KR20100137651A - Thin film type solar cell, and method for manufacturing the same - Google Patents

Abstract

PURPOSE: A thin film type solar cell and a method for manufacturing the same are provided to reduce a dead zone by eliminating the pre-set region of a transparent conductive layer using a rear electrode as a mask. CONSTITUTION: A front electrode(200) is formed on a substrate(100). A first separating part(250) is formed by eliminating a pre-set region of the front electrode. A semiconductor layer(300) is formed on the first separating part and the front electrode. A transparent conductive layer(400) is formed on the semiconductor layer. A contact part is formed by eliminating a pre-set region of the semiconductor layer and the transparent conductive layer. A rear electrode(500) in contact with the front electrode through the contact part is formed.

Description

Thin film type solar cell and its manufacturing method {Thin film type Solar Cell, and Method for manufacturing the same}

The present invention relates to a thin-film solar cell and a method for manufacturing the same, and more particularly, to a thin-film solar cell and a method for manufacturing the same to improve the efficiency of the solar cell and to reduce the production cost of the solar cell.

Solar cells are devices that convert light energy into electrical energy using the properties of semiconductors.

The structure and principle of the solar cell will be described briefly. The solar cell has a PN junction structure in which a P (positive) type semiconductor and an N (Negative) type semiconductor are bonded to each other. Holes and electrons are generated in the semiconductor by the energy of the incident solar light. At this time, the holes (+) are moved toward the P-type semiconductor by the electric field generated in the PN junction. Negative (-) is moved toward the N-type semiconductor to generate a potential to produce power.

Such a solar cell may be classified into a thin film solar cell and a substrate solar cell.

The thin film solar cell is a solar cell manufactured by forming a semiconductor in the form of a thin film on a substrate such as glass, the substrate solar cell is a solar cell manufactured by using a semiconductor material such as silicon itself as a substrate.

Although the substrate type solar cell is somewhat superior in efficiency to the thin film type solar cell, there is a limitation in minimizing the thickness in the process and the manufacturing cost is increased because an expensive semiconductor substrate is used.

Although the thin film type solar cell has a somewhat lower efficiency than the substrate type solar cell, the thin film solar cell is suitable for mass production because the thin film solar cell can be manufactured in a thin thickness and a low cost material can be used to reduce the manufacturing cost.

The thin film solar cell is manufactured by forming a front electrode on a substrate such as glass, forming a semiconductor layer on the front electrode, and forming a back electrode on the semiconductor layer, hereinafter, a conventional thin film solar cell with reference to the drawings. This will be described in more detail.

1A to 1F are diagrams for explaining a manufacturing process of a conventional thin film solar cell step by step.

First, as shown in FIG. 1A, the front electrode material 20a is formed on the substrate 10.

Next, as can be seen in Figure 1b, by removing the predetermined region of the front electrode material (20a) through a laser scribing (Laser Scribing) process, the front electrode 20 spaced apart with the first separation unit 25 therebetween. To form.

Next, as shown in FIG. 1C, the semiconductor material 30a and the transparent conductive material 40a are sequentially formed on the entire surface of the substrate 10.

Next, as shown in FIG. 1D, the semiconductor layer 30 is spaced apart from the contact portion 35 by removing a predetermined region of the semiconductor material 30a and the transparent conductive material 40a through a laser scribing process. And a transparent conductive layer 40.

Next, as shown in FIG. 1E, a back electrode material 50a is formed on the entire surface of the substrate 10.

Next, as shown in FIG. 1F, the second separator 45 is removed by removing predetermined regions of the semiconductor layer 30, the transparent conductive layer 40, and the back electrode material 50a by using a laser scribing process. Form. Accordingly, the rear electrode 50 spaced apart from each other with the second separator 45 therebetween is formed.

However, the conventional method of manufacturing a thin film solar cell has the following problems.

