KR20110002706A - Method for manufacturing magnetic tunnel junction device - Google Patents

Abstract

PURPOSE: A magnetic tunnel junction device manufacturing method is provided to prevent the characteristic deterioration of a magnetic tunnel junction by preventing the generation of a conductive product from a metallic layer. CONSTITUTION: A magnetic tunnel junction layer(27A) is formed on a substrate. An electrode pattern is formed on the magnetic tunnel junction layer. A sacrificial pattern(29) covers the entire surface of the electrode pattern. The magnetic tunnel junction layer is etched by using the sacrificial pattern as an etching barrier wall. The sacrificial pattern is removed.

Description

Magnetic tunnel junction device manufacturing method {METHOD FOR MANUFACTURING MAGNETIC TUNNEL JUNCTION DEVICE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a manufacturing technique of a semiconductor device, and more particularly, to a method of manufacturing a magnetic tunnel junction (MTJ) device.

Recently, due to the high integration of semiconductor memory devices, magneto-resistive memory devices (Magnetic Resistance Random Access Memory) have attracted attention as next-generation semiconductor memory devices that are advantageous for reducing cell area, and have high-speed operation and non-volatility. The magnetoresistive memory device is composed of a transistor for switching operation and a magnetic tunnel junction device (MTJ) for storing information. The magnetic tunnel junction device has a structure in which a tunnel insulation layer is interposed between two ferromagnetic layers. Have The magnetic tunnel junction device varies in magnetoresistance (MR) according to the magnetization direction of the two ferromagnetic films. The magnetic tunnel junction device is stored in the magnetic tunnel junction device by using a voltage change or a current change according to the magnetoresistance change. It can be determined whether the information is logical "1" or logical "0".

1A and 1B are cross-sectional views illustrating a method of manufacturing a magnetic tunnel junction apparatus according to the related art.

As shown in FIG. 1A, after forming the lower electrode pattern 12 on the substrate 11 having a predetermined structure, a pinning layer 13 and a pinned layer are formed on the lower electrode pattern 12. A magnetic tunnel junction layer 17 in which a pinned layer 14, a tunnel insulator 15 and a free layer 16 are sequentially stacked is formed. In this case, the pinning film 13 is formed of a metal compound having antiferromagnetic, and the pinned film 14 and the free layer 16 are formed of a metal compound having ferromagnetic.

Next, the upper electrode conductive layer 18 and the photoresist pattern 19 are sequentially formed on the magnetic tunnel junction layer 17, and then the photoresist pattern 19 is formed as an etch barrier. The conductive film 18 is etched to form the upper electrode pattern 18A.

As shown in FIG. 1B, after removing the photoresist pattern 19, the magnetic tunnel junction layer 17 is etched using the upper electrode pattern 18A as an etch barrier. At this time, in order for the magnetic tunnel junction device to operate normally, the free layer 15 and the pinned layer 13 must be electrically separated by the tunnel insulating layer 14. Hereinafter, the etched pinning film 13, the pinned film 14, the tunnel insulating film 15, the free film 16 and the magnetic tunnel junction layer 17 are denoted by '13A', '14A' and '15A, respectively. Changed to ',' 16A 'and' 17A '. As a result, a magnetic tunnel junction device having a structure in which the lower electrode pattern 12, the magnetic tunnel junction layer 17A, and the upper electrode pattern 18A are stacked may be formed.

Here, in the etching process of the magnetic tunnel junction layer 17A, the upper electrode pattern 18A serves as a hard mask, and the upper electrode pattern 18A is a metal film in consideration of the electrical characteristics of the magnetic tunnel junction device and its function as a hard mask. For example, it is formed of a tantalum film Ta.

