KR20100138300A - Solar cell and method of fabricating the same - Google Patents

Solar cell and method of fabricating the same Download PDF

Info

Publication number
KR20100138300A
KR20100138300A KR1020090056760A KR20090056760A KR20100138300A KR 20100138300 A KR20100138300 A KR 20100138300A KR 1020090056760 A KR1020090056760 A KR 1020090056760A KR 20090056760 A KR20090056760 A KR 20090056760A KR 20100138300 A KR20100138300 A KR 20100138300A
Authority
KR
South Korea
Prior art keywords
pattern
substrate
contact
electrode pattern
light absorbing
Prior art date
Application number
KR1020090056760A
Other languages
Korean (ko)
Other versions
KR101081143B1 (en
Inventor
조호건
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020090056760A priority Critical patent/KR101081143B1/en
Publication of KR20100138300A publication Critical patent/KR20100138300A/en
Application granted granted Critical
Publication of KR101081143B1 publication Critical patent/KR101081143B1/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

The solar cell according to the embodiment includes a plurality of back electrode patterns spaced apart from each other on a substrate; A light absorption layer pattern having a contact pattern for inter-electrode connection and a separation pattern for dividing into unit cells on the substrate on which the rear electrode pattern is disposed; A front electrode pattern disposed on the light absorbing layer and spaced apart from the separation pattern, wherein the front electrode pattern is inserted into the contact pattern to be electrically connected to the back electrode pattern and inserted into the contact pattern; A part of the front electrode pattern is in contact with the substrate.

Description

SOLAR CELL AND METHOD OF FABRICATING THE SAME

An embodiment relates to a solar cell and a manufacturing method thereof.

Recently, as the demand for energy increases, development of solar cells for converting solar energy into electrical energy is in progress.

In particular, CIGS-based solar cells, which are pn heterojunction devices having a substrate structure including a glass substrate, a metal back electrode layer, a p-type CIGS-based light absorbing layer, a high resistance buffer layer, an n-type window layer, and the like, are widely used.

In addition, as the photoelectric conversion efficiency of solar cells is improved, many solar power generation systems with photovoltaic modules have been installed outside of commercial buildings as well as in residential applications.

In order to improve the performance of such a solar cell, researches for improving the light receiving efficiency are in progress, and the appearance and display function of the solar cell are also important.

The embodiment provides a solar cell and a method of manufacturing the same that can control a transmission region of the solar cell.

The solar cell according to the embodiment includes a plurality of back electrode patterns spaced apart from each other on a substrate; A light absorption layer pattern having a contact pattern for inter-electrode connection and a separation pattern for dividing into unit cells on the substrate on which the rear electrode pattern is disposed; A front electrode pattern disposed on the light absorbing layer and spaced apart from the separation pattern, wherein the front electrode pattern is inserted into the contact pattern to be electrically connected to the back electrode pattern and inserted into the contact pattern; A part of the front electrode pattern is in contact with the substrate.

A method of manufacturing a solar cell according to an embodiment includes forming a plurality of back electrode patterns spaced apart from each other on a substrate; Forming a light absorbing layer including a contact pattern for connection between electrodes on the substrate on which the rear electrode pattern is disposed; And forming a front electrode pattern on the light absorbing layer, and then forming a separation pattern for dividing into unit cells, thereby forming a front electrode pattern spaced apart from the separation pattern. And a portion of the front electrode pattern inserted into the contact pattern to be electrically connected to the back electrode pattern and inserted into the contact pattern.

The solar cell and the method of manufacturing the same according to the embodiment are formed such that the width P2 of the contact pattern overlaps a part of the width P1 of the rear electrode pattern, thereby easily adjusting the transmission region of the solar cell.

That is, the width P1 of the rear electrode pattern is sufficiently wide, and then the width P2 of the contact pattern is adjusted to form as many transmission regions as desired.

In the description of the embodiments, where each substrate, layer, film, or electrode is described as being formed "on" or "under" of each substrate, layer, film, or electrode, etc. , "On" and "under" include both "directly" or "indirectly" formed through other components. In addition, the upper or lower reference of each component is described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

6 is a side cross-sectional view illustrating a solar cell according to an embodiment.

The solar cell according to the embodiment includes a back electrode pattern 200, a light absorbing layer 300, and a front electrode 500 formed on the substrate 100.

The back electrode patterns 200 are spaced apart from each other on the substrate 100.

The light absorbing layer 300 includes a contact pattern 310 and a separation pattern 320, and the contact pattern 310 is formed to connect the electrodes of the rear electrode pattern 200 and the front electrode 500. The separation pattern 320 is formed to divide into unit cells.

The front electrode 500 is inserted into the contact pattern 310 to be electrically connected to the back electrode pattern 200, and a part of the front electrode 500 inserted into the contact pattern 310 is formed on the substrate ( 100).