First, since the second separation part 45 is formed to be spaced apart from the contact part 35 by 250 μm or more in order to secure the process margin of the laser scribing process when the second separation part 45 is formed, the first separation part ( The gap between 25 and the second separator 45 is widened so that a dead zone that cannot operate as a solar cell is increased, thereby degrading the efficiency of the solar cell.

Second, since an expensive laser process is used to form the second separator 45, there is a problem in that facility cost for manufacturing a solar cell increases.

The present invention is to solve the above problems, to provide a thin-film solar cell and a method of manufacturing the same to improve the efficiency of the solar cell and to reduce the production equipment cost of the solar cell.

Method of manufacturing a thin-film solar cell according to the present invention for achieving the above technical problem is a step of forming a front electrode formed on a substrate; Removing a predetermined region of the front electrode to form a first separator; Forming a semiconductor layer on the front electrode and the first separator; Forming a transparent conductive layer on the semiconductor layer; Forming a contact portion by removing predetermined regions of the semiconductor layer and the transparent conductive layer; Forming a back electrode having a predetermined pattern electrically connected to the front electrode through the contact portion and having a separation region on the transparent conductive layer; And removing the transparent conductive layer in the separation region using the back electrode as a mask to form a second separation portion.

Method of manufacturing a thin-film solar cell according to the present invention for achieving the above technical problem is a step of forming a front electrode formed on a substrate; Removing a predetermined region of the front electrode to form a first separator; Forming a semiconductor layer on the front electrode and the first separator; Forming a transparent conductive layer on the semiconductor layer; Removing a predetermined region of the semiconductor layer and the transparent conductive layer to form a contact portion; Forming a back electrode having a predetermined pattern electrically connected to the front electrode through the contact portion and having a separation region on the transparent conductive layer; And removing the transparent conductive layer and the semiconductor layer in the separation region using the back electrode as a mask to form a second separation portion.

The back electrode of the predetermined pattern is formed on the remaining transparent conductive layer except for the separation region, and is spaced apart by a predetermined interval by the separation region.

The isolation region is formed on the transparent conductive layer on the front electrode so as to be adjacent to the contact portion.

The back electrode may include screen printing, inkjet printing, gravure printing, gravure offset printing, reverse offset printing, flexo printing, Or it is characterized by forming in a predetermined pattern by microcontact printing (microcontact printing).

Forming the second separator is characterized in that it is made through a dry etching process.

The process of forming the second separator is characterized in that the wet etching process using an etching solution.

The etchant is characterized in that it comprises at least one of the etching material of NaOH, KOH, HCl, HNO ₃ , H ₂ SO ₄ , H ₃ PO ₃ , H ₂ O ₂ , and C ₂ H ₂ O ₄ .

The thin film solar cell according to the present invention for achieving the above technical problem is a front electrode formed on a substrate; A first separator formed by removing a predetermined region of the front electrode; A semiconductor layer formed on the front electrode and the first separator; A transparent conductive layer formed on the semiconductor layer; A contact portion formed by removing a predetermined region of the semiconductor layer and the transparent conductive layer; A rear electrode formed in a predetermined pattern on the transparent conductive layer to have a separation region and electrically connected to the front electrode through the contact portion; And a second separation part formed by removing the transparent conductive layer in the separation area.

The thin film solar cell according to the present invention for achieving the above technical problem is a front electrode formed on a substrate; A first separator formed by removing a predetermined region of the front electrode; A semiconductor layer formed on the front electrode and the first separator; A transparent conductive layer formed on the semiconductor layer; A contact portion formed by removing a predetermined region of the semiconductor layer and the transparent conductive layer; A rear electrode formed in a predetermined pattern on the transparent conductive layer to have a separation region and electrically connected to the front electrode through the contact portion; And a second separator formed by removing the transparent conductive layer and the semiconductor layer in the isolation region.

The back electrode is formed on the transparent conductive layer except for the separation region and is spaced apart by a predetermined interval by the separation region.

The isolation region is formed on the transparent conductive layer on the front electrode so as to be adjacent to the contact portion.

