KR20100130695A - Method for forming carbon pattern using oxygen plasma - Google Patents
Method for forming carbon pattern using oxygen plasma Download PDFInfo
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- KR20100130695A KR20100130695A KR1020090049347A KR20090049347A KR20100130695A KR 20100130695 A KR20100130695 A KR 20100130695A KR 1020090049347 A KR1020090049347 A KR 1020090049347A KR 20090049347 A KR20090049347 A KR 20090049347A KR 20100130695 A KR20100130695 A KR 20100130695A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims abstract description 58
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 47
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 14
- 239000001301 oxygen Substances 0.000 title claims abstract description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 230000008569 process Effects 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000002238 carbon nanotube film Substances 0.000 claims description 15
- 229910021389 graphene Inorganic materials 0.000 claims description 9
- 229920003023 plastic Polymers 0.000 claims description 3
- 238000000059 patterning Methods 0.000 abstract description 4
- 229920000642 polymer Polymers 0.000 abstract description 4
- 210000002381 plasma Anatomy 0.000 description 38
- 239000010408 film Substances 0.000 description 29
- 239000002041 carbon nanotube Substances 0.000 description 19
- 229910021393 carbon nanotube Inorganic materials 0.000 description 19
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 239000002109 single walled nanotube Substances 0.000 description 6
- 239000012153 distilled water Substances 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000001548 drop coating Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002048 multi walled nanotube Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Provided is a method of forming a carbon pattern using an oxygen plasma. The method of forming a carbon pattern may include forming a carbon film on a substrate, forming a mask pattern on the carbon film, and etching the carbon film using the mask pattern as an etch mask and using oxygen radicals as an etchant. Can be. In this case, since etching is performed by oxygen radicals having a relatively low energy, it can be effectively used for flexible substrates made of flexible materials such as polymers, and by patterning a carbon film through a capacitively coupled plasma process, large-area uniform patterning and high Resolution and reproducibility can be achieved.
Description
The present invention relates to a carbon pattern forming method, and more particularly to a carbon pattern forming method using an oxygen plasma.
Carbon naanotubes and graphene are one of the nano materials that are attracting the most attention recently because they have excellent electrical, mechanical, thermal, and optical properties, and have potential applications in many fields. Due to the above characteristics, carbon nanotubes and griffin have infinite application potential in electroluminescent display (FED), bio / chemical sensor, transistor, energy storage, optoelectronic device and the like. However, in order to apply such various applications, the production of a pattern including carbon nanotubes or graphene should be preceded, and various pattern formation methods have been developed for this purpose.
However, these conventional techniques have been pointed out as a limitation not only of a complicated manufacturing process but also of low resolution and reproducibility. Especially, when the substrate used is a flexible substrate made of a material such as a polymer, damage to the surface of the substrate during pattern formation is difficult. There is a problem that occurs.
Therefore, in order to successfully achieve the various applications of the above-described carbon nanotubes and graphene, the development of a carbon pattern forming method that can be implemented reproducibly with high resolution at an accurate position and effectively applied to various substrates. I would say this is necessary.
The technical problem to be solved by the present invention is to provide a carbon pattern forming method that can be effectively applied to a variety of substrates including a high resolution and excellent reproducibility.
In order to achieve the above technical problem, the present invention provides a carbon pattern forming method. The method may include forming a carbon film on a substrate, forming a mask pattern on the carbon film, and etching the carbon film using the mask pattern as an etch mask and using oxygen radicals as an etchant. .
The etching of the carbon film may be performed through a capacitively coupled plasma process, and the capacitively coupled plasma process may be performed at a chamber pressure of 50m to 150mTorr and a plasma power of 100 to 500W.
In addition, after performing the etching of the carbon film, the method may further include removing a mask material on the patterned carbon film and heat treating the substrate from which the mask material is removed.
In the present invention, the carbon film may be a carbon nanotube film or a graphene film, the substrate may be a plastic substrate.
As described above, according to the present invention, since the etching is performed by oxygen radicals having a relatively lower energy than the inductively coupled plasma process, damage to the surface of the substrate can be minimized, and thus a flexible substrate made of a flexible material such as a polymer Can be used effectively. In addition, by etching the carbon film including carbon nanotubes or graphene through a capacitively coupled plasma process, it is possible to realize uniform patterning of a large area and high resolution and reproducibility.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. Like numbers refer to like elements throughout.