In addition, a portion of the light absorbing layer 300 and a portion of the front electrode 500 are disposed between the rear electrode pattern 200 to be in contact with the substrate 100.

A more detailed description of the solar cell of the present embodiment will be described together with the manufacturing method of the solar cell.

1 to 6 are cross-sectional views illustrating a method of manufacturing a solar cell according to an embodiment.

First, as shown in FIG. 1, the back electrode 201 is formed on the substrate 100.

The substrate 100 may be glass, and a ceramic substrate such as alumina, stainless steel, a titanium substrate, or a polymer substrate may also be used.

Soda lime glass may be used as the glass substrate, and polyimide may be used as the polymer substrate.

In addition, the substrate 100 may be rigid or flexible.

The back electrode 201 may be formed of a conductor such as metal.

For example, the back electrode 201 may be formed by a sputtering process using a molybdenum (Mo) target.

This is because of high electrical conductivity of molybdenum (Mo), ohmic bonding with the light absorbing layer, and high temperature stability under Se atmosphere.

In addition, although not shown in the drawing, the back electrode 201 may be formed of at least one layer.

When the back electrode 201 is formed of a plurality of layers, the layers constituting the back electrode 201 may be formed of different materials.

Subsequently, as shown in FIG. 2, a patterning process is performed on the back electrode 201 to form a back electrode pattern 200.

The back electrode pattern 200 may be formed to expose the substrate 100.

In addition, the back electrode pattern 200 may be arranged in a stripe form or a matrix form and may correspond to each cell.

However, the back electrode pattern 200 is not limited to the above form and may be formed in various forms.

At this time, by adjusting the width (P1) between the back electrode pattern 200, it is possible to adjust the transmission region of the solar cell.

As shown in FIG. 3, the light absorbing layer 300 and the buffer layer 400 are formed on the back electrode pattern 200.

The light absorbing layer 300 includes an Ib-IIIb-VIb-based compound.

In more detail, the light absorbing layer 300 includes a copper-indium-gallium-selenide-based (Cu (In, Ga) Se 2 , CIGS-based) compound.

Alternatively, the light absorbing layer 300 may include a copper-indium selenide-based (CuInSe 2 , CIS-based) compound or a copper-gallium-selenide-based (CuGaSe 2 , CIS-based) compound.

For example, to form the light absorbing layer 300, a CIG-based metal precursor film is formed on the back electrode pattern 200 using a copper target, an indium target, and a gallium target.

Thereafter, the metal precursor film is reacted with selenium (Se) by a selenization process to form a CIGS-based light absorbing layer 300.

In addition, during the process of forming the metal precursor film and the selenization process, an alkali component included in the substrate 100 may pass through the back electrode pattern 200, and the metal precursor film and the light absorbing layer ( 300).

An alkali component may improve grain size and improve crystallinity of the light absorbing layer 300.

In addition, the light absorbing layer 300 may form copper, indium, gallium, selenide (Cu, In, Ga, Se) by co-evaporation.

The light absorbing layer 300 receives external light and converts the light into electrical energy. The light absorbing layer 300 generates photo electromotive force by the photoelectric effect.

The buffer layer 400 is formed of at least one layer, and any one or a stack of cadmium sulfide (CdS), ITO, ZnO, and i-ZnO on the substrate 100 on which the light absorbing layer 300 is formed. It can be formed as.

In this case, the buffer layer 400 is an n-type semiconductor layer, the light absorbing layer 300 is a p-type semiconductor layer. Thus, the light absorbing layer 300 and the buffer layer 400 form a pn junction.

The buffer layer 400 is disposed between the light absorbing layer 300 and the front electrode to be formed later.

That is, since the difference between the lattice constant and the energy band gap is large between the light absorbing layer 300 and the front electrode, a good junction may be formed by inserting the buffer layer 400 having a band gap between the two materials.

In the present exemplary embodiment, one buffer layer is formed on the light absorbing layer 300, but the present invention is not limited thereto, and the buffer layer may be formed of a plurality of layers.

Next, as shown in FIG. 4, a contact pattern 310 penetrating the light absorbing layer 300 and the buffer layer 400 is formed.

The contact pattern 310 may be formed by irradiating a laser or by a mechanical method, and a portion of the back electrode pattern 200 and the substrate 100 are exposed.

That is, the width P1 of the back electrode pattern 200 and the width P2 of the contact pattern 310 may overlap each other to expose the substrate 100.

In this case, the width P1 of the back electrode pattern 200 and the width P2 of the contact pattern 310 may overlap each other, thereby reducing a dead area other than the cell area.

One back electrode pattern 200 may be exposed on the contact pattern 310.

In addition, the width P2 of the contact pattern 310 may be adjusted to control the transmission region of the solar cell.