As described above, the thin film solar cell and the method of manufacturing the same according to the present invention have the following effects.

First, since the second conductive part is formed by removing a predetermined area from the transparent conductive layer using the rear electrode as a mask, the separation distance between the contact part and the second separating part can be minimized, thereby increasing the efficiency of the solar cell by reducing the dead zone. The effect is that you can.

Second, since the second separation portion is formed through an etching process, the process for forming the second separation portion is simplified, and the number of laser scribing processes can be reduced, thereby reducing the cost of manufacturing a solar cell. It works.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a view for explaining a thin film solar cell according to a first embodiment of the present invention.

2, a thin film solar cell according to a first embodiment of the present invention includes a front electrode 200 formed on a substrate 100; A first separator 250 for separating the front electrode 200 at predetermined intervals; A semiconductor layer 300 formed on the front electrode 200 and the first separator 250; A transparent conductive layer 400 formed on the semiconductor layer 300; A contact portion 350 formed by removing predetermined regions of the semiconductor layer 300 and the transparent conductive layer 400; A rear electrode 500 electrically connected to the front electrode 200 through the contact unit 350; And a second separator 550 formed by removing a predetermined region of the rear electrode 500 and the transparent conductive layer 400 so as to be adjacent to the contact portion 350.

Substrate 100 may be glass, transparent plastic, or flexible plastic.

The front electrode 200 is formed on the entire surface of the substrate 100, and includes Ag, Al, Ag + Al, Ag + Mg, Ag + Mn, Ag + Sb, Ag + Zn, Ag + Mo, Ag + Ni, Ag It is formed using a metal material such as + Cu or Ag + Al + Zn, or ITO (Indium Tin Oxide), FTO (Fluorine doped Tin Oxide), ZnO, ZnO: B, ZnO: Al, Ag, SnO ₂ , SnO ₂ : F, ZnO: Ga ₂ O ₃ , ZnO: Al ₂ O ₃ , SnO ₂ : Sb ₂ O ₃ It may be made of a transparent conductive material (TCO, Transparent Conductive Oxide).

On the other hand, since the front electrode 200 is the surface where the sunlight is incident, it is important to allow the incident sunlight to be absorbed to the inside of the solar cell as much as possible, for this purpose, the front electrode 200 may be formed of an uneven structure. have. When the front electrode 200 is formed of an uneven structure, the ratio of incident sunlight to the outside of the solar cell is reduced, and the ratio of sunlight absorbed into the solar cell by scattering of incident sunlight is To increase, there is an effect that the efficiency of the solar cell is enhanced.

The first separator 250 is formed by removing a predetermined region of the front electrode 200 to separate the front electrode 200 so that the front electrode 200 is spaced at a predetermined interval.

The semiconductor layer 300 is formed on the entire surface of the substrate 100 to include the front electrode 200 and the first separator 250.

The semiconductor layer 300 may have a PIN structure in which a P-type semiconductor material, an I-type semiconductor material, and an N-type semiconductor material are sequentially stacked. When the semiconductor layer 300 is formed in the PIN structure as described above, the I-type semiconductor material is depleted by the P-type semiconductor material and the N-type semiconductor material to generate an electric field therein, and is generated by sunlight. The resulting holes and electrons are drift by the electric field and are collected in the P-type semiconductor material and the N-type semiconductor material, respectively. Meanwhile, when the semiconductor layer 300 is formed in a PIN structure, it is preferable to form a P-type semiconductor material on the front electrode 200 and then form an I-type semiconductor material and an N-type semiconductor material. The reason is that since the drift mobility of the holes is generally low due to the drift mobility of the electrons, the P-type semiconductor material is formed close to the light receiving surface in order to maximize the collection efficiency due to incident light.

The transparent conductive layer 400 is formed on the semiconductor layer 300 to have the same shape as the semiconductor layer 300. In this case, the transparent conductive layer 400 may be made of a transparent conductive material such as ZnO, ZnO: B, ZnO: Al, Ag. The transparent conductive layer 400 serves to increase the proportion of light reflected from the back electrode described later by scattering sunlight and proceeding at various angles to be reincident to the semiconductor layer 300.