1A to 1E are schematic views showing each step of the carbon pattern forming method according to the embodiment of the present invention.
Referring to FIG. 1A, a carbon film 12 is formed on a substrate 10. The substrate 10 may be a variety of substrates, including a flexible plastic substrate and a substrate made of an organic, inorganic or organic-inorganic hybrid material. The carbon film 12 may be a carbon nanotube film or a graphene film. Carbon nanotubes used in the present invention are not particularly limited and include single-walled or multi-walled carbon nanotubes commonly used in the art. The carbon nanotube film may be formed by spin coating, dip coating, drop coating, spray coating or bar coating. In addition, the carbon nanotube film may be formed by vacuum-filtering the ultrasonically treated carbon nanotube dispersion solution using an anodized aluminum (AAO) film and then heating and heat-treating the carbon nanotubes filtered in a thin film form on the substrate 10. It may be. The graphene film may be formed by a method such as a sticky tape method, a graphene oxide suspension method, an ultrasonic decomposition method, a chemical vapor deposition method, or the like. The carbon film 12 may have a thickness of 50 to 200 nm, which may be appropriately adjusted to a thickness according to the applied device.
Referring to FIG. 1B, a mask layer 14 is formed on the carbon film 12. The mask layer 14 may be formed by a method such as spin coating, dip coating, drop coating, spray coating, or bar coating. . The mask layer 14 may be any one of various material layers that can be used as a mask in an etching process of the carbon film 12 disposed below the mask layer 14. For example, the mask layer 14 may be a photoresist layer.
Referring to FIG. 1C, the mask layer 14 is partially etched to form a mask pattern 14 ′. The mask pattern 14 ′ may be formed using, for example, a photolithography method.
Referring to FIG. 1D, the carbon pattern 12 ′ is formed by etching the carbon film 12 using the mask pattern 14 ′ as an etch mask and oxygen radicals as an etchant. The carbon layer 12 may be etched through a capacitively-coupled plasma (CCP) process. The capacitively coupled plasma method generates a plasma using an electric field without using a magnetic field, and may generate various types of plasmas according to an RF (radio frequency) application method. In addition, there is no direct contact between the electrode and the plasma, which improves the purity of the plasma, and in particular, generates a plasma having a uniform density over a wide range, which is advantageous for patterning of a larger area than an inductively-coupled plasma (ICP) method. And it has the advantage of being suitable for mass production with excellent fairness. In particular, in the case of the remote plasma type of the capacitively coupled plasma method, the active ion does not have an ion density enough to etch the carbon film, and there is no directivity of the etching, so the radical does not affect the etching. This will act as the main etchant. Therefore, unlike the inductively coupled plasma method, damage of a flexible substrate such as a plastic substrate can be prevented by excluding the influence of high density active ions.
For example, the carbon film 12 may be etched using a capacitively coupled remote plasma as a plasma generation method, oxygen gas as a gas type, a chamber pressure of 50 mTorr or more, and a plasma power of 100 W or more. The chamber pressure and the plasma power correspond to a lower limit capable of generating a plasma to perform an effective etching operation. In this case, the upper limit of the chamber pressure does not need to be particularly limited, but is preferably set to 150 mTorr or less in order to prevent the impurity content other than oxygen from increasing. In the case of the plasma power, the higher the value is advantageous to the plasma generation and etching speed improvement and higher power can be applied according to the improved equipment performance, but preferably can be performed at a power of 500W or less. The process time may be appropriately selected according to the thickness of the carbon film 12 to be etched. Specifically, the process time may be increased or decreased according to the increase or decrease of the thickness of the carbon film 12 within a process time of 1 to 10 minutes.
Referring to FIG. 1E, a mask material positioned on the patterned carbon film 12 ′ is removed and then heat-treated. Removal of the mask material may be performed through dry or wet etching.
Hereinafter, preferred examples are provided to aid the understanding of the present invention. However, the following experimental examples are only for helping understanding of the present invention, and the present invention is not limited to the following experimental examples.