In this case, the width P2 of the contact pattern 310 is formed to overlap a part of the width P1 of the back electrode pattern 200, thereby easily adjusting the transmission region of the solar cell.

That is, the width P1 of the back electrode pattern 200 may be sufficiently wide, and then the width P2 of the contact pattern 310 may be adjusted to form as many transmission regions as desired.

As shown in FIG. 5, the transparent conductive material is stacked on the buffer layer 400 to form the front electrode 500 and the connection wiring 700.

When the transparent conductive material is stacked on the buffer layer 400, the transparent conductive material may also be inserted into the contact pattern 310 to form the connection wiring 700.

The back electrode pattern 200 and the front electrode 500 are electrically connected to each other by the connection wiring 700.

In this case, the connection wiring 700 may be formed to contact the substrate 100, and a part of the connection wiring 700 and a part of the light absorbing layer 300 are interposed between the back electrode pattern 200. Is formed.

That is, a portion of the connection wiring 700 and a portion of the light absorbing layer 300 are formed between the back electrode pattern 200 on the substrate 100 to contact the substrate 100.

The front electrode 500 is formed of zinc oxide doped with aluminum or alumina by a sputtering process on the buffer layer 400.

The front electrode 500 is a window layer forming a pn junction with the light absorbing layer 300. Since the front electrode 500 functions as a transparent electrode on the front of the solar cell, zinc oxide (ZnO) having high light transmittance and good electrical conductivity is provided. Is formed.

In this case, an electrode having a low resistance value may be formed by doping the zinc oxide with aluminum or alumina.

The zinc oxide thin film which is the front electrode 500 may be formed by a method of depositing using a ZnO target by RF sputtering, reactive sputtering using a Zn target, and organometallic chemical vapor deposition.

In addition, a double structure in which an indium thin oxide (ITO) thin film having excellent electro-optic properties is laminated on a zinc oxide thin film may be formed.

Subsequently, as illustrated in FIG. 6, a separation pattern 320 penetrating the light absorbing layer 300, the buffer layer 400, and the front electrode 500 is formed.

The separation pattern 320 may be formed by irradiating a laser.

The buffer layer 400 and the front electrode 500 may be separated by the separation pattern 320, and the cells C1 and C2 may be separated from each other by the separation pattern 320.

In addition, the buffer layer 400 and the light absorbing layer 300 may be arranged in the form of a stripe or a matrix by the separation pattern 320.

The separation pattern 300 is not limited to the above form and may be formed in various forms.

Cells C1 and C2 including the back electrode pattern 200, the light absorbing layer 300, the buffer layer 400, and the front electrode 500 are formed by the separation pattern 320.

In this case, each of the cells C1 and C2 may be connected to each other by the connection wiring 700. That is, the connection wiring 700 electrically connects the back electrode pattern 200 of the second cell C2 and the front electrode 500 of the first cell C1 adjacent to the second cell C2. do.

The solar cell and the method of manufacturing the same according to the embodiments described above are formed such that the width P2 of the contact pattern overlaps a part of the width P1 of the rear electrode pattern, thereby easily adjusting the transmission region of the solar cell.

That is, the width P1 of the rear electrode pattern is sufficiently wide, and then the width P2 of the contact pattern is adjusted to form as many transmission regions as desired.

Although described above with reference to the embodiment is only an example and is not intended to limit the invention, those of ordinary skill in the art to which the present invention does not exemplify the above within the scope not departing from the essential characteristics of this embodiment It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

1 to 6 are cross-sectional views illustrating a method of manufacturing a solar cell according to an embodiment.

Claims (6)

A plurality of back electrode patterns spaced apart from each other on the substrate; A light absorption layer pattern having a contact pattern for inter-electrode connection and a separation pattern for dividing into unit cells on the substrate on which the rear electrode pattern is disposed; Is disposed on the light absorbing layer, and includes a front electrode pattern spaced apart by the separation pattern, The front electrode pattern is inserted into the contact pattern and electrically connected to the back electrode pattern. And a part of the front electrode pattern inserted into the contact pattern contacts the substrate. The method of claim 1, A portion of the light absorbing layer pattern and a portion of the front electrode pattern are disposed between the rear electrode pattern and contact the substrate. 3. The method of claim 2, The front electrode pattern extends to contact the adjacent front electrode pattern. Forming a plurality of back electrode patterns spaced apart from each other on the substrate; Forming a light absorbing layer including a contact pattern for connection between electrodes on the substrate on which the rear electrode pattern is disposed; And After forming the front electrode on the light absorbing layer, forming a separation pattern for dividing into a unit cell, to form a front electrode pattern spaced apart by the separation pattern, The front electrode pattern is inserted into the contact pattern and electrically connected to the back electrode pattern, And a part of the front electrode pattern inserted into the contact pattern is in contact with the substrate. The method of claim 4, wherein A portion of the light absorbing layer pattern and a portion of the front electrode pattern are disposed between the rear electrode patterns to contact the substrate. The method of claim 4, wherein When forming a light absorbing layer including the contact pattern, A method of manufacturing a solar cell comprising exposing a portion of the substrate and the back electrode pattern through the contact pattern.
KR1020090056760A 2009-06-25 2009-06-25 Solar cell and method of fabricating the same KR101081143B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020090056760A KR101081143B1 (en) 2009-06-25 2009-06-25 Solar cell and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090056760A KR101081143B1 (en) 2009-06-25 2009-06-25 Solar cell and method of fabricating the same