The contact unit 350 is formed by removing predetermined regions of the semiconductor layer 300 and the transparent conductive layer 400 formed on the front electrode 200 to expose the predetermined region of the front electrode 200.

The rear electrode 500 is electrically connected to the front electrode 200 through the contact portion 350 and the remaining transparent conductive layer 400 except for the isolation region adjacent to the contact portion 350 where the second separation portion 550 is to be formed. It is formed in a pattern form on). At this time, the back electrode 500 may be made of a material such as Ag, Al, Ag + Mo, Ag + Ni, Ag + Cu.

The second separator 550 electrically separates the adjacent rear electrode 500 by removing the transparent conductive layer 400 in the separation region in which the rear electrode 500 is not formed on the transparent conductive layer 400. In this case, the second separator 550 is formed by an etching process of removing the transparent conductive layer 400 using the back electrode 500 as a mask.

As described above, the thin film solar cell according to the exemplary embodiment of the present invention uses the back electrode 500 as a mask so that the contact portion 350 is formed by removing the predetermined region from the transparent conductive layer 400. Since the separation distance between the second separation unit 550 can be minimized, the efficiency of the solar cell can be increased by reducing the dead zone.

In addition, according to the present invention, the process for forming the second separation unit 550 can be simplified, and the number of laser scribing processes can be reduced, thereby reducing the equipment cost for manufacturing the solar cell.

3 is a view for explaining a thin film solar cell according to a second embodiment of the present invention.

Referring to FIG. 3, a thin film solar cell according to a second embodiment of the present invention includes a front electrode 200 formed on a substrate 100; A first separator 250 for separating the front electrode 200 at predetermined intervals; A semiconductor layer 300 formed on the front electrode 200 and the first separator 250; A transparent conductive layer 400 formed on the semiconductor layer 300; A contact portion 350 formed by removing predetermined regions of the semiconductor layer 300 and the transparent conductive layer 400; A rear electrode 500 electrically connected to the front electrode 200 through the contact unit 350; And a second separator 550 formed by removing a predetermined region of the back electrode 500 and the transparent conductive layer 400 so as to be adjacent to the contact portion 350.

In the thin film solar cell according to the second exemplary embodiment of the present invention having the above configuration, the rest of the configuration except for the second separation unit 550 is the same as that of the first exemplary embodiment of the present invention. I will replace it with one explanation.

The second separator 550 is formed by removing the transparent conductive layer 400 and the semiconductor layer 300 in the separation region in which the back electrode 500 is not formed on the transparent conductive layer 400. The transparent conductive layer 400 and the semiconductor layer 300 are electrically separated. In this case, the second separator 550 is formed by an etching process of removing the transparent conductive layer 400 and the semiconductor layer 300 using the back electrode 500 as a mask.

As described above, the thin film solar cell according to the second embodiment of the present invention may provide the same effects as the first embodiment of the present invention described above.

4A to 4F are diagrams for explaining a manufacturing process of a thin film solar cell according to an exemplary embodiment of the present invention step by step.

First, as shown in FIG. 4A, the front electrode material 200a is formed on the substrate 100.

As the substrate 100, glass, transparent plastic, or flexible plastic may be used.

The front electrode material 200a may be formed by a metal organic chemical vapor deposition (MOCVD) process, a plasma-enhanced chemical vapor deposition (PECVD) process, a sputtering process, an e-beam process, or a thermal process. Can be formed. In this case, the front electrode material 200a may be formed of Ag, Al, Ag + Al, Ag + Mg, Ag + Mn, Ag + Sb, Ag + Zn, Ag + Mo, Ag + Ni, Ag + Cu, or Ag + Al +. It is formed using a metal material such as Zn, ITO (Indium Tin Oxide), FTO (Fluorine doped Tin Oxide), ZnO, ZnO: B, ZnO: Al, Ag, SnO ₂ , SnO ₂ : F, ZnO: Ga ₂ O ₃ , ZnO: Al ₂ O ₃ , SnO ₂ : Sb ₂ O ₃ It may be formed using a transparent conductive material (TCO, Transparent Conductive Oxide).