However, in the prior art, part of the upper electrode pattern 18A serving as a hard mask is lost during the etching process of the magnetic tunnel junction layer 17A, and the lost upper electrode pattern 18A reacts with oxygen in the chamber to form a conductive metal oxide, for example. There is a problem in that conductive by-products (by product, P), such as tantalum oxide (Ta _x O _y , where x and y are natural numbers except 0), are generated. Conductive by-products (P) containing metals, such as tantalum oxide, do not volatilize well (or exhaust well outside the chamber) due to their high boiling point, and redeposit on the sidewalls of the magnetic tunnel junction layer 17A. This causes the problem of deteriorating the characteristics of the magnetic tunnel junction device. In particular, the electrical by-product P deteriorates the electrical characteristics of the magnetic tunnel junction device due to the conductive by-product P shorting the pinned layer 13A and the free layer 15A, as shown by reference numeral 'A'. The failure of the semiconductor device to be used, for example, the magnetoresistive memory device, causes a problem of lowering the reliability and manufacturing yield of the semiconductor device.

The present invention has been proposed to solve the above-mentioned problems of the prior art, and in the process of etching the magnetic tunnel junction layer, a magnetic tunnel capable of preventing the deterioration of characteristics of the magnetic tunnel junction device due to the conductive by-product derived from the upper electrode pattern. It is an object of the present invention to provide a method for manufacturing a bonding apparatus.

According to one aspect of the present invention, there is provided a magnetic tunnel junction apparatus, comprising: forming a magnetic tunnel junction layer on a substrate; Forming an electrode pattern on the magnetic tunnel junction layer; Forming a sacrificial pattern covering all surfaces of the electrode pattern; Etching the magnetic tunnel junction layer using the sacrificial pattern as an etch barrier; And removing the sacrificial pattern.

The sacrificial pattern may be formed at a temperature lower than at least 300 ℃. In addition, the sacrificial pattern may be formed of a single film made of a photoresist film or an amorphous carbon film, or may be formed of a laminated film in which an amorphous carbon film and a photoresist film are stacked.

The removing of the sacrificial pattern may be performed by using an O ₂ plasma treatment or by using a solution in which ammonia (NH ₄ OH) and hydrogen peroxide (H ₂ O ₂ ) are mixed. .

The electrode pattern may include a metallic layer, and the magnetic tunnel junction layer may be a laminated or free layer, a tunnel insulating layer, a pinned layer, and a pinning layer stacked on the substrate in the order of a pinning layer, a pinned layer, a tunnel insulating layer, and a free layer. It can be formed as a laminated film laminated in order.

According to another aspect of the present invention, there is provided a method for manufacturing a magnetic tunnel junction device, the method including: forming a magnetic tunnel junction layer on a substrate; Forming an electrode pattern on the magnetic tunnel junction layer; Forming a first sacrificial pattern covering all surfaces of the electrode pattern; Forming a second sacrificial pattern covering all surfaces of the first sacrificial pattern exposed at a lower temperature than the first sacrificial pattern forming process; Etching the magnetic tunnel junction layer using the second and first sacrificial patterns as an etch barrier; And sequentially removing the second and first sacrificial patterns.

The first sacrificial pattern may be formed at a temperature lower than at least 300 ° C. In addition, the first sacrificial pattern may be formed of a single film made of a photoresist film or an amorphous carbon film, or may be formed of a laminated film in which an amorphous carbon film and a photoresist film are stacked.

The second sacrificial pattern may be formed at a temperature lower than at least 100 ° C. In addition, the second sacrificial pattern may include an ultra low temperature oxide.

In the step of sequentially removing the second and the first sacrificial pattern, the first sacrificial pattern is removed using oxygen plasma treatment (O ₂ plasma treatment), or ammonia (NH ₄ OH) and hydrogen peroxide (H ₂ O ₂ ) may be removed using a mixed solution, and the second sacrificial pattern may be removed using a hydrofluoric acid solution or a BOE (Buffered Oxide Etchant) solution.

The electrode pattern may include a metallic layer, and the magnetic tunnel junction layer may be a laminated or free layer, a tunnel insulating layer, a pinned layer, and a pinning layer stacked on the substrate in the order of a pinning layer, a pinned layer, a tunnel insulating layer, and a free layer. It can be formed as a laminated film laminated in order.

The present invention based on the above-described problem solving means by etching the magnetic tunnel junction layer to the sacrificial pattern covering all the surface of the electrode pattern with an etching barrier (that is, a hard mask) to prevent the loss of the electrode pattern between processes, There is an effect that can prevent the production of conductive by-products originating from the metallic film constituting the pattern.

