimide coated wafer with an adhesive according to the present invention, and then pushing at a speed of about 0.3 cm / sec. In the present invention, when the high temperature shear strength is less than 200 N / cm, the chip is attached in a semiconductor process, and the heat resistance to a high temperature process such as wire bonding or epoxy molding is performed, so that a defect such as breaking of a wire or chip push is performed. This may be caused. In addition, as long as the range of high temperature shear strength in this invention satisfy | fills more than the lower limit range mentioned above, the upper limit is not specifically limited.

It is preferable that the adhesive bond layer of this invention is 500 N / cm or more respectively in the interface peel force with a metal lead frame (copper plate) and a plastic base material, Preferably it is a polyimide base material. In the present invention, the interfacial peeling force can be measured, for example, by a method specified in ASTM D3330, or the like, specifically, after attaching the adhesive according to the present invention to a lead frame or a base film (ex. Polyimide film). The above can be measured while peeling at a peel angle of 180 ° and a peel rate of 300 mm / min. In the present invention, by controlling the interfacial peeling force of the adhesive to the metal lead frame and the base film in the above-mentioned range, respectively, the adhesive exhibits excellent low-temperature adhesive properties and elastic properties, and at the same time the adhesion between the lead frame of the metal material and the plastic substrate The characteristics can be satisfactorily satisfied at the same time. In the present invention, the upper limit of the interfacial peeling force with respect to the lead frame or the base film is not particularly limited.

The hot melt adhesive composition or adhesive film according to the present invention can perform an effective adhesion process even at a low temperature, specifically, a process temperature of 200 ° C. or less, and also between a lead frame made of metal and an insulating film of a semiconductor chip made of plastic. It satisfies the adhesive properties at the same time, and can effectively absorb and eliminate the thermal stress generated in the high temperature process. In particular, when the hot-melt adhesive composition or adhesive film of the present invention is applied to a package of a lead on chip (LOC) structure, it is possible to enable a low temperature bonding process to suppress side effects due to thermal stress and the like. It can effectively meet the thinning requirements of LOC package.

That is, in one aspect of the present invention, a lead frame; And there is provided a semiconductor chip mounting substrate comprising the adhesive film according to the present invention attached to the chip mounting surface of the lead frame.

In addition, according to another aspect of the invention, a lead frame; An adhesive film attached to a chip mounting surface of the lead frame; And

A semiconductor device including a semiconductor chip mounted on a lead frame through the adhesive film is provided.

3 shows a semiconductor device according to an aspect of the present invention, and as shown in FIG. 3, in the semiconductor device, the lead frame 1 and the semiconductor chip 2 are bonded to the adhesive film 20 according to the present invention. It may be attached via.

When using the hot-melt adhesive composition or adhesive film of the present invention, the above-described semiconductor chip mounting substrate or semiconductor device can be effectively produced in a low temperature process.

That is, the semiconductor chip mounting substrate or semiconductor device may be manufactured by a method including attaching the lead frame or the semiconductor chip to the above-described adhesive film according to the present invention at an adhesive temperature of 200 ° C. or less.

The method of attaching the adhesive film to the lead frame in the above may include, for example, cutting the adhesive film according to the present invention to a predetermined size and then attaching the adhesive film to the lead frame. In this case, the method of cutting the adhesive film is not particularly limited as long as it is a method capable of accurately cutting the film into a desired shape. For example, after cutting the adhesive film using a punching die or the like, the cut film is left as it is. A method of adhering to the leadframe can be used. In the above, the adhesive temperature of the adhesive film may be in the range of 200 ° C. or less, more specifically 150 ° C. to 200 ° C. In addition, the adhesive pressure in the above, in consideration of the adhesive properties and dimensional accuracy, can usually be 0.1 MPa to 20 MPa, preferably 0.3 MPa to 10 MPa, the adhesion time may be about 0.001 seconds to 1 second. However, the process conditions such as the adhesive pressure and time is only one example of the present invention, in the present invention, the process conditions can be freely changed according to the purpose.

In addition, the conditions of the process of attaching the adhesive film and the semiconductor chip in the above is not particularly limited as long as the bonding temperature is in the range of 200 ° C. or less, more specifically 150 ° C. to 200 ° C. In the present invention, for example, the adhesion pressure of the semiconductor chip can be controlled to 0.1 MPa to 20 MPa, preferably 0.3 MPa to 10 MPa, the adhesion time can be controlled to about 0.001 seconds to 1 second, but is not limited thereto. It doesn't happen.

Hereinafter, the present invention will be described in more detail with reference to examples according to the present invention and comparative examples not according to the present invention, but the scope of the present invention is not limited to the following examples.

Example 1.