Since the front electrode material 200a is a surface on which solar light is incident, it is important to allow the incident solar light to be absorbed to the inside of the solar cell as much as possible. For this purpose, the front electrode material 200a may be textured. The process can be carried out further.

The texturing process is a process of forming the surface of the front electrode material 200a into an uneven structure and processing it into a shape similar to the surface of a fabric. Anisotropic etching may be performed through a groove forming process using mechanical processing, or physical processing. When such a texture processing process is performed on the front electrode material 200a, the ratio of incident solar light to the outside of the solar cell is reduced, and sunlight is emitted into the solar cell by scattering of incident sunlight. The rate of absorption is increased, thereby increasing the efficiency of the solar cell.

On the other hand, in the texture processing step, it is possible to form a bumpy concave-convex structure on the surface of the substrate 100 using the above-described groove forming step. Thus, due to the uneven structure formed on the surface of the substrate 100, the surface of the front electrode material 200a has the same uneven structure as the uneven structure formed on the surface of the substrate 100.

Next, as shown in FIG. 4B, a plurality of front electrodes spaced apart with a first separator 250 therebetween by removing a predetermined region of the front electrode material 200a through a laser scribing process. 200).

Next, as shown in FIG. 4C, the semiconductor material 300a and the transparent conductive material 400a are sequentially formed on the entire surface of the substrate 100.

The semiconductor material 300a may be formed of a silicon-based semiconductor material using a CVD process or the like.

The semiconductor material 300a may have a PIN structure in which a P-type semiconductor material, an I-type semiconductor material, and an N-type semiconductor material are sequentially stacked. When the semiconductor material 300a is formed in the PIN structure as described above, the I-type semiconductor material is depleted by the P-type semiconductor material and the N-type semiconductor material to generate an electric field therein, and is generated by sunlight. The resulting holes and electrons are drift by the electric field and are collected in the P-type semiconductor material and the N-type semiconductor material, respectively. Meanwhile, when the semiconductor material 300a is formed in a PIN structure, it is preferable to form a P-type semiconductor material on the front electrode 200 and then form an I-type semiconductor material and an N-type semiconductor material. The reason is that since the drift mobility of the holes is generally low due to the drift mobility of the holes, the P-type semiconductor material is formed close to the light receiving surface in order to maximize the collection efficiency by incident light.

The transparent conductive material 400a may be formed by sputtering or metal organic chemical vapor deposition (MOCVD) using a transparent conductive material such as ZnO, ZnO: B, ZnO: Al, or Ag. The transparent conductive material 400a scatters sunlight and proceeds at various angles, thereby increasing the proportion of light reflected from the rear electrode, which will be described later, and reincident into the semiconductor material 300a.

Next, as shown in FIG. 4D, the semiconductor layer 300 spaced apart from the contact portion 350 by removing a predetermined region of the semiconductor material 300a and the transparent conductive material 400a through a laser scribing process. And a transparent conductive layer 400.

Next, as can be seen in FIG. 4E, the front electrode 100 is electrically connected to the front electrode 100 through the contact portion 350 and spaced apart by a separation region on the transparent conductive layer 400 as close as possible to the contact portion 350. A back electrode 500 having a pattern shape is formed on the transparent conductive layer 400. The patterned back electrode 500 may include screen printing, inkjet printing, and gravure printing using a metal paste such as Ag, Al, Ag + Mo, Ag + Ni, Ag + Cu, or the like. (gravure printing), gravure offset printing (gravure offset printing), reverse offset printing (reverse offset printing, flexo printing, or microcontact printing) or the like (printing process).