Thus, the present invention has the effect of preventing the deterioration of characteristics of the magnetic tunnel junction device due to the conductive by-products.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, in order to facilitate a person skilled in the art to easily carry out the technical idea of the present invention.

The present invention to be described later provides a method of manufacturing a magnetic tunnel junction device capable of preventing the deterioration of characteristics of the magnetic tunnel junction device due to the conductive by-products generated in the process of etching the magnetic tunnel junction layer using the upper electrode pattern as a hard mask. . To this end, the present invention forms a sacrificial pattern covering all the surfaces of the exposed upper electrode pattern, and then etching the magnetic tunnel junction layer using the sacrificial pattern as a hard mask to prevent the loss of the upper electrode pattern between processes. Shall be.

2A to 2C are process diagrams illustrating a method for manufacturing a magnetic tunnel junction apparatus according to a first embodiment of the present invention. Here, (A) of each figure is a top view, (B) is sectional drawing shown along the XX 'cutting line shown to (A).

As shown in FIG. 2A, a lower electrode pattern 22 is formed on a substrate 21 having a predetermined structure. The lower electrode pattern 22 may be connected to a switching element formed in the substrate 21, for example, a junction region of a transistor, and may be formed of a metallic film. As the metallic film, titanium film (Ti), tantalum film (Ta), platinum film (Pt), copper film (Cu), tungsten film (W), aluminum film (Al), titanium nitride film (TiN), and tantalum nitride film (TaN) ), Tungsten silicide film (WSi) and the like can be used.

Next, a pinning layer 23, a pinned layer 24, a tunnel insulator 25, and a free layer 26 are sequentially stacked on the lower electrode pattern 22. The magnetic tunnel junction layer 27 is formed.

The pinning film 23 serves to fix the magnetization direction of the pinned film 24 and may be formed using a material having antiferromagnetic. For example, as the material having antiferromagnetic properties, IrMn, PtMn, MnO, MnS, MnTe, MnF ₂ , FeF ₂ , FeCl ₂ , FeO, CoCl ₂ , CoO, NiCl _2, or NiO may be used. The pinning film 23 may be formed of a single film made of any one of the above-described antiferromagnetic materials, or may be formed of a laminated film in which they are stacked.

The pinned film 24 having the magnetization direction fixed by the pinning film 23 and the free layer 26 whose magnetization direction is changed by an external stimulus, for example, a magnetic field or spin transfer torque (STT). Can be formed using a material having ferromagnetic. For example, ferromagnetic materials include Fe, Co, Ni, Gd, Dy, NiFe, CoFe, MnAs, MnBi, MnSb, CrO ₂ , MnOFe ₂ O ₃ , FeOFe ₂ O ₃ , NiOFe ₂ O ₃ , CuOFe ₂ O ₃ , MgOFe ₂ O ₃ , EuO or Y ₃ Fe ₅ O ₁₂ may be used. In this case, the pinned film 24 and the free film 26 may be formed of a single film made of any one of the above-described ferromagnetic materials, or may be formed of a laminated film in which they are stacked. In addition, the pinned layer 24 and the free layer 26 may be formed as a laminated layer in which any one of the above-described ferromagnetic materials and the ruthenium layer Ru are stacked (eg, CdFe / Ru / CoFe). In addition, the pinned layer 24 and the free layer 26 may include a synthetic anti-ferromagnetic layer (SAF) in which a ferromagnetic layer, an anti-ferromagnetic coupling spacer layer, and a ferromagnetic layer are sequentially stacked. layer).

The tunnel insulating layer 25 serves as a tunneling barrier between the pinned layer 24 and the free layer 26, and any material having an insulating property may be used. For example, the tunnel insulating film 25 may be formed of a magnesium oxide film (MgO).

Meanwhile, the magnetic tunnel junction layer 27 may be formed as a laminated film stacked on the lower electrode pattern 22 in the order of the free layer 26, the tunnel insulating layer 25, the pinned layer 24, and the pinning layer 23. It may be. As such, when the free layer 26 is in contact with the lower electrode pattern 22, the free layer 26 plays a major role in changing the magnetoresistance (MR) of the magnetic tunnel junction device during the subsequent etching process of the magnetic tunnel junction layer 27. Since the film 26 is exposed relatively less than the free layer 26 in contact with the upper electrode pattern 28 during the etching process, the decrease in the magnetoresistance ratio due to the damage of the free layer 26 can be alleviated. Here, the magnetoresistance ratio MR is a value defined as a percentage of the resistance value in the low resistance state when the magnetic tunnel junction device is in the high resistance state and the low resistance state. In this case, the difference between the high resistance value and the low resistance value of the magnetic tunnel junction device is reduced, so that the information storage characteristic of the memory device using the magnetic tunnel junction device may be degraded.

Next, an upper electrode pattern 28 is formed on the magnetic tunnel junction layer 27. The upper electrode pattern 28 sequentially forms an upper electrode conductive film (not shown) and a photoresist pattern (not shown) on the magnetic tunnel junction layer 27, and then etches the photoresist pattern. As a result, it can be formed through a series of processes for etching the conductive film for the upper electrode.

Here, the upper electrode pattern 28 is preferably formed of a metallic film in consideration of the electrical characteristics of the magnetic tunnel junction device. The metallic film is a titanium film (Ti), a tantalum film (Ta), and a platinum film (Pt). , Copper film (Cu), tungsten film (W), aluminum film (Al), titanium nitride film (TiN), tantalum nitride film (TaN), tungsten silicide film (WSi), and the like.

As shown in FIG. 2B, the sacrificial pattern 29 is formed to cover all surfaces of the exposed upper electrode patterns 28, that is, side surfaces and upper surfaces. At this time, the sacrificial pattern 29 serves as an etch barrier (ie, a hard mask) during the subsequent etching process of the magnetic tunnel junction layer 27 and prevents the upper electrode pattern 28 from being lost. It serves to prevent the generation of conductive by-products derived from the material constituting the.

The sacrificial pattern 29 is preferably formed at a temperature lower than at least 300 ° C. in order to prevent deterioration of the characteristics of the formed structure, in particular, deterioration of the characteristics of the upper electrode pattern 28 made of a metallic film. For reference, in the case of a metallic film, for example, a tantalum film, the oxidation reaction proceeds rapidly when the process is performed at a temperature of 400 ° C. or higher, so that the upper electrode pattern 28 may be oxidized. In addition, the sacrificial pattern 29 may prevent the upper electrode pattern 28 from being oxidized or nitrided due to the diffusion of the oxygen component O or the nitrogen component N contained in the material constituting the sacrificial pattern 29. For this reason, it is preferable that the sacrificial pattern 29 is not formed of a material including a large amount of an oxygen component or a nitrogen component, for example, an oxide film or a nitride film.

Accordingly, the sacrificial pattern 29 may be formed at a low temperature of 300 ° C. or less, and may include a material (eg, a substantially no oxygen) or a nitrogen component and may act as an etching barrier during an etching process, for example, a photoresist film. (Photo Resist, PR) or an amorphous carbon film (Amorphous Carbon Layer (ACL)) may be formed of a single film or an amorphous carbon film and a photoresist film may be formed of a laminated film laminated. For reference, the photoresist film may be formed (or deposited) at a temperature of 110 ° C. or less, and the amorphous carbon film may be formed (or deposited) at a temperature of 275 ° C. or less.

For example, when the sacrificial pattern 29 is formed of a photoresist film, the photoresist film is applied to the entire surface of the structure including the upper electrode pattern 28, and then larger than the exposure mask defining the upper electrode pattern 28. The sacrificial pattern 29 may be formed through an exposure and development process using an exposure mask defining an area.

As shown in FIG. 2C, the magnetic tunnel junction layer 27, that is, the free layer 26, the tunnel insulation layer 25, the pinned layer 24, and the pinning layer 23 may be formed using the sacrificial pattern 29 as an etch barrier. Etch sequentially. Hereinafter, reference numerals of the etched pinning film 23, the pinned film 24, the tunnel insulating film 25, the free film 26 and the magnetic tunnel junction layer 27 will be referred to as' 23A ',' 24A 'and' 25A, respectively. Changed to ',' 26A 'and' 27A '.

Next, the sacrificial pattern 29 is removed. In this case, the sacrificial pattern 29 may be removed using a dry etch or a wet etch.

Specifically, a photoresist film, in the case of removing the sacrificial pattern (29) containing carbon as a primary component, such as an amorphous carbon film by a dry etching process has to be removed using an ashing (ashing), oxygen plasma treatment (O ₂ plasma treatment), called In the case of removing by wet etching, it may be removed using a solution in which ammonia (NH ₄ OH) and hydrogen peroxide (H ₂ O ₂ ) are mixed. Here, the sacrificial pattern 29 is more preferably removed by a wet etching method that can minimize damage to the formed structure.

As described above, according to the present invention, the magnetic tunnel junction layer 27A is etched using the sacrificial pattern 29 covering all the surfaces of the exposed upper electrode pattern 28 with an etch barrier (that is, a hard mask) to form the upper electrode pattern between processes. By preventing the loss of 28, it is possible to prevent the generation of conductive by-products originating from the metallic film constituting the upper electrode pattern 28. Through this, it is possible to prevent deterioration of characteristics of the magnetic tunnel junction device due to the conductive by-product.

Hereinafter, a second embodiment of the present invention will be described a method of manufacturing a magnetic tunnel junction device that can prevent the formation of conductive by-products from the upper electrode and at the same time improve the etching margin of the sacrificial pattern during the etching process of the magnetic tunnel junction layer. to provide.

3A to 3D are flowcharts illustrating a method of manufacturing a magnetic tunnel junction apparatus according to a second embodiment of the present invention. Here, (A) of each figure is a top view, (B) is sectional drawing shown along the XX 'cutting line shown to (A).

As shown in FIG. 3A, a lower electrode pattern 32 is formed on a substrate 31 having a predetermined structure. The lower electrode pattern 32 may be formed of a metallic film, and the metallic film may include a titanium film (Ti), a tantalum film (Ta), a platinum film (Pt), a copper film (Cu), a tungsten film (W), and aluminum. A film Al, a titanium nitride film TiN, a tantalum nitride film TaN, a tungsten silicide film WSi, or the like can be used.

Next, the pinning layer 33, the pinned layer 34, the tunnel insulating layer 35, and the free layer 36 are stacked on the lower electrode pattern 32 or the free layer on the lower electrode pattern 32. (36), the tunnel insulating film 35, the pinned film 34, and the pinning film 33 are formed in this order to form the magnetic tunnel junction layer 37.

Next, an upper electrode pattern 38 is formed on the magnetic tunnel junction layer 37. The upper electrode pattern 38 sequentially forms an upper electrode conductive film (not shown) and a photoresist pattern (not shown) on the magnetic tunnel junction layer 37, and then etches the photoresist pattern. As a result, it can be formed through a series of processes for etching the conductive film for the upper electrode.

Here, the upper electrode pattern 38 is preferably formed of a metallic film in consideration of the electrical characteristics of the magnetic tunnel junction device, and the metallic film is a titanium film (Ti), a tantalum film (Ta), and a platinum film (Pt). , Copper film (Cu), tungsten film (W), aluminum film (Al), titanium nitride film (TiN), tantalum nitride film (TaN), tungsten silicide film (WSi), and the like.

As shown in FIG. 3B, the first sacrificial pattern 39 is formed to cover all surfaces of the exposed upper electrode pattern 38, that is, side surfaces and upper surfaces. In this case, the first sacrificial pattern 39 serves as an etch barrier (that is, a hard mask) during the subsequent etching process of the magnetic tunnel junction layer 37 and prevents the upper electrode pattern 38 from being lost. 38) to prevent the formation of conductive by-products derived from the material constituting.

The first sacrificial pattern 39 is preferably formed at a temperature lower than at least 300 ° C. in order to prevent deterioration of the properties of the formed structure, in particular, deterioration of the properties of the upper electrode pattern 38 formed of the metallic film. In addition, the first sacrificial pattern 39 is oxidized or nitrided to the upper electrode pattern 38 due to diffusion of oxygen component (O) or nitrogen component (N) contained in the material constituting the first sacrificial pattern 39. It is preferable not to form a material containing a large amount of an oxygen component or a nitrogen component, for example, an oxide film or a nitride film, in order to prevent it from becoming.

Accordingly, the first sacrificial pattern 39 may be formed at a low temperature of 300 ° C. or lower, and may include an oxygen component or a nitrogen component (or almost no), and may act as an etching barrier during an etching process, for example, a photo. The resist film may be formed of a single film made of a resist film (PR) or an amorphous carbon film (ACL), or may be formed of a laminated film in which an amorphous carbon film and a photoresist film are stacked. For reference, the photoresist film may be formed (or deposited) at a temperature of 110 ° C. or less, and the amorphous carbon film may be formed (or deposited) at a temperature of 275 ° C. or less.

As illustrated in FIG. 3C, the second sacrificial pattern 40 is formed to cover all surfaces of the exposed first sacrificial pattern 39, that is, the side surface and the top surface. In this case, the second sacrificial pattern 40 serves as an etch barrier (that is, a hard mask) during the subsequent etching process of the magnetic tunnel junction layer 37 and at the same time serves to improve the etching margin of the first sacrificial pattern 39. do.

The second sacrificial pattern 40 is a process of forming the first sacrificial pattern 39 in order to prevent damage or deformation of the formed structure, in particular, damage or deformation of the first sacrificial pattern 39 made of a photoresist film or an amorphous carbon film. It is desirable to form at lower temperatures. Therefore, the second sacrificial pattern 40 is preferably formed at a temperature lower than at least 100 ℃.

Accordingly, the second sacrificial pattern 40 may be formed of a ultra low temperature oxide (ULTO) that may act as an etching barrier and may be formed at a temperature lower than 100 ° C. The low temperature oxide film may be formed at a temperature in the range of 70 ° C to 90 ° C. For reference, since the second sacrificial pattern 40 is formed on the first sacrificial pattern 39, the second sacrificial pattern 40 may be formed of a material containing a large amount of an oxygen component or a nitrogen component, for example, an oxide film or a nitride film. Characteristic deterioration of the upper electrode pattern 38 due to diffusion of oxygen and nitrogen components can be prevented.

As shown in FIG. 3D, the magnetic tunnel junction layer 37, that is, the free layer 36, the tunnel insulation layer 35, and the pinned layer 34 are formed by using the first and second sacrificial patterns 39 and 40 as etch barriers. And the pinning film 33 are sequentially etched. Hereinafter, the etched pinned films 33, pinned films 34, tunnel insulating films 35, free films 36, and magnetic tunnel junction layers 37 are referred to as' 33A 'and' 34A, respectively. Changed to ',' 35A ',' 36A 'and' 37A '.

Next, the second and first sacrificial patterns 40 and 39 are sequentially removed. In this case, the second sacrificial pattern 40 may be removed using a wet etching method, and the first sacrificial pattern 39 may be removed using a dry etching method or a wet etching method.

Specifically, the second sacrificial pattern 40 may be removed using a hydrofluoric acid solution (HF) or a buffered oxide etch (BOE) solution. When the first sacrificial pattern 39 is removed by a dry etching method, the first sacrificial pattern 39 may be removed using an oxygen plasma treatment. When the first sacrificial pattern 39 is removed by a wet etching method, ammonia (NH ₄ OH) and hydrogen peroxide (H ₂ O ₂ ) may be removed. ) Can be removed using a mixed solution. Here, the first sacrificial pattern 39 is more preferably removed by a wet etching method that can minimize damage to the structure formed.

As described above, according to the present invention, the magnetic tunnel junction layer 37A is etched using the first and second sacrificial patterns 39 and 40 covering all surfaces of the exposed upper electrode pattern 38 as an etch barrier (that is, a hard mask). In addition, by preventing the loss of the upper electrode pattern 38 during the process, it is possible to prevent the generation of the conductive by-product resulting from the metallic film constituting the upper electrode pattern 38.

Through this, it is possible to prevent deterioration of characteristics of the magnetic tunnel junction device due to the conductive by-product.

Although the technical spirit of the present invention has been described in detail according to the above preferred embodiment, it should be noted that the above embodiment is for the purpose of description and not of limitation. In addition, those skilled in the art will appreciate that various embodiments within the scope of the technical idea of the present invention are possible.

Figure 1a and Figure 1b is a process cross-sectional view showing a method for manufacturing a magnetic tunnel junction device according to the prior art.