63 parts by weight of styrene-ethylene-butadiene-styrene rubber (SEBS) (manufactured by Krayton Corp.); 27 parts by weight of polyamide resin (melting temperature: 84 ° C., weight average molecular weight: 25,000, manufactured by Fuji-Kasehi Co., Ltd.), 10 parts by weight of silica (average particle diameter: 7 nm, Degussa), and 0.1 weight of silane coupling agent. Part was dissolved in toluene as a solvent to prepare a resin varnish. Subsequently, the prepared resin varnish was applied to both sides of the polyimide base film and dried under appropriate conditions to prepare a double-sided adhesive film having a total thickness of 50 μm.

Example 2.

A double-sided adhesive film was prepared in the same manner as in Example 1 except that styrene-ethylene-butadiene-styrene rubber (manufactured by Krayton Co., Ltd.) modified with maleic anhydride was used instead of styrene-ethylene-butadiene-styrene rubber. .

Example 3.

Except for changing the content of silica to 5 parts by weight, a double-sided adhesive film was prepared in the same manner as in Example 2.

Example 4.

60 parts by weight of styrene-ethylene-butadiene-styrene rubber (SEBS) (manufactured by Krayton Corp.) modified with maleic anhydride; 20 parts by weight of polyamide resin (melting temperature: 84 ° C., weight average molecular weight: 25,000, manufactured by FujiKasehi Co., Ltd.), 10 parts by weight of bisphenol A type epoxy resin (manufactured by Kukdo Chemical Co., Ltd.), silica (average particle size: 7 nm) 10 parts by weight of Degussa (manufactured) and 0.1 parts by weight of a silane coupling agent were dissolved in toluene as a solvent to prepare a resin varnish. Subsequently, the prepared resin varnish was applied to both sides of the polyimide base film and dried under appropriate conditions to prepare a double-sided adhesive film having a total thickness of 50 μm.

Comparative Example 1.

An adhesive film was prepared in the same manner as in Example 1 except that no polyamide resin was used.

Comparative Example 2

An adhesive film was prepared in the same manner as in Example 1, except that the amount of the polyamide resin was changed to 90 parts by weight without using styrene-ethylene-butadiene-styrene rubber.

The physical properties of the adhesive films prepared in Examples and Comparative Examples were evaluated in the following manner, and the results are summarized in Table 1 and described.

1.Differential Scanning Calorimeter Glass Transition Temperature Measurement

With respect to the adhesive, the glass transition temperature was measured using DSC (manufactured by TA) while raising the temperature from 0 ° C to 300 ° C at a rate of 5 to 10 ° C / min.

2. Measurement of storage modulus

After forming the adhesive layer on the release film, it was cut into a size of 15 mm (W) x 45 mm (L) to prepare a specimen. Subsequently, using TA (Texture Analysis), the ends of the sample were fixed to each end using a jig so that the measuring part of the sample was 25 mm in the longitudinal direction, and then the storage elastic modulus was measured by stretching at 25 ° C. at a speed of 12.8 mm / min.

3. Evaluation of adhesion

Using a hot press, the adhesive films prepared in Examples and Comparative Examples were attached to a copper plate used for a lead frame by applying a pressure of 6 Kgf / cm ² for 1 second at a temperature of 200 ° C. Subsequently, the force was measured while peeling an adhesive film on the conditions of the peeling angle of 180 degrees and the peeling speed of 300 mm / min.

4. Flow Assessment

Using a hot press, the adhesive films prepared in Examples and Comparative Examples were attached to a copper plate used for a lead frame by applying a pressure of 6 Kgf / cm ² for 1 second at a temperature of 200 ° C. Next, the length of resin which flowed out using the optical microscope was measured, and this was prescribed | regulated as flow amount.

5. High temperature shear strength evaluation

Using a hot press, a copper plate used for a lead frame and a wafer having a size of 5 mm x 5 mm and coated with polyimide were attached using an adhesive film according to the present invention. At this time, the attachment was performed by applying a pressure of 6 Kgf / cm ² for 1 second at a temperature of 200 ℃. Next, the shear strength was measured while pushing the wafer at a rate of 0.3 cm / sec while supporting the copper plate while applying heat of 175 ° C.

6. Workability Evaluation

The lead frames (semiconductor chip mounting substrate) to which the adhesive films prepared in Examples and Comparative Examples were attached were overlapped with the adhesive layers facing each other, and left in an oven at 80 ° C. for 24 hours, and then the two lead frames were easily separated. It was confirmed whether or not. At this time, the case where the lead frame was easily separated was evaluated as ○, and the case where the lead frame was not separated.