Publications (2)

Publication Number Publication Date
KR20100138300A true KR20100138300A (en) 2010-12-31
KR101081143B1 KR101081143B1 (en) 2011-11-07

Family

ID=43511788

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090056760A KR101081143B1 (en) 2009-06-25 2009-06-25 Solar cell and method of fabricating the same

Country Status (1)

Country Link
KR (1) KR101081143B1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101220015B1 (en) * 2011-04-04 2013-01-21 엘지이노텍 주식회사 Solar cell apparatus and method of fabricating the same
KR20180094808A (en) * 2017-02-16 2018-08-24 한국항공대학교산학협력단 Method of fabrication see-through cigs thin film solar cell and see-through cigs thin film solar cell
WO2023116224A1 (en) * 2021-12-24 2023-06-29 宁德时代新能源科技股份有限公司 Solar cell and manufacturing method therefor, photovoltaic module, and electrical device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101783784B1 (en) * 2011-11-29 2017-10-11 한국전자통신연구원 solar cell module and manufacturing method of the same
KR102107798B1 (en) * 2018-06-14 2020-05-07 고려대학교 산학협력단 Thin-film solar module and method for manufacturing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006013403A (en) 2004-06-29 2006-01-12 Sanyo Electric Co Ltd Solar cell, solar cell module, its manufacturing method, and its reparing method
JP4909032B2 (en) 2006-11-30 2012-04-04 三洋電機株式会社 Solar cell module
JP2009130020A (en) * 2007-11-21 2009-06-11 Mitsubishi Heavy Ind Ltd Solar cell panel and method of manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101220015B1 (en) * 2011-04-04 2013-01-21 엘지이노텍 주식회사 Solar cell apparatus and method of fabricating the same
KR20180094808A (en) * 2017-02-16 2018-08-24 한국항공대학교산학협력단 Method of fabrication see-through cigs thin film solar cell and see-through cigs thin film solar cell
WO2023116224A1 (en) * 2021-12-24 2023-06-29 宁德时代新能源科技股份有限公司 Solar cell and manufacturing method therefor, photovoltaic module, and electrical device

Also Published As

Publication number Publication date
KR101081143B1 (en) 2011-11-07

Similar Documents

Publication Publication Date Title
KR101173344B1 (en) Solar cell and mehtod of fabricating the same
KR101154727B1 (en) Solar cell and method of fabricating the same
KR101125322B1 (en) Solar cell and method of fabircating the same
KR101144570B1 (en) Solar cell and method of fabircating the same
KR101034150B1 (en) Solar cell and method of fabircating the same
KR101081075B1 (en) Solar cell and method of fabricating the same
KR101091253B1 (en) Solar cell and method of fabircating the same
KR101081143B1 (en) Solar cell and method of fabricating the same
KR101428146B1 (en) Solar cell module and method of fabricating the same
KR101081292B1 (en) Solar cell and method of fabricating the same
KR101382898B1 (en) See through type solar cell and fabricating method
KR101091505B1 (en) Solar cell and method of fabircating the same
KR101592582B1 (en) Solar cell and method of fabircating the same
KR20110001795A (en) Solar cell and method of fabricating the same
KR101028310B1 (en) Solar cell and method of fabricating the same
KR101063721B1 (en) Solar cell and manufacturing method thereof
KR101081095B1 (en) Solar cell and method of fabricating the same
KR101231284B1 (en) Solar cell and method of fabircating the same
KR101020941B1 (en) Solar cell and method of fabircating the same
KR101209982B1 (en) Solar cell and method of fabircating the same
KR101081175B1 (en) Solar cell and method of fabricating the same
KR101072067B1 (en) Tip, solar cell and method of fabricating the solar cell using the tip
KR101543034B1 (en) Tip and method of fabricating the solar cell using the tip
KR101072116B1 (en) Solar cell and method of fabircating the same
KR20110036353A (en) Solar cell and method of fabircating the same

Legal Events

Date Code Title Description
A201 Request for examination
N231 Notification of change of applicant
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20141007

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20151005

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20161006

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20171011

Year of fee payment: 7

LAPS Lapse due to unpaid annual fee