2a to 2c is a process diagram showing a method for manufacturing a magnetic tunnel junction device according to a first embodiment of the present invention.

3A to 3D are process drawings showing a method for manufacturing a magnetic tunnel junction device according to a second embodiment of the present invention.

* Description of symbols on the main parts of the drawings *

21, 31: substrate 22, 32: lower electrode pattern

27, 27A, 37, 37A: magnetic tunnel junction layer 28, 38: upper electrode pattern

29: sacrificial pattern 39: the first sacrificial pattern

40: second sacrificial pattern

Claims (15)

Forming a magnetic tunnel junction layer on the substrate; Forming an electrode pattern on the magnetic tunnel junction layer; Forming a sacrificial pattern covering all surfaces of the electrode pattern; Etching the magnetic tunnel junction layer using the sacrificial pattern as an etch barrier; And Removing the sacrificial pattern Magnetic tunnel junction device manufacturing method comprising a. The method of claim 1, The sacrificial pattern is formed at a temperature lower than at least 300 ℃ magnetic tunnel junction device manufacturing method. The method according to claim 1 or 2, The sacrificial pattern may be formed of a single film made of a photoresist film or an amorphous carbon film, or formed of a laminated film in which an amorphous carbon film and a photoresist film are stacked. The method of claim 3, Removing the sacrificial pattern, It performed using an oxygen plasma treatment (O ₂ plasma treatment), or ammonia (NH ₄ OH) and hydrogen peroxide, a magnetic tunnel junction device manufacturing method carried out using a mixed solution (H ₂ O _2). The method of claim 1, The electrode pattern is a magnetic tunnel junction device manufacturing method comprising a metallic film. The method of claim 1, The magnetic tunnel junction layer is a magnetic tunnel formed on the substrate by a laminated film laminated in the order of a pinning film, a pinned film, a tunnel insulating film and a free film, or a laminated film laminated in the order of a free film, tunnel insulating film, a pinned film and a pinning film. Joining device manufacturing method. Forming a magnetic tunnel junction layer on the substrate; Forming an electrode pattern on the magnetic tunnel junction layer; Forming a first sacrificial pattern covering all surfaces of the electrode pattern; Forming a second sacrificial pattern covering all surfaces of the first sacrificial pattern exposed at a lower temperature than the first sacrificial pattern forming process; Etching the magnetic tunnel junction layer using the second and first sacrificial patterns as an etch barrier; And Sequentially removing the second and first sacrificial patterns Magnetic tunnel junction device manufacturing method comprising a. The method of claim 7, wherein The first sacrificial pattern is formed at a temperature lower than at least 300 ℃ magnetic tunnel junction device manufacturing method. 9. The method according to claim 7 or 8, And the first sacrificial pattern is formed of a single film made of a photoresist film or an amorphous carbon film, or a laminated film in which an amorphous carbon film and a photoresist film are laminated. 10. The method of claim 9, In the step of sequentially removing the second and first sacrificial pattern, The first sacrificial pattern is removed by using an oxygen plasma treatment (O ₂ plasma treatment), or a magnetic tunnel junction device to remove using a mixture of ammonia (NH ₄ OH) and hydrogen peroxide (H ₂ O ₂ ) Way. 9. The method according to claim 7 or 8, The second sacrificial pattern is formed at a temperature lower than at least 100 ℃ magnetic tunnel junction device manufacturing method. The method of claim 11, The second sacrificial pattern is a magnetic tunnel junction device manufacturing method comprising a low temperature oxide (Ultra Low Temperature Oxide). The method of claim 12, In the step of sequentially removing the second and first sacrificial pattern, The second sacrificial pattern is removed using a hydrofluoric acid solution or BOE (Buffered Oxide Etchant) solution. The method of claim 7, wherein The electrode pattern is a magnetic tunnel junction device manufacturing method comprising a metallic film. The method of claim 7, wherein The magnetic tunnel junction layer is a magnetic tunnel formed on the substrate by a laminated film laminated in the order of a pinning film, a pinned film, a tunnel insulating film and a free film, or a laminated film laminated in the order of a free film, tunnel insulating film, a pinned film and a pinning film. Joining device manufacturing method.

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