Meanwhile, in the process of forming the back electrode 500, the separation region 510 is preset on the transparent conductive layer 400 to be as close to the contact portion 350 as possible according to the process margin of the printing process, and the set separation region 510 is set. Except for forming the rear electrode 500 on the transparent conductive layer (400).

Next, as shown in FIG. 4F, the second conductive part 550 is formed by removing the transparent conductive layer 400 exposed by the isolation region 510 through an etching process using the back electrode 500 as a mask. The adjacent back electrode 500 is electrically separated by the second separator 550, thereby completing a desired thin film solar cell.

As an etching process, a dry etching process or a wet etching process may be used.

In the dry etching process, the second conductive portion 550 is formed by removing the transparent conductive layer 400 exposed by the separation region 510 using an etching gas. In this case, the etching gas may be Ar or Cl ₂ , but is not limited thereto. The etching gas may be a gas or a mixed gas capable of removing the material of the transparent conductive layer 400.

In the wet etching process, the substrate 100 is immersed in an etching bath (not shown) in which an etching solution (not shown) is removed to remove the transparent conductive layer 400 or the etching solution is deposited on the substrate 100 transferred through a nozzle (not shown). Spraying may remove the transparent conductive layer 400. In this case, the etchant may include at least one etching material among alkaline solutions such as NaOH, KOH, HCl, HNO ₃ , H ₂ SO ₄ , H ₃ PO ₃ , H ₂ O ₂ , and C ₂ H ₂ O ₄ . have. For example, when NaOH is used as an etchant, NaOH quickly removes the transparent conductive layer 400 made of ZnO ₂ material in the form of Zn ₂ SiO ₃ within a few seconds to form a second separator 550.

Meanwhile, in the process of forming the second separator 550, the process conditions such as the etching temperature and the etching time of the etching process may be changed, and as illustrated in FIG. 3, the transparent conductive layer corresponding to the separation region 510 ( The thin film type solar cell according to the second embodiment of the present invention may be completed by forming the second separator 550 by simultaneously removing the 400 and the semiconductor layer 300.

On the other hand, when the second conductive portion 550 is formed by removing the transparent conductive layer 400 and the semiconductor layer 300 in the separation region 510 through a wet etching process, the temperature of the etching solution is maintained at 20 to 200 ° C. It is preferable to, and more preferably to maintain the temperature of the etching solution at 50 ~ 100 ℃. If the temperature of the etchant is kept below 20 ℃, etching may not be performed smoothly, and the etching process may take a long time. If the temperature of the etchant exceeds 200 ℃, the etching may proceed rapidly to control the etching process. This becomes difficult, and thus problems of over-etching may occur.

In addition, the etching time is preferably maintained for 30 seconds to 10 minutes, more preferably for 2 minutes to 5 minutes. If the etching time is less than 30 seconds, the desired etching may not be performed.

As described above, in the method of manufacturing the thin film solar cell according to the embodiment of the present invention, the back electrode 500 is formed in a pattern through a printing process, and the transparent conductive layer 400 is formed using the patterned back electrode 500 as a mask. Since the second separation portion 550 is formed to remove the gap, the separation distance between the contact portion 350 and the second separation portion 550 can be minimized, thereby increasing the efficiency of the solar cell through the reduction of the dead zone. have.

In addition, according to the present invention, the process for forming the second separation unit 550 can be simplified, and the number of laser scribing processes can be reduced, thereby reducing the equipment cost for manufacturing the solar cell.

Those skilled in the art to which the present invention pertains will understand that the present invention can be implemented in other specific forms without changing the technical spirit or essential features. Therefore, it is to be understood that the embodiments described above are exemplary in all respects and not restrictive. The scope of the present invention is shown by the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be construed as being included in the scope of the present invention. do.

1A to 1F are diagrams for explaining a manufacturing process of a conventional thin film solar cell step by step.

2 is a view for explaining a thin film solar cell according to a first embodiment of the present invention.

3 is a view for explaining a thin film solar cell according to a second embodiment of the present invention.

4A to 4F are diagrams for explaining a manufacturing process of a thin film solar cell according to an exemplary embodiment of the present invention step by step.

<Explanation of Signs of Major Parts of Drawings>

100: substrate 200: front electrode

250: first separator 300: semiconductor layer

400: transparent conductive layer 450: contact portion

500: rear electrode 510: separation region

550: second separator

Claims (12)

Forming a front electrode formed on the substrate; Removing a predetermined region of the front electrode to form a first separator; Forming a semiconductor layer on the front electrode and the first separator; Forming a transparent conductive layer on the semiconductor layer; Forming a contact portion by removing predetermined regions of the semiconductor layer and the transparent conductive layer; Forming a back electrode having a predetermined pattern electrically connected to the front electrode through the contact portion and having a separation region on the transparent conductive layer; And And removing the transparent conductive layer in the separation region using the back electrode as a mask to form a second separation portion. Forming a front electrode formed on the substrate; Removing a predetermined region of the front electrode to form a first separator; Forming a semiconductor layer on the front electrode and the first separator; Forming a transparent conductive layer on the semiconductor layer; Forming a contact portion by removing predetermined regions of the semiconductor layer and the transparent conductive layer; Forming a back electrode having a predetermined pattern electrically connected to the front electrode through the contact portion and having a separation region on the transparent conductive layer; And And removing the transparent conductive layer and the semiconductor layer in the separation region using the back electrode as a mask to form a second separation portion. The method according to claim 1 or 2, The back electrode of the predetermined pattern is formed on the remaining transparent conductive layer except for the separation region is a thin film solar cell manufacturing method characterized in that formed to be spaced apart by a predetermined interval by the separation region. The method according to claim 1 or 2, And the separation region is formed on the transparent conductive layer on the front electrode so as to be adjacent to the contact portion. The method according to claim 1 or 2, The back electrode may include screen printing, inkjet printing, gravure printing, gravure offset printing, reverse offset printing, flexo printing, Or forming a predetermined pattern by microcontact printing. The method according to claim 1 or 2, The process of forming the second separator is a method of manufacturing a thin film solar cell, characterized in that made through a dry etching process. The method according to claim 1 or 2, The process of forming the second separation unit is a method of manufacturing a thin-film solar cell, characterized in that through a wet etching process using an etching solution. The method of claim 7, wherein The etchant comprises _{at least} one of the etching material of NaOH, KOH, HCl, HNO ₃ , H ₂ SO ₄ , H ₃ PO ₃ , H ₂ O ₂ , and C ₂ H ₂ O ₄ Thin-film sun characterized in that Method for producing a battery. A front electrode formed on the substrate; A first separator formed by removing a predetermined region of the front electrode; A semiconductor layer formed on the front electrode and the first separator; A transparent conductive layer formed on the semiconductor layer; A contact portion formed by removing a predetermined region of the semiconductor layer and the transparent conductive layer; A rear electrode formed in a predetermined pattern on the transparent conductive layer to have a separation region and electrically connected to the front electrode through the contact portion; And And a second separator formed by removing the transparent conductive layer in the separation region. A front electrode formed on the substrate; A first separator formed by removing a predetermined region of the front electrode; A semiconductor layer formed on the front electrode and the first separator; A transparent conductive layer formed on the semiconductor layer; A contact portion formed by removing a predetermined region of the semiconductor layer and the transparent conductive layer; A rear electrode formed in a predetermined pattern on the transparent conductive layer to have a separation region and electrically connected to the front electrode through the contact portion; And And a second separator formed by removing the transparent conductive layer and the semiconductor layer in the separation region. 11. The method according to claim 9 or 10, The back electrode is formed on the transparent conductive layer except for the separation region, the thin film type solar cell, characterized in that spaced apart by a predetermined interval by the separation region. 11. The method according to claim 9 or 10, The separation region is formed on the transparent conductive layer on the front electrode so as to be adjacent to the contact portion thin film type solar cell.

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