Experimental Example 1: Formation of Carbon Nanotube Film on Substrate
Single-walled carbon or tube powder was mixed in distilled water added with surfactant SDS (sodium dodecyl sulfate) at a concentration of 0.3 mg / ml, sonicated for 1 hour, dispersed, and centrifuged at 14,000 rpm for 10 minutes. The purified supernatant by centrifugation was diluted 50 times in distilled water, and then vacuum filtered using an anodized aluminum membrane having pores of 0.2 탆 diameter. The carbon nanotubes filtered in the form of a thin film were removed from the anodized aluminum film of the lower layer with 3M NaOH solution and treated with distilled water to adjust the pH to 6-8. Next, the carbon nanotube thin film treated by the above method was placed on a PET substrate, and then dried at a temperature of 40 ° C. to 80 ° C. for at least 30 minutes.
2 is an SEM image of a carbon nanotube film formed on a substrate according to Experimental Example 1. FIG. Referring to Figure 2, it can be seen that the carbon nanotube network is formed on the substrate.
Experimental Example 2: Formation of Carbon Nanotube Pattern
The photoresist material was spin coated on the carbon nanotube film prepared in Experimental Example 1 at 1,500 rpm for 1 minute to form a photoresist layer. Next, the photoresist layer was exposed to UV (about 365 nm) using a photomask designed in various patterns, and then developed to form a photoresist pattern.
The substrate on which the photoresist pattern was formed was placed between radiofrequency parallel plate electrodes of the capacitively coupled plasma apparatus, and plasma-treated under an oxygen atmosphere. At this time, the frequency was 13.56 MHz, the chamber pressure was 70 mTorr, the plasma power was 500 W, and plasma treatment was performed for 5 minutes to form a carbon nanotube pattern.
After forming the carbon nanotube pattern, the photoresist material remaining on the patterned carbon nanotube layer was removed by treatment in ethanol or TMF solution for 30 minutes or more. Next, after washing three times or more with distilled water, it was dried for 30 minutes or more in an oven of 40 ~ 80 ℃.
3A to 3C are optical images of carbon nanotube patterns formed according to Experimental Example 2. FIG. Referring to FIGS. 3A to 3C, it can be seen that various patterns are formed with high resolution according to the design of the photomask used in the photolithography process.
Experimental Example 3: Measurement of Sheet Resistance of Carbon Nanotube Films According to Plasma Power and Processing Time
After the single-walled carbon nanotube film was formed on the PET substrate, the carbon nanotube film was etched by oxygen plasma using a capacitively coupled plasma apparatus. At this time, the plasma power was changed from 200W to 500W, the process time was changed from 1 minute to 5 minutes, and the sheet resistance of the carbon nanotube film was measured accordingly.
4 is a graph of the sheet resistance according to the plasma power and the process time change of the single-walled carbon nanotube film measured according to Experimental Example 3. Referring to FIG. 4, it can be seen that as the plasma power is increased and the process time is increased, the etching of the carbon nanotube film occurs more, thereby increasing the sheet resistance.
Experimental Example 4: Measurement of Sheet Resistance and Transparency of Carbon Nanotube Films by Plasma Processing Time
Except that the plasma power was fixed to 400W, the sheet resistance and the transparency of the carbon nanotube film were measured by the same method as described in Experimental Example 3.
FIG. 5 is a graph of sheet resistance and transparency with plasma processing time of a single-walled carbon nanotube film measured according to Experimental Example 4. FIG. Referring to FIG. 5, it can be seen that the longer the plasma processing time, the more the etching of the carbon nanotubes occurs, thereby increasing the sheet resistance and transparency.
As described above, according to the present invention, the carbon nanotube layer may be etched through a capacitively coupled plasma process to form a carbon nanotube pattern having a high resolution and reproducibility, and also inductively coupled plasma during the etching process. Since oxygen radicals having a relatively lower energy than the process are used, damage to the surface of the flexible substrate made of a flexible material such as a polymer can be minimized.
In the above, the present invention has been described in detail with reference to preferred embodiments, but the present invention is not limited to the above embodiments, and various modifications and changes by those skilled in the art within the spirit and scope of the present invention. You can change it.