TABLE 1

Example Comparative example One 2 3 4 One 2 DSC Tg (℃) 53/80/160 57/86/163 53/82/160 55/78/130/165 53/160 80 Storage modulus (MPa) 550 700 620 900 120 100 Adhesion force (gf) 520 600 670 500 700 320 Flowability (mm) 0 0 0 0 0 3 Shear strength (gf) 230 500 430 980 One One Workability ○ ○ ○ ○ × ×

As can be seen from the results of Table 1, in Examples 1 to 4 according to the present invention, the adhesion, the elastic properties and the high temperature shear strength is excellent, for example, in the low temperature bonding process in the semiconductor package process Even when applied, it was confirmed that an effective process is possible, and that the reliability of the manufactured device will be improved.

On the other hand, as in Comparative Examples 1 and 2, when the low elastic thermoplastic rubber and the polyamide resin are used alone, the high temperature shear strength is very low and the workability is poor, and thus, the wire bonding or the epoxy molding process is performed through the attachment process. It could be confirmed that it would be difficult to apply to a high temperature process. In addition, in the case of the adhesive films of Comparative Examples 1 and 2, the workability is remarkably inferior, for example, when the lead film is stored and transported until it is applied to the semiconductor chip mounting process in the state of pre-stamping the adhesive film on the lead frame, It could be confirmed that a defect such as bending of the frame would be easily caused.

1 and 2 show cross-sectional views of adhesive films according to various aspects of the invention.

3 is a cross-sectional view showing an example of a semiconductor package to which the adhesive film of the present invention is applied.

≪ Description of reference numerals &

10, 20: adhesive film 11, 21: base film

12, 22a, 22b: adhesive layer 1: leadframe

2: semiconductor chip

Claims (21)

Low elastic thermoplastic rubber; And a polyamide resin. The hot melt adhesive composition of claim 1, wherein the thermoplastic rubber has a storage modulus at room temperature of 1,000 MPa to 1,000,000 MPa. The hot melt adhesive composition of claim 1, wherein the thermoplastic rubber has a glass transition temperature of 50 ° C to 100 ° C. The method of claim 1, wherein the thermoplastic rubber is styrene rubber, polychloroprene rubber, nitrile rubber, butyl rubber, butadiene rubber, isoprene rubber, ethylene-propylene rubber, ethylene-propylene-diene rubber, polysulfide rubber, silicone rubber, fluorine Hot melt adhesive composition is at least one selected from the group consisting of furnace rubber, urethane rubber and acrylic rubber. The hot melt adhesive composition according to claim 1, wherein the thermoplastic rubber is modified with an acid anhydride. The hot melt adhesive composition of claim 1, wherein the polyamide resin has a softening point of 40 ° C to 100 ° C. The hot melt adhesive composition of claim 1, wherein the polyamide resin has a weight average molecular weight of 10,000 to 1,000,000. The hot melt adhesive composition of claim 1, wherein the polyamide resin has an amine number of at least 3 mgHCl / g. The hot melt adhesive composition according to claim 1, wherein the polyamide resin is contained in an amount of 1 part by weight to 100 parts by weight with respect to 100 parts by weight of the low elastic thermoplastic rubber. The hot melt adhesive composition of claim 1, further comprising 1 part by weight to 30 parts by weight of a filler based on 100 parts by weight of the total composition. The hot melt adhesive composition of claim 1, further comprising a coupling agent. The hot melt adhesive composition of claim 1, further comprising at least one selected from the group consisting of an epoxy resin, a phenol resin, a functional group-containing low molecular weight acrylic resin, and a reactive petroleum resin. Base film; And an adhesive layer formed on one or both surfaces of the base film, the adhesive layer containing the adhesive composition according to any one of claims 1 to 12. The hot melt adhesive film according to claim 13, wherein the base film is a polyimide film having a glass transition temperature of 300 ° C or higher. The hot melt adhesive film of claim 13, wherein the base film has a thickness of 5 μm to 200 μm. The hot melt adhesive film according to claim 13, wherein the adhesive layer has a storage modulus at 25 ° C of 100 MPa to 100,000 MPa. The hot melt adhesive film according to claim 13, wherein the adhesive layer has a high temperature shear strength of 200 N / cm or higher at 175 ° C. The hot melt adhesive film according to claim 13, wherein the adhesive layer has an interfacial peeling force of 500 N / cm or more with a metal lead frame and an interfacial peeling force of a plastic substrate of 500 N / cm or more. Leadframe; And an adhesive film according to claim 13 attached to the chip mounting surface of the lead frame. Leadframe; The adhesive film according to claim 13 attached to the chip mounting surface of the lead frame; And A semiconductor device comprising a semiconductor chip mounted on the lead frame via the adhesive film. A method of manufacturing a semiconductor device comprising attaching a lead frame or a semiconductor chip to an adhesive film according to claim 13 at an adhesion temperature of 200 ° C. or less.

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