1A to 1E are schematic views showing each step of the carbon pattern forming method according to the embodiment of the present invention.
2 is an SEM image of a carbon nanotube film formed on a substrate according to Experimental Example 1. FIG.
3A to 3C are optical images of carbon nanotube patterns formed according to Experimental Example 2. FIG.
4 is a graph of the sheet resistance of the single-walled carbon nanotube film measured according to Experimental Example 3 with plasma power and process time change.
FIG. 5 is a graph of sheet resistance and transparency with respect to plasma process time of a single-walled carbon nanotube film measured according to Experimental Example 4. FIG.
Claims (6)
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020090049347A KR20100130695A (en) | 2009-06-04 | 2009-06-04 | Method for forming carbon pattern using oxygen plasma |
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| KR1020090049347A KR20100130695A (en) | 2009-06-04 | 2009-06-04 | Method for forming carbon pattern using oxygen plasma |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102530854A (en) * | 2012-01-17 | 2012-07-04 | 上海交通大学 | Method for preparing semiconductor single-walled carbon nanotube by adopting a room-temperature plasma etching method |
| KR101218580B1 (en) * | 2011-05-13 | 2013-01-21 | 한국화학연구원 | Method and apparatus for forming graphene pattern by using peeling technique |
| WO2013015559A2 (en) * | 2011-07-22 | 2013-01-31 | 성균관대학교산학협력단 | Method for etching atomic layer of graphine |
| CN103889158A (en) * | 2014-03-17 | 2014-06-25 | 深圳市宇顺电子股份有限公司 | Method for preparing graphene fine wires |
| CN104945015A (en) * | 2014-03-26 | 2015-09-30 | 苏州汉纳材料科技有限公司 | Carbon nano tube transparent conducting thin film patterning method |
| CN112047327A (en) * | 2020-08-21 | 2020-12-08 | 山西大学 | Preparation method of three-dimensional vertical graphene |
| CN117059483A (en) * | 2023-10-12 | 2023-11-14 | 深圳基本半导体有限公司 | Method for removing and detecting carbon protective film on surface of silicon carbide device |
-
2009
- 2009-06-04 KR KR1020090049347A patent/KR20100130695A/en not_active Application Discontinuation
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101218580B1 (en) * | 2011-05-13 | 2013-01-21 | 한국화학연구원 | Method and apparatus for forming graphene pattern by using peeling technique |
| WO2012157894A3 (en) * | 2011-05-13 | 2013-01-24 | 한국화학연구원 | Method and apparatus for forming a graphene pattern using a delamination technique |
| WO2013015559A2 (en) * | 2011-07-22 | 2013-01-31 | 성균관대학교산학협력단 | Method for etching atomic layer of graphine |
| WO2013015559A3 (en) * | 2011-07-22 | 2013-03-21 | 성균관대학교산학협력단 | Method for etching atomic layer of graphine |
| US9245752B2 (en) | 2011-07-22 | 2016-01-26 | Research & Business Foundation Sungkyunkwan University | Method for etching atomic layer of graphene |
| CN102530854A (en) * | 2012-01-17 | 2012-07-04 | 上海交通大学 | Method for preparing semiconductor single-walled carbon nanotube by adopting a room-temperature plasma etching method |
| CN103889158A (en) * | 2014-03-17 | 2014-06-25 | 深圳市宇顺电子股份有限公司 | Method for preparing graphene fine wires |
| CN104945015A (en) * | 2014-03-26 | 2015-09-30 | 苏州汉纳材料科技有限公司 | Carbon nano tube transparent conducting thin film patterning method |
| CN112047327A (en) * | 2020-08-21 | 2020-12-08 | 山西大学 | Preparation method of three-dimensional vertical graphene |
| CN117059483A (en) * | 2023-10-12 | 2023-11-14 | 深圳基本半导体有限公司 | Method for removing and detecting carbon protective film on surface of silicon carbide device |
| CN117059483B (en) * | 2023-10-12 | 2024-01-30 | 深圳基本半导体有限公司 | Method for removing and detecting carbon protective film on surface of silicon carbide device |
